CN204203472U - A kind of α, β radiating surface pollution detection device - Google Patents
A kind of α, β radiating surface pollution detection device Download PDFInfo
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- CN204203472U CN204203472U CN201420693650.4U CN201420693650U CN204203472U CN 204203472 U CN204203472 U CN 204203472U CN 201420693650 U CN201420693650 U CN 201420693650U CN 204203472 U CN204203472 U CN 204203472U
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Abstract
The utility model discloses a kind of α, β radiating surface pollution detection device, comprise probe and prime amplifier, and the single-channel pulse amplitude discriminator connected with the output terminal of prime amplifier; Optical conductor, scintillator and film frame that probe comprises housing and is arranged on successively from top to bottom in housing, together with the bottom surface of scintillator and optical conductor are fitted tightly by silicone oil couplant, metallized film has been puted up at the top of film frame, the top of metallized film is provided with the guard covering on case top, the side of housing is fixedly connected with the mounting pipe be connected with housing cavity, be provided with photomultiplier in mounting pipe, the end window face of photomultiplier is of coupled connections by couplant and optical conductor; The input end of prime amplifier connects with the output terminal of photomultiplier.The utility model is installed, debugs and safeguards simple and direct, convenient, and uniformity index is good, and the intertrack crosstalk rate of α to β is low, dependable performance, buying, run, maintenance cost is low, result of use is good, is convenient to promote the use of.
Description
Technical field
The utility model belongs to nuclear radiation detection technique field, is specifically related to a kind of α, β radiating surface pollution detection device.
Background technology
Along with the propelling that nuclear energy peace develops, from uranium mining, ore processing, uranium be refined to the processes such as nuclear fuel element manufacture and nuclear energy power generation, all may relate to production and the operation of various radiomaterial, these radiomaterials, in production with operating process, may produce radioactive particulate material and disperse forms radioaerosol in air; Or radioactive particulate matter or volatile matter are attached to staff's body surface or other body surfaces, formation surface is polluted.
α, β and gamma activity material all can produce body surface radioactive contamination.From radiation protection angle, people's major concern be the surface contamination of α and β, especially α particle, stains strong adhesion, and the internal radiation that α particle enters inside of human body and formed, and has larger harm to human body.Therefore, α and β pollution condition is carried out to staff's trick surface and detects, prevent radioactive contamination from spreading, ensure staff's occupational health important in inhibiting.
At present, the detector for measuring trick α, β surface contamination mainly comprises following two kinds of methods and shortcoming:
1, gas-flow proportional counter tube: it is comparatively large that detection area can do, and manufacture craft requires high, and needs working gas, generally adopts Ar-CH
4or Ar-CO
2, have gas consumption in routine work, the gas consumption of every platform instrument (trick α, β contamination monitor) is 4 ~ 8 ls/h always.
Shortcoming: α, β surface contamination detector adopting gas-flow proportional counter tube, gas consumption is large, and operating cost is higher, and scene needs reserved gas circuit loop, adds site operation difficulty and on-site installation work amount.In addition, the intertrack crosstalk rate of gas-flow proportional counter tube detector is higher.
2, the plastic film scintillator of ZnS (Ag) coating and air receive photo-detector: mixed by a certain percentage with organic glass powder by zinc sulphide (silver activates) powder, be dissolved in organic solvent ethylene dichloride, then be sprayed on plastic scintillant, zinc sulphide coating general thickness is 8mg/cm
2~ 10mg/cm
2, can cut into various shape, ZnS luminescence efficiency is high, very large to heavy charged particle stopping power, and the area that can do is very large, and therefore, the plastic scintillant of ZnS coating measures the best scintillator of α, beta activity.Air receives light mode, namely MgO reflection horizon is sprayed at the detector housing inside surface of photomultiplier and scintillator composition, flashing photon is made to enter into photomultiplier by reflection horizon, because the every secondary reflection in reflection horizon all has energy loss, therefore, striving making scintillation photons reach the photocathode of photomultiplier through minimum order of reflection, the Distance geometry angle etc. of the angle of shell reflective layer, photomultiplier and scintillator, is all the key factor that optical efficiency is received in impact.
Shortcoming: the most plastic film scintillator of ZnS (Ag) coating and air of adopting receives α, β contamination monitor product of light as exploring block at present, and detection area can not be accomplished very large, current known maximum single detection area 345cm
2(15*23cm), and adopt airlight to receive light mode, because photomultiplier is vertically positioned at detector centre, the uniformity index in test surface is poor, and intertrack crosstalk rate is larger.
Utility model content
Technical problem to be solved in the utility model is for above-mentioned deficiency of the prior art, a kind of α, β radiating surface pollution detection device is provided, it installs, debugs and safeguards simple and direct, convenient, integrated level is high, and uniformity index is good, and the intertrack crosstalk rate of α to β is low, dependable performance, buying, run, maintenance cost is low, result of use is good, is convenient to promote the use of.
For solving the problems of the technologies described above, the technical solution adopted in the utility model is: a kind of α, β radiating surface pollution detection device, it is characterized in that: comprise for detecting α and/or β ray and forming the probe of electric impulse signal and the prime amplifier that amplifies of electric impulse signal for exporting probe, and connect with the output terminal of prime amplifier and single-channel pulse amplitude discriminator for screening out α pulse signal and β pulse signal in the signal that exports from prime amplifier, the optical conductor that described probe comprises housing and is arranged on successively from top to bottom in housing, scintillator and film frame, together with the bottom surface of described scintillator and optical conductor are fitted tightly by silicone oil couplant, the metallized film for carrying out lucifuge process to the measuring surface of scintillator is puted up at the top of described film frame, the top of described metallized film is provided with the guard covering on case top, the side of described housing is fixedly connected with the mounting pipe be connected with housing cavity, in described mounting pipe, photomultiplier is installed, the end window face of described photomultiplier is of coupled connections by couplant and optical conductor, the input end of described prime amplifier connects with the output terminal of photomultiplier.
Above-mentioned a kind of α, β radiating surface pollution detection device, is characterized in that: described scintillator is the plastic scintillant that surface is provided with ZnS coating.
Above-mentioned a kind of α, β radiating surface pollution detection device, it is characterized in that: described prime amplifier comprises triode Q1 and Q2, resistance R41, R42, R43, R44, R45, R46, R47, R48 and R49, nonpolar electric capacity C42, and polar capacitor C41, C43, C45 and C46, the base stage of described triode Q1 is the input end SIG-IN of prime amplifier, and pass through resistance R47 and the resistance R48 ground connection of series connection, the collector of described triode Q1 connects with the negative pole of polar capacitor C46, and by resistance R49 ground connection, the positive pole of described polar capacitor C6 connects with the base stage of triode Q2, and connected with the emitter of triode Q1 by resistance R45, the emitter of described triode Q1 connects with the positive pole of polar capacitor C43, and by series connection resistance R43 and resistance R41 connect with the output terminal of+12V power supply, one end of described resistance R42 and the negative pole of polar capacitor C43 all connect with the link of resistance R47 and resistance R48, the other end of described resistance R42 connects with the link of resistance R43 and resistance R41, the grounded collector of described triode Q2, the emitter of described triode Q2 connects with the positive pole of polar capacitor C45, and connected with the link of resistance R43 and resistance R41 by resistance R44, the negative pole of described polar capacitor C45 connects with one end of resistance R46, the other end of described resistance R46 is the output terminal SIG-OUT of prime amplifier, and the link of described resistance R43 and resistance R41 is by nonpolar electric capacity C42 in parallel and polar capacitor C41 ground connection.
Above-mentioned a kind of α, β radiating surface pollution detection device, it is characterized in that: described single-channel pulse amplitude discriminator comprises the voltage follower circuit, see-saw circuit and the in-phase amplification circuit that connect successively, and the β pulse signal discriminator circuit to connect with the output terminal of in-phase amplification circuit and α pulse signal discriminator circuit, the input end of described β pulse signal discriminator circuit is connected to β upper threshold voltage and β threshold voltages, and the input end of described α pulse signal discriminator circuit is connected to α threshold voltage.
Above-mentioned a kind of α, β radiating surface pollution detection device, is characterized in that: described voltage follower circuit comprises the chip U2 that model is THS4281, resistance R1, R6 and R10, polar capacitor C8 and C18, and nonpolar electric capacity C3, C4, C9 and C16, 3rd pin of described chip U2 is connected with the output terminal of prime amplifier by the resistance R6 that connects successively and nonpolar electric capacity C9, the link of described nonpolar electric capacity C9 and resistance R6 is by resistance R10 ground connection, 2nd pin of described chip U2 be connected to resistance R1 in parallel and nonpolar electric capacity C3 between the 6th pin, 7th pin of described chip U2 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C4 in parallel and polar capacitor C8 ground connection, 4th pin of described chip U2 connects with the output terminal of-5V power supply, and by nonpolar electric capacity C16 in parallel and polar capacitor C18 ground connection, 6th pin of described chip U2 is the output terminal of voltage follower circuit.
Above-mentioned a kind of α, β radiating surface pollution detection device, is characterized in that: described see-saw circuit comprises the chip U3 that model is THS4281, resistance R2, R7, R9 and R12, polar capacitor C6, and nonpolar electric capacity C2, C5, C11 and C12, 2nd pin of described chip U3 is connected with the output terminal of voltage follower circuit by resistance R7, and by nonpolar electric capacity C11 ground connection, 3rd pin of described chip U3 is by resistance R12 ground connection, the 4th pin ground connection of described chip U3, 2nd pin of described chip U3 be connected to resistance R2 in parallel and nonpolar electric capacity C5 between the 6th pin, 7th pin of described chip U2 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C2 in parallel and polar capacitor C6 ground connection, 6th pin of described chip U2 connects with one end of resistance R9, the other end of described resistance R9 be see-saw circuit output terminal and by nonpolar electric capacity C12 ground connection.
Above-mentioned a kind of α, β radiating surface pollution detection device, is characterized in that: described in-phase amplification circuit comprises the chip U4 that model is THS4281, slide rheostat R5, resistance R3, R4, R8 and R11, polar capacitor C7, and nonpolar electric capacity C1 and C10, 3rd pin of described chip U4 connects with the output terminal of see-saw circuit, 2nd pin of described chip U4 connects with one end of resistance R3, and by resistance R4 ground connection, the other end of described resistance R3 connects with a stiff end of slide rheostat R5, the 4th pin ground connection of described chip U4, 6th pin of described chip U4 connects with one end of another stiff end of slide rheostat R5 and sliding end and nonpolar electric capacity C10, the other end of described nonpolar electric capacity C10 connects with one end of resistance R8, and by resistance R11 ground connection, the other end of described resistance R8 is the output terminal Signal of in-phase amplification circuit, 7th pin of described chip U4 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C1 in parallel and polar capacitor C7 ground connection.
Above-mentioned a kind of α, β radiating surface pollution detection device, it is characterized in that: described β pulse signal discriminator circuit is made up of the first pulse signal shaping circuit for pulse signal being converted to square-wave signal and the first monostable circuit of connecting with the first pulse signal shaping circuit, described first pulse signal shaping circuit comprises the chip U5 that model is MAX991, nonpolar electric capacity C19 and C23, and resistance R13, R14, R15, R16, R17 and R18, 2nd pin and the 6th pin of described chip U5 all connect with the output terminal of in-phase amplification circuit, 3rd pin of described chip U5 connects with one end of resistance R16, the other end of described resistance R16 is connected to described β threshold voltages, the 1st pin of described chip U5 be described first pulse signal shaping circuit β low-voltage signal output terminal V-β L and by the resistance R14 that connects successively and resistance R13 ground connection, 5th pin of described chip U5 connects with one end of one end of resistance R15 and nonpolar electric capacity C19, the other end of described resistance R15 is connected to described β upper threshold voltage, 7th pin of described chip U5 is the β high-voltage signal output terminal V-β H of described first pulse signal shaping circuit and by the resistance R18 that connects successively and resistance R17 ground connection, the other end of described nonpolar electric capacity C19 connects with the link of resistance R18 and resistance R17, the 4th pin ground connection of described chip U5, the 8th pin of described chip U5 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C23 ground connection, described first monostable circuit comprises the chip U7 that model is 74HC123D, nonpolar electric capacity C24, C26, C28 and C29, and resistance R22, R23, R31 and R32, 1st pin of described chip U7 is connected with the 2nd pin of chip U7 by resistance R23, and by nonpolar electric capacity C24 ground connection, 2nd pin of described chip U7 and the 9th pin all connect with the β low-voltage signal output terminal V-β L of described first pulse signal shaping circuit, 6th pin of described chip U7 is connected with the 7th pin of chip U7 by nonpolar electric capacity C28, 7th pin of described chip U7 is connected with the output terminal of+5V power supply by resistance R32, 10th pin of described chip U7 is connected with the 9th pin of chip U7 by resistance R31, and by nonpolar electric capacity C29 ground connection, 11st pin of described chip U7 connects with the β high-voltage signal output terminal V-β H of described first pulse signal shaping circuit, 14th pin of described chip U7 is connected with the 15th pin of chip U7 by nonpolar electric capacity C26, 15th pin of described chip U7 is connected with the 16th pin of chip U7 by resistance R22, 16th pin of described chip U7 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C21 ground connection, 13rd pin of described chip U7 is the β count signal output terminal of the first monostable circuit.
Above-mentioned a kind of α, β radiating surface pollution detection device, it is characterized in that: described α pulse signal discriminator circuit is made up of the second pulse signal shaping circuit for pulse signal being converted to square-wave signal and the second monostable circuit of connecting with the second pulse signal shaping circuit, described second pulse signal shaping circuit comprises the chip U8 that model is MAX991, nonpolar electric capacity C27 and C30, and resistance R26, R27 and R28, 2nd pin of described chip U8 connects with the output terminal of in-phase amplification circuit, 3rd pin of described chip U5 connects with one end of one end of resistance R28 and nonpolar electric capacity C27, the other end of described resistance R28 is connected to described α threshold voltage, 1st pin of described chip U5 is the alpha signal output terminal V-α of the second pulse signal shaping circuit and by the resistance R27 that connects successively and resistance R26 ground connection, the other end of described nonpolar electric capacity C27 connects with the link of resistance R27 and resistance R26, the 4th pin ground connection of described chip U8, the 8th pin of described chip U8 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C30 ground connection, described second monostable circuit comprises the chip U6 that model is 74HC123D, nonpolar electric capacity C22 and C25, and resistance R21, 1st pin of described chip U6 connects with the alpha signal output terminal V-α of described second pulse signal shaping circuit, 2nd pin and the 3rd pin of described chip U6 all connect with the output terminal of+5V power supply, the 8th pin ground connection of described chip U6, 14th pin of described chip U6 is connected with the 15th pin of chip U6 by nonpolar electric capacity C25, 15th pin of described chip U6 is connected with the 16th pin of chip U6 by resistance R21, 16th pin of described chip U6 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C22 ground connection, 13rd pin of described chip U6 is the α count signal output terminal of the second monostable circuit.
Above-mentioned a kind of α, β radiating surface pollution detection device, it is characterized in that: described β upper threshold voltage is 2V, described β threshold voltages is 100mV, and described α threshold voltage is 2.1V.
The utility model compared with prior art has the following advantages:
1, the utility model have employed the plastic scintillant that surface is provided with ZnS coating, and carries out light collection in conjunction with optical conductor, and it is without the need to working gas, and it is simple and direct, convenient without day-to-day operation consumption, to install, debug and safeguard.
2, the utility model uses photoconduction physical efficiency effectively to improve detector efficiency, and detector uniformity index is very good.
3, the utility model is provided with the metallized film measuring surface of scintillator being carried out to lucifuge process, and together with the bottom surface of scintillator and optical conductor fitted tightly by silicone oil couplant, the scintillation photons that scintillator produces is propagated by optical conductor, run into reflection horizon to be reentered in optical conductor by reflection and propagate, reflection horizon photon energy loss is less, photon finally enters into the photomultiplier of optical conductor side through reflection, is collected by photocathode.Adopt optical conductor to carry out compared with light collects and receives light with air cavity, greatly reduce photon energy loss, compare with gas-flow proportional counter tube detector, the detector uniformity index in sensitive area improves greatly, and the intertrack crosstalk rate of α to β obviously reduces.
4, high, the dependable performance of integrated level of the present utility model, operating cost is low, buying and maintenance cost low, result of use is good, is convenient to promote the use of.
In sum, the utility model is installed, debugs and safeguards simple and direct, convenient, and integrated level is high, and uniformity index is good, and the intertrack crosstalk rate of α to β is low, dependable performance, buying, run, maintenance cost is low, result of use is good, is convenient to promote the use of.
Below by drawings and Examples, the technical solution of the utility model is described in further detail.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the circuit theory diagrams of the utility model prime amplifier.
Fig. 3 is the schematic block circuit diagram of the utility model single-channel pulse amplitude discriminator.
Fig. 4 is the circuit connecting relation schematic diagram of the utility model voltage follower circuit, see-saw circuit and in-phase amplification circuit.
Fig. 5 is the circuit theory diagrams of the utility model first pulse signal shaping circuit.
Fig. 6 is the circuit theory diagrams of the utility model first monostable circuit.
Fig. 7 is the circuit theory diagrams of the utility model second pulse signal shaping circuit.
Fig. 8 is the circuit theory diagrams of the utility model second monostable circuit.
Description of reference numerals:
1-housing; 2-optical conductor; 3-scintillator;
4-film frame; 5-metallized film; 6-guard;
7-mounting pipe; 8-photomultiplier; 9-prime amplifier;
10-single-channel pulse amplitude discriminator; 10-1-voltage follower circuit;
10-2-see-saw circuit; 10-3-in-phase amplification circuit;
10-4-β pulse signal discriminator circuit; 10-5-α pulse signal discriminator circuit.
Embodiment
As shown in Figure 1, the utility model comprises for detecting α and/or β ray and forming the probe of electric impulse signal and the prime amplifier 9 that amplifies of electric impulse signal for exporting probe, and connects with the output terminal of prime amplifier 9 and single-channel pulse amplitude discriminator 10 for screening out α pulse signal and β pulse signal in the signal that exports from prime amplifier 9, the optical conductor 2 that described probe comprises housing 1 and is arranged on successively from top to bottom in housing 1, scintillator 3 and film frame 4, together with the bottom surface of described scintillator 3 and optical conductor 2 are fitted tightly by silicone oil couplant, the metallized film 5 for carrying out lucifuge process to the measuring surface of scintillator 3 is puted up at the top of described film frame 4, the top of described metallized film 5 is provided with the guard 6 covering on housing 1 top, the side of described housing 1 is fixedly connected with the mounting pipe 7 with housing 1 intracavity inter-connection, in described mounting pipe 7, photomultiplier 8 is installed, the end window face of described photomultiplier 8 is of coupled connections by couplant and optical conductor 2, the input end of described prime amplifier 9 connects with the output terminal of photomultiplier 8.
In the present embodiment, described scintillator 3 is the plastic scintillant that surface is provided with ZnS coating.
As shown in Figure 2, in the present embodiment, described prime amplifier 9 comprises triode Q1 and Q2, resistance R41, R42, R43, R44, R45, R46, R47, R48 and R49, nonpolar electric capacity C42, and polar capacitor C41, C43, C45 and C46, the base stage of described triode Q1 is the input end SIG-IN of prime amplifier 9, and pass through resistance R47 and the resistance R48 ground connection of series connection, the collector of described triode Q1 connects with the negative pole of polar capacitor C46, and by resistance R49 ground connection, the positive pole of described polar capacitor C6 connects with the base stage of triode Q2, and connected with the emitter of triode Q1 by resistance R45, the emitter of described triode Q1 connects with the positive pole of polar capacitor C43, and by series connection resistance R43 and resistance R41 connect with the output terminal of+12V power supply, one end of described resistance R42 and the negative pole of polar capacitor C43 all connect with the link of resistance R47 and resistance R48, the other end of described resistance R42 connects with the link of resistance R43 and resistance R41, the grounded collector of described triode Q2, the emitter of described triode Q2 connects with the positive pole of polar capacitor C45, and connected with the link of resistance R43 and resistance R41 by resistance R44, the negative pole of described polar capacitor C45 connects with one end of resistance R46, the other end of described resistance R46 is the output terminal SIG-OUT of prime amplifier 9, and the link of described resistance R43 and resistance R41 is by nonpolar electric capacity C42 in parallel and polar capacitor C41 ground connection.
As shown in Figure 3, in the present embodiment, described single-channel pulse amplitude discriminator 10 comprises voltage follower circuit 10-1, the see-saw circuit 10-2 and in-phase amplification circuit 10-3 that connect successively, and the β pulse signal discriminator circuit 10-4 to connect with the output terminal of in-phase amplification circuit 10-3 and α pulse signal discriminator circuit 10-5, the input end of described β pulse signal discriminator circuit 10-4 is connected to β upper threshold voltage and β threshold voltages, and the input end of described α pulse signal discriminator circuit 10-5 is connected to α threshold voltage.
As shown in Figure 4, in the present embodiment, described voltage follower circuit 10-1 comprises the chip U2 that model is THS4281, resistance R1, R6 and R10, polar capacitor C8 and C18, and nonpolar electric capacity C3, C4, C9 and C16, 3rd pin of described chip U2 is connected with the output terminal of prime amplifier 9 by the resistance R6 that connects successively and nonpolar electric capacity C9, the link of described nonpolar electric capacity C9 and resistance R6 is by resistance R10 ground connection, 2nd pin of described chip U2 be connected to resistance R1 in parallel and nonpolar electric capacity C3 between the 6th pin, 7th pin of described chip U2 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C4 in parallel and polar capacitor C8 ground connection, 4th pin of described chip U2 connects with the output terminal of-5V power supply, and by nonpolar electric capacity C16 in parallel and polar capacitor C18 ground connection, 6th pin of described chip U2 is the output terminal of voltage follower circuit 10-1.
As shown in Figure 4, in the present embodiment, described see-saw circuit 10-2 comprises the chip U3 that model is THS4281, resistance R2, R7, R9 and R12, polar capacitor C6, and nonpolar electric capacity C2, C5, C11 and C12, 2nd pin of described chip U3 is connected with the output terminal of voltage follower circuit 10-1 by resistance R7, and by nonpolar electric capacity C11 ground connection, 3rd pin of described chip U3 is by resistance R12 ground connection, the 4th pin ground connection of described chip U3, 2nd pin of described chip U3 be connected to resistance R2 in parallel and nonpolar electric capacity C5 between the 6th pin, 7th pin of described chip U2 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C2 in parallel and polar capacitor C6 ground connection, 6th pin of described chip U2 connects with one end of resistance R9, the other end of described resistance R9 be see-saw circuit 10-2 output terminal and by nonpolar electric capacity C12 ground connection.
As shown in Figure 4, in the present embodiment, described in-phase amplification circuit 10-3 comprises the chip U4 that model is THS4281, slide rheostat R5, resistance R3, R4, R8 and R11, polar capacitor C7, and nonpolar electric capacity C1 and C10, 3rd pin of described chip U4 connects with the output terminal of see-saw circuit 10-2, 2nd pin of described chip U4 connects with one end of resistance R3, and by resistance R4 ground connection, the other end of described resistance R3 connects with a stiff end of slide rheostat R5, the 4th pin ground connection of described chip U4, 6th pin of described chip U4 connects with one end of another stiff end of slide rheostat R5 and sliding end and nonpolar electric capacity C10, the other end of described nonpolar electric capacity C10 connects with one end of resistance R8, and by resistance R11 ground connection, the other end of described resistance R8 is the output terminal Signal of in-phase amplification circuit 10-3, 7th pin of described chip U4 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C1 in parallel and polar capacitor C7 ground connection.
As shown in Figure 5 and Figure 6, in the present embodiment, described β pulse signal discriminator circuit 10-4 is made up of the first pulse signal shaping circuit for pulse signal being converted to square-wave signal and the first monostable circuit of connecting with the first pulse signal shaping circuit, described first pulse signal shaping circuit comprises the chip U5 that model is MAX991, nonpolar electric capacity C19 and C23, and resistance R13, R14, R15, R16, R17 and R18, 2nd pin and the 6th pin of described chip U5 all connect with the output terminal of in-phase amplification circuit 10-3,3rd pin of described chip U5 connects with one end of resistance R16, the other end of described resistance R16 is connected to described β threshold voltages, the 1st pin of described chip U5 be described first pulse signal shaping circuit β low-voltage signal output terminal V-β L and by the resistance R14 that connects successively and resistance R13 ground connection, 5th pin of described chip U5 connects with one end of one end of resistance R15 and nonpolar electric capacity C19, the other end of described resistance R15 is connected to described β upper threshold voltage, 7th pin of described chip U5 is the β high-voltage signal output terminal V-β H of described first pulse signal shaping circuit and by the resistance R18 that connects successively and resistance R17 ground connection, the other end of described nonpolar electric capacity C19 connects with the link of resistance R18 and resistance R17, the 4th pin ground connection of described chip U5, the 8th pin of described chip U5 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C23 ground connection, described first monostable circuit comprises the chip U7 that model is 74HC123D, nonpolar electric capacity C24, C26, C28 and C29, and resistance R22, R23, R31 and R32, 1st pin of described chip U7 is connected with the 2nd pin of chip U7 by resistance R23, and by nonpolar electric capacity C24 ground connection, 2nd pin of described chip U7 and the 9th pin all connect with the β low-voltage signal output terminal V-β L of described first pulse signal shaping circuit, 6th pin of described chip U7 is connected with the 7th pin of chip U7 by nonpolar electric capacity C28, 7th pin of described chip U7 is connected with the output terminal of+5V power supply by resistance R32, 10th pin of described chip U7 is connected with the 9th pin of chip U7 by resistance R31, and by nonpolar electric capacity C29 ground connection, 11st pin of described chip U7 connects with the β high-voltage signal output terminal V-β H of described first pulse signal shaping circuit, 14th pin of described chip U7 is connected with the 15th pin of chip U7 by nonpolar electric capacity C26, 15th pin of described chip U7 is connected with the 16th pin of chip U7 by resistance R22, 16th pin of described chip U7 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C21 ground connection, 13rd pin of described chip U7 is the β count signal output terminal of the first monostable circuit.
As shown in Figure 7 and Figure 8, in the present embodiment, described α pulse signal discriminator circuit 10-5 is made up of the second pulse signal shaping circuit for pulse signal being converted to square-wave signal and the second monostable circuit of connecting with the second pulse signal shaping circuit, described second pulse signal shaping circuit comprises the chip U8 that model is MAX991, nonpolar electric capacity C27 and C30, and resistance R26, R27 and R28, 2nd pin of described chip U8 connects with the output terminal of in-phase amplification circuit 10-3,3rd pin of described chip U5 connects with one end of one end of resistance R28 and nonpolar electric capacity C27, the other end of described resistance R28 is connected to described α threshold voltage, 1st pin of described chip U5 is the alpha signal output terminal V-α of the second pulse signal shaping circuit and by the resistance R27 that connects successively and resistance R26 ground connection, the other end of described nonpolar electric capacity C27 connects with the link of resistance R27 and resistance R26, the 4th pin ground connection of described chip U8, the 8th pin of described chip U8 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C30 ground connection, described second monostable circuit comprises the chip U6 that model is 74HC123D, nonpolar electric capacity C22 and C25, and resistance R21, 1st pin of described chip U6 connects with the alpha signal output terminal V-α of described second pulse signal shaping circuit, 2nd pin and the 3rd pin of described chip U6 all connect with the output terminal of+5V power supply, the 8th pin ground connection of described chip U6, 14th pin of described chip U6 is connected with the 15th pin of chip U6 by nonpolar electric capacity C25, 15th pin of described chip U6 is connected with the 16th pin of chip U6 by resistance R21, 16th pin of described chip U6 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C22 ground connection, 13rd pin of described chip U6 is the α count signal output terminal of the second monostable circuit.
In the present embodiment, described β upper threshold voltage is 2V, and described β threshold voltages is 100mV, and described α threshold voltage is 2.1V.
The utility model can be used as trick α, the hand detector of β contamination monitor and foot's detector, the course of work of the present utility model is: when α or β particle-irradiation scintillator 3, the atomic excitation of scintillator 3 can be made, excited atom is luminous in de excitation process, photon is through scintillator 3 and optical conductor 2, a part arrives the photocathode of photomultiplier 8, photocathode gets photoelectron, photoelectron is through the multiplication of photomultiplier, just an electric impulse signal is produced, single-channel pulse amplitude discriminator 10 is sent into after prime amplifier 9 amplifies, single-channel pulse amplitude discriminator 10 separates signal beta, and export after distinguishing alpha signal and signal beta, for counting assembly counts alpha signal and signal beta, and then judge α, β radiating surface pollution level provides data source.
The above; it is only preferred embodiment of the present utility model; not the utility model is imposed any restrictions; every above embodiment is done according to the utility model technical spirit any simple modification, change and equivalent structure change, all still belong in the protection domain of technical solutions of the utility model.
Claims (10)
1. α, β radiating surface pollution detection device, it is characterized in that: comprise for detecting α and/or β ray and forming the probe of electric impulse signal and the prime amplifier (9) that amplifies of electric impulse signal for exporting probe, and connect with the output terminal of prime amplifier (9) and single-channel pulse amplitude discriminator (10) for screening out α pulse signal and β pulse signal in the signal that exports from prime amplifier (9), described probe comprises housing (1) and is arranged on the optical conductor (2) in housing (1) from top to bottom successively, scintillator (3) and film frame (4), together with the bottom surface of described scintillator (3) and optical conductor (2) are fitted tightly by silicone oil couplant, the metallized film (5) for carrying out lucifuge process to the measuring surface of scintillator (3) is puted up at the top of described film frame (4), the top of described metallized film (5) is provided with the guard (6) covering on housing (1) top, the side of described housing (1) is fixedly connected with the mounting pipe (7) with housing (1) intracavity inter-connection, photomultiplier (8) is installed in described mounting pipe (7), the end window face of described photomultiplier (8) is of coupled connections by couplant and optical conductor (2), the input end of described prime amplifier (9) connects with the output terminal of photomultiplier (8).
2. according to a kind of α, β radiating surface pollution detection device according to claim 1, it is characterized in that: described scintillator (3) is the plastic scintillant that surface is provided with ZnS coating.
3. according to a kind of α, β radiating surface pollution detection device according to claim 1, it is characterized in that: described prime amplifier (9) comprises triode Q1 and Q2, resistance R41, R42, R43, R44, R45, R46, R47, R48 and R49, nonpolar electric capacity C42, and polar capacitor C41, C43, C45 and C46, the base stage of described triode Q1 is the input end SIG-IN of prime amplifier (9), and pass through resistance R47 and the resistance R48 ground connection of series connection, the collector of described triode Q1 connects with the negative pole of polar capacitor C46, and by resistance R49 ground connection, the positive pole of described polar capacitor C6 connects with the base stage of triode Q2, and connected with the emitter of triode Q1 by resistance R45, the emitter of described triode Q1 connects with the positive pole of polar capacitor C43, and by series connection resistance R43 and resistance R41 connect with the output terminal of+12V power supply, one end of described resistance R42 and the negative pole of polar capacitor C43 all connect with the link of resistance R47 and resistance R48, the other end of described resistance R42 connects with the link of resistance R43 and resistance R41, the grounded collector of described triode Q2, the emitter of described triode Q2 connects with the positive pole of polar capacitor C45, and connected with the link of resistance R43 and resistance R41 by resistance R44, the negative pole of described polar capacitor C45 connects with one end of resistance R46, the other end of described resistance R46 is the output terminal SIG-OUT of prime amplifier (9), and the link of described resistance R43 and resistance R41 is by nonpolar electric capacity C42 in parallel and polar capacitor C41 ground connection.
4. according to a kind of α according to claim 1, β radiating surface pollution detection device, it is characterized in that: described single-channel pulse amplitude discriminator (10) comprises the voltage follower circuit (10-1) connected successively, see-saw circuit (10-2) and in-phase amplification circuit (10-3), and the β pulse signal discriminator circuit (10-4) to connect with the output terminal of in-phase amplification circuit (10-3) and α pulse signal discriminator circuit (10-5), the input end of described β pulse signal discriminator circuit (10-4) is connected to β upper threshold voltage and β threshold voltages, the input end of described α pulse signal discriminator circuit (10-5) is connected to α threshold voltage.
5. according to a kind of α, β radiating surface pollution detection device according to claim 4, it is characterized in that: described voltage follower circuit (10-1) comprises the chip U2 that model is THS4281, resistance R1, R6 and R10, polar capacitor C8 and C18, and nonpolar electric capacity C3, C4, C9 and C16, 3rd pin of described chip U2 is connected with the output terminal of prime amplifier (9) by the resistance R6 that connects successively and nonpolar electric capacity C9, the link of described nonpolar electric capacity C9 and resistance R6 is by resistance R10 ground connection, 2nd pin of described chip U2 be connected to resistance R1 in parallel and nonpolar electric capacity C3 between the 6th pin, 7th pin of described chip U2 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C4 in parallel and polar capacitor C8 ground connection, 4th pin of described chip U2 connects with the output terminal of-5V power supply, and by nonpolar electric capacity C16 in parallel and polar capacitor C18 ground connection, 6th pin of described chip U2 is the output terminal of voltage follower circuit (10-1).
6. according to a kind of α, β radiating surface pollution detection device according to claim 4, it is characterized in that: described see-saw circuit (10-2) comprises the chip U3 that model is THS4281, resistance R2, R7, R9 and R12, polar capacitor C6, and nonpolar electric capacity C2, C5, C11 and C12, 2nd pin of described chip U3 is connected with the output terminal of voltage follower circuit (10-1) by resistance R7, and by nonpolar electric capacity C11 ground connection, 3rd pin of described chip U3 is by resistance R12 ground connection, the 4th pin ground connection of described chip U3, 2nd pin of described chip U3 be connected to resistance R2 in parallel and nonpolar electric capacity C5 between the 6th pin, 7th pin of described chip U2 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C2 in parallel and polar capacitor C6 ground connection, 6th pin of described chip U2 connects with one end of resistance R9, the other end of described resistance R9 is the output terminal of see-saw circuit (10-2) and passes through nonpolar electric capacity C12 ground connection.
7. according to a kind of α, β radiating surface pollution detection device according to claim 4, it is characterized in that: described in-phase amplification circuit (10-3) comprises the chip U4 that model is THS4281, slide rheostat R5, resistance R3, R4, R8 and R11, polar capacitor C7, and nonpolar electric capacity C1 and C10, 3rd pin of described chip U4 connects with the output terminal of see-saw circuit (10-2), 2nd pin of described chip U4 connects with one end of resistance R3, and by resistance R4 ground connection, the other end of described resistance R3 connects with a stiff end of slide rheostat R5, the 4th pin ground connection of described chip U4, 6th pin of described chip U4 connects with one end of another stiff end of slide rheostat R5 and sliding end and nonpolar electric capacity C10, the other end of described nonpolar electric capacity C10 connects with one end of resistance R8, and by resistance R11 ground connection, the other end of described resistance R8 is the output terminal Signal of in-phase amplification circuit (10-3), 7th pin of described chip U4 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C1 in parallel and polar capacitor C7 ground connection.
8. according to a kind of α, β radiating surface pollution detection device according to claim 4, it is characterized in that: described β pulse signal discriminator circuit (10-4) is made up of the first pulse signal shaping circuit for pulse signal being converted to square-wave signal and the first monostable circuit of connecting with the first pulse signal shaping circuit, described first pulse signal shaping circuit comprises the chip U5 that model is MAX991, nonpolar electric capacity C19 and C23, and resistance R13, R14, R15, R16, R17 and R18, 2nd pin and the 6th pin of described chip U5 all connect with the output terminal of in-phase amplification circuit (10-3), 3rd pin of described chip U5 connects with one end of resistance R16, the other end of described resistance R16 is connected to described β threshold voltages, the 1st pin of described chip U5 be described first pulse signal shaping circuit β low-voltage signal output terminal V-β L and by the resistance R14 that connects successively and resistance R13 ground connection, 5th pin of described chip U5 connects with one end of one end of resistance R15 and nonpolar electric capacity C19, the other end of described resistance R15 is connected to described β upper threshold voltage, 7th pin of described chip U5 is the β high-voltage signal output terminal V-β H of described first pulse signal shaping circuit and by the resistance R18 that connects successively and resistance R17 ground connection, the other end of described nonpolar electric capacity C19 connects with the link of resistance R18 and resistance R17, the 4th pin ground connection of described chip U5, the 8th pin of described chip U5 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C23 ground connection, described first monostable circuit comprises the chip U7 that model is 74HC123D, nonpolar electric capacity C24, C26, C28 and C29, and resistance R22, R23, R31 and R32, 1st pin of described chip U7 is connected with the 2nd pin of chip U7 by resistance R23, and by nonpolar electric capacity C24 ground connection, 2nd pin of described chip U7 and the 9th pin all connect with the β low-voltage signal output terminal V-β L of described first pulse signal shaping circuit, 6th pin of described chip U7 is connected with the 7th pin of chip U7 by nonpolar electric capacity C28, 7th pin of described chip U7 is connected with the output terminal of+5V power supply by resistance R32, 10th pin of described chip U7 is connected with the 9th pin of chip U7 by resistance R31, and by nonpolar electric capacity C29 ground connection, 11st pin of described chip U7 connects with the β high-voltage signal output terminal V-β H of described first pulse signal shaping circuit, 14th pin of described chip U7 is connected with the 15th pin of chip U7 by nonpolar electric capacity C26, 15th pin of described chip U7 is connected with the 16th pin of chip U7 by resistance R22, 16th pin of described chip U7 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C21 ground connection, 13rd pin of described chip U7 is the β count signal output terminal of the first monostable circuit.
9. according to a kind of α, β radiating surface pollution detection device according to claim 4, it is characterized in that: described α pulse signal discriminator circuit (10-5) is made up of the second pulse signal shaping circuit for pulse signal being converted to square-wave signal and the second monostable circuit of connecting with the second pulse signal shaping circuit, described second pulse signal shaping circuit comprises the chip U8 that model is MAX991, nonpolar electric capacity C27 and C30, and resistance R26, R27 and R28, 2nd pin of described chip U8 connects with the output terminal of in-phase amplification circuit (10-3), 3rd pin of described chip U5 connects with one end of one end of resistance R28 and nonpolar electric capacity C27, the other end of described resistance R28 is connected to described α threshold voltage, 1st pin of described chip U5 is the alpha signal output terminal V-α of the second pulse signal shaping circuit and by the resistance R27 that connects successively and resistance R26 ground connection, the other end of described nonpolar electric capacity C27 connects with the link of resistance R27 and resistance R26, the 4th pin ground connection of described chip U8, the 8th pin of described chip U8 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C30 ground connection, described second monostable circuit comprises the chip U6 that model is 74HC123D, nonpolar electric capacity C22 and C25, and resistance R21, 1st pin of described chip U6 connects with the alpha signal output terminal V-α of described second pulse signal shaping circuit, 2nd pin and the 3rd pin of described chip U6 all connect with the output terminal of+5V power supply, the 8th pin ground connection of described chip U6, 14th pin of described chip U6 is connected with the 15th pin of chip U6 by nonpolar electric capacity C25, 15th pin of described chip U6 is connected with the 16th pin of chip U6 by resistance R21, 16th pin of described chip U6 connects with the output terminal of+5V power supply, and by nonpolar electric capacity C22 ground connection, 13rd pin of described chip U6 is the α count signal output terminal of the second monostable circuit.
10., according to a kind of α, β radiating surface pollution detection device according to claim 4, it is characterized in that: described β upper threshold voltage is 2V, described β threshold voltages is 100mV, and described α threshold voltage is 2.1V.
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| CN201420693650.4U CN204203472U (en) | 2014-11-18 | 2014-11-18 | A kind of α, β radiating surface pollution detection device |
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| CN201420693650.4U CN204203472U (en) | 2014-11-18 | 2014-11-18 | A kind of α, β radiating surface pollution detection device |
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| CN104898152A (en) * | 2015-06-12 | 2015-09-09 | 同方威视技术股份有限公司 | Method and device for fixing photomultiplier on housing of scintillator detector |
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| CN106842274B (en) * | 2017-03-30 | 2024-01-19 | 成都理工大学 | Alpha/beta surface pollution array detector and detection system |
| CN107144869A (en) * | 2017-06-19 | 2017-09-08 | 中广核久源（成都）科技有限公司 | A kind of tritium surface contamination survey meter |
| CN108459341A (en) * | 2018-04-03 | 2018-08-28 | 山西中辐核仪器有限责任公司 | It is a kind of to use Plastic scintillation bulk measurement α, Beta-ray detector |
| CN108335561A (en) * | 2018-04-21 | 2018-07-27 | 中国人民解放军第五三七医院 | Personnel's body surface radiocontamination detects live simulation training system and training method |
| CN110837098A (en) * | 2018-08-16 | 2020-02-25 | 同方威视技术股份有限公司 | Method, FPGA, device and storage medium for discriminating pulse signal |
| CN110082809A (en) * | 2019-05-23 | 2019-08-02 | 上海仁机仪器仪表有限公司 | α, β and γ surface contamination analyzer detector and its assemble method based on MPPC array |
| CN112180420A (en) * | 2020-04-21 | 2021-01-05 | 宁波甬东核辐射监测有限公司 | Plastic scintillator and preparation method thereof, and beta particle detector |
| CN112994633A (en) * | 2021-02-25 | 2021-06-18 | 中国空气动力研究与发展中心超高速空气动力研究所 | Photoelectric induction circuit and device for wind tunnel ballistic target free flight model detection |
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Address after: Yanta District in Shaanxi province Xi'an City Road 710061, No. 108 Patentee after: Xi'an central Nuclear Instrument Co., Ltd. Address before: Xi'an City, Shaanxi province 710061 Hamlet Road No. 108 Patentee before: Xi'an Nuclear Instrument Factory |
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Address after: Yanta District in Shaanxi province Xi'an City Road 710061, No. 108 Patentee after: Xi'an Zhonghe Nuclear Instrument Co.,Ltd. Address before: Yanta District in Shaanxi province Xi'an City Road 710061, No. 108 Patentee before: XI'AN ZHONGHE NUCLEAR APPARATUS CO.,LTD. |