CN203850295U - IGBT module packaging structure of inverter - Google Patents
IGBT module packaging structure of inverter Download PDFInfo
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- CN203850295U CN203850295U CN201420142363.4U CN201420142363U CN203850295U CN 203850295 U CN203850295 U CN 203850295U CN 201420142363 U CN201420142363 U CN 201420142363U CN 203850295 U CN203850295 U CN 203850295U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Abstract
The utility model discloses an IGBT module packaging structure of an inverter. The positive input end and the negative input end of each half-bridge IGBT module are respectively arranged on the lower surface of the chip. A buffer capacitor can be respectively welded on the surfaces of the positive input end area and the negative input end area on the surface of a first insulation ceramic substrate, thereby maximally eliminating pin inductance of the IGBT module through shortcircuit. An E pole of an upper half-bridge IGBT chip and a C pole of the lower half-bridge IGBT chip of each half-bridge IGBT module are respectively arranged on the upper surface of the chip, and can be located far from a water cooling board, thereby reducing an equivalent parasitic capacitance, reducing earth common-mode interference current, and improving EMC performance of the inverter. A binding line of each phase half-bridge IGBT module is saved, thereby improving current capability and prolonging service life, reducing chip area and reducing inverter cost. Electric pins of each phase half-bridge IGBT module are directly welded on the insulation ceramic substrate and a chip. The distances among the positive input end, the negative input end and phase output pin of each phase half-bridge IGBT module are small, thereby realizing short outlet wire of the inverter, simplifying wiring and ensuring no easy heating of an inner chamber by copper bars.
Description
Technical field
The utility model relates to motor inverter, particularly a kind of inverter IGBT module encapsulation construction.
Background technology
Electric automobile progresses into automobile market because of fuel-economizing, environmental protection, electric machine controller (inverter) wherein, for electric automobile kernel component, itself and motor have formed " engine " of new-energy automobile jointly, and the Cost And Performance of electric automobile is had an immense impact on.
Kernel component in inverter, IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) module occupied heating more than more than 40% cost and 90%, its encapsulation quality and machinery heat radiation are arranged, have greatly affected the performance of whole inverter.
As shown in Figure 1, each half-bridge IGBT module includes two igbt chips of upper and lower half-bridge, and each igbt chip has three electrode C, E, G, and wherein C, E are for conduction current, the control ON/OFF pin that G is igbt chip.The C utmost point of lower half-bridge igbt chip forms phase output pin with the interconnection of the E utmost point of upper half-bridge igbt chip, and the C utmost point of upper half-bridge igbt chip and the E utmost point of second bridge chip are respectively input T+, the T-of this half-bridge IGBT module.
As shown in Figure 2 and Figure 3, igbt chip one side is the E utmost point to the principle of compositionality of tradition half-bridge IGBT module, and one side is the C utmost point.Tradition half-bridge IGBT module, ceramic insulating substrate (DCB) surf zone arranges positive input terminal (T+) region, phase output area, negative input end (T-) region, wherein going up half-bridge igbt chip place is positive input terminal (T+) region, lower half-bridge igbt chip place is phase output area, lower half-bridge igbt chip one side place is negative input end (T-) region, DCB surface arranges electrical isolation region between two regions, the upper half-bridge igbt chip C utmost point is welded to positive input terminal (T+) region of DCB, the lower half-bridge igbt chip C utmost point is welded to the phase output area of DCB, the lower half-bridge igbt chip E utmost point is guided to negative input end (T-) region of DCB by tiny binding line, the upper half-bridge igbt chip E utmost point is guided to the phase output area of DCB by tiny binding line, make positive input terminal (T+) region by binding line, negative input end (T-) region, phase output area connects corresponding power pin, DCB contacts heat radiation by hot fat with cooled plate one side.Tradition half-bridge IGBT module, semiconductor igbt chip accounts for the more than 50% of cost, is one side heat radiation, and radiating efficiency is low, and thermal resistance is high, and thermal capacitance is low, for ensureing enough current capacities, needs to use large-area igbt chip, causes cost to rise.
Binding line, at galvanization adstante febre, can produce stress to igbt chip and DCB because expanding, and causes the inefficacy of IGBT module.Automotive grade IGBT module has specified useful life more than 10000h, and binding line technology is technical grade IGBT module generic encapsulation technology, is generally the technical bottleneck of automotive grade IGBT module.Simultaneously, binding line causes large (>15nH) of IGBT module stray inductance, outside bus capacitor cannot short circuit IGBT modular power pin stray inductance, therefore di/dt when switch can be coupled out larger due to voltage spikes, fragile IGBT, therefore can only limit IGBT switching speed, increases switching loss, cause inverter efficiency to reduce, current capacity declines.
The phase output area on DCB surface, DCB insulating barrier and cooled plate form an equivalent capacity, due to DCB surface and cold drawing surface area larger, DCB insulating barrier is very thin, so parasitic capacitance is larger, the pulse voltage of exporting mutually generation when normal work can produce larger common mode disturbances electric current over the ground, and electromagnetic interference (Electromagnetic Interference is called for short EMI) is serious.The current capacity of tiny binding line is very weak, often at semiconductor igbt chip not yet when excess temperature (Tj<150 degree), and the bound line restriction of electric current.
As shown in Figure 4, conventional IGBT module cooling processing mode is that the flat half-bridge IGBT module large area, thickness is little is tiled in cooled plate, and cross-over connection meeting long or cross direction causes three-phase IGBT module positive and negative busbar, so far apart between phase line.For convenience of client's wiring, conventionally require inverter IGBT module three-phase output line adjacent, the outlet of IGBT module phase need longer cabling and bending just can realize, phase outlet complexity, and long cabling makes the temperature rise of inverter inner chamber, makes electronic devices and components work under bad environment.The positive and negative busbar of three-phase half-bridge IGBT module is separated by far, needs the bus capacitor of three pairs of pins to dock with it, can ensure compared with reduced parasitic inductances, connects operation many, produces complexity, and failure rate is high.Three-phase half-bridge IGBT module needs larger area cooled plate to cover, and conventional cooled plate is thick and heavy, makes the power density of inverter limited.The series connection of three-phase half-bridge IGBT module water channel, through front two-phase half-bridge IGBT module heating, when current process third phase half-bridge IGBT module, water temperature significantly rises, and current capacity is declined.
Utility model content
The technical problems to be solved in the utility model is to provide a kind of inverter IGBT module encapsulation construction, can fall IGBT module pin inductance by internal damping capacitance short-circuit and allow larger switching speed and lower switching loss; Can reduce common mode disturbances electric current over the ground, improve the EMC(electromagnetic compatibility of inverter) performance; Can reduce inverter cost; Can make inverter outlet short, wiring is simple, and internal cavities is difficult for being heated by copper bar.
For solving the problems of the technologies described above, the inverter IGBT module encapsulation construction that the utility model provides, inverter IGBT module comprises A phase, B phase and C three half-bridge IGBT modules mutually, and each half-bridge IGBT module comprises half-bridge igbt chip and lower half-bridge igbt chip, the first ceramic insulating substrate, the second ceramic insulating substrate;
Described the first ceramic insulating substrate, surf zone arranges positive input terminal region, negative input end region;
Described positive input terminal region, negative input end insulate between region;
Each igbt chip has C, E, tri-electrodes of G, and wherein C, two electrodes of E are for conduction current, and G is the ON/OFF control pin of IGBT very;
The lower surface of upper half-bridge igbt chip is the C utmost point, and upper surface is the E utmost point;
The C utmost point of upper half-bridge igbt chip, by being welded to connect in the positive input terminal region on the first ceramic insulating substrate surface, forms IGBT half-bridge module positive input terminal;
The upper surface of lower half-bridge igbt chip is the C utmost point, and lower surface is the E utmost point;
The E utmost point of lower half-bridge igbt chip, by being welded to connect in the negative input end region on the first ceramic insulating substrate surface, forms IGBT half-bridge module negative input end;
The E utmost point of upper half-bridge igbt chip and the C utmost point of lower half-bridge igbt chip in the second ceramic insulating substrate surface soldered together, form phase output pin.
Preferably, each half-bridge IGBT module also comprises a buffer capacitor;
Described buffer capacitor, is connected across between the positive input terminal region, negative input end region on the first ceramic insulating substrate surface.
Preferably, the A phase of inverter IGBT module, B phase and C be three half-bridge IGBT modules mutually, are arranged between three intervals that 4 identical cooled plate form and are clamped by cooled plate.
Preferably, the ceramic insulating substrate of each phase half-bridge IGBT module is be coated with hot fat between the cooled plate of this phase half-bridge IGBT module.
Preferably, 4 identical cooled plate, by running through and tighten together at four screws at four angles.
Preferably, described cooled plate, top arranges water inlet, and below sets out the mouth of a river;
The water inlet of each cooled plate taps into respectively water pipe, and delivery port is connected water outlet pipe respectively.
Preferably, inlet tube and outlet tube is with sealing by O type circle between corresponding entery and delivery port.
Preferably, described cooled plate adopts flake aluminum to make, and cooled plate inside arranges fold or projection.
Inverter IGBT module encapsulation construction of the present utility model, because the positive input terminal T+ of half-bridge IGBT module and negative input end T-are all at chip lower surface, therefore available low sense buffer capacitor is crossed over insulating regions, weld with positive input terminal region, the negative input end region surface on the first ceramic insulating substrate surface respectively, this internal damping electric capacity to greatest extent short circuit falls IGBT module pin inductance, IGBT module is surplus chip self inductance only, can allow larger switching speed, lower switching loss; Because the E utmost point of upper half-bridge igbt chip of each phase half-bridge IGBT module and the C of lower half-bridge igbt chip are extremely all at the upper surface of chip, can be away from cooled plate, therefore equivalent parasitic capacitances reduces greatly, common mode disturbances current reduction over the ground, can improve the EMC(electromagnetic compatibility of inverter) performance; Each phase half-bridge IGBT module is cancelled binding line, and the current capacity of each phase half-bridge IGBT module and life-span are improved, and can make chip area reduce, and inverter cost reduces greatly; The electrical pin of each phase half-bridge IGBT module is welded direct to ceramic insulating substrate and chip, form upper and lower surface and be ceramic insulating substrate, centre is " sandwich " structure of igbt chip, therefore positive input terminal T+, negative input end T-and the phase output pin of three-phase half-bridge IGBT module are separated by very near, make inverter outlet short, wiring is simple, and internal cavities is difficult for being heated by copper bar.
Brief description of the drawings
In order to be illustrated more clearly in the technical solution of the utility model, below the accompanying drawing of the required use of the utility model is briefly described, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is IGBT half-bridge module schematic diagram;
Fig. 2 is IGBT tradition half-bridge module encapsulation vertical view;
Fig. 3 is IGBT tradition half-bridge module package-side view;
Fig. 4 conventional I GBT module wiring schematic diagram;
Fig. 5 is inverter IGBT module encapsulation construction one embodiment end view of the present utility model;
Fig. 6 is inverter IGBT module encapsulation construction one embodiment vertical view of the present utility model;
Fig. 7 is the integrated end view of inverter IGBT module encapsulation construction one embodiment machinery of the present utility model;
Fig. 8 is the integrated vertical view of inverter IGBT module encapsulation construction one embodiment machinery of the present utility model.
Embodiment
Below in conjunction with accompanying drawing, the technical scheme in the utility model is carried out to clear, complete description, obviously, described embodiment is a part of embodiment of the present utility model, instead of whole embodiment.Based on the embodiment in the utility model, all other embodiment that those of ordinary skill in the art obtain under the prerequisite of not making creative work, belong to the scope that the utility model is protected.
Embodiment mono-
Inverter IGBT(insulated gate bipolar transistor) module encapsulation construction, as shown in Figure 5, Figure 6, inverter IGBT module comprises A phase, B phase and C three half-bridge IGBT modules mutually, and each half-bridge IGBT module comprises half-bridge igbt chip and lower half-bridge igbt chip, the first ceramic insulating substrate (DCB), the second ceramic insulating substrate (DCB);
Described the first ceramic insulating substrate, surf zone arranges positive input terminal (T+) region, negative input end (T-) region, and described positive input terminal (T+) region, negative input end (T-) insulate between region;
Each igbt chip has C, E, tri-electrodes of G, and wherein C, two electrodes of E are for conduction current, and G is the ON/OFF control pin of IGBT very;
The lower surface of upper half-bridge igbt chip is the C utmost point, and upper surface is the E utmost point;
The C utmost point of upper half-bridge igbt chip, by being welded to connect in the positive input terminal region on the first ceramic insulating substrate surface, forms IGBT half-bridge module positive input terminal T+;
The upper surface of lower half-bridge igbt chip is the C utmost point, and lower surface is the E utmost point;
The E utmost point of lower half-bridge igbt chip, by being welded to connect in the negative input end region on the first ceramic insulating substrate surface, forms IGBT half-bridge module negative input end T-;
The E utmost point of upper half-bridge igbt chip and the C utmost point of lower half-bridge igbt chip in the second ceramic insulating substrate (DCB) surface soldered together, form phase output pin.
Preferably, each half-bridge IGBT module also comprises a buffer capacitor;
Described buffer capacitor, is connected across between the positive input terminal region, negative input end region on the first ceramic insulating substrate surface.
The inverter IGBT module encapsulation construction of embodiment mono-, the upper half-bridge igbt chip lower surface of each phase half-bridge IGBT module is still for the C utmost point is by being welded to connect in the positive input terminal region on the first ceramic insulating substrate surface, lower half-bridge igbt chip lower surface transforms the E utmost point into by being welded to connect in the negative input end region on the first ceramic insulating substrate surface, and positive input terminal region, the negative input end on the first ceramic insulating substrate surface arrange insulating regions between region.Because the positive input terminal T+ of half-bridge IGBT module and negative input end T-are all at chip lower surface, therefore available low sense buffer capacitor is crossed over insulating regions, weld with positive input terminal region, the negative input end region surface on the first ceramic insulating substrate surface respectively, this internal damping electric capacity to greatest extent short circuit falls IGBT module pin inductance, IGBT module is surplus chip self inductance only, can allow larger switching speed, lower switching loss.
The inverter IGBT module encapsulation construction of embodiment mono-, the E utmost point of upper half-bridge igbt chip and the C utmost point of lower half-bridge igbt chip are in the second ceramic insulating substrate surface soldered together, form phase output pin, cancel the E of upper half-bridge igbt chip extremely with the binding line between the C utmost point of lower half-bridge igbt chip, because the E utmost point of upper half-bridge igbt chip of each phase half-bridge IGBT module and the C of lower half-bridge igbt chip are extremely all at the upper surface of chip, can be away from cooled plate, therefore equivalent parasitic capacitances reduces greatly, common mode disturbances current reduction over the ground, can improve the EMC(electromagnetic compatibility of inverter) performance.
The inverter IGBT module encapsulation construction of embodiment mono-, each phase half-bridge IGBT module is cancelled binding line, and the current capacity of each phase half-bridge IGBT module and life-span are improved, and can reach automotive grade requirement.Because the current capacity of half-bridge IGBT module improves, also can make chip area reduce (near half), inverter cost reduces greatly.
The inverter IGBT module encapsulation construction of embodiment mono-, the electrical pin of each phase half-bridge IGBT module is welded direct to ceramic insulating substrate and chip, form upper and lower surface and be ceramic insulating substrate, centre is " sandwich " structure of igbt chip, therefore positive input terminal T+, negative input end T-and the phase output pin of three-phase half-bridge IGBT module are separated by very near, make inverter outlet short, wiring is simple, and internal cavities is difficult for being heated by copper bar.
Embodiment bis-
Inverter IGBT(insulated gate bipolar transistor based on embodiment mono-) module encapsulation construction, as shown in Figure 7, the A phase of inverter IGBT module, B phase and C be three half-bridge IGBT modules mutually, are arranged between three intervals that 4 identical cooled plate form and are clamped by cooled plate.
The inverter IGBT module encapsulation construction of embodiment bis-, the two-sided structure that all forms two-side radiation by hot fat contact cooled plate of each phase half-bridge IGBT module, on thermodynamics, be equivalent to two thermal resistance parallel connections, can realize two-sided cooling, therefore thermal resistance is only traditional one side cooling system half.
Embodiment tri-
Inverter IGBT(insulated gate bipolar transistor based on embodiment bis-) module encapsulation construction, as shown in Figure 8,4 identical cooled plate, by running through and tighten together at four screws at four angles.
Preferably, described cooled plate, top arranges water inlet, and below sets out the mouth of a river, and the water inlet of each cooled plate taps into respectively water pipe, and delivery port is connected water outlet pipe respectively.
Preferably, inlet tube and outlet tube is with sealing by O type circle between corresponding entery and delivery port.
Preferably, described cooled plate adopts flake aluminum to make, and cooled plate inside can arrange fold or projection, with increasing heat radiation area.
The inverter IGBT module encapsulating structure of embodiment tri-, current enter from cooled plate top, flow out from cooled plate below through water channel in parallel shunting, flow path length in arbitrary cooled plate and water resistance equate, water channel in parallel makes the equilibrium of half-bridge IGBT module heat dissipating, has promoted system power density and has ensured good current current-sharing effect.Cooling system is lightening, and integrated level is high, and power density is large.
Can find out, because three-phase half-bridge IGBT module lamination is placed, only the be separated by distance of individual module thickness of positive input terminal T+, negative input end T-, positive input terminal T+, negative input end T-and the phase output pin of three-phase half-bridge IGBT module are separated by very near, make inverter outlet short, wiring is simple, and internal cavities is difficult for being heated by copper bar.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all within spirit of the present utility model and principle, any amendment of making, be equal to replacement, improvement etc., within all should being included in the scope of the utility model protection.
Claims (8)
1. an inverter IGBT module encapsulation construction, inverter IGBT module comprises A phase, B phase and C three half-bridge IGBT modules mutually, it is characterized in that, each half-bridge IGBT module comprises half-bridge igbt chip and lower half-bridge igbt chip, the first ceramic insulating substrate, the second ceramic insulating substrate;
Described the first ceramic insulating substrate, surf zone arranges positive input terminal region, negative input end region;
Described positive input terminal region, negative input end insulate between region;
Each igbt chip has C, E, tri-electrodes of G, and wherein C, two electrodes of E are for conduction current, and G is the ON/OFF control pin of IGBT very;
The lower surface of upper half-bridge igbt chip is the C utmost point, and upper surface is the E utmost point;
The C utmost point of upper half-bridge igbt chip, by being welded to connect in the positive input terminal region on the first ceramic insulating substrate surface, forms IGBT half-bridge module positive input terminal;
The upper surface of lower half-bridge igbt chip is the C utmost point, and lower surface is the E utmost point;
The E utmost point of lower half-bridge igbt chip, by being welded to connect in the negative input end region on the first ceramic insulating substrate surface, forms IGBT half-bridge module negative input end;
The E utmost point of upper half-bridge igbt chip and the C utmost point of lower half-bridge igbt chip in the second ceramic insulating substrate surface soldered together, form phase output pin.
2. inverter IGBT module encapsulation construction according to claim 1, is characterized in that,
Each half-bridge IGBT module also comprises a buffer capacitor;
Described buffer capacitor, is connected across between the positive input terminal region, negative input end region on the first ceramic insulating substrate surface.
3. inverter IGBT module encapsulation construction according to claim 2, is characterized in that,
The A phase of inverter IGBT module, B phase and C be three half-bridge IGBT modules mutually, are arranged between three intervals that 4 identical cooled plate form and are clamped by cooled plate.
4. inverter IGBT module encapsulation construction according to claim 3, is characterized in that,
The ceramic insulating substrate of each phase half-bridge IGBT module is be coated with hot fat between the cooled plate of this phase half-bridge IGBT module.
5. inverter IGBT module encapsulation construction according to claim 4, is characterized in that,
4 identical cooled plate, by running through and tighten together at four screws at four angles.
6. inverter IGBT module encapsulation construction according to claim 5, is characterized in that,
Described cooled plate, top arranges water inlet, and below sets out the mouth of a river;
The water inlet of each cooled plate taps into respectively water pipe, and delivery port is connected water outlet pipe respectively.
7. inverter IGBT module encapsulation construction according to claim 6, is characterized in that, inlet tube and outlet tube is with sealing by O type circle between corresponding entery and delivery port.
8. inverter IGBT module encapsulation construction according to claim 7, is characterized in that,
Described cooled plate adopts flake aluminum to make, and cooled plate inside arranges fold or projection.
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| CN104952859A (en) * | 2014-03-27 | 2015-09-30 | 联合汽车电子有限公司 | IGBT module packaging structure of inverter |
| WO2019179527A1 (en) * | 2018-03-23 | 2019-09-26 | Chongqing Jinkang New Energy Vehicle Co., Ltd. | Inverter module having multiple half-bridge modules for a power converter of an electric vehicle |
| US10600578B2 (en) | 2018-04-26 | 2020-03-24 | Sf Motors, Inc. | Electric vehicle inverter module capacitors |
| US10600577B2 (en) | 2018-04-26 | 2020-03-24 | Sf Motors, Inc. | Electric vehicle inverter module capacitors |
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| US10660242B2 (en) | 2018-04-26 | 2020-05-19 | Chongqing Jinkang New Energy Vehicle Co., Ltd. | Electric vehicle inverter module heat sink |
| CN111200358A (en) * | 2018-11-19 | 2020-05-26 | 广东美的白色家电技术创新中心有限公司 | System for restraining electromagnetic interference of refrigerant radiator and household appliance |
| US10756649B2 (en) | 2018-03-23 | 2020-08-25 | Chongqing Jinkang New Energy Vehicle Co., Ltd. | Inverter module having multiple half-bridge modules for a power converter of an electric vehicle |
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| US10779445B2 (en) | 2018-03-23 | 2020-09-15 | Chongqing Jinkang New Energy Vehicle Co., Ltd. | Inverter module having multiple half-bridge modules for a power converter of an electric vehicle |
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| US10594230B2 (en) | 2018-03-23 | 2020-03-17 | Sf Motors, Inc. | Inverter module having multiple half-bridge modules for a power converter of an electric vehicle |
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| US10778117B2 (en) | 2018-04-17 | 2020-09-15 | Chongqing Jinkang New Energy Vehicle Co., Ltd. | Inverter module of an electric vehicle |
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| CN113097155A (en) * | 2021-03-30 | 2021-07-09 | 浙江翠展微电子有限公司 | Chip heat conduction module and preparation method thereof |
| CN116153883A (en) * | 2023-04-10 | 2023-05-23 | 广东仁懋电子有限公司 | IGBT packaging method and IGBT packaging structure |
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