CN202565502U

CN202565502U - Microwave oven

Info

Publication number: CN202565502U
Application number: CN2012202380815U
Authority: CN
Inventors: 梁伟国
Original assignee: Individual
Current assignee: Individual
Priority date: 2012-04-24
Filing date: 2012-05-25
Publication date: 2012-11-28
Anticipated expiration: 2022-05-25
Also published as: CN202565499U; CN202587451U; CN202634742U; CN103200722A; CN202565498U; CN202565503U; CN202738163U; CN202634743U; CN202564031U

Abstract

The utility model relates to a microwave oven. The microwave oven comprises a magnetron and a high-voltage transformer, wherein the high-voltage transformer comprises a framework, a filament winding and a primary winding, the filament winding and a cathode of the magnetron are connected to form a heating loop, an anode of the magnetron is grounded, two half-wave voltage-doubling circuits which are in out-phase operation are connected between the anode of the magnetron and the heating loop, the two half-wave voltage-doubling circuits are a first half-wave voltage-doubling circuit and a second half-wave voltage-doubling circuit respectively, the first half-wave voltage-doubling circuit is connected with the heating loop through a third high-voltage diode, and the second half-wave voltage-doubling circuit is connected with the anode of the magnetron through a fourth high-voltage diode. Accordingly, the microwave oven has a reasonable design, two secondary windings are used for forming two half-wave voltage-doubling circuits which are in out-phase operation as much as possible, then the positive half-wave output power of the high-voltage transformer is equal to the negative half-wave output power of the high-voltage transformer roughly, the temperature rise of the high-voltage transformer is reduced, the efficiency is improved, and the microwave oven includes a power frequency microwave oven and a frequency-conversion microwave oven.

Description

A kind of microwave oven

Technical field

The utility model relates to a kind of microwave oven.

Background technology

Existing microwave oven generally comprises high-tension transformer, high-voltage capacitance, high-voltage diode and magnetron; High-tension transformer comprises elementary winding, secondary winding, Filament Winding and transformer framework four parts again; Voltage about the secondary output 2000VAC of high-tension transformer; Secondary winding, high-voltage capacitance and high-voltage diode are formed the half-wave voltage-multiplying circuit and are come the work of driven magnetic keyholed back plate, because high-tension transformer has half-wave to charge to electric capacity in the course of the work, have half-wave to carry out voltage and superpose the driven magnetic keyholed back plate; Therefore the power of high-tension transformer is unequal in one-period, causes the high-tension transformer serious inefficiency of generating heat.

Summary of the invention

Therefore, the purpose of the utility model is to provide a kind of new power output microwave oven efficiently.

Above-mentioned purpose adopts following technical proposals to realize.

A kind of microwave oven; Comprise magnetron and high-tension transformer, high-tension transformer comprises skeleton, Filament Winding and elementary winding again, and Filament Winding and magnetron cathode connect to form heating circuit; Anode of magnetron ground connection; Be connected with the half-wave voltage-multiplying circuit of two out-phase work between said anode of magnetron and the heating circuit, be respectively the first half-wave voltage-multiplying circuit and the second half-wave voltage-multiplying circuit, the first half-wave voltage-multiplying circuit is connected with heating circuit through the 3rd high-voltage diode; The first high-voltage diode input in the 3rd high-voltage diode output termination first half-wave voltage-multiplying circuit, the first high-voltage diode output is connected with anode of magnetron; The second half-wave voltage-multiplying circuit is connected with anode of magnetron through the 4th high-voltage diode, and the 4th high-voltage diode input is connected with the second high-voltage diode output in the second half-wave voltage-multiplying circuit, and the second high-voltage diode input is connected with heating circuit.

Technique scheme can be done further perfect as follows.

The said first half-wave voltage-multiplying circuit is composed in series by the first secondary winding in-phase end, first high-voltage capacitance, first high-voltage diode and the first secondary winding end of oppisite phase in proper order, and the second half-wave voltage-multiplying circuit is composed in series by second subprime winding end of oppisite phase, second high-voltage capacitance, second high-voltage diode and second subprime winding in-phase end in proper order.

The said first half-wave voltage-multiplying circuit is composed in series by the first secondary winding in-phase end, first high-voltage diode, first high-voltage capacitance and the first secondary winding end of oppisite phase in proper order, and the second half-wave voltage-multiplying circuit is composed in series by second subprime winding end of oppisite phase, second high-voltage diode, second high-voltage capacitance and second subprime winding in-phase end in proper order.

The said first half-wave voltage-multiplying circuit is composed in series by the first secondary winding in-phase end, first high-voltage diode, first high-voltage capacitance and the first secondary winding end of oppisite phase in proper order, and the second half-wave voltage-multiplying circuit is composed in series by second subprime winding end of oppisite phase, second high-voltage capacitance, second high-voltage diode and second subprime winding in-phase end in proper order.

Be provided with the device of antisurge between the said heating circuit and the second half-wave voltage-multiplying circuit.

Be provided with the device of antisurge between said first half-wave voltage-multiplying circuit and the anode of magnetron.

The utility model is reasonable in design; Can utilize two secondary winding to form two out-phase work half-wave voltage-multiplying circuits as far as possible; Make high-tension transformer positive and negative half-wave power output about equally; Thereby reduce the temperature rise of high-tension transformer, raise the efficiency, and the said microwave oven of this patent had both comprised that the power frequency microwave oven also comprised the variable frequency microwave stove.

Description of drawings

Fig. 1 is the micro-wave oven high-voltage part schematic diagram of embodiment 1.

Fig. 2 is the micro-wave oven high-voltage part schematic diagram of embodiment 2.

Fig. 3 is the micro-wave oven high-voltage part schematic diagram of embodiment 3.

Fig. 4 is the micro-wave oven high-voltage part schematic diagram of embodiment 4.

Fig. 5 is the micro-wave oven high-voltage part schematic diagram of embodiment 5.

Fig. 6 is the micro-wave oven high-voltage part schematic diagram of embodiment 6.

Embodiment

Below in conjunction with accompanying drawing and embodiment the utility model is done further to detail.

Embodiment 1, in conjunction with Fig. 1, and a kind of microwave oven; Comprise high-tension transformer 1 and magnetron 7; High-tension transformer 1 comprises skeleton 2, elementary winding 3, first secondary winding 4, second subprime winding 5 and Filament Winding 6 again, and Filament Winding 6 is formed heating circuit, anode of magnetron ground connection with magnetron 7 negative electrodes.The end of oppisite phase of first secondary winding, 4 in-phase output ends and first high-voltage fuse 14, first high-voltage capacitance 15, first high-voltage diode 16, first secondary winding 4 is connected in proper order and is constituted the first half-wave voltage-multiplying circuit; Wherein first high-voltage diode, 16 inputs are connected with the output of the 3rd high-voltage diode 17; The input of the 3rd high-voltage diode 17 is connected with heating circuit; First high-voltage diode, 16 outputs are connected with anode of magnetron; The end of oppisite phase synthetism frame 2 of first secondary winding 4, ground connection when skeleton is installed, anode of magnetron ground connection; The in-phase end of second subprime winding 5 inverse output terminals and second high-voltage fuse 9, second high-voltage capacitance 10, second high-voltage diode 11 and second subprime winding 5 is connected in proper order and is constituted the second half-wave voltage-multiplying circuit; Wherein the output of second high-voltage diode 11 is connected with the input of the 4th high-voltage diode 12; The output of the 4th high-voltage diode 12 is connected with magnetron 7 anodes, and the input of second high-voltage diode 11 is connected with heating circuit.In two half-wave voltage-multiplying circuits; One of them secondary winding is to the high-voltage capacitor charging in this half-wave voltage-multiplying circuit in the same time; The another one secondary winding high-voltage capacitance voltage that just superposes carries out multiplication of voltage and comes to magnetron 7 power supply; This patent claims that the half-wave voltage-multiplying circuit of this situation is an out-phase work voltage-multiplying circuit; So all export same power at each half-wave mesohigh transformer 1, the function of the surge when the 4th high-voltage diode 12 and the 3rd high-voltage diode 17 block magnetron 7 and start except stoping two secondary winding are interconnected, also having.

Embodiment 2, and in conjunction with Fig. 2, embodiment 2 is that with the difference of embodiment 1 the 4th high-voltage diode 12 is composed in series by high-voltage diode 18,19, and same situation can appear on other the high-voltage diode or high-voltage capacitance, no longer repeats at this.

Embodiment 3; In conjunction with Fig. 3; The difference of embodiment 3 and embodiment 1 is between the second half-wave voltage-multiplying circuit and heating circuit, to increase high-voltage diode 21, and the output of high-voltage diode 21 is connected with the input of second high-voltage diode 11, and the input of high-voltage diode 21 is connected with heating circuit.

Embodiment 4, and in conjunction with Fig. 4, embodiment 4 and the difference of embodiment 1 temperature insurance device 20 that is in elementary winding 3, to connect replaces first high-voltage fuse 14 and second high-voltage fuse 9, and elementary winding 3 is the windings with three power inputs.

Embodiment 5; In conjunction with Fig. 5; Embodiment 5 is that with the difference of embodiment 1 first high-voltage capacitance 15 in the first half-wave voltage-multiplying circuit is located at the end of oppisite phase of first secondary winding 4; First high-voltage capacitance, 15 1 ends connect the end of oppisite phase of first secondary winding 4, other end ground connection, and the end of oppisite phase of first secondary winding 4 is not connected with skeleton.Second high-voltage capacitance 10 in the second half-wave voltage-multiplying circuit is located at the in-phase end of second subprime winding 5.

Embodiment 6, and in conjunction with Fig. 6, embodiment 6 is that with the difference of embodiment 1 second high-voltage capacitance 10 in the second half-wave voltage-multiplying circuit is located at the in-phase end of second subprime winding 5.

Claims

1. microwave oven; Comprise magnetron and high-tension transformer, high-tension transformer comprises skeleton, Filament Winding and elementary winding again, and Filament Winding and magnetron cathode connect to form heating circuit; Anode of magnetron ground connection; It is characterized in that: be connected with the half-wave voltage-multiplying circuit of two out-phase work between said anode of magnetron and the heating circuit, be respectively the first half-wave voltage-multiplying circuit and the second half-wave voltage-multiplying circuit, the first half-wave voltage-multiplying circuit is connected with heating circuit through the 3rd high-voltage diode; The first high-voltage diode input in the 3rd high-voltage diode output termination first half-wave voltage-multiplying circuit, the first high-voltage diode output is connected with anode of magnetron; The second half-wave voltage-multiplying circuit is connected with anode of magnetron through the 4th high-voltage diode, and the 4th high-voltage diode input is connected with the second high-voltage diode output in the second half-wave voltage-multiplying circuit, and the second high-voltage diode input is connected with heating circuit.

2. according to the said microwave oven of claim 1; It is characterized in that: the said first half-wave voltage-multiplying circuit is composed in series by the first secondary winding in-phase end, first high-voltage capacitance, first high-voltage diode and the first secondary winding end of oppisite phase in proper order, and the second half-wave voltage-multiplying circuit is composed in series by second subprime winding end of oppisite phase, second high-voltage capacitance, second high-voltage diode and second subprime winding in-phase end in proper order.

3. according to the said microwave oven of claim 1; It is characterized in that: the said first half-wave voltage-multiplying circuit is composed in series by the first secondary winding in-phase end, first high-voltage diode, first high-voltage capacitance and the first secondary winding end of oppisite phase in proper order, and the second half-wave voltage-multiplying circuit is composed in series by second subprime winding end of oppisite phase, second high-voltage diode, second high-voltage capacitance and second subprime winding in-phase end in proper order.

4. according to the said microwave oven of claim 1; It is characterized in that: the said first half-wave voltage-multiplying circuit is composed in series by the first secondary winding in-phase end, first high-voltage diode, first high-voltage capacitance and the first secondary winding end of oppisite phase in proper order, and the second half-wave voltage-multiplying circuit is composed in series by second subprime winding end of oppisite phase, second high-voltage capacitance, second high-voltage diode and second subprime winding in-phase end in proper order.

5. according to the said microwave oven of claim 1, it is characterized in that: the device that is provided with antisurge between the said heating circuit and the second half-wave voltage-multiplying circuit.

6. according to the said microwave oven of claim 1, it is characterized in that: the device that is provided with antisurge between said first half-wave voltage-multiplying circuit and the anode of magnetron.