CN204522964U - Normal temperature directly prepares the device of gallium trichloride-tetrahydrofuran solution - Google Patents
Normal temperature directly prepares the device of gallium trichloride-tetrahydrofuran solution Download PDFInfo
- Publication number
- CN204522964U CN204522964U CN201520006961.3U CN201520006961U CN204522964U CN 204522964 U CN204522964 U CN 204522964U CN 201520006961 U CN201520006961 U CN 201520006961U CN 204522964 U CN204522964 U CN 204522964U
- Authority
- CN
- China
- Prior art keywords
- gallium trichloride
- retort
- tetrahydrofuran solution
- gallium
- normal temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 29
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 26
- BNFYTKXERRXJNP-UHFFFAOYSA-N oxolane;trihydrochloride Chemical compound Cl.Cl.Cl.C1CCOC1 BNFYTKXERRXJNP-UHFFFAOYSA-N 0.000 title claims abstract description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000243 solution Substances 0.000 claims abstract description 18
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 14
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 14
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- 239000010959 steel Substances 0.000 claims abstract description 13
- 238000010521 absorption reaction Methods 0.000 claims abstract description 7
- 239000012670 alkaline solution Substances 0.000 claims abstract description 7
- 238000007599 discharging Methods 0.000 claims abstract description 6
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000011230 binding agent Substances 0.000 claims description 7
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 15
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- -1 alkyl gallium Chemical compound 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 238000003756 stirring Methods 0.000 abstract description 3
- 238000010977 unit operation Methods 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
Landscapes
- Manufacture And Refinement Of Metals (AREA)
Abstract
The utility model discloses the device that a kind of normal temperature directly prepares gallium trichloride-tetrahydrofuran solution, by arranging the charging of hydrogen chloride steel cylinder, retort carries out stirring reaction and dissolving, gallium trichloride-the tetrahydrofuran solution be obtained by reacting is prepared for alkyl gallium through discharge valve discharging, and connects nitrogen tube in condenser overhead and lead to nitrogen and carry out protection to whole reaction and be passed into alkaline solution absorption tank; This device in reaction simultaneously, and can realize product to be immediately dissolved in oxolane, the production of conventional gallium trichloride and dissolving two different flow processs is incorporated in same device and realizes.By the technical program, when obtaining identical gallium trichloride product, avoid conventional pyroreaction; Simultaneously because preparation and dissolving are incorporated in same unit operations, enhance productivity, reduce production cost.
Description
Technical field
The utility model relates to high purity alkyl gallium production technical field, particularly relates to the device that a kind of normal temperature directly prepares gallium trichloride-tetrahydrofuran solution.
Technical field
GaN material is the novel semiconductor material of development microelectronic component, opto-electronic device, and together with the semi-conducting material such as SIC, diamond, being described as is third generation semi-conducting material after first generation Ge, Si semi-conducting material, second generation GaAs, InP compound semiconductor materials.Up to the present, GaN film metalorganic chemical vapor deposition (MOCVD) method that quality is the highest is made, and this method has been used for preparing commercial highbrightness blue light diode.(MOCVD) legal system is for gallium nitride film, usually obtains in pyroreaction with highly purified alkyl gallium and high-purity ammon.
Gallium trichloride-tetrahydrofuran solution is the key raw material of preparation high-purity trialkyl gallium.Conventional gallium trichloride-tetrahydrofuran solution first at high temperature reacts obtained gallium trichloride with gallium and hydrogen chloride or chlorine, then gallium trichloride is dissolved in oxolane, but existing method not only relates to pyroreaction, simultaneously at course of dissolution owing to being exothermic reaction, not too be beneficial to process control, therefore, address this problem and seem particularly important.
Utility model content
The utility model provides the device that a kind of normal temperature directly prepares gallium trichloride-tetrahydrofuran solution, by adopting this device, not only increasing the yield of reaction, can also simplify production equipment, reduces production cost.
In order to solve the problem, the utility model provides the device that a kind of normal temperature directly prepares gallium trichloride-tetrahydrofuran solution, include retort and hydrogen chloride steel cylinder, described retort is connected with hydrogen chloride steel cylinder, described retort is connected by pipeline with hydrogen chloride steel cylinder, and regulating flow quantity needle-valve is provided with on described pipeline, described retort is connected with condenser, described condenser overhead is connected with nitrogen tube, the other end of described nitrogen tube is provided with alkaline solution absorption tank, be provided with siphunculus bottom described condenser, described siphunculus is provided with form.
Further improvement is: described retort is provided with binder pipe, and the termination of described binder pipe is provided with discharge valve, and the gallium trichloride-tetrahydrofuran solution obtained in retort, through discharge valve discharging, is used as and prepares trialkyl gallium.
Further improvement is: the top of described retort is provided with agitator, and the blade of described agitator is placed on the bottom of retort.
Further improvement is: described retort is provided with reinforced valve and visor.
The beneficial effects of the utility model are: the utility model carrys out charging by arranging hydrogen chloride steel cylinder, retort carries out stirring reaction and dissolving, the gallium trichloride that reaction generates directly is dissolved in oxolane, gallium trichloride-the tetrahydrofuran solution obtained is through discharge valve discharging, be used as and prepare trialkyl gallium, and condenser overhead connects nitrogen tube and leads to nitrogen and protect whole reaction, tail gas absorbs through alkaline solution absorption tank, this device in normal-temperature reaction simultaneously, and product gallium trichloride can be realized immediately be dissolved in oxolane, simultaneously because reaction and dissolving are incorporated in same unit operations, enhance productivity, reduce production cost.
Accompanying drawing explanation
Fig. 1 is schematic diagram of the present utility model.
Wherein: 1-retort, 2-hydrogen chloride steel cylinder, 3-pipeline, 4-regulating flow quantity needle-valve, 5-condenser, 6-nitrogen tube, 7-alkaline solution absorption tank, 8-siphunculus, 9-form, 10-binder pipe, 11-discharge valve, 12-agitator, 13-feeds in raw material valve, 14-visor.
Detailed description of the invention
In order to deepen understanding of the present utility model, below in conjunction with embodiment, the utility model is described in further detail, and the present embodiment, only for explaining the utility model, does not form the restriction to the utility model protection domain.
As shown in Figure 1, present embodiments provide the device that a kind of normal temperature directly prepares gallium trichloride-tetrahydrofuran solution, include retort 1 and hydrogen chloride steel cylinder 2, described retort 1 is connected with hydrogen chloride steel cylinder 2, described retort 1 is connected by pipeline 3 with hydrogen chloride steel cylinder 2, and regulating flow quantity needle-valve 4 is provided with on described pipeline 3, condenser 5 is connected with on the upside of described retort 1, described condenser 5 top is connected with nitrogen tube 6, the other end of described nitrogen tube 6 is provided with alkaline solution absorption tank 7, siphunculus 8 is provided with bottom described condenser 5, described siphunculus 8 is provided with form 9.Described retort 1 is provided with binder pipe 10, the termination of described binder pipe 10 is provided with discharge valve 11, the gallium trichloride-tetrahydrofuran solution obtained in retort 1, through discharge valve 11 discharging, is used as and prepares trialkyl gallium.The top of described retort 1 is provided with agitator 12, and the blade of described agitator 12 is placed on the bottom of retort 1.Described retort 1 is provided with reinforced valve 13 and visor 14.
The utility model carrys out charging by arranging hydrogen chloride steel cylinder 2, retort 1 carries out stirring reaction and dissolving, the gallium trichloride that reaction generates directly is dissolved in oxolane, gallium trichloride-the tetrahydrofuran solution obtained is through discharge valve 11 discharging, be used as and prepare trialkyl gallium, and condenser 5 top connects nitrogen tube 5 and leads to nitrogen and protect whole reaction, tail gas absorbs through alkaline solution absorption tank 7, this device in normal-temperature reaction simultaneously, and product gallium trichloride can be realized immediately be dissolved in oxolane, simultaneously because reaction and dissolving are incorporated in same unit operations, enhance productivity, reduce production cost.
Claims (4)
1. a normal temperature directly prepares the device of gallium trichloride-tetrahydrofuran solution, include retort (1) and hydrogen chloride steel cylinder (2), described retort (1) is connected with hydrogen chloride steel cylinder (2), it is characterized in that: described retort (1) is connected by pipeline (3) with hydrogen chloride steel cylinder (2), and regulating flow quantity needle-valve (4) is provided with on described pipeline (3), described retort (1) upside is connected with condenser (5), described condenser (5) top is connected with nitrogen tube (6), the other end of described nitrogen tube (6) is provided with alkaline solution absorption tank (7), described condenser (5) bottom is provided with siphunculus (8), described siphunculus (8) is provided with form (9).
2. normal temperature as claimed in claim 1 directly prepares the device of gallium trichloride-tetrahydrofuran solution, it is characterized in that: described retort (1) is provided with binder pipe (10), the termination of described binder pipe (10) is provided with discharge valve (11), gallium trichloride-the tetrahydrofuran solution obtained in retort (1), through discharge valve (11) discharging, is used as and prepares trialkyl gallium.
3. normal temperature as claimed in claim 1 directly prepares the device of gallium trichloride-tetrahydrofuran solution, and it is characterized in that: the top of described retort (1) is provided with agitator (12), the blade of described agitator (12) is placed on the bottom of retort (1).
4. normal temperature as claimed in claim 1 directly prepares the device of gallium trichloride-tetrahydrofuran solution, it is characterized in that: described retort (1) is provided with reinforced valve (13) and visor (14).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520006961.3U CN204522964U (en) | 2015-01-07 | 2015-01-07 | Normal temperature directly prepares the device of gallium trichloride-tetrahydrofuran solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520006961.3U CN204522964U (en) | 2015-01-07 | 2015-01-07 | Normal temperature directly prepares the device of gallium trichloride-tetrahydrofuran solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204522964U true CN204522964U (en) | 2015-08-05 |
Family
ID=53737019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520006961.3U Active CN204522964U (en) | 2015-01-07 | 2015-01-07 | Normal temperature directly prepares the device of gallium trichloride-tetrahydrofuran solution |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204522964U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104587939A (en) * | 2015-01-07 | 2015-05-06 | 安徽亚格盛电子新材料有限公司 | Device for directly preparing gallium trichloride-tetrahydrofuran solution at normal temperature |
-
2015
- 2015-01-07 CN CN201520006961.3U patent/CN204522964U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104587939A (en) * | 2015-01-07 | 2015-05-06 | 安徽亚格盛电子新材料有限公司 | Device for directly preparing gallium trichloride-tetrahydrofuran solution at normal temperature |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20140083451A1 (en) | Method for in situ cleaning of mocvd reaction chamber | |
| CN104860273B (en) | The method that two-dimentional hexagonal boron nitride is prepared using molten state reaction bed | |
| CN204522964U (en) | Normal temperature directly prepares the device of gallium trichloride-tetrahydrofuran solution | |
| CN115260223B (en) | Use of chlorine-free catalysts for producing diisopropylamine silanes | |
| CN104587939A (en) | Device for directly preparing gallium trichloride-tetrahydrofuran solution at normal temperature | |
| CN101531367A (en) | Process for producing silicane | |
| CN107445921A (en) | A kind of application of the preparation method of high-purity eugenol epoxy, product and product | |
| CN103965227A (en) | Industrial purification method of trimethyl gallium | |
| CN103951591A (en) | Production technique of guanidine hydrochloride | |
| CN105080429B (en) | The synthetic method of grade cubic boron nitride large single crystal | |
| CN108483397B (en) | Method for synthesizing cyclic boron-nitrogen-hydrogen compound aminodiborane by one-pot method | |
| CN105567982A (en) | Method for recycling metal gallium from gallium nitride waste | |
| CN204111631U (en) | A kind of trialkyl indium-etherate takes off ether device | |
| CN105111039A (en) | Preparation method of chloroisopentene | |
| CN108690063A (en) | A kind of preparation method to chlorophenylboronic acid | |
| CN107604440A (en) | It is a kind of to suppress method of the quartz container to indium phosphide melt contamination | |
| CN105315305A (en) | Synthetic method for alkyl phosphine | |
| CN106748835A (en) | A kind of preparation method of stryphnonasal | |
| CN101108784B (en) | Technique for manufacturing tetrabromoethane and equipment thereof | |
| CN106008241A (en) | Synthesis method for N,N-dimethylaminoethyl acrylate | |
| CN101383279A (en) | HVPE reactor for preparing nitride semiconductor substrate | |
| CN201729668U (en) | Anhydrous aluminum chloride production device | |
| CN105153210A (en) | Preparation method for isobutaneboronic acid | |
| CN105348051A (en) | Compounding technology of chloroethyl n-propyl ether | |
| CN103265399A (en) | Catalyst-based chlorinated neopentane preparation technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: No. 88 Baoshun Road, Economic and Technological Development Zone, Wuhu City, Anhui Province, 241000 Patentee after: Anhui Yagesheng Electronic New Materials Co.,Ltd. Address before: 241009 Third Floor, Management Committee of Wuhu Economic and Technological Development Zone, Anhui Province Patentee before: ANHUI ARGOSUN NEW ELECRONIC MATERIALS Co.,Ltd. |
|
| CP03 | Change of name, title or address |