CN204156744U - There is the self-device synchronous rectification circuit of Dead Time topological structure - Google Patents
There is the self-device synchronous rectification circuit of Dead Time topological structure Download PDFInfo
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- CN204156744U CN204156744U CN201420578742.8U CN201420578742U CN204156744U CN 204156744 U CN204156744 U CN 204156744U CN 201420578742 U CN201420578742 U CN 201420578742U CN 204156744 U CN204156744 U CN 204156744U
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Abstract
Have a self-device synchronous rectification circuit for Dead Time topological structure, it comprises the rectification circuit that is coupled to transformer secondary, and rectification circuit comprises one for accelerating to turn off the self-driven winding L 1 of series connection and the L2 of driving grid; Be coupled to tap place of described self-driven winding L 1 and L2 and accelerate to turn off the high frequency channel circuit between gate driver circuit; The unidirectional accelerating circuit of the described high frequency channel circuit signal of one control; One crest voltage absorbing circuit, wherein, the opening time of described high frequency channel circuit is not more than the Dead Time of circuit.The utility model by adding a high frequency channel circuit and unidirectional acceleration path diode in self-driven rectification circuit, improve the operating efficiency of Switching Power Supply, and at Dead Time, reduce the degree of depth ON time of the body diode of metal-oxide-semiconductor, thus reduce the temperature of metal-oxide-semiconductor, improve the useful life of metal-oxide-semiconductor, power work is more stable.
Description
Technical field
The utility model relates to high frequency switch power secondary side rectification circuit technical field, particularly relates to a kind of self-device synchronous rectification circuit with Dead Time topological structure.
Background technology
Along with energy-conserving and environment-protective theory is promoted in worldwide, energy-saving and emission-reduction are rooted in the hearts of the people gradually.On the one hand, needing the new forms of energy of Devoting Major Efforts To Developing environmental protection, is exactly the loss reducing the existing energy on the other hand, improves the utilization ratio of the energy.As high frequency switch power design field, the secondary synchronous rectification of power supply is widely used, such as circuit of reversed excitation, the synchronous rectification etc. of forward converter.But for there is the circuit of Dead Time topological structure (as half-bridge circuit, push-pull circuit, full-bridge circuit) in, due to the existence of the Dead Time of main power circuit, the inefficacy at Dead Time of the synchronous rectification of secondary, cause the body diode of metal-oxide-semiconductor to participate in rectification circuit, thus the efficiency of whole Switching Power Supply is reduced a lot.As shown in Figure 1, we are for the circuit of synchronous rectification of half-bridge circuit, the main limit control circuit part of transformer is eliminated in figure, when the conducting of main limit or when turning off, the switching tube Q8 of synchronous rectification, Q3 is corresponding conducting or shutoff also, when the conducting of main limit and or turn off time, in order to avoid the switching tube of mutually connecting is opened or turns off simultaneously, this is because, the switching tubes such as triode need the regular hour when opening or close, namely can not milli undelayed transition, therefore need artificial to enter a delays time to control, thus avoid opening causing short circuit simultaneously, the situation of damage equipment or circuit.Now produce Dead Time, at this moment the body diode of Q8, Q3 completes the work of rectification, at this moment body diode loss we can press formula to calculate:
Wherein, P
oUTfor power output, V
oUTfor output voltage, V
dthe forward voltage drop of body diode, f
sfor switching frequency.
As can be seen from formula above we, the forward voltage drop of body diode, Dead Time t
delay, the switching frequency of power supply we can use up maximum may reducing, but power output, output voltage this determined by user, we cannot select.If the power exported like this is larger, the loss of the body diode of metal-oxide-semiconductor is also larger, when the power exported arrives greatly certain degree, output voltage Vout is low to certain degree simultaneously, the loss of body diode also just strengthens, its efficiency will decline, and particularly for the high power switching power supply of some low-voltage, high-currents, the circuit of synchronous rectification of this self-powered cannot realize the high efficiency object of circuit of synchronous rectification at all.
Utility model content
The purpose of this utility model is to provide a kind of self-device synchronous rectification circuit with Dead Time topological structure, for solving the inefficient problem of high frequency switch power secondary synchronous rectification with Dead Time in prior art.
For achieving the above object, the technical scheme that the utility model proposes is:
A kind of self-device synchronous rectification circuit with Dead Time topological structure of the present utility model, it comprises the rectification circuit that is coupled to transformer secondary, and wherein said rectification circuit comprises: one for accelerating the self-driven winding L 1 of series connection and the L2 of the driving grid turned off; High frequency channel circuit between the centre cap place being coupled to described self-driven winding L 1 and L2 and the gate driver circuit accelerating shutoff, described high frequency channel circuit comprises: a resistance R04, described resistance R04 two ends are parallel with an electric capacity C08, and described resistance R04 and electric capacity C08 forms RC network jointly; The unidirectional accelerating circuit of the described high frequency channel circuit signal of one control; One crest voltage absorbing circuit, described crest voltage absorbing circuit is coupled to self-driven winding two ends, and wherein, the opening time of described high frequency channel circuit is not more than the Dead Time of circuit.
Wherein, it mainly meets the tendency in main power and opens up the rectification circuit that benefit structure is Half bridge rectifier circuit, the secondary side of push-pull circuit or full-bridge circuit.
Wherein, described rectification circuit comprises: two self-driven winding L 1 of series connection and L2, the metal-oxide-semiconductor Q3 of synchronous rectification, Q4; Triode Q9, Q10, unidirectional accelerating diode D11, D12, D3, D4; Resistance R03 and R06; Wherein, one end of described self-driven winding L 1 is connected to the positive pole of described diode D12, and the negative pole of described diode D12 is connected to the G pole of described metal-oxide-semiconductor Q3 and the emitter of described triode Q9, and the D pole of metal-oxide-semiconductor Q3 is connected to one end of transformer secondary; One end of described self-driven winding L 2 is connected to the positive pole of described diode D11, and the negative pole of diode D11 is connected to the G pole of described metal-oxide-semiconductor Q4 and the emitter of triode Q10, and the D pole of metal-oxide-semiconductor Q4 is connected to other one end of transformer secondary; Be connected to self-driven winding coil L1, the node between L2 after the collector electrode of described triode Q9 with Q10 is directly connected, and the S of described metal-oxide-semiconductor Q3 with Q4 is also connected to self-driven winding coil L1 after being extremely directly connected, the node between L2; Be connected to the positive pole of diode D12 after the base series one resistance R06 of wherein said triode Q9, be connected to the positive pole of diode D11 after the base series one resistance R03 of described triode Q10, composition accelerates the gate driver circuit turned off.
Wherein, described unidirectional accelerating circuit comprises and is connected to node between described resistance R05 and R06 and a diode D3 of node between resistance R04 and electric capacity C08, and is connected to node between described electric capacity C10 and resistance R03 and the diode D4 of node between resistance R04 and electric capacity C08.
Wherein, described crest voltage absorbing circuit comprises resistance R05 and the electric capacity C10 of a series connection, and crest voltage absorbing circuit is connected across described self-driven winding coil L1 and L2 two ends.
Wherein, described triode Q9 and Q10 is PNP pipe, and described triode Q3 and Q4 is metal-oxide-semiconductor.
Wherein, be that the opening time of described high frequency channel is RC.
Compared with prior art, a kind of self-device synchronous rectification circuit with Dead Time topological structure of the present utility model, by adding a high frequency channel in the self-driven winding in rectification circuit, one-way conduction accelerating diode D3, D4 circuit, the Interference absorb circuit of self-driven winding, thus improve the operating efficiency of Switching Power Supply, and at Dead Time, the degree of depth reducing the body diode of metal-oxide-semiconductor participates in conducting demand, reduce the temperature of MOS, reduce the Rds of MOS when conducting, thus it also reduce the conduction loss of metal-oxide-semiconductor, thus improve the useful life of metal-oxide-semiconductor, power work is more stable.
Accompanying drawing explanation
Fig. 1 is the Switching Power Supply rectifier circuit portion circuit diagram of existing a kind of self-device synchronous rectification circuit;
Fig. 2 is a kind of rectifying part circuit diagram with the self-device synchronous rectification circuit of Dead Time topological structure of the present utility model.
Embodiment
Below with reference to accompanying drawing, elaboration is further given to the utility model.
Refer to Fig. 2, the utility model has the self-device synchronous rectification circuit of Dead Time topological structure, and it comprises self-driven winding L 1 and L2 that one is connected across transformer secondary; One rectification circuit, described circuit of synchronous rectification is connected across the two ends of described transformer secondary, and more specifically, described circuit of synchronous rectification is connected to the two ends of the tap of described self-driven winding L 1 and L2; One for continuing the high frequency channel circuit of conducting when circuit is in Dead Time, described high frequency channel circuit is coupled to described rectification circuit, this high frequency channel circuit comprises: a resistance R04, described resistance R04 two ends are parallel with an electric capacity C08, and described resistance R04 and the electric capacity C08 in parallel with it forms a RC network; One crest voltage absorbing circuit, described crest voltage absorbing circuit is coupled to the self-driven winding two ends of described series connection, and the opening time of described high frequency channel circuit is not more than the Dead Time of circuit.Wherein, self-driven winding coil L1 and L2 of described two series connection drives the unilateral bridge of rectification circuit respectively by electromagnetic induction.
Further, described rectification circuit is opened up for main power circuit and is mended the rectification circuit that structure is half-bridge circuit, the secondary side of the high frequency switch power of push-pull circuit or full-bridge circuit.
Detailed, described rectification circuit comprises: two self-driven winding coil L1 and L2 of series connection, triode Q9, Q10; Metal-oxide-semiconductor Q3, Q4; Diode D11, D12, D3, D4; Resistance R03 and R06; Wherein, one end of described self-driven winding coil L1 is connected to the positive pole of described diode D12, the negative pole of described diode D12 is connected to the G pole of described metal-oxide-semiconductor Q3 and the emitter of described triode Q9, and the D pole of described metal-oxide-semiconductor Q3 is connected to one end of transformer secondary; One end of described self-driven winding coil L2 is connected to the positive pole of described diode D11, and the negative pole of diode D11 is connected to the G pole of described metal-oxide-semiconductor Q4 and the emitter of triode Q10, and the D pole of triode Q4 is connected to other one end of transformer secondary; Be connected to induction coil L1, the node between L2 after the collector electrode of described triode Q9 with Q10 is directly connected, and the S of described metal-oxide-semiconductor Q3 with Q4 is also connected to self-driven winding coil L1 after being extremely directly connected, the node between L2; The positive pole of diode D12 is connected to after the base series one resistance R06 of wherein said triode Q9, the positive pole of diode D11 is connected to after the base series one resistance R03 of described triode Q10, accelerate unilateral diode D3, D4 is connected among the circuit of high frequency RC path and devices.Wherein, described triode Q9 and Q10 is PNP pipe, and in the present embodiment, the model of triode Q9 and Q10 is: 2N2907.Described its model of metal-oxide-semiconductor Q3 and Q4 is: IRFP460LC.The model of described diode D3 and D4 is: 1N5819.
Wherein, described crest voltage absorbing circuit comprises resistance R05 and the electric capacity C10 of a series connection, and crest voltage absorbing circuit is connected across described self-driven winding coil L1 and L2 two ends.
Wherein, be connected to node between described resistance R05 and R06 and a diode D3 of node between resistance R04 and electric capacity C08, and be connected between described electric capacity C10 and resistance R03 node and between resistance R04 and electric capacity C08, the diode D4 of node forms the unidirectional accelerating circuit of a control described high frequency channel circuit signal jointly.
In more detail, described high frequency channel circuitous resistance R04 and and electric capacity C08 between a node connect a diode D3 positive pole respectively after be connected to the positive pole of diode D12 and the positive pole of another diode D4 after be connected to the positive pole of diode D11, the another one node between resistance R04 parallel with one another and electric capacity C08 is directly connected in the node between described self-driven winding coil L1 and L2 by wire.The size of described resistance R04 is 4700 ohm, and the size of described electric capacity C08 is 222 picofarads.
Wherein, the secondary output with the topological structure circuit of synchronous rectification of Dead Time of the application is respectively in series with an inductance coil.
The operation principle with the self-device synchronous rectification circuit of the Circuit Fault on Secondary Transformer of the main power circuit topological structure of Dead Time of the present utility model is: eliminate transformer primary control circuit part in the present embodiment, normally a kind of bridge circuit of this main control loop part, by controlling the switching tube of the triode that connects mutually, pass through control chip, when one of them switching tube is opened, another switching tube must be in off state, and vice versa.But, there is regular hour delay in the structure due to switching tube self, and simple analog circuit is also difficult to accurately control, the switching tube of mutual series connection can complete unlatching and turns off conversion by slitless connection, therefore need in middle control loop, the artificial handover time arranged between two switching tubes postpones, and described time delays is Dead Time, thus prevent error starting, cause the infringement of electrical appliance or circuit itself.When being provided with Dead Time in main control loop, owing to adopting transformer in secondary output control circuit, and there is certain self-excitation voltage in transformer itself, secondary circuit can not produce Dead Time time delay accurately along with main control loop, now triode Q3 and Q4 of secondary circuit itself is forced to the conducting participating in circuit, and this conducting deeply participated in causes triode Q3, and Q4 oneself power consumption increases, heating increases, and the process constantly repeated likely directly causes the damage of triode.
And in this application, synchronous rectification winding L 1, L2 provides driving square wave for synchronous rectification drives, resistance R05, its Main Function of uptake pathway that electric capacity C10 forms absorbs the peak voltage caused due to the leakage inductance of transformer, and to prevent metal-oxide-semiconductor Q3, the mistake of Q4 drives.When transformer master power switch pipe (or main control loop) becomes cut-off from conducting, main control loop enters Dead Time, the self-driven winding coil L1 of meanwhile controlled secondary, the voltage of L2 can not suddenly change, the Same Name of Ends of winding L 1 is still 10, the Same Name of Ends of winding 6-8 is 8, at this moment the high potential of Same Name of Ends 8, now because 6 of winding L 2 is low-voltage, metal-oxide-semiconductor Q3 can not conducting, electric current is through electric capacity C08, and the high frequency channel network that resistance R04 forms, through diode D4, provides high potential to make it continue to open to the G pole of metal-oxide-semiconductor Q4.The time T=Rc opened, in order to reduce the ON time of body diode, can achieve the goal, but this time can not be greater than Dead Time, that is: T by regulating the value of R04, C08
delaybe more than or equal to RC, equal both preferred.In like manner, when transformer master power switch pipe becomes conducting from cut-off, the operation principle of another unilateral bridge of rectification circuit is also the same, does not repeat them here.Namely when main limit control circuit is in Dead Time, for secondary loop builds a path, thus make secondary loop continue conducting, thus alleviate triode Q3, the infringement problem that the body diode conducting of Q4 causes.
Foregoing; be only preferred embodiment of the present utility model; not for limiting embodiment of the present utility model; those of ordinary skill in the art are according to central scope of the present utility model and spirit; can carry out corresponding flexible or amendment very easily, therefore protection range of the present utility model should be as the criterion with the protection range required by claims.
Claims (7)
1. have a self-device synchronous rectification circuit for Dead Time topological structure, it comprises the rectification circuit that is coupled to transformer secondary, it is characterized in that, described rectification circuit comprises: one for accelerating the self-driven winding L 1 of series connection and the L2 that turn off driving grid; Be coupled to the centre cap place of described self-driven winding L 1 and L2 and accelerate to turn off the high frequency channel circuit between gate driver circuit, described high frequency channel circuit comprises: a resistance R04, and being parallel to the electric capacity C08 at described resistance R04 two ends, described resistance R04 and electric capacity C08 forms RC network jointly; The unidirectional accelerating circuit of the described high frequency channel circuit signal of one control; One crest voltage absorbing circuit, described crest voltage absorbing circuit is coupled to self-driven winding two ends, and wherein, the opening time of described high frequency channel circuit is not more than the Dead Time of circuit.
2. there is the self-device synchronous rectification circuit of Dead Time topological structure as claimed in claim 1, it is characterized in that, described rectification circuit comprises and is applied to main power and opens up that to mend structure be the rectification circuit of Half bridge rectifier circuit, the secondary side of push-pull circuit or full-bridge circuit.
3. have the self-device synchronous rectification circuit of Dead Time topological structure as claimed in claim 1, it is characterized in that, described rectification circuit comprises: two self-driven winding L 1 of series connection and L2, the metal-oxide-semiconductor Q3 of synchronous rectification, Q4; Triode Q9, Q10, unidirectional accelerating diode D11, D12, D3, D4; Resistance R03 and R06; Wherein, one end of described self-driven winding L 1 is connected to the positive pole of described diode D12, and the negative pole of described diode D12 is connected to the G pole of described metal-oxide-semiconductor Q3 and the emitter of described triode Q9, and the D pole of metal-oxide-semiconductor Q3 is connected to one end of transformer secondary; One end of described self-driven winding L 2 is connected to the positive pole of described diode D11, and the negative pole of diode D11 is connected to the G pole of described metal-oxide-semiconductor Q4 and the emitter of triode Q10, and the D pole of metal-oxide-semiconductor Q4 is connected to other one end of transformer secondary; Be connected to self-driven winding coil L1, the node between L2 after the collector electrode of described triode Q9 with Q10 is directly connected, and the S of described metal-oxide-semiconductor Q3 with Q4 is also connected to self-driven winding coil L1 after being extremely directly connected, the node between L2; Be connected to the positive pole of diode D12 after the base series one resistance R06 of wherein said triode Q9, be connected to the positive pole of diode D11 after the base series one resistance R03 of described triode Q10, composition accelerates the gate driver circuit turned off.
4. there is the self-device synchronous rectification circuit of Dead Time topological structure as claimed in claim 3, it is characterized in that, described unidirectional accelerating circuit comprises and is connected to node between described resistance R05 and R06 and a diode D3 of node between resistance R04 and electric capacity C08, and is connected to node between described electric capacity C10 and resistance R03 and the diode D4 of node between resistance R04 and electric capacity C08.
5. there is the self-device synchronous rectification circuit of Dead Time topological structure as claimed in claim 3, it is characterized in that, described crest voltage absorbing circuit comprises resistance R05 and the electric capacity C10 of a series connection, and crest voltage absorbing circuit is connected across described self-driven winding coil L1 and L2 two ends.
6. have the self-device synchronous rectification circuit of Dead Time topological structure as claimed in claim 3, it is characterized in that, described triode Q9 and Q10 is PNP pipe, and described triode Q3 and Q4 is metal-oxide-semiconductor.
7. there is the self-device synchronous rectification circuit of Dead Time topological structure as claimed in claim 3, it is characterized in that the opening time of described high frequency channel circuit is RC.
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| CN201420578742.8U CN204156744U (en) | 2014-09-30 | 2014-09-30 | There is the self-device synchronous rectification circuit of Dead Time topological structure |
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| CN201420578742.8U CN204156744U (en) | 2014-09-30 | 2014-09-30 | There is the self-device synchronous rectification circuit of Dead Time topological structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104283443B (en) * | 2014-09-30 | 2017-11-10 | 深圳市瑞晶实业有限公司 | Self-device synchronous rectification circuit with dead time topological structure |
| CN110068724A (en) * | 2018-01-24 | 2019-07-30 | 株式会社索思未来 | Peak value valley value detection circuit, A/D converter and integrated circuit |
-
2014
- 2014-09-30 CN CN201420578742.8U patent/CN204156744U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104283443B (en) * | 2014-09-30 | 2017-11-10 | 深圳市瑞晶实业有限公司 | Self-device synchronous rectification circuit with dead time topological structure |
| CN110068724A (en) * | 2018-01-24 | 2019-07-30 | 株式会社索思未来 | Peak value valley value detection circuit, A/D converter and integrated circuit |
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Granted publication date: 20150211 Termination date: 20160930 |
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| CF01 | Termination of patent right due to non-payment of annual fee |