CN204311117U - A kind of device by reclaiming gallium in gan - Google Patents
A kind of device by reclaiming gallium in gan Download PDFInfo
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- CN204311117U CN204311117U CN201420736886.1U CN201420736886U CN204311117U CN 204311117 U CN204311117 U CN 204311117U CN 201420736886 U CN201420736886 U CN 201420736886U CN 204311117 U CN204311117 U CN 204311117U
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- silica tube
- gan
- gallium
- tube
- hydrogen pipeline
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
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Abstract
The utility model provides a kind of device by reclaiming gallium in gan, its make to reclaim from gan the technique of gallium simple, be applicable to dispose voluntarily in Semiconductor enterprises, reduce the material cost of enterprise.It comprises silica tube, the one end open of described silica tube, the other end are closed and are provided with the import of reducing gas pipeline, the outer ring surface of described silica tube is furnished with heating unit, the opening end position correspondence of described silica tube is furnished with ferrule structure, the exit end of described ferrule structure is circumscribed with pump-line, be placed with the waste material of nitrogen gallium in described silica tube under working order, described cutting ferrule seal cartridge is loaded on the opening end of described silica tube.
Description
Technical field
The utility model relates to the technical field that semiconductor waste material reclaims, and is specially a kind of device by reclaiming gallium in gan.
Background technology
The waste material that current semicon industry produces gan is rarely used in recovery and purifies out valuable gallium, directly committee is outer mostly disposes, and the method for the method centrally disposing or reclaim from other waste materials gallium acidolysis again after melting under also mostly adopting vacuum environment, its method is comparatively numerous and diverse, be unfavorable for disposing in Semiconductor enterprises, the production material cost of enterprise is high.
Summary of the invention
For the problems referred to above, the utility model provides a kind of device by reclaiming gallium in gan, its make to reclaim from gan the technique of gallium simple, be applicable to dispose voluntarily in Semiconductor enterprises, reduce the material cost of enterprise.
A kind of device by reclaiming gallium in gan, it is characterized in that: it comprises silica tube, the one end open of described silica tube, the other end are closed and are provided with hydrogen pipeline import, the outer ring surface of described silica tube is furnished with heating unit, the opening end position correspondence of described silica tube is furnished with ferrule structure, the exit end of described ferrule structure is circumscribed with pump-line, and be placed with the waste material of nitrogen gallium in the described silica tube under working order, described cutting ferrule seal cartridge is loaded on the opening end of described silica tube.
It is further characterized in that: described pump-line is furnished with evacuating valve, and described hydrogen pipeline import is circumscribed with hydrogen pipeline, and described hydrogen pipeline is furnished with hydrogen valve;
The opening end of the described silica tube under working order is inclined upwardly layout, and its angle of inclination is 30 ° ~ 35 °;
The outer ring surface of the opening end of described silica tube is set with O-ring seal, and the inwall of the cutting ferrule end of described ferrule structure is close to described O-ring seal, is completed the sealing of the opening end for described silica tube;
Described O-ring seal is specially high strength graphite composite pad;
Described hydrogen pipeline import is positioned at the position of the close side ring wall of the described silica tube the other end, and the described hydrogen pipeline import under guaranteeing working order is positioned at the top position at the center of the other end of described silica tube, when guaranteeing that silica tube tilts, liquid gallium can not flow out from hydrogen pipeline import;
Described hydrogen pipeline import also can be positioned at the side ring wall of the described silica tube the other end, and when guaranteeing that silica tube tilts, liquid gallium can not flow out from hydrogen pipeline import;
Described heating unit is specially carbon fiber heating silk, and described carbon fiber heating silk is periphery in the outer ring surface of described silica tube, and guarantees that naked eyes can see the object of described silica tube inside;
Preferably, described silica tube can be double-deck silica tube structure, comprise layered quartz tube, outer silica tube, now described hydrogen pipeline import is communicated with the inner chamber of described layered quartz tube after running through described outer silica tube, in the cavity that described carbon fiber heating silk is periphery between described layered quartz tube, outer silica tube;
Be furnished with high temperature resistant temperature measurer in cavity between described layered quartz tube, outer silica tube, described layered quartz tube is close in the sensing part of described high temperature resistant temperature measurer;
Described high temperature resistant temperature measurer is specially infrared thermometer.
Adopt of the present utility model after, Semiconductor enterprises only needs silica tube, hydrogen passage, heating unit, pump-line structure, namely a set of device by reclaiming gallium in gan is can be assembled into, then the waste material of nitrogen gallium is placed in only containing in the silica tube of hydrogen, and hydrogen inputs continuously, silica tube is heated to 750 DEG C ~ 900 DEG C afterwards, make gan and hydrogen occur in silica tube send out should, the pump-line external from silica tube extracts the ammonia generated silica tube, ammonia is collected and focuses on, until gan completely by solid state transformed for closing hydrogen input after liquid state, pump-line continues to bleed after 1min ~ 2min and closes pump-line, be cooled to 25 DEG C ~ 35 DEG C, open closed container and take out the gallium of purifying, it makes the technique reclaiming gallium from gan simple, be applicable to dispose voluntarily in Semiconductor enterprises, reduce the material cost of enterprise.
Accompanying drawing explanation
Fig. 1 is the structural representation sketch of device by reclaiming gallium in gan of the present utility model;
Fig. 2 is the specific embodiment structural representation sketch of device by reclaiming gallium in gan of the present utility model;
Title in figure corresponding to sequence number is as follows:
Silica tube 1, hydrogen pipeline import 2, heating unit 3, ferrule structure 4, pump-line 5, evacuating valve 6, hydrogen pipeline 7, layered quartz tube 1-1, outer silica tube 1-2, O-ring seal 8, high temperature resistant temperature measurer 9.
Embodiment
A kind of device by reclaiming gallium in gan, see Fig. 1: closed container is silica tube 1, the one end open of silica tube, the other end is closed and is provided with hydrogen pipeline import 2, the outer ring surface of silica tube 1 is furnished with heating unit 3, the opening end position correspondence of silica tube 1 is furnished with ferrule structure 4, the exit end of ferrule structure 4 is circumscribed with pump-line 5, the waste material of nitrogen gallium is placed with in silica tube 1 under working order, ferrule structure 4 seal cartridge is loaded on the opening end of silica tube 1, pump-line 5 is furnished with evacuating valve 6, hydrogen pipeline import 2 is circumscribed with hydrogen pipeline 7, it is (not shown in FIG. that hydrogen pipeline 7 is furnished with hydrogen valve, belong to existing mature structure), the opening end of the silica tube 1 under working order is inclined upwardly layout, its angle of inclination is 30 ° ~ 35 °, hydrogen and gan complete reaction when being convenient to logical hydrogen,
The outer ring surface of the opening end of silica tube 1 is set with O-ring seal 8, and the inwall of the cutting ferrule end of ferrule structure 4 is close to O-ring seal 8, is completed the sealing of the opening end for silica tube 1; O-ring seal 8 is specially high strength graphite composite pad, and high strength graphite composite pad can the temperature of resistance to 1000 DEG C, still seals when can guarantee that silica tube 1 is heated to 750 DEG C ~ 900 DEG C;
Hydrogen pipeline import 2 is positioned at the position of the close side ring wall of the silica tube the other end, and the hydrogen pipeline import 2 under guaranteeing working order is positioned at the top position at the center of the other end of silica tube 1, when silica tube is tilted, liquid gallium can not flow out from hydrogen pipeline import; Hydrogen pipeline import 2 also can be positioned at the side ring wall of silica tube 1 the other end, and when making silica tube 1 under working order tilt equally, liquid gallium can not flow out from hydrogen pipeline import.
A kind of concrete operation step of the device by reclaiming gallium in gan is as follows:
The waste material of nitrogen gallium is put into silica tube 1 by 1, sealed silica envelope 1;
2 open evacuating valve 6, close hydrogen valve, to extract in silica tube 1 air until vacuum, then open hydrogen valve gate open and enter hydrogen and be about 1.5min ~ 2.5min, close hydrogen valve, extract hydrogen in silica tube and, until vacuum, open hydrogen valve and continue to pass into hydrogen;
3 heated quarty tube 1 temperature to 750 DEG C ~ 900 DEG C, gan and hydrogen occur to send out in silica tube 1 answers, collect from pump-line 5 ammonia extracted silica tube 1 simultaneously and focus on, hydrogen valve is closed by solid state transformed for during liquid state completely until observing gan through silica tube 1, continue to bleed about 1min ~ 2min, closes evacuating valve, be cooled to about 25 DEG C ~ 35 DEG C, open ferrule structure 4, take out the gallium of purifying.
A kind of specific embodiment of device by reclaiming gallium in gan, see Fig. 2: silica tube 1 is double-deck silica tube structure, comprises layered quartz tube 1-1, outer silica tube 1-2, now hydrogen pipeline import 2 is communicated with the inner chamber of layered quartz tube 1-1 after running through outer silica tube 1-2, heating unit 3 is specially carbon fiber heating silk, in the cavity that carbon fiber heating silk is periphery between layered quartz tube 1-1, outer silica tube 1-2, and guarantee that naked eyes can see the object of layered quartz tube 1-1 inside, the outer ring surface of the opening end of layered quartz tube 1-1 is set with O-ring seal 8; Be furnished with high temperature resistant temperature measurer 9 in cavity between layered quartz tube 1-1, outer silica tube 1-2, layered quartz tube 1-1 is close in the sensing part of high temperature resistant temperature measurer 9; High temperature resistant temperature measurer 9 is specially infrared thermometer, carbon fiber heating efficiency is high, infrared thermometer is conducive to Real-Time Monitoring Heating temperature simultaneously, and accurately control temperature of reaction, ferrule structure 4 does not interfere the layout of heating unit 3, high temperature resistant temperature measurer 9 after sealing up the one end open of layered quartz tube 1-1.
Adopt the beneficial effect of this device as follows:
1, modification and recovery technique, pyrogenic process gallium extracting technology is simple;
2, limit ventilation limit reaction, is beneficial to gan waste material and fully contacts with hydrogen, be beneficial to and obtain high purity gallium;
3, adopt external heating system, be convenient to heating and bring down a fever;
4, stopping property is good, stops inclusion of air, prevents explosive accident from occurring;
5, obtain the process of ammonia centralized collection, protection of the environment, this device cleanliness without any pollution, meets national environmental protection policy, is conducive to resource circulation utilization simultaneously.
Above specific embodiment of the utility model has been described in detail, but content being only preferred embodiment of the present utility model, can not being considered to for limiting practical range of the present utility model.All equalizations done according to the utility model application range change and improve, and all should still belong within this patent covering scope.
Claims (10)
1. one kind by the device reclaiming gallium in gan, it is characterized in that: it comprises silica tube, the one end open of described silica tube, the other end are closed and are provided with hydrogen pipeline import, the outer ring surface of described silica tube is furnished with heating unit, the opening end position correspondence of described silica tube is furnished with ferrule structure, the exit end of described ferrule structure is circumscribed with pump-line, and be placed with the waste material of nitrogen gallium in the described silica tube under working order, described cutting ferrule seal cartridge is loaded on the opening end of described silica tube.
2. a kind of device by reclaiming gallium in gan as claimed in claim 1, it is characterized in that: described pump-line is furnished with evacuating valve, described hydrogen pipeline import is circumscribed with hydrogen pipeline, and described hydrogen pipeline is furnished with hydrogen valve.
3. a kind of device by reclaiming gallium in gan as claimed in claim 1, is characterized in that: the opening end of the described silica tube under working order is inclined upwardly layout, and its angle of inclination is 30 ° ~ 35 °.
4. a kind of device by reclaiming gallium in gan as claimed in claim 1, it is characterized in that: the outer ring surface of the opening end of described silica tube is set with O-ring seal, the inwall of the cutting ferrule end of described ferrule structure is close to described O-ring seal, is completed the sealing of the opening end for described silica tube.
5. a kind of device by reclaiming gallium in gan as claimed in claim 4, is characterized in that: described O-ring seal is specially high strength graphite composite pad.
6. a kind of device by reclaiming gallium in gan as claimed in claim 1, it is characterized in that: described hydrogen pipeline import is positioned at the position of the close side ring wall of the described silica tube the other end, and the described hydrogen pipeline import under guaranteeing working order is positioned at the top position at the center of the other end of described silica tube.
7. a kind of device by reclaiming gallium in gan as claimed in claim 1, is characterized in that: described hydrogen pipeline import also can be positioned at the side ring wall of the described silica tube the other end.
8. a kind of device by reclaiming gallium in gan as claimed in claim 1, it is characterized in that: described heating unit is specially carbon fiber heating silk, described carbon fiber heating silk is periphery in the outer ring surface of described silica tube, and guarantees that naked eyes can see the object of described silica tube inside.
9. a kind of device by reclaiming gallium in gan as claimed in claim 8, it is characterized in that: described silica tube can be double-deck silica tube structure, comprise layered quartz tube, outer silica tube, now described hydrogen pipeline import is communicated with the inner chamber of described layered quartz tube after running through described outer silica tube, in the cavity that described carbon fiber heating silk is periphery between described layered quartz tube, outer silica tube.
10. a kind of device by reclaiming gallium in gan as claimed in claim 9, it is characterized in that: be furnished with high temperature resistant temperature measurer in the cavity between described layered quartz tube, outer silica tube, described layered quartz tube is close in the sensing part of described high temperature resistant temperature measurer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420736886.1U CN204311117U (en) | 2014-11-28 | 2014-11-28 | A kind of device by reclaiming gallium in gan |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420736886.1U CN204311117U (en) | 2014-11-28 | 2014-11-28 | A kind of device by reclaiming gallium in gan |
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| CN204311117U true CN204311117U (en) | 2015-05-06 |
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| CN201420736886.1U Expired - Fee Related CN204311117U (en) | 2014-11-28 | 2014-11-28 | A kind of device by reclaiming gallium in gan |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104357666A (en) * | 2014-11-28 | 2015-02-18 | 易德福 | Method for recovering gallium from gallium nitride and device using method |
| CN113652559A (en) * | 2021-08-20 | 2021-11-16 | 安徽工业大学 | Method for recovering rare and scattered metal gallium in gallium nitride waste material by pyrogenic process |
| CN115318073A (en) * | 2022-07-07 | 2022-11-11 | 西北工业大学 | Electromagnetic suspension device capable of treating toxic and volatile substances and preparation method |
-
2014
- 2014-11-28 CN CN201420736886.1U patent/CN204311117U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104357666A (en) * | 2014-11-28 | 2015-02-18 | 易德福 | Method for recovering gallium from gallium nitride and device using method |
| CN113652559A (en) * | 2021-08-20 | 2021-11-16 | 安徽工业大学 | Method for recovering rare and scattered metal gallium in gallium nitride waste material by pyrogenic process |
| CN113652559B (en) * | 2021-08-20 | 2022-07-29 | 安徽工业大学 | Method for recovering rare and scattered metal gallium in gallium nitride waste material by pyrogenic process |
| CN115318073A (en) * | 2022-07-07 | 2022-11-11 | 西北工业大学 | Electromagnetic suspension device capable of treating toxic and volatile substances and preparation method |
| CN115318073B (en) * | 2022-07-07 | 2024-03-15 | 西北工业大学 | Electromagnetic suspension device capable of treating toxic volatile substances and preparation method |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20151123 Address after: 344000 Jiangxi city of Fuzhou province high tech Zone gold Ni Road No. 198 incubator Park A7 building 3 floor Patentee after: JIANGXI DEYI SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 100000 Beijing city Haidian District Shangyuan village of 3 homes and 2003 Graduate School of Mechatronics Patentee before: Yi Defu |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150506 Termination date: 20211128 |