CN203910826U - Infrared ray sensor - Google Patents
Infrared ray sensor Download PDFInfo
- Publication number
- CN203910826U CN203910826U CN201420227520.1U CN201420227520U CN203910826U CN 203910826 U CN203910826 U CN 203910826U CN 201420227520 U CN201420227520 U CN 201420227520U CN 203910826 U CN203910826 U CN 203910826U
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- CN
- China
- Prior art keywords
- lens
- infrared ray
- ray sensor
- pin diode
- electrically connected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000000919 ceramic Substances 0.000 claims abstract description 31
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- 239000004411 aluminium Substances 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 5
- 230000035945 sensitivity Effects 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract 2
- 230000003321 amplification Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The utility model relates to an infrared ray sensor, and solves the problem of low sensitivity of conventional infrared sensors. The infrared ray sensor provided by the utility model has higher sensitivity. The infrared ray sensor comprises a lens and a PIN diode arranged under the lens. The PIN diode is disposed in a metal casing, and arranged on an aluminium substrate. The upper cover of the casing is provided with a window, and the lens is arranged in the window of the upper cover. The PIN diode is electrically connected with an FET. A pyroelectric ceramic is arranged on the upper cover, and is covered by an optical filter. The upper cover is provided with a hole, and a lead passes through the hole. An electrode of the pyroelectric ceramic is electrically connected with the aluminium substrate, and is electrically connected with the FET. According to the utility model, the function of picking up infrared signals is enhanced, and the sensitivity is improved, so that the sensor has richer functionality in acquisition.
Description
Technical field
The utility model relates to a kind of infrared ray sensor, for receiving infrared-ray.
Background technology
Existing infrared receiver transducer includes the element such as infrared ray adopter, pre-amplification circuit FET pipe being arranged on aluminium base, and they are sealed in the shell as metallic shield.On the upper surface of its housing, have window, be provided with lens or transparent logical light body at window place.Extraneous infrared ray enters in shell by window, is caught and changes into the signal of telecommunication by PIN diode, after processing, passes to A/D change-over circuit via the amplification of FET pipe.For example Chinese Patent Application No. is that CN200920216915.0, publication date are the patent application in June 16 in 2010, and it discloses a kind of infrared light based on PIN-FET technology and has accepted assembly.Its disclosed structure is common a kind of infrared sensor structure.
The infrared ray sensor of said structure, the ratio of the total area of the shared upper surface of window area of its upper surface of outer cover is very low, causes its sensitivity on the low side.In order to improve sensitivity, if expand the area of window, reduce the area of upper surface, can cause the shielding action of metallic shield to weaken.So the scheme of at present more feasible increase sensitivity is the luminous sensitivity of improving the performance of collector lens and improving PIN diode itself.
Utility model content
In order to overcome the deficiencies in the prior art, technical problem to be solved in the utility model is to provide a kind of infrared ray sensor, and by the sensitivity problem on the low side that solves existing infrared sensor, this infrared ray sensor has higher sensitivity.
For addressing the above problem, the technical scheme that the utility model adopts is as follows:
A kind of infrared ray sensor, comprises lens and the PIN diode that is positioned at lens below, and PIN diode is positioned at the shell of metal, and be located on aluminium base, the upper watchcase of shell is provided with window, and lens are located on the window of watchcase, and PIN diode and FET pipe are electrically connected; Described upper watchcase is provided with pyroelectric ceramics, is coated with optical filter on pyroelectric ceramics; Described upper watchcase is provided with hole, and a wire column, through described hole, is electrically connected the electrode of pyroelectric ceramics and described aluminium base, and is electrically connected with FET pipe.
It should be noted that, PIN diode and pyroelectric ceramics can be shared a FET pipe, also can separate and respectively establish a FET pipe.
Preferably: the outer ledge at described pyroelectric ceramics and described optical filter is provided with silica gel ring.Silica gel ring wraps in the outward flange of pyroelectric ceramics, and it can protect pyroelectric ceramics, for example can be moistureproof and crashproof.
Preferably: described shell comprises cavity, in cavity, be filled with packaging plastic.Packaging plastic is generally epoxy resin, can be also transparent silica gel.
Preferably: the lower edge of described lens is placed on described upper watchcase.This structure makes the lower end of lens have upper watchcase to support, and the location of lens can be more accurate.If do not encapsulated in the cavity in shell, in this structure, lens are by closed window and then play the effect of closed cavity.
The beneficial effects of the utility model are:
Compared to existing technology, the utility model utilizes the upper watchcase area of shell, is provided with pyroelectric ceramics thereon.Pyroelectric ceramics can cover on the whole upper watchcase except lens.This mode has increased picking up of infrared signal, has increased the sensitivity of induction.Compare PIN diode, the price of pyroelectric ceramics can be lower.Therefore the utility model has been realized the sensitivity that has increased infrared sensor by a kind of mode cheaply.Because the utility model is the input of double source infrared information, be two infrared pickup device induction infrared rays of PIN diode and pyroelectric ceramics, therefore, the information that they can be collected is compared, and in down-stream, the data that generate is carried out to deep processing processing and analysis.The enhancing of the raising of the sensitivity of the utility model product and the ability of Information Monitoring, makes it be applied in field widely.
Brief description of the drawings
Fig. 1 is cross-sectional view of the present utility model.
Fig. 2 is plan structure schematic diagram of the present utility model.
Wherein, 1, lens, 2, window, 3, optical filter, 4, PIN diode, 5, silica gel ring, 6, pyroelectric ceramics, 7, upper watchcase, 8, shell, 9, aluminium base, 10, cavity, 11, pin, 12, FET pipe, 13, wire column, 14, hole, 15, pyroelectric ceramics overlay area.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
The structure of infrared ray sensor of the present utility model is referring to Fig. 1 and Fig. 2.This infrared ray sensor mainly comprises lens 1, is positioned at the parts compositions such as the shell 8 of the PIN diode 4 of lens 1 below, metal, aluminium base 9, pin one 1.
Wherein, PIN diode 4 is positioned at the shell 8 of metal, and be located on aluminium base 9, on aluminium base, be furnished with circuit, the upper watchcase 7 of shell is provided with window 2, the lens 1 of optically focused are located on the window 2 of watchcase, PIN diode 4 and preamplifier---and FET pipe (field effect transistor) 12 is electrically connected.Upper watchcase 7 is provided with pyroelectric ceramics 6, is coated with optical filter 3 on pyroelectric ceramics 6.Upper watchcase 7 is provided with hole 14, and wire column 13, through hole 14, is electrically connected the electrode of pyroelectric ceramics and aluminium base, and is electrically connected with FET pipe.Wire column 13 can also be replaced with metal lead wire, between the electrode on electrode and the aluminium base of pyroelectric ceramics, stamps lead-in wire, to realize the electric connection between them.
In another is implemented, FET pipe of the each configuration of PIN diode and pyroelectric ceramics.Two FET pipes access respectively the port of intelligent controller.In such cases, pin will have 6.
Outer ledge at pyroelectric ceramics 6 and optical filter 3 is provided with silica gel ring 5.Silica gel ring 5 wraps in the outward flange of pyroelectric ceramics, and it can protect pyroelectric ceramics.
Shell comprises cavity 10, in cavity 10, is filled with packaging plastic.Packaging plastic is generally epoxy resin, can be also transparent silica gel.
The lower edge of lens 1 is placed on the inward flange of watchcase.This structure makes the lower end of lens have upper watchcase to support, and the location of lens can be more accurate.If do not encapsulated in the cavity in shell, in this structure, lens are by closed window and then play the effect of closed cavity.
In another embodiment, silica gel ring 5 inner surfaces are coated with metallic film composite bed, and metallic film composite bed comprises the metal film layer of outer field insulating barrier and insulating barrier inner side.Metal film layer is attached to the inner side of silica gel ring, for improving the interference free performance of pyroelectric ceramics.
As shown in Figure 2, the area of pyroelectric ceramics overlay area 15 is much larger than the overlay area of lens 1, and therefore, pyroelectric ceramics inductor can better pick up infrared signal, has increased the sensitivity of whole transducer.In the common application that can predict, PIN diode is in order to accurately to pick up infrared wave segment information; Pyroelectric ceramics can be in order to pick up ultrared energy information.Based on the infrared ray sensor of the utility model technology, due to its gather infrared ray information be multi-source with difference tendency, therefore, it has abundanter amount of information, follow-up it is processed, processed and analyzes, and can realize more function.
Above-mentioned execution mode is only preferred implementation of the present utility model; the scope that can not limit with this utility model protection, the variation of any unsubstantiality that those skilled in the art does on basis of the present utility model and replacement all belong to the utility model scope required for protection.
Claims (4)
1. an infrared ray sensor, comprises lens and the PIN diode that is positioned at lens below, and PIN diode is positioned at the shell of metal, and be located on aluminium base, the upper watchcase of shell is provided with window, and lens are located on the window of watchcase, and PIN diode and FET pipe are electrically connected; It is characterized in that: described upper watchcase is provided with pyroelectric ceramics, is coated with optical filter on pyroelectric ceramics; Described upper watchcase is provided with hole, and a wire column, through described hole, is electrically connected the electrode of pyroelectric ceramics and described aluminium base, and is electrically connected with FET pipe.
2. infrared ray sensor according to claim 1, is characterized in that: the outer ledge at described pyroelectric ceramics and described optical filter is provided with silica gel ring.
3. infrared ray sensor according to claim 1, is characterized in that: described shell comprises cavity, is filled with packaging plastic in cavity.
4. infrared ray sensor according to claim 1, is characterized in that: the lower edge of described lens is placed on described upper watchcase.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420227520.1U CN203910826U (en) | 2014-05-06 | 2014-05-06 | Infrared ray sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420227520.1U CN203910826U (en) | 2014-05-06 | 2014-05-06 | Infrared ray sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203910826U true CN203910826U (en) | 2014-10-29 |
Family
ID=51785077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420227520.1U Expired - Lifetime CN203910826U (en) | 2014-05-06 | 2014-05-06 | Infrared ray sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203910826U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110146176A (en) * | 2019-06-21 | 2019-08-20 | 中国人民解放军陆军工程大学 | A kind of infrared sensor |
-
2014
- 2014-05-06 CN CN201420227520.1U patent/CN203910826U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110146176A (en) * | 2019-06-21 | 2019-08-20 | 中国人民解放军陆军工程大学 | A kind of infrared sensor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 518000, 95, Fifth Industrial Zone, Mashan village, Gongming Town, Shenzhen, Guangdong, Baoan District Patentee after: SHENZHEN LIGHT ELECTRONICS Co.,Ltd. Address before: 518000, 95, Fifth Industrial Zone, Mashan village, Gongming Town, Shenzhen, Guangdong, Baoan District Patentee before: SHENZHEN LIGHT ELECTRONICS Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141029 |