CN204792897U - High -power LED packaging structure - Google Patents
High -power LED packaging structure Download PDFInfo
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- CN204792897U CN204792897U CN201520524521.7U CN201520524521U CN204792897U CN 204792897 U CN204792897 U CN 204792897U CN 201520524521 U CN201520524521 U CN 201520524521U CN 204792897 U CN204792897 U CN 204792897U
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- power led
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Abstract
The utility model relates to a LED photosensitive tube technical field specifically provides a high -power LED packaging structure, and it includes wafer, radiating block, pin, wire and colloid, the radiating block passes through with the pin the colloid sealing becomes whole, the pin is equipped with a pair ofly, and it is insulating each other, radiating block and one of them the pin intercommunication, the wafer is installed on the radiating block, the both ends of wire respectively with wafer and another the pin intercommunication, be equipped with the recess on the radiating block, the wafer is located in the recess, just the degree of depth of recess is not less than the thickness of wafer. Above -mentioned high -power LED packaging structure is through installing the wafer in the recess of radiating block to the degree of depth of messenger's recess is not less than the thickness of wafer, can avoid the wafer because the smooth signal interference problem of light belt is advanced to the side, and simple structure is with low costs.
Description
Technical field
The utility model relates to the quick Manifold technology field of LED light, particularly relates to a kind of high-power LED encapsulation structure.
Background technology
In recent years, " environmental protection " has become the topic that all trades and professions are paid close attention to jointly, can not meet the requirement of environmental protection between traditional C DS (cadmium sulfide) photo resistance, global components and parts supplier progressively develops the photosensitive tube material of various alternative traditional C DS photo resistance.Because photosensitive tube inside chip size is large, similar traditional C DS photo resistance outline packages form (i.e. tack encapsulation) is generally adopted to encapsulate chip at present, as shown in Figure 1, radiating block 20 and pin 301 are by colloid 50 sealing integrally, wafer 10 is arranged on radiating block 20, and wire 40 is communicated with wafer 10 and another pin 302.Such packaged type is conducive to replacing for use, but is difficult to avoid wafer 10 owing to entering the light signal interference problem of light belt in side.
For avoiding this interference, there are two kinds of solutions at present, the first needs manually to add a cover cover in photo resistance outside, another kind in colloid, mixes toner make new photosensitive tube, but all there is certain defect in these two kinds of methods, the former efficiency is low, and not only toner cost is high for the latter, and the end face of new photosensitive tube has obvious decay for the induction of efficient light sources signal.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of high-power LED encapsulation structure, and wafer can be avoided owing to entering the light signal interference problem of light belt in side, and structure is simple, and cost is low.
The utility model realizes like this, a kind of high-power LED encapsulation structure, comprise wafer, radiating block, pin, wire and colloid, described radiating block and pin are by described colloid sealing integrally, described pin is provided with a pair, it insulate to each other, described radiating block is communicated with pin described in one of them, described wafer is arranged on described radiating block, the two ends of described wire are communicated with described wafer and pin described in another respectively, described radiating block is provided with groove, described wafer is positioned at described groove, and the degree of depth of described groove is not less than the thickness of described wafer.
Further, be perfused with the epoxy resin glue of band toner in described groove, described epoxy resin glue is filled in described wafer perimeter.
Further, the cross section of described groove is inverted ladder type.
The utility model compared with prior art, beneficial effect is: the high-power LED encapsulation structure described in the utility model embodiment, by wafer is arranged in the groove of radiating block, and make the degree of depth of groove be not less than the thickness of wafer, wafer can be avoided owing to entering the light signal interference problem of light belt in side, structure is simple, and cost is low.
Accompanying drawing explanation
Fig. 1 is that the great power LED master of the tack encapsulation that prior art provides looks cross-sectional schematic.
Fig. 2 is that the high-power LED encapsulation structure master that the utility model embodiment provides looks cross-sectional schematic.
Fig. 3 is the high-power LED encapsulation structure part-structure schematic top plan view that the utility model embodiment provides.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.
Fig. 2 and Fig. 3 specifically describes the high-power LED encapsulation structure shown in the utility model embodiment, comprises wafer 1, radiating block 2, pin 3, wire 4 and colloid 5, and radiating block 2 and pin 3 are by colloid 5 sealing integrally.Pin 3 is provided with a pair, and it insulate to each other, and radiating block 2 is communicated with one of them pin 3.Wafer 1 is arranged on radiating block 2, and the two ends of wire 4 are communicated with wafer 1 and another pin 3 respectively.Radiating block 2 is provided with groove 21, and wafer 1 is positioned at groove 21, and the degree of depth of groove 21 is not less than the thickness of wafer 1.
In the present embodiment, pair of pins 3 is respectively as the negative electrode of LED encapsulation structure and anode, and radiating block 2 is communicated with the pin 3 as anode.For the side of further shield wafer 1, be perfused with the epoxy resin glue 6 of band toner in groove 21, this epoxy resin glue 6 is filled in wafer 1 periphery.This filling mode, due to without the need to mixing toner in whole colloid 5, avoiding the waste of toner, significantly reducing cost.Preferably, the cross section of groove 21 is inverted ladder type.
High-power LED encapsulation structure described in the utility model embodiment, by being arranged in the groove 21 of radiating block 2 by wafer 1, and making the degree of depth of groove 21 be not less than the thickness of wafer 1, wafer 1 can be avoided owing to entering the light signal interference problem of light belt in side, structure is simple, and cost is low.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should be included within protection range of the present utility model.
Claims (3)
1. a high-power LED encapsulation structure, comprise wafer, radiating block, pin, wire and colloid, described radiating block and pin are by described colloid sealing integrally, described pin is provided with a pair, it insulate to each other, described radiating block is communicated with pin described in one of them, described wafer is arranged on described radiating block, the two ends of described wire are communicated with described wafer and pin described in another respectively, it is characterized in that, described radiating block is provided with groove, and described wafer is positioned at described groove, and the degree of depth of described groove is not less than the thickness of described wafer.
2. high-power LED encapsulation structure as claimed in claim 1, is characterized in that, be perfused with the epoxy resin glue of band toner in described groove, described epoxy resin glue is filled in described wafer perimeter.
3. high-power LED encapsulation structure as claimed in claim 1, it is characterized in that, the cross section of described groove is inverted ladder type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520524521.7U CN204792897U (en) | 2015-07-20 | 2015-07-20 | High -power LED packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520524521.7U CN204792897U (en) | 2015-07-20 | 2015-07-20 | High -power LED packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204792897U true CN204792897U (en) | 2015-11-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520524521.7U Active CN204792897U (en) | 2015-07-20 | 2015-07-20 | High -power LED packaging structure |
Country Status (1)
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| CN (1) | CN204792897U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108023007A (en) * | 2017-11-09 | 2018-05-11 | 江苏稳润光电科技有限公司 | A kind of Lamp white lights and its packaged type |
-
2015
- 2015-07-20 CN CN201520524521.7U patent/CN204792897U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108023007A (en) * | 2017-11-09 | 2018-05-11 | 江苏稳润光电科技有限公司 | A kind of Lamp white lights and its packaged type |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |