CN204289360U - A kind of for the ionogenic anode assembly of parallel beam - Google Patents
A kind of for the ionogenic anode assembly of parallel beam Download PDFInfo
- Publication number
- CN204289360U CN204289360U CN201420615653.6U CN201420615653U CN204289360U CN 204289360 U CN204289360 U CN 204289360U CN 201420615653 U CN201420615653 U CN 201420615653U CN 204289360 U CN204289360 U CN 204289360U
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- CN
- China
- Prior art keywords
- becket
- parallel beam
- anode
- anode assembly
- ionogenic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000000463 material Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 abstract description 11
- 238000010884 ion-beam technique Methods 0.000 abstract description 10
- 230000005684 electric field Effects 0.000 abstract description 8
- 239000002184 metal Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241000276425 Xiphophorus maculatus Species 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
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- Electron Sources, Ion Sources (AREA)
Abstract
The utility model discloses a kind of for the ionogenic anode assembly of parallel beam.In order to improve the Electric Field Distribution uniformity of ion source discharge indoor, describedly comprise anode base plate for the ionogenic anode assembly of parallel beam, multiple becket is fixedly equiped with at anode plate upper surface, in adjacent two beckets, a becket is positioned at another becket, and has gap between adjacent two beckets.Anode assembly of the present utility model improves ion source outlet ion beam uniformity, thus improves etching technics uniformity.
Description
Technical field
The utility model relates to a kind of for the ionogenic anode assembly of parallel beam, is particularly useful for ion beam etching equipment heavy caliber parallel beam ion source and uses as anode.
Background technology
Ion beam etching utilizes low-yield parallel Ar+ ion beam to bombard substrate surface, the part of non-for substrate surface mask film covering sputtered, thus reach the object of selective etching.Ion beam etching is pure physical etchings process, there is the feature that the highest, the steep property of resolution is best in various conventional lithographic method, and can etch majority of material, such as: the materials such as metal, alloy, oxide, compound, composite material, semiconductor, insulator, superconductor.
Current existing ion source anode is platy structure substantially, because anodes centre and arc chamber distance increase, cause arc chamber internal electric field uneven, arc chamber outlet edge position electric field is more weak, the final Uniform discharge affected in arc chamber, thus cause the line of ion beam periphery less.
Utility model content
For the etching homogeneity requirement of ion beam etching equipment, the utility model aims to provide one for the ionogenic anode assembly of parallel beam, and this anode assembly can improve ion source outlet ion beam uniformity, thus improves etching technics uniformity.
To achieve these goals, the technical scheme that the utility model adopts is:
A kind of for the ionogenic anode assembly of parallel beam, comprise anode base plate, be fixedly equiped with multiple becket at anode plate upper surface; In adjacent two beckets, a becket is positioned at another becket, and has gap between adjacent two beckets.
Thus, becket changes the Electric Field Distribution of ion source discharge indoor, thus improves the uniformity of arc chamber internal electric field.
Be below the technical scheme of further improvement of the utility model:
In order to improve the uniformity of arc chamber internal electric field further, according to embodiment of the present utility model, in multiple becket, be positioned at outside becket perpendicular to anode base plate height lower than be positioned at inner side becket, in other words, the height of becket is outwards reduction trend by center.
Described anode base plate is provided with and reduces its structure at the indoor radial direction surface area of ion source discharge, can reduce the bombardment of duplet anode thus, improves electronics useful life.
Described anode base plate is preferably trifid structure or has the hollowed-out board of multiple perforate.
Described becket is annulus, and arranged concentric.
Described becket has 3-6.
Described becket is high temperature resistant and the ring made of non-magnet_conductible material.
Compared with prior art, the beneficial effects of the utility model are: the field uniformity that invention increases ion source discharge indoor, thus improve ion source beam uniformity, finally realize the object of ion beam etching equipment high evenness etching technics requirement.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model embodiment;
The structural representation of another embodiment of Fig. 2 the utility model.
In the drawings
1-anode base plate; 2-metal ring.
Embodiment
Embodiments of the invention are described in detail below in conjunction with accompanying drawing.It should be noted that figure number only represents the main parts size of the present embodiment, other is not listed one by one.
A kind of for the ionogenic anode assembly of parallel beam, as shown in Figure 1, be made up of anode base plate 1 and some metal rings 2.Described anode base plate 1 and metal ring 2 are high temperature resistant and non-magnet_conductible material.Described anode base plate 1 is trifid structure or plate face Openworks shape, is designed with some metal ring 2 installing holes and this anode assembly installing hole above.Anode base plate 1 is the object of trifid structure or plate face Openworks shape is to reduce the surface area of anode in the indoor radial direction of ion source discharge, thus reduce the bombardment of duplet anode, improve electronics useful life, reduce the temperature rise that the bombardment because of duplet anode causes.The version of anode base plate 1 can variation, and be not limited only to trifid structure as shown in Figure 1 or plate face engraved structure as shown in Figure 2, other shapes also can.
Described metal ring 2 is arranged on anode base plate 1, and each metal ring 2 is installed with one heart, and height is by center outwards in reduction trend, and concrete quantity and height calculate according to actual emulation and obtain, and the present embodiment is four.The effect of some metal rings 2 is the Electric Field Distribution changing ion source discharge indoor, improves the uniformity of arc chamber internal electric field, thus improves plasma distribution density, finally realize the ion beam current of high evenness.
The content that above-described embodiment is illustrated should be understood to these embodiments only for being illustrated more clearly in the utility model, and be not used in restriction scope of the present utility model, after having read the utility model, the amendment of those skilled in the art to the various equivalent form of value of the present utility model has all fallen within the application's claims limited range.
Claims (7)
1. for the ionogenic anode assembly of parallel beam, comprise anode base plate (1), it is characterized in that, be fixedly equiped with multiple becket (2) at anode base plate (1) upper surface; In adjacent two beckets (2), a becket is positioned at another becket, and has gap between adjacent two beckets (2).
2. according to claim 1ly to it is characterized in that for the ionogenic anode assembly of parallel beam, in multiple becket (2), the becket being positioned at outside perpendicular to the height of anode base plate (1) lower than the becket being positioned at inner side.
3. according to claim 1ly it is characterized in that for the ionogenic anode assembly of parallel beam, described anode base plate (1) is provided with reduces its structure at the indoor radial direction surface area of ion source discharge.
4. according to claim 1 or 3 for the ionogenic anode assembly of parallel beam, it is characterized in that, described anode base plate (1) is trifid structure or the hollowed-out board with multiple perforate.
5. according to one of claim 1 ~ 3 Suo Shu for the ionogenic anode assembly of parallel beam, it is characterized in that, described becket (2) is annulus, and arranged concentric.
6. according to one of claim 1 ~ 3 Suo Shu for the ionogenic anode assembly of parallel beam, it is characterized in that, described becket (2) has 3-6.
7. according to one of claim 1 ~ 3 Suo Shu for the ionogenic anode assembly of parallel beam, it is characterized in that, the ring that described becket (2) is made for high temperature resistant and non-magnet_conductible material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420615653.6U CN204289360U (en) | 2014-10-23 | 2014-10-23 | A kind of for the ionogenic anode assembly of parallel beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420615653.6U CN204289360U (en) | 2014-10-23 | 2014-10-23 | A kind of for the ionogenic anode assembly of parallel beam |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204289360U true CN204289360U (en) | 2015-04-22 |
Family
ID=52872494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420615653.6U Expired - Lifetime CN204289360U (en) | 2014-10-23 | 2014-10-23 | A kind of for the ionogenic anode assembly of parallel beam |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204289360U (en) |
-
2014
- 2014-10-23 CN CN201420615653.6U patent/CN204289360U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20150422 |