CN203834053U - Device for annealing compound semiconductor material - Google Patents
Device for annealing compound semiconductor material Download PDFInfo
- Publication number
- CN203834053U CN203834053U CN201420247285.4U CN201420247285U CN203834053U CN 203834053 U CN203834053 U CN 203834053U CN 201420247285 U CN201420247285 U CN 201420247285U CN 203834053 U CN203834053 U CN 203834053U
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- CN
- China
- Prior art keywords
- crucible
- compound semiconductor
- gradient temperature
- well heater
- burner hearth
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- 238000000137 annealing Methods 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 150000001875 compounds Chemical class 0.000 title claims abstract description 18
- 239000010453 quartz Substances 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000009826 distribution Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 abstract description 9
- 230000005012 migration Effects 0.000 description 5
- 238000013508 migration Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000001089 thermophoresis Methods 0.000 description 1
Abstract
The utility model discloses a device for annealing a compound semiconductor material. The device is characterized by at least comprising a quartz furnace hearth (1), a gradient temperature heater (2), a crucible (3) and a crucible moving mechanism (4), wherein the crucible moving mechanism (4) is used for fixing the crucible (3), the crucible moving mechanism (4) is movably fixed in the quartz furnace hearth (1) to enable the crucible (3) to move left and right in the quartz furnace hearth (1); the gradient temperature heater (2) is arranged in the quartz furnace hearth (1). According to the device, according to the thickness of a crystal, the length of the gradient temperature field is set to quickly and effectively improve the uniformity of the semiconductor material.
Description
Technical field
The utility model relates to a kind of equipment of realizing compound semiconductor materials annealing, belongs to compound semiconductor materials thermal treatment process technology field.
Technical background
Compound semiconductor, owing to having special light transfer characteristic, has very important effect in fields such as LED, LD, solar cell (SC), photo-detectors, becomes the study hotspot of field of new.
But its special process of growth of compound semiconductor materials, component segregation, impurity and the doping and the precipitated phase that cause due to thermodynamic(al)equilibrium.Its use properties is very responsive to its structural integrity, and large size, fabricating low-defect-density material are the keys that ensures final application performance.Compound semiconductor materials is annealed, can effectively eliminate or reduce precipitation and be mingled with phase, improve the performance of material.
Summary of the invention
The utility model object is to provide a kind of equipment of realizing compound semiconductor materials annealing.So that according to crystal thickness, set the length of gradient temperature field, thereby improve fast and effectively the homogeneity of semiconductor material.
The utility model object is to realize like this, a kind of equipment of realizing compound semiconductor materials annealing, it is characterized in that: at least comprise: quartzy burner hearth, gradient temperature well heater, crucible, crucible travel mechanism, crucible is fixed by crucible travel mechanism, crucible travel mechanism is movable fixing in quartzy burner hearth, and crucible is moved left and right at quartzy burner hearth; Quartz burner hearth has gradient temperature well heater.
Described gradient temperature well heater is one group.
Described gradient temperature well heater is the high distribution of the low intermediate density of two ends density.
Described gradient temperature heater center is set to high temperature place 1100-900 DEG C, and two edges are set to low temperature place 1095-700 DEG C, and thermograde is 5 DEG C/cm.
Described gradient temperature well heater is many groups.
The utility model has the advantages that: 1, control by gradient temperature the migration that precipitates and be mingled with phase, be subject to concentration affects little, do not have the migration saturated phenomenon that relies on precipitation and be mingled with phase concentration diffusion.2, precipitate and be mingled with from germ nucleus and move to two edges, effectively having shortened range ability, thereby shortening annealing time.3, the multistage gradient temperature well heater that can distribute in annealing device burner hearth, realizes polylith crystal and anneals simultaneously.
Brief description of the drawings
Fig. 1 compound semiconductor annealing device sectional view;
Fig. 2 gradient temperature field pattern.
In figure, 1, quartzy burner hearth; 2, thermograde well heater; 3, crucible; 4, crucible travel mechanism; 5, crystal.
Embodiment
embodiment 1
As shown in Figure 1, a kind of equipment of realizing compound semiconductor materials annealing, at least comprise: quartzy burner hearth 1, gradient temperature well heater 2, crucible 3, crucible travel mechanism 4, the fixing crucible 3 of crucible travel mechanism 4, crucible travel mechanism 4 is fixed in the interior activity of quartzy burner hearth 1, and crucible 3 is moved left and right at quartzy burner hearth 1; Quartz burner hearth 1 has gradient temperature well heater 2.Gradient temperature well heater 2 is one group.Gradient temperature well heater 2 is the high distributions of the low intermediate density of two ends density.Gradient temperature heater center is set to high temperature place 1100-900 DEG C, and two edges are set to low temperature place 1095-700 DEG C, and thermograde is 5 DEG C/cm.
The crystal 5 that is 60mm by length is put into quartzy burner hearth 1 together with crucible 3, and the center of thermograde well heater 2 arranges high-temperature zone, and its temperature is 900 DEG C; It is 870 DEG C that edge arranges its temperature of cold zone, and the thermograde between high-temperature zone and cold zone is 5 DEG C/cm; By regulating crucible travel mechanism 4 germ nucleus to be placed in to the high-temperature zone of gradient temperature field.Annealing time 120h.After body of heater is cooling, take out crystal.
Crucible travel mechanism 4 comprises chassis 401, handle 402, two side slideways 403, and handle 402 is in one end of chassis 401 travel directions, and two side slideways 403 are in chassis 401 two side ends.
embodiment 2
As shown in Figure 1, a kind of equipment of realizing compound semiconductor materials annealing, at least comprise: quartzy burner hearth 1, gradient temperature well heater 2, crucible 3, crucible travel mechanism 4, the fixing crucible 3 of crucible travel mechanism 4, crucible travel mechanism 4 is fixed in the interior activity of quartzy burner hearth 1, and crucible 3 is moved left and right at quartzy burner hearth 1; Quartz burner hearth 1 has gradient temperature well heater 2.Gradient temperature well heater 2 is many groups.Gradient temperature well heater 2 is the high distributions of the low intermediate density of two ends density.
As shown in Figure 2, each group gradient temperature heater center is set to high temperature place 1100-900 DEG C, and two edges are set to low temperature place 1095-700 DEG C, and thermograde is 5 DEG C/cm.
The crystal 5 that is 60mm by length is put into quartzy burner hearth 1 together with crucible 3, and the center of thermograde well heater 2 arranges high-temperature zone, and its temperature is 900 DEG C; It is 870 DEG C that edge arranges its temperature of cold zone, and the thermograde between high-temperature zone and cold zone is 5 DEG C/cm; By regulating crucible travel mechanism 4 germ nucleus to be placed in to the high-temperature zone of corresponding gradient temperature field.Annealing time 120h.After body of heater is cooling, take out crystal.
The advantage of this annealing device is 1, gradient temperature is controlled precipitation and be mingled with the direction of motion (utilizing thermophoresis mechanism) of phase, is precipitated and to be mingled with the impact of phase concentration less, does not have the migration saturated phenomenon that relies on concentration flooding mechanism.2, precipitate and be mingled with therefrom mind-set two edges migration mutually, comparing traditional annealing device and be mingled with mutually from one end to the other side migration, effectively having shortened range ability, thereby shortened annealing time.3, multistage gradient temperature the well heater that can distribute in annealing device burner hearth, realizes polylith crystal and anneals simultaneously.
Claims (5)
1. realize the equipment of compound semiconductor materials annealing for one kind, it is characterized in that: at least comprise: quartzy burner hearth (1), gradient temperature well heater (2), crucible (3), crucible travel mechanism (4), crucible (3) is fixed by crucible travel mechanism (4), crucible travel mechanism (4) is movable fixing in quartzy burner hearth (1), and crucible (3) is moved left and right at quartzy burner hearth (1); Quartz burner hearth (1) has gradient temperature well heater (2).
2. a kind of equipment of realizing compound semiconductor materials annealing according to claim 1, is characterized in that: described gradient temperature well heater (2) is one group.
3. a kind of equipment of realizing compound semiconductor materials annealing according to claim 1, is characterized in that: described gradient temperature well heater (2) is the high distribution of the low intermediate density of two ends density.
4. a kind of equipment of realizing compound semiconductor materials annealing according to claim 1, it is characterized in that: described gradient temperature well heater (2) center is set to high temperature place 1100-900 DEG C, two edges are set to low temperature place 1095-700 DEG C, and thermograde is 5 DEG C/cm.
5. a kind of equipment of realizing compound semiconductor materials annealing according to claim 1, is characterized in that: described gradient temperature well heater (2) is many groups.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420247285.4U CN203834053U (en) | 2014-05-15 | 2014-05-15 | Device for annealing compound semiconductor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420247285.4U CN203834053U (en) | 2014-05-15 | 2014-05-15 | Device for annealing compound semiconductor material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203834053U true CN203834053U (en) | 2014-09-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420247285.4U Active CN203834053U (en) | 2014-05-15 | 2014-05-15 | Device for annealing compound semiconductor material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203834053U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106400102A (en) * | 2016-10-26 | 2017-02-15 | 北京鼎泰芯源科技发展有限公司 | Growth equipment and method thereof capable of achieving online annealing of single crystal |
-
2014
- 2014-05-15 CN CN201420247285.4U patent/CN203834053U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106400102A (en) * | 2016-10-26 | 2017-02-15 | 北京鼎泰芯源科技发展有限公司 | Growth equipment and method thereof capable of achieving online annealing of single crystal |
| CN106400102B (en) * | 2016-10-26 | 2019-06-28 | 珠海鼎泰芯源晶体有限公司 | A kind of growth apparatus and its method of achievable monocrystalline online annealing |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHAANXI IMDETEK CORPORATION LTD. Free format text: FORMER OWNER: XI'AN XIKAI COMPOUND MATERIAL CO., LTD. Effective date: 20150608 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 710072 XI'AN, SHAANXI PROVINCE TO: 710000 XI'AN, SHAANXI PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20150608 Address after: 018, Xi'an, Shaanxi Province, new West District, Qin and Han new city administrative committee CMC Avenue, 710000 exhibition room Patentee after: IMDETEK CORPORATION LTD. Address before: 710072 material science and technology building, Northwestern Polytechnical University, 127 Youyi West Road, Shaanxi, Xi'an 517 Patentee before: Xi'an Xi Kai compound-material company limited |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Device for annealing compound semiconductor material Effective date of registration: 20161124 Granted publication date: 20140917 Pledgee: Shaanxi Weicheng Xianyang rural commercial bank Limited by Share Ltd Pledgor: IMDETEK CORPORATION LTD. Registration number: 2016610000059 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20181109 Granted publication date: 20140917 Pledgee: Shaanxi Weicheng Xianyang rural commercial bank Limited by Share Ltd Pledgor: IMDETEK CORPORATION LTD. Registration number: 2016610000059 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Device for annealing compound semiconductor material Effective date of registration: 20190426 Granted publication date: 20140917 Pledgee: Shaanxi Weicheng Xianyang rural commercial bank Limited by Share Ltd Pledgor: IMDETEK CORPORATION LTD. Registration number: 2019610000079 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20210517 Granted publication date: 20140917 Pledgee: Shaanxi Weicheng Xianyang rural commercial bank Limited by Share Ltd. Pledgor: IMDETEK Corp.,Ltd. Registration number: 2019610000079 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right |