CN204155927U - The test structure of ion implantation doping diffusion - Google Patents
The test structure of ion implantation doping diffusion Download PDFInfo
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- CN204155927U CN204155927U CN201420611124.9U CN201420611124U CN204155927U CN 204155927 U CN204155927 U CN 204155927U CN 201420611124 U CN201420611124 U CN 201420611124U CN 204155927 U CN204155927 U CN 204155927U
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- grid
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Abstract
The utility model proposes the test structure of a kind of ion implantation doping diffusion, be made up of multiple test cell, test cell comprises: substrate, be formed at intrabasement fleet plough groove isolation structure, be formed at suprabasil first ion implanted region and the second ion implanted region, core is formed on the first ion implanted region and surrounds the first grid of core with marginal portion, and the live width of core is greater than the live width of first grid ion implanted region, be positioned at the second grid on the second ion implanted region, the core of first grid is different with the doping type of marginal portion.To marginal portion and the second grid two ends applying test voltage of first grid, thus the diffusion of the core of first grid doping type different from marginal portion can be judged by monitoring current, and then whether the performance of monitoring devices drifts about.
Description
Technical field
The utility model relates to field of semiconductor manufacture, particularly relates to the test structure of a kind of ion implantation doping diffusion.
Background technology
In order to increase the integrated level of semiconductor device; usual meeting forms PMOS transistor and nmos pass transistor in CMOS transistor; both adopt same grid formation process; grid unlike pair pmos transistor carries out the ion implantation doping of P type, and the grid of pair nmos transistor carries out N-type ion implantation doping.
Concrete, please refer to Fig. 1, the forming process of described CMOS transistor comprises: first, there is provided a substrate, described substrate comprises PMOS transistor district 10, nmos pass transistor district 11, forms N trap in PMOS transistor district 10, P trap is formed in nmos pass transistor district 11, wherein, gate dielectric layer 21 is formed in PMOS transistor district 10 and nmos pass transistor district 11 respectively, and described PMOS transistor district 10 and nmos pass transistor district 11 are kept apart by fleet plough groove isolation structure 20; Then, form grid 30, and the grid 30 be positioned on the fleet plough groove isolation structure 20 in PMOS transistor district 10 and gate dielectric layer 21 is carried out to the doping of P type ion implantation, the grid 30 be positioned on the fleet plough groove isolation structure 20 in nmos pass transistor district 11 and gate dielectric layer 21 is carried out to the doping of N-type ion implantation, after doping completes, form a doped interface between PMOS transistor and nmos pass transistor; Then adopt high annealing to carry out doping to activate.
But, doping activation can cause the ion generation diffusion being entrained in PMOS transistor district 10 and nmos pass transistor district 11 to interpenetrate, thus cause the distance L1 of doped interface distance PMOS transistor district 10 raceway groove become large or diminish, the distance L2 of doped interface distance nmos pass transistor 11 raceway groove diminishes or becomes large in other words conj.or perhaps, thus causes the device performance formed to drift about.
Visible, the degree that monitoring ion implantation occurs to spread in grid is very important to the performance of monitoring devices, but the test structure of the degree spread does not occur in grid for monitoring ion implantation in prior art.Therefore, art technology people is badly in need of proposing a kind of test structure, can monitor the degree that ion implantation occurs to spread in grid.
Utility model content
The purpose of this utility model is the test structure providing a kind of ion implantation doping to spread, and can monitor the degree that ion implantation doping is spread in grid, and then whether the performance of monitoring devices drifts about.
To achieve these goals, the utility model proposes the test structure of a kind of ion implantation doping diffusion, be made up of multiple test cell, described test cell comprises: substrate, fleet plough groove isolation structure, first ion implanted region, second ion implanted region, first grid and multiple second grid, wherein, described fleet plough groove isolation structure, first ion implanted region and the second ion implanted region are all formed in described substrate, described first ion implanted region and the second ion implanted region are kept apart by described fleet plough groove isolation structure, described first grid comprises core and surrounds the marginal portion of described core, described core is formed on described first ion implanted region, and the live width of described core is greater than the live width of described first grid ion implanted region, described marginal portion is formed on described fleet plough groove isolation structure, described second grid is positioned on described second ion implanted region, the doping type of the core of described first ion implanted region and first grid is identical, described second ion implanted region, substrate, the doping type of the marginal portion of second grid and first grid is identical, the core of described first grid is different with the doping type of marginal portion.
Optionally, described test cell also comprises multiple through hole line, and described through hole line is formed at the marginal portion of described first grid and the surface of second grid respectively.
Optionally, described test cell also comprises multiple self-aligned silicide, described self-aligned silicide is formed at the marginal portion of described first grid and the surface of second grid, and described through hole line is connected by the marginal portion of described self-aligned silicide and described first grid and second grid.
Optionally, the number scope of described test cell is 50 ~ 1000.
Optionally, the live width of described core changes according to the rule of predetermined step-length.
Optionally, described substrate is N-type substrate, and the test structure of described ion implantation doping diffusion is PMOS transistor.
Optionally, described substrate is the substrate of P type, and the test structure of described ion implantation doping diffusion is nmos pass transistor.
Optionally, described test cell is square.
Compared with prior art, the beneficial effects of the utility model are mainly reflected in: the first ion implanted region is formed with first grid, the core of first grid and marginal portion are adulterated different, second ion implanted region is formed with second grid, second grid, substrate, second ion implanted region is identical with the marginal portion doping of first grid, the core of first grid is identical with the doping of the first ion implanted region, to marginal portion and the second grid two ends applying test voltage of first grid, thus the diffusion of the core of first grid doping type different from marginal portion can be judged by monitoring current, and then whether the performance of monitoring devices drifts about.
Accompanying drawing explanation
Fig. 1 is the generalized section of CMOS transistor device in prior art;
Fig. 2 is the generalized section of the test structure of the utility model one embodiment intermediate ion dopant implant diffusion;
Fig. 3 is the vertical view of the test structure of the utility model one embodiment intermediate ion dopant implant diffusion.
Embodiment
Below in conjunction with schematic diagram, the test structure that ion implantation doping of the present utility model is spread is described in more detail, which show preferred embodiment of the present utility model, should be appreciated that those skilled in the art can revise the utility model described here, and still realize advantageous effects of the present utility model.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as to restriction of the present utility model.
In order to clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the utility model chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, a large amount of implementation detail must be made to realize the specific objective of developer, such as, according to regarding system or the restriction about business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, more specifically the utility model is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantage of the present utility model and feature will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, aid illustration the utility model embodiment lucidly.
Please refer to Fig. 2 and Fig. 3, in the present embodiment, propose the test structure of a kind of ion implantation doping diffusion, be made up of multiple square test cell, described test cell comprises: substrate 100, fleet plough groove isolation structure 200, first ion implanted region 310, second ion implanted region 320, first grid 410 and multiple second grid 420, wherein, described fleet plough groove isolation structure 200, first ion implanted region 310 and the second ion implanted region 320 are formed in described substrate 100, first ion implanted region 310 and the second ion implanted region 320 are kept apart by described fleet plough groove isolation structure 200, described first grid 410 comprises core 411 and marginal portion 412, described marginal portion 412 surrounds described core 411 (as shown in Figure 3), described core 411 is formed on described first ion implanted region 310, and the live width of described core 411 is greater than the live width of described first grid ion implanted region 310, described marginal portion 412 is formed on described fleet plough groove isolation structure 200, described second grid 420 is positioned on described second ion implanted region 320, the doping type of the core 411 of described first ion implanted region 310 and first grid is identical, described second ion implanted region 320, substrate 100, the doping type of the marginal portion 412 of second grid 420 and first grid is identical, the core 411 of described first grid is different with the doping type of marginal portion 412.
In the present embodiment, described test cell also comprises multiple through hole line 600 and multiple self-aligned silicide 500, and described through hole line 600 is formed at the marginal portion 412 of described first grid 410 and the surface of second grid 420 respectively.Described self-aligned silicide 500 is formed at the marginal portion 412 of described first grid and the surface of second grid 420, and described through hole line 600 is connected by the marginal portion 412 of described self-aligned silicide 500 and described first grid and second grid 420.Wherein, described self-aligned silicide 500 can effectively reduce contact resistance, and increase the sensitiveness of test, described through hole line 600 is tested for follow-up applying test voltage.
Concrete, the live width of described self-aligned silicide 500, first ion implanted region 310 and the second ion implanted region 320 is more than or equal to the minimum dimension of design rule.In order to better description, the live width setting the first ion implanted region 310 is La, core 411 side of first grid is Lb to the minimum range of the first ion implanted region, Lb is also for doped interface is to the distance of raceway groove, self-aligned silicide 500 is Lc to the minimum range of doped interface, and the live width of self-aligned silicide 500 is Ld.When carrying out dissimilar ion implantation respectively to the core 411 of first grid and marginal portion 412, the doped interface formed should to be kept at a distance Lb with raceway groove, and after carrying out annealing activation technology, ion can spread, and causes doped interface to offset, if ion diffuse amplitude is larger, doped interface is caused to be offset to raceway groove place, namely Lb is minimum, and when being even 0, then device performance just corresponding skew can occur.
For convenience of description, setting substrate 100 doping type at this is N-type, so, the doping type of the marginal portion 412 of the second ion implanted region 320, second grid 420 and first grid is N-type, the core 411 of first grid and the doping type of the first ion implantation 310 are P type, i.e. the test structure of ion implantation doping diffusion is PMOS transistor device.
When testing, apply a high voltage (V at marginal portion 412 place of first grid by described through hole line 600
high), the through hole line 600 gone out at second grid 420 applies low-voltage (V
low), if the ion diffuse degree in first grid is less than Lb, so can there is the back biased diode of a reverse biased junction, cause not having leakage current to occur between first grid and second grid 420, that is there is not serious drift in device performance.If the ion diffuse degree in first grid is greater than Lb, even reach raceway groove place (i.e. the first ion implanted region 310), so just there is not reverse biased junction in substrate 100, direct conducting, will occur larger leakage current between first grid and second grid 420.
The core 411 that the marginal portion 412 of first grid surrounds first grid is the skews in order to monitor doped interface more accurately, no matter the skew of doped interface whichaway, all can be monitored by the test structure that the present embodiment proposes.Owing to forming self-aligned silicide 500 to reduce contact resistance, improve the sensitiveness of test, but self-aligned silicide 500 be too near to raceway groove place then self-aligned silicide 500 can there is leakage current, become interference, be unfavorable for analyze doped interface whether just really offset.Therefore, in order to avoid above-mentioned situation, then usually guarantee that the live width of self-aligned silicide is the distance of live width to described first ion implanted region 310 that Ld is less than self-aligned silicide 500, namely Ld is less than Lb and Lc sum.
In order to increase the sensitiveness of test, and monitor out process window, usually the test structure of multiple ion implantation doping diffusion can be formed, monitor simultaneously, test cell number in the test structure of an ion implantation doping diffusion is 50 ~ 1000, it is such as 100, concrete unit number can adjust according to the sensitivity of tester table, in addition, in order to monitor out process window, usually the live width of the core 411 of first grid can be changed, its rule according to predetermined step-length is changed, namely the size of Lb is changed, the distance at doped interface and raceway groove place is changed according to certain rule, such as doped interface is 0.5 μm to the distance Lb of raceway groove under normal circumstances, in order to monitor process window, the distance of multiple doped interface to raceway groove can be set, can be such as 0.3 μm, 0.35 μm, 0.4 μm etc.
Hereinbefore, substrate 100 is set as N-type substrate in order to aspect introduction, device is PMOS transistor, but, the test structure of the ion implantation doping diffusion that the present embodiment proposes is not limited to PMOS transistor, it can also be nmos pass transistor, namely the doping of P type is carried out to substrate 100, the doping type of the marginal portion 412 of the second ion implanted region 320, second grid 420 and first grid is P type, and the core 411 of first grid and the doping type of the first ion implantation 310 are N-type.It is to be noted, when testing P type substrate 100, needing to apply low-voltage to the marginal portion 412 (for P type) of first grid, high voltage is applied to second grid 420, thus reverse biased junction can be formed with in substrate 100, be conducive to the monitoring carrying out leakage current.
To sum up, in the test structure of the ion implantation doping diffusion provided in the utility model embodiment, first ion implanted region is formed with first grid, the core of first grid and marginal portion are adulterated different, second ion implanted region is formed with second grid, second grid, substrate, second ion implanted region is identical with the marginal portion doping of first grid, the core of first grid is identical with the doping of the first ion implanted region, to marginal portion and the second grid two ends applying test voltage of first grid, thus the diffusion of the core of first grid doping type different from marginal portion can be judged by monitoring current, and then whether the performance of monitoring devices drifts about.
Above are only preferred embodiment of the present utility model, any restriction is not played to the utility model.Any person of ordinary skill in the field; not departing from the scope of the technical solution of the utility model; the technical scheme disclose the utility model and technology contents make the variations such as any type of equivalent replacement or amendment; all belong to the content not departing from the technical solution of the utility model, still belong within protection range of the present utility model.
Claims (8)
1. the test structure of an ion implantation doping diffusion, it is characterized in that, be made up of multiple test cell, described test cell comprises: substrate, fleet plough groove isolation structure, first ion implanted region, second ion implanted region, first grid and multiple second grid, wherein, described fleet plough groove isolation structure, first ion implanted region and the second ion implanted region are all formed in described substrate, described first ion implanted region and the second ion implanted region are kept apart by described fleet plough groove isolation structure, described first grid comprises core and surrounds the marginal portion of described core, described core is formed on described first ion implanted region, and the live width of described core is greater than the live width of described first grid ion implanted region, described marginal portion is formed on described fleet plough groove isolation structure, described second grid is positioned on described second ion implanted region, the doping type of the core of described first ion implanted region and first grid is identical, described second ion implanted region, substrate, the doping type of the marginal portion of second grid and first grid is identical, the core of described first grid is different with the doping type of marginal portion.
2. the test structure of ion implantation doping diffusion as claimed in claim 1, it is characterized in that, described test cell also comprises multiple through hole line, and described through hole line is formed at the marginal portion of described first grid and the surface of second grid respectively.
3. the test structure of ion implantation doping diffusion as claimed in claim 2, it is characterized in that, described test cell also comprises multiple self-aligned silicide, described self-aligned silicide is formed at the marginal portion of described first grid and the surface of second grid, and described through hole line is connected by the marginal portion of described self-aligned silicide and described first grid and second grid.
4. the test structure of ion implantation doping diffusion as claimed in claim 1, it is characterized in that, the number scope of described test cell is 50 ~ 1000.
5. the test structure of ion implantation doping diffusion as claimed in claim 4, it is characterized in that, the live width of described core changes according to the rule of predetermined step-length.
6. the test structure of ion implantation doping diffusion as claimed in claim 1, it is characterized in that, described substrate is N-type substrate, and the test structure of described ion implantation doping diffusion is PMOS transistor.
7. the test structure of ion implantation doping diffusion as claimed in claim 6, it is characterized in that, described substrate is the substrate of P type, and the test structure of described ion implantation doping diffusion is nmos pass transistor.
8. the test structure of ion implantation doping diffusion as claimed in claim 1, it is characterized in that, described test cell is square.
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| CN201420611124.9U CN204155927U (en) | 2014-10-21 | 2014-10-21 | The test structure of ion implantation doping diffusion |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112490216A (en) * | 2020-11-27 | 2021-03-12 | 上海华力微电子有限公司 | WAT test structure and method for characterizing PN junction depletion region |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112490216A (en) * | 2020-11-27 | 2021-03-12 | 上海华力微电子有限公司 | WAT test structure and method for characterizing PN junction depletion region |
| CN112490216B (en) * | 2020-11-27 | 2023-09-19 | 上海华力微电子有限公司 | WAT test structure and method for characterizing PN junction depletion region |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150211 Termination date: 20191021 |
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| CF01 | Termination of patent right due to non-payment of annual fee |