CN203826403U - TPT back film structure - Google Patents

TPT back film structure Download PDF

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Publication number
CN203826403U
CN203826403U CN201420136658.0U CN201420136658U CN203826403U CN 203826403 U CN203826403 U CN 203826403U CN 201420136658 U CN201420136658 U CN 201420136658U CN 203826403 U CN203826403 U CN 203826403U
Authority
CN
China
Prior art keywords
film
fluorine
eva
glued membrane
tpt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201420136658.0U
Other languages
Chinese (zh)
Inventor
石娜
李刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changzhou Huitian New Materials Co Ltd
Original Assignee
Changzhou Huitian New Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changzhou Huitian New Materials Co Ltd filed Critical Changzhou Huitian New Materials Co Ltd
Priority to CN201420136658.0U priority Critical patent/CN203826403U/en
Application granted granted Critical
Publication of CN203826403U publication Critical patent/CN203826403U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

The utility model relates to the technical field of solar cells, and especially relates to a TPT back film structure. The TPT back film structure includes a PET thick film, EVA films, fluorine films, a silicon wafer and glass. The fluorine films are composed of an upper fluorine film and a lower fluorine film. The PET thick film is arranged between the upper fluorine film and the lower fluorine film. The EVA films, composed of an upper EVA film and a lower EVA film, are disposed below the lower fluorine film. The silicon wafer is arranged between the upper EVA film and the lower EVA film. The glass is arranged below the lower EVA film. The TPT back film structure is simply structured and uses a double-faced fluorine-containing back film, and thus the excellent performance of the back film is ensured.

Description

TPT notacoria structure
Technical field
The utility model relates to a kind of notacoria, relates in particular to a kind of TPT notacoria structure.
Background technology
Require in useful life of current commercial crystal silicon solar batteries assembly be 25 years and notacoria as the photovoltaic encapsulation material directly contacting with external environment large area, should there is excellent weatherability, resistance to insulating properties, impact resistance and steam barrier.These excellent properties are very important to ensureing reliability, stability, the durability of solar cell.Otherwise there is the bad phenomenon such as delamination, be full of cracks, foaming, yellowing as film, can cause the situations such as battery module comes off, cell piece slippage, the reduction of battery effective output.
Summary of the invention
The technical problems to be solved in the utility model is: when existing notacoria cannot reach excellent quality, easily there is the bad phenomenon such as delamination, be full of cracks, foaming, yellowing, can cause the situations such as battery module comes off, cell piece slippage, the reduction of battery effective output, a kind of TPT notacoria structure is provided.
In order to overcome the defect existing in background technology, the utility model solves the technical scheme that its technical problem adopts: this TPT notacoria structure comprises PET thick film, EVA glued membrane, fluorine film, crystal silicon chip and glass, described fluorine film is divided into two-layer up and down, between fluorine film levels, PET thick film is set, the below of described lower floor fluorine film arranges EVA glued membrane, described EVA glued membrane is divided into two-layer up and down, between described EVA glued membrane is upper and lower two-layer, is provided with crystal silicon chip, below the EVA of lower floor glued membrane, is provided with glass.
The beneficial effects of the utility model are: this TPT notacoria structure is simple in structure, has used two-sided fluorine-containing notacoria, has ensured the excellent properties of notacoria.
Brief description of the drawings
Below in conjunction with drawings and Examples, the utility model is further illustrated.
Fig. 1 is structural representation of the present utility model;
Wherein: 1, PET thick film, 2, EVA glued membrane, 3, fluorine film, 4, crystal silicon chip, 5, glass.
Embodiment
Fig. 1 is structural representation of the present utility model, figure comprises PET thick film 1, EVA glued membrane 2, fluorine film 3, crystal silicon chip 4 and glass 5, fluorine film 3 is divided into two-layer up and down, between fluorine film 3 levels, PET thick film 1 is set, the below of lower floor's fluorine film 3 arranges EVA glued membrane 2, described EVA glued membrane 2 is divided into two-layer up and down, between EVA glued membrane is two-layer Shang Xia 2, is provided with crystal silicon chip 4, below the EVA of lower floor glued membrane 2, is provided with glass 5.
At the two-sided fluorine film 3 that is provided with of PET thick film 1, it is simple in structure, has ensured reliability, stability and the durability of solar cell.
This TPT notacoria structure is simple in structure, has used two-sided fluorine-containing notacoria, has ensured the excellent properties of notacoria.

Claims (1)

1. a TPT notacoria structure, comprise PET thick film (1), EVA glued membrane (2), fluorine film (3), crystal silicon chip (4) and glass (5), it is characterized in that: described fluorine film (3) is divided into two-layer up and down, between fluorine film (3) levels, PET thick film (1) is set, the below of described lower floor's fluorine film (3) arranges EVA glued membrane (2), described EVA glued membrane (2) is divided into two-layer up and down, between described EVA glued membrane (2) is upper and lower two-layer, be provided with crystal silicon chip (4), be provided with glass (5) in the below of the EVA of lower floor glued membrane (2).
CN201420136658.0U 2014-03-25 2014-03-25 TPT back film structure Expired - Fee Related CN203826403U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420136658.0U CN203826403U (en) 2014-03-25 2014-03-25 TPT back film structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420136658.0U CN203826403U (en) 2014-03-25 2014-03-25 TPT back film structure

Publications (1)

Publication Number Publication Date
CN203826403U true CN203826403U (en) 2014-09-10

Family

ID=51481872

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201420136658.0U Expired - Fee Related CN203826403U (en) 2014-03-25 2014-03-25 TPT back film structure

Country Status (1)

Country Link
CN (1) CN203826403U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110092997A (en) * 2019-04-15 2019-08-06 武汉高正新材料科技有限公司 High PVDF thin film material, preparation method, TPT notacoria, TPE notacoria and solar panel thoroughly

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110092997A (en) * 2019-04-15 2019-08-06 武汉高正新材料科技有限公司 High PVDF thin film material, preparation method, TPT notacoria, TPE notacoria and solar panel thoroughly

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140910

Termination date: 20160325