CN204189929U - City wall shape THz wave filter - Google Patents
City wall shape THz wave filter Download PDFInfo
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- CN204189929U CN204189929U CN201420683369.2U CN201420683369U CN204189929U CN 204189929 U CN204189929 U CN 204189929U CN 201420683369 U CN201420683369 U CN 201420683369U CN 204189929 U CN204189929 U CN 204189929U
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- rete
- thin rectangular
- thz wave
- wave filter
- wall shape
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Abstract
The utility model discloses a kind of city wall shape THz wave filter.It comprises signal input part, the first square film layer, the first Thin Rectangular rete, the second Thin Rectangular rete, the 3rd Thin Rectangular rete, signal output part; Be connected with five the first square film layers respectively on the upside of first Thin Rectangular rete; Signal inputs from signal input part, and arriving signal output after the first square film layer, the first Thin Rectangular rete, the second Thin Rectangular rete, the 3rd Thin Rectangular rete, according to the guide mode resonance principle of thin layer, realizes the filtering to signal successively.The utility model have fast response time, selectivity high, be with roomy, size is little, volume is little, lightweight, save material, be convenient to make and be easy to the advantage such as integrated.
Description
Technical field
The utility model relates to filter, particularly relates to a kind of city wall shape THz wave filter.
Background technology
Terahertz Technology is a kind of new technology that twentieth century grows up the end of the eighties.Terahertz frequency domain refers to that frequency is at 0.1THz ~ 10THz, cover molecular vibration and the rotation spectrum of most macromolecular substances, therefore most macromolecular substances all has obvious dactylogram characteristic at its absorption spectra of Terahertz frequency range, reflectance spectrum or emission spectra, and this point is not available for microwave.In addition, THz wave can penetrate most material to some extent, and this feature is not available for infrared radiation.These features determine the value that Terahertz Technology exists, growing THz wave technology all has great scientific value and wide application prospect in astronomy, biomedicine, safety and environmental monitoring, imaging, broadband wireless communications and radar etc., wherein the THz wave communication technology has the characteristic of millimetre-wave attenuator and optical communication, can be applied to the aspects such as indoor local area network communication.Research institution in the world about THz wave emerges in multitude, and achieves a lot of achievement in research, and Terahertz Technology will be the focus of extensively research in following a very long time world wide.
Recent domestic launches gradually for the research of THz wave function element, that Present Domestic is studied outward and the THz wave filter construction proposed is mainly based on the structure such as photonic crystal, surface plasma, these structures are often very complicated, and it is difficult in actual fabrication process, cost is higher, requires also high to processing technology and processing environment.So little, lightweight in the urgent need to proposition size, to be convenient to processing and fabricating THz wave filter is to support the development of THz wave application.
Summary of the invention
The purpose of this utility model overcomes the deficiencies in the prior art, provides a kind of city wall shape THz wave filter.
City wall shape THz wave filter comprises signal input part, the first square film layer, the first Thin Rectangular rete, the second Thin Rectangular rete, the 3rd Thin Rectangular rete, signal output part; Be connected with five the first square film layers respectively on the upside of first Thin Rectangular rete; Signal inputs from signal input part, and arriving signal output after the first square film layer, the first Thin Rectangular rete, the second Thin Rectangular rete, the 3rd Thin Rectangular rete, according to the guide mode resonance principle of thin layer, realizes the filtering to signal successively.
The thickness of the described first square transport layer is 10 ~ 13 μm.The thickness of the first described Thin Rectangular rete is 20 ~ 22 μm.The thickness of the second described Thin Rectangular rete is 30 ~ 32 μm.The thickness of the 3rd described Thin Rectangular rete is 38 ~ 40 μm.Described first square transport layer and the second rectangular film layer material are High Resistivity Si material, and Refractive Index of Material is 3.2.The first described Thin Rectangular rete and the material of the 3rd Thin Rectangular rete are earth silicon material, and Refractive Index of Material is 1.45.
The utility model have fast response time, selectivity high, be with roomy, size is little, volume is little, lightweight, save material, be convenient to make and be easy to the advantage such as integrated.
Accompanying drawing illustrates:
Fig. 1 is the two-dimensional structure schematic diagram of city wall shape THz wave filter;
Fig. 2 is the three-dimensional structure schematic diagram of city wall shape THz wave filter;
Fig. 3 is city wall shape THz wave performance of filter curve.
Embodiment
As shown in Fig. 1 ~ 2, city wall shape THz wave filter comprises signal input part 1, first square film layer 2, first Thin Rectangular rete 3, second Thin Rectangular rete 4, the 3rd Thin Rectangular rete 5, signal output part 6; Be connected with five the first square film layers 2 respectively on the upside of first Thin Rectangular rete 3; Signal inputs from signal input part 1, arriving signal output 6 after the first square film layer 2, first Thin Rectangular rete 3, second Thin Rectangular rete 4, the 3rd Thin Rectangular rete 5 successively, according to the guide mode resonance principle of thin layer, realize the filtering to signal.
The thickness of the described first square transport layer 2 is 10 ~ 13 μm.The thickness of the first described Thin Rectangular rete 3 is 20 ~ 22 μm.The thickness of the second described Thin Rectangular rete 4 is 30 ~ 32 μm.The thickness of the 3rd described Thin Rectangular rete 5 is 38 ~ 40 μm.Described first square transport layer 2 and the second Thin Rectangular rete 4 material are High Resistivity Si material, and Refractive Index of Material is 3.2.The first described Thin Rectangular rete 3 and the material of the 3rd Thin Rectangular rete 5 are earth silicon material, and Refractive Index of Material is 1.45.
Embodiment 1
City wall shape THz wave filter the thickness of the first square transport layer be 10 μm.The thickness of the first Thin Rectangular rete is 20 μm.The thickness of the second Thin Rectangular rete is 30 μm.The thickness of the 3rd Thin Rectangular rete is 38 μm.First square transport layer and the second rectangular film layer material are High Resistivity Si material, and Refractive Index of Material is 3.2.The material of the first Thin Rectangular rete and the 3rd Thin Rectangular rete is earth silicon material, and Refractive Index of Material is 1.45.Recording this filter centre frequency point with THz-TDS is 1.96THz, and the return loss S11 of this point is-29.5dB, and insertion loss S21 is-0.04dB, and bandwidth is 0.02THz; This illustrates that the city wall shape THz wave filter of design has good filtering characteristic.
Claims (8)
1. a city wall shape THz wave filter, is characterized in that comprising signal input part (1), the first square film layer (2), the first Thin Rectangular rete (3), the second Thin Rectangular rete (4), the 3rd Thin Rectangular rete (5), signal output part (6); First Thin Rectangular rete (3) upside is connected with five the first square film layers (2) respectively; Signal inputs from signal input part (1), arriving signal output (6) after the first square film layer (2), the first Thin Rectangular rete (3), the second Thin Rectangular rete (4), the 3rd Thin Rectangular rete (5) successively, according to the guide mode resonance principle of thin layer, realize the filtering to signal.
2. a kind of city wall shape THz wave filter according to claim 1, is characterized in that the thickness of the first described square transport layer (2) is 10 ~ 13 μm.
3. a kind of city wall shape THz wave filter according to claim 1, it is characterized in that five described the first square transport layers (2) adjacent between spacing be 17 ~ 20 μm.
4. a kind of city wall shape THz wave filter according to claim 1, is characterized in that the thickness of the first described Thin Rectangular rete (3) is 20 ~ 22 μm.
5. a kind of city wall shape THz wave filter according to claim 1, is characterized in that the thickness of the second described Thin Rectangular rete (4) is 30 ~ 32 μm.
6. a kind of city wall shape THz wave filter according to claim 1, is characterized in that the thickness of the 3rd described Thin Rectangular rete (5) is 38 ~ 40 μm.
7. a kind of city wall shape THz wave filter according to claim 1, it is characterized in that the first described square transport layer (2) and the second Thin Rectangular rete (4) material are High Resistivity Si material, Refractive Index of Material is 3.2.
8. a kind of city wall shape THz wave filter according to claim 1, it is characterized in that the material of the first described Thin Rectangular rete (3) and the 3rd Thin Rectangular rete (5) is earth silicon material, Refractive Index of Material is 1.45.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201420683369.2U CN204189929U (en) | 2014-11-14 | 2014-11-14 | City wall shape THz wave filter |
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CN201420683369.2U CN204189929U (en) | 2014-11-14 | 2014-11-14 | City wall shape THz wave filter |
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CN204189929U true CN204189929U (en) | 2015-03-04 |
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CN201420683369.2U Expired - Fee Related CN204189929U (en) | 2014-11-14 | 2014-11-14 | City wall shape THz wave filter |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106654471A (en) * | 2016-12-23 | 2017-05-10 | 中国计量大学 | Adjustable TeraHertz wave filter of zigzag molybdenum disulfide thin film structure |
CN106684511A (en) * | 2016-12-28 | 2017-05-17 | 中国计量大学 | Adjustable terahertz wave filter based on tungsten sulfide film structure |
-
2014
- 2014-11-14 CN CN201420683369.2U patent/CN204189929U/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106654471A (en) * | 2016-12-23 | 2017-05-10 | 中国计量大学 | Adjustable TeraHertz wave filter of zigzag molybdenum disulfide thin film structure |
CN106654471B (en) * | 2016-12-23 | 2018-12-14 | 中国计量大学 | Zigzag molybdenum disulfide film structure is adjustable THz wave filter |
CN106684511A (en) * | 2016-12-28 | 2017-05-17 | 中国计量大学 | Adjustable terahertz wave filter based on tungsten sulfide film structure |
CN106684511B (en) * | 2016-12-28 | 2019-02-19 | 中国计量大学 | Based on the adjustable THz wave filter of tungsten sulfide membrane structure |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150304 Termination date: 20151114 |
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EXPY | Termination of patent right or utility model |