CN203950129U - Atomic gas chamber device based on MEMS technology - Google Patents
Atomic gas chamber device based on MEMS technology Download PDFInfo
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- CN203950129U CN203950129U CN201420171385.3U CN201420171385U CN203950129U CN 203950129 U CN203950129 U CN 203950129U CN 201420171385 U CN201420171385 U CN 201420171385U CN 203950129 U CN203950129 U CN 203950129U
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- Prior art keywords
- hole
- atomic gas
- gas chamber
- silicon chip
- silicon
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- 238000005516 engineering process Methods 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 239000011521 glass Substances 0.000 claims abstract description 33
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 238000005260 corrosion Methods 0.000 claims description 8
- 230000007797 corrosion Effects 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 230000001427 coherent effect Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 6
- 230000003993 interaction Effects 0.000 abstract description 4
- 238000013461 design Methods 0.000 abstract description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 2
- 238000001039 wet etching Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 150000001340 alkali metals Chemical group 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000000347 anisotropic wet etching Methods 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Abstract
The utility model relates to a kind of atomic gas chamber device and manufacture method thereof based on MEMS technology.Described atomic gas chamber device has typical sandwich structure, by one deck, has the silicon chip of through hole and cavity body structure that layer glass sheet bonding surrounds forms.The xsect of described through hole is parallelogram, is formed { the 111} crystal face that the sidewall of through hole is silicon chip by the monocrystalline silicon piece of (100) type by anisotropic silicon wet etching.Layer glass sheet with the silicon chip of through hole, form atomic gas chamber after by silicon-glass anodic bonding.Atomic gas described in the utility model chamber device can be used in the systems such as atomic clock and magnetometer, by changing atom cavity size design, be easy to increase the distance between two catoptrons in chamber, thereby increase the interaction space length between laser and atomic gas, the signal to noise ratio (S/N ratio) of coherent layout imprison effect signal is strengthened, be conducive to improve the degree of stability of system.
Description
Technical field
The utility model belongs to microelectromechanical systems (MEMS) element manufacturing and encapsulation technology field, and atomic physics device technology field, is specifically related to a kind of miniature atomic cavity configuration and manufacture method thereof based on MEMS technique.
Background technology
The degree of accuracy of atomic clock Measuring Time can reach part per billion second even higher, atomic clock is the most artificial clock at present, its correlative study has great importance.CPT(Coherent Population Trapping, coherent layout imprison effect) atomic clock is to utilize double-colored coherent light and atom effect that atom is prepared into coherent state, the atomic frequency source that utilizes CPT signal to realize as microwave frequency discrimination signal.Owing to having the features such as the microminiaturization of being easy to, low-power consumption and high frequency stability, CPT atomic clock is just subject to the attention of various countries research institution once proposition, and has carried out deep research.
CPT atomic clock is a complicated system, and its core component is exactly atomic gas chamber.Utilize now ripe MEMS fabrication techniques miniature atomic gas cavity, passive-type CPT atomic clock size can be narrowed down to chip-scale.Chip-scale CPT atomic clock can significantly reduce atomic clock volume and power consumption, realizes powered battery, and can be in batches, low-cost production, in military, civilian every field, there is great market, therefore become the important development direction of atomic clock.
At present, the atomic gas cavity configuration of the chip-scale CPT atomic clock sandwich structure that normally centre is glass for silicon chip both sides.First on monocrystalline silicon piece, make through hole, then form half cavity configuration with Pyrex glass sheet bonding, after alkaline metal and buffer gas are filled with, then with other a slice Pyrex glass sheet bonding formation hermetically-sealed construction.In the chamber of the alkali metal atom air chamber structure of this structure, light and atom effect optical path length are subject to the restriction of silicon wafer thickness and silicon process technology, be generally 1mm～2mm, further increase thickness difficulty and expensive, therefore light and atomic interaction light path have been limited, the signal to noise ratio (S/N ratio) of CPT signal is lower, has affected the frequency stability of CPT atomic clock.
Utility model content
On existing Research foundation, in order further to improve the light path of light and atomic interaction, increase CPT Signal-to-Noise, increase frequency stability, the utility model provides a kind of atomic gas chamber device and manufacture method thereof based on MEMS technology.
Atomic gas chamber device based on MEMS technology has typical sandwich structure, comprise that middle layer is the silicon chip that middle part has through hole, one side of silicon chip is provided with top layer glass, another side is provided with bottom glass, the xsect of described through hole is parallelogram, and the two side of the through hole of parallelogram is parallel inclined-plane; On the sidewall on inclined-plane, described through hole both sides, be respectively equipped with catoptron.
The sidewall on inclined-plane, described through hole both sides is formed by the anisotropic wet corrosion of silicon, the sidewall of through hole is silicon chip 111} crystal face, and with the angle of top layer glass or bottom glass be 54.7 degree.
The concrete manufacturing operation step of atomic gas chamber device based on MEMS technology is as follows:
1). make through hole
The silicon chip of (100) type of selection, carries out dual surface lithography and forms corrosion window, utilizes silicon dioxide to carry out two-sided anisotropic wet corrosion as mask layer, the through hole that formation xsect is parallelogram;
2). make catoptron
Adopt evaporation or sputtering technology, utilize hard mask or lift-off technology, on the sidewall of the both sides of described through hole, make respectively metal film catoptron;
3). silicon on glass bonding
First carry out silicon on glass bonding one time, complete with the silicon chip of through hole and the bonding of bottom glass; Then pass into vapour of an alkali metal and buffer gas; Carry out again silicon on glass bonding one time, make top layer glass and wafer bonding, complete the sealing in atomic gas chamber;
4). scribing
The through hole of take on silicon chip is unit, and whole silicon chip is divided, and forms 100 above single atomic gas chamber devices.
Described in step 3), vapour of an alkali metal is rubidium steam or caesium steam, the mixed gas of the nitrogen that described buffer gas is 85%, 10% hydrogen and 5% carbon dioxide.
Useful technique effect of the present utility model embodies in the following areas:
1. atomic gas of the present utility model chamber device makes to act between laser and alkali metal atom light path and is determined by the transverse width of the through hole on silicon chip, therefore can be not limited to silicon wafer thickness, by changing atom cavity size design, be easy to increase the distance between two catoptrons in chamber, thereby increase the interaction space length between laser and atomic gas, the signal to noise ratio (S/N ratio) of coherent layout imprison effect signal is strengthened, be conducive to improve the degree of stability of system;
2. the main ripe MEMS technique such as the anisotropic wet etching process based on silicon and silicon-glass anodic bonding of the manufacturing technology of atomic gas of the present utility model chamber device, so cost is low, is easy to realize;
3. the feature based on MEMS batch machining, in the flow of same batch, can complete the manufacture in the atomic gas chamber of different through hole width.
Accompanying drawing explanation
Fig. 1 is the cross-sectional figure of the utility model structure.
Fig. 2 is the critical size marked graph of the utility model atomic gas chamber device.
Fig. 3 is the light path schematic diagram of laser in the device of the utility model atomic gas chamber.
Fig. 4 is the light path schematic diagram of laser in the device of traditional atomic gas chamber.
Sequence number in upper figure: the thickness that silicon chip 1, atomic gas chamber 2, top layer glass 3, bottom glass 4, metal film catoptron 5, H are silicon chip, the transverse width that W is window, L is the horizontal range of positive and negative two windows, α is the angle of through hole and glass sheet.
Embodiment
Below in conjunction with accompanying drawing, by embodiment, the utility model is further described.
embodiment 1
Referring to Fig. 1 and Fig. 2, the atomic gas chamber device based on MEMS technology has typical sandwich structure, comprises that middle layer is the silicon chip 1 that middle part has through hole, and the xsect of through hole is parallelogram.One side of silicon chip 1 is provided with top layer glass 3, and another side is provided with bottom glass 4.The two side of the through hole of parallelogram is parallel inclined-plane; On the sidewall on inclined-plane, through hole both sides, be respectively equipped with metal film catoptron 5.The sidewall on inclined-plane, through hole both sides is formed by the anisotropic wet corrosion of silicon, the sidewall of through hole is silicon chip 111} crystal face, and with the angle of top layer glass 3 or bottom glass 4 be 54.7 degree.
Referring to Fig. 3, the light path of laser in 2 devices of atomic gas chamber mainly determined by the transverse width W of window, by regulating the size of the transverse width W of window can change light path.Referring to Fig. 4, and in traditional atomic gas chamber 2, laser is directly injected from top, and bottom is penetrated, and light path is determined by the thickness H of silicon chip 1.
The concrete preparation manipulation step of the atomic gas chamber device based on MEMS technology is as follows:
1. choose the N(100 that thickness is 0.5mm) silicon chip 1 of type, utilize silicon dioxide to make mask, by potassium hydroxide anisotropic wet etching process, undertaken two-sided to wearing corrosion, on silicon chip 1, forming xsect is 200 through holes of parallelogram, the both sides sidewall of each through hole be 111} crystal face, the transverse width of each through hole is 3mm;
2. adopt evaporation technology, utilize lift-off technology, on the both sides sidewall of each through hole of silicon chip 1, make respectively metal film catoptron 5;
3. first carry out silicon-glass anodic bonding for the first time, complete the bonding of silicon chip 1 and bottom glass 4; Be filled with the nitrogen, 10% hydrogen of rubidium steam and 85% and the buffer gas that 5% carbon dioxide mix forms simultaneously, finally carry out anode linkage for the second time, make top layer glass 3 and silicon chip 1 bonding, complete the sealing of atomic gas cavity.Anode linkage process conditions are: 400 ℃ of temperature, voltage 600V;
4. scribing, the through hole of take on silicon chip 1 is unit, and whole silicon chip 1 is divided, and forms 200 single atomic gas chamber devices.
embodiment 2:
The structure of the atomic gas chamber device based on MEMS technology is with embodiment 1.
Concrete preparation manipulation step is as follows:
1. choose the P(100 that thickness is 1mm) silicon chip 1 of type, utilize silicon nitride to make mask, by TMAH anisotropic wet etching process, undertaken two-sided to wearing corrosion, on silicon chip, forming xsect is 150 through holes of parallelogram, the both sides sidewall of each through hole is that { 111} crystal face, the transverse width of through hole is 5mm.The temperature of TMAH corrosion is 80 ℃;
2. adopt sputtering technology, utilize hard mask technique, on the sidewall of the both sides of each through hole, make respectively metal film catoptron 5;
3. first carry out silicon-glass anodic bonding for the first time, complete the bonding of silicon chip 1 and bottom glass 4; Be filled with the nitrogen, 10% hydrogen of caesium steam and 85% and the buffer gas that 5% carbon dioxide mix forms simultaneously, finally carry out anode linkage for the second time, make top layer glass 3 and silicon chip 1 bonding, complete the sealing of atomic gas cavity.Anode linkage process conditions are: 400 ℃ of temperature, voltage 600V;
4. scribing, the through hole of take on silicon chip 1 is unit, and whole silicon chip is divided, and forms 150 single atomic gas chamber devices.
Claims (2)
1. the atomic gas chamber device based on MEMS technology, described atomic gas chamber device has typical sandwich structure, comprise that middle layer is the silicon chip that middle part has through hole, one side of silicon chip is provided with top layer glass, another side is provided with bottom glass, it is characterized in that: the xsect of described through hole is parallelogram, the two side of the through hole of parallelogram is parallel inclined-plane; On the sidewall on inclined-plane, described through hole both sides, be respectively equipped with catoptron.
2. the atomic gas chamber device based on MEMS technology according to claim 1, it is characterized in that: the sidewall on inclined-plane, described through hole both sides is formed by the anisotropic wet corrosion of silicon, the sidewall of through hole be silicon chip 111} crystal face, and with the angle of top layer glass or bottom glass be 54.7 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420171385.3U CN203950129U (en) | 2014-04-10 | 2014-04-10 | Atomic gas chamber device based on MEMS technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420171385.3U CN203950129U (en) | 2014-04-10 | 2014-04-10 | Atomic gas chamber device based on MEMS technology |
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| Publication Number | Publication Date |
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| CN203950129U true CN203950129U (en) | 2014-11-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420171385.3U Expired - Lifetime CN203950129U (en) | 2014-04-10 | 2014-04-10 | Atomic gas chamber device based on MEMS technology |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103941576A (en) * | 2014-04-10 | 2014-07-23 | 中国电子科技集团公司第三十八研究所 | Atom gas cavity device based on MEMS technology and manufacturing method thereof |
| CN104891431A (en) * | 2015-04-25 | 2015-09-09 | 中国电子科技集团公司第四十九研究所 | Production method of miniature alkali metal atom chamber unit |
| CN105712282A (en) * | 2016-03-14 | 2016-06-29 | 成都天奥电子股份有限公司 | MEMS (micro-electromechanical systems) atom air chamber applicable to orthogonal optical pumping and detection and preparing method of MEMS (micro-electromechanical systems) atom air chamber |
-
2014
- 2014-04-10 CN CN201420171385.3U patent/CN203950129U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103941576A (en) * | 2014-04-10 | 2014-07-23 | 中国电子科技集团公司第三十八研究所 | Atom gas cavity device based on MEMS technology and manufacturing method thereof |
| CN104891431A (en) * | 2015-04-25 | 2015-09-09 | 中国电子科技集团公司第四十九研究所 | Production method of miniature alkali metal atom chamber unit |
| CN105712282A (en) * | 2016-03-14 | 2016-06-29 | 成都天奥电子股份有限公司 | MEMS (micro-electromechanical systems) atom air chamber applicable to orthogonal optical pumping and detection and preparing method of MEMS (micro-electromechanical systems) atom air chamber |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141119 |