CN204442196U - High-power impulse magnetron sputtering power supply - Google Patents
High-power impulse magnetron sputtering power supply Download PDFInfo
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- CN204442196U CN204442196U CN201520154993.8U CN201520154993U CN204442196U CN 204442196 U CN204442196 U CN 204442196U CN 201520154993 U CN201520154993 U CN 201520154993U CN 204442196 U CN204442196 U CN 204442196U
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Abstract
High-power impulse magnetron sputtering power supply is characterized in that: this device comprises the DC power supply circuit, capacitance group, the pulse generating circuit that are linked in sequence; Described DC power supply circuit is connected with pwm control circuit respectively with pulse generating circuit.The utility model is owing to adopting above technical scheme, identical on 4 IGBT turn-on and turn-off control times of guarantee, pulse generation circuit can be opened under high voltages and turn off, meet the output HIGH voltage of high power pulse magnetic control technology and the requirement of big current, there is the advantages such as stable performance, cost are lower, safe and reliable operation.
Description
Technical field
The utility model relates to magnetron sputtering technique field, particularly relates to a kind of high-power impulse magnetron sputtering power supply.
Background technology
Sputter coating is under vacuum conditions, utilizes charged particle bombardment target, surface atom occurs and collides and the transfer of energy and momentum occurs, target atom is overflowed from surface and is deposited on film forming process backing material.Magnetron sputtering technique is the one of sputtering technology, is to utilize electromagnetic field to control the movement locus of gas anomaly glow discharge intermediate ion, electronics and the sputter coating process process of distribution situation in vacuum chamber.Conventional magnetron sputtering technology splash-proofing sputtering metal exists mainly with state of atom greatly, and metal ionization level is low, and film adhesion is weak, and plated film district is shallow, is only applicable to plane workpiece.High-power impulse magnetron sputtering technology utilizes higher pulse peak power and lower pulse duty factor to produce a kind of magnetron sputtering technique of high splash-proofing sputtering metal ionization level.High-power impulse magnetron sputtering power supply, output voltage reaches more than 2000 volts, more than output current 1000A, within minimum pulse width 10 microsecond, peak power reaches MW class, and be 100 times of common magnetron shielding power supply, sputter material ionization level is high, significantly can improve density and the adhesion of film, and sputter can be carried out to the workpiece of complexity body.
Chinese patent 201220111912 provides " digital high power one pole pulsed magnetron sputtering power supply "; it adopts serial-resonant inverter; adopt the energy storage network of inductance capacitance composition; adopt DSP control realization continuous parameters on-line control and various protection, and adopt single tube IGBT (insulated gate bipolar transistor) as the control switch exporting pulse.Commercialization single tube IGBT power model, its withstand voltage is from 650 volts to 6000 volts.High withstand voltage IGBT, response speed is slow, can not meet low pulse duty factor; Low withstand voltage IGBT, fast response time, can not export high impulse crest voltage.Therefore employing single tube IGBT is difficult to the whole technical requirements meeting high-power impulse magnetron sputtering technology.
Utility model content
The utility model is for the deficiencies in the prior art, provides the high-power impulse magnetron sputtering power supply that a kind of stable performance, cost are lower, have high impulse crest voltage.
The utility model is realized by the following technical programs:
High-power impulse magnetron sputtering power supply is characterized in that: this device comprises the DC power supply circuit, capacitance group, the pulse generating circuit that are linked in sequence; Described DC power supply circuit is connected with pwm control circuit respectively with pulse generating circuit.
Be preferably: described capacitance group is parallel to the output of DC power supply circuit; Described capacitance group is in parallel again after electric capacity that multiple capacity is identical is in series; Series connection object improves the withstand voltage of electric capacity, and object in parallel improves the capacity of electric capacity, and then improve energy storage.
Be preferably: described pulse generating circuit comprises four unit modules and the diode D11 and diode D22 of switching tube V1, V2, V3, V4 composition.Described switching tube V1, V2, V3, V4 are igbt transistor, and four described switching tube sequential series make switching tube withstand voltage be multiplied, and form 4 igbt transistor unit; Described diode D11 and switching tube V3, V4 anti-series, described diode D22 and switching tube V1, V2 anti-series.
Be preferably: each described igbt transistor unit comprises static state voltage equipoise circuit, dynamic voltage-balancing and igbt transistor; The control end of described igbt transistor connects pwm control circuit; Described static state voltage equipoise circuit is resistance R11, R22, R33, the R44 with similar resistance, and connects with resistance R22 one end in resistance R11 one end, and the resistance R11 other end is connected with capacitance group one end, and the resistance R22 other end is connected with magnetic control sputtering device substrate; Connect with resistance R44 one end in resistance R33 one end, the resistance R33 other end is connected with magnetic control sputtering device target, and the resistance R44 other end connects with the capacitance group other end; Described dynamic voltage-balancing is connected after to be Transient Suppression Diode in parallel with a resistor with Capacitance parallel connection, fly-wheel diode again; Described Transient Suppression Diode negative electrode connects with fly-wheel diode negative electrode.
Be preferably: the maximum breakdown voltage of described transient diode will lower than the withstand voltage of IGBT.
Be preferably: described diode D11 anode, switching tube V3 tie point connect magnetic control sputtering device target, and described diode D22 negative electrode and switching tube V2 tie point connect magnetic control sputtering device substrate.
Pwm control circuit major function in the utility model is: the generation of pulse-width signal; The protection of abnormal arc discharge; The generation of pulse signal and the adjustment of frequency.
Beneficial effect: the utility model is owing to adopting above technical scheme, identical on 4 IGBT turn-on and turn-off control times of guarantee, pulse generation circuit can be opened under high voltages and turn off, meet the output HIGH voltage of high power pulse magnetic control technology and the requirement of big current, there is the advantages such as stable performance, cost are lower, safe and reliable operation.
Accompanying drawing explanation
Accompanying drawing 1 is circuit structure diagram of the present utility model.
Embodiment
See accompanying drawing one.
High-power impulse magnetron sputtering power supply is characterized in that: this device comprises the DC power supply circuit, capacitance group, the pulse generating circuit that are linked in sequence; Described DC power supply circuit is connected with pwm control circuit respectively with pulse generating circuit.
Described capacitance group is parallel to the output of DC power supply circuit; Described capacitance group is in parallel again after electric capacity that multiple capacity is identical is in series; Series connection object improves the withstand voltage of electric capacity, and object in parallel improves the capacity of electric capacity, and then improve energy storage.
Described pulse generating circuit comprises four unit modules and the diode D11 and diode D22 of switching tube V1, V2, V3, V4 composition.Described switching tube V1, V2, V3, V4 are igbt transistor, and four described switching tube sequential series make switching tube withstand voltage be multiplied, and form 4 igbt transistor unit; Described diode D11 and switching tube V3, V4 anti-series, described diode D22 and switching tube V1, V2 anti-series.
Each described igbt transistor unit comprises static state voltage equipoise circuit, dynamic voltage-balancing and igbt transistor; The control end of described igbt transistor connects pwm control circuit; Described static state voltage equipoise circuit is resistance R11, R22, R33, the R44 with similar resistance, and connects with resistance R22 one end in resistance R11 one end, and the resistance R11 other end is connected with capacitance group one end, and the resistance R22 other end is connected with magnetic control sputtering device substrate; Connect with resistance R44 one end in resistance R33 one end, the resistance R33 other end is connected with magnetic control sputtering device target, and the resistance R44 other end connects with the capacitance group other end; Described dynamic voltage-balancing is connected after to be Transient Suppression Diode in parallel with a resistor with Capacitance parallel connection, fly-wheel diode again; Described Transient Suppression Diode negative electrode connects with fly-wheel diode negative electrode.
The maximum breakdown voltage of described transient diode will lower than the withstand voltage of IGBT.
Described diode D11 anode, switching tube V3 tie point connect magnetic control sputtering device target, and described diode D22 negative electrode and switching tube V2 tie point connect magnetic control sputtering device substrate.
DC power supply circuit is for generation of DC power supply, and its electric current and voltage is by pwm control circuit Inspect and control.
Pulse generating circuit is for generation of high frequency power pulse, and its frequency and duty ratio control by pwm control circuit.
Pwm control circuit, for gathering voltage and current signal, sends DC power supply circuit control signal, sends pulse generating circuit control signal, and immediately closes output when arc discharge being detected.
Switching tube V1, V2, V3, V4 of pulse generating circuit open and shutoff simultaneously.During switching tube conducting, electric current flows out from DC power anode, is powered to plasma by V1, V2, flows back to DC power cathode through V3, V4; When switching tube turns off, due to the existence of line inductance, the electric current on it can not suddenly change and can induce inverse electromotive force, cause diode D11, D22 conducting afterflow, electric current flows out from DC power cathode, is powered to plasma by D22, flows back to DC power anode through switching tube D11.
Four IGBT unit have the consistency of composition device property, ensure that IGBT opens, turn off and transient process time dividing potential drop consistency.The consistency of the dynamic dividing potential drop of IGBT unit: electric capacity is connected between the output of IGBT and fly-wheel diode, for the superpotential absorption in IGBT turn off process; Transient Suppression Diode is connected between the output of IGBT and fly-wheel diode, for capacitor voltage clamped, also namely to the voltage clamping of IGBT, prevents transient overvoltage.The maximum breakdown voltage of Transient Suppression Diode will lower than the withstand voltage of IGBT.Resistance and capacitances in series, to the restriction of capacitance discharge current in IGBT opening process.Pwm control circuit opens and cut-off signals to four IGBT unit simultaneously, this ensures that there the dividing potential drop consistency opened with turning off the moment, because four Transient Suppression Diode clamp voltages are identical, and resistance, electric capacity Capacity uniformity, therefore four IGBT all there will not be overvoltage and the phenomenon that punctures in turn off process and in opening process, ensure that the consistency opened with dividing potential drop in turn off process.The consistency of the static dividing potential drop of IGBT unit: when IGBT all turns off, due to the consistency of resistance in static state voltage equipoise circuit, the consistency of each IGBT dividing potential drop under making off state.
Pwm control circuit, is made up of integral control circuit and peripheral protective circuit.Its function is: the collection of electric current, voltage signal and computing; The generation of pulse-width signal; The protection of abnormal arc discharge; The generation of pulse signal and the adjustment of frequency.
Set forth a lot of detail in the above description so that fully understand the utility model.But above description is only preferred embodiment of the present utility model, the utility model can be much different from alternate manner described here to implement, and therefore the utility model is not by the disclosed concrete restriction implemented above.Any those skilled in the art are not departing under technical solutions of the utility model ambit simultaneously, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solutions of the utility model, or be revised as the Equivalent embodiments of equivalent variations.Every content not departing from technical solutions of the utility model, according to technical spirit of the present utility model to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solutions of the utility model protection.
Claims (5)
1. high-power impulse magnetron sputtering power supply, is characterized in that: comprise the DC power supply circuit, capacitance group, the pulse generating circuit that are linked in sequence; Described DC power supply circuit is connected with pwm control circuit respectively with pulse generating circuit.
2. high-power impulse magnetron sputtering power supply according to claim 1, is characterized by: described capacitance group is parallel to the output of DC power supply circuit; Described capacitance group is in parallel again after electric capacity that multiple capacity is identical is in series.
3. according to the arbitrary described high-power impulse magnetron sputtering power supply of claim 1-2, it is characterized by: described pulse generating circuit comprises four unit modules and the diode D11 and diode D22 of switching tube V1, V2, V3, V4 composition; Described switching tube V1, V2, V3, V4 are igbt transistor, and four described switching tube sequential series make switching tube withstand voltage be multiplied, and form 4 igbt transistor unit; Described diode D11 and switching tube V3, V4 anti-series, described diode D22 and switching tube V1, V2 anti-series.
4. high-power impulse magnetron sputtering power supply according to claim 3, is characterized by: each described igbt transistor unit comprises static state voltage equipoise circuit, dynamic voltage-balancing and igbt transistor; The control end of described igbt transistor connects pwm control circuit; Described static state voltage equipoise circuit is resistance R11, R22, R33, the R44 with similar resistance, and connects with resistance R22 one end in resistance R11 one end, and the resistance R11 other end is connected with capacitance group one end, and the resistance R22 other end is connected with magnetic control sputtering device substrate; Connect with resistance R44 one end in resistance R33 one end, the resistance R33 other end is connected with magnetic control sputtering device target, and the resistance R44 other end connects with the capacitance group other end; Described dynamic voltage-balancing is connected after to be Transient Suppression Diode in parallel with a resistor with Capacitance parallel connection, fly-wheel diode again; Described Transient Suppression Diode negative electrode connects with fly-wheel diode negative electrode.
5. high-power impulse magnetron sputtering power supply according to claim 3, is characterized by: described diode D11 anode, switching tube V3 tie point connect magnetic control sputtering device target, and described diode D22 negative electrode and switching tube V2 tie point connect magnetic control sputtering device substrate.
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| CN201520154993.8U CN204442196U (en) | 2015-03-19 | 2015-03-19 | High-power impulse magnetron sputtering power supply |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109811324A (en) * | 2019-03-14 | 2019-05-28 | 哈尔滨工业大学 | Device and method based on heterogeneous double target high-power impulse magnetron sputtering preparation doping class films |
| CN111404363A (en) * | 2020-02-26 | 2020-07-10 | 华为技术有限公司 | Capacitor series-parallel switching circuit and electronic system |
| CN112080728A (en) * | 2020-08-12 | 2020-12-15 | 北京航空航天大学 | HiPIMS system and method for reducing HiPIMS discharge current delay |
| CN113054958A (en) * | 2021-02-18 | 2021-06-29 | 上海萍生微电子科技有限公司 | Radio frequency switch and radio frequency communication system thereof |
| WO2021181295A1 (en) * | 2020-03-10 | 2021-09-16 | Slovenská Technická Univerzita V Bratislave | Connection of high-performance pulse discharge plasma generator, especially for magnetron sputtering |
-
2015
- 2015-03-19 CN CN201520154993.8U patent/CN204442196U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109811324A (en) * | 2019-03-14 | 2019-05-28 | 哈尔滨工业大学 | Device and method based on heterogeneous double target high-power impulse magnetron sputtering preparation doping class films |
| CN111404363A (en) * | 2020-02-26 | 2020-07-10 | 华为技术有限公司 | Capacitor series-parallel switching circuit and electronic system |
| CN111404363B (en) * | 2020-02-26 | 2022-02-15 | 华为数字能源技术有限公司 | Capacitor series-parallel switching circuit and electronic system |
| WO2021181295A1 (en) * | 2020-03-10 | 2021-09-16 | Slovenská Technická Univerzita V Bratislave | Connection of high-performance pulse discharge plasma generator, especially for magnetron sputtering |
| US12051578B2 (en) | 2020-03-10 | 2024-07-30 | Slovenka Technicka Univerzita V. Bratilasve | Connection of high-performance pulse discharge plasma generator, especially for magnetron sputtering |
| CN112080728A (en) * | 2020-08-12 | 2020-12-15 | 北京航空航天大学 | HiPIMS system and method for reducing HiPIMS discharge current delay |
| CN113054958A (en) * | 2021-02-18 | 2021-06-29 | 上海萍生微电子科技有限公司 | Radio frequency switch and radio frequency communication system thereof |
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