CN203941234U - A kind of solar power silicon sheet resistivity current vortex proving installation - Google Patents
A kind of solar power silicon sheet resistivity current vortex proving installation Download PDFInfo
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- CN203941234U CN203941234U CN201420275914.4U CN201420275914U CN203941234U CN 203941234 U CN203941234 U CN 203941234U CN 201420275914 U CN201420275914 U CN 201420275914U CN 203941234 U CN203941234 U CN 203941234U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The utility model relates to a kind of solar power silicon sheet resistivity current vortex proving installation, comprises current vortex driver f1, and excitation solar silicon wafers also forms eddy current on solar silicon wafers surface; Current vortex sensor, inductive loop generates current signal and voltage signal; Current signal and voltage signal pass through signal picker, difference frequency device, intermediate frequency amplifier, detection and low pass circuit, direct current amplifier processing successively, finally obtain the analog quantity of electric current and voltage.The eddy current forming on the utility model current vortex sensor induction silicon chip generates current signal and voltage signal, then amplify through transmission, difference frequency, intermediate frequency amplification, detection and low pass, direct current successively, the analog quantity that finally obtains voltage and current calculates the resistivity of solar silicon wafers.The utility model is compared to prior art, and framework is clear, circuit structure is simple, system adjustment, relate to instrument, instrument less, convenient and swift, has advantages of that working stability, reproducible, long service life and cost are low.
Description
Technical field
The utility model belongs to solar silicon wafers field tests, relates in particular to a kind of solar power silicon sheet resistivity current vortex proving installation.
Background technology
The resistivity of solar silicon wafers is one of important indicator of passing judgment on solar silicon wafers conductive capability, and for preventing that specification is irregular too large, test solar power silicon sheet resistivity is that solar silicon wafers is processed into the important detection operation before solar battery sheet.
In prior art, solar power silicon sheet resistivity electric eddy current measurement device has adopted comparatively complicated finished product instrument, the instrument combine such as the phase-locked amplification of high frequency frequency conversion, low frequency, low-frequency band pass filter, so that has that equipment link is many, volume large, compensation, coordinates to control that complexity, self-correcting, compensation length consuming time affect test speed, the shortcoming such as involve great expense.
Therefore, need a kind of simple and quick solar power silicon sheet resistivity current vortex proving installation badly.
Utility model content
The purpose of this utility model is to overcome the defect that prior art exists, and a kind of solar power silicon sheet resistivity current vortex proving installation is provided.
The technical scheme that realizes the utility model object is: a kind of solar power silicon sheet resistivity current vortex proving installation, be applicable to the non-contact testing of monocrystalline and/or polycrystalline solar silicon chip, and comprising:
Current vortex driver f1, is arranged at solar silicon wafers surface and is provided with interval, for encouraging solar silicon wafers and forming eddy current on solar silicon wafers surface;
Current vortex sensor, is arranged at solar silicon wafers surface, generates current signal and voltage signal for responding to described eddy current;
Signal picker, is connected with the output terminal of described current vortex sensor, for gathering current signal and the voltage signal of current vortex sensor output;
High-frequency agitation source f2;
Difference frequency device, described difference frequency device is connected with output terminal, the high-frequency agitation source f2 of described signal picker respectively, for obtaining voltage of intermediate frequency signal, electric current of intermediate frequency signal after the voltage signal collecting, current signal and high-frequency agitation source f2 difference frequency;
Intermediate frequency amplifier, is connected with the output terminal of described difference frequency device, for voltage of intermediate frequency signal, electric current of intermediate frequency signal are amplified;
Detection and low pass circuit, be connected with the output terminal of described intermediate frequency amplifier, for voltage of intermediate frequency signal, electric current of intermediate frequency signal after amplifying are carried out to filtering AC compounent;
Direct current amplifier, is connected with the output terminal of described detection and low pass circuit, for voltage of intermediate frequency signal, electric current of intermediate frequency signal after filtering are amplified;
Analog to digital converter, is connected with the output terminal of described direct current amplifier, for voltage of intermediate frequency signal, electric current of intermediate frequency signal are converted to the analog quantity of voltage and the analog quantity of voltage.
Further, described current vortex sensor is the resonant tank of coil and Capacitance parallel connection.
Further, described signal picker comprises high-frequency transformer and resistance, and described high-frequency transformer gathers the voltage signal that eddy current generates, and noninductive resistance gathers the current signal that eddy current generates.
Further, described current vortex driver f1 generated frequency is 2.725Mhz～2.775Mhz, the high_frequency sine wave signal that amplitude is 1.5Vp-p ± 2mV.
Further, be also provided with auto amplitude control device, the output terminal of described auto amplitude control device is connected with the input end of described current vortex driver f1.
Further, described high-frequency agitation source f2 generated frequency is greater than the high_frequency sine wave signal of f1465Khz.
Further, be also provided with f2 amplitude controller, the output terminal of described f2 amplitude controller is connected with the input end of described high-frequency agitation source f2.
The utlity model has positive effect: the utility model is based on current vortex driver f1 excitation silicon chip, the eddy current forming on current vortex sensor induction silicon chip generates current signal and voltage signal, then amplify through transmission, difference frequency, intermediate frequency amplification, detection and low pass, direct current successively, the analog quantity that finally obtains voltage and current calculates the resistivity of solar silicon wafers.The utility model is compared to prior art, and framework is clear, circuit structure is simple, system adjustment, relate to instrument, instrument less, convenient and swift, has advantages of that working stability, reproducible, long service life and cost are low.
Brief description of the drawings
For content of the present utility model is more easily expressly understood, according to specific embodiment also by reference to the accompanying drawings, the utility model is described in further detail below, wherein:
Fig. 1 is structured flowchart of the present utility model.
Embodiment
As shown in Figure 1, as the first preferred implementation, present embodiment provides a kind of solar power silicon sheet resistivity current vortex proving installation, is applicable to the non-contact testing of monocrystalline and/or polycrystalline solar silicon chip, comprising:
Current vortex driver f1, is arranged at solar silicon wafers surface and is provided with interval, for encouraging solar silicon wafers and forming eddy current on solar silicon wafers surface;
Current vortex sensor, is arranged at solar silicon wafers surface, generates current signal and voltage signal for inductive loop;
Signal picker, is connected with the output terminal of current vortex sensor, comprises high-frequency transformer and resistance, and high-frequency transformer gathers the voltage signal that eddy current generates, and noninductive resistance gathers the current signal that eddy current generates;
High-frequency agitation source f2;
Difference frequency device, comprise the first difference frequency device and the second difference frequency device, be connected with output terminal, the high-frequency agitation source f2 of signal picker respectively, for obtaining voltage of intermediate frequency signal, electric current of intermediate frequency signal after the voltage signal collecting, current signal and high-frequency agitation source f2 difference frequency;
Intermediate frequency amplifier, comprises the first intermediate frequency amplifier and the second intermediate frequency amplifier, is connected respectively, for voltage of intermediate frequency signal, electric current of intermediate frequency signal are amplified with the output terminal of difference frequency device;
Detection and low pass circuit, comprise the first detection and low pass circuit and the second detection and low pass circuit, is connected respectively, for voltage of intermediate frequency signal, electric current of intermediate frequency signal after amplifying are carried out to filtering AC compounent with the output terminal of intermediate frequency amplifier;
Direct current amplifier, comprises the first direct current amplifier and the second direct current amplifier, is connected respectively, for voltage of intermediate frequency signal, electric current of intermediate frequency signal after filtering are amplified with the output terminal of detection and low pass circuit;
Analog to digital converter, is connected with the output terminal of direct current amplifier, for voltage of intermediate frequency signal, electric current of intermediate frequency signal are converted to the analog quantity of voltage and the analog quantity of voltage.
Present embodiment is based on current vortex driver f1 excitation silicon chip, the eddy current forming on current vortex sensor induction silicon chip generates current signal and voltage signal, then amplify through transmission, difference frequency, intermediate frequency amplification, detection and low pass, direct current successively, the analog quantity that finally obtains voltage and current calculates the resistivity of solar silicon wafers.Present embodiment is compared to prior art, and framework is clear, circuit structure is simple, system adjustment, relate to instrument, instrument less, convenient and swift, has advantages of that working stability, reproducible, long service life and cost are low.
The current vortex sensor that present embodiment provides is the resonant tank of coil and Capacitance parallel connection; Current vortex driver f1 generated frequency is 2.725Mhz～2.775Mhz, the high_frequency sine wave signal that amplitude is 1.5Vp-p ± 2mV, and current vortex driver f1 is by the control of f1 auto amplitude control device; High-frequency agitation source f2 generated frequency is greater than the high_frequency sine wave signal of f1465Khz, and high-frequency agitation source f2 is by the control of f2 amplitude controller.
Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any amendment of making, be equal to replacement, improvement etc., within all should being included in protection domain of the present utility model.
Claims (7)
1. a solar power silicon sheet resistivity current vortex proving installation, is applicable to the non-contact testing of monocrystalline and/or polycrystalline solar silicon chip, it is characterized in that, comprising:
Current vortex driver f1, is arranged at solar silicon wafers surface and is provided with interval, for encouraging solar silicon wafers and forming eddy current on solar silicon wafers surface;
Current vortex sensor, is arranged at solar silicon wafers surface, generates current signal and voltage signal for responding to described eddy current;
Signal picker, is connected with the output terminal of described current vortex sensor, for gathering current signal and the voltage signal of current vortex sensor output;
High-frequency agitation source f2;
Difference frequency device, described difference frequency device is connected with output terminal, the high-frequency agitation source f2 of described signal picker respectively, for obtaining voltage of intermediate frequency signal, electric current of intermediate frequency signal after the voltage signal collecting, current signal and high-frequency agitation source f2 difference frequency;
Intermediate frequency amplifier, is connected with the output terminal of described difference frequency device, for voltage of intermediate frequency signal, electric current of intermediate frequency signal are amplified;
Detection and low pass circuit, be connected with the output terminal of described intermediate frequency amplifier, for voltage of intermediate frequency signal, electric current of intermediate frequency signal after amplifying are carried out to filtering AC compounent;
Direct current amplifier, is connected with the output terminal of described detection and low pass circuit, for voltage of intermediate frequency signal, electric current of intermediate frequency signal after filtering are amplified;
Analog to digital converter, is connected with the output terminal of described direct current amplifier, for voltage of intermediate frequency signal, electric current of intermediate frequency signal are converted to the analog quantity of voltage and the analog quantity of voltage.
2. solar power silicon sheet resistivity current vortex proving installation according to claim 1, is characterized in that, described current vortex sensor is the resonant tank of coil and Capacitance parallel connection.
3. solar power silicon sheet resistivity current vortex proving installation according to claim 1, it is characterized in that, described signal picker comprises high-frequency transformer and resistance, and described high-frequency transformer gathers the voltage signal that eddy current generates, and noninductive resistance gathers the current signal that eddy current generates.
4. solar power silicon sheet resistivity current vortex proving installation according to claim 1, is characterized in that, described current vortex driver f1 generated frequency is 2.725Mhz～2.775Mhz, the high_frequency sine wave signal that amplitude is 1.5Vp-p ± 2mV.
5. solar power silicon sheet resistivity current vortex proving installation according to claim 1, is characterized in that, is also provided with auto amplitude control device, and the output terminal of described auto amplitude control device is connected with the input end of described current vortex driver f1.
6. solar power silicon sheet resistivity current vortex proving installation according to claim 1, is characterized in that, described high-frequency agitation source f2 generated frequency is greater than the high_frequency sine wave signal of f1465Khz.
7. solar power silicon sheet resistivity current vortex proving installation according to claim 1, is characterized in that, be also provided with f2 amplitude controller, the output terminal of described f2 amplitude controller is connected with the input end of described high-frequency agitation source f2.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420275914.4U CN203941234U (en) | 2014-05-27 | 2014-05-27 | A kind of solar power silicon sheet resistivity current vortex proving installation |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420275914.4U CN203941234U (en) | 2014-05-27 | 2014-05-27 | A kind of solar power silicon sheet resistivity current vortex proving installation |
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| CN203941234U true CN203941234U (en) | 2014-11-12 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104753462A (en) * | 2015-04-15 | 2015-07-01 | 阿特斯(中国)投资有限公司 | Fault detection method for photovoltaic components |
| CN106841810A (en) * | 2016-12-30 | 2017-06-13 | 易瓦特科技股份公司 | Insulator detector |
| CN110168388A (en) * | 2017-02-20 | 2019-08-23 | 新电元工业株式会社 | Electronic device and connector |
-
2014
- 2014-05-27 CN CN201420275914.4U patent/CN203941234U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104753462A (en) * | 2015-04-15 | 2015-07-01 | 阿特斯(中国)投资有限公司 | Fault detection method for photovoltaic components |
| CN106841810A (en) * | 2016-12-30 | 2017-06-13 | 易瓦特科技股份公司 | Insulator detector |
| CN110168388A (en) * | 2017-02-20 | 2019-08-23 | 新电元工业株式会社 | Electronic device and connector |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141112 Termination date: 20190527 |
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| CF01 | Termination of patent right due to non-payment of annual fee |