CN204732448U - Package structure for LED - Google Patents
Package structure for LED Download PDFInfo
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- CN204732448U CN204732448U CN201520271469.9U CN201520271469U CN204732448U CN 204732448 U CN204732448 U CN 204732448U CN 201520271469 U CN201520271469 U CN 201520271469U CN 204732448 U CN204732448 U CN 204732448U
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- China
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- light
- package structure
- ground floor
- backlight unit
- diode chip
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Abstract
A kind of package structure for LED, comprises substrate, light-emitting diode chip for backlight unit, encapsulated layer and multiple reflection grain.Light-emitting diode chip for backlight unit is arranged on substrate.Encapsulated layer to be arranged on substrate and coated light-emitting diode chip for backlight unit.Encapsulated layer divides into ground floor and the second layer, and ground floor is around the sidewall of light-emitting diode chip for backlight unit, and the second layer is covered on light-emitting diode chip for backlight unit and ground floor.Reflection grain is distributed in ground floor.By being distributed in ground floor by reflection grain, when the light that the sidewall of self-luminous diode chip for backlight unit penetrates is advanced in ground floor, light will be distributed in the reflection grain reflection in ground floor.So, also can advance upward after light is reflected, thus make light be penetrated by the end face of package structure for LED, so the light of the sidewall injection of self-luminous diode chip for backlight unit can also be used effectively, and then promote the luminous efficiency of package structure for LED.
Description
Technical field
The utility model relates to a kind of package structure for LED.
Background technology
Light-emitting diode (Light Emitting Diode, LED) owing to having high brightness, reaction speed is fast, volume is little, it is low to pollute, high-reliability, be applicable to the advantage such as volume production, therefore light-emitting diode also will get more and more at lighting field or the Application and Development of consumption electronic products, light-emitting diode be widely used in the light source and lighting device etc. of large-scale billboard, traffic lights, mobile phone, scanner, facsimile machine at present.Based on above-mentioned known, luminous efficiency and the brightness demand of light-emitting diode will more and more come into one's own, and are therefore the important topic that the research and development of high brightness LED will be solid-state illuminations applies.
Light-emitting diode replaces fluorescent lamp and incandescent lamp in some application, and as the such as demand scanner lamp source of reaction, the lamp source of projection arrangement, the backlight of liquid crystal display or front light-source at a high speed, illuminating lamp source on fascia, the lamp source of traffic sign and the lamp source of general lighting device etc.Compared to traditional tube, light-emitting diode have such as small volume, useful life is longer, driving voltage/electric current is lower, structural strength is higher, without significant advantages such as mercury pollution and high-luminous-efficiencies (energy-conservation).
In order to improve every characteristic of light-emitting diode further, association area is there's no one who doesn't or isn't developed painstakingly.How to provide a kind of light-emitting diode with better characteristic, one of current important research and development problem of real genus, also becomes the target that current association area needs improvement badly.
Utility model content
An object of the present utility model is providing a kind of package structure for LED, to promote the luminous efficiency of package structure for LED.
According to the utility model one execution mode, a kind of package structure for LED, comprises substrate, light-emitting diode chip for backlight unit, encapsulated layer and multiple reflection grain.Light-emitting diode chip for backlight unit is arranged on substrate.Encapsulated layer divides into ground floor and the second layer, and ground floor is around the sidewall of light-emitting diode chip for backlight unit, and the second layer is covered on light-emitting diode chip for backlight unit and ground floor.Reflection grain is arranged in ground floor.
In one or more execution mode of the present utility model, the rational height of ground floor is not higher than the maximum height of light-emitting diode chip for backlight unit.
In one or more execution mode of the present utility model, light-emitting diode chip for backlight unit has end face, and the rational height of ground floor is not higher than end face.
In one or more execution mode of the present utility model, reflection grain is uniformly distributed in ground floor.
In one or more execution mode of the present utility model, reflection grain is distributed in from the region close to light-emitting diode chip for backlight unit.
In one or more execution mode of the present utility model, the shape of encapsulated layer is roughly cube.
In one or more execution mode of the present utility model, the shape of encapsulated layer is roughly hemisphere.
In one or more execution mode of the present utility model, the total weight of reflection grain is about 0.2 to 0.6 with the ratio of the weight of the ground floor except reflection grain.
In one or more execution mode of the present utility model, the total weight of reflection grain is about 0.4 with the ratio of the weight of the ground floor except reflection grain.
In one or more execution mode of the present utility model, the inscribe diameter of a circle of reflection grain is less than 5 nanometers.
In one or more execution mode of the present utility model, package structure for LED also comprises multiple fluorescent grain, is distributed in the second layer.
By being distributed in ground floor by reflection grain, when the light that the sidewall of self-luminous diode chip for backlight unit penetrates is advanced in ground floor, light will be distributed in the reflection grain reflection in ground floor.So, also can advance upward after light is reflected, thus make light be penetrated by the end face of package structure for LED, so the light of the sidewall injection of self-luminous diode chip for backlight unit can also be used effectively, and then promote the luminous efficiency of package structure for LED.
Accompanying drawing explanation
Fig. 1 illustrates the schematic perspective view of the package structure for LED according to the utility model one execution mode;
Fig. 2 illustrates the generalized section of the package structure for LED according to the utility model one execution mode, and its profile position is the line segment 2 along Fig. 1;
Fig. 3 illustrates the generalized section of the package structure for LED according to another execution mode of the utility model, and its profile position is the line segment 2 along Fig. 1;
Fig. 4 illustrates the generalized section of the package structure for LED according to the another execution mode of the utility model;
Fig. 5 illustrates the generalized section according to the utility model package structure for LED of an execution mode again;
Fig. 6 illustrates the generalized section according to the utility model package structure for LED of an execution mode again.
Embodiment
Below will disclose multiple execution mode of the present utility model with accompanying drawing, as clearly stated, the details in many practices will be explained in the following description.But should be appreciated that, the details in these practices is not applied to limit the utility model.That is, in the utility model some embodiments, the details in these practices is non-essential.In addition, for simplifying for the purpose of accompanying drawing, some known usual structures and element illustrate in the mode simply illustrated in the accompanying drawings.
Fig. 1 illustrates the schematic perspective view of the package structure for LED 100 according to the utility model one execution mode.Fig. 2 illustrates the generalized section of the package structure for LED 100 according to the utility model one execution mode, and its profile position is the line segment 2 along Fig. 1.The different execution mode of the utility model provides a kind of package structure for LED 100.Package structure for LED 100 mainly provides and relevant function of throwing light on.
As Fig. 1 and Fig. 2 illustrate, package structure for LED 100 comprises substrate 110, light-emitting diode chip for backlight unit 120, encapsulated layer 130 and multiple reflection grain 140.Light-emitting diode chip for backlight unit 120 is arranged on substrate 110.Encapsulated layer 130 to be arranged on substrate 110 and coated light-emitting diode chip for backlight unit 120.Encapsulated layer 130 divides into ground floor 131 and the second layer 136, and ground floor 131 is around the sidewall 122 of light-emitting diode chip for backlight unit 120, and the second layer 136 is covered in light-emitting diode chip for backlight unit 120 with on Part I 131.Reflection grain 140 arranges and is distributed in ground floor 131.
The light that light-emitting diode chip for backlight unit 120 is launched can be penetrated by its sidewall 122 or end face 124, so light may be advanced towards the top of light-emitting diode chip for backlight unit 120 or both sides.When designing; usually can wish that light is penetrated by the end face 101 of package structure for LED 100; the light 10 that the end face 124 of self-luminous diode chip for backlight unit 120 is launched is advanced, so light 10 will be penetrated by the end face 101 of package structure for LED 100 because of the top towards light-emitting diode chip for backlight unit 120.But, the light 20 that the sidewall 122 of self-luminous diode chip for backlight unit 120 penetrates is advanced because of the both sides towards light-emitting diode chip for backlight unit 120, light 20 like this, by may being penetrated by the end face 101 of package structure for LED 100, thus makes light 20 be used effectively.
By being distributed in ground floor 131 by reflection grain 140, when light 20 is advanced in ground floor 131, the reflection grain 140 that light 20 will be distributed in ground floor 131 reflects.So, also can advance upward after light 20 is reflected, thus light 20 is made to be penetrated by the end face 101 of self-luminous diode package structure 100, so the light 20 that the sidewall 122 of self-luminous diode chip for backlight unit 120 penetrates can also be used effectively, and then promote the luminous efficiency of package structure for LED 100.
Specifically, reflection grain 140 is uniformly distributed in ground floor 131, and the inscribe diameter of a circle of reflection grain 140 is less than 5 nanometers.Should be appreciated that, the embodiment of above lifted reflection grain 140 is only illustration, and is not used to limit the utility model, has and usually know the knowledgeable in the utility model art, can according to actual needs, elasticity selects the embodiment of reflection grain 140.
The material of reflection grain 140 can be the material such as titanium dioxide or barium dioxide with high reflectance.It should be noted that the material of reflection grain 140 should be non-conductive herein, carry out unnecessary electric connection by the reflection grain 140 be distributed in ground floor 131 with other elements to avoid light-emitting diode chip for backlight unit 120.
Specifically, the rational height of ground floor 131 is not higher than the maximum height of light-emitting diode chip for backlight unit 120.In the present embodiment, the rational height of ground floor 131 is not higher than the end face 124 of light-emitting diode chip for backlight unit 120.So, the sidewall 122 that the reflection grain 140 be distributed in ground floor 131 only can reflect self-luminous diode chip for backlight unit 120 penetrates and the light 20 of advancing towards both sides, and the light 10 that the end face 124 that can not reflect self-luminous diode chip for backlight unit 120 penetrates and advances upward, thus avoid reflection grain 140 carry out unnecessary reflection for the light that light-emitting diode chip for backlight unit 120 is launched and reduce the luminous efficiency of package structure for LED 100.
Specifically, the shape of encapsulated layer 130 is roughly cube.Should be appreciated that, the shape of above lifted encapsulated layer 130 is only illustration, and is not used to limit the utility model, has and usually know the knowledgeable in the utility model art, can according to actual needs, and elasticity selects the shape of encapsulated layer 130.
Specifically, the material of encapsulated layer 130 is silica gel (Silicone) or epoxy resin (Epoxy Resin).Should be appreciated that, the material of above lifted encapsulated layer 130 is only illustration, and is not used to limit the utility model, has and usually know the knowledgeable in the utility model art, can according to actual needs, and elasticity selects the material of encapsulated layer 130.
When the material of encapsulated layer 130 is silica gel, the material molecules formula of encapsulated layer 130 can be:
(R
4 3SiO
1/2)
a(R
1(R
2)SiO
2/2)
b(R
3SiO
3/2)
c(R
5 xZ
ySiO
(4-x-y)/2)
d
Wherein R
1with R
3for being independently selected from C
6-10aryl and C
7-20alkylaryl, R
2be respectively Phenoxyphenyl, R
4for being independently selected from C
1-10alkyl, C
7-10aryl alkyl, C
7-10alkylaryl and C
6-10aryl, R
5for being independently selected from C
1-10alkyl, C
7-10aryl alkyl, C
7-10alkylaryl, C
6-10aryl and Phenoxyphenyl, Z is for be independently selected from hydroxyl and C
1-10alkoxyl.
In addition, 0≤a≤0.005,0.8495≤b≤0.9995,0.0005≤c≤0.10,0<d≤0.15, x is for be independently selected from 0,1 and 2, y for be independently selected from 1,2 and 3, a+b+c+d=1.
Specifically, the light 20 that the sidewall 122 of self-luminous diode chip for backlight unit 120 penetrates is less than about 5% for reflection grain 140 and the side penetrance of ground floor 131.In other words, the light 20 that the sidewall 122 of self-luminous diode chip for backlight unit 120 penetrates has 95% can be reflected by reflection grain 140 and advance upward, only has 5% can penetrate from the side 132 of ground floor 131.
The light 20 penetrated to make the sidewall 122 of self-luminous diode chip for backlight unit 120 is less than about 5% for reflection grain 140 and the side penetrance of ground floor 131, and the total weight of reflection grain 140 can be about 0.2 to 0.6 with the ratio of the weight of the ground floor 131 except reflection grain 140.Or the total weight of reflection grain 140 can be about 0.4 with the ratio of the weight of the ground floor 131 except reflection grain 140.
In addition, package structure for LED 100 also can comprise multiple fluorescent grain 150.Fluorescent grain 150 is distributed in the second layer 136.Furthermore, fluorescent grain 150 can be uniformly distributed in the second layer 136.When light 10,20 is by the second layer 136, the light 10,20 of part will be converted to conversion light (not illustrating) by fluorescent grain 150, after the end face 101 of light 10,20 and conversion light self-luminous diode package structure 100 penetrate, light 10,20 with change light and will be mixed into and mix light (not illustrating).
By adjusting the ratio of the weight of the material of fluorescent grain 150, the total weight of fluorescent grain 150 and the second layer 136, light 10,20 and the color (or colour temperature) mixing light mixed by conversion light just can be adjusted.
Fig. 3 illustrates the generalized section of the package structure for LED 100 according to another execution mode of the utility model, and its profile position is the line segment 2 along Fig. 1.Show as depicted in fig. 3, the package structure for LED 100 of present embodiment is roughly identical with the package structure for LED 100 of Fig. 2, Main Differences is, ground floor 131 has adjacent to the inboard portion 133 of light-emitting diode chip for backlight unit 120 and the Outboard Sections 134 relative to inboard portion 133, and reflection grain 140 is uniformly distributed in inboard portion 133.In other words, reflection grain 140 is distributed in from the region close to light-emitting diode chip for backlight unit 120.
Fig. 4 illustrates the generalized section of the package structure for LED 100 according to the another execution mode of the utility model.As Fig. 4 illustrate, the package structure for LED 100 of present embodiment is roughly identical with the package structure for LED 100 of Fig. 2, Main Differences is, package structure for LED 100 also comprises reflector 160, and reflector 160 is arranged between substrate 110 and ground floor 131 and is arranged between substrate 110 and light-emitting diode chip for backlight unit 120.
Due to after the light that reflection grain 140 Refl-Luminous diode chip for backlight unit 120 is launched, some light may be advanced downward.Be arranged at the below of ground floor 131 by reflector 160, the light of advancing downward will be reflected by reflector 160, and then changes and advance upward.So, the most of light entering ground floor 131 can be advanced the most at last upward, and penetrated (it should be noted that the light entering ground floor 131 may be reflected more than once by reflection grain 140 herein) by the end face 101 of package structure for LED 100.
The embodiment in above lifted reflector 160 is only illustration, and is not used to limit the utility model, has and usually know the knowledgeable in the utility model art, can according to actual needs, and elasticity selects the embodiment in reflector 160.
Fig. 5 illustrates the generalized section according to the utility model package structure for LED 100 of an execution mode again.Show as shown graphically in fig 5, the package structure for LED 100 of present embodiment is roughly identical with the package structure for LED 100 of Fig. 4, and Main Differences is, core 162 and periphery 164 are divided in reflector 160.Core 162 is arranged between substrate 110 and light-emitting diode chip for backlight unit 120.Periphery 164 is arranged between substrate 110 and ground floor 131.Light-emitting diode chip for backlight unit 120 only contacts with core 162 and does not contact with periphery 164.
Specifically, core 162 is metallic reflector, and periphery 164 is white reflecting layer.So light-emitting diode chip for backlight unit 120 can not produce unnecessary electric connection because of being electrically connected with periphery 164 with other elements.Should be appreciated that, above lifted core 162 is only illustration with the embodiment of periphery 164, and be not used to limit the utility model, have in the utility model art and usually know the knowledgeable, can according to actual needs, elasticity selects the embodiment of core 162 and periphery 164.
Fig. 6 illustrates the generalized section according to the utility model package structure for LED 100 of an execution mode again.As Fig. 6 illustrate, the package structure for LED 100 of present embodiment is roughly identical with the package structure for LED 100 of Fig. 2, and Main Differences is, the shape of encapsulated layer 130 is roughly hemisphere.
By being distributed in ground floor 131 by reflection grain 140, when the light 20 that the sidewall 122 of self-luminous diode chip for backlight unit 120 penetrates is advanced in ground floor 131, the reflection grain 140 that light 20 will be distributed in ground floor 131 reflects.So, also can advance upward after light 20 is reflected, thus light 20 is made to be penetrated by the end face 101 of package structure for LED 100, so the light 20 that the sidewall 122 of self-luminous diode chip for backlight unit 120 penetrates can also be used effectively, and then promote the luminous efficiency of package structure for LED 100.
Although the utility model discloses as above with execution mode; so itself and be not used to limit the utility model; anyly be familiar with this those skilled in the art; not departing from spirit and scope of the present utility model; when being used for a variety of modifications and variations, the scope that therefore protection range of the present utility model ought define depending on appending claims is as the criterion.
Claims (10)
1. a package structure for LED, is characterized in that, comprises:
One substrate;
One light-emitting diode chip for backlight unit, is arranged on this substrate;
One encapsulated layer, wherein this encapsulated layer divides into a ground floor and a second layer, and this ground floor is around the sidewall of this light-emitting diode chip for backlight unit, and this second layer is covered on this light-emitting diode chip for backlight unit and this ground floor; And
Multiple reflection grain, is arranged in this ground floor.
2. package structure for LED according to claim 1, is characterized in that, this light-emitting diode chip for backlight unit has an end face, and the rational height of this ground floor is not higher than this end face.
3. package structure for LED according to claim 1, is characterized in that, described reflection grain is uniformly distributed in this ground floor.
4. package structure for LED according to claim 1, is characterized in that, described reflection grain is distributed in the region close to this light-emitting diode chip for backlight unit.
5. package structure for LED according to claim 1, is characterized in that, the shape of this encapsulated layer is cube.
6. package structure for LED according to claim 1, is characterized in that, the shape of this encapsulated layer is hemisphere.
7. package structure for LED according to claim 1, is characterized in that, the total weight of described reflection grain is 0.2 to 0.6 with the ratio of the weight of this ground floor except described reflection grain.
8. package structure for LED according to claim 1, is characterized in that, the total weight of described reflection grain is 0.4 with the ratio of the weight of this ground floor except described reflection grain.
9. package structure for LED according to claim 1, is characterized in that, the inscribe diameter of a circle of described reflection grain is less than 5 nanometers.
10. package structure for LED according to claim 1, is characterized in that, also comprises:
Multiple fluorescent grain, is distributed in this second layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520271469.9U CN204732448U (en) | 2015-04-29 | 2015-04-29 | Package structure for LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520271469.9U CN204732448U (en) | 2015-04-29 | 2015-04-29 | Package structure for LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204732448U true CN204732448U (en) | 2015-10-28 |
Family
ID=54390778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520271469.9U Active CN204732448U (en) | 2015-04-29 | 2015-04-29 | Package structure for LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204732448U (en) |
-
2015
- 2015-04-29 CN CN201520271469.9U patent/CN204732448U/en active Active
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |