CN104283443B - Self-device synchronous rectification circuit with dead time topological structure - Google Patents
Self-device synchronous rectification circuit with dead time topological structure Download PDFInfo
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- CN104283443B CN104283443B CN201410525699.3A CN201410525699A CN104283443B CN 104283443 B CN104283443 B CN 104283443B CN 201410525699 A CN201410525699 A CN 201410525699A CN 104283443 B CN104283443 B CN 104283443B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/327—Means for protecting converters other than automatic disconnection against abnormal temperatures
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Abstract
A kind of self-device synchronous rectification circuit with dead time topological structure, it includes a rectification circuit for being coupled to transformer secondary, and rectification circuit includes a self-driven winding L1 and L2 of series connection for being used to accelerate shut-off driving grid；It is coupled at the tap of the self-driven winding L1 and L2 and accelerates the high frequency channel circuit between shut-off gate driving circuit；The unidirectional accelerating circuit of the one control high frequency channel circuit signal；One crest voltage absorbing circuit, wherein, the opening time of the high frequency channel circuit is not more than the dead time of circuit.The present invention in self-driven rectification circuit by adding a high frequency channel circuit and unidirectional acceleration path diode, improve the operating efficiency of Switching Power Supply, and in dead time, reduce the depth ON time of the body diode of metal-oxide-semiconductor, so as to reduce the temperature of metal-oxide-semiconductor, the service life of metal-oxide-semiconductor is improved, power work is more stable.
Description
Technical field
The present invention relates to high frequency switch power secondary side rectification circuit technical field, more particularly to one kind to open up with dead time
Flutter the self-device synchronous rectification circuit of structure.
Background technology
As energy-conserving and environment-protective theory is promoted in worldwide, energy-saving and emission-reduction are gradually rooted in the hearts of the people.On the one hand, it is necessary to energetically
Green new energy is developed, is on the other hand exactly the loss for reducing the existing energy, improves the utilization ratio of the energy.Such as high frequency
Switching Power Supply design field, the secondary synchronous rectification of power supply is widely used, such as circuit of reversed excitation, forward converter
Synchronous rectification etc..But for the circuit (such as half-bridge circuit, push-pull circuit, full-bridge circuit) with dead time topological structure
In, due to the presence of the dead time of main power circuit, the failure in dead time of the synchronous rectification of secondary, cause
The body diode of metal-oxide-semiconductor participates in rectification circuit, so that the efficiency of whole Switching Power Supply reduces a lot.As shown in Figure 1
, we eliminate the main side control circuit part of transformer by taking the circuit of synchronous rectification of half-bridge circuit as an example, in figure, when main side
During on or off, the switching tube Q8, Q3 of synchronous rectification also corresponding on or off, when main side turns on and/or turns off, it is
Avoid the switching tube that is serially connected while be switched on or off, because, the switching tube such as triode is needed when being turned on and off
Want the regular hour, i.e., can not the undelayed transition of milli, it is therefore desirable to which artificial entered a delays time to control, so as to avoid simultaneously
Unlatching causes short circuit, damages equipment or the situation of circuit.Dead time is now produced, at this moment Q8, Q3 body diode is completed
The work of rectification, the at this moment loss of body diode we can press formula to calculate：
Wherein, POUTFor power output, VOUTFor output voltage, VDThe forward voltage drop of body diode, fsFor switching frequency.
From the equations above it will be seen that the forward voltage drop of body diode, dead time tDelay, the switch frequency of power supply
We can use up maximum possibility reduction, but power output to rate, and this is determined by user to output voltage, and we can not select
Select.So if the power of output is bigger, the loss of the body diode of metal-oxide-semiconductor is also bigger, when the power of output arrives greatly necessarily
Degree, while output voltage Vout is low arrives certain degree, the loss of body diode also just increases, and its efficiency will decline, special
It is not the high power switching power supply for some low-voltage, high-currents, the circuit of synchronous rectification of this self-powered can not realize synchronization at all
The efficient purpose of rectification circuit.
The content of the invention
It is an object of the invention to provide a kind of self-device synchronous rectification circuit with dead time topological structure, it is used for
Solve the problems, such as that the high frequency switch power secondary synchronous rectification efficiency with dead time is low in the prior art.
To reach above-mentioned purpose, technical scheme proposed by the invention is：
A kind of self-device synchronous rectification circuit with dead time topological structure of the present invention, it includes one and is coupled to change
The rectification circuit of depressor secondary, wherein the rectification circuit includes：One is used to accelerate the series connection for driving grid of shut-off self-driven
Winding L1 and L2；It is coupled at the centre cap of the self-driven winding L1 and L2 and accelerates between the gate driving circuit turned off
High frequency channel circuit, described high frequency channel circuit include：One resistance R04, described resistance R04 both ends are parallel with an electric capacity
C08, described resistance R04 and electric capacity C08 collectively constitute RC network；The unidirectional acceleration of the one control high frequency channel circuit signal
Circuit；One crest voltage absorbing circuit, described crest voltage absorbing circuit are coupled to self-driven winding both ends, wherein, it is described
The opening time of high frequency channel circuit is not more than the dead time of circuit.
Wherein, it, which mainly meets the tendency of, opens up that to mend structure be Half bridge rectifier circuit in main power, and the two of push-pull circuit or full-bridge circuit
The rectification circuit of secondary side.
Wherein, described rectification circuit includes：Two self-driven winding L1 and L2, the metal-oxide-semiconductor Q3 of synchronous rectification of series connection,
Q4；Triode Q9, Q10, unidirectional accelerating diode D11, D12, D3, D4；Resistance R03 and R06；Wherein, the self-driven winding
L1 one end is connected to the positive pole of the diode D12, and the negative pole of the diode D12 is connected to the G of the metal-oxide-semiconductor Q3
Pole and the emitter stage of the triode Q9, metal-oxide-semiconductor Q3 D poles are connected to one end of transformer secondary；The self-driven winding L2
One end be connected to the positive pole of the diode D11, diode D11 negative pole is connected to the G poles and three of the metal-oxide-semiconductor Q4
Pole pipe Q10 emitter stage, metal-oxide-semiconductor Q4 D poles are connected to the other end of transformer secondary；Described triode Q9's and Q10
Colelctor electrode is directly connected to be connected to self-driven winding coil L1 afterwards, the node between L2, and the S of the metal-oxide-semiconductor Q3 and Q4
Pole is also connected to self-driven winding coil L1 after being directly connected to, the node between L2；Wherein described triode Q9 base series
Diode D12 positive pole is connected to after one resistance R06, is connected to after the resistance R03 of base series one of the triode Q10
Diode D11 positive pole, composition accelerate the gate driving circuit of shut-off.
Wherein, described unidirectional accelerating circuit include being connected between the resistance R05 and R06 node and resistance R04 and
A diode D3 of node between electric capacity C08, and be connected between the electric capacity C10 and resistance R03 node and resistance R04 and
The diode D4 of node between electric capacity C08.
Wherein, described crest voltage absorbing circuit includes the resistance R05 and electric capacity C10 of a series connection, and crest voltage absorbs
Circuit is connected across the self-driven winding coil L1 and L2 both ends.
Wherein, described triode Q9 and Q10 are PNP pipe, and described triode Q3 and Q4 are metal-oxide-semiconductor.
Wherein, the opening time for being described high frequency channel is RC.
Compared with prior art, a kind of self-device synchronous rectification circuit with dead time topological structure of the invention,
By adding a high frequency channel, one-way conduction accelerating diode D3, D4 circuit, self-powered in the self-driven winding in rectification circuit
The interference absorbing circuit of dynamic winding, so as to improve the operating efficiency of Switching Power Supply, and in dead time, reduce metal-oxide-semiconductor
The depth of body diode participates in conducting demand, reduces MOS temperature, Rdss of the MOS in conducting is reduced, so that also
The conduction loss of metal-oxide-semiconductor is reduced, so as to improve the service life of metal-oxide-semiconductor, power work is more stable.
Brief description of the drawings
Fig. 1 is a kind of Switching Power Supply rectifier circuit portion circuit diagram of existing self-device synchronous rectification circuit；
Fig. 2 is a kind of rectifying part electricity of self-device synchronous rectification circuit with dead time topological structure of the present invention
Lu Tu.
Embodiment
Below with reference to accompanying drawing, give the present invention further elaboration.
Referring to Fig. 2, the present invention has the self-device synchronous rectification circuit of dead time topological structure, it includes a bridging
In the self-driven winding L1 and L2 of transformer secondary；One rectification circuit, described circuit of synchronous rectification are connected across the transformer
The both ends of secondary, more specifically, described circuit of synchronous rectification are connected to the both ends of the tap of the self-driven winding L1 and L2；
One is used to continue the high frequency channel circuit turned on when circuit is in dead time, and described high frequency channel circuit is coupled to described
Rectification circuit, the high frequency channel circuit includes：One resistance R04, described resistance R04 both ends are parallel with an electric capacity C08, described
Resistance R04 and electric capacity C08 connected in parallel form a RC network；One crest voltage absorbing circuit, described crest voltage
Absorbing circuit is coupled to the self-driven winding both ends of the series connection, and the opening time of the high frequency channel circuit is no more than electricity
The dead time on road.Wherein, the self-driven winding coil L1 and L2 of described two series connection drives rectification by electromagnetic induction respectively
The unilateral bridge of circuit.
Further, it is half-bridge circuit that described rectification circuit, which is opened up for main power circuit and mends structure, push-pull circuit or
The rectification circuit of the secondary side of the high frequency switch power of full-bridge circuit.
Detailed, described rectification circuit includes：Two self-driven winding coil L1 and L2, triode Q9 of series connection,
Q10；Metal-oxide-semiconductor Q3, Q4；Diode D11, D12, D3, D4；Resistance R03 and R06；Wherein, described self-driven winding coil L1
One end is connected to the positive pole of the diode D12, the negative pole of the diode D12 be connected to the metal-oxide-semiconductor Q3 G poles and
The emitter stage of the triode Q9, the D poles of the metal-oxide-semiconductor Q3 are connected to one end of transformer secondary；The self-driven winding wire
Circle L2 one end is connected to the positive pole of the diode D11, and diode D11 negative pole is connected to the G poles of the metal-oxide-semiconductor Q4
With triode Q10 emitter stage, triode Q4 D poles are connected to the other end of transformer secondary；Described triode Q9 and
Q10 colelctor electrode is connected to the node between induction coil L1, L2, and the S poles of the metal-oxide-semiconductor Q3 and Q4 after being directly connected to
Also it is connected to self-driven winding coil L1 after being directly connected to, the node between L2；Wherein described triode Q9 base series one
Diode D12 positive pole is connected to after resistance R06, two are connected to after the resistance R03 of base series one of the triode Q10
Pole pipe D11 positive pole, accelerate unilateral diode D3, D4 be connected to high frequency RC paths and devices circuit it
In.Wherein, described triode Q9 and Q10 are PNP pipe, in the present embodiment, triode Q9 and Q10 model：2N2907.
Described its model of metal-oxide-semiconductor Q3 and Q4：IRFP460LC.The model of the diode D3 and D4：1N5819.
Wherein, described crest voltage absorbing circuit includes the resistance R05 and electric capacity C10 of a series connection, and crest voltage absorbs
Circuit is connected across the self-driven winding coil L1 and L2 both ends.
Wherein, it is connected to a diode of node between node and resistance R04 and electric capacity C08 between the resistance R05 and R06
D3, and it is connected to the diode D4 of node between node and resistance R04 and electric capacity C08 between the electric capacity C10 and resistance R03
Collectively constitute the unidirectional accelerating circuit of the control high frequency channel circuit signal.
In more detail, described high frequency channel circuitous resistance R04 and the node between electric capacity C08 connect one or two respectively
The positive pole of positive pole and another diode D4 that diode D12 is connected to after pole pipe D3 positive poles is connected to diode D11's afterwards
Positive pole, another node between resistance R04 and electric capacity C08 parallel with one another are directly connected in described self-driven by wire
Node between winding coil L1 and L2.Described resistance R04 size is 4700 ohm, and described electric capacity C08 size is
222 picofarads.
Wherein, the secondary output end of the topological structure circuit of synchronous rectification with dead time of the application is respectively in series with one
Inductance coil.
The self driven synchronous of the Circuit Fault on Secondary Transformer of the main power circuit topological structure with dead time of the present invention is whole
The operation principle of current circuit is：Transformer primary control circuit part is eliminated in the present embodiment, the main control loop part
Typically a kind of bridge circuit, the switching tube for the triode being serially connected by control one, by control chip, when one of them
When switching tube is opened, another switching tube necessarily be in off state, and vice versa.But because the structure of switching tube itself is deposited
Postpone in the regular hour, and simple analog circuit also is difficult to accurately control, and the switching tube being serially connected can be seamless right
Completion is connect to be switched on and off changing, it is therefore desirable in middle control loop, the handover time between the artificial switching tube of setting two
Delay, the time delayses are dead time, so as to prevent error starting, cause the infringement of electrical appliance or circuit in itself.Work as master
When dead time is provided with control loop, due to using transformer in secondary output control circuit, and transformer exists in itself
Certain self-excitation voltage, secondary circuit can not accurately produce dead time delay with main control loop, now secondary circuit
The triode Q3 and Q4 of itself are forced to participate in the conducting of circuit, and this conducting deeply participated in causes itself work(of triode Q3, Q4
Consumption increase, heating increase, and the process constantly repeated is possible to directly result in the damage of triode.
And in this application, synchronous rectification winding L1, L2 provide driving square wave, resistance R05, electric capacity for synchronous rectification driving
Its main function of the uptake pathway of C10 compositions is to absorb the peak voltage caused by the leakage inductance of transformer, to prevent metal-oxide-semiconductor
Q3, Q4 mistake driving.When transformer master power switch pipe (or main control loop) is changed into cut-off from conducting, main control loop is entered
Enter dead time, the self-driven winding coil L1 of at the same time controlled secondary, L2 voltage can not be mutated, winding L1 Same Name of Ends
Still it is 10, winding 6-8 Same Name of Ends is 8, at this moment the high potential of Same Name of Ends 8, and now 6 due to winding L2 are low-voltage, metal-oxide-semiconductor
Q3 can not be turned on, and electric current passes through electric capacity C08, and the high frequency channel network of resistance R04 compositions is through diode D4, the G poles to metal-oxide-semiconductor Q4
High potential is provided to continue to open.The time T=Rc of unlatching, in order to reduce the ON time of body diode, tune can be passed through
Save R04, C08 value achieves the goal, but this time can not be more than dead time, i.e.,：TDelayMore than or equal to RC, preferably
The two is equal.Similarly, when transformer master power switch pipe is changed into conducting from ending, the work of another unilateral bridge of rectification circuit
Principle is also the same, be will not be described here.I.e. when main side control circuit is in dead time, one is built for secondary loop
Path, so that secondary loop continues to turn on, problem is damaged caused by so as to mitigate the conducting of triode Q3, Q4 body diode.
The above, only presently preferred embodiments of the present invention, are not intended to limit embodiment of the present invention, and this area is general
Lead to central scope and spirit of the technical staff according to the present invention, can very easily carry out corresponding flexible or modification, therefore originally
The protection domain of invention should be defined by the protection domain required by claims.
Claims (6)
1. a kind of self-device synchronous rectification circuit with dead time topological structure, it includes one and is coupled to transformer secondary
Rectification circuit, it is characterised in that the rectification circuit includes：One is used to accelerate the self-driven winding L1 of series connection for turning off driving grid
And L2；It is coupled at the centre cap of the self-driven winding L1 and L2 and accelerates the high frequency channel between shut-off gate driving circuit
Circuit, described high frequency channel circuit include：One resistance R04, and it is parallel to the electric capacity C08 at described resistance R04 both ends, institute
The resistance R04 and electric capacity C08 stated collectively constitutes RC network；The unidirectional accelerating circuit of the one control high frequency channel circuit signal,
The unidirectional accelerating circuit includes diode D3 and diode D4, the positive pole of the diode D3 and diode D4 are connected to high frequency
The output end of path circuitry, negative pole are coupled to rectification circuit；One crest voltage absorbing circuit, described crest voltage absorb electricity
Road is coupled to self-driven winding both ends, wherein, the opening time of the high frequency channel circuit is not more than the dead time of circuit.
2. there is the self-device synchronous rectification circuit of dead time topological structure as claimed in claim 1, it is characterised in that institute
Stating rectification circuit includes being applied to main power to open up benefit structure being Half bridge rectifier circuit, the secondary side of push-pull circuit or full-bridge circuit
Rectification circuit.
3. there is the self-device synchronous rectification circuit of dead time topological structure as claimed in claim 1, it is characterised in that institute
The rectification circuit stated includes：The two self-driven winding L1 and L2, the metal-oxide-semiconductor Q3, Q4 of synchronous rectification of series connection；Triode Q9,
Q10, unidirectional accelerating diode D11, D12, D3, D4；Resistance R03 and R06；Wherein, one end connection of the self-driven winding L1
In the positive pole of the diode D12, the negative pole of the diode D12 is connected to the G poles of the metal-oxide-semiconductor Q3 and three pole
Pipe Q9 emitter stage, metal-oxide-semiconductor Q3 D poles are connected to one end of transformer secondary；One end of the self-driven winding L2 is connected to
The positive pole of the diode D11, diode D11 negative pole are connected to the G poles of the metal-oxide-semiconductor Q4 and triode Q10 hair
Emitter-base bandgap grading, metal-oxide-semiconductor Q4 D poles are connected to the other end of transformer secondary；Described triode Q9 and Q10 colelctor electrode directly connects
Be connected to unidirectional accelerating diode D3 and D4 positive pole after connecing, and the S poles of the metal-oxide-semiconductor Q3 and Q4 be directly connected to after connect
In triode Q9 and Q10 colelctor electrode；Diode is connected to after the wherein described triode Q9 resistance R06 of base series one
D12 positive pole, the resistance R03 of base series one of the triode Q10 are connected to diode D11 positive pole afterwards, and composition accelerates
The gate driving circuit of shut-off.
4. there is the self-device synchronous rectification circuit of dead time topological structure as claimed in claim 3, it is characterised in that institute
The crest voltage absorbing circuit stated includes the resistance R05 and electric capacity C10 of a series connection, crest voltage absorbing circuit be connected across it is described from
Drive winding coil L1 and L2 both ends.
5. there is the self-device synchronous rectification circuit of dead time topological structure as claimed in claim 3, it is characterised in that institute
The triode Q9 and Q10 stated is PNP pipe, and described triode Q3 and Q4 are metal-oxide-semiconductor.
6. there is the self-device synchronous rectification circuit of dead time topological structure as claimed in claim 3, it is characterised in that institute
The opening time for the high frequency channel circuit stated is RC.
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| CN201410525699.3A CN104283443B (en) | 2014-09-30 | 2014-09-30 | Self-device synchronous rectification circuit with dead time topological structure |
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| CN104283443B true CN104283443B (en) | 2017-11-10 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105450055A (en) * | 2015-11-20 | 2016-03-30 | 芜湖锐芯电子科技有限公司 | Current-type synchronous rectification circuit |
| US10230311B2 (en) | 2017-03-15 | 2019-03-12 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Method and apparatus of dead time tuning in an inverter |
| CN107005152B (en) * | 2017-03-15 | 2019-08-23 | 香港应用科技研究院有限公司 | Method and apparatus for tuning dead time in inverter |
| CN109698613B (en) * | 2017-10-19 | 2021-11-05 | 浙江大学 | Self-driving circuit and full-bridge synchronous rectification driving circuit |
| CN107959423A (en) * | 2017-12-07 | 2018-04-24 | 深圳市华星光电技术有限公司 | Circuit of reversed excitation and flyback sourse |
| WO2020151020A1 (en) * | 2019-01-23 | 2020-07-30 | Hong Kong Applied Science and Technology Research Institute Company Limited | Method and apparatus of dead time tuning in an inverter |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1926753A (en) * | 2004-04-26 | 2007-03-07 | 艾斯泰克国际有限公司 | DC-DC converter with coupled-inductors current-doubler |
| CN204156744U (en) * | 2014-09-30 | 2015-02-11 | 深圳市南华东方科技有限公司 | There is the self-device synchronous rectification circuit of Dead Time topological structure |
-
2014
- 2014-09-30 CN CN201410525699.3A patent/CN104283443B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1926753A (en) * | 2004-04-26 | 2007-03-07 | 艾斯泰克国际有限公司 | DC-DC converter with coupled-inductors current-doubler |
| CN204156744U (en) * | 2014-09-30 | 2015-02-11 | 深圳市南华东方科技有限公司 | There is the self-device synchronous rectification circuit of Dead Time topological structure |
Non-Patent Citations (2)
| Title |
|---|
| 低压大电流DC/DC变换器拓扑分析;庞永强等;《电力电子技术》;20020831;第36卷(第4期);全文 * |
| 隔离式低压大电流输出DC /DC变换器拓扑分析;樊建辉等;《通信电源技术》;20060125;第23卷(第1期);全文 * |
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