CN204316471U - A kind of beam excitation formula emitter-base bandgap grading is coupled asymmetric triggering system - Google Patents
A kind of beam excitation formula emitter-base bandgap grading is coupled asymmetric triggering system Download PDFInfo
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- CN204316471U CN204316471U CN201420716034.6U CN201420716034U CN204316471U CN 204316471 U CN204316471 U CN 204316471U CN 201420716034 U CN201420716034 U CN 201420716034U CN 204316471 U CN204316471 U CN 204316471U
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Abstract
The utility model discloses a kind of beam excitation formula emitter-base bandgap grading to be coupled asymmetric triggering system, primarily of the asymmetric circuit of emitter-base bandgap grading manifold type, and passive π type filter circuit composition, it is characterized in that, between the asymmetric circuit of emitter-base bandgap grading manifold type and passive π type filter circuit, be also serially connected with beam excitation formula logic amplifying circuit; This beam excitation formula logic amplifying circuit primarily of power amplifier P1, NAND gate IC1, NAND gate IC2, NAND gate IC3, the compositions such as negative pole is connected with the electrode input end of power amplifier P1, the polar capacitor C6 of positive pole ground connection after optical diode D1.The utility model overall structure is simple, and it makes and very easy to use.Meanwhile, stable performance of the present utility model, effectively can not only overcome external electromagnetic interference, and effectively can also prevent current break.
Description
Technical field
The utility model relates to a kind of circuits for triggering, specifically refers to that a kind of beam excitation formula emitter-base bandgap grading is coupled asymmetric triggering system.
Background technology
Circuits for triggering are that current people use wider a kind of circuit, and it is widely used in the field such as electronics, electric equipment.But, the circuits for triggering that current people use not only structure are comparatively complicated, and it is easily subject to external electromagnetic interference, especially when connected load changes by temperature reason, these traditional circuits for triggering just can demonstrate nonlinear operating state, larger current break can be produced, be unfavorable for the stable performance of connected Circuits System.
Utility model content
The purpose of this utility model is to overcome the easy generation current sudden change when external loading changes of current circuits for triggering, be unfavorable for the defect that Circuits System is stable, provide a kind of a kind of beam excitation formula emitter-base bandgap grading that effectively can overcome above-mentioned defect to be coupled asymmetric triggering system.
The purpose of this utility model is achieved through the following technical solutions: a kind of beam excitation formula emitter-base bandgap grading is coupled asymmetric triggering system, primarily of the asymmetric circuit of emitter-base bandgap grading manifold type, and passive π type filter circuit composition.Meanwhile, between the asymmetric circuit of emitter-base bandgap grading manifold type and passive π type filter circuit, beam excitation formula logic amplifying circuit is also serially connected with.This beam excitation formula logic amplifying circuit is primarily of power amplifier P1, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P1, the polar capacitor C6 of positive pole ground connection after optical diode D1, one end is connected with the positive pole of polar capacitor C6, the resistance R9 of other end ground connection after diode D2, positive pole is connected with the tie point of diode D2 with resistance R9, the polar capacitor C8 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R10 that the other end is connected with the electrode input end of power amplifier P1, be serially connected in the resistance R11 between the negative input of power amplifier P1 and output, one end is connected with the output of NAND gate IC1, the resistance R12 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the output of NAND gate IC2, the electric capacity C7 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C8, the resistance R13 that the other end is connected with the negative input of NAND gate IC2 forms, the electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P1, and its output is connected with the electrode input end of NAND gate IC2, and the electrode input end of NAND gate IC3 is connected with the output of power amplifier P1.
Described emitter-base bandgap grading manifold type Asymmetric Electric route triode Q1, triode Q2, triode Q3, be serially connected in the first-level filtering wave circuit between the emitter of triode Q2 and the base stage of triode Q3, be serially connected in the resistance R7 between the collector electrode of triode Q3 and the collector electrode of diode Q2, be serially connected in the resistance R3 between the collector electrode of triode Q1 and the collector electrode of triode Q2, be serially connected in the secondary filter circuit between the emitter of triode Q1 and the positive pole of polar capacitor C8, be serially connected in three grades of filters between the base stage of triode Q1 and the positive pole of polar capacitor C8, and the resistance R2 be serially connected between the base stage of triode Q1 and the positive pole of polar capacitor C8 and the resistance R6 be serially connected between the base stage of triode Q3 and the positive pole of polar capacitor C8 forms, the base stage of described triode Q2 is connected with the collector electrode of triode Q1, and its collector electrode is connected with the positive pole of polar capacitor C6, the emitter of described triode Q2 and the equal ground connection of emitter of triode Q3.
Further, described passive π type filtered electrical routing capacitance C1, electric capacity C2, and the resistance R8 be serially connected between the positive pole of electric capacity C1 and the positive pole of electric capacity C2 forms; The output of described NAND gate IC3 is connected with the positive pole of electric capacity C2, and its negative input is then connected with the negative pole of electric capacity C2; Positive pole and the negative pole of electric capacity C1 then form output.
For guaranteeing result of use of the present utility model, described electric capacity C1, electric capacity C2 are patch capacitor; Described first-level filtering wave circuit, secondary filter circuit and three grades of filter circuits are RC filter circuit.
The utility model compared with prior art, has the following advantages and beneficial effect:
(1) the utility model overall structure is simple, and it makes and very easy to use.
(2) stable performance of the present utility model, effectively can not only overcome external electromagnetic interference, and effectively can also prevent current break.
(3) the utility model contains multi-stage filter circuit, effectively can remove the impact of the multiple harmonic caused because of load variations.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the utility model is described in further detail, but execution mode of the present utility model is not limited thereto.
As shown in Figure 1, the utility model is primarily of the asymmetric circuit of emitter-base bandgap grading manifold type, passive π type filter circuit and beam excitation formula logic amplifying circuit composition.
Wherein, this beam excitation formula logic amplifying circuit is primarily of power amplifier P1, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P1, the polar capacitor C6 of positive pole ground connection after optical diode D1, one end is connected with the positive pole of polar capacitor C6, the resistance R9 of other end ground connection after diode D2, positive pole is connected with the tie point of diode D2 with resistance R9, the polar capacitor C8 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R10 that the other end is connected with the electrode input end of power amplifier P1, be serially connected in the resistance R11 between the negative input of power amplifier P1 and output, one end is connected with the output of NAND gate IC1, the resistance R12 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the output of NAND gate IC2, the electric capacity C7 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C8, the resistance R13 that the other end is connected with the negative input of NAND gate IC2 forms.
The electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P1, and its output is connected with the electrode input end of NAND gate IC2, and the electrode input end of NAND gate IC3 is connected with the output of power amplifier P1.
Described emitter-base bandgap grading manifold type Asymmetric Electric route triode Q1, triode Q2, triode Q3, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6, resistance R7, resistance R8 and electric capacity C3, electric capacity C4 and electric capacity C5 form.
Passive π type filter circuit is by electric capacity C1, electric capacity C2, and is serially connected in the low-pass filter circuit that the resistance R8 between the positive pole of electric capacity C1 and the positive pole of electric capacity C2 forms.According to the actual requirements, this passive π type filter circuit also can be high-pass filtering circuit.During connection, the negative pole of electric capacity C1 is connected with the negative pole of electric capacity C2, forms a loop to guarantee resistance R8, between electric capacity C1 and electric capacity C2.The positive pole of electric capacity C1 and negative pole then form output of the present utility model.For guaranteeing result of use, electric capacity C1 and electric capacity C2 is patch capacitor.
As shown in Figure 1, resistance R5 and electric capacity C3 is in parallel, and forms first-level filtering wave circuit; Resistance R4 and electric capacity C4 is in parallel, and forms secondary filter circuit; Resistance R1 and electric capacity C5 is in parallel, and forms three grades of filter circuits.
During connection, first-level filtering wave circuit is serially connected between the emitter of triode Q2 and the base stage of triode Q3, resistance R7 is serially connected between the collector electrode of triode Q3 and the collector electrode of diode Q2, resistance R3 is serially connected between the collector electrode of triode Q1 and the collector electrode of triode Q2, secondary filter circuit is then serially connected between the emitter of triode Q1 and the positive pole of polar capacitor C8, and three grades of filters are then serially connected between the base stage of triode Q1 and the positive pole of polar capacitor C8.
Described resistance R2 is serially connected between the base stage of triode Q1 and the positive pole of polar capacitor C8, and resistance R6 is then serially connected between the base stage of triode Q3 and the positive pole of polar capacitor C8.For guaranteeing result of use, the base stage of this triode Q2 is connected with the collector electrode of triode Q1, and its collector electrode is connected with the positive pole of polar capacitor C6, and its emitter is ground connection equal to the emitter of triode Q3 then.
As mentioned above, just the utility model can be realized preferably.
Claims (4)
1. a beam excitation formula emitter-base bandgap grading is coupled asymmetric triggering system, primarily of the asymmetric circuit of emitter-base bandgap grading manifold type, and passive π type filter circuit composition, it is characterized in that, between the asymmetric circuit of emitter-base bandgap grading manifold type and passive π type filter circuit, be also serially connected with beam excitation formula logic amplifying circuit, this beam excitation formula logic amplifying circuit is primarily of power amplifier P1, NAND gate IC1, NAND gate IC2, NAND gate IC3, negative pole is connected with the electrode input end of power amplifier P1, the polar capacitor C6 of positive pole ground connection after optical diode D1, one end is connected with the positive pole of polar capacitor C6, the resistance R9 of other end ground connection after diode D2, positive pole is connected with the tie point of diode D2 with resistance R9, the polar capacitor C8 of minus earth, one end is connected with the negative input of NAND gate IC1, the resistance R10 that the other end is connected with the electrode input end of power amplifier P1, be serially connected in the resistance R11 between the negative input of power amplifier P1 and output, one end is connected with the output of NAND gate IC1, the resistance R12 that the other end is connected with the negative input of NAND gate IC3, positive pole is connected with the output of NAND gate IC2, the electric capacity C7 that negative pole is connected with the negative input of NAND gate IC3, and one end is connected with the positive pole of polar capacitor C8, the resistance R13 that the other end is connected with the negative input of NAND gate IC2 forms, the electrode input end of described NAND gate IC1 is connected with the negative input of power amplifier P1, and its output is connected with the electrode input end of NAND gate IC2, and the electrode input end of NAND gate IC3 is connected with the output of power amplifier P1, described emitter-base bandgap grading manifold type Asymmetric Electric route triode Q1, triode Q2, triode Q3, be serially connected in the first-level filtering wave circuit between the emitter of triode Q2 and the base stage of triode Q3, be serially connected in the resistance R7 between the collector electrode of triode Q3 and the collector electrode of diode Q2, be serially connected in the resistance R3 between the collector electrode of triode Q1 and the collector electrode of triode Q2, be serially connected in the secondary filter circuit between the emitter of triode Q1 and the positive pole of polar capacitor C8, be serially connected in three grades of filters between the base stage of triode Q1 and the positive pole of polar capacitor C8, and the resistance R2 be serially connected between the base stage of triode Q1 and the positive pole of polar capacitor C8 and the resistance R6 be serially connected between the base stage of triode Q3 and the positive pole of polar capacitor C8 forms, the base stage of described triode Q2 is connected with the collector electrode of triode Q1, and its collector electrode is connected with the positive pole of polar capacitor C6, the emitter of described triode Q2 and the equal ground connection of emitter of triode Q3.
2. a kind of beam excitation formula emitter-base bandgap grading according to claim 1 is coupled asymmetric triggering system, it is characterized in that, described passive π type filtered electrical routing capacitance C1, electric capacity C2, and the resistance R8 be serially connected between the positive pole of electric capacity C1 and the positive pole of electric capacity C2 forms; The output of described NAND gate IC3 is connected with the positive pole of electric capacity C2, and its negative input is then connected with the negative pole of electric capacity C2; Positive pole and the negative pole of electric capacity C1 then form output.
3. a kind of beam excitation formula emitter-base bandgap grading according to claim 2 is coupled asymmetric triggering system, and it is characterized in that, described electric capacity C1, electric capacity C2 are patch capacitor.
4. a kind of beam excitation formula emitter-base bandgap grading according to claim 3 is coupled asymmetric triggering system, and it is characterized in that, described first-level filtering wave circuit, secondary filter circuit and three grades of filter circuits are RC filter circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420716034.6U CN204316471U (en) | 2014-11-25 | 2014-11-25 | A kind of beam excitation formula emitter-base bandgap grading is coupled asymmetric triggering system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420716034.6U CN204316471U (en) | 2014-11-25 | 2014-11-25 | A kind of beam excitation formula emitter-base bandgap grading is coupled asymmetric triggering system |
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| CN204316471U true CN204316471U (en) | 2015-05-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420716034.6U Expired - Fee Related CN204316471U (en) | 2014-11-25 | 2014-11-25 | A kind of beam excitation formula emitter-base bandgap grading is coupled asymmetric triggering system |
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| CN (1) | CN204316471U (en) |
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2014
- 2014-11-25 CN CN201420716034.6U patent/CN204316471U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150506 Termination date: 20151125 |