CN204718722U - A kind of pressure transducer - Google Patents
A kind of pressure transducer Download PDFInfo
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- CN204718722U CN204718722U CN201520131337.6U CN201520131337U CN204718722U CN 204718722 U CN204718722 U CN 204718722U CN 201520131337 U CN201520131337 U CN 201520131337U CN 204718722 U CN204718722 U CN 204718722U
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Abstract
A kind of pressure transducer described in the utility model, comprises, for testing pressure being converted to the film assembly of self-deformation; Be formed on described film assembly for providing the magnetic element in magnetic field; For testing pressure being conducted to the pressure inlets of described film assembly; For detecting described changes of magnetic field and the signal of described changes of magnetic field being converted to the magnetic field sensor of electric signal.During work, testing pressure inputs from described pressure inlets, and testing pressure is conducted to described film assembly, and testing pressure is converted to self-deformation by described film assembly; Being arranged on the magnetic element on described film assembly along with the deformation generation magnetic flux intensity of described film assembly changes.Described magnetic field sensor detects described flux change signal and is converted to electric signal and exports.Described pressure sensor structure is simple, and without the need to semiconductor packaging process, process costs is low, yields is high, is applicable to large-scale commercial production.
Description
Technical field
The utility model relates to sensor field, particularly relates to a kind of pressure transducer based on magnetic principle.
Background technology
Pressure transducer is a kind of sensor commonly used the most, and it is widely used in various industrial automatic control environment, relates to the various fields such as automobile, mechanical industry, robotization, household electrical appliances.
Pressure transducer of a great variety, as resistance strain gage pressure transducer, semiconductor gauge pressure transducer, piezoresistive pressure sensor, inductance pressure transducer, capacitance pressure transducer, etc.Wherein, piezoresistive pressure sensor has the advantage that precision is high, linear characteristic is good, is most widely used.
Piezoresistive pressure sensor is mainly the silicon resistance pressure transducer based on MEMS principle, silicon resistance pressure transducer utilizes the piezoresistive effect of monocrystalline silicon to make, the semiconductor resistor that diffusion 4 is equivalent on silicon diaphragm specific direction, and connect into Wheatstone bridge.When diaphragm is subject to ambient pressure effect, during electric bridge out of trim, if add excitation power supply (constant current and constant voltage) to electric bridge, just can obtain the output voltage be directly proportional to by measuring pressure, thus reach the object measuring pressure.
But the silicon resistance pressure chip in silicon resistance pressure transducer is directly exposed to by under measuring pressure media, this just determines the pressure that silicon resistance pressure is only suitable for measuring non-corrosive dry gas under normal circumstances, and application is narrow.In order to broaden application scope, when detecting corrosive gas, whole silicon needs coating one deck protection glue-line; When measuring fluid pressure, coating protecting glue is inoperative, at pressure chamber filling silicon oil, and need encapsulate diaphragm at inlet end, thus make to be delivered on silicon by diaphragm and silicone oil by measuring pressure.Above-mentioned improvement significantly increases the complexity of pressure transducer, and technology difficulty is large, yields is low, manufacturing cost is high.
Even so, silicon resistance pressure chip needs to be bonded on the substrate that temperature coefficient mates completely, and flies to lead terminal by line, and this all needs the professional device of semiconductor packages, invests huge, causes the cost of single-sensor higher.Meanwhile, because the immanent structure of sensors with auxiliary electrode is complicated, also there is the problem that reliability is lower.
Utility model content
For this reason, the problem that to be solved in the utility model is existing piezoresistive pressure sensor complex structure, cost is high, reliability is low, thus provide that a kind of structure is simple, cost is low and accurate pressure transducer reliably.
For solving the problems of the technologies described above, the technical solution adopted in the utility model is as follows:
A kind of pressure transducer described in the utility model, comprising:
Film assembly, for being converted to self-deformation by testing pressure;
Magnetic element, is arranged on described film assembly, for providing magnetic field;
Pressure inlets, for conducting to described film assembly by testing pressure;
Magnetic field sensor, for detecting described changes of magnetic field, and is converted to electric signal by the signal of described changes of magnetic field.
Described pressure transducer also comprises housing, and described housing has an opening, forms airtight cavity with fastening described film assembly over said opening; Described magnetic element and described magnetic field sensor are arranged in described cavity; Described pressure inlets is arranged on the outside of described cavity.
Described pressure transducer also comprises chip, and described chip is arranged in described cavity, for the treatment of the described electric signal that described magnetic field sensor exports, exports the testing pressure value at described pressure inlets place.
Described magnetic field sensor is the one in Hall element, anisotropic magnetoresistance (AMR) sensor, giant magnetoresistance effect (GMR) sensor, tunnel magneto effect (TMR) sensor.
Described magnetic element is be formed directly into the magnetic film on described film assembly.
The thickness of described magnetic film is 10nm ~ 1mm.
Described magnetic element is arranged on described film assembly by Flexible Connector.
The elastic modulus of described film assembly is 0.01GPa ~ 200GPa.
Described pressure transducer also comprises the temperature sensor be arranged in described cavity, is converted to electric signal transmission to described chip for the temperature that detects in described cavity.
Described chip is programmable chip.
Technique scheme of the present utility model has the following advantages compared to existing technology:
1, a kind of pressure transducer described in the utility model, comprises, for testing pressure being converted to the film assembly of self-deformation; Be formed on described film assembly for providing the magnetic element in magnetic field; For testing pressure being conducted to the pressure inlets of described film assembly; For detecting described changes of magnetic field and the signal of described changes of magnetic field being converted to the magnetic field sensor of electric signal.
During work, testing pressure inputs from described pressure inlets, and testing pressure is conducted to described film assembly, and testing pressure is converted to self-deformation by described film assembly; Being arranged on the magnetic element on described film assembly along with the deformation generation magnetic flux intensity of described film assembly changes.Described magnetic field sensor detects described flux change signal and is converted to electric signal and exports.Described pressure sensor structure is simple, and without the need to semiconductor packaging process, process costs is low, yields is high, is applicable to large-scale commercial production.
2, a kind of pressure transducer described in the utility model also comprises housing, described housing has an opening, form airtight cavity with fastening described film assembly over said opening, magnetic element and magnetic field sensor are arranged in described cavity, and pressure inlets is arranged on the outside of described cavity.Due to the pressure media of testing pressure and described pressure transducer and chip completely isolated by described housing and described film assembly, the work of described pressure transducer by the impact of external pressure media, application extensively, reliable operation.
3, a kind of pressure transducer described in the utility model, the induction direction of magnetic field sensor is wherein not parallel with the pole orientation of magnetic element wherein, and described magnetic field sensor can in the change detecting lines of magnetic induction to greatest extent, highly sensitive.
4, a kind of pressure transducer described in the utility model, also comprise the temperature sensor be arranged in described cavity, electric signal transmission is converted to described chip for the temperature that detects in described cavity, to eliminate the error that the nonlinearity erron that causes due to temperature variation and performance cause with the drift of temperature, thus effectively increase the operating accuracy of described pressure transducer.
5, the chip adopted in a kind of pressure transducer described in the utility model is programmable chip, after described pressure transducer general assembly completes, the error that the nonlinearity erron eliminating and cause due to structural failure, magnetic circuit error and temperature variation and performance cause with the drift of temperature is set by programming, thus described pressure transducer accurately can be worked under any service condition.
6, a kind of pressure transducer described in the utility model, preferred acrylonitrile-butadiene-styrene copolymer composite metal fiber film is as film assembly, not only there is high chemical stability and extremely wide thermal adaptability, most of pressure media can be tolerated, applied widely; And, acrylonitrile-butadiene-styrene copolymer composite metal fiber film has extremely strong shock resistance, pliability is good, remarkable deformation can be there is under effect of stress, can restore to the original state rapidly again after stress relaxation, pressure sensitive is highly sensitive, thus can improve the precision of described pressure transducer.
Accompanying drawing explanation
In order to make content of the present utility model be more likely to be clearly understood, below according to specific embodiment of the utility model also by reference to the accompanying drawings, the utility model is described in further detail, wherein
Fig. 1 is the pressure transducer cut-open view described in the utility model embodiment;
Fig. 2 is the pressure transducer cut-open view described in another embodiment of the utility model;
In figure, Reference numeral is expressed as: 1-housing, 2-film assembly, 3-magnetic element, 4-pressure inlets, 5-magnetic field sensor, 6-chip, 7-Flexible Connector.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearly, below in conjunction with accompanying drawing, embodiment of the present utility model is described in further detail.
The utility model can be implemented in many different forms, and should not be understood to be limited to embodiment set forth herein.On the contrary, provide these embodiments, make the disclosure to be thorough and complete, and design of the present utility model fully will be conveyed to those skilled in the art, the utility model will only be limited by claim.In the accompanying drawings, for clarity, the size of element or assembly and relative size can be exaggerated.Should be understood that, when element be referred to as " being formed in " or " being arranged on " another element " on " time, this element can be set directly on another element described, or also can there is intermediary element.On the contrary, when element is referred to as on " being formed directly into " or " being set directly at " another element, there is not intermediary element.
As a specific embodiment of the present utility model, a kind of pressure transducer as shown in Figure 1, comprises, and has the housing 1 of an opening, over said opening fastening, forms the film assembly 2 of airtight cavity with described housing 1; Be formed in the magnetic element 3 of described film assembly 2 near described cavity side, for providing magnetic field; Be arranged on described housing 1 or described film assembly 2 pressure inlets 4 away from described cavity side, for testing pressure being conducted to described film assembly 2; Being arranged on the magnetic field sensor 5 in described cavity, for detecting described changes of magnetic field, and the signal of described changes of magnetic field being converted to electric signal; Be arranged on the chip 6 in described cavity, for the treatment of the described electric signal that described magnetic field sensor 5 exports, export the testing pressure value at described pressure inlets 4 place.
In the present embodiment, as shown in Figure 1, described magnetic element 3, can the deformation of accurate film assembly 2 described in perception observantly for being formed directly into the magnetic film on described film assembly 2, thus produce uniform changes of magnetic field, and then effectively improve the measuring accuracy of described pressure transducer.As convertible embodiment of the present utility model; as shown in Figure 2, described magnetic element 3 can also be the magnet of arbitrary shape, is arranged on described film assembly 2 by Flexible Connector 7; all can realize the purpose of this utility model, belong to protection domain of the present utility model.
During work, testing pressure inputs from described pressure inlets 4, and testing pressure is conducted to described film assembly 2, and testing pressure is converted to self-deformation by described film assembly 2; Be set directly at magnetic element 3 on described film assembly 2 or be arranged on the magnetic element 3 on described film assembly 2 along with the deformation generation magnetic flux intensity of described film assembly 2 by Flexible Connector 7 and change.Described magnetic field sensor 5 detects described flux change signal and is converted into electric signal transmission to described chip 6, and the electric signal of input processes by described chip 6, exports the testing pressure value at described pressure inlets 4 place.Described pressure sensor structure is simple, process costs is low, yields is high, is applicable to large-scale commercial production.Meanwhile, because described pressure sensor structure is simple, without the need to semiconductor packaging process, process costs is low, thus easily realize miniaturization, applied widely.
Described magnetic element 3 is arranged in described cavity with described magnetic field sensor 5, and described pressure inlets 4 is arranged on the outside of described cavity.Due to testing pressure pressure media (as tested gas or liquid) with as described in pressure transducer 5 and chip 6 by as described in housing 1 with as described in film assembly 2 completely isolated, so the work of described pressure transducer 5 and chip 6 is not by the impact of external pressure media, application is wide, reliable operation.Described magnetic field sensor 5 is the one in Hall element, anisotropic magnetoresistance (AMR) sensor, giant magnetoresistance effect (GMR) sensor, tunnel magneto effect (TMR) sensor, the magnetic susceptibility of TMR sensor is the highest, GMR sensor takes second place, AMR sensor third, Hall element is minimum, four have different temperatures coefficient respectively, magnetic chip can be mated in actual applications, to ensure to obtain the most stable output in-40 DEG C ~ 180 DEG C in temperature range according to the material of magnetic element 3.In the present embodiment, described magnetic field sensor 5 is preferably AMR sensor.
Described magnetic element 3 calculates to guarantee that microdeformation can produce the magnetic field of even variation at magnetic field sensor 5 place through Optimized Simulated.Calculated by Optimized Simulated, can make the output of magnetic field sensor 5 completely with tested proportional pressure, and high/low temperature can be compensated to greatest extent on the impact exported.Preferably, the output voltage of testing pressure and described magnetic field sensor 5 meets:
V＝K’·(E·ΔR/R)/P
The magnetic resistance value that V is the output voltage of described magnetic field sensor 5, K ' is conversion coefficient, E is driving voltage, R is magnetic field sensor 5, Δ R for relative magnetic field change the change of the magnetic resistance value produced, P is testing pressure value.
As convertible embodiment of the present utility model, material and the described magnetic field sensor 5 of the magnetic element 3 matched can be selected according to above formula, all can realize the purpose of this utility model, belong to protection domain of the present utility model.
The induction direction of described magnetic field sensor 5 and the pole orientation of described magnetic element 3 not parallel, the pole orientation that the present embodiment is preferably the induction direction of described magnetic field sensor 5 and described magnetic element 3 is orthogonal, described magnetic field sensor 5 can in the change detecting lines of magnetic induction to greatest extent, highly sensitive, the linearity is good.
In the present embodiment, described magnetic element 3 is located at the magnetic film on described film assembly 2 preferably by sputtering technology direct plating, and the magnetic field intensity of described magnetic element 3 is 10 Gauss ~ 100 Gausses.Can select according to the embody rule environment of pressure transducer, if around electromagnetic interference (EMI) is strong, highfield can be selected as close to 1000 Gausses, exempt the impact of interference on sensor accuracy; If applied environment is without electromagnetic interference (EMI), the field intensity of 10 Gausses can be selected, the cost of the material that deperms.Its material is selected from but is not limited to the hard magnetic materials such as neodymium iron boron, SmCo, aluminium nickel cobalt, ferrite.
As preferred embodiment of the present utility model, described magnetic element 3 for thickness be the neodymium iron boron magnetic film of 0.1mm, its magnetic field intensity is 20 Gausses, for measuring little pressure limit, as 500Pa.
In the present embodiment, described film assembly 2 is acrylonitrile-butadiene-styrene copolymer composite metal fiber film, and thickness is 0.3mm, and elastic modulus is 0.2GPa.Preferred described acrylonitrile-butadiene-styrene copolymer composite metal fiber film, as described film assembly 2, not only has high chemical stability and extremely wide thermal adaptability, can tolerate most of pressure media, applied widely; And acrylonitrile-butadiene-styrene copolymer composite metal fiber film has extremely strong shock resistance, pliability is good, under effect of stress, remarkable deformation can occur, and can restore to the original state rapidly again after stress relaxation, pressure sensitive is highly sensitive.On this basis, coordinate and be directly fitted on described film assembly 2, thickness is the magnetic film body 3 of 10nm ~ 1mm, guarantees to produce uniform changes of magnetic field, improves the precision of described pressure transducer.
As convertible embodiment of the present utility model; described film assembly 2 can also be selected according to by measuring pressure size; be 0.01GPa ~ 200GPa for measuring large pressure limit (as 500 MPas) optional elastic modulus; thickness is the film body of 1.5mm; be selected from but be not limited to acrylonitrile-butadiene-styrene copolymer compound substance; all can realize the purpose of this utility model, belong to protection domain of the present utility model.
As preferred embodiment of the present utility model, described pressure transducer also comprises the temperature sensor be arranged in described cavity, is converted to electric signal transmission to described chip 6 for the temperature that detects in described cavity.
Described chip 6 is programmable chip, after described pressure transducer general assembly completes, the error that the nonlinearity erron eliminating and cause due to structural failure, magnetic circuit error and temperature variation and performance cause with the drift of temperature is set by programming, thus described pressure transducer accurately can be worked under any service condition.
As convertible embodiment of the present utility model; described magnetic field sensor 5 and described chip 6 can also be integrated in volume and the manufacturing cost that not only can reduce described pressure transducer in same SOC (English full name is: System-on-a-Chip); measuring accuracy and the reliability of described pressure transducer can also be improved; all can realize the purpose of this utility model, belong to protection domain of the present utility model.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all embodiments.And thus the apparent change of extending out or variation be still among protection domain of the present utility model.
Claims (10)
1. a pressure transducer, is characterized in that, comprising:
Film assembly (2), for being converted to self-deformation by testing pressure;
Magnetic element (3), is arranged on described film assembly (2), for providing magnetic field;
Pressure inlets (4), for conducting to described film assembly (2) by testing pressure;
Magnetic field sensor (5), for detecting described changes of magnetic field, and is converted to electric signal by the signal of described changes of magnetic field.
2. pressure transducer according to claim 1, is characterized in that, also comprises housing (1), and described housing (1) has an opening, forms airtight cavity with fastening described film assembly (2) over said opening; Described magnetic element (3) and described magnetic field sensor (5) are arranged in described cavity; Described pressure inlets (4) is arranged on the outside of described cavity.
3. pressure transducer according to claim 2, it is characterized in that, also comprise chip (6), described chip (6) is arranged in described cavity, for the treatment of the described electric signal that described magnetic field sensor (5) exports, export the testing pressure value at described pressure inlets (4) place.
4. pressure transducer according to claim 3, it is characterized in that, described magnetic field sensor (5) is Hall element, one in anisotropic magnetoresistance (AMR) sensor, giant magnetoresistance effect (GMR) sensor, tunnel magneto effect (TMR) sensor.
5. pressure transducer according to claim 4, is characterized in that, described magnetic element (3) is for being formed directly into the magnetic film on described film assembly (2).
6. pressure transducer according to claim 5, is characterized in that, the thickness of described magnetic film is 10nm ~ 1mm.
7. pressure transducer according to claim 4, is characterized in that, described magnetic element (3) is arranged on described film assembly (2) by Flexible Connector.
8. the pressure transducer according to any one of claim 4-7, is characterized in that, the elastic modulus of described film assembly (2) is 0.01GPa ~ 200GPa.
9. pressure transducer according to claim 8, is characterized in that, described pressure transducer also comprises the temperature sensor be arranged in described cavity, is converted to electric signal transmission to described chip (6) for the temperature that detects in described cavity.
10. pressure transducer according to claim 9, is characterized in that, described chip (6) is programmable chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520131337.6U CN204718722U (en) | 2015-03-09 | 2015-03-09 | A kind of pressure transducer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520131337.6U CN204718722U (en) | 2015-03-09 | 2015-03-09 | A kind of pressure transducer |
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| CN204718722U true CN204718722U (en) | 2015-10-21 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109846094A (en) * | 2019-03-08 | 2019-06-07 | 深圳市新宜康科技股份有限公司 | Inhalator generator and its control method based on magnetoresistive sensor |
| CN114924419A (en) * | 2022-06-15 | 2022-08-19 | 业成科技（成都）有限公司 | Angle adjusting device, head-up display and vehicle |
-
2015
- 2015-03-09 CN CN201520131337.6U patent/CN204718722U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109846094A (en) * | 2019-03-08 | 2019-06-07 | 深圳市新宜康科技股份有限公司 | Inhalator generator and its control method based on magnetoresistive sensor |
| CN114924419A (en) * | 2022-06-15 | 2022-08-19 | 业成科技（成都）有限公司 | Angle adjusting device, head-up display and vehicle |
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Effective date of registration: 20180402 Address after: 215600 A 305 room A building center of Zhangjiagang Free Trade Zone, Suzhou Free Trade Zone, Jiangsu Patentee after: Suzhou colt Control Technology Co. Address before: 215600 Zhangjiagang free trade zone sensor Industrial Park in Jiangsu Patentee before: Suzhou cent gram observation and control technology company limited |