CN204441295U - The electrode structure at right side of crystal silicon solar batteries and crystal silicon solar batteries - Google Patents
The electrode structure at right side of crystal silicon solar batteries and crystal silicon solar batteries Download PDFInfo
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- CN204441295U CN204441295U CN201520080767.XU CN201520080767U CN204441295U CN 204441295 U CN204441295 U CN 204441295U CN 201520080767 U CN201520080767 U CN 201520080767U CN 204441295 U CN204441295 U CN 204441295U
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Abstract
The utility model discloses a kind of electrode structure at right side and crystal silicon solar batteries of crystal silicon solar batteries, the electrode structure at right side of wherein said crystal silicon solar batteries, comprise many main gate line and secondary grid line, many described main gate line is arranged in parallel, described secondary grid line comprises the first secondary grid line, many described first secondary grid line is arranged in parallel, described first secondary grid line is connected with described main gate line is substantially vertical, described first secondary grid line comprises multistage first point of secondary grid line, described in multistage, first point of secondary grid line arranges along the direction perpendicular to described main gate line, the hop count of described first point of secondary grid line is equal with the number of described main gate line, and every section of described first point of secondary grid line is all substantially vertical with described main gate line is connected.The electrode structure at right side of above-mentioned crystal silicon solar batteries, reduces the shading-area of electrode to greatest extent, improves current collection efficiency.In addition above-mentioned crystal silicon solar batteries uses conventional batteries technological process manufacture, completely compatible with existing equipment, does not increase new equipment, reduces production cost, improves production efficiency.
Description
Technical field
The utility model relates to area of solar cell, particularly relates to electrode structure at right side and the crystal silicon solar batteries of crystal silicon solar batteries.
Background technology
Solar energy is a kind of clean green regenerative energy sources, and traditional energy is increasingly exhausted, environmental pollution is more and more serious, and the solar cell based on photovoltaic technology is more and more subject to the favor of people.But how faster the most urgent difficult problem that crystal silicon solar batteries faces is cost efficiency, reaches the target of competing mutually with conventional energy resource.
In crystal silicon solar batteries, the metal electrode of cell piece often adopts silk screen printing, and the cost printing material used silver slurry accounts for 17% of crystal silicon solar batteries, and the thin grid line charge-trapping of existing linearity is limited in one's ability in addition, is unfavorable for the raising of electricity conversion.Therefore how to control silver slurry consumption to reduce production cost, improve the conversion efficiency of solar cell to adapt to the market demand growing to high-power battery, significant.
Utility model content
Based on this, be necessary to provide a kind of electrode structure at right side and the crystal silicon solar batteries that improve the crystal silicon solar batteries of the conversion efficiency of battery.
A kind of electrode structure at right side of crystal silicon solar batteries, comprise many main gate line and secondary grid line, many described main gate line is arranged in parallel, described secondary grid line comprises the first secondary grid line, many described first secondary grid line is arranged in parallel, described first secondary grid line is connected with described main gate line is substantially vertical, described first secondary grid line comprises multistage first point of secondary grid line, described in multistage, first point of secondary grid line arranges along the direction perpendicular to described main gate line, the hop count of described first point of secondary grid line is equal with the number of described main gate line, and every section of described first point of secondary grid line is all substantially vertical with described main gate line is connected.
Wherein in an embodiment, described secondary grid line also comprises the second secondary grid line; Described first point of secondary grid line be not when the marginal position of the electrode structure at right side of described crystal silicon solar batteries, adjacent two described first point secondary grid lines connect in the same side by described second secondary grid line, and described in every bar, first point of secondary grid line is connected with adjacent two described first point secondary grid lines respectively by described second secondary grid line.
Wherein in an embodiment, described first point of secondary grid line is when the marginal position of the electrode structure at right side of described crystal silicon solar batteries, and every adjacent two described first point secondary grid lines only connect in the marginal position side of the electrode structure at right side away from described crystal silicon solar batteries by described second secondary grid line.
Wherein in an embodiment, the described second secondary grid line of one end that adjacent two sections described first point secondary grid lines are close is dislocation at described main gate line bearing of trend.
Wherein in an embodiment, described second secondary grid line is semicircle.
Wherein in an embodiment, described first point of secondary grid line is four sections, and described main gate line is four.
Wherein in an embodiment, described main gate line comprises slurry Printing Zone and the first vacancy section, and described first vacancy section is rectangle vacancy section.
Wherein in an embodiment, described main gate line also comprises the second vacancy section, and described second vacancy section is disposed in the first vacancy section described in adjacent two.
Wherein in an embodiment, described second vacancy section is round dot vacancy section, and described round dot vacancy section is point row's parallel arrangement, and the described round dot hollow out dislocation arrangement of adjacent rows.
A kind of crystal silicon solar batteries, comprises the electrode structure at right side of above-mentioned crystal silicon solar batteries.
The electrode structure at right side of above-mentioned crystal silicon solar batteries, reduces the shading-area of electrode to greatest extent, improves current collection efficiency.In addition, the electrode structure at right side of above-mentioned crystal silicon solar batteries uses conventional batteries technological process manufacture, completely compatible with existing equipment, does not increase new equipment, reduces production cost, improves production efficiency.
Accompanying drawing explanation
Fig. 1 is the structural representation of electrode structure at right side one embodiment of the utility model crystal silicon solar batteries;
Fig. 2 is the structure for amplifying schematic diagram of part A in Fig. 1;
Fig. 3 is the structure for amplifying schematic diagram of the second vacancy section shown in Fig. 1;
Fig. 4 is existing electrode structure at right side schematic diagram.
Embodiment
For the ease of understanding the utility model, below with reference to relevant drawings, the utility model is described more fully.Preferred embodiment of the present utility model is given in accompanying drawing.But the utility model can realize in many different forms, is not limited to embodiment described herein.On the contrary, provide the object of these embodiments be make the understanding of disclosure of the present utility model more comprehensively thorough.
Unless otherwise defined, all technology used herein and scientific terminology are identical with belonging to the implication that those skilled in the art of the present utility model understand usually.The object of the term used in specification of the present utility model herein just in order to describe specific embodiment, is not intended to be restriction the utility model.Term as used herein " and/or " comprise arbitrary and all combinations of one or more relevant Listed Items.
See figures.1.and.2, the electrode structure at right side 10 of the crystal silicon solar batteries of one embodiment, comprise many main gate line 110 and secondary grid line, many main gate line 110 is arranged in parallel, secondary grid line comprises the first secondary grid line 120, many the first secondary grid line 120 is arranged in parallel, first secondary grid line 120 is connected with main gate line 110 is basic vertical, first secondary grid line 120 comprises the secondary grid line 121 of multistage first point, the secondary grid line 121 of multistage first point arranges along the direction perpendicular to main gate line 110, the hop count of first point of secondary grid line 121 is equal with the number of main gate line 110, and first point every section secondary grid line 121 is all basic vertical with main gate line 110 is connected.
The effect of secondary grid line is collected current, therefore as far as possible collected current in large area, need the as far as possible large electrode structure at right side 10 covering whole crystal silicon solar batteries, but the area coverage of secondary grid line can increase shading-area again too greatly, the absorptance of crystal silicon solar batteries is reduced, therefore needs to obtain maximum current collection efficiency with minimum shading-area.The electrode structure at right side 10 of above-mentioned crystal silicon solar batteries, secondary grid line adopts segmental structure, not only reduces the shading-area of electrode to greatest extent, and improves current collection efficiency.In addition the electrode structure at right side 10 of above-mentioned crystal silicon solar batteries uses conventional batteries technological process manufacture, completely compatible with existing equipment, does not increase new equipment, reduces production cost, improves production efficiency.
In order to improve current collection efficiency and structure is attractive in appearance, especially, secondary grid line is equidistantly arranged in parallel.Especially, each main gate line 110 is positioned on the perpendicular bisector of corresponding one section first point secondary grid line 121.
Continue with reference to Fig. 2, secondary grid line also comprises the second secondary grid line 130; First point of secondary grid line 121 be not when the marginal position of the electrode structure at right side 10 of crystal silicon solar batteries, adjacent two first point secondary grid line 121 connects in the same side by the second secondary grid line 130, and every secondary grid line 121 of bar first point is connected with adjacent two first point secondary grid line 121 respectively by the second secondary grid line 130.First point of secondary grid line 121 is connected into continuous print S type structure by the second secondary grid line 130, is conducive to the electric current collecting adjacent two sections first point secondary grid line 121, thus improves electrode collection efficiency and electricity conversion.
First point of secondary grid line 121 is when the marginal position of the electrode structure at right side 10 of crystal silicon solar batteries, and every adjacent two first point secondary grid line 121 only connects in the marginal position side of the electrode structure at right side 10 away from crystal silicon solar batteries by the second secondary grid line 130.First point of secondary grid line 121 is the structure of opening near the side at electrode structure at right side 10 edge of crystal silicon solar batteries, first point of secondary grid line 121 is in the position at edge, need the electric current of collection relatively little, therefore achieve and reduce electrode shading-area to greatest extent to obtain current collection efficiency to greatest extent.
Especially, the second secondary grid line 130 of one end that adjacent two sections first point secondary grid line 121 is close is dislocation at main gate line 110 bearing of trend, is conducive to the electric current collecting adjacent two sections first point secondary grid line 121, thus improves electrode collection efficiency and electricity conversion.
Especially, the second secondary grid line 130 is straight line or curve.Particularly, in the present embodiment, the second secondary grid line 130 is semicircle.
Especially, first point of secondary grid line 121 is provided with 80-110 bar.
Especially, first point of secondary grid line 121 is four sections, and main gate line 110 is four.
Continue with reference to Fig. 2, especially, main gate line 110 comprises slurry Printing Zone (figure does not mark) and the first vacancy section, vacancy section 111, first 111 is rectangle vacancy section.Slurry Printing Zone is the electrode silver plasm printing zone of crystal silicon solar batteries.First vacancy section 111 makes main gate line 110 be divided into segmental structure, reduce further electrode silver plasm printing unit consumption, decreases electrode surface shading-area, further reduce production cost, improve the collection efficiency of electric current.More particularly, first vacancy section 111 along the length of main gate line 110 length direction be with the probe location of subsequent handling test machine one to one, when ensureing that test machine is tested at every turn, probe can be pressed onto on the first vacancy section 111 of main gate line 110, does not affect test result.
Main gate line 110 is returned welding and is provided platform, to weld thus can be coupled together by cell panel by multiple electricity sun by wire with main gate line 110.Particularly, form two sidelines 1110 of the main gate line 100 of the first vacancy section 111, " showing money or valuables one carries unintentionally " illusion that there will not be part main grid to contact with welding in welding skew certain limit can be ensured.Especially, the width of main gate line 110 is basic consistent with the width of welding.
With reference to Fig. 2 and Fig. 3, especially, it is round dot vacancy section that main gate line 110 also comprises the second vacancy section, vacancy section 112, second 112.Especially, the second vacancy section 112 is disposed between adjacent two the first vacancy sections 111.Round dot vacancy section decreases electrode silver plasm printing unit consumption to a certain extent, more importantly, when the round dot vacancy section in main gate line 110 makes to weld, contacts with part round dot vacancy section, improves welding efficiency.More specifically, round dot vacancy section is point row's parallel arrangement, and the round dot hollow out of adjacent rows dislocation arrangement, stripping electrode intensity is maximized, is better than entirely solid main gate line design.
Especially, the end of main gate line 110 is provided with divergent electrode 113.Particularly, the both ends of main gate line 110 are provided with divergent electrode 113.
Particularly, in the present embodiment, use polycrystalline 156 size silicon chip, solar panel is the size of 156 × 156mm, and the graphics field that main gate line 110 and secondary grid line are formed is 153 × 153mm.The number of main gate line 110 is 4, and every bar main gate line 110 comprises 111,8,7 the first vacancy sections, 112,2, the second vacancy section divergent electrode 111, and main gate line 110 length is 153mm.First vacancy section 111 is 11mm along the length of main gate line 110 length direction, and the second vacancy section 112 is 8mm along the length of main gate line 110 length direction, and the divergent electrode 111 that the two ends of main gate line 110 are arranged is 6mm along the length of main gate line 110 length direction.The width of main gate line 110 is 1.2mm, and the width in sideline 1110 is 0.2mm.The length of first point every section secondary grid line 121 is 18mm, adjacent two sections first point secondary grid line 121 be spaced apart 3mm.
The electrode structure at right side 10 of crystal silicon solar batteries in the present embodiment and the existing electrode structure at right side shown in Fig. 4 is adopted to be made into crystal silicon solar batteries, contrast finds, adopt the electrode structure at right side 10 of the crystal silicon solar batteries in the present embodiment to be made into crystal silicon solar batteries conversion efficiency and improve 0.32%, silver slurry unit consumption declines 4.35%.Experimental result illustrates, the electrode structure at right side 10 of above-mentioned crystal silicon solar batteries reduces electrode silver plasm printing unit consumption, decreases production cost, improves cell piece performance simultaneously.
A kind of crystal silicon solar batteries, comprises the electrode structure at right side 10 of above-mentioned crystal silicon solar batteries.Above-mentioned crystal silicon solar batteries, secondary grid line adopts segmental structure, not only reduces the shading-area of electrode to greatest extent, and improves current collection efficiency.In addition above-mentioned crystal silicon solar batteries uses conventional batteries technological process manufacture, completely compatible with existing equipment, does not increase new equipment, reduces production cost, improves production efficiency.
Upper described embodiment only have expressed several execution mode of the present utility model, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the utility model the scope of the claims.It should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise utility, can also make some distortion and improvement, these all belong to protection range of the present utility model.Therefore, the protection range of the utility model patent should be as the criterion with claims.
Claims (10)
1. the electrode structure at right side of a crystal silicon solar batteries, it is characterized in that, comprise many main gate line and secondary grid line, many described main gate line is arranged in parallel, described secondary grid line comprises the first secondary grid line, many described first secondary grid line is arranged in parallel, described first secondary grid line is connected with described main gate line is substantially vertical, described first secondary grid line comprises multistage first point of secondary grid line, described in multistage, first point of secondary grid line arranges along the direction perpendicular to described main gate line, the hop count of described first point of secondary grid line is equal with the number of described main gate line, and every section of described first point of secondary grid line is all substantially vertical with described main gate line is connected.
2. the electrode structure at right side of crystal silicon solar batteries according to claim 1, is characterized in that, described secondary grid line also comprises the second secondary grid line; Described first point of secondary grid line be not when the marginal position of the electrode structure at right side of described crystal silicon solar batteries, adjacent two described first point secondary grid lines connect in the same side by described second secondary grid line, and described in every bar, first point of secondary grid line is connected with adjacent two described first point secondary grid lines respectively by described second secondary grid line.
3. the electrode structure at right side of crystal silicon solar batteries according to claim 2, it is characterized in that, described first point of secondary grid line is when the marginal position of the electrode structure at right side of described crystal silicon solar batteries, and every adjacent two described first point secondary grid lines only connect in the marginal position side of the electrode structure at right side away from described crystal silicon solar batteries by described second secondary grid line.
4. the electrode structure at right side of crystal silicon solar batteries according to claim 3, is characterized in that, the described second secondary grid line of one end that adjacent two sections described first point secondary grid lines are close is dislocation at described main gate line bearing of trend.
5. the electrode structure at right side of the crystal silicon solar batteries according to Claims 2 or 3, is characterized in that, described second secondary grid line is semicircle.
6. the electrode structure at right side of crystal silicon solar batteries according to claim 1, is characterized in that, described first point of secondary grid line is four sections, and described main gate line is four.
7. the electrode structure at right side of crystal silicon solar batteries according to claim 1, is characterized in that, described main gate line comprises slurry Printing Zone and the first vacancy section, and described first vacancy section is rectangle vacancy section.
8. the electrode structure at right side of crystal silicon solar batteries according to claim 7, is characterized in that, described main gate line also comprises the second vacancy section, and described second vacancy section to be disposed on described in adjacent two between first vacancy section.
9. the electrode structure at right side of crystal silicon solar batteries according to claim 8, is characterized in that, described second vacancy section is round dot vacancy section, and described round dot vacancy section is point row's parallel arrangement, and the described round dot hollow out dislocation arrangement of adjacent rows.
10. a crystal silicon solar batteries, is characterized in that, comprises the electrode structure at right side of the crystal silicon solar batteries described in any one of claim 1 ~ 9.
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| CN201520080767.XU CN204441295U (en) | 2015-02-04 | 2015-02-04 | The electrode structure at right side of crystal silicon solar batteries and crystal silicon solar batteries |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106340547A (en) * | 2016-08-31 | 2017-01-18 | 浙江尚越新能源开发有限公司 | Welding structure and method for reducing cost of photovoltaic cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106340547A (en) * | 2016-08-31 | 2017-01-18 | 浙江尚越新能源开发有限公司 | Welding structure and method for reducing cost of photovoltaic cell |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150701 Termination date: 20210204 |