CN203890490U - Argon curtain device for CZ-Si single crystal furnace - Google Patents
Argon curtain device for CZ-Si single crystal furnace Download PDFInfo
- Publication number
- CN203890490U CN203890490U CN201320782705.4U CN201320782705U CN203890490U CN 203890490 U CN203890490 U CN 203890490U CN 201320782705 U CN201320782705 U CN 201320782705U CN 203890490 U CN203890490 U CN 203890490U
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- CN
- China
- Prior art keywords
- single crystal
- argon gas
- silicon single
- curtain device
- furnace
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 84
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 229910052786 argon Inorganic materials 0.000 title claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 239000007789 gas Substances 0.000 claims abstract description 35
- 239000007921 spray Substances 0.000 claims description 10
- 230000004907 flux Effects 0.000 claims description 3
- 230000001788 irregular Effects 0.000 claims description 3
- 238000009826 distribution Methods 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model provides an argon curtain device for a CZ-Si single crystal furnace. The device is mounted above a heat field of the CZ-Si single crystal furnace and comprises multiple gas nozzles in annular arrangement, wherein the gas nozzles are symmetrically distributed around the crystal axis. By adopting the argon curtain device provided by the utility model, the crystal growth speed, the growth interface temperature gradient and the interface shape can be adjusted, and the flaw distribution in the silicon single crystal is adjusted in certain range. The device also can be used for reducing the content of metals in a single crystal rod and increasing the crystal forming rate.
Description
Technical field
The utility model relates to a kind of argon gas curtain device for straight pulling silicon single crystal furnace.
Background technology
Approximately 85% unicircuit is to adopt to cut krousky (Czochralski) method (claiming again vertical pulling method) manufacture with semiconductor silicon single crystal body at present.In this method, polysilicon is put in quartz crucible, heat fused, then, will melt silicon and slightly do and lower the temperature, give certain condensate depression, the silicon single crystal of a particular crystal orientation (being called seed crystal) is contacted with melt silicon, by adjusting temperature and the upwards pulling speed of seed crystal of melt, while making seed body grow up to close-target diameter, improve pulling speed, make the nearly permanent growth in thickness of single crystal.In the final stage of process of growth, silicon melt in crucible proposes not yet completely, to the heat supplied of crucible, crystal diameter is gradually reduced to form a tail shape cone by increasing the pulling speed of crystal and adjusting, when enough hour of the point of cone, crystal will depart from melt, thereby completes the process of growth of crystal.
In silicon single crystal, there are widely two kinds of point defects: silicon interstitial atom and room.Generally, if in the normal lattice of silicon, the folder Siliciumatom of entering, this Siliciumatom just claims not silicon interstitial atom, the existence of silicon interstitial atom can cause the local silicon lattice stress (to external pressure) that risen; If in normal silicon crystal lattice, take out a Siliciumatom, left space is just called " room ", and room can make its lattice around be subject to inside pressure.Room accounts for leading crystal in rich room crystal (V-rich), and silicon interstitial atom accounts for leading crystal in Silicon-rich interstitial atom crystal (I-rich).Along with the carrying out of crystal growth, the temperature of crystal becomes room temperature from silicon fusing point, these two kinds of point defects by with other atom (comprising oxygen, carbon, nitrogen, silicon etc.) around by the process of the complexity such as compound, diffusion, gathering, form larger defect.
In silicon single crystal, by a title critical coefficient ξ
0=V/G=0.0013cm
2.min
-1.K
-1coefficient, the V here refers to the crystalline growth velocity at crystal growth interface place, G refers to the longitudinal temperature gradient at crystal growth interface place.As actual ξ
realbe greater than ξ
0time, what moment grew up to is rich room type (V-rich) crystal; As actual ξ
realbe less than ξ
0time, what moment grew up to is Silicon-rich interstitial atom type (I-rich) crystal.Can partly be interpreted as that the speed of growth of growth interface crystal and longitudinal temperature gradient determine defect type and the distribution at crystal initial stage jointly.First this theory is proposed by V.V Voronkov, and widely people know together.
Modern integrated circuits (IC processing procedure) be mostly taking silicon single crystal bar through cutting, the polished section that is processed into of mill, polishing, cleaning or epitaxial wafer manufacture as substrate material.According to purposes difference, need again quantity not wait " testing plate " (to be called: " Test and Monitor Wafer ", be used for monitoring IC process parameter, such as particle, focusing, quality of oxide layer etc.), " positive " (be called " Prime Wafer ", be used for manufacturing circuit chip) etc., they require the defect in silicon single crystal flake is different.For example: " testing plate " of monitoring subenvironment particle level is taking (I-rich) silicon chip of rich interstitial atom Siliciumatom type for the best, and drawing soon rich room sheet (V-rich) that adds extension is a kind of positive (Prime Wafer) of commonly using.
Therefore in the whole process of growth of silicon single-crystal, pass through to control ξ
rea=ξ
0=0.0013cm
2.min
-1.K
-1can regulate the distribution of defect in silicon single crystal.In engineering, there are many means to use, for example: it is very important controlling the indoor thermal field being made up of graphite member and lagging material of single crystal growing furnace; In addition, crucible position, crucible turn, crystalline substance turns by adjusting, crystalline growth velocity etc. also can regulate G.
Utility model content
The purpose of this utility model is to provide a kind of argon gas curtain device for straight pulling silicon single crystal furnace, and this device can be adjusted crystalline growth velocity and growth interface thermograde and interface shape, regulates the defect distribution in silicon single crystal in certain scope.
For achieving the above object, the utility model is by the following technical solutions:
For an argon gas curtain device for straight pulling silicon single crystal furnace, this device is arranged on the thermal field top of straight pulling silicon single crystal furnace, comprises the several valves that are circular layout, and these several valves are symmetric around crystal axis.
Preferably, described several valves are installed the below of the bell of single crystal growing furnace in the mode of flange, and the spray orifice of valve is towards furnace bottom.
Preferably, below the bell of single crystal growing furnace, a cup is installed, described several valves are arranged on the inwall of this cup, and the spray orifice of valve is towards crystal axis.
Preferably, the cross-sectional shape of described valve is circle, ellipse, square, rectangle or other irregular shape.The section area of described valve is preferably 1～350mm
2.
Preferably, the quantity of described valve is 2～500, is preferably 12.
Preferably, the edge shape of described valve be have chamfering or for circular-arc.
Preferably, the total flux of the argon gas by all valves is 10～300slpm.Flow by the argon gas on each valve can be identical, also can control separately by changing the section area of valve.
The utility model has the advantage of:
Argon gas curtain device of the present utility model can be adjusted crystalline growth velocity and growth interface thermograde and interface shape, regulates the defect distribution in silicon single crystal in certain scope.This device can also reduce the content of metal in single crystal rod, improves crystal forming rate.
Brief description of the drawings
Fig. 1 is the structural representation of straight pulling silicon single crystal furnace thermal field.
Fig. 2 is that argon gas curtain is arranged on the structural representation on the bell of single crystal growing furnace in flange mode.
Fig. 3 is the sectional view of flange position in Fig. 2.
Fig. 4 is the distribution schematic diagram of argon gas mouth on flange.
Fig. 5 is that argon gas curtain is arranged on the structural representation on the bell of single crystal growing furnace in the mode of cup.
Fig. 6 is the sectional view of cup position in Fig. 5.
Embodiment
As shown in Figure 1, the hot system of straight pulling silicon single crystal furnace comprises at the bottom of upper furnace tube 1, bell 2, heat shielding 3, upper insulation 4, upper thermal insulating seat 5, middle insulation 6, heat-preservation cylinder 7, well heater 8, lower stove cylinder 9, end insulation 10, electrode 11, battery lead plate 12, pneumatic outlet 13, lower shaft 14, crucible 15, mid-game 16, graphite crucible 17, quartz crucible 18, silicon melt 19, heat shielding is supported to 20, and the side of lower stove cylinder or bottom are provided with the outlet (as shown in Figure 1, 2) of discharging for argon gas.The upper furnace tube 1 of the white single crystal growing furnace of argon gas enters furnace chamber along the direction of arrow, descends in vain the outlet on stove cylinder to discharge.
Argon gas curtain device of the present utility model is arranged on the thermal field top of straight pulling silicon single crystal furnace, comprises the several valves that are circular layout, and these several valves are symmetric around crystal axis.As shown in Figure 2,3, the below that the mode that this device can flange is installed the bell 2 of single crystal growing furnace.Flange 21 is screwed on bell 2, and flange 21 is provided with sealing groove 25, seals at the interior mounting O-shaped sealing-ring 22 of sealing groove 25.Flange 21 is provided with the valve 24 of argon gas entrance 23 and several ejection argon gas, and several valves 24 are arranged on flange 21 equably.As shown in Figure 4, several valves can design on the lower surface or side of flange, and spray orifice can be towards crystal axis or towards furnace chamber bottom.Argon gas sprays by valve, due to the impact of pressure reduction, argon gas from the spray orifice of valve is discharged with not only to the inside but also the downward direction mode of blowing flow.
Except above mounting means, as shown in Figure 5,6, a cup 26 can also be installed below the bell of single crystal growing furnace, this cup 26 is bilayer structure, the lower end closure of inside and outside wall, the upper end of this cup 26 is connected on bell 2 by screw 27 and hanging strip 28.On the outer wall of this cup, be provided with argon gas entrance 29, several valves 30 are arranged in the inwall of this cup or the lower end closure of inside and outside wall, distribute symmetrically around crystal axis.The spray orifice of several like this valves can be towards crystal axis, also can be towards furnace chamber bottom.Argon gas sprays by valve, due to the impact of pressure reduction, argon gas from the spray orifice of valve is discharged with not only to the inside but also the downward direction mode of blowing flow.
The cross-sectional shape of valve and section area can be selected according to actual needs, for example, can be circle, ellipse, square, rectangle or other irregular shape.The section area of valve can be at 1～350mm
2in scope, adjust.The quantity of valve is 2～500, is preferably 12.The edge shape of valve can for have chamfering or for circular-arc.The total flux of the argon gas by all valves is 10～300slpm.Flow by the argon gas on each valve can be identical, also can control separately by changing the section area of valve.
Adopt argon gas curtain device of the present utility model, by regulating argon flow amount in valve, can adjust partly the thermograde at shape, crystalline growth velocity and the interface of growth interface.The principle regulating is: strengthen the temperature that argon flow amount is equivalent to reduce crystal edge, dashed forward more to melt in the edge on crystal growth limit, circle; Make crystal some stage in growth, the shape at interface becomes more smooth, and the defect control in monocrystalline barred body is more prone to.In addition, strengthen after the argon flow amount in valve, reduced the chance of metallic impurity and crystal bar Surface Contact, reduced the metal content in crystal, blown again a part of silicon oxide atmosphere that crystal may exist off around, the crystal forming rate improving from face.
Claims (9)
1. for an argon gas curtain device for straight pulling silicon single crystal furnace, it is characterized in that, this device is arranged on the thermal field top of straight pulling silicon single crystal furnace, comprises the several valves that are circular layout, and these several valves are symmetric around crystal axis.
2. the argon gas curtain device for straight pulling silicon single crystal furnace according to claim 1, is characterized in that, described several valves are installed the below of the bell of single crystal growing furnace in the mode of flange, and the spray orifice of valve is towards furnace bottom.
3. the argon gas curtain device for straight pulling silicon single crystal furnace according to claim 1, is characterized in that, below the bell of single crystal growing furnace, a cup is installed, and described several valves are arranged on the inwall of this cup, and the spray orifice of valve is towards crystal axis.
4. according to the argon gas curtain device for straight pulling silicon single crystal furnace described in any one in claim 1～3, it is characterized in that, the cross-sectional shape of described valve is circle, ellipse, square, rectangle or other irregular shape.
5. the argon gas curtain device for straight pulling silicon single crystal furnace according to claim 4, is characterized in that, the section area of described valve is 1～350mm
2.
6. according to the argon gas curtain device for straight pulling silicon single crystal furnace described in any one in claim 1～3, it is characterized in that, the quantity of described valve is 2～500.
7. the argon gas curtain device for straight pulling silicon single crystal furnace according to claim 6, is characterized in that, the number of described valve is 12.
8. according to the argon gas curtain device for straight pulling silicon single crystal furnace described in any one in claim 1～3, it is characterized in that, the edge shape of described valve be have chamfering or for circular-arc.
9. according to the argon gas curtain device for straight pulling silicon single crystal furnace described in any one in claim 1～3, it is characterized in that, the total flux of the argon gas by all valves is 10～300slpm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320782705.4U CN203890490U (en) | 2013-12-02 | 2013-12-02 | Argon curtain device for CZ-Si single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320782705.4U CN203890490U (en) | 2013-12-02 | 2013-12-02 | Argon curtain device for CZ-Si single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203890490U true CN203890490U (en) | 2014-10-22 |
Family
ID=51716916
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320782705.4U Expired - Lifetime CN203890490U (en) | 2013-12-02 | 2013-12-02 | Argon curtain device for CZ-Si single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203890490U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107513767A (en) * | 2017-09-25 | 2017-12-26 | 常州大学 | A kind of thermograde generation device and application method suitable for polysilicon vertical-growth mechanism |
| CN109554756A (en) * | 2018-12-27 | 2019-04-02 | 西安奕斯伟硅片技术有限公司 | The preparation method and monocrystalline silicon of a kind of single crystal pulling apparatus, monocrystalline silicon |
-
2013
- 2013-12-02 CN CN201320782705.4U patent/CN203890490U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107513767A (en) * | 2017-09-25 | 2017-12-26 | 常州大学 | A kind of thermograde generation device and application method suitable for polysilicon vertical-growth mechanism |
| CN107513767B (en) * | 2017-09-25 | 2020-02-07 | 常州大学 | Temperature gradient generating device suitable for polycrystalline silicon vertical growth mechanism and using method |
| CN109554756A (en) * | 2018-12-27 | 2019-04-02 | 西安奕斯伟硅片技术有限公司 | The preparation method and monocrystalline silicon of a kind of single crystal pulling apparatus, monocrystalline silicon |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150612 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150612 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM ADVANCED MATERIALS CO.,LTD. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141022 |