CN204954606U - Bearing head's diaphragm and bearing head for chemical mechanical polishing apparatus - Google Patents
Bearing head's diaphragm and bearing head for chemical mechanical polishing apparatus Download PDFInfo
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- CN204954606U CN204954606U CN201520677729.2U CN201520677729U CN204954606U CN 204954606 U CN204954606 U CN 204954606U CN 201520677729 U CN201520677729 U CN 201520677729U CN 204954606 U CN204954606 U CN 204954606U
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- barrier film
- mechanical polishing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The utility model relates to a bearing head's diaphragm and bearing head for chemical mechanical polishing apparatus, above -mentioned for the chemical mechanical polishing apparatus bearing head's diaphragm include: the bottom plate is formed to adj. Tabular by flexible material to face to the wafer pressurizes, the lateral wall is formed by flexible material to extend to the upside from the marginal portion of above -mentioned bottom plate and form, form at the upside of above -mentioned lateral wall more than bottom surface partly of pressurization cavity, and interior side ring, the material that is higher than above -mentioned flexible material by hardness forms to combine together transmission from the effort of above -mentioned pressurization cavity to the fringe region transmission of above -mentioned wafer with the inner peripheral surface of above -mentioned lateral wall, the utility model discloses a bearing head's diaphragm plays as utilizing the interior side ring of fixing unfamiliar lateral wall based on the inflation of outermost lateral pressure cavity for the chemical mechanical polishing apparatus to from the effect of pressurization cavity to the media of wafer transmission plus -pressure, can the fringe region wholeness of whole wafer channel into even plus -pressure.
Description
Technical field
The utility model relates to a kind of barrier film of chemical mechanical polishing apparatus carrier head, in detail, a kind of barrier film that can import the chemical mechanical polishing apparatus carrier head of the stressed structure that the fringe region to wafer imports in chemical-mechanical polishing process is equably related to.
Background technology
Chemically mechanical polishing (CMP) device be in order in the manufacture process of semiconductor element for removing the difference in height between concavo-convex the caused cell area of the wafer surface generated because repeatedly performing mask, etching and cabling processes etc. and peripheral circuit area, realize wide area planarized, and in order to improve the wafer surface roughness required along with circuit formation contact/wiring membrane separation and high integrated component, precise polished processing is carried out to the surface of wafer.
In this CMP device, before carrying out polishing process and after carrying out polishing process, carrier head is with under the burnishing surface making wafer and polishing pad state in opposite directions, above-mentioned wafer is pressurizeed, thus execution polishing process, and, if polishing process terminates, then direct or indirect vacuum suction is carried out to wafer, thus move to next operation with the state held.
Fig. 1 is the sketch of carrier head 1.As shown in Figure 1, carrier head 1 comprises: body 120, rotates from external reception rotary driving force; Back-up ring 130, installs with the annular of surrounding body 120, and together rotates with body 120; The barrier film 140 of elastic material, is fixed on body 120, and the space between above-mentioned barrier film 140 and body 120 is formed with multiple pressure chamber C1, C2, C3, C4, C5; And pressure control portion 150, send into air by air pressure supply road 155 to pressure chamber C1, C2, C3, C4, C5 or deflate from pressure chamber C1, C2, C3, C4, C5, thus regulating pressure.
The barrier film 140 of elastic material is formed with sidewall 142 at the edge termination of the smooth base plate 141 for pressurizeing to wafer W in the mode of bending.The end 140a of the central portion of barrier film 140 is fixed on base 120, thus forms the inlet hole 77 directly sucking wafer W.Also can form inlet hole without the need to the central portion at barrier film 140, but the central portion of barrier film 140 is formed as the face for pressurizeing to wafer W.Between the sidewall 142 of the center of barrier film 140 to barrier film 140, be formed with multiple next door 13 being fixed on the annular of base 120, thus with next door 13 for benchmark, multiple pressure chamber C1, C2, C3, C4, C5 are with concentric circles morphologic arrangement.
Wherein, pressurised chamber Cx is formed in the upside of barrier film sidewall 142, the inclined plane Cs that length is designated as r1 is formed in the bottom surface of pressurised chamber Cx, and be formed with the inclined plane contacted with inclined plane Cs, thus making transferring element 160 be fixed on sidewall 142, the plus-pressure Fv that above-mentioned transferring element 160 comes downwards by the pressure of pressurised chamber Cx transmits the directed force F cx promoted.Thus, if the pressure of pressurised chamber Cx is risen from pressure control portion 150 by air pressure supply road 155, then the plus-pressure of vertical direction is pressurizeed by the inclined plane Cs of pressurised chamber Cx and the edge of transferring element 160 to wafer W, thus also performs chemical-mechanical polishing process swimmingly to the fringe region of wafer W.
But, along with plus-pressure Fv is by the fringe region transmission of inclined plane Cs along sidewall 142 to wafer W of pressurised chamber Cx, the barrier film 140 of the carrier head 1 shown in Fig. 1 and Fig. 2 compared to other pressure chamber C1, C2 ... need the air pressure improving pressurised chamber Cx with the inclination angle of inclined plane Cs accordingly, therefore, not only make the capacity of pressure control portion 150 increase, and cannot control exactly to other pressure chamber C1, C2 ... the air pressure of supply.
In order to address this is that, proposed the barrier film of the form shown in Fig. 3 by No. 10-2014-22745th, korean patent application by the applicant.Be pursuant to this, be formed with pressurised chamber Cx in the upside of the sidewall 242 of barrier film 240, and sidewall 242 be located immediately at the downside of the tabular surface 242s of pressurised chamber Cx.For this reason, be formed with the stator 2422,2421 launched from sidewall 242 to horizontal direction, and each stator 2421,2422 is individually fixed in back-up ring 230 and body 120.And another Extendible flake 2423 extends in the mode of the pressurised chamber Cx forming the annular of surrounding above-mentioned tabular surface 242s, and combines with back-up ring 230.
Thus, as shown in Figure 4, if come to pressurised chamber Cx air supply pressure from pressure control portion 150 via air pressure supply road 255x, then supplied air pressure can be pressurizeed to tabular surface 242s, and the directed force F cx that tabular surface 242s pressurizes can directly be transmitted downwards by sidewall Fv, thus the fringe region e of wafer W is pressurizeed.In the accompanying drawings, can be space in order to retain between stator 2421 and Extendible flake 2423 as 135 of unaccounted Reference numeral and be inserted in the ring spacer of back-up ring 230.
But, the air-pressure controlling strengthening cavity C x is being become and other pressure chamber C5, C4, when similar size, along with the directed force F cx of bottom surface (area of the annular acted on by Fcx generation) the generation effect to pressurised chamber Cx all transmits downwards along sidewall 241, compared to passing through other pressure chamber C5, C4, the plus-pressure that transmits of bottom surface 241s, improved carrier head 2 barrier film 240 formed in the manner applies to wafer in the mode of the plus-pressure Fv of the region e1 overconcentration of power in the managerial system of the Outboard Sections to fringe region e on the contrary.
Like this, along with cannot carry out in the fringe region e of the wafer W of chemically mechanical polishing swimmingly in the past, region e1 concentrates larger plus-pressure Fv laterally, the polishing pad generation rebound phenomena of the inside region e2 that the end at the edge of the barrier film base plate 141 corresponding with exterior lateral area e1 is adjacent, causes on the contrary by the problem of less plus-pressure to wafer generation effect.Namely, as shown in Figure 6, exterior lateral area e1 in the fringe region e of wafer causes to be greater than aequum polished amount because of too much plus-pressure carries out the problem of polishing, and the inside region e2 in the fringe region e of wafer causes to be less than aequum on the contrary polished amount because of too small plus-pressure carries out the problem of polishing.
And then, have for interfere in physical mode and prevent barrier film sidewall 142 heave in side ring 272 and outer ring 271, because becoming the outer ring 271 of the bang path of plus-pressure Fv and importing too much stressed problem in exterior lateral area e1 in the fringe region e of wafer.
Therefore, just be badly in need of at present both the pressure of pressurised chamber Cx can being maintained with pressure chamber C1, C2 ... similar size, again can the whole fringe region e of wafer reliably import with pressure chamber C1, C2 ... the stressed scheme of the similar size of plus-pressure.
Utility model content
The technical problem solved
The utility model proposes under above-mentioned technical background, the purpose of this utility model is, be provided in chemical-mechanical polishing process, barrier film and the carrier head of the chemical mechanical polishing apparatus carrier head of the stressed structure that the fringe region to wafer imports can be imported equably.
Namely, the purpose of this utility model is, even if maintain the pressure of the pressurised chamber on the upside of the sidewall pressurizeed to the fringe region of wafer with the level similar with the pressure of other pressure chamber, uniform plus-pressure also can be utilized to pressurize to the exterior lateral area at the edge to wafer and inside region.
Further, the purpose of this utility model is, even if barrier film base plate generation upper and lower displacement, also can import uniform plus-pressure to the fringe region of wafer equably all the time.
Thus, the purpose of this utility model is, makes the whole fringe region of wafer the same with other regions, carries out the polishing corresponding with required polished amount by chemical-mechanical polishing process.
Technical scheme
To achieve these goals, the utility model provides the barrier film of chemical mechanical polishing apparatus carrier head, it is characterized in that, comprising: base plate, is formed as tabular by flexible materials, and pressurizes to the plate face of wafer; Sidewall, is formed by flexible materials, and forms from the marginal portion extension of above-mentioned base plate, forms a more than part for the bottom surface of pressurised chamber in the upside of above-mentioned sidewall; And interior side ring, formed by the material of hardness higher than above-mentioned flexible materials, and combine with the inner peripheral surface of above-mentioned sidewall, to transmit from above-mentioned pressurised chamber to the active force that the fringe region of above-mentioned wafer transmits.
This is in order to transmit the active force of the pressurised chamber of the upside being positioned at barrier film sidewall by being inserted in side ring in barrier film sidewall, thus make plus-pressure based on the air pressure of pressurised chamber as the plus-pressure one barrier film sidewall of flexible materials and inner side ring going down in the same way, plus-pressure is transmitted in the whole fringe region dispersion of wafer, thus the plus-pressure solved in the past only concentrate on the problem of the exterior lateral area of the fringe region of wafer.
That is, the utility model fixes side ring in barrier film sidewall as the expansion utilized based on outermost pressure chamber, and from pressurised chamber to the stressed medium of wafer transferring, can import uniform plus-pressure at the fringe region of whole wafer.
And then, along with the raw material of interior side ring are formed by the material of hardness higher than barrier film sidewall, guide and transmit mainly through the high side ring of hardness from the pressurised chamber of the upside being positioned at barrier film sidewall to the plus-pressure of wafer transferring, thus accurately can also transmit plus-pressure to the inside region of the fringe region of wafer.
In the utility model, under the state applying malleation to above-mentioned pressurised chamber, the upper end of above-mentioned interior side ring contacts with the bottom surface of above-mentioned pressurised chamber, simultaneously, the lower end of above-mentioned interior side ring contacts with the upper surface of above-mentioned base plate, thus to the plus-pressure of the above-mentioned pressurised chamber of above-mentioned wafer transferring, make plus-pressure without the need to only directly importing from pressurised chamber to wafer by interior side ring via sidewall, finally can to the inside region importing plus-pressure more accurately of the fringe region of wafer.
Wherein, under the state not applying malleation to above-mentioned pressurised chamber, the upper end of above-mentioned interior side ring can be in the state do not contacted with the bottom surface of above-mentioned pressurised chamber.Thus, along with to pressurised chamber air supply pressure, the bottom surface of pressurised chamber can prevent the bottom surface of the pressurised chamber of flexible materials impaired by the friction between the upper end of interior side ring.
Equally, under the state not applying malleation to above-mentioned pressurised chamber, the lower end of above-mentioned interior side ring can be in the state do not contacted with above-mentioned base plate.Thus, can prevent from, along with to pressurised chamber air supply pressure, moving below the hoop of inner side, on the contrary, due to the friction produced when expanding along with barrier film base plate and become to assign to mobile as radial direction, cause the barrier film base plate of flexible materials impaired.
On the other hand, the spatial portion along radial direction can be provided with between the lower end of above-mentioned interior side ring and above-mentioned sidewall.Thus, following effect can be obtained: according to the pressure state of pressurised chamber, pressurize below the hoop of inner side, and the distortion of oppose side wall has an impact, thus can prevent the polished amount of the fringe region of wafer from carrying out change sensitively according to the pressure of pressurised chamber.
In barrier film of the present utility model side ring outer peripheral face on be formed with cannelure, thus to combine with the state of the protuberance of the inner peripheral surface being inserted in barrier film sidewall.Thus, barrier film sidewall and interior side ring can be made firmly to combine.
And along with the protuberance of barrier film sidewall and the cannelure of interior side ring combine with the form inserted, the inner peripheral surface of above-mentioned interior side ring protrudes to the inside and forms.Thus, the inclined plane tilted to the inside is formed in the upper end of the inner peripheral surface of interior side ring, make to transmit directly to below and along inclined plane to after inner sides of radius direction is moved from the plus-pressure of the edge transfer to wafer of pressurised chamber transmission, transmit downwards, therefore, prevent too much active force to the inside region generation effect of the fringe region of wafer by interior side ring.
Further, the inner peripheral surface of above-mentioned interior side ring extends from above-mentioned inclined plane to vertical direction, thus can form the contact surface of wider annular with above-mentioned base plate.
On the other hand, in the utility model, the outer peripheral face of above-mentioned sidewall is provided with the outer ring of material hardness higher than above-mentioned flexible materials, thus above-mentioned sidewall can be suppressed to the expansion of radial direction.Thus, can also carry out by barrier film sidewall and outer ring the plus-pressure importing pressurised chamber to the exterior lateral area of the fringe region of wafer.
Like this, when the outer peripheral face of sidewall arranges the outer ring expanded for the radial direction suppressed to barrier film sidewall, outer ring can be passed through more definitely downwards and carry out the plus-pressure to wafer transferring to the plus-pressure of wafer going down with by interior side ring.
The more important thing is, in the utility model, compared to the inner circumferential end of above-mentioned outer ring, make the periphery end of above-mentioned interior side ring more by radial outside, thus carry out with merga pass outer ring and barrier film sidewall the plus-pressure that imports to the exterior lateral area of the fringe region of wafer and the stressed form that imported to the inside region of the fringe region of wafer by interior side ring is imported to the fringe region of wafer, thus, the whole fringe region that can obtain to wafer applies uniform stressed advantageous effects.
The utility model proposes under above-mentioned technical background, the purpose of this utility model is, provides barrier film and the carrier head of the chemical mechanical polishing apparatus carrier head that can import the stressed structure that the fringe region to wafer imports in chemical-mechanical polishing process equably.
Namely, the purpose of this utility model is, even if maintain the pressure of the pressurised chamber on the upside of the sidewall pressurizeed to the fringe region of wafer with the level similar with the pressure of other pressure chamber, uniform plus-pressure also can be utilized to pressurize to the exterior lateral area at the edge of wafer and inside region.
Further, the purpose of this utility model is, even if barrier film base plate generation upper and lower displacement, also can import uniform plus-pressure to the fringe region of wafer equably all the time.
Thus, the purpose of this utility model is, makes the whole fringe region of wafer the same with other regions, carries out the polishing corresponding with required polished amount by chemical-mechanical polishing process.
On the other hand, the utility model provides the carrier head of chemical mechanical polishing apparatus, and the carrier head of above-mentioned chemical mechanical polishing apparatus comprises: body, rotates from external reception rotary driving force; And the barrier film of said structure, be positioned above-mentioned body, come together to rotate with above-mentioned body, and be formed with pressure chamber between above-mentioned barrier film and above-mentioned body, thus the pressure by controlling above-mentioned pressure chamber in chemical-mechanical polishing process pressurizes downwards and is positioned at the wafer of bottom surface.
The effect of utility model
According to the utility model, following advantageous effects can be obtained: transmit plus-pressure from the pressurised chamber of the upside being positioned at barrier film sidewall to the edge inside region of above-mentioned wafer by side ring in being formed by the material of more high rigidity at barrier film sidewall, to make in the edge exterior lateral area of wafer by barrier film sidewall and outer ring to transmit plus-pressure, thus to disperse the stressed form of pressurised chamber to pressurize equably to the whole fringe region of wafer, thus, even if supply the pressure of pressurised chamber with the size similar with the pressure of pressure chamber, also can be the same with the region of being pressurizeed by pressure chamber, fringe region to wafer imports uniform plus-pressure exactly.
And, the utility model can obtain following advantageous effects: the outer peripheral face of barrier film sidewall is provided with outer ring, thus when outermost pressure chamber expands, both the phenomenon that sidewall is heaved to radial outside can have been suppressed, can make again to maintain uniform level to the plus-pressure of the edge exterior lateral area transmission of wafer with the plus-pressure being transmitted even size by side ring in bending shape higher than the outer ring of above-mentioned flexible materials by the barrier film sidewall of flexible materials and the hardness of material, thus plus-pressure can be imported equably to the fringe region of wafer.
Additionally, the utility model can obtain following advantage: under the state not applying air pressure to pressurised chamber, the top and bottom of interior side ring are maintained with the state do not contacted with bottom surface and the barrier film base plate of pressurised chamber respectively, and along with applying air pressure to pressurised chamber, the underrun of pressurised chamber expands to contact with the upper end of interior side ring, thus, interior side ring promotes downwards on one side, while contact with barrier film base plate, thus pass through inner side hoop wafer transferring plus-pressure along with from pressurised chamber, the barrier film sidewall formed by lower flexible materials and the impaired of base plate can be minimized, and plus-pressure can be imported to the edge of wafer.
And, the utility model obtains following effect: along with being provided with towards the spatial portion of radial direction between the bottom of interior side ring and barrier film sidewall, interior side ring pressurizes downwards according to the pressure state of pressurised chamber, and the continuity alleviated between the distortion of sidewall and the phenomenon of interior side ring pressing barrier film bottom surface, thus barrier film is prevented to be distorted in the process can pressurizeed at the fringe region utilizing the pressure of pressurised chamber to wafer.
Especially, the utility model can obtain following advantageous effects: compared to the periphery end of side ring in the inner peripheral surface being arranged on barrier film sidewall, make the inner circumferential end of the outer ring of the outer peripheral face being arranged at barrier film sidewall more by radially inner side, thus, along with make along barrier film sidewall and outer ring come going down plus-pressure and along interior side ring and the plus-pressure that going down is carried out in the path comprising inclination import with the fringe region of the form merged into a single whole to wafer, thus can disperse more equably and apply the plus-pressure that imports to the fringe region of wafer.
Like this, the utility model can obtain following advantageous effects: the same with the region of being undertaken pressurizeing by pressure chamber, the whole fringe region to wafer imports uniform plus-pressure, thus reliably can regulate the polishing profile of wafer with required form.
Accompanying drawing explanation
Fig. 1 is the half sectional view of the structure of the carrier head illustrated in the past.
Fig. 2 is the enlarged drawing of " A " part of Fig. 1.
Fig. 3 is the figure of the side wall construction of the barrier film of another form illustrated in the past.
Fig. 4 is the figure be described for the pressurization principle at the edge of the wafer to the barrier film based on Fig. 3.
Fig. 5 is the figure of the fringe region of display wafer.
Fig. 6 illustrates the figure utilizing the barrier film of Fig. 3 wafer to be carried out to the polishing profile of polishing.
Fig. 7 is the figure of the structure of the barrier film sidewall that an embodiment of the present utility model is shown.
Fig. 8 is the figure that the effect utilizing the fringe region of the barrier film of Fig. 7 to wafer to pressurize is shown.
Fig. 9 illustrates the figure utilizing the barrier film of Fig. 7 wafer to be carried out to the polishing profile of polishing.
Figure 10 to Figure 12 is the figure of the structure of the barrier film sidewall that another embodiment of the present utility model is shown.The explanation of Reference numeral
W: wafer C1, C2, C3, C4, C5: pressure chamber
2': carrier head 120: body
130,230: back-up ring 400,400', 400 ", 400' ": barrier film
410: base plate 420: sidewall
421: the first stator 422: the second stators
423: cover plate 429: partition
430: interior side ring 440: outer ring
Detailed description of the invention
The barrier film 400 of the chemical mechanical polishing apparatus carrier head of an embodiment of the present utility model and carrier head are described in detail.
The carrier head 2' of an embodiment of the present utility model is the same with carrier head 1 in the past, comprising: body 120, and being connected with driving shaft (not shown) fetches rotation; The barrier film 400 formed by elastic bendable raw material, in body 120, is fixed on body 120, and between body 120 mineralization pressure chamber ..., C4, C5; And pressure control portion 150, to pressure chamber ..., C4, C5 air supply pressure regulates pressure.That is, the utility model there are differences with structure in the past in the marginal portion of barrier film 400.
As shown in Figure 7, above-mentioned barrier film 400 comprises: base plate 410, in the mode can pressurizeed to the plate face of wafer W in the disk form with the size corresponding with the plate face of wafer W; Sidewall 420, from the edge termination of base plate 410 upwards lateral bend extending form; Interior side ring 430, inserts and is fixed on the annular protuberance 420si outstanding to the inner peripheral surface of sidewall 420; And outer ring 440, insert and be fixed on groove 420x recessed in the outer peripheral face of sidewall 420.
Wherein, be formed in the upside of barrier film sidewall 420: the first stator 421, extend towards body 120 to inner sides of radius direction and form; Second stator 422, forms to radial outward direction extension towards back-up ring 230 in the mode comprising bend; Partition 429, is formed at the end of the second stator 422, and is inserted in the groove of back-up ring 230 with annular; And cover plate 423, extend in the upper side direction inner sides of radius direction of partition 429.
Thus, as shown in Figure 8, the end of the first stator 421 is fixed on body 120, and the end of the second stator 422 and partition 429 insert the groove that ground is fixed on back-up ring 230, and the end of cover plate 423 is fixed on body 120.Now, the bonded block 122 that the end contributing to the first stator 421 and cover plate 423 can be used to combine with body 120.Like this, along with the first stator 421, second stator 422 of barrier film sidewall 420, cover plate 423 are fixed, the pressurised chamber Cx from extraneous air sealing is formed with in the upside of sidewall 420.Come to discharge air pressure to pressurised chamber Cx air supply pressure or from pressurised chamber Cx by the air pressure supply pipe 255x of pressure control portion 150, thus apply malleation or negative pressure.
On the other hand, form as illustrated in Fig. 7 and Fig. 8, although the pressurised chamber Cx of the upside of barrier film sidewall 420 of the present utility model can utilize cover plate 423 to form, but as shown in Figure 3, also Extendible flake 2423 can be utilized to form, and, although not shown, also can be configured to partition 429 and form with any one in cover plate 423 form be separated with the second stator 422.
Barrier film sidewall 420 can form as one with barrier film base plate 410, and is easily deformed because of external force by polyurethane etc. and tool flexible materials springy is formed.Thus, if from pressure regulating part 150 to the pressure chamber be formed between barrier film base plate 410 and body 120 ..., C4, C5 apply malleation, then expand and by base plate 410, the wafer W be positioned at below it pressurizeed.
Above-mentioned interior side ring 430 is formed with cannelure 430so on outer peripheral face, and combines with barrier film sidewall 420 in the mode of the protuberance 420si being inserted in the inner peripheral surface being formed in barrier film sidewall 420 by cannelure 430so.Compare with sidewall 420 with barrier film base plate 410, interior side ring 430 is formed by hardness and the high material of intensity, thus compares with sidewall 420 with barrier film base plate 410, and the degree that elastic deformation occurs is less.Such as, interior side ring 430 can be formed by pottery, resin material, also can comprise metal material.
Under the state not applying malleation to pressurised chamber Cx, with the spaced apart fine interval c1 of the interior upper end of side ring 430 and the bottom surface of pressurised chamber Cx, and between the lower end of interior side ring 430 and barrier film base plate 410, also separate fine interval c2.C1, c2 are formed as about 0.2mm to 2mm for above-mentioned interval, if thus in chemical-mechanical polishing process to pressurised chamber Cx apply malleation, then pressurised chamber Cx expands, the bottom surface 420s of pressurised chamber Cx moves downwards, and contact with the upper end of interior side ring 430 and promote interior side ring 430 downwards, and to promote downwards and the upper surface 410s of interior side ring 430 and barrier film base plate 410 that fine movement occurs contacts and promotes base plate 410, and the inside region e2 of the fringe region e of wafer W is pressurizeed.In the accompanying drawings as the radius of center O to fringe region e that the Re of unaccounted Reference numeral is from wafer, and be the radius of wafer as the R of unaccounted Reference numeral in the accompanying drawings.
Wherein, the form that interior side ring 430 is outstanding in inner peripheral surface, especially, is formed in upper end the closer to below, the inclined plane 430p of the form that radius more diminishes.Because the material hardness of interior side ring 430 is higher than the material of barrier film sidewall 420, therefore, from the plus-pressure Fv of pressurised chamber Cx transmission, be there is the character transmitted by interior side ring 430 downwards.
But, interior side ring 430 is formed with inclined plane 430p in upper end, meanwhile, recessed channel 430so is formed in the outside of the central portion of interior side ring 430, thus the form bending in section, thus, the plus-pressure Fvi transmitted from pressurised chamber Cx is along the section tilted to after inner sides of radius direction is moved, transmit to the path shown in Pi downward, therefore, too much active force can not be produced by the inside region e2 because of interior side ring 430 to the fringe region e of wafer.
On the other hand, the outer peripheral face of barrier film sidewall 420 is formed cannelure 420x, thus combines with outer ring 440.Thus, expand even if apply air pressure to outermost pressure chamber C5 in chemical-mechanical polishing process, sidewall 420 also can be suppressed to protrude to radial outward direction, therefore, can prevent the edge of base plate 410 from tilting.
Along with the outer peripheral face at barrier film sidewall 420 is in conjunction with outer ring 440, due to the directed force F cx of the expansion of pressurised chamber Cx, plus-pressure Fvo, Fvc are transmitted by the exterior lateral area e1 of sidewall 420 to the fringe region e of wafer W.
Namely, in the utility model, due to the expansion of pressurised chamber Cx, along the path being shown as Pc, plus-pressure Fvc transmits to the fringe region e of wafer W, the path of the wherein said Pc of being shown as is only along the path of barrier film sidewall 420, and, both plus-pressure Fvo can have been made to transmit to the exterior lateral area e1 of the fringe region e of wafer W along the path P o via barrier film sidewall 420 and outer ring 440, plus-pressure Fvi can be made again to transmit to the inside region e2 of the fringe region e of wafer W along the path P i by interior side ring 430.
Wherein, because the rigidity of barrier film sidewall 420 is little, therefore, the plus-pressure transmitted downwards from pressurised chamber Cx transmits to via path P o, the Pi of side ring 430 and outer ring 440 in rigidity or the high material of hardness.Wherein, along with whole interior side ring 430 is formed by rigidity and the high material of hardness, although there is the character wanting to transmit maximum force, because bang path Pi bends in plus-pressure Fvo, Fvc, Fvi, therefore, the effect of decay to the plus-pressure Fci of wafer transferring is played.
Therefore, become similar with plus-pressure Fvc, Fvo sum of being pressurizeed to wafer W by residual paths Po, Pc towards the size of path P i to the plus-pressure Fci that wafer W is pressurizeed via interior side ring 430.Therefore, overall uniform plus-pressure can be applied to the fringe region e of wafer W.
In other words, the active force transmitted to the fringe region e of wafer W along with the expansion of pressurised chamber Cx transmits downwards along the path being shown as Pi, Pc, Po with plus-pressure Fvi, Fvc, Fvo form of dispersion respectively, solve in the past cannot only to Pi, Pc fully pressurize wafer W fringe region e inside region e2 problem and apply too much stressed problem to the exterior lateral area e1 of fringe region e, thus can obtain and can import uniform stressed advantage to the whole fringe region e of wafer W.
And, even if the pressure imported to pressurised chamber Cx is maintained and pressure chamber ..., the equal level of C4, C5, also the active force carrying out pressurizeing because of the fringe region e from pressurised chamber Cx to wafer W disperses, therefore, the plus-pressure that the fringe region e to wafer W can be applied maintains and other adjacent pressure chamber ..., the plus-pressure that pressurizeed in the plate face of wafer W in C4, C5 ..., the similar level of P4, P5.
Thus, as shown in Figure 9, solve and in the exterior lateral area e1 of the fringe region e of wafer W, produced too much polished amount because of too much plus-pressure in the past, and in the inside region e2 of the fringe region e of wafer W, produce the problem of polished amount deficiency because of the plus-pressure of deficiency, thus the polishing thickness in the fringe region e of wafer can be regulated by chemical-mechanical polishing process matchingly with target polishing profile.
Especially, along with the distance R3o to the periphery end of interior side ring 430 of the present utility model is greater than the distance R4i to the inner circumferential end of outer ring 440, produce the region that plus-pressure Fvi, Fvc, Fvo of transmitting from pressurised chamber Cx repeat mutually downwards.Thus, the plus-pressure Fvo imported to the exterior lateral area e1 at the edge of wafer with merga pass outer ring 440 and barrier film sidewall 420 and the form of plus-pressure Fvi that imported to the inside region e2 at the edge of wafer by interior side ring 430 are imported to the fringe region e of wafer, thus the whole fringe region e that can obtain to wafer W applies uniform stressed advantageous effects.
On the other hand, according to an embodiment more of the present utility model, as shown in Figure 10, in barrier film 400', between the lower end of side ring 430' and barrier film sidewall 420, radial direction can be provided with spatial portion 32x.Like this, spatial portion 32x is provided with along with between the lower end and barrier film sidewall 420 of interior side ring 430', in the process of being pressurizeed by the edge inside region e2 of interior side ring 430' to wafer W, prevent the lower end of interior side ring 430' and barrier film sidewall 420 from mutually interfering, thus the edge of base plate 410 and sidewall 420 deform, and bend.
According to another embodiment of the present utility model, as shown in figure 11, the inner peripheral surface 430si of barrier film 400 " interior side ring 430 " can comprise: the inclined plane 430p of upper end; And surperficial 430sis, from central portion to lower end, extend to vertical direction with rectilinear configuration.Like this, along with interior side ring 430 " inner peripheral surface 430si in the form that extends downwards in smooth mode, instead of the form outstanding to inner sides of radius, can be guided through the size of the plus-pressure Fvi that interior side ring 430 transmits larger.When the fringe region e of wafer W needs polished amount more more than other regions, the shape of this interior side ring 430 can be suitable for.
On the other hand, an embodiment is also had according to the utility model, as shown in figure 12, barrier film 400' " interior side ring 430' " with bottom radius vector to the outstanding 430e of outward direction, thus can be formed to the mode in the groove 420y radially outward digging cutter to be inserted at the connecting portion of sidewall 420 and base plate 410.By this structure, not only can obtain and make interior side ring 430' " position be more firmly fixed on the advantage of barrier film sidewall 420; and auxiliary barrier film sidewall 420 can be obtained maintained with vertical state, and the advantage of pressurizeing to the edge of wider area to wafer of the fringe region e of wafer W.
Above; although carried out exemplary explanation by preferred embodiment to the utility model; but the utility model is not limited to this specific embodiment; the technological thought that can propose at the utility model; particularly, in the category being recorded in protection domain of the present utility model, implement the amendment of variform, change or improvement.
Claims (16)
1. a barrier film for chemical mechanical polishing apparatus carrier head, is characterized in that, comprising:
Base plate, is formed as tabular by flexible materials, and pressurizes to the plate face of wafer;
Sidewall, is formed by flexible materials, and forms from the marginal portion extension of above-mentioned base plate, forms a more than part for the bottom surface of pressurised chamber in the upside of above-mentioned sidewall; And
Interior side ring, is formed by the material of hardness higher than above-mentioned flexible materials, and combines with the inner peripheral surface of above-mentioned sidewall, to transmit from above-mentioned pressurised chamber to the active force that the fringe region of above-mentioned wafer transmits.
2. the barrier film of chemical mechanical polishing apparatus carrier head according to claim 1, is characterized in that,
Under the state applying malleation to above-mentioned pressurised chamber, the upper end of above-mentioned interior side ring contacts with the bottom surface of above-mentioned pressurised chamber, meanwhile, the lower end of above-mentioned interior side ring contacts with the upper surface of above-mentioned base plate, thus to the plus-pressure of the above-mentioned pressurised chamber of above-mentioned wafer transferring.
3. the barrier film of chemical mechanical polishing apparatus carrier head according to claim 2, is characterized in that,
Under the state not applying malleation to above-mentioned pressurised chamber, the upper end of above-mentioned interior side ring is in the state do not contacted with the bottom surface of above-mentioned pressurised chamber.
4. the barrier film of chemical mechanical polishing apparatus carrier head according to claim 2, is characterized in that,
Under the state not applying malleation to above-mentioned pressurised chamber, the lower end of above-mentioned interior side ring is in the state do not contacted with above-mentioned base plate.
5. the barrier film of chemical mechanical polishing apparatus carrier head according to claim 2, is characterized in that,
The spatial portion along radial direction is provided with between the lower end and above-mentioned sidewall of above-mentioned interior side ring.
6. the barrier film of chemical mechanical polishing apparatus carrier head according to claim 2, is characterized in that,
The outer peripheral face of above-mentioned interior side ring is formed with cannelure, is inserted into the protuberance of the inner peripheral surface of above-mentioned sidewall.
7. the barrier film of chemical mechanical polishing apparatus carrier head according to claim 6, is characterized in that,
The inner peripheral surface of above-mentioned interior side ring protrudes to the inside and forms.
8. the barrier film of chemical mechanical polishing apparatus carrier head according to claim 7, is characterized in that,
The upper end of the inner peripheral surface of above-mentioned interior side ring forms the inclined plane tilted to the inside.
9. the barrier film of chemical mechanical polishing apparatus carrier head according to claim 7, is characterized in that,
The inner peripheral surface of above-mentioned interior side ring extends from above-mentioned inclined plane to vertical direction, thus forms the contact surface of annular with above-mentioned base plate.
10. the barrier film of chemical mechanical polishing apparatus carrier head according to claim 7, is characterized in that,
To radial direction outwardly, above being inserted into of its part is dug the groove of cutter from the connecting portion of above-mentioned sidewall and above-mentioned base plate to radial outward direction in the bottom of above-mentioned interior side ring.
The barrier film of 11. chemical mechanical polishing apparatus carrier heads according to any one of claim 1 to 10, is characterized in that,
The outer peripheral face of above-mentioned sidewall is provided with outer ring, and the hardness of the material of above-mentioned outer ring higher than above-mentioned flexible materials, thus suppresses above-mentioned sidewall to the expansion of radial direction.
The barrier film of 12. chemical mechanical polishing apparatus carrier heads according to claim 11, is characterized in that,
Compared with the inner circumferential end of above-mentioned outer ring, the periphery end of above-mentioned interior side ring is more by radial outside.
The barrier film of 13. chemical mechanical polishing apparatus carrier heads according to claim 12, is characterized in that,
The outer peripheral face of above-mentioned sidewall is formed the cannelure for accommodating above-mentioned outer ring.
The carrier head of 14. 1 kinds of chemical mechanical polishing apparatus, is characterized in that, comprising:
Body, rotates from external reception rotary driving force; And
Barrier film according to any one of claim 1 to 10, be positioned above-mentioned body, and together rotate with above-mentioned body, and be formed with pressure chamber between above-mentioned barrier film and above-mentioned body, thus the pressure by controlling above-mentioned pressure chamber in chemical-mechanical polishing process pressurizes downwards and is positioned at the wafer of bottom surface.
The carrier head of 15. chemical mechanical polishing apparatus according to claim 14, is characterized in that,
The outer peripheral face of above-mentioned sidewall is provided with the outer ring of hardness higher than above-mentioned flexible materials, thus suppresses above-mentioned sidewall to the expansion of radial direction.
The carrier head of 16. chemical mechanical polishing apparatus according to claim 15, is characterized in that,
Compared with the inner circumferential end of above-mentioned outer ring, the periphery end of above-mentioned interior side ring is more by radial outside.
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020140126836A KR101589445B1 (en) | 2014-09-23 | 2014-09-23 | Carrier head of chemical mechanical apparatus and membrane used therein |
| KR10-2014-0126836 | 2014-09-23 |
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| CN204954606U true CN204954606U (en) | 2016-01-13 |
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| CN201520677729.2U Active CN204954606U (en) | 2014-09-23 | 2015-09-01 | Bearing head's diaphragm and bearing head for chemical mechanical polishing apparatus |
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| CN (1) | CN204954606U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108015668A (en) * | 2016-10-28 | 2018-05-11 | 株式会社荏原制作所 | Base plate keeping device, elastic membrane, the replacing options of lapping device and elastic membrane |
| CN108732052A (en) * | 2018-05-03 | 2018-11-02 | 山西大学 | Side pressure microhardness testers |
| CN108885984A (en) * | 2016-04-01 | 2018-11-23 | 姜準模 | It is formed with the chemical mechanical polishing device carrier head of substrate containing component |
| CN112548848A (en) * | 2019-09-26 | 2021-03-26 | 清华大学 | Bearing head and chemical mechanical polishing equipment |
| US11179823B2 (en) | 2016-10-28 | 2021-11-23 | Ebara Corporation | Substrate holding apparatus, elastic membrane, polishing apparatus, and method for replacing elastic membrane |
| CN114473853A (en) * | 2021-12-21 | 2022-05-13 | 北京子牛亦东科技有限公司 | Diaphragm of grinding head for chemical mechanical grinding equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140067325A (en) * | 2012-11-26 | 2014-06-05 | 강준모 | Carrier head for chemical mechanical polishing system |
| KR101411836B1 (en) * | 2012-11-27 | 2014-06-25 | 주식회사 케이씨텍 | Membrane of carrier head in chemical mechanical polishing apparatus and carrier head using same |
| KR101395380B1 (en) * | 2013-04-18 | 2014-05-16 | 주식회사 케이씨텍 | Membrane in carrier head |
| KR101293485B1 (en) * | 2013-07-08 | 2013-08-06 | 주식회사 케이씨텍 | Retainer ring of carrier head of chemical mechanical apparatus and membrane used therein |
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2014
- 2014-09-23 KR KR1020140126836A patent/KR101589445B1/en active IP Right Grant
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- 2015-09-01 CN CN201520677729.2U patent/CN204954606U/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108885984A (en) * | 2016-04-01 | 2018-11-23 | 姜準模 | It is formed with the chemical mechanical polishing device carrier head of substrate containing component |
| CN108885984B (en) * | 2016-04-01 | 2024-03-08 | 姜準模 | Carrier head for chemical mechanical polishing apparatus having substrate accommodating member formed thereon |
| CN108015668A (en) * | 2016-10-28 | 2018-05-11 | 株式会社荏原制作所 | Base plate keeping device, elastic membrane, the replacing options of lapping device and elastic membrane |
| US11179823B2 (en) | 2016-10-28 | 2021-11-23 | Ebara Corporation | Substrate holding apparatus, elastic membrane, polishing apparatus, and method for replacing elastic membrane |
| US11958163B2 (en) | 2016-10-28 | 2024-04-16 | Ebara Corporation | Substrate holding apparatus, elastic membrane, polishing apparatus, and method for replacing elastic membrane |
| CN108732052A (en) * | 2018-05-03 | 2018-11-02 | 山西大学 | Side pressure microhardness testers |
| CN112548848A (en) * | 2019-09-26 | 2021-03-26 | 清华大学 | Bearing head and chemical mechanical polishing equipment |
| CN114473853A (en) * | 2021-12-21 | 2022-05-13 | 北京子牛亦东科技有限公司 | Diaphragm of grinding head for chemical mechanical grinding equipment |
| CN114473853B (en) * | 2021-12-21 | 2023-05-02 | 北京子牛亦东科技有限公司 | Diaphragm for grinding head of chemical mechanical grinding equipment |
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| Publication number | Publication date |
|---|---|
| KR101589445B1 (en) | 2016-01-29 |
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Effective date of registration: 20180504 Address after: Korea city Daoan Patentee after: Case Polytron Technologies Inc Address before: Jing Jidao Patentee before: K. C. Tech Co., Ltd. |