CN204959033U - Metal organic chemistry vapour deposition resistance heater - Google Patents

Metal organic chemistry vapour deposition resistance heater Download PDF

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Publication number
CN204959033U
CN204959033U CN201520769447.5U CN201520769447U CN204959033U CN 204959033 U CN204959033 U CN 204959033U CN 201520769447 U CN201520769447 U CN 201520769447U CN 204959033 U CN204959033 U CN 204959033U
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CN
China
Prior art keywords
reflector
metal organic
resistance heater
vapor deposition
deposition resistance
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Expired - Fee Related
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CN201520769447.5U
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Chinese (zh)
Inventor
权永德
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Shanghai Heyuan Photoelectric Technology Co Ltd
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Shanghai Heyuan Photoelectric Technology Co Ltd
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Priority to CN201520769447.5U priority Critical patent/CN204959033U/en
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Abstract

The utility model discloses a metal organic chemistry vapour deposition resistance heater, it includes: four layers annular metallic board, upper and lower parallel arrangement has corresponding a plurality of round holes of arranging along the helix respectively, and top -down is first reflecting plate, first base, second reflecting plate and second base respectively, first reflecting plate, first base, second reflecting plate and second base are connected fixedly by a plurality of fixed subassemblies and a plurality of setting element mutually, a heating member is laid including being the spiral threadiness heating coil on the first reflecting plate, heating coil is by wearing to establish a plurality of support piece in a plurality of round holes support, first reflecting plate is divided into the three -section, also non -deformable under violent high low temperature changes, metal organic chemistry vapour deposition resistance heater's life can effectively prolong.

Description

Metal organic chemical vapor deposition resistance heater
Technical field
The utility model relates to metal organic chemical vapor deposition apparatus field, particularly relates to a kind of resistance heater.
Background technology
Organometallic Chemistry vapor phase deposition method (MetalOrganicChemicalVaporDeposition, be called for short MOCVD), be a kind of method of growing semiconductor film on substrate, in practical application, substrate can be LED epitaxial slice or chip.The epitaxy technique speed of MOCVD is fast, and output is high, is applicable to the extension film forming of high brightness LED.MOCVD film-forming apparatus is illustrated in figure 1 a gaseous phase deposition stove, and it comprises a reaction chamber 1, is a reaction chamber 2 in it, is provided with a well heater 3 in reaction chamber, and well heater 3 is equipped with a carrier 4 above.During grow films, substrate 5 to be filmed is placed on carrier 4, is heated by substrate 5 to be filmed, then by current-carrying gas, reaction source gas is flowed through reaction chamber by well heater 3, reaction source gas thereon generation chemical reaction to be filmed after the heating, deposition growing film.
Become known for the well heater of gaseous phase deposition stove, well heater as described in No. 303485th, TaiWan, China patent announcement, it comprises four layers of annular metal sheet, as shown in Figure 2, is respectively the first reflector 301, first pedestal 302, second reflector 303 and the second pedestal 304 from top to bottom; And the heating member be arranged on above four layers of annular metal sheet.First reflector 301 and the second reflector 303 for reflect heat that heating member is produced to carrier 4.Wherein the first reflector 301 is a slice bulk metal plate, and in vapor deposition apparatus, under being in the change of violent high/low temperature for a long time, be easily out of shape, cause reflecting effect to reduce on the one hand, another aspect easily occurs short circuit phenomenon, serious curtailment well heater work-ing life.
Utility model content
The technical problem that the utility model exists for prior art, it is not yielding that object is to provide a kind of reflector, the metal organic chemical vapor deposition resistance heater extended work-ing life.
Metal organic chemical vapor deposition resistance heater of the present utility model comprises:
Four layers of annular metal sheet, be arranged in parallel up and down, there are the corresponding some circular holes along helical row respectively, be respectively the first reflector, the first pedestal, the second reflector and the second pedestal from top to bottom, described first reflector, the first pedestal, the second reflector and the second pedestal are connected and fixed by some fixation kits and some positioning elements mutually;
One heating member, comprise helically wire and be laid on heater coil on described first reflector, described heater coil is by the some supports support be located in described some circular holes;
Described first reflector is divided into three sections, and wherein each section is little compared to whole annular anode reflector heating surface area unsegmented in prior art, is relatively not easy distortion.
In a preferred embodiment of the present utility model, the gap between the first reflector and the first pedestal is fixed with some ceramic insulators, for fixing described some strut members and insulation.
In a preferred embodiment of the present utility model, described heating member also comprise along spiral-line be equally spaced to be located in described some circular holes some to the first web member and two second web members; Described heater coil to be somely formed by connecting to the first web member by described by some isometric resistive heaters; Described heater coil becomes a path, and two ends are communicated with power supply with inner side respectively by the second web member described in outside described four layers of annular metal sheet respectively.Described some resistive heater moderate length, are not only convenient to install, and also only need change one, easy saving when occurring blowing situation.
In a preferred embodiment of the present utility model, leave the gap of 2 millimeters between described first reflector every section and fixed by described fixation kit, with this keep from heat expand and produce crimp.
In a preferred embodiment of the present utility model, described first reflector thickness is 1.5 ~ 6 millimeters, and described second reflector thickness is 0.1 ~ 3 millimeter.Because the first reflector is nearest from described resistive heater, receive heat maximum, for avoiding distortion that certain thickness need be possessed, simultaneously for avoiding heat absorption too much again can not be too thick; And the heat that described second reflector receives will lack relatively, thickness is relatively thin
In a preferred embodiment of the present utility model, the material of described four layers of annular metal sheet is molybdenum, miramint or molybdenum-lanthanum alloy, and preferably more resistant to elevated temperatures molybdenum-lanthanum alloy, can increase the service life further.Resistive heater material is tungsten or molybdenum, the better tungsten of preferred heats.
To sum up, with compared with, described first reflector is divided into three sections, each section diminishes relative to a whole annular metal sheet area of prior art, more not yielding under the change of violent high/low temperature, add to tell four pieces of annular metal sheet materials used more high temperature resistant, the work-ing life of metal organic chemical vapor deposition resistance heater of the present utility model is able to effective prolongation.
Be described further below with reference to the technique effect of accompanying drawing to design of the present utility model, concrete structure and generation, to understand the purpose of this utility model, characteristic sum effect fully.
Accompanying drawing explanation
Fig. 1 is MOCVD film-forming apparatus schematic diagram.
Fig. 2 is existing well heater schematic diagram in MOCVD film-forming apparatus.
Fig. 3 is metal organic chemical vapor deposition resistance heater stereographic map of the present utility model.
Fig. 4 is metal organic chemical vapor deposition resistance heater vertical view of the present utility model.
Fig. 5 is metal organic chemical vapor deposition resistance heater side-view of the present utility model.
Fig. 6 is the partial enlarged drawing of Fig. 5.
Fig. 7 is four layers of annular metal sheet stereographic map in Fig. 3.
Fig. 8 is the partial enlarged drawing of Fig. 7.
Embodiment
Enumerate preferred embodiment below, and come by reference to the accompanying drawings clearlyer intactly the utility model to be described.
The purpose of this utility model is achieved through the following technical solutions:
Be illustrated in figure 3 the stereographic map of metal organic chemical vapor deposition resistance heater of the present utility model, comprise four layers of annular metal sheet 31, heating member 32.
Four layers of annular metal sheet 31 material are molybdenum-lanthanum alloy, be provided with the some circular holes 310 along helical row corresponding up and down, and be connected and fixed by vertical some fixation kits 315 and some positioning elements 316, be arranged in parallel from top to bottom and be respectively the first reflector 311, first pedestal 312, second reflector 313 and the second pedestal 314, as shown in figures 5-8; First reflector 311 thickness is 1.5 ~ 6 millimeters, be divided into three sections fan-shaped, leave the gap of 2 millimeters between adjacent two sections, in each gap, be provided with two fixation kits 315; The thickness of the second reflector is 0.1 ~ 3 millimeter;
In heating member 32, some first web member 323 to be equally spaced along spiral-line, be located in some circular holes 310, some strut members 322 are located in remaining some circular holes 310, gap between first reflector and the first pedestal is fixed with some ceramic insulators 325, for fixing some strut members 322; As shown in Figure 4, material be tungsten isometric some resistive heaters 321 helically wire lay on some strut members 322, and by some, a path being connected into the first web member 323, path two ends are communicated with power supply with inner side respectively by one second web member 324 respectively outside four layers of annular metal sheet 31.
First reflector 311 is divided into three sections, and gap location has fixation kit 315 to fix, every section of area is much little compared to whole annular metal sheet area, every section of first reflector 311 expanded by heating is effectively disperseed, not easily occur tilting or recessed phenomenon, add that material is resistant to elevated temperatures molybdenum-lanthanum alloy, under high/low temperature acute variation environment, also not easily occur distortion, and then extend the work-ing life of metal organic chemical vapor deposition resistance heater.
More than describe a preferred embodiment of the present utility model in detail.Should be appreciated that those of ordinary skill in the art just can make many modifications and variations according to design of the present utility model without the need to creative work.Therefore, all technician in the art according to design of the present utility model on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment, all should by the determined protection domain of claims.

Claims (9)

1. a metal organic chemical vapor deposition resistance heater, it comprises:
Four layers of annular metal sheet, be arranged in parallel up and down, there are the corresponding some circular holes along helical row respectively, be respectively the first reflector, the first pedestal, the second reflector and the second pedestal from top to bottom, described first reflector, the first pedestal, the second reflector and the second pedestal are connected and fixed by some fixation kits and some positioning elements mutually;
One heating member, comprise helically wire and be laid on heater coil on described first reflector, described heater coil is by the some supports support be located in described some circular holes;
It is characterized in that, described first reflector is divided into three sections.
2. metal organic chemical vapor deposition resistance heater as claimed in claim 1, is characterized in that: described heating member also comprise along spiral-line be equally spaced to be located in described some circular holes some to the first web member and two second web members; Described heater coil to be somely formed by connecting to the first web member by described by some isometric resistive heaters; Described heater coil becomes a path, and two ends are communicated with power supply with inner side respectively by the second web member described in outside described four layers of annular metal sheet respectively.
3. metal organic chemical vapor deposition resistance heater as claimed in claim 2, be is characterized in that: leave the gap of 2 millimeters between described first reflector every section and fixed by described fixation kit.
4. metal organic chemical vapor deposition resistance heater as claimed in claim 2, is characterized in that: described first reflector thickness is 1.5 ~ 6 millimeters.
5. metal organic chemical vapor deposition resistance heater as claimed in claim 2, is characterized in that: described second reflector thickness is 0.1 ~ 3 millimeter.
6. metal organic chemical vapor deposition resistance heater as claimed in claim 2, is characterized in that: described four layers of annular metal sheet material are molybdenum, miramint or molybdenum-lanthanum alloy.
7. metal organic chemical vapor deposition resistance heater as claimed in claim 6, is characterized in that: described four layers of annular metal sheet material are molybdenum-lanthanum alloy.
8. metal organic chemical vapor deposition resistance heater as claimed in claim 2, is characterized in that: described resistive heater material is tungsten or molybdenum.
9. metal organic chemical vapor deposition resistance heater as claimed in claim 8, is characterized in that: described resistive heater material is tungsten.
CN201520769447.5U 2015-09-29 2015-09-29 Metal organic chemistry vapour deposition resistance heater Expired - Fee Related CN204959033U (en)

Priority Applications (1)

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CN201520769447.5U CN204959033U (en) 2015-09-29 2015-09-29 Metal organic chemistry vapour deposition resistance heater

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Application Number Priority Date Filing Date Title
CN201520769447.5U CN204959033U (en) 2015-09-29 2015-09-29 Metal organic chemistry vapour deposition resistance heater

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CN204959033U true CN204959033U (en) 2016-01-13

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202016103834U1 (en) * 2016-07-15 2017-10-19 Aixtron Se Device for heating a susceptor of a CVD reactor
CN109136885A (en) * 2017-06-19 2019-01-04 北京北方华创微电子装备有限公司 Coil regulating mechanism, induction heating apparatus and vapor deposition apparatus
CN109207964A (en) * 2018-10-19 2019-01-15 济南大学 A kind of heating device for electric resistor heating type MOCVD reaction chamber
CN110983299A (en) * 2019-12-04 2020-04-10 江苏实为半导体科技有限公司 Heating plate for MOCVD reaction chamber

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202016103834U1 (en) * 2016-07-15 2017-10-19 Aixtron Se Device for heating a susceptor of a CVD reactor
CN109136885A (en) * 2017-06-19 2019-01-04 北京北方华创微电子装备有限公司 Coil regulating mechanism, induction heating apparatus and vapor deposition apparatus
CN109207964A (en) * 2018-10-19 2019-01-15 济南大学 A kind of heating device for electric resistor heating type MOCVD reaction chamber
CN110983299A (en) * 2019-12-04 2020-04-10 江苏实为半导体科技有限公司 Heating plate for MOCVD reaction chamber
CN110983299B (en) * 2019-12-04 2024-05-14 江苏实为半导体科技有限公司 Heating plate for MOCVD reaction chamber

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160113

Termination date: 20160929

CF01 Termination of patent right due to non-payment of annual fee