CN204810250U - High voltage loop circuit initiative equalizer circuit of high pressure solid -state switch - Google Patents
High voltage loop circuit initiative equalizer circuit of high pressure solid -state switch Download PDFInfo
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- CN204810250U CN204810250U CN201520039337.3U CN201520039337U CN204810250U CN 204810250 U CN204810250 U CN 204810250U CN 201520039337 U CN201520039337 U CN 201520039337U CN 204810250 U CN204810250 U CN 204810250U
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- resistance
- electric capacity
- igbt
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- voltage
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Abstract
The utility model discloses a high voltage loop circuit initiative equalizer circuit of high pressure solid -state switch, including electric capacity C1, electric capacity C2, resistance R1, resistance R2, resistance R3 and diode D1, its characterized in that, resistance R1 and resistance R2 establish ties, electric capacity C1 and electric capacity C2 establish ties, and electric capacity C1 and resistance R1 are parallelly connected, and electric capacity C2 and resistance R2 are parallelly connected, resistance R3 is current -limiting resistor, the utility model discloses change the shortcoming that the voltage -sharing of IGBT series connection in the past circuit control is complicated, with high costs, the consumption is higher, through adopting new voltage -sharing circuit topology structure for the speed of the growth of IGBT series operation overvoltage slows down, is favorable to the IGBT series operation, owing to introduced feedback path, the response of switch is accelerated, can effectively restrain the overvoltage that IGBT establishes ties.
Description
Technical field
The utility model relates to high-voltage switch gear field, specifically a kind of high tension loop of high-pressure solid-state switch initiatively equalizer circuit.
Background technology
Under the occasion of high-power high-voltage, single IGBT is difficult to reach requirement as high-pressure solid-state switch.Low for voltage withstand class tens IGBT are carried out tandem energy and effectively solves the low defect of single IGBT voltage withstand class, and cost is lower, receives and pays close attention to widely.Ensure that each IGBT drain-source voltage any moment of sealing in is all the basic demand realizing IGBT series connection lower than the rated voltage of single IGBT.Therefore a suitable dynamic voltage-balancing is most important to realizing IGBT series connection.
The auxiliary circuit that current researcher adopts multiple IGBT to connect and signal controlling compensating circuit are to improve the dynamic dividing potential drop of IGBT series connection.Mainly contain: the control of passive snubber circuit, resonance buffer circuit, gate voltage, gate current control, gate voltage or current-clamp control and gate electrode drive signals time delay adjustment.Said method can be summarized as direct ACTIVE CONTROL and indirect Passive Control 2 class.The former, mainly through forming a closed-loop control of feeding back with gate electrode drive signals, effectively can realize dynamic voltage balancing, but controls complicated, and cost is high, and economic adaptability is lower.The latter mainly introduces RCD buffer circuit or gate electrode resistance in IGBT periphery, realizes IGBT indirect dynamic and all to press or to IGBT drain-source pole over-voltage suppression, this passive indirect control structure is simple, cost is low, but all press reliability flexibility to can't wait the former.
Utility model content
The purpose of this utility model is the high tension loop initiatively equalizer circuit providing a kind of high-pressure solid-state switch, to solve the problem proposed in above-mentioned background technology.
For achieving the above object, the utility model provides following technical scheme:
A high tension loop initiatively equalizer circuit for high-pressure solid-state switch, comprises electric capacity C
1, electric capacity C
2, resistance R
1, resistance R
2, resistance R
3with diode D
1, described resistance R
1with resistance R
2series connection; Described electric capacity C
1with electric capacity C
2series connection, electric capacity C
1with resistance R
1parallel connection, electric capacity C
2with resistance R
2parallel connection, described resistance R
3for current-limiting resistance, described resistance R
1with resistance R
2be connected in series drain electrode and the source electrode of IGBT, described resistance R
1with resistance R
2parallel-connected diodes D
1anode, described electric capacity C
1with electric capacity C
2parallel-connected diodes D
1anode, described diode D
1negative electrode be connected in series resistance R
3, described resistance R
3the other end connect the grid of IGBT, the grid of described IGBT connects drive circuit.
Compared with prior art, the beneficial effects of the utility model are: the utility model changes the shortcoming that IGBT series average-voltage control circui is complicated, cost is high, power consumption is higher in the past, by adopting new equalizer circuit topological structure, the speed of the superpotential growth of IGBT series operation is slowed down, is conducive to IGBT series operation.Owing to introducing feedback path, the response of switch is accelerated, the overvoltage that can effectively suppress IGBT to connect.
Accompanying drawing explanation
Fig. 1 is the structural representation of the high tension loop active equalizer circuit of a kind of high-pressure solid-state switch of the utility model.
Fig. 2 is N number of IGBT and active equalizer circuit cascaded structure schematic diagram.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, be clearly and completely described the technical scheme in the utility model embodiment, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
Refer to Fig. 1 ~ 2, in the utility model embodiment, a kind of high tension loop initiatively equalizer circuit of high-pressure solid-state switch, comprises electric capacity C
1, electric capacity C
2, resistance R
1, resistance R
2, resistance R
3with diode D
1, described resistance R
1with resistance R
2series connection; Described electric capacity C
1with electric capacity C
2series connection, electric capacity C
1with resistance R
1parallel connection, electric capacity C
2with resistance R
2parallel connection, described resistance R
3for current-limiting resistance, described resistance R
1with resistance R
2be connected in series drain electrode and the source electrode of IGBT, described resistance R
1with resistance R
2parallel-connected diodes D
1anode, described electric capacity C
1with electric capacity C
2parallel-connected diodes D
1anode, described diode D
1negative electrode be connected in series resistance R
3, described resistance R
3the other end connect the grid of IGBT, the grid of described IGBT connects drive circuit.
Operation principle of the present utility model is: when IGBT does not open, and carries out static state voltage equipoise to IGBT.The voltage of the IGBT quiescent voltage overwhelming majority concentrates on R
1two ends.
(2) when IGBT opens completely, C
1relative to C
2it is a DC source.C
1by IGBT to C
2charging, by C
2polarity is filled instead.C
1electricity substantially remain unchanged, voltage U
c1substantially remain unchanged, U
c2=-U
c1.The grid of IGBT is high potential, diode D
1reverse cut-off, isolates drive singal and feedback path.
(3) when IGBT starts to turn off, be reduced to 0 gradually by the electric current of IGBT, circuit passes through C
1to C
2charging, U
c2from-U
c1increase to positive polarity gradually.Now U
iGBT=U
c1+ U
c2.
(4) when IGBT turns off for a certain reason, two ends, IGBT drain-source pole produce overvoltage, and main circuit is to C
1and C
2charging.U
c1constant, and U
c2for just and rise very fast.During shutoff, the current potential of IGBT grid is low, D
1conducting, to the triggering signal that IGBT grid one is positive, IGBT is open-minded, and the overvoltage at its two ends disappears, U
c2get back to current potential during IGBT static state dividing potential drop.
(5) when IGBT does not open completely, for a certain reason, overvoltage is produced at IGBT two ends, same electric capacity C
2the current potential of top crown can rise very fast, by diode D
1conducting, produces positive voltage signal, accelerates the open-minded of IGBT, effectively can suppress the overvoltage at two ends, IGBT drain-source pole.
To two IGBT simultaneously to opening triggering signal, make two IGBT simultaneously not open-minded because the existence of stray inductance, electric capacity or IGBT self dynamic characteristic such as to there are differences at the reason, suppose that IGBT1 receives triggering signal prior to IGBT2, time of delay is T.Receive triggering signal at IGBT1 and to open and IGBT2 does not open during this period of time, IGBT1 drain-source voltage U
cE1decline, circuit starts C
3, C
4serial connection charge.C
3, C
4flow through identical electricity, C
3the voltage at two ends remains unchanged substantially, C
4the voltage rise at two ends is very fast.Being equivalent to generation high potential signal is added on the gate pole of IGBT2, maintains IGBT2 drain-source pole both end voltage and remains unchanged, and this process is continued until that the gate pole of the triggering signal arrival IGBT2 of IGBT2 just terminates.There is not the due to voltage spikes higher than single IGBT quiescent voltage in whole opening process, this is highly beneficial for IGBT series operation.
Give two IGBT simultaneously and turn off triggering signal, because the reasons such as the existence of stray inductance, electric capacity or IGBT self dynamic characteristic there are differences make two IGBT not turn off simultaneously, suppose that IGBT1 receives triggering signal prior to IGBT2, time of delay is T.In IGBT1 turn off process, IGBT2 does not turn off, and causes the drain-source pole both end voltage U of IGBT1
cE1rapid rising, circuit starts C
1, C
2serial connection charge, C
1, C
2flow through identical electricity, C
1the voltage at two ends remains unchanged substantially, C
2the voltage rise at two ends is very fast.Being equivalent to generation high potential signal is added on the gate pole of IGBT1, delays the shutoff moment of IGBT1.This process is continued until that IGBT2 gate pole receives shutoff triggering signal and just terminates.The drain-source pole both end voltage of whole turn off process IGBT1 and IGBT2 is consistent substantially at shutdown moment, highly beneficial for IGBT series operation.
To those skilled in the art, obvious the utility model is not limited to the details of above-mentioned one exemplary embodiment, and when not deviating from spirit of the present utility model or essential characteristic, can realize the utility model in other specific forms.Therefore, no matter from which point, all should embodiment be regarded as exemplary, and be nonrestrictive, scope of the present utility model is limited by claims instead of above-mentioned explanation, and all changes be therefore intended in the implication of the equivalency by dropping on claim and scope are included in the utility model.Any Reference numeral in claim should be considered as the claim involved by limiting.
In addition, be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should by specification integrally, and the technical scheme in each embodiment also through appropriately combined, can form other execution modes that it will be appreciated by those skilled in the art that.
Claims (1)
1. the high tension loop of a high-pressure solid-state switch initiatively equalizer circuit, comprises electric capacity C
1, electric capacity C
2, resistance R
1, resistance R
2, resistance R
3with diode D
1, it is characterized in that, described resistance R
1with resistance R
2series connection; Described electric capacity C
1with electric capacity C
2series connection, electric capacity C
1with resistance R
1parallel connection, electric capacity C
2with resistance R
2parallel connection, described resistance R
3for current-limiting resistance, described resistance R
1with resistance R
2be connected in series drain electrode and the source electrode of IGBT, described resistance R
1with resistance R
2parallel-connected diodes D
1anode, described electric capacity C
1with electric capacity C
2parallel-connected diodes D
1anode, described diode D
1negative electrode be connected in series resistance R
3, described resistance R
3the other end connect the grid of IGBT, the grid of described IGBT connects drive circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520039337.3U CN204810250U (en) | 2015-01-21 | 2015-01-21 | High voltage loop circuit initiative equalizer circuit of high pressure solid -state switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520039337.3U CN204810250U (en) | 2015-01-21 | 2015-01-21 | High voltage loop circuit initiative equalizer circuit of high pressure solid -state switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204810250U true CN204810250U (en) | 2015-11-25 |
Family
ID=54594999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520039337.3U Expired - Fee Related CN204810250U (en) | 2015-01-21 | 2015-01-21 | High voltage loop circuit initiative equalizer circuit of high pressure solid -state switch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204810250U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111830864A (en) * | 2020-06-13 | 2020-10-27 | 青岛鼎信通讯股份有限公司 | Current generating circuit for line-to-line relation identification terminal |
| CN112187231A (en) * | 2020-08-04 | 2021-01-05 | 青岛鼎信通讯股份有限公司 | IGBT series gate terminal voltage-sharing circuit for line variation relation recognition |
-
2015
- 2015-01-21 CN CN201520039337.3U patent/CN204810250U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111830864A (en) * | 2020-06-13 | 2020-10-27 | 青岛鼎信通讯股份有限公司 | Current generating circuit for line-to-line relation identification terminal |
| CN111830864B (en) * | 2020-06-13 | 2024-01-23 | 青岛鼎信通讯股份有限公司 | Current generation circuit for linear transformation relation identification terminal |
| CN112187231A (en) * | 2020-08-04 | 2021-01-05 | 青岛鼎信通讯股份有限公司 | IGBT series gate terminal voltage-sharing circuit for line variation relation recognition |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151125 Termination date: 20160121 |
|
| EXPY | Termination of patent right or utility model |