CN204668279U - The removal device of borosilicate phase glassy layer after the diffusion of voltage-stabiliser tube boron - Google Patents

The removal device of borosilicate phase glassy layer after the diffusion of voltage-stabiliser tube boron Download PDF

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Publication number
CN204668279U
CN204668279U CN201520441104.6U CN201520441104U CN204668279U CN 204668279 U CN204668279 U CN 204668279U CN 201520441104 U CN201520441104 U CN 201520441104U CN 204668279 U CN204668279 U CN 204668279U
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silicon chip
cuso
voltage
saturated solution
stabiliser tube
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CN201520441104.6U
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Chinese (zh)
Inventor
李志福
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CHAOYANG RADIO COMPONENTS Co Ltd
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CHAOYANG RADIO COMPONENTS Co Ltd
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Abstract

The utility model relates to the removal device of the rear borosilicate phase glassy layer of a kind of voltage-stabiliser tube boron diffusion, is provided with quartz container, fills CuSO in described quartz container 4saturated solution, described CuSO 4be placed with a silicon chip in saturated solution, described silicon chip is connected with the positive pole of DC power supply by wire, and the negative pole of described DC power supply is by wire and CuSO 4electrode in saturated solution is connected.The utility model has simple, easy to operate, effective fast, can realize, can ensure the demand of highly reliable device under room temperature ventilated environment, avoids because the removal of silicon chip surface borosilicate phase glass does not totally cause scrapping of silicon chip simultaneously.

Description

The removal device of borosilicate phase glassy layer after the diffusion of voltage-stabiliser tube boron
Technical field
The utility model belongs to a kind of electronic component producing device, the removal device of the borosilicate phase glassy layer particularly produced after a kind of silica-based voltage-stabiliser tube chip boron diffusion.
Background technology
The minimizing technology of borosilicate phase glassy layer after the diffusion of voltage-stabiliser tube boron, be specially voltage-stabiliser tube and carry out silicon chip surface in boron diffusion process and produce borosilicate phase glassy layer in pyroprocess, this layer is do not wish to exist in voltage-stabiliser tube chip structure, must be removed.Common minimizing technology uses the rinsing of HF solution to remove, or after first carrying out thermal oxidation, re-use HF solution rinsing removal, but removal effect is not very desirable sometimes, can exist and remove halfway phenomenon, particularly due to environment or human factor, cause this borosilicate phase glass moisture absorption, this layer of borosilicate phase glassy layer will be difficult to remove.The principle of this employing electrolysis, decomposed by borosilicate phase glass electrochemical, to reach the object of removal, and removal effect is ideal, does not remain completely.
Utility model content
The purpose of this utility model is to solve the problem, the removal device of the rear borosilicate phase glassy layer of a kind of voltage-stabiliser tube boron diffusion is proposed, after the diffusion of this voltage-stabiliser tube boron, the removal device of borosilicate phase glassy layer has simple, easy to operate, effective fast, can realize under room temperature ventilated environment, the demand of highly reliable device can be ensured, avoid because the removal of silicon chip surface borosilicate phase glass does not totally cause scrapping of silicon chip simultaneously.
The purpose of this utility model is achieved through the following technical solutions: the removal device of borosilicate phase glassy layer after the diffusion of voltage-stabiliser tube boron, is provided with quartz container, it is characterized in that: fill CuSO in described quartz container 4saturated solution, described CuSO 4be placed with a silicon chip in saturated solution, described silicon chip is connected with the positive pole of DC power supply by wire, and the negative pole of described DC power supply is by wire and CuSO 4electrode in saturated solution is connected.
The beneficial effects of the utility model: voltage-stabiliser tube silicon wafer surface can be realized at the borosilicate phase glass carrying out producing in all kinds of boron diffusion process under room temperature, ventilated environment, avoid because the product reliability reduction thoroughly do not brought removed by borosilicate phase glass, even early failure.The method can simplify and shorten traditional borosilicate phase glass minimizing technology greatly, avoids the consumption of HF solution to oxide layer.The technical process that thermal oxidation process removes borosilicate phase glass can be saved, avoid the impact of thermal oxidation process on product parameters.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
Below in conjunction with drawings and Examples, the utility model is further described:
Embodiment: see accompanying drawing 1, after the diffusion of voltage-stabiliser tube boron, the removal device of borosilicate phase glassy layer, is provided with quartz container 6, fills CuSO in described quartz container 4saturated solution 5, described CuSO 4be placed with a silicon chip 4 in saturated solution, described silicon chip is connected with the positive pole of DC power supply 1 by wire, and the negative pole of described DC power supply is by wire 2 and CuSO 4electrode 3 in saturated solution is connected.
Select the current/voltage adjustable DC current source of maximum current 1A, maximum voltage 100V, anode use wire draw be connected to wait load silicon chip device on, negative electrode uses wire extraction to be connected to a front end can be parallel with silicon chip, on the electrode assembly that can scan silicon chip surface.
Second step is CuSO 4saturated solution is prepared: use balance to take 100 grams of CuSO 4powder is poured in quartz container, uses measuring cup to measure 500ml water and pours in quartz container, and use quartz pushrod fully to stir, and can use after leaving standstill 2 hours.
3rd step is that borosilicate phase glass is removed; By voltage-stabiliser tube silicon slice loading on the device be connected with power anode, and be placed in CuSO 4in saturated solution, open DC current source, regulate current source voltage at about 30V, use the scan electrode device be connected with negative electrode to carry out contactless scanning wiping to silicon chip, during scanning, observe the electric current of DC power supply, its electric current is shown as 400 ~ 500mA for best, silicon chip surface observation in scanning process, obviously can observe borosilicate phase glass and be removed, and removes clean rear power supply of closing DC current source, take off silicon chip, can carry out the following process such as cleaning according to silicon chip normal flow.
Last it is noted that obviously, above-described embodiment is only for the utility model example is clearly described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among protection range of the present utility model.

Claims (1)

1. a removal device for the rear borosilicate phase glassy layer of voltage-stabiliser tube boron diffusion, is provided with quartz container (6), it is characterized in that: fill CuSO in described quartz container 4saturated solution (5), described CuSO 4be placed with a silicon chip (4) in saturated solution, described silicon chip is connected with the positive pole of DC power supply (1) by wire, and the negative pole of described DC power supply is by wire (2) and CuSO 4electrode (3) in saturated solution is connected.
CN201520441104.6U 2015-06-25 2015-06-25 The removal device of borosilicate phase glassy layer after the diffusion of voltage-stabiliser tube boron Active CN204668279U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520441104.6U CN204668279U (en) 2015-06-25 2015-06-25 The removal device of borosilicate phase glassy layer after the diffusion of voltage-stabiliser tube boron

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520441104.6U CN204668279U (en) 2015-06-25 2015-06-25 The removal device of borosilicate phase glassy layer after the diffusion of voltage-stabiliser tube boron

Publications (1)

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CN204668279U true CN204668279U (en) 2015-09-23

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109360784A (en) * 2018-09-13 2019-02-19 安徽钜芯半导体科技有限公司 A method of removal chip surface Pyrex

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109360784A (en) * 2018-09-13 2019-02-19 安徽钜芯半导体科技有限公司 A method of removal chip surface Pyrex

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Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CP03 Change of name, title or address

Address after: 122000 105, section 5, Wenhua Road, Longcheng District, Chaoyang City, Liaoning Province

Patentee after: Chaoyang Microelectronics Technology Co., Ltd

Address before: 122000 No. two, section 75, Chaoyang City, Liaoning, Xinhua Road

Patentee before: CHAOYANG RADIO COMPONENTS Co.,Ltd.

CP03 Change of name, title or address