CN204661823U - Cvd diamond coating apparatus - Google Patents
Cvd diamond coating apparatus Download PDFInfo
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- CN204661823U CN204661823U CN201520314102.0U CN201520314102U CN204661823U CN 204661823 U CN204661823 U CN 204661823U CN 201520314102 U CN201520314102 U CN 201520314102U CN 204661823 U CN204661823 U CN 204661823U
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- plated film
- substrate frame
- vacuum pump
- coating apparatus
- cvd diamond
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Abstract
The utility model belongs to filming equipment technical field, in particular to a kind of cvd diamond coating apparatus, comprise vacuum pump, plated film casing and substrate frame, described vacuum pump is communicated with described plated film casing, described plated film casing has plated film chamber, described substrate frame is arranged in described plated film chamber, is respectively arranged with electrode molybdenum frame in the both sides of described substrate frame, is connected with tantalum wire between two described electrode molybdenum framves.Substrate frame is laid the sample needing plated film, then by vacuum pump by plated film chamber pumping to vacuum state, then reactant gases methane and nitrogen is passed into, recycling tantalum wire carbonization post-heating produces high temperature and hydrogen cracking is ionized into hydrogen atom and plasma body, protium in methane is peeled off the carbon being formed and have activity chemistry key in a large number by hydrogen atom plasma body again, carbon carbon is connected to form diamond, finally makes coated with CVD (chemical vapor deposition) diamond on sample.The long product lifecycle that the utility model structure is simple, coating result is desirable, coated.
Description
Technical field
The utility model belongs to filming equipment technical field, particularly a kind of cvd diamond coating apparatus.
Background technology
Chemical vapour deposition (CVD) is the technology being used for depositing multiple materials be most widely used in semi-conductor industry, comprises large-scale insulating material, most metals material and metal alloy compositions.In theory, it is very simple: two or more gaseous starting materials imports in a reaction chamber, and then they each other chemical reaction occur, and forms a kind of new material, deposits in wafer surface.
And the structure of the cvd diamond coating apparatus of prior art is more complicated, coating result is undesirable, the product of coating is short for work-ing life.
Utility model content
The purpose of this utility model is: for the deficiencies in the prior art, and provides the cvd diamond coating apparatus of the long product lifecycle that a kind of structure is simple, coating result is desirable, coated.
For achieving the above object, the technical solution of the utility model is:
Cvd diamond coating apparatus, comprise vacuum pump, plated film casing and substrate frame, described vacuum pump is communicated with described plated film casing, described plated film casing has plated film chamber, described substrate frame is arranged in described plated film chamber, be respectively arranged with electrode molybdenum frame in the both sides of described substrate frame, between two described electrode molybdenum framves, be connected with tantalum wire.
One as cvd diamond coating apparatus described in the utility model is improved, and described substrate frame comprises chip bench and main shaft, and the output terminal of described main shaft connects described chip bench.
One as cvd diamond coating apparatus described in the utility model is improved, the tantalum wire fixed link that each described electrode molybdenum frame comprises battery lead rod and is connected with described battery lead rod.
One as cvd diamond coating apparatus described in the utility model is improved, and described vacuum pump is communicated with described plated film casing by pump-line.
One as cvd diamond coating apparatus described in the utility model is improved, and described plated film casing is connected with intake ducting.
The beneficial effects of the utility model are: the utility model comprises vacuum pump, plated film casing and substrate frame, described vacuum pump is communicated with described plated film casing, described plated film casing has plated film chamber, described substrate frame is arranged in described plated film chamber, be respectively arranged with electrode molybdenum frame in the both sides of described substrate frame, between two described electrode molybdenum framves, be connected with tantalum wire.Substrate frame is laid the sample needing plated film, then by vacuum pump by plated film chamber pumping to vacuum state, then reactant gases methane and hydrogen is passed into, recycling tantalum wire carbonization post-heating produces high temperature and hydrogen cracking is ionized into hydrogen atom and plasma body, protium in methane is peeled off the carbon being formed and have activity chemistry key in a large number by hydrogen atom plasma body again, carbon carbon is connected to form diamond, finally makes coated with CVD (chemical vapor deposition) diamond on sample.The long product lifecycle that the utility model structure is simple, coating result is desirable, coated.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
Below in conjunction with embodiment and Figure of description, the utility model is described in further detail, but embodiment of the present utility model is not limited thereto.
As shown in Figure 1, cvd diamond coating apparatus, comprise vacuum pump 1, plated film casing 2 and substrate frame, vacuum pump 1 is communicated with plated film casing 2, plated film casing 2 has plated film chamber 3, substrate frame 4 is arranged in plated film chamber 3, electrode molybdenum frame 5 is respectively arranged with in the both sides of substrate frame 4, tantalum wire 6 is connected with between two electrode molybdenum framves 5, the quantity of tantalum wire 6 is set to two, and two tantalum wires 6 be arranged in parallel, and sample 7 is placed between two parallel tantalum wires 6, certainly, the quantity of tantalum wire 6 is also set to many according to different demands.The tantalum wire fixed link 52 that each electrode molybdenum frame 5 comprises battery lead rod 51 and is connected with battery lead rod 51, tantalum wire 6 is fixed by tantalum wire fixed link 52, battery lead rod 51 tie cable, for tantalum wire 6 provides power supply, tantalum wire 6 is generated heat and carries out carbonization.
Preferably, substrate frame 4 comprises chip bench 41 and main shaft 42, and the output terminal of main shaft 42 connects chip bench 41.After sample 7 is placed in chip bench 41, then drive chip bench 41 to rotate by main shaft 42, make like this that sample 7 applies evenly, enhance coating effect.
Preferably, vacuum pump 1 is communicated with plated film casing 2 by pump-line 8, and when vacuum pump 1 pair of plated film chamber 3 vacuumizes, the gas in plated film chamber 3 is discharged by pump-line 8.
Preferably, plated film casing 2 is connected with intake ducting 21, and intake ducting 21 is mainly used in inputting methane and hydrogen, makes plated film chamber 3 be full of reactant gases, plated film can be carried out in order effectively.
Use the utility model to the working process that cutter carries out plated film is:
A, cobalt pre-treatment is gone to processed cutter: Wimet (main component WC+Co) is in the fabrication process using cobalt metal (Co) as the binding agent of WC particle, but in diamond growth process, cobalt metal often plays side effect, because cobalt metal can promote growth of graphite, suppress adamantine growth, the existence of cobalt is totally unfavorable to diamond film, so before growing diamond, must do pre-treatment, the cobalt by top layer removes;
The carbonization of B, tantalum wire: tantalum wire provides temperature as heater strip, when high temperature (more than 2000 degrees Celsius), surface slowly evaporates tantalum steam, cause polluting diamond, make diamond impure, so want to grow high-quality diamond, carbonizing treatment must be done to tantalum wire, the tantalum wire fusing point after carbonization is higher, heating efficiency is higher, work-ing life is also higher;
C, deposited coatings: complete above after two steps (going cobalt and carbonization), processed cutter, temperature, gas etc. have all possessed, and start deposition growing diamond, maintain the temperature in certain limit, through reasonable time deposition growing, make the thickness that diamond coatings reaches certain;
D, cooling: complete adamantine deposition growing, namely starting cooling, because diamond coatings thermal stresses is larger, for making rete not ftracture, not falling film, must slow cooling.
The announcement of book and instruction according to the above description, the utility model those skilled in the art can also change above-mentioned embodiment and revise.Therefore, the utility model is not limited to above-mentioned embodiment, and any apparent improvement of every those skilled in the art done by basis of the present utility model, replacement or modification all belong to protection domain of the present utility model.In addition, although employ some specific terms in this specification sheets, these terms just for convenience of description, do not form any restriction to the utility model.
Claims (5)
1.CVD diamond coatings equipment, it is characterized in that: comprise vacuum pump, plated film casing and substrate frame, described vacuum pump is communicated with described plated film casing, described plated film casing has plated film chamber, described substrate frame is arranged in described plated film chamber, be respectively arranged with electrode molybdenum frame in the both sides of described substrate frame, between two described electrode molybdenum framves, be connected with tantalum wire.
2. cvd diamond coating apparatus according to claim 1, is characterized in that: described substrate frame comprises chip bench and main shaft, the output terminal of described main shaft connects described chip bench.
3. cvd diamond coating apparatus according to claim 1, is characterized in that: the tantalum wire fixed link that each described electrode molybdenum frame comprises battery lead rod and is connected with described battery lead rod.
4. cvd diamond coating apparatus according to claim 1, is characterized in that: described vacuum pump is communicated with described plated film casing by pump-line.
5. cvd diamond coating apparatus according to claim 1, is characterized in that: described plated film casing is connected with intake ducting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520314102.0U CN204661823U (en) | 2015-05-15 | 2015-05-15 | Cvd diamond coating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520314102.0U CN204661823U (en) | 2015-05-15 | 2015-05-15 | Cvd diamond coating apparatus |
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| Publication Number | Publication Date |
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| CN204661823U true CN204661823U (en) | 2015-09-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201520314102.0U Active CN204661823U (en) | 2015-05-15 | 2015-05-15 | Cvd diamond coating apparatus |
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| CN (1) | CN204661823U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108396308A (en) * | 2018-05-03 | 2018-08-14 | 广东鼎泰高科精工科技有限公司 | A kind of cvd diamond coating apparatus with multiple hot-wire devices |
-
2015
- 2015-05-15 CN CN201520314102.0U patent/CN204661823U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108396308A (en) * | 2018-05-03 | 2018-08-14 | 广东鼎泰高科精工科技有限公司 | A kind of cvd diamond coating apparatus with multiple hot-wire devices |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170123 Address after: 523000 Guangdong city of Dongguan province Houjie Town Chiling Village Industrial Zone a cross road No. 12 Patentee after: Guangdong Tai Tai Precision Tool Technology Co., Ltd. Address before: 523000 Guangdong city of Dongguan province Houjie Town Chiling Village Industrial Zone a cross road No. 13 eight Patentee before: DONGGUAN RUIDING NANO TECHNOLOGY CO., LTD. |
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| CP01 | Change in the name or title of a patent holder |
Address after: 523000 Guangdong city of Dongguan province Houjie Town Chiling Village Industrial Zone a cross road No. 12 Patentee after: Guangdong Ding hi tech Seiko technology Co., Ltd. Address before: 523000 Guangdong city of Dongguan province Houjie Town Chiling Village Industrial Zone a cross road No. 12 Patentee before: Guangdong Tai Tai Precision Tool Technology Co., Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 523000, No. 12, Heng Nan Road, Houjie village, Houjie Town, Houjie Town, Guangdong, Dongguan Patentee after: Guangdong Dingtai Hi Tech Co., Ltd Address before: 523000, No. 12, Heng Nan Road, Houjie village, Houjie Town, Houjie Town, Guangdong, Dongguan Patentee before: GUANGDONG DINGTAI HI-TECH PRECISION TECHNOLOGY Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder |