CN204834689U - LED packaging structure is prevented vulcanizing by height - Google Patents
LED packaging structure is prevented vulcanizing by height Download PDFInfo
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- CN204834689U CN204834689U CN201520589491.8U CN201520589491U CN204834689U CN 204834689 U CN204834689 U CN 204834689U CN 201520589491 U CN201520589491 U CN 201520589491U CN 204834689 U CN204834689 U CN 204834689U
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Abstract
The utility model provides a LED packaging structure is prevented vulcanizing by height, include: support, setting are in LED chip and cover on the support the encapsulation colloid of LED chip, wherein, the support includes the base, sets up district, its characterized in that are laid to reflection cup and LED chip on the base: the internal bottom of reflection cup cavity is provided with the one deck and prevents vulcanizing the film. Should prevent vulcanizing the film can effectively prevent the element sulphur, the halogen, the reaction takes place with the internal bottom silvered film of reflection cup cavity for infiltration such as oxygen element, cause the device light decay to appear or even die the lamp phenomenon, LED chip surface is not provided with and prevents vulcanizing the film, it has absorption to the light that the LED chip sent to prevent to vulcanize the film, the luminous efficiency of LED device has been ensured, set up stair structure or hierarchic structure bottom reflection cup inner wall, can effectually prevent that the film from taking place to crawl the phenomenon at the in -process of spot printing along reflection cup inner wall.
Description
Technical field
The utility model relates to a kind of LED encapsulation structure, particularly relates to a kind of high anti-sulfuration LED encapsulation structure.
Background technology
At present, functional areas bottom LED support are essentially silver coating, because element sulphur, halogen, oxygen element etc. are easy to through packing colloid, react with the silver coating of functional areas, produce the silver compound of black, cause LED component to occur light decay phenomenon, even silver layer is by complete reaction, cause gold thread and strippable substrate, occur dead lamp phenomenon.
For preventing the silver layer generation vulcanization reaction of functional areas bottom LED support, someone proposes a kind of LED encapsulation structure, the cavity inner wall and LED chip of support cover one deck anti-sulphur oxygen film, hinder and enter LED component inside by packing colloid, react with the silver layer of functional areas, but cavity inner wall applies anti-sulphur oxygen film, easily cause the stripping of LED component in use packing colloid, reduce the reliability of LED component.
In view of the defect that prior art exists, be badly in need of the LED encapsulation structure of the high anti-sulfuration of a kind of high reliability of research and development.
Utility model content
The purpose of this utility model is, provides a kind of high anti-sulfuration LED encapsulation structure.
For solving the problems of the technologies described above, the technical solution of the utility model is:
A kind of high anti-sulfuration LED encapsulation structure, comprise: support, LED chip is on the bracket set and covers the packing colloid of described LED chip, wherein, described support comprises base, be arranged on reflector on described base and LED chip lays district, it is characterized in that: the bottom in described reflector cavity is provided with the anti-sulphide film of one deck.
Preferably, the thickness of described anti-sulphide film is not more than the thickness of described LED chip.
Preferably, the thickness of described anti-sulphide film is between 5 microns to 250 microns.
Preferably, described LED chip surface is not provided with described anti-sulphide film.
Preferably, described anti-sulphide film is one deck insulation transparent material.
Preferably, described anti-sulphide film is fluoride or silicide film.
Preferably, described anti-sulphide film is coated in the bottom in described reflector cavity by the mode of spot printing or spraying.
Preferably, ledge structure is provided with bottom described reflector inwall.
Preferably, the height of described ledge structure is not less than the thickness of described anti-sulphide film.
Preferably, hierarchic structure is provided with bottom described reflector inwall.
LED encapsulation structure disclosed in the utility model, has the following advantages:
1. the utility model provides a kind of high anti-sulfuration LED encapsulation structure, bottom in reflector cavity is provided with the anti-sulphide film of layer of transparent, bottom silver coating in the infiltrations such as effective prevention element sulphur, halogen, oxygen element and reflector cavity reacts, and causes device to occur the even dead lamp phenomenon of light decay.
2. the high anti-sulfuration LED encapsulation structure of the one that provides of the utility model, LED chip surface is not provided with anti-sulphide film, prevents anti-sulphide film from having absorption to the light that LED chip sends, ensure that the light extraction efficiency of LED component.
3. the high anti-sulfuration LED encapsulation structure of the one that provides of the utility model, the bottom in reflector cavity is only coated in due to transparent anti-sulphide film, and the thickness of this film is not more than the thickness of chip, packing colloid direct heel-tap reflex cup wall of cup contacts, and prevents the device phenomenon that packing colloid and reflector are peeled off in Long-Time Service process.
4. the high anti-sulfuration LED encapsulation structure of the one that provides of the utility model, setting table stage structure or hierarchic structure bottom reflector inwall, effectively can prevent transparent anti-sulphide film in the process of spot printing along reflector inwall generation creeping phenomenon.
Accompanying drawing explanation
Fig. 1 is the high anti-sulfuration LED encapsulation structure schematic diagram of one of the utility model embodiment one;
Fig. 2 is the high anti-sulfuration LED encapsulation structure schematic diagram of one of the utility model embodiment two;
Fig. 3 is the high anti-sulfuration LED encapsulation structure schematic diagram of one of other embodiments of the utility model;
Fig. 4 is the high anti-sulfuration LED encapsulation structure schematic diagram of one of other embodiments of the utility model;
Fig. 5 is the high anti-sulfuration LED encapsulation structure schematic diagram of one of other embodiments of the utility model.
Embodiment
For making the technical solution of the utility model clearly, below in conjunction with accompanying drawing and specific embodiment, the utility model is described in detail.
embodiment one
Composition graphs 1, introduces the high anti-sulfuration LED encapsulation structure of one described in the utility model embodiment one.
As shown in Figure 1, the present embodiment one provides a kind of high anti-sulfuration LED encapsulation structure, comprising: a support 1, be arranged on the LED chip 2 on described support 1 and cover the packing colloid 3 of described LED chip 2.
Described support 1 is metallic support or PLCC support etc., and support described in the present embodiment is metallic support, and it comprises base 11 and is arranged on the reflector 12 on described base 11.Wherein, described reflector 12 inwall is a smooth inclined-plane, and described reflector 12 can be formed by material injection such as PPA, PCT, EMC, SMC, and it is this area routine techniques, repeats no more herein.
Described support 1 comprises LED chip and lays district for carrying LED chip 2, and the bottom in described reflector 12 cavity is provided with the anti-sulphide film 13 of one deck.
Wherein, described anti-sulphide film 13 is insulation transparent materials of the high fine and close high waterproof of one deck continuous print, as silicide or fluoride film etc., its thickness is not more than the thickness (conventional chip thickness is 80 microns to 450 microns) of described LED chip 2, and described in the present embodiment, the thickness of anti-sulphide film 13 is preferably 5 microns to 250 microns.Described anti-sulphide film 13 can be coated in the bottom in the reflector cavity of described support 1 by the mode of spot printing or spraying, coating method is preferably the mode of spot printing.
Due to the insulation transparent material that described anti-sulphide film 13 is the high fine and close high waterproof of one deck continuous print, element sulphur, halogen, when oxygen element enters into LED component inside by packing colloid or other positions, anti-sulphide film 13 effectively can stop element sulphur, halogen, oxygen element reacts with the silver coating of the bottom in reflector cavity further, and then prevent LED component in Long-Time Service process because silver coating is occurred by the light decay phenomenon that reaction causes, further, although anti-sulphide film 13 is transparent material, cover LED chip 2 surface, still in certain degree, absorption can be had to the light that LED chip 2 sends, in the present embodiment, anti-sulphide film 13 is only arranged at the bottom in reflector cavity, LED chip 2 surface is not provided with this film, the light that LED chip 2 sends can not be absorbed, ensure that the light extraction efficiency of LED component, finally, the bottom of described anti-sulphide film 13 only in reflector cavity is arranged, ensure that packing colloid 3 and reflector 12 inwall have enough contacts area, can not produce in Long-Time Service process, the phenomenon that packing colloid 3 is peeled off occurs.
Described packing colloid 3 is positioned at reflector 12 inside cavity, cover LED chip 2 completely, described packing colloid 3 material is epoxy resin, silica gel or silicones, is mixed with one or more in scattering particles, red fluorescence powder, yellow fluorescent powder, green emitting phosphor in packing colloid 3.Preferably be mixed with the organic silica gel of yellow fluorescent powder and scattering particles in the present embodiment, be not limited to the present embodiment.This packing colloid is for preventing LED chip 2 by the impact of extraneous environment as impurity such as moist or dusts.
embodiment two
Composition graphs 2, introduces the high anti-sulfuration LED encapsulation structure of one described in the utility model embodiment two.
The high anti-sulfuration LED encapsulation structure of one described in the present embodiment two is similar to embodiment one, and its difference is: bottom described reflector 12 inwall, be provided with ledge structure 121, as shown in Figure 2.Particularly, the height of described ledge structure is not less than the thickness of described anti-sulphide film 13.Described anti-sulphide film 13 is only arranged at the bottom in reflector cavity, ledge structure 121 described herein can effectively prevent anti-sulphide film 13 from creeping along the inwall of reflector 12 in the process of spot printing, cause anti-sulphide film 13 excessive with the contact area of reflector 12 inwall, thus the generation phenomenon that packing colloid 3 and reflector 12 inwall are peeled off described in Long-Time Service process occur; On the other hand, bottom described reflector inwall, be provided with ledge structure 121, in the process of a coated film, had step as object of reference, also help the thickness controlling the anti-sulphide film 13 of spot printing.
In other embodiments, hierarchic structure 122 can also be provided with bottom described reflector 12 inwall.As shown in Figures 3 to 5, bottom described reflector 12 inwall, hierarchic structure 122 is seamlessly transitted by vertical plane, inclined-plane or arc surface form.Described anti-sulphide film 13 is only arranged at the bottom in reflector cavity.
LED encapsulation structure disclosed in the utility model, has the following advantages:
1. the utility model provides a kind of high anti-sulfuration LED encapsulation structure, bottom in reflector cavity is provided with the anti-sulphide film of layer of transparent, bottom silver coating in the infiltrations such as effective prevention element sulphur, halogen, oxygen element and reflector cavity reacts, and causes device to occur the even dead lamp phenomenon of light decay.
2. the high anti-sulfuration LED encapsulation structure of the one that provides of the utility model, LED chip surface is not provided with anti-sulphide film, prevents anti-sulphide film from having absorption to the light that LED chip sends, ensure that the light extraction efficiency of LED component.
3. the high anti-sulfuration LED encapsulation structure of the one that provides of the utility model, the bottom in reflector cavity is only coated in due to transparent anti-sulphide film, and the thickness of this film is not more than the thickness of chip, packing colloid direct heel-tap reflex cup wall of cup contacts, and prevents the device phenomenon that packing colloid and reflector are peeled off in Long-Time Service process.
4. the anti-sulfuration LED encapsulation structure of height that provides of the utility model, setting table stage structure or hierarchic structure bottom reflector inwall, effectively can prevent transparent anti-sulphide film in the process of spot printing along reflector inwall generation creeping phenomenon.
Be described in detail the utility model above, apply specific case and set forth principle of the present utility model and execution mode in literary composition, the explanation of above embodiment just understands method of the present utility model and core concept thereof for helping.Should be understood that; for those skilled in the art; under the prerequisite not departing from the utility model principle, can also carry out some improvement and modification to the utility model, these improve and modify and also fall in the protection range of the utility model claim.
Claims (10)
1. one kind high anti-sulfuration LED encapsulation structure, comprise: support, LED chip is on the bracket set and covers the packing colloid of described LED chip, wherein, described support comprises base, be arranged on reflector on described base and LED chip lays district, it is characterized in that: the bottom in described reflector cavity is provided with the anti-sulphide film of one deck.
2. the high anti-sulfuration LED encapsulation structure of one according to claim 1, is characterized in that: the thickness of described anti-sulphide film is not more than the thickness of described LED chip.
3. the high anti-sulfuration LED encapsulation structure of one according to claim 1, is characterized in that: the thickness of described anti-sulphide film is between 5 microns to 250 microns.
4. the high anti-sulfuration LED encapsulation structure of one according to claim 1, is characterized in that: described LED chip surface is not provided with described anti-sulphide film.
5. the high anti-sulfuration LED encapsulation structure of one according to claim 1, is characterized in that: described anti-sulphide film is one deck insulation transparent material.
6. the high anti-sulfuration LED encapsulation structure of one according to claim 1, is characterized in that: described anti-sulphide film is fluoride or silicide film.
7. the high anti-sulfuration LED encapsulation structure of one according to claim 1, is characterized in that: described anti-sulphide film is coated in the bottom in described reflector cavity by the mode of spot printing or spraying.
8. the high anti-sulfuration LED encapsulation structure of one according to claim 1, is characterized in that: be provided with ledge structure bottom described reflector inwall.
9. the high anti-sulfuration LED encapsulation structure of one according to claim 8, is characterized in that: the height of described ledge structure is not less than the thickness of described anti-sulphide film.
10. the high anti-sulfuration LED encapsulation structure of one according to claim 1, is characterized in that: be provided with hierarchic structure bottom described reflector inwall.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520589491.8U CN204834689U (en) | 2015-08-07 | 2015-08-07 | LED packaging structure is prevented vulcanizing by height |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789410A (en) * | 2016-02-23 | 2016-07-20 | 宁波凯耀电器制造有限公司 | Anti-vulcanizing LED lamp bead and manufacturing technology thereof |
| CN107507826A (en) * | 2017-08-15 | 2017-12-22 | 广东聚科照明股份有限公司 | A kind of LED encapsulation structure with the reflective bottom of sulfuration resistant |
| CN109904298A (en) * | 2019-01-22 | 2019-06-18 | 佛山市顺德区蚬华多媒体制品有限公司 | LED encapsulation structure and preparation method thereof and LED light |
| CN110190165A (en) * | 2018-12-11 | 2019-08-30 | 深圳市长方集团股份有限公司 | A kind of anti-vulcanization packaging technology of LED with sulfuration resistant liquid and release agent |
| CN110190166A (en) * | 2018-12-11 | 2019-08-30 | 深圳市长方集团股份有限公司 | A kind of anti-vulcanization packaging technology of LED with release agent |
| CN110190157A (en) * | 2018-12-11 | 2019-08-30 | 深圳市长方集团股份有限公司 | A kind of anti-vulcanization packaging technology of LED with sulfuration resistant liquid |
| CN111933781A (en) * | 2020-07-28 | 2020-11-13 | 佛山市国星光电股份有限公司 | LED device and LED lamp |
| CN117594716A (en) * | 2024-01-17 | 2024-02-23 | 深圳市中顺半导体照明有限公司 | Coating film anti-vulcanization treatment method, coating film anti-vulcanization equipment and storage medium |
-
2015
- 2015-08-07 CN CN201520589491.8U patent/CN204834689U/en active Active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789410A (en) * | 2016-02-23 | 2016-07-20 | 宁波凯耀电器制造有限公司 | Anti-vulcanizing LED lamp bead and manufacturing technology thereof |
| CN105789410B (en) * | 2016-02-23 | 2018-08-10 | 宁波凯耀电器制造有限公司 | The anti-vulcanization LED lamp bead of one kind and its manufacture craft |
| CN107507826A (en) * | 2017-08-15 | 2017-12-22 | 广东聚科照明股份有限公司 | A kind of LED encapsulation structure with the reflective bottom of sulfuration resistant |
| CN110190165A (en) * | 2018-12-11 | 2019-08-30 | 深圳市长方集团股份有限公司 | A kind of anti-vulcanization packaging technology of LED with sulfuration resistant liquid and release agent |
| CN110190166A (en) * | 2018-12-11 | 2019-08-30 | 深圳市长方集团股份有限公司 | A kind of anti-vulcanization packaging technology of LED with release agent |
| CN110190157A (en) * | 2018-12-11 | 2019-08-30 | 深圳市长方集团股份有限公司 | A kind of anti-vulcanization packaging technology of LED with sulfuration resistant liquid |
| CN109904298A (en) * | 2019-01-22 | 2019-06-18 | 佛山市顺德区蚬华多媒体制品有限公司 | LED encapsulation structure and preparation method thereof and LED light |
| CN111933781A (en) * | 2020-07-28 | 2020-11-13 | 佛山市国星光电股份有限公司 | LED device and LED lamp |
| CN117594716A (en) * | 2024-01-17 | 2024-02-23 | 深圳市中顺半导体照明有限公司 | Coating film anti-vulcanization treatment method, coating film anti-vulcanization equipment and storage medium |
| CN117594716B (en) * | 2024-01-17 | 2024-04-26 | 深圳市中顺半导体照明有限公司 | Coating film anti-vulcanization treatment method, coating film anti-vulcanization equipment and storage medium |
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