CN204204907U - A kind of High Performance Insulation layer of AlSiC composite base plate - Google Patents
A kind of High Performance Insulation layer of AlSiC composite base plate Download PDFInfo
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- CN204204907U CN204204907U CN201420644504.2U CN201420644504U CN204204907U CN 204204907 U CN204204907 U CN 204204907U CN 201420644504 U CN201420644504 U CN 201420644504U CN 204204907 U CN204204907 U CN 204204907U
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Abstract
The utility model discloses a kind of High Performance Insulation layer of AlSiC composite base plate, comprise AlSiC composite base plate, diamond-like carbon film and aluminium nitride film, described diamond-like carbon film is deposited on AlSiC composite base plate; Described aluminium nitride film is deposited on diamond-like carbon film.The High Performance Insulation layer of AlSiC composite base plate of the present utility model, has that structure is simple, the advantage of good heat conductivity, excellent insulation performance.
Description
Technical field
The utility model relates to a kind of high performance insulating barrier, particularly a kind of High Performance Insulation layer of AlSiC composite base plate.
Background technology
In recent years, high-power LED illumination has complied with the trend of energy-conserving and environment-protective, obtains development at a high speed.The substrate that great power LED adopts in encapsulation is generally metal substrate, ceramic substrate and composite substrate.Composite substrate, as AlSiC composite base plate, has the advantage of high heat conduction and low thermal coefficient of expansion, also grows up gradually.But compared to ceramic substrate, the shortcoming of above-mentioned material substrate is on-insulated.Because circuit will be done on substrate, must ensure to keep good insulating properties between substrate and circuit, otherwise component failure can be caused because of short circuit.Therefore, for AlSiC composite base plate, insulating barrier is one of technical essential of base plate for packaging.
Base plate for packaging commercial is now generally using aluminium oxide or some organic insulation substrates as the insulating barrier of substrate, but above-mentioned material more or less all exists the shortcoming that some affect LED performance.Such as thermal conductivity is very low, causes the heat dispersion of LED light source low; Puncture voltage is less than normal, is far not by far up to the mark.In order to solve the problem, the method of someone proposition magnetron sputtering prepares aluminium nitride (AlN) film as insulating barrier, but insulating barrier prepared by the method faces Railway Project: first, the performance of AlN film is difficult to reach requirement, be mainly reflected in insulation property not good enough, breakdown voltage value is less than normal; The second, in order to improve the insulation property of AlN film, the film of sputtering is enough thick, and thus sputtering takes very long, adds the cost of encapsulation; 3rd, the high-quality AlN film of magnetron sputtering, the smoothness requirements for substrate surface is very high, for the obstacle being difficult to beyond doubt the aluminium silicon carbide substrate that hardness is very large go beyond.In addition, also have people to bore carbon (DLC) film as insulating barrier by class, the same with AlN film, DLC film has the advantage of high heat conduction, and simultaneously superior in quality DLC film insulation property are also very superior.But there is the limitation of above-mentioned AlN film equally in DLC film.
Utility model content
In order to the above-mentioned shortcoming overcoming prior art is with not enough, the purpose of this utility model is the High Performance Insulation layer providing a kind of AlSiC composite base plate, and insulation property are superior, can significantly improve heat dispersion, and improve the quality of aluminium nitride film.
The purpose of this utility model is achieved through the following technical solutions:
A High Performance Insulation layer for AlSiC composite base plate, comprise AlSiC composite base plate, class bores carbon (DLC) film and aluminium nitride (AlN) film, described diamond-like carbon film is deposited on AlSiC composite base plate; Described aluminium nitride film is deposited on diamond-like carbon film.
The thickness of described diamond-like carbon film is 10 μm-40 μm, and RF-PECVD or other preparation methods can be adopted at the deposited on silicon of LED package substrate.
The thickness of described aluminium nitride film is 5 μm-30 μm, and magnetron sputtering or other preparation methods can be adopted to deposit in DLC film.
Compared with prior art, the utility model has the following advantages and beneficial effect:
(1) the utility model prepares AlN film in DLC film, provides the quality of AlN film; Because AlSiC is the material that hardness is very large, polishing difficulty, if directly prepare AlN on AlSiC composite base plate, not only poor quality, and insulation property are bad, but first prepare one deck DLC film on AlSiC, can improve the smooth degree on surface, the quality therefore preparing AlN film in DLC film can improve a lot.
(2) the utility model adopts DLC and AlN double-layer films as the insulating barrier of AlSiC composite base plate, has good insulation property.The resistivity of DLC is 10
10-10
13Ω * cm, disruptive field intensity is close to 150V/ μm; The resistivity of AlN is greater than 10
13Ω * cm, disruptive field intensity is 100V/ μm.As can be seen here, both insulation property are all very good, and compared to insulating barriers such as conventional aluminium oxide, DLC film and AlN film combine thinner as the thickness of insulating barrier, and insulation property are better.
(3) the utility model by depositing DLC film and AlN film on AlSiC composite base plate, not only can play excellent insulating effect, can also as heat-conducting layer.The pyroconductivity of DLC is up to 475W/m*k, and the pyroconductivity of AlN also reaches 320W/m*k, and both heat-conductive characteristics are all better than a lot of metal, and DLC film and AlN film combine as insulating barrier, can also improve the heat dispersion of AlSiC composite base plate.
Accompanying drawing explanation
Fig. 1 is the schematic cross-section of the High Performance Insulation layer of AlSiC composite base plate of the present utility model.
Embodiment
Below in conjunction with embodiment, the utility model is described in further detail, but execution mode of the present utility model is not limited thereto.
Embodiment 1
As Fig. 1, the High Performance Insulation layer of the AlSiC composite base plate of the present embodiment, comprises AlSiC composite base plate 3, DLC film 2 and AlN film 1.Described DLC film is deposited on AlSiC composite base plate; AlN thin film deposition is in DLC film.In the present embodiment, the thickness of DLC film is 20 μm, and the thickness of AlN film is 25 μm.
The preparation method of the High Performance Insulation layer of the AlSiC composite base plate of the present embodiment is as follows:
(1) polished and cleaned AlSiC composite base plate.With the polishing fluid of different grain size (respectively from big to small) AlSiC composite base plate is placed on polishing machine and minute surface is polished to it, then use ultrasonic washing instrument cleaning 10min successively with acetone, alcohol and deionized water, and use N
2dry up, to remove the foreign material that substrate adheres to.
(2) DLC film is deposited.The method deposit thickness that AlSiC composite base plate strengthens chemical vapour deposition (CVD) (RF-PECVD) by radio frequency plasma is the DLC film of 20 μm.Concrete operation method is as follows: before deposition, first in the Ar (20SCCM) of 2.5Pa, bombards substrate 20min with 100W radio-frequency power, further clean substrate surface; With mechanical pump, gas pressure in vacuum is extracted into 10Pa again, then in vacuum chamber, passes into Ar and C successively
2h
2(both volume ratios are 2:1), makes gas pressure in vacuum be stabilized in 20Pa; Finally radio-frequency power supply power is elevated to 150W, produces bright aura in vacuum chamber, Ar is ionized and produces Ar
+, Ar
+bombardment C
2h
2molecule makes it occur to decompose and dissociation, and on AlSiC composite base plate, deposition generates diamond-like carbon film, and sedimentation time is 2.5h-3h.
(3) AlN film is sputtered.Sputter by the method for magnetron sputtering the AlN film that a layer thickness is 25 μm on the composite base plate surface having deposited DLC film.Described magnetron sputtering adopts DC magnetron reactive sputtering, and concrete technology parameter is as follows: constant-current source output current 3A, voltage 290-300V, power 900W; Operating air pressure is 0.7Pa; Nitrogen partial pressure is 20% (Ar:100SCCM, N
2: 25SCCM)-25% (Ar:100SCCM, N
2: 33SCCM); Sputtering time is 2.5h-3h.
The High Performance Insulation layer of AlSiC composite base plate prepared by the present embodiment, the quality of AlN film is high, insulation property, perfect heat-dissipating:
(1) the utility model prepares AlN film in DLC film, provides the quality of AlN film; Because AlSiC is the material that hardness is very large, polishing difficulty, if directly prepare AlN on AlSiC composite base plate, not only poor quality, and insulation property are bad, but first prepare one deck DLC film on AlSiC, can improve the smooth degree on surface, the quality therefore preparing AlN film in DLC film can improve a lot.
(2) the utility model adopts DLC and AlN double-layer films as the insulating barrier of AlSiC composite base plate, has good insulation property.The resistivity of DLC is 10
10-10
13Ω * cm, disruptive field intensity is close to 150V/ μm; The resistivity of AlN is greater than 10
13Ω * cm, disruptive field intensity is 100V/ μm.As can be seen here, both insulation property are all very good, and compared to insulating barriers such as conventional aluminium oxide, DLC film and AlN film combine thinner as the thickness of insulating barrier, and insulation property are better.
(3) the utility model by depositing DLC film and AlN film on AlSiC composite base plate, not only can play excellent insulating effect, can also as heat-conducting layer.The pyroconductivity of DLC is up to 475W/m*k, and the pyroconductivity of AlN also reaches 320W/m*k, and both heat-conductive characteristics are all better than a lot of metal, and DLC film and AlN film combine as insulating barrier, can also improve the heat dispersion of AlSiC composite base plate.
Embodiment 2
The High Performance Insulation layer of the AlSiC composite base plate of the present embodiment, comprises AlSiC composite base plate 3, DLC film 2 and AlN film 1.Described DLC film is deposited on AlSiC composite base plate; AlN thin film deposition is in DLC film.In the present embodiment, the thickness of DLC film is 10 μm, and the thickness of AlN film is 30 μm.
The preparation method of the High Performance Insulation layer of the AlSiC composite base plate of the present embodiment is as follows:
(1) polished and cleaned AlSiC composite base plate.With the polishing fluid of different grain size (respectively from big to small) AlSiC base plate for packaging is placed on polishing machine and minute surface is polished to it, then use ultrasonic washing instrument cleaning 10min successively with acetone, alcohol and deionized water, and use N
2dry up, to remove the foreign material that substrate adheres to.
(2) DLC film is deposited.The method deposit thickness that AlSiC composite base plate strengthens chemical vapour deposition (CVD) (RF-PECVD) by radio frequency plasma is the DLC film of 20 μm.Concrete operation method is as follows: before deposition, first in the Ar (20SCCM) of 2.5Pa, bombards substrate 20min with 100W radio-frequency power, further clean substrate surface; With mechanical pump, gas pressure in vacuum is extracted into 10Pa again, then in vacuum chamber, passes into Ar and C successively
2h
2(both volume ratios are 2:1), makes gas pressure in vacuum be stabilized in 20Pa; Finally radio-frequency power supply power is elevated to 150W, produces bright aura in vacuum chamber, Ar is ionized and produces Ar
+, Ar
+bombardment C
2h
2molecule makes it occur to decompose and dissociation, and on AlSiC composite base plate, deposition generates class and bores carbon stone film, and sedimentation time is 2.5h-3h.
(3) AlN film is sputtered.Sputter by the method for magnetron sputtering the AlN film that a layer thickness is 25 μm on the composite base plate surface having deposited DLC film.Described magnetron sputtering adopts DC magnetron reactive sputtering, and concrete technology parameter is as follows: constant-current source output current 3A, voltage 290-300V, power 900W; Operating air pressure is 0.7Pa; Nitrogen partial pressure is 20% (Ar:100SCCM, N
2: 25SCCM)-25% (Ar:100SCCM, N
2: 33SCCM); Sputtering time is 2.5h-3h.
Embodiment 3
The thickness that the present embodiment removes DLC film is 40 μm, and the thickness of AlN film is outside 5 μm, and all the other features and embodiment 1 are together.
Above-described embodiment is the utility model preferably execution mode; but execution mode of the present utility model is not limited by the examples; change, the modification done under other any does not deviate from Spirit Essence of the present utility model and principle, substitute, combine, simplify; all should be the substitute mode of equivalence, be included within protection range of the present utility model.
Claims (3)
1. a High Performance Insulation layer for AlSiC composite base plate, is characterized in that, comprises AlSiC composite base plate, diamond-like carbon film and aluminium nitride film, and described diamond-like carbon film is deposited on AlSiC composite base plate; Described aluminium nitride film is deposited on diamond-like carbon film.
2. the High Performance Insulation layer of AlSiC composite base plate according to claim 1, is characterized in that, the thickness of described diamond-like carbon film is 10 μm-40 μm.
3. the High Performance Insulation layer of AlSiC composite base plate according to claim 1, is characterized in that, the thickness of described aluminium nitride film is 5 μm-30 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420644504.2U CN204204907U (en) | 2014-10-31 | 2014-10-31 | A kind of High Performance Insulation layer of AlSiC composite base plate |
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|---|---|---|---|
| CN201420644504.2U CN204204907U (en) | 2014-10-31 | 2014-10-31 | A kind of High Performance Insulation layer of AlSiC composite base plate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104347782A (en) * | 2014-10-31 | 2015-02-11 | 华南理工大学 | High-performance insulation layer for AlSiC composite base plate |
| CN107532274A (en) * | 2015-04-30 | 2018-01-02 | 冯·阿登纳有限公司 | Method and coating unit |
-
2014
- 2014-10-31 CN CN201420644504.2U patent/CN204204907U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104347782A (en) * | 2014-10-31 | 2015-02-11 | 华南理工大学 | High-performance insulation layer for AlSiC composite base plate |
| CN107532274A (en) * | 2015-04-30 | 2018-01-02 | 冯·阿登纳有限公司 | Method and coating unit |
| US10745797B2 (en) | 2015-04-30 | 2020-08-18 | VON ARDENNE Asset GmbH & Co. KG | Method and coating arrangement |
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