CN204177921U - The aging contrast test platform of a kind of MOSFET invariable power - Google Patents
The aging contrast test platform of a kind of MOSFET invariable power Download PDFInfo
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- CN204177921U CN204177921U CN201420445671.4U CN201420445671U CN204177921U CN 204177921 U CN204177921 U CN 204177921U CN 201420445671 U CN201420445671 U CN 201420445671U CN 204177921 U CN204177921 U CN 204177921U
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Abstract
The aging contrast test platform of a kind of MOSFET invariable power of the utility model, comprises the burn in test circuit that some cascades are arranged; Burn in test circuit comprises power supply, current setting circuit, Voltage Cortrol power supply, feedback control circuit, EUT measured device, electric current and voltage display circuit, current sampling circuit; The output terminal of power supply connects current setting circuit, feedback control circuit and electric current and voltage display circuit respectively and is respectively its power supply; Feedback control circuit adopts operational amplifier; The signal that current setting circuit exports and the signal that current sampling circuit exports access positive input and the reverse input end of operational amplifier respectively, and the current controling signal exported after computing contrast is connected to the grid of EUT measured device; The drain electrode of EUT measured device connects Voltage Cortrol power supply; Electric current and voltage display circuit comprises voltage table and reometer, and on the drain electrode that voltage table is connected to EUT measured device and source electrode, reometer is connected to the two ends of voltage sampling circuit.
Description
Technical field
The utility model relates to the proving installation of MOSFET, is specially the aging contrast test platform of a kind of MOSFET invariable power.
Background technology
MOSFET is as the Themaincontroller of power electronic product, and it is as the control performer of Switching Power Supply both all kinds of power electronic product, and the fine or not direct relation of its performance the quality of whole Quality of electronic products.Therefore how to carry out system to each performance of MOSFET comprehensively to test, so that each producer effectively controls quality, seem very important.MOSFET invariable power aging contrast test platform, as a kind of testing tool of fairly simple economy, has extremely important promotional value.
In prior art, for the test of MOSFET, corresponding mature equipment is many, the various test that is dynamic and static parameter of MOSFET has corresponding equipment, but these equipment prices all costly, purchase without corresponding strength as medium and small sized enterprises, simultaneously, in the middle of prior art, carry out to MOSFET the experiment that aging and two MOSFET of the constant power of individual devices carry out equal-wattage contrast also all cannot carry out, there is not corresponding experimental apparatus yet, the demand that client tests single MOSFET cannot be met, and the MOSFET of two same specifications of different brands or close specification is carried out to the demand of contrast test.
Utility model content
For problems of the prior art, the utility model provides a kind of both can carry out individual devices to MOSFET and carry out the aging of setting power, also can carry out the aging contrast test platform of MOSFET invariable power of equal-wattage contrast to many MOSFET simultaneously.
The utility model is achieved through the following technical solutions:
The aging contrast test platform of a kind of MOSFET invariable power, comprises the burn in test circuit that some cascades are arranged; Described burn in test circuit comprises power supply, current setting circuit, Voltage Cortrol power supply, feedback control circuit, EUT measured device, electric current and voltage display circuit, current sampling circuit; The output terminal of power supply connects current setting circuit, feedback control circuit and electric current and voltage display circuit respectively for its power supply; Feedback control circuit adopts operational amplifier; The signal that current setting circuit exports and the signal that current sampling circuit exports access positive input and the reverse input end of operational amplifier respectively, and the current controling signal exported after computing contrast is connected to the grid of EUT measured device; The drain electrode of EUT measured device connects Voltage Cortrol power supply; Electric current and voltage display circuit comprises voltage table and reometer, on the drain electrode that voltage table is connected to EUT measured device and source electrode, reometer is connected to the two ends of voltage sampling circuit, one end ground connection of voltage collection circuit, being connected on EUT measured device source electrode of the other end.
Preferably, current setting circuit comprises the divider resistance of adjustable resistance, potentiometer and the grounding connection being connected to power supply output terminal in turn; The moving contact of adjustable resistance is connected with the output terminal of power supply, and the moving contact of potentiometer is connected to the positive input of operational amplifier LM358.
Preferably, Voltage Cortrol power acquisition range of adjustment is at the adjustable voltage power supply of 5 ~ 50V, and the output terminal of adjustable voltage power supply is connected with the drain electrode of fuse with EUT measured device through gauge tap successively.
Preferably, operational amplifier adopts operational amplifier LM358, and the output terminal of operational amplifier LM358 connects one end of protective resistance; The other end of protective resistance connects the grid of EUT measured device, and the filtering circuit through being made up of the first resistance and the first capacitances in series is connected the drain electrode of EUT measured device; The reverse input end of the source electrode concatenation operation amplifier LM358 of EUT measured device, and be connected by the output terminal of diode with operational amplifier LM358, EUT measured device is connected with the positive pole of diode.
Preferably, EUT measured device adopts the high temperature resistant mount pad of TO-3P to be connected in burn in test circuit.
Preferably, the voltage table in electric current and voltage display circuit and reometer are connected respectively to power supply and ground connection is arranged.
Preferably, current sampling circuit is made up of the second resistance, the 3rd resistance, the 4th resistance and the 5th resistance; With the 4th resistance in parallel and the 5th resistant series ground connection after second resistance and the 3rd resistor coupled in parallel.
Compared with prior art, the utility model has following useful technique effect:
The utility model realizes electric current to EUT measured device and voltage-regulation respectively by the independent power supply that arranges and Voltage Cortrol power supply, thus ensure that the constant of EUT measured device power, adopts operational amplifier to achieve FEEDBACK CONTROL in Current adjustment; By the setting of current sampling circuit, the voltage that can not only export Voltage Cortrol power supply carries out distribution and regulates, and can drain current be collected, utilize reometer to realize display in real time, coordinate the real-time display of drain-source voltage on voltage table, complete and the burn-in test of some MOSFET in the burn-in test of a MOSFET or the burn in test circuit of some cascades is contrasted, react the performance difference of different MOSFET, structure is simple, with low cost, easy to use, strong adaptability.
Further, arranged by the resistance of series connection multiple in current setting circuit, for constant power supply input realization to the control of input current and adjustment, and aging circuit and EUT measured device can be protected.
Further, by selecting of Voltage Cortrol power supply, expand its scope of application; Utilize fuse to shield to circuit, and utilize the setting of mount pad to achieve test to EUT measured device more easily.
Further, utilize the current signal that filtering circuit provides stable, by the one-way conduction arranging guarantee feedback current of diode, ensure that the accuracy of electronic feedback; Combination through four resistor coupled in parallel and series connection is arranged, and realize the distribution of sampling to electric current and voltage, structure is simple, and stability is high.
Accompanying drawing explanation
Fig. 1 is the burn in test circuit anatomical connectivity block diagram described in the utility model example.
Fig. 2 is the circuit diagram of test board described in the utility model example.
Fig. 3 is the circuit diagram of burn in test circuit described in the utility model example.
Wherein: 1 is power supply, 2 is current setting circuit, and 3 is Voltage Cortrol power supply, and 4 is feedback control circuit, and 5 is EUT measured device, and 6 is electric current and voltage display circuit, and 7 is current sampling circuit.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in further detail:
The aging contrast test platform of a kind of MOSFET invariable power of the utility model, comprises the burn in test circuit that some cascades are arranged; As shown in Figure 1, burn in test circuit comprises power supply 1 and can power for whole test board, current setting circuit 2 can give the current value that we need of the current settings on EUT measured device, Voltage Cortrol power supply 3 can give on EUT measured device given we need fixed voltage value, feedback control circuit 4, EUT measured device 5, electric current and voltage display circuit 6, current sampling circuit 7; The output terminal of power supply 1 connects current setting circuit 2, feedback control circuit 4 and electric current and voltage display circuit 6 respectively and is respectively its power supply; As shown in Figures 2 and 3, feedback control circuit 4 adopts operational amplifier LM358, the signal that current setting circuit 2 exports and the signal that current sampling circuit 7 exports access positive input and the reverse input end of operational amplifier respectively, and the current controling signal exported after computing contrast is connected to the grid of EUT measured device 5; The drain electrode of EUT measured device 5 connects Voltage Cortrol power supply 3; Electric current and voltage display circuit 6 comprises voltage table and reometer, on the drain electrode that voltage table is connected to EUT measured device 5 and source electrode, reometer is connected to the two ends of voltage sampling circuit 7, one end ground connection of voltage collection circuit 7, being connected on EUT measured device 5 source electrode of the other end.
As shown in Figures 2 and 3, current setting circuit 2 comprises the divider resistance R41 of adjustable resistance R21, potentiometer R25 and the grounding connection being connected to power supply 1 output terminal in turn; The moving contact of adjustable resistance R21 is connected with the output terminal of power supply 1, and the moving contact of potentiometer R25 is connected to the positive input of operational amplifier.
As shown in Figures 2 and 3, Voltage Cortrol power supply 3 adopts range of adjustment at the adjustable voltage power supply ADJ5-50VDC of 5 ~ 50V, and the output terminal of adjustable voltage power supply ADJ5-50VDC is connected with the drain electrode of EUT measured device 5 with fuse F3 through gauge tap successively.
As shown in Figures 2 and 3, operational amplifier preferably adopts the output terminal of operational amplifier LM358 to connect one end of protective resistance R35; The other end of protective resistance R35 connects the grid of EUT measured device 5, and the filtering circuit through being composed in series by the first resistance R36 and the first electric capacity C11 is connected the drain electrode of EUT measured device 5; The reverse input end of the source electrode concatenation operation amplifier LM358 of EUT measured device 5, and be connected with the output terminal of operational amplifier LM358 by diode D17, EUT measured device 5 is connected with the positive pole of diode D17.In this preferred embodiment, EUT measured device 5 adopts the high temperature resistant mount pad of TO-3P to be connected in burn in test circuit, can also test the device of the multiple encapsulation such as TO-220, TO-247.
As shown in Figures 2 and 3, the voltage table in electric current and voltage display circuit 6 and reometer are connected respectively to power supply 1 and ground connection is arranged.Current sampling circuit 7 is made up of the second resistance R42, the 3rd resistance R43, the 4th resistance R44 and the 5th resistance R45; To connect with the 4th resistance R44 of parallel connection and the 5th resistance R45 after second resistance R42 and the 3rd resistance R43 parallel connection ground connection.
During use, the adjustment of current setting circuit 2 pairs of electric currents belongs to and independently regulates, and has nothing to do, can ensure its Stability and veracity regulated with the voltage of EUT measured device; Cascade is carried out by the repetitive based on burn in test circuit, the invariable power burn-in test to single MOSFET can not only be realized, and the burn in test circuit of cascade can be utilized to complete two, or even the invariable power burn-in test of more MOSFET and contrast.
Concrete, as shown in Figure 1, adjustable resistance R21 is connected on the power supply of positive 12V, carries out the adjustment of system dividing potential drop by adjustable resistance R21; The other end of adjustable resistance R21 is connected on potentiometer R25, and regulate the size by electric current on EUT measured device Q3 by potentiometer R25, divider resistance R41 is connected to the other end of adjustable resistance R25; The tap of adjustable resistance R25 is connected to the input end in the same way of LM358, compares with its reverse input end; LM358 is connected to the power supply of positive and negative 12V simultaneously, powers to amplifier; The output termination protective resistance R35 of LM358, the other end of protective resistance R35 is directly connected to our measured device, drives our measured device Q3 to work; The drain-source pole of measured device connects voltmeter head V3, the real-time voltage measuring our measured device drain-source pole; The drain electrode of measured device is connected to fuse simultaneously, shields to circuit; Other one section of fuse is connected to main circuit power-feed section ADJ5-50VDC, for circuit provides one 5 to the adjustable voltage of 50V; The source electrode of measured device Q3 connects by R42, R43, R44, R45 two and two goes here and there the resistance formed, resistance is connected to ground wire, the two ends of resistance are connected to reometer I4, the size of our measured device electric current of real-time display, reometer I4 and voltage table V3 is connected to ground wire and positive 5V power supply simultaneously, for the work of gauge outfit is powered; The circuit on the right is with this full symmetric, and function is identical.
Aging comparison process describes: as shown in Figure 2, we are when carrying out device aging, measured device is installed to Q3, the measured device installation place of Q4, then by current setting circuit and voltage-regulating circuit, the power to measured device sets, after having set, the time then needed according to us carries out aging, sees whether device can by aging at the appointed time; When contrasting device, we to note to the electric current of two devices and voltage necessarily need to set the same, so just can contrast the otherness of two devices.The utility model only can be tested independent two devices and aging, and according to the circuit diagram of Fig. 2, the expansion that we can be unlimited, extends to the test quantity that we need.
Claims (7)
1. the aging contrast test platform of MOSFET invariable power, is characterized in that, comprises the burn in test circuit that some cascades are arranged; Described burn in test circuit comprises power supply (1), current setting circuit (2), Voltage Cortrol power supply (3), feedback control circuit (4), EUT measured device (5), electric current and voltage display circuit (6), current sampling circuit (7);
The output terminal of described power supply (1) connects current setting circuit (2), feedback control circuit (4) and electric current and voltage display circuit (6) respectively for its power supply;
Described feedback control circuit (4) adopts operational amplifier; The signal that current setting circuit (2) exports and the signal that current sampling circuit (7) exports access positive input and the reverse input end of operational amplifier respectively, and the current controling signal exported after computing contrast is connected to the grid of EUT measured device (5);
The drain electrode of described EUT measured device (5) connects Voltage Cortrol power supply (3);
Described electric current and voltage display circuit (6) comprises voltage table and reometer, on the drain electrode that voltage table is connected to EUT measured device (5) and source electrode, reometer is connected to the two ends of voltage sampling circuit (7), one end ground connection of voltage collection circuit (7), being connected on EUT measured device (5) source electrode of the other end.
2. the aging contrast test platform of a kind of MOSFET invariable power according to claim 1, it is characterized in that, described current setting circuit (2) comprises the divider resistance (R41) of adjustable resistance (R21), potentiometer (R25) and the grounding connection being connected to power supply (1) output terminal in turn; The moving contact of adjustable resistance (R21) is connected with the output terminal of power supply (1), and the moving contact of potentiometer (R25) is connected to the positive input of operational amplifier LM358.
3. the aging contrast test platform of a kind of MOSFET invariable power according to claim 1, it is characterized in that, described Voltage Cortrol power supply (3) adopts range of adjustment at the adjustable voltage power supply (ADJ5-50VDC) of 5 ~ 50V, and the output terminal of adjustable voltage power supply (ADJ5-50VDC) is connected with the drain electrode of fuse (F3) with EUT measured device (5) through gauge tap successively.
4. the aging contrast test platform of a kind of MOSFET invariable power according to claim 1, is characterized in that, described operational amplifier adopts operational amplifier LM358, and the output terminal of operational amplifier LM358 connects one end of protective resistance (R35); The other end of protective resistance (R35) connects the grid of EUT measured device (5), and the filtering circuit through being composed in series by the first resistance (R36) and the first electric capacity (C11) is connected the drain electrode of EUT measured device (5); The reverse input end of the source electrode concatenation operation amplifier LM358 of EUT measured device (5), and be connected with the output terminal of operational amplifier LM358 by diode (D17), EUT measured device (5) is connected with the positive pole of diode (D17).
5. the aging contrast test platform of a kind of MOSFET invariable power according to claim 1, is characterized in that, described EUT measured device (5) adopts the high temperature resistant mount pad of TO-3P to be connected in burn in test circuit.
6. the aging contrast test platform of a kind of MOSFET invariable power according to claim 1, is characterized in that, the voltage table in described electric current and voltage display circuit (6) and reometer are connected respectively to power supply (1) and ground connection is arranged.
7. the aging contrast test platform of a kind of MOSFET invariable power according to claim 1, it is characterized in that, described current sampling circuit (7) is made up of the second resistance (R42), the 3rd resistance (R43), the 4th resistance (R44) and the 5th resistance (R45); Second resistance (R42) and the 3rd resistance (R43) rear ground connection of connecting with the 4th resistance (R44) in parallel and the 5th resistance (R45) in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420445671.4U CN204177921U (en) | 2014-08-07 | 2014-08-07 | The aging contrast test platform of a kind of MOSFET invariable power |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420445671.4U CN204177921U (en) | 2014-08-07 | 2014-08-07 | The aging contrast test platform of a kind of MOSFET invariable power |
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| CN204177921U true CN204177921U (en) | 2015-02-25 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105425083A (en) * | 2015-12-29 | 2016-03-23 | 桂林斯壮微电子有限责任公司 | Mos device pk instrument |
| CN110045259A (en) * | 2019-03-28 | 2019-07-23 | 武汉市毅联升科技有限公司 | A kind of LD-TO device aging system |
| CN110568334A (en) * | 2018-06-01 | 2019-12-13 | 河南省无线发射传输管理中心 | power amplifier tube detection device and data processing method |
| CN111474457A (en) * | 2020-04-16 | 2020-07-31 | 西安太乙电子有限公司 | Test device for realizing power aging of field effect transistor |
| CN111983416A (en) * | 2020-08-20 | 2020-11-24 | 无锡摩斯法特电子有限公司 | Method and equipment for aging trench gate VDMOS (vertical double-diffused metal oxide semiconductor) device |
| CN114429743A (en) * | 2022-01-25 | 2022-05-03 | 无锡美科微电子技术有限公司 | Display aging test system and method |
| CN117741410A (en) * | 2024-02-07 | 2024-03-22 | 锦州辽晶电子科技股份有限公司 | High-power hybrid integrated circuit aging system |
| CN117741410B (en) * | 2024-02-07 | 2024-05-14 | 锦州辽晶电子科技股份有限公司 | High-power hybrid integrated circuit aging system |
-
2014
- 2014-08-07 CN CN201420445671.4U patent/CN204177921U/en active Active
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105425083A (en) * | 2015-12-29 | 2016-03-23 | 桂林斯壮微电子有限责任公司 | Mos device pk instrument |
| CN105425083B (en) * | 2015-12-29 | 2018-04-20 | 桂林斯壮微电子有限责任公司 | Mos device pk instrument |
| CN110568334A (en) * | 2018-06-01 | 2019-12-13 | 河南省无线发射传输管理中心 | power amplifier tube detection device and data processing method |
| CN110045259A (en) * | 2019-03-28 | 2019-07-23 | 武汉市毅联升科技有限公司 | A kind of LD-TO device aging system |
| CN110045259B (en) * | 2019-03-28 | 2021-01-05 | 武汉市毅联升科技有限公司 | LD-TO device aging system |
| CN111474457A (en) * | 2020-04-16 | 2020-07-31 | 西安太乙电子有限公司 | Test device for realizing power aging of field effect transistor |
| CN111983416A (en) * | 2020-08-20 | 2020-11-24 | 无锡摩斯法特电子有限公司 | Method and equipment for aging trench gate VDMOS (vertical double-diffused metal oxide semiconductor) device |
| CN114429743A (en) * | 2022-01-25 | 2022-05-03 | 无锡美科微电子技术有限公司 | Display aging test system and method |
| CN114429743B (en) * | 2022-01-25 | 2023-12-22 | 无锡美科微电子技术有限公司 | Display aging test system and method |
| CN117741410A (en) * | 2024-02-07 | 2024-03-22 | 锦州辽晶电子科技股份有限公司 | High-power hybrid integrated circuit aging system |
| CN117741410B (en) * | 2024-02-07 | 2024-05-14 | 锦州辽晶电子科技股份有限公司 | High-power hybrid integrated circuit aging system |
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