CN204376853U - A kind of asymmetrical Digital Microwave attenuator circuit - Google Patents
A kind of asymmetrical Digital Microwave attenuator circuit Download PDFInfo
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- CN204376853U CN204376853U CN201520057217.6U CN201520057217U CN204376853U CN 204376853 U CN204376853 U CN 204376853U CN 201520057217 U CN201520057217 U CN 201520057217U CN 204376853 U CN204376853 U CN 204376853U
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Abstract
The utility model discloses a kind of asymmetrical Digital Microwave attenuator circuit, comprise voltage control unit, microwave input unit, microwave output unit.Two microwave paths are connected with between microwave input unit and microwave output unit, described two microwave paths adopt asymmetrical string and structure, wherein the first microwave path adopts the topological structure of two diodes in parallels, the topological structure that second microwave path adopts diode in series with a resistor, input by voltage control unit conducting or the isolation that a road positive voltage signal controls diode in two microwave paths, realizing circuit is conducting state or attenuation state.The utility model simplifies control circuit structure, reduces the impact of peripheral cell particularly inductance, simplifies technique, achieve road positive voltage (0/5V) signal controlling, be particularly conducive to the realization of monolithic integrated circuit.
Description
Technical field
The utility model relates to a kind of Digital Microwave attenuator circuit based on PIN diode, belongs to microwave monolithic integrated circuit field.
Background technology
In microwave communication system, often needing can by the Digital Microwave attenuator of the fixed attenuation amount of Digital Signals.The mode adopting PIN diode to realize mainly contains two kinds: a kind of is adopt discrete PIN diode, and the mode of hybrid circuit completes, and be characterized in that volume is large, working band is narrow, and control circuit is complicated.Another kind is the monolithic integrated circuit adopting PIN, has volume little, and application bandwidth, control circuit is complicated.
In above-mentioned traditional circuit, mostly adopt symmetrical circuit structure, usually need the voltage control signal on 2 tunnels or more, as needs one tunnel signal controlling, then need more additional circuit to change, be unfavorable for the miniaturization of circuit.
Need multiple inductance in traditional circuit, realize filtering, the functions such as direct current biasing, but the technique of inductance realizes more complicated, area is large, and Q value is low, inductance value and technique correlation high.Cause the microwave property impact of the change of inductance on circuit comparatively large, particularly in monolithic integrated circuit mmic chip.
Utility model content
Technical problem to be solved in the utility model is the defect for background technology, proposes a kind of Digital Microwave attenuator circuit based on PIN diode, adopts asymmetrical string and structure.Conducting state adopts parallel-connection structure, and decay state adopts cascaded structure, and circuit is simple, realizes a road positive voltage signal and controls.
The utility model is for solving the problems of the technologies described above by the following technical solutions:
A kind of asymmetrical Digital Microwave attenuator circuit, comprise voltage control unit, microwave input unit, microwave output unit, two microwave paths are connected with between microwave input unit and microwave output unit, described two microwave paths adopt asymmetrical string and structure, wherein the first microwave path adopts the topological structure of two diodes in parallels, the topological structure that second microwave path adopts diode in series with a resistor, the road positive voltage signal inputted by voltage control unit controls conducting or the isolation of diode in two microwave paths, realizing circuit is conducting state or attenuation state.
Further, asymmetrical Digital Microwave attenuator circuit of the present utility model, described microwave input unit comprises the microwave input port, the first electric capacity, the first transmission line that connect successively, and microwave output unit comprises the second transmission line, the second electric capacity and the microwave output that connect successively; Described two microwave paths are connected between the first transmission line and the second transmission line; Wherein,
First microwave path comprises the 3rd transmission line, the first diode, the second diode, the 4th transmission line, wherein: one end of the 3rd transmission line is connected with the first transmission line, the other end of the 3rd transmission line connects the first diode, the positive pole of the second diode and one end of the 4th transmission line respectively, and the other end of the 4th transmission line connects the second transmission line; The minus earth of described first diode, the second diode;
Second microwave path comprises the 3rd diode, the 5th transmission line, the first to the 3rd resistance, the 6th transmission line and the 4th diode, the 3rd electric capacity; Wherein: the negative pole of the 3rd diode connects the first transmission line, the positive pole of the 3rd diode is connected with one end of the first resistance through the 5th transmission line, the other end of the first resistance connects one end of the second resistance and the 3rd resistance respectively, the other end of the 3rd resistance is by the 3rd capacity earth, the other end of the second resistance is connected through the positive pole of the 6th transmission line with the 4th diode, and the negative pole of the 4th diode connects the second transmission line;
Voltage control unit comprises voltage controling end, the 4th resistance, the 4th electric capacity, the 7th transmission line, wherein: voltage controling end is connected with one end of the 4th resistance, one end of the 4th electric capacity respectively, the other end of the 4th resistance is connected to the common point of the first resistance, the second resistance, the 3rd resistance, the other end ground connection of described 4th electric capacity by the 7th transmission line.
Further, asymmetrical Digital Microwave attenuator circuit of the present utility model, described positive voltage signal is 0 V or 5V; When positive voltage signal is 0 V, circuit is conducting state, and when positive voltage signal is 5V, circuit is attenuation state.
Further, asymmetrical Digital Microwave attenuator circuit of the present utility model, first to fourth diode adopts GaAs material or Si material to make.
Further, asymmetrical Digital Microwave attenuator circuit of the present utility model, transmission line adopts GaAs monolithic integrated circuit processes.
Further, asymmetrical Digital Microwave attenuator circuit of the present utility model, the width of described the first to the second transmission line is 40um, and length is 50um; The width of described 3rd to the 4th transmission line is 40um, and length is 2500um; The width of described 5th to the 6th transmission line is 40um, and length is 100um; The width of described 7th transmission line is 10um, and length is 600um.
The utility model adopts above technical scheme compared with prior art, has following technique effect:
Attenuator of the present utility model adopts asymmetrical structure, and structure is simple, and components and parts are few.Particularly can omit inductance and not affect microwave property in biasing circuit.A positive control voltage just can realizing circuit handoff functionality.Biasing circuit, together with damping resistance network integration, reduces inductance or transmission line in biasing circuit and, on the impact of microwave branch road, improves circuit performance, improves the range of tolerable variance of technique and components and parts.
Positive voltage DC bias circuit and attenuator circuit combine, and simplify control circuit structure, reduce the impact of peripheral cell particularly inductance, improve the tolerance performance of technique, be particularly conducive to the realization of monolithic integrated circuit.
Circuit of the present utility model can adopt hybrid circuit mode to realize, and also realizes by IC regime, and the form performance of employing GaAs (GaAs) monolithic integrated circuit can be more obvious.
Accompanying drawing explanation
Fig. 1 is that the utility model is at electrical block diagram.
Wherein: MLIN-1 ~ MLIN-7: transmission line; PIN-1 ~ PIN-4: diode: C1, C2 are microwave capacitance respectively; C3 is the electric capacity in the second microwave path; C4 is the filter capacitor of voltage controling end; R1, R2, R3 are the first to the 3rd resistance in the second microwave path, and R4 is the 4th resistance (biased protective resistance).
Fig. 2 is the schematic diagram of integrated circuit mmic chip of the present utility model.
Embodiment
Be described below in detail execution mode of the present utility model, the example of described execution mode is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the execution mode be described with reference to the drawings, only for explaining the utility model, and can not being interpreted as restriction of the present utility model.
Those skilled in the art of the present technique are understandable that, unless otherwise defined, all terms used herein (comprising technical term and scientific terminology) have the meaning identical with the general understanding of the those of ordinary skill in field belonging to the utility model.Should also be understood that those terms defined in such as general dictionary should be understood to have the meaning consistent with the meaning in the context of prior art, unless and define as here, can not explain by idealized or too formal implication.
Below in conjunction with accompanying drawing, the technical solution of the utility model is described in further detail:
As shown in Figure 1, Fig. 1 is electrical block diagram of the present utility model:
Transmission line MLIN-1 ~ MLIN-7: adopt GaAs material or the processing of PCB medium version, its length and width determine according to operating frequency, dielectric constant, circuit performance optimal design.Length required when also will consider physical connection between each element in monolithic integrated circuit.
Diode PIN-1 ~ PIN-4: adopt GaAs material or Si material to make, can be integrated in chip circuit, also can adopt discrete component.In microwave path one, diode PIN-1, PIN-2 show as and are parallel to ground.In microwave path two, diode PIN-3, PIN-4 show as and are connected in series.
Microwave capacitance C1, C2, its capacitance is chosen according to operating frequency and circuit performance, can be integrated in chip circuit, also can adopt discrete component.
Electric capacity C3 is used for providing microwave to arrive ground path, and its capacitance is chosen according to operating frequency and circuit performance, can be integrated in chip circuit, also can adopt discrete component.
Electric capacity C4 is the filter capacitor of control end, and its capacitance is chosen according to operating frequency and circuit performance, can be integrated in chip circuit, also can adopt discrete component.
Resistance R1, R2, R3 form attenuation network, and R4 is biased protective resistance, can be integrated in chip circuit, also can adopt discrete component.
Asymmetric Digital Microwave attenuator circuit of the present utility model is that single positive supply Vcon controls, and adopts asymmetrical string and structure, and conducting state adopts parallel-connection structure, and decay state adopts cascaded structure, and circuit is simple, achieves road positive voltage (0/5V) signal controlling.Operating state is described below:
Circuit turn-on state: Vcon equals 0V.Circuit forms 2 DC loop to ground: first DC loop is followed successively by resistance R4, transmission line MLIN-7, resistance R1, transmission line MLIN-5, diode PIN-3, transmission line MLIN-3, diode PIN-1(PIN-2); Second DC loop is resistance R4, transmission line MLIN-7, resistance R2, transmission line MLIN-6, diode PIN-4, transmission line MLIN-4, diode PIN-1(PIN-2).
Because Vcon=0V, so the direct current (DC) bias on diode PIN-3, PIN-4, PIN-2, PIN-1 is 0V, the now parallel connection of a diode simple equivalence high resistant and junction capacitance.Therefore on diode PIN-3, transmission line MLIN-5, resistance R1, resistance R2, this microwave path of transmission line MLIN-6, diode PIN-4, diode is isolated state; Transmission line MLIN-3, diode PIN-1(PIN-2), diode is conducting state on this microwave path of transmission line MLIN-4.Whole attenuator circuit is conducting state.
Circuit decay state: Vcon equals 5V.Circuit forms 2 DC loop to ground: first DC loop is followed successively by resistance R4, transmission line MLIN-7, resistance R1, transmission line MLIN-5, diode PIN-3, transmission line MLIN-3, diode PIN-1(PIN-2); Second DC loop is followed successively by resistance R4, transmission line MLIN-7, resistance R2, transmission line MLIN-6, diode PIN-4, transmission line MLIN-4, diode PIN-1(PIN-2).
By regulating the size of R4, R1, R2 resistance, controlling the direct current (DC) bias of four diodes, making the direct current (DC) bias on PIN-3, PIN-4, PIN-2, PIN-1 diode be greater than its conducting voltage (according to the characteristic of diode used, voltage can difference to some extent).The now parallel connection of a diode simple equivalence low-resistance and junction capacitance.Therefore on diode PIN-3, transmission line MLIN-5, resistance R1, resistance R2, this microwave path of transmission line MLIN-6, diode PIN-4, diode is conducting state, and wherein resistance R1, resistance R2, resistance R3 form attenuation network.Transmission line MLIN-3, diode PIN-1(PIN-2), diode is isolated state on this microwave path of transmission line MLIN-4.Whole circuit is in decay state.
By the design of CAD, adjustment (R1, R2, R3) attenuation network, (MLIN-3, MLIN-4) transmission line and (PIN-1, PIN-2) diode parameters, can realize microwave frequency band, the requirement of required fixed attenuation amount.Wherein: transmission line MLIN-3, MLIN-4, mainly according to the operating frequency of circuit, carry out the Parameters Optimal Design such as length, width.Transmission line MLIN-1, MLIN-2, MLIN-5, MLIN-6, MLIN-7, mainly play physical connection effect.Designed by CAD, adjustment linear electrical parameter, optimized circuit performance.
As shown in Figure 2, be the schematic diagram of integrated circuit mmic chip of the present utility model.Adopt GaAs MMIC technology, die size: 1.2*1.7mm.In microwave band (8-11GHz), conducting state Insertion Loss is less than 1dB, decay state decay 31dB.Control voltage 0/5V, compatible TTL.
According to the feature of this circuit structure, little physical connection length can be adopted in CAD.But due to the requirement of integrated circuit diagram layout, length can lengthen, but less on the impact of circuit performance.
Embodiment 1:
Adopt the design of the attenuator monolithic integrated circuit of GaAs material.
According to the circuit structure principle of Fig. 1, carry out microwave CAD emulation, select width and the length of microstrip line, the size of control capacittance, resistance, to reach designing requirement.
Component parameters designs.
C1=C2=3pF，C3=5pF，C4=5pF。
R1=R2=45, R3=3 form attenuation network.R4=100?。
Transmission line adopts GaAs monolithic integrated circuit processes.The width 40um of MLIN-1, MLIN-2, long 50um.The width 40um of MLIN-3, MLIN-4, long 2500um.The width 40um of MLIN-5, MLIN-6, long 100um.The width 10um of MLIN-7, long 600um.
PIN-1 ~ PIN-4: diode: adopt GaAs monolithic integrated circuit processes, device breakdown 60V.
By above-mentioned requirements completing circuit topological structure, carry out laying out pattern according to circuit theory.As Fig. 2.
According to this circuit structure design, its control signal circuit eliminates inductance, substitutes with MLIN-7, and the length of transmission line on circuit performance impact little, can according to laying out pattern need determine.Therefore flexibility is large in the design.With reference to the design of the present embodiment, see the following form in the impact of frequency 10GHz, MLIN-7 length variations on performance.Visible influences is very little.
| Length variations | Conducting state | Decay state |
| 800um | -0.857dB | -33.27dB |
| 100um | -0.857dB | -33.26dB |
In this example, consider the factor of laying out pattern, the long 600um of transmission line MLIN-7.
The above is only some embodiments of the present utility model; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (6)
1. an asymmetrical Digital Microwave attenuator circuit, comprise voltage control unit, microwave input unit, microwave output unit, it is characterized in that: between microwave input unit and microwave output unit, be connected with two microwave paths, described two microwave paths adopt asymmetrical string and structure, wherein the first microwave path adopts the topological structure of two diodes in parallels, the topological structure that second microwave path adopts diode in series with a resistor, the road positive voltage signal inputted by voltage control unit controls conducting or the isolation of diode in two microwave paths, realizing circuit is conducting state or attenuation state.
2. asymmetrical Digital Microwave attenuator circuit according to claim 1, it is characterized in that: described microwave input unit comprises the microwave input port (RF-in), the first electric capacity (C1), the first transmission line (MLIN-1) that connect successively, microwave output unit comprises the second transmission line (MLIN-2), the second electric capacity (C2) and the microwave output (RF-out) that connect successively; Described two microwave paths are connected between the first transmission line (MLIN-1) and the second transmission line (MLIN-2); Wherein,
First microwave path comprises the 3rd transmission line (MLIN-3), the first diode (PIN-1), the second diode (PIN-2), the 4th transmission line (MLIN-4), wherein: one end of the 3rd transmission line (MLIN-3) is connected with the first transmission line (MLIN-1), the other end of the 3rd transmission line (MLIN-3) connects the first diode (PIN-1), the positive pole of the second diode (PIN-2) and one end of the 4th transmission line (MLIN-4) respectively, and the other end of the 4th transmission line (MLIN-4) connects the second transmission line (MLIN-2); The minus earth of described first diode (PIN-1), the second diode (PIN-2);
Second microwave path comprises the 3rd diode (PIN-3), the 5th transmission line (MLIN-5), the first to the 3rd resistance (R1, R2, R3), the 6th transmission line (MLIN-6) and the 4th diode (PIN-4), the 3rd electric capacity (C3), wherein: the negative pole of the 3rd diode (PIN-3) connects the first transmission line (MLIN-1), the positive pole of the 3rd diode (PIN-3) is connected with one end of the first resistance (R1) through the 5th transmission line (MLIN-5), the other end of the first resistance (R1) connects one end of the second resistance (R2) and the 3rd resistance (R3) respectively, the other end of the 3rd resistance (R3) is by the 3rd electric capacity (C3) ground connection, the other end of the second resistance (R2) is connected through the positive pole of the 6th transmission line (MLIN-6) with the 4th diode (PIN-4), the negative pole of the 4th diode (PIN-4) connects the second transmission line (MLIN-2),
Voltage control unit comprises voltage controling end (Vcon), the 4th resistance (R4), the 4th electric capacity (C4), the 7th transmission line (MLIN-7), wherein: voltage controling end (Vcon) is connected with one end of the 4th resistance (R4), one end of the 4th electric capacity (C4) respectively, the other end of the 4th resistance (R4) is connected to the common point of the first resistance (R1), the second resistance (R2), the 3rd resistance (R3), the other end ground connection of described 4th electric capacity (C4) by the 7th transmission line (MLIN-7).
3., according to the arbitrary described asymmetrical Digital Microwave attenuator circuit of claim 1 or 2, it is characterized in that: described positive voltage signal is 0 V or 5V; When positive voltage signal is 0 V, circuit is conducting state, and when positive voltage signal is 5V, circuit is attenuation state.
4. asymmetrical Digital Microwave attenuator circuit according to claim 2, is characterized in that: first to fourth diode adopts GaAs material or Si material to make.
5. asymmetrical Digital Microwave attenuator circuit according to claim 2, is characterized in that: transmission line adopts GaAs monolithic integrated circuit processes.
6. asymmetrical Digital Microwave attenuator circuit according to claim 5, is characterized in that: the width of described the first to the second transmission line is 40um, and length is 50um; The width of described 3rd to the 4th transmission line is 40um, and length is 2500um; The width of described 5th to the 6th transmission line is 40um, and length is 100um; The width of described 7th transmission line is 10um, and length is 600um.
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| CN104579236A (en) * | 2015-01-27 | 2015-04-29 | 南京国博电子有限公司 | Unsymmetrical microwave digital attenuator circuit and control method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104579236A (en) * | 2015-01-27 | 2015-04-29 | 南京国博电子有限公司 | Unsymmetrical microwave digital attenuator circuit and control method thereof |
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Address after: 210016 No.166, zhengfangzhong Road, moling street, Jiangning District, Nanjing City, Jiangsu Province Patentee after: Nanjing Guobo Electronics Co.,Ltd. Address before: 211111 No.166, zhengfangzhong Road, Jiangning Economic Development Zone, Nanjing, Jiangsu Province Patentee before: NANJING GUOBO ELECTRONICS Co.,Ltd. |