CN204392097U - A kind of high frequency conversion oscillatory system based on Linear Driving - Google Patents
A kind of high frequency conversion oscillatory system based on Linear Driving Download PDFInfo
- Publication number
- CN204392097U CN204392097U CN201420738436.6U CN201420738436U CN204392097U CN 204392097 U CN204392097 U CN 204392097U CN 201420738436 U CN201420738436 U CN 201420738436U CN 204392097 U CN204392097 U CN 204392097U
- Authority
- CN
- China
- Prior art keywords
- triode
- resistance
- circuit
- emitter
- transformer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The utility model discloses a kind of high frequency conversion oscillatory system based on Linear Driving, it is characterized in that: by transformer T1, transformer T2, oscillating circuit, the linear drive circuit be connected with oscillating circuit, the micro-processor interface circuit be connected with linear drive circuit, the mixting circuit be connected with transformer T1 secondary, the first change-over circuit be connected with mixting circuit, the treatment circuit be simultaneously connected with the first change-over circuit with mixting circuit, the second change-over circuit be connected with treatment circuit output forms; The former limit of described transformer T2 is connected with the second change-over circuit, and the former limit of transformer T1 is connected with micro-processor interface circuit; Described linear drive circuit by driving chip U, triode Q7, triode Q8, triode Q9, the compositions such as triode Q10.The utility model adopts Linear Driving, and it while raising oscillatory system operating frequency, can also protect good stability.
Description
Technical field
The utility model relates to a kind of oscillatory system, specifically refers to a kind of high frequency conversion oscillatory system based on Linear Driving.
Background technology
Along with the development of communication, oscillator is widely used in the communication equipments such as radio broadcasting, however current oscillatory system the operating frequency that is suitable for not high, this just limits the working range of oscillatory system greatly.
Utility model content
The purpose of this utility model be to overcome current oscillatory system the not high defect of the operating frequency that is suitable for, a kind of high frequency conversion oscillatory system based on Linear Driving gone under high-frequency conversion environment is provided.
The following technical scheme of the purpose of this utility model realizes: a kind of high frequency conversion oscillatory system based on Linear Driving, by transformer T1, transformer T2, oscillating circuit, the linear drive circuit be connected with oscillating circuit, the micro-processor interface circuit be connected with linear drive circuit, the mixting circuit be connected with transformer T1 secondary, the first change-over circuit be connected with mixting circuit, the treatment circuit be simultaneously connected with the first change-over circuit with mixting circuit, the second change-over circuit be connected with treatment circuit output forms, the former limit of described transformer T2 is connected with the second change-over circuit, and the former limit of transformer T1 is connected with micro-processor interface circuit, described linear drive circuit is by driving chip U, triode Q7, triode Q8, triode Q9, triode Q10, positive pole is connected with oscillating circuit, the polar capacitor C9 that negative pole is connected with the IN1 pin of driving chip U after resistance R13, one end is connected with the collector electrode of triode Q7, the resistance R14 that the other end is connected with the base stage of triode Q9 after resistance R15, positive pole is connected with the base stage of triode Q7, the polar capacitor C10 that negative pole is connected with the IN1 pin of driving chip U, positive pole is connected with the IN2 pin of driving chip U, the polar capacitor C11 of minus earth, one end is connected with the emitter of triode Q7, the resistance R17 that the other end is connected with the base stage of triode Q8, one end is connected with the base stage of triode Q8, the resistance R16 that the other end is connected with the base stage of triode Q9, N pole is connected with the collector electrode of triode Q7, the diode D1 that P pole is connected with the collector electrode of triode Q8, positive terminal is connected with the collector electrode of triode Q7, the not gate Y that end of oppisite phase is connected with triode Q10 collector electrode, one end is connected with triode Q10 emitter, the resistance R19 that the other end is connected with the emitter of triode Q9 after resistance R18, the end of oppisite phase of P pole NAND gate K is connected, the diode D2 that N pole is connected with the tie point of resistance R19 with resistance R18 forms, the VCC pin of described driving chip U is connected with the base stage of triode Q7, END pin ground connection, OUT pin are connected with the collector electrode of triode Q8, the collector electrode of triode Q8 is also connected with the base stage of triode Q10, its emitter is connected with the base stage of triode man Q9, the grounded collector of triode Q9, the N pole of diode D2 is connected with micro-processor interface circuit.
Described described oscillating circuit is by oscillistor T, triode Q1, triode Q2, the resistance R1 that one end is connected with the base stage of triode Q1, the other end is connected with the collector electrode of triode Q1 after resistance R2, positive pole is connected with the base stage of triode Q1, the polar capacitor C1 of minus earth, one end is connected with the emitter of triode Q1, the resistance R3 of other end ground connection, and the polar capacitor C2 between the emitter and collector being serially connected in triode Q1 forms; Between the base stage that the two ends of described oscillistor T are serially connected in triode Q1 and collector electrode, the base stage of triode Q2 is connected with triode Q1 collector electrode, grounded emitter, collector electrode are then connected with the positive pole of electric capacity C9, and resistance R1 is connected with micro-processor interface circuit with the tie point of resistance R2.
Described microprocessor comprises resistance R4, resistance R5, resistance R6, and triode Q3; One end of resistance R4 is connected with the collector electrode of triode Q3, other end ground connection after resistance R5, and one end of resistance R6 is connected with the emitter of triode Q3, other end ground connection; The base stage of described triode Q3 simultaneously with resistance R4 with the tie point of resistance R5 and the N pole of diode D2 is connected, its collector electrode is then connected with the tie point of resistance R2 with resistance R1, its emitter is also connected with non-same polarity with the Same Name of Ends on the former limit of transformer T1.
Described mixting circuit is by dual-gate field-effect pipe K, resistance R7, resistance R9, and inductance L 1 forms; One end of resistance R7 is connected with a grid of dual-gate field-effect pipe K, other end ground connection, the drain electrode that one end of inductance L 1 is connected with the drain electrode of field effect transistor K, the other end gets back to field effect transistor K after resistance R9; The tie point of resistance R9 and inductance L 1 is connected with the first change-over circuit with treatment circuit simultaneously, the b grid of field effect transistor K is connected with transformer T1 secondary non-same polarity, drain be connected with treatment circuit, source electrode is connected with the first change-over circuit.
The first described change-over circuit is by triode Q4, the resistance R8 that one end is connected with the emitter of triode Q4, the other end is connected with the source electrode of dual-gate field-effect pipe K, the polar capacitor C3 be in parallel with resistance R8, the polar capacitor C4 that negative pole is connected with the tie point of inductance L 1 with resistance R9, positive pole is connected with the collector electrode of triode Q4 forms; The base stage of described triode Q4 is connected with the non-same polarity on the former limit of transformer T1, and its emitter is connected with treatment circuit.
Described treatment circuit is by triode Q5, triode Q6, the resistance R10 that one end is connected with the base stage of triode Q6, the other end is connected with the emitter of triode Q4, the resistance R11 that one end is connected with the emitter of triode Q6, the other end is connected with emitter and second change-over circuit of triode Q4 simultaneously forms; The base stage of described triode Q6 is connected with the emitter of triode Q5, its collector electrode is connected with the Same Name of Ends on the former limit of transformer T2, emitter is connected with the second change-over circuit, and the base stage of triode Q5 is connected with the tie point of inductance L 1 with resistance R9, its collector electrode is connected with the drain electrode of field effect transistor K and the second change-over circuit simultaneously.
The second described change-over circuit comprises polar capacitor C8, polar capacitor C7, polar capacitor C6, polar capacitor C5, resistance R12; The positive pole of polar capacitor C8 is connected with transformer T2 former limit Same Name of Ends, its negative pole is connected with the collector electrode of triode Q5, the positive pole of polar capacitor C7 is connected with non-same polarity with the Same Name of Ends on the former limit of transformer T2 respectively with negative pole, the positive pole of polar capacitor C6 is connected with the emitter of triode Q6, negative pole is connected with the non-same polarity on the former limit of transformer T2, the positive pole of polar capacitor C5 is connected with the emitter of triode Q4, its negative pole is then connected with the negative pole of polar capacitor C6 after resistance R12, described transformer T1 and the equal ground connection of transformer T2 secondary Same Name of Ends.
Described driving chip U is LM387 integrated chip.
The utility model compared with prior art, has the following advantages and beneficial effect:
(1) the utility model can improve the operating frequency of oscillatory system greatly, makes its range of application wider.
(2) the utility model adopts the design of dual-gate field-effect pipe, makes oscillatory system work more stable.
(3) the utility model adopts Linear Driving, and it while raising oscillatory system operating frequency, can also protect good stability.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present utility model.
Fig. 2 is the structural representation of the utility model linear drive circuit.
Embodiment
Below in conjunction with specific embodiment, the utility model is described in further detail, but execution mode of the present utility model is not limited thereto.
Embodiment
As shown in Figure 1, high frequency conversion oscillatory system based on Linear Driving of the present utility model, by transformer T1, transformer T2, oscillating circuit, the linear drive circuit be connected with oscillating circuit, the micro-processor interface circuit be connected with linear drive circuit, the mixting circuit be connected with transformer T1 secondary, the first change-over circuit be connected with mixting circuit, the treatment circuit be simultaneously connected with the first change-over circuit with mixting circuit, the second change-over circuit be connected with treatment circuit output forms; The former limit of described transformer T2 is connected with the second change-over circuit, and the former limit of transformer T1 is connected with micro-processor interface circuit.
As shown in Figure 2, described linear drive circuit is by driving chip U, triode Q7, triode Q8, triode Q9, triode Q10, positive pole is connected with oscillating circuit, the polar capacitor C9 that negative pole is connected with the IN1 pin of driving chip U after resistance R13, one end is connected with the collector electrode of triode Q7, the resistance R14 that the other end is connected with the base stage of triode Q9 after resistance R15, positive pole is connected with the base stage of triode Q7, the polar capacitor C10 that negative pole is connected with the IN1 pin of driving chip U, positive pole is connected with the IN2 pin of driving chip U, the polar capacitor C11 of minus earth, one end is connected with the emitter of triode Q7, the resistance R17 that the other end is connected with the base stage of triode Q8, one end is connected with the base stage of triode Q8, the resistance R16 that the other end is connected with the base stage of triode Q9, N pole is connected with the collector electrode of triode Q7, the diode D1 that P pole is connected with the collector electrode of triode Q8, positive terminal is connected with the collector electrode of triode Q7, the not gate Y that end of oppisite phase is connected with triode Q10 collector electrode, one end is connected with triode Q10 emitter, the resistance R19 that the other end is connected with the emitter of triode Q9 after resistance R18, the end of oppisite phase of P pole NAND gate K is connected, the diode D2 that N pole is connected with the tie point of resistance R19 with resistance R18 forms, the VCC pin of described driving chip U is connected with the base stage of triode Q7, END pin ground connection, OUT pin are connected with the collector electrode of triode Q8, the collector electrode of triode Q8 is also connected with the base stage of triode Q10, its emitter is connected with the base stage of triode man Q9, the grounded collector of triode Q9, the N pole of diode D2 is connected with micro-processor interface circuit.Linear Driving, it while raising oscillatory system operating frequency, can also protect good stability.In order to ensure implementation result, described driving chip U is preferably LM387 integrated chip, its highly sensitive and low price.
Described described oscillating circuit is by oscillistor T, triode Q1, triode Q2, the resistance R1 that one end is connected with the base stage of triode Q1, the other end is connected with the collector electrode of triode Q1 after resistance R2, positive pole is connected with the base stage of triode Q1, the polar capacitor C1 of minus earth, one end is connected with the emitter of triode Q1, the resistance R3 of other end ground connection, and the polar capacitor C2 between the emitter and collector being serially connected in triode Q1 forms; Between the base stage that the two ends of described oscillistor T are serially connected in triode Q1 and collector electrode, the base stage of triode Q2 is connected with triode Q1 collector electrode, grounded emitter, collector electrode are then connected with the positive pole of electric capacity C9, and resistance R1 is connected with micro-processor interface circuit with the tie point of resistance R2.
Described microprocessor comprises resistance R4, resistance R5, resistance R6, and triode Q3; One end of resistance R4 is connected with the collector electrode of triode Q3, other end ground connection after resistance R5, and one end of resistance R6 is connected with the emitter of triode Q3, other end ground connection; The base stage of described triode Q3 simultaneously with resistance R4 with the tie point of resistance R5 and the N pole of diode D2 is connected, its collector electrode is then connected with the tie point of resistance R2 with resistance R1, its emitter is also connected with non-same polarity with the Same Name of Ends on the former limit of transformer T1.
Described mixting circuit is by dual-gate field-effect pipe K, resistance R7, resistance R9, and inductance L 1 forms; One end of resistance R7 is connected with a grid of dual-gate field-effect pipe K, other end ground connection, the drain electrode that one end of inductance L 1 is connected with the drain electrode of field effect transistor K, the other end gets back to field effect transistor K after resistance R9; The tie point of resistance R9 and inductance L 1 is connected with the first change-over circuit with treatment circuit simultaneously, the b grid of field effect transistor K is connected with transformer T1 secondary non-same polarity, drain be connected with treatment circuit, source electrode is connected with the first change-over circuit.
The first described change-over circuit is by triode Q4, the resistance R8 that one end is connected with the emitter of triode Q4, the other end is connected with the source electrode of dual-gate field-effect pipe K, the polar capacitor C3 be in parallel with resistance R8, the polar capacitor C4 that negative pole is connected with the tie point of inductance L 1 with resistance R9, positive pole is connected with the collector electrode of triode Q4 forms; The base stage of described triode Q4 is connected with the non-same polarity on the former limit of transformer T1, and its emitter is connected with treatment circuit.
Described treatment circuit is by triode Q5, triode Q6, the resistance R10 that one end is connected with the base stage of triode Q6, the other end is connected with the emitter of triode Q4, the resistance R11 that one end is connected with the emitter of triode Q6, the other end is connected with emitter and second change-over circuit of triode Q4 simultaneously forms; The base stage of described triode Q6 is connected with the emitter of triode Q5, its collector electrode is connected with the Same Name of Ends on the former limit of transformer T2, emitter is connected with the second change-over circuit, and the base stage of triode Q5 is connected with the tie point of inductance L 1 with resistance R9, its collector electrode is connected with the drain electrode of field effect transistor K and the second change-over circuit simultaneously.
The second described change-over circuit comprises polar capacitor C8, polar capacitor C7, polar capacitor C6, polar capacitor C5, resistance R12; The positive pole of polar capacitor C8 is connected with transformer T2 former limit Same Name of Ends, its negative pole is connected with the collector electrode of triode Q5, the positive pole of polar capacitor C7 is connected with non-same polarity with the Same Name of Ends on the former limit of transformer T2 respectively with negative pole, the positive pole of polar capacitor C6 is connected with the emitter of triode Q6, negative pole is connected with the non-same polarity on the former limit of transformer T2, the positive pole of polar capacitor C5 is connected with the emitter of triode Q4, its negative pole is then connected with the negative pole of polar capacitor C6 after resistance R12, described transformer T1 and the equal ground connection of transformer T2 secondary Same Name of Ends.
As mentioned above, just well the utility model can be realized.
Claims (8)
1. the high frequency conversion oscillatory system based on Linear Driving, it is characterized in that: by transformer T1, transformer T2, oscillating circuit, the linear drive circuit be connected with oscillating circuit, the micro-processor interface circuit be connected with linear drive circuit, the mixting circuit be connected with transformer T1 secondary, the first change-over circuit be connected with mixting circuit, the treatment circuit be simultaneously connected with the first change-over circuit with mixting circuit, the second change-over circuit be connected with treatment circuit output forms, the former limit of described transformer T2 is connected with the second change-over circuit, and the former limit of transformer T1 is connected with micro-processor interface circuit, described linear drive circuit is by driving chip U, triode Q7, triode Q8, triode Q9, triode Q10, positive pole is connected with oscillating circuit, the polar capacitor C9 that negative pole is connected with the IN1 pin of driving chip U after resistance R13, one end is connected with the collector electrode of triode Q7, the resistance R14 that the other end is connected with the base stage of triode Q9 after resistance R15, positive pole is connected with the base stage of triode Q7, the polar capacitor C10 that negative pole is connected with the IN1 pin of driving chip U, positive pole is connected with the IN2 pin of driving chip U, the polar capacitor C11 of minus earth, one end is connected with the emitter of triode Q7, the resistance R17 that the other end is connected with the base stage of triode Q8, one end is connected with the base stage of triode Q8, the resistance R16 that the other end is connected with the base stage of triode Q9, N pole is connected with the collector electrode of triode Q7, the diode D1 that P pole is connected with the collector electrode of triode Q8, positive terminal is connected with the collector electrode of triode Q7, the not gate Y that end of oppisite phase is connected with triode Q10 collector electrode, one end is connected with triode Q10 emitter, the resistance R19 that the other end is connected with the emitter of triode Q9 after resistance R18, the end of oppisite phase of P pole NAND gate K is connected, the diode D2 that N pole is connected with the tie point of resistance R19 with resistance R18 forms, the VCC pin of described driving chip U is connected with the base stage of triode Q7, END pin ground connection, OUT pin are connected with the collector electrode of triode Q8, the collector electrode of triode Q8 is also connected with the base stage of triode Q10, its emitter is connected with the base stage of triode man Q9, the grounded collector of triode Q9, the N pole of diode D2 is connected with micro-processor interface circuit.
2. a kind of high frequency conversion oscillatory system based on Linear Driving according to claim 1, it is characterized in that: described described oscillating circuit is by oscillistor T, triode Q1, triode Q2, one end is connected with the base stage of triode Q1, the resistance R1 that the other end is connected with the collector electrode of triode Q1 after resistance R2, positive pole is connected with the base stage of triode Q1, the polar capacitor C1 of minus earth, one end is connected with the emitter of triode Q1, the resistance R3 of other end ground connection, polar capacitor C2 between the emitter and collector being serially connected in triode Q1 forms, between the base stage that the two ends of described oscillistor T are serially connected in triode Q1 and collector electrode, the base stage of triode Q2 is connected with triode Q1 collector electrode, grounded emitter, collector electrode are then connected with the positive pole of electric capacity C9, and resistance R1 is connected with micro-processor interface circuit with the tie point of resistance R2.
3. a kind of high frequency conversion oscillatory system based on Linear Driving according to claim 2, is characterized in that: described microprocessor comprises resistance R4, resistance R5, resistance R6, and triode Q3; One end of resistance R4 is connected with the collector electrode of triode Q3, other end ground connection after resistance R5, and one end of resistance R6 is connected with the emitter of triode Q3, other end ground connection; The base stage of described triode Q3 simultaneously with resistance R4 with the tie point of resistance R5 and the N pole of diode D2 is connected, its collector electrode is then connected with the tie point of resistance R2 with resistance R1, its emitter is also connected with non-same polarity with the Same Name of Ends on the former limit of transformer T1.
4. a kind of high frequency conversion oscillatory system based on Linear Driving according to claim 3, is characterized in that: described mixting circuit is by dual-gate field-effect pipe K, resistance R7, resistance R9, and inductance L 1 forms; One end of resistance R7 is connected with a grid of dual-gate field-effect pipe K, other end ground connection, the drain electrode that one end of inductance L 1 is connected with the drain electrode of field effect transistor K, the other end gets back to field effect transistor K after resistance R9; The tie point of resistance R9 and inductance L 1 is connected with the first change-over circuit with treatment circuit simultaneously, the b grid of field effect transistor K is connected with transformer T1 secondary non-same polarity, drain be connected with treatment circuit, source electrode is connected with the first change-over circuit.
5. a kind of high frequency conversion oscillatory system based on Linear Driving according to claim 4, it is characterized in that: the first described change-over circuit is by triode Q4, the resistance R8 that one end is connected with the emitter of triode Q4, the other end is connected with the source electrode of dual-gate field-effect pipe K, the polar capacitor C3 be in parallel with resistance R8, the polar capacitor C4 that negative pole is connected with the tie point of inductance L 1 with resistance R9, positive pole is connected with the collector electrode of triode Q4 forms; The base stage of described triode Q4 is connected with the non-same polarity on the former limit of transformer T1, and its emitter is connected with treatment circuit.
6. a kind of high frequency conversion oscillatory system based on Linear Driving according to claim 5, it is characterized in that: described treatment circuit is by triode Q5, triode Q6, the resistance R10 that one end is connected with the base stage of triode Q6, the other end is connected with the emitter of triode Q4, the resistance R11 that one end is connected with the emitter of triode Q6, the other end is connected with emitter and second change-over circuit of triode Q4 simultaneously forms; The base stage of described triode Q6 is connected with the emitter of triode Q5, its collector electrode is connected with the Same Name of Ends on the former limit of transformer T2, emitter is connected with the second change-over circuit, and the base stage of triode Q5 is connected with the tie point of inductance L 1 with resistance R9, its collector electrode is connected with the drain electrode of field effect transistor K and the second change-over circuit simultaneously.
7. a kind of high frequency conversion oscillatory system based on Linear Driving according to claim 6, is characterized in that: the second described change-over circuit comprises polar capacitor C8, polar capacitor C7, polar capacitor C6, polar capacitor C5, resistance R12; The positive pole of polar capacitor C8 is connected with transformer T2 former limit Same Name of Ends, its negative pole is connected with the collector electrode of triode Q5, the positive pole of polar capacitor C7 is connected with non-same polarity with the Same Name of Ends on the former limit of transformer T2 respectively with negative pole, the positive pole of polar capacitor C6 is connected with the emitter of triode Q6, negative pole is connected with the non-same polarity on the former limit of transformer T2, the positive pole of polar capacitor C5 is connected with the emitter of triode Q4, its negative pole is then connected with the negative pole of polar capacitor C6 after resistance R12, described transformer T1 and the equal ground connection of transformer T2 secondary Same Name of Ends.
8. a kind of high frequency conversion oscillatory system based on Linear Driving according to any one of claim 1 ~ 7, is characterized in that: described driving chip U is LM387 integrated chip.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420738436.6U CN204392097U (en) | 2014-11-29 | 2014-11-29 | A kind of high frequency conversion oscillatory system based on Linear Driving |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420738436.6U CN204392097U (en) | 2014-11-29 | 2014-11-29 | A kind of high frequency conversion oscillatory system based on Linear Driving |
Publications (1)
Publication Number | Publication Date |
---|---|
CN204392097U true CN204392097U (en) | 2015-06-10 |
Family
ID=53364777
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201420738436.6U Expired - Fee Related CN204392097U (en) | 2014-11-29 | 2014-11-29 | A kind of high frequency conversion oscillatory system based on Linear Driving |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN204392097U (en) |
-
2014
- 2014-11-29 CN CN201420738436.6U patent/CN204392097U/en not_active Expired - Fee Related
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104967408A (en) | Band-pass filtering oscillation system based on step-down type constant current circuit | |
CN204392097U (en) | A kind of high frequency conversion oscillatory system based on Linear Driving | |
CN104407549A (en) | Phase-shift high-frequency conversion oscillatory system | |
CN204314654U (en) | A kind of phase shift high frequency conversion oscillatory system | |
CN104467454A (en) | High-frequency conversion oscillating system based on linear driving | |
CN204334543U (en) | Based on the voltage controlled oscillator of Linear Driving | |
CN204316344U (en) | A kind of high-frequency conversion oscillatory system | |
CN204335051U (en) | A kind of raster data model system based on beam excitation and virtual protection formula | |
CN104485804A (en) | Novel logic protection emitter coupling type gate driving system | |
CN204316361U (en) | A kind of high-power triggering booster circuit based on phase shift process | |
CN104967330A (en) | High-frequency conversion demodulation system based on surge current limiting type low heat | |
CN204316811U (en) | A kind of raster data model system of logic-based protection amplifying circuit | |
CN204316796U (en) | A kind of energy-saving power amplification formula raster data model system | |
CN204316738U (en) | Based on phase shift process from gain wide region audio frequency processing system | |
CN204305404U (en) | Based on the raster data model system of beam excitation formula switch power amplifying circuit | |
CN204316346U (en) | Based on the monolithic crystalline substance control conversion oscillatory system of phase shift process | |
CN204304798U (en) | A kind of high-frequency converter | |
CN204334518U (en) | A kind of wire harness winding inserter drive system based on phase shift high capacity | |
CN204316313U (en) | A kind of new logic protection emitter-base bandgap grading manifold type raster data model system | |
CN104467447A (en) | Low-noise high-frequency converter | |
CN204334528U (en) | A kind of high capacity wire harness winding inserter system based on Linear Driving | |
CN204190705U (en) | A kind of voltage controlled oscillator | |
CN104410286A (en) | High-frequency converter | |
CN204316791U (en) | A kind of power amplification formula raster data model system | |
CN204392090U (en) | A kind of high-power triggering booster circuit based on Linear Driving |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150610 Termination date: 20161129 |
|
CF01 | Termination of patent right due to non-payment of annual fee |