CN203930077U - Containing the H+ ion cross section signal acquiring system that mixes ion beam current - Google Patents
Containing the H+ ion cross section signal acquiring system that mixes ion beam current Download PDFInfo
- Publication number
- CN203930077U CN203930077U CN201420212147.2U CN201420212147U CN203930077U CN 203930077 U CN203930077 U CN 203930077U CN 201420212147 U CN201420212147 U CN 201420212147U CN 203930077 U CN203930077 U CN 203930077U
- Authority
- CN
- China
- Prior art keywords
- ion
- scintillator
- fixed body
- ion gun
- beam current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 238000009432 framing Methods 0.000 claims abstract description 15
- 230000003287 optical effect Effects 0.000 claims abstract description 12
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 5
- 230000005684 electric field Effects 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 abstract description 7
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 238000003745 diagnosis Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000004088 simulation Methods 0.000 abstract description 2
- 150000002500 ions Chemical class 0.000 description 38
- 238000009826 distribution Methods 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000002123 temporal effect Effects 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000001455 metallic ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Measurement Of Radiation (AREA)
Abstract
Containing the H that mixes ion beam current
+ion cross section signal acquiring system, relates to high-energy physics technology, and the utility model comprises: the ion gun arranging in turn along light path and scintillator, optical lens, framing camera; Ion gun and scintillator are arranged in vacuum chamber, and ion gun is fixedly installed on ion gun fixed body, and scintillator is fixedly installed on target fixed body, and ion gun fixed body and target fixed body have electric energy interface; Described scintillator is provided with metal film near an ionogenic side surface.The beneficial effects of the utility model are to possess the H that impurity heavy ion composition is filtered and time-space is differentiated simultaneously
+beam cross section diagnosis capability, the danger that can effectively reduce insulation breakdown under high pressure real simulation near target surface environment of electric field.
Description
Technical field
The utility model relates to high-energy physics technology, particularly charged particle accelerator beam diagnostics field.
Background technology
Ion section gauge is one of most important beam diagnostics content in charged particle accelerator.The ion beam that accelerates to draw from hydrogen-storage electrode Vacuum Arc discharge ion source is a kind of containing the mixed ion beam current of H+, wherein also contains a large amount of foreign ion compositions such as multiple charge state metallic ion.For H+ ion and the interactional research of target, need the beam cross section of real-time diagnosis H+ ion to distribute, the interference of shielding foreign ion.
Scintillator, is divided into inorganic scintillator and organic scintillator, is a kind of conventional ion detection method.
Utility model content
Technical problem to be solved in the utility model is that a kind of signal acquiring system that can directly measure the beam cross section of the intrafascicular H+ composition of hybrid ionic is provided.
The technical scheme that the utility model solve the technical problem employing is that the H+ ion cross section signal acquiring system containing mixing ion beam current, is characterized in that, comprising:
The ion gun arranging in turn along light path and scintillator, optical lens, framing camera; Ion gun and scintillator are arranged in vacuum chamber, and ion gun is fixedly installed on ion gun fixed body, and scintillator is fixedly installed on target fixed body, and ion gun fixed body and target fixed body have electric energy interface; Described scintillator is provided with metal film near an ionogenic side surface.
Optical lens is arranged at the chamber wall of vacuum chamber, and framing camera is arranged at beyond vacuum chamber.Ion gun and scintillator, optical lens, framing camera are along linear light path setting, and scintillator is perpendicular to linear light path, and described optical lens is convex lens.Scintillator is inorganic scintillator, and die-away time is between 30ns-300ns; Scintillator thickness is 0.5~3mm, and diameter is within the scope of 10mm-40mm.
Metal film is the metal coating that is plated on scintillator surface, is electrically connected to target urceolus.
Described metal film material is Ti or Al.Described ion gun fixed body is ion gun urceolus, and described target fixed body is the first set collar, the second set collar of target urceolus and Qi Nei.
Adopt the signal acquisition method containing mixing the H+ ion cross section signal acquiring system of ion beam current of the present utility model to comprise the steps:
1) under vacuum environment, the hybrid ionic in ion gun is drawn with high-voltage electric field and is accelerated, and bombardment, to the scintillator with metal film, produces fluorescence;
2) framing camera receives fluorescence, forms picture signal.
Described scintillator thickness is greater than the calculating penetration depth of H+ ion.Described framing camera has signal transmission interface.
The beneficial effects of the utility model are to possess the H that impurity heavy ion composition is filtered and time-space is differentiated simultaneously
+beam cross section diagnosis capability, the danger that can effectively reduce insulation breakdown under high pressure real simulation near target surface environment of electric field.
Accompanying drawing explanation
Fig. 1 is system architecture schematic diagram of the present utility model.
Wherein, 1 is vacuum chamber, and 2 is ion gun, 3 is ion gun urceolus, and 4 is accelerating gap, and 5 is hybrid ionic accelerated hybrid ionic line forming in accelerating gap of drawing from ion gun 2,6 is target urceolus, 7 is metal film, and 8 is scintillator, and 9 is optical lens, 10 fluorescence that send in scintillator for ion deposition, 11 is framing camera, and 12 is the cable between framing camera and computing machine, and 13 is data acquisition computer.
Fig. 2 is the structural representation of plated film scintillator.Wherein 7 is metal film, and 8 is scintillator, and 23 is foreign ion bundle, and 24 is H
+ion beam, 25 is the first set collar, and 26 is the second set collar, and 25 and 26 is for the fixing metal parts of scintillator.D1 is coating film thickness, and d2 is scintillator thickness.
Embodiment
It is a kind of containing H that the utility model provides
+the intrafascicular H of hybrid ionic
+measuring method and the system of composition area of beam spatial and temporal distributions, can directly measure the intrafascicular H of hybrid ionic
+the beam cross section of composition, thus beam optics designed more accurately, research H
+line is to the derogatory behaviour of metallic target and secondary feature.
Measuring system of the present utility model, by plated film scintillator and fixed part thereof, optical lens, framing camera, can also comprise the computing machine that is connected to framing camera.Hybrid ionic line is drawn, is accelerated and bombarded metallic target under highfield from Vacuum Arc plasma, for generation of secondary or metal material surface damage research.
The method that scintillator-photoelectricity gathers, is highly suitable for diagnosing the beam cross section distribution diagnosis under high electric field environment and target noble potential situation.Because the deposition degree of depth of different ions in scintillator is different, under identical accelerating potential, draw mass of ion lighter, its penetration depth is larger.In scintillator surface, plate certain thickness metal film, foreign ion is deposited in metal film to H
+see through metal film deposition and in scintillator, inspire fluorescence, the spatial and temporal distributions of fluorescence intensity has reflected H
+the strength characteristic of line.The time-space of measuring plated film scintillator fluorescence intensity by framing camera distributes, and obtains containing H
+the intrafascicular pure H of hybrid ionic
+composition area of beam spatial and temporal distributions information, the strong measurement result of combination stream, for studying H
+line is to the derogatory behaviour of metallic target and secondary feature.
Because scintillator is generally insulator or semiconductor, under line bombardment and strong electric field environment, can produce charge accumulation and secondary, cause high-voltage breakdown.Scintillator surface plates certain thickness homogeneous conductive metallic diaphragm, can effectively reduce the surface resistance of scintillator, avoids charge accumulation and secondary, effectively reduces the danger of insulation breakdown under high pressure.The current potential of conductive metal film has been determined electric border simultaneously, avoids the existence of scintillator to affect near target Electric Field Distribution.
Scintillator Coating Materials selects plasticity larger, and the high metal or alloy of scintillator bond strength, requires the coefficient of thermal expansion of Coating Materials close with the coefficient of thermal expansion of scintillator.The concrete thickness of plated film is for different particle energys and foreign ion kind and difference, and it is principle that coating film thickness design meets impurity screening ion, film adhesion performance the best and resistance minimum.
Scintillator film plating layer is realized and being electrically connected to by metal reinforcement member with target urceolus, between film plating layer and metal reinforcement member for annular coordinates to reduce contact resistance.
Referring to Fig. 1.Between ion gun urceolus 3 and target urceolus 6, there is high-voltage electrostatic field, the hybrid ionic that ion gun 2 produces bombards to the scintillator 8 with metal film 7 after being drawn, accelerate under electric field action, produce fluorescence 10, fluorescence is received by framing camera 11 through optical lens 9 and amplifies, through signal-transmitting cable 12, by computing machine 13, gathered.
Referring to Fig. 2.Foreign ion 23 is deposited in metal film 7, according to numerical evaluation, can obtain the maximum penetration of given energy foreign ion in different metal film, and thickness of metal film d1 should be a bit larger tham this penetration depth.The H that kinetic energy is suitable
+ion will deposit in scintillator 8 and produce fluorescence through metal film, and scintillator thickness d 2 is greater than H
+the calculating penetration depth of ion in scintillator.Meeting under the condition of mechanical property, the thickness of d2 should not be too thick, and that avoids that light scattering causes in scintillator is fuzzy, and actual to adopt scintillator thickness be 0.5mm-3mm, but be not limited to this scope.
Scintillator is selected inorganic scintillator, and the damping time constant of scintillator should meet time-resolved requirement, the ion beam that is 1us-10us for pulse width, and be chosen within the scope of 30ns-300ns the die-away time of scintillator.
Scintillator Coating Materials adopts plasticity larger, and the high metal of scintillator bond strength, as metals such as Ti, Al, but is not limited to the two.For the ion accelerating voltage of 100kV-150kV, coating film thickness is within the scope of 50nm-1000nm, and to other accelerating potential values, coating film thickness is not limited to above-mentioned scope.Meeting above-mentioned condition, do not affecting under the condition of ionoluminescence intensity, coating film thickness need meet the principle of film adhesion performance the best and resistance minimum simultaneously.
Claims (7)
1. containing the H that mixes ion beam current
+ion cross section signal acquiring system, is characterized in that, comprising:
The ion gun arranging in turn along light path (2) and scintillator (8), optical lens (9), framing camera (11); Ion gun (2) and scintillator (8) are arranged in vacuum chamber (1), and ion gun (2) is fixedly installed on ion gun fixed body, and scintillator is fixedly installed on target fixed body, and ion gun fixed body and target fixed body have electric energy interface; Described scintillator (8) is provided with metal film (7) near a side surface of ion gun (2).
2. the H containing mixing ion beam current as claimed in claim 1
+ion cross section signal acquiring system, is characterized in that, optical lens (9) is arranged at the chamber wall of vacuum chamber (1), and framing camera (11) is arranged at vacuum chamber (1) in addition.
3. the H containing mixing ion beam current as claimed in claim 1
+ion cross section signal acquiring system, it is characterized in that, ion gun (2) and scintillator (8), optical lens (9), framing camera (11) are along linear light path setting, and scintillator (8) is perpendicular to linear light path, and described optical lens is convex lens.
4. the H containing mixing ion beam current as claimed in claim 1
+ion cross section signal acquiring system, is characterized in that, scintillator is inorganic scintillator, and die-away time is between 30ns-300ns; Scintillator thickness is 0.5~3mm, and diameter is within the scope of 10mm-40mm.
5. the H containing mixing ion beam current as claimed in claim 1
+ion cross section signal acquiring system, is characterized in that, metal film (7), for being plated on the metal coating of scintillator surface, is electrically connected to target urceolus (6).
6. the H containing mixing ion beam current as claimed in claim 1
+ion cross section signal acquiring system, is characterized in that, described metal film material is Ti or Al.
7. the H containing mixing ion beam current as claimed in claim 1
+ion cross section signal acquiring system, is characterized in that, described ion gun fixed body is ion gun urceolus (3), and described target fixed body is target urceolus (6) and the first set collar (25), the second set collar (26) in it.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420212147.2U CN203930077U (en) | 2014-04-28 | 2014-04-28 | Containing the H+ ion cross section signal acquiring system that mixes ion beam current |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420212147.2U CN203930077U (en) | 2014-04-28 | 2014-04-28 | Containing the H+ ion cross section signal acquiring system that mixes ion beam current |
Publications (1)
Publication Number | Publication Date |
---|---|
CN203930077U true CN203930077U (en) | 2014-11-05 |
Family
ID=51825874
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201420212147.2U Expired - Fee Related CN203930077U (en) | 2014-04-28 | 2014-04-28 | Containing the H+ ion cross section signal acquiring system that mixes ion beam current |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN203930077U (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104979152A (en) * | 2015-07-28 | 2015-10-14 | 中国科学技术大学 | Ion implantation equipment |
CN107607042A (en) * | 2017-11-07 | 2018-01-19 | 合肥中科离子医学技术装备有限公司 | A kind of transmission device for being used to measure line lateral parameter |
CN111337970A (en) * | 2018-12-18 | 2020-06-26 | 核工业西南物理研究院 | An energy analyzer for measuring particle composition of ion beam based on energy particle penetration characteristics |
-
2014
- 2014-04-28 CN CN201420212147.2U patent/CN203930077U/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104979152A (en) * | 2015-07-28 | 2015-10-14 | 中国科学技术大学 | Ion implantation equipment |
CN107607042A (en) * | 2017-11-07 | 2018-01-19 | 合肥中科离子医学技术装备有限公司 | A kind of transmission device for being used to measure line lateral parameter |
CN111337970A (en) * | 2018-12-18 | 2020-06-26 | 核工业西南物理研究院 | An energy analyzer for measuring particle composition of ion beam based on energy particle penetration characteristics |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8598525B2 (en) | Particle beam system | |
Thydén et al. | Microstructural characterization of SOFC Ni–YSZ anode composites by low-voltage scanning electron microscopy | |
CN203930077U (en) | Containing the H+ ion cross section signal acquiring system that mixes ion beam current | |
Shimizu et al. | Experimental verification of deposition rate increase, with maintained high ionized flux fraction, by shortening the HiPIMS pulse | |
CN104422478B (en) | Method for measuring parameters of transient plasmas in high-speed impact | |
CN102947478B (en) | There is the arc evaporation source of clear and definite electric field | |
EP1998207A3 (en) | Charged particle instrument equipped with optical microscope | |
CN108627866A (en) | A kind of beam energy analyzer | |
CN110780335B (en) | A two-dimensional distribution monitoring device of intense charged particle beam | |
CN103984002A (en) | System and method for collecting section signal of H+ ions containing mixed ion currents | |
CN106770411B (en) | A secondary electronic measuring device | |
CN102288628A (en) | Device with intelligent measurement and control technology for testing secondary electronic emission coefficients of solid material | |
Pilan et al. | Evidences of accumulation points in cascade regenerative phenomena observed in high voltage dc devices insulated by long vacuum gaps | |
JP2014235948A (en) | Ion source and ion milling device | |
Yao et al. | Suppression of electron cloud using copper thermal spray coating in SuperKEKB | |
Disatnik et al. | Characteristics of macroparticle emission from a high-current-density multi-cathode spot vacuum arc | |
CN102135628B (en) | Diagnostic probe and diagnostic method for electron beam plasmas in atmospheric environment | |
US20140374594A1 (en) | Detector and Charged Particle Beam Instrument | |
CN112731507A (en) | Neutron and gamma ray combined detection device | |
CN209656790U (en) | An Electronic Offset Electric Field Strength Sensor | |
CN105158617A (en) | Charge-discharge simulator based on electron induction | |
Patino et al. | Application of Auger spectroscopy for measurement of secondary electron emission from conducting material for electric propulsion devices | |
CN202066808U (en) | Intelligent testing device for secondary electron emission coefficient of solid material | |
CN105259194A (en) | Measuring method for modulation period and uniformity of multiple layers of films | |
CN205133729U (en) | Device in control target magnetic field |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141105 Termination date: 20180428 |