CN110092997A - High PVDF thin film material, preparation method, TPT notacoria, TPE notacoria and solar panel thoroughly - Google Patents
High PVDF thin film material, preparation method, TPT notacoria, TPE notacoria and solar panel thoroughly Download PDFInfo
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- CN110092997A CN110092997A CN201910299939.5A CN201910299939A CN110092997A CN 110092997 A CN110092997 A CN 110092997A CN 201910299939 A CN201910299939 A CN 201910299939A CN 110092997 A CN110092997 A CN 110092997A
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- 239000002033 PVDF binder Substances 0.000 title claims abstract description 88
- 229920002981 polyvinylidene fluoride Polymers 0.000 title claims abstract description 88
- 239000000463 material Substances 0.000 title claims abstract description 74
- 239000010409 thin film Substances 0.000 title claims abstract description 63
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000003963 antioxidant agent Substances 0.000 claims abstract description 28
- 230000003078 antioxidant effect Effects 0.000 claims abstract description 28
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 27
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 27
- 239000006097 ultraviolet radiation absorber Substances 0.000 claims abstract description 27
- 239000012745 toughening agent Substances 0.000 claims abstract description 26
- 238000009738 saturating Methods 0.000 claims abstract description 15
- 239000010408 film Substances 0.000 claims description 32
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 25
- 229910052731 fluorine Inorganic materials 0.000 claims description 25
- 239000011737 fluorine Substances 0.000 claims description 25
- 229920002799 BoPET Polymers 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000002834 transmittance Methods 0.000 abstract description 49
- BGYHLZZASRKEJE-UHFFFAOYSA-N [3-[3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoyloxy]-2,2-bis[3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoyloxymethyl]propyl] 3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoate Chemical group CC(C)(C)C1=C(O)C(C(C)(C)C)=CC(CCC(=O)OCC(COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)(COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)=C1 BGYHLZZASRKEJE-UHFFFAOYSA-N 0.000 description 11
- 230000003796 beauty Effects 0.000 description 11
- 229920003023 plastic Polymers 0.000 description 11
- 238000010998 test method Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 8
- 239000012528 membrane Substances 0.000 description 5
- 210000004379 membrane Anatomy 0.000 description 5
- 239000004594 Masterbatch (MB) Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 241001424688 Enceliopsis Species 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 238000005453 pelletization Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 210000002469 basement membrane Anatomy 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 210000004276 hyalin Anatomy 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012939 laminating adhesive Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2327/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers
- C08J2327/02—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment
- C08J2327/12—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
- C08J2327/16—Homopolymers or copolymers of vinylidene fluoride
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2433/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers
- C08J2433/04—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters
- C08J2433/06—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters of esters containing only carbon, hydrogen, and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C08J2433/10—Homopolymers or copolymers of methacrylic acid esters
- C08J2433/12—Homopolymers or copolymers of methyl methacrylate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
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- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Laminated Bodies (AREA)
Abstract
The invention belongs to PVDF thin film technical fields, and in particular to a kind of high PVDF thin film material, preparation method, TPT notacoria, TPE notacoria and solar panel.The saturating PVDF thin film material of the height, each component including following weight percentage: PVDF 60%~85%, PMMA 5%~30%, toughener 0%~20%, antioxidant 0~0.5%, ultraviolet absorber 0~0.5%.High PVDF thin film material thoroughly provided by the present invention has high light transmittance, makes notacoria with it, the light transmittance to Ambient light can be improved, to improve the generated output of solar panel.
Description
Technical field
The invention belongs to PVDF thin film technical fields, and in particular to a kind of high PVDF thin film material, preparation method,
TPT notacoria, TPE notacoria and solar panel.
Background technique
Solar battery back film is located at the back side of solar panel, as the light directly come into contact in a large area with external environment
Encapsulating material is lied prostrate, not only there is defencive function, it is (wet should also to have reliable insulation performance, resistance to long-term ageing in 25 years as long as
It is hot, xeothermic, ultraviolet), the performances such as vapor water barriers.Solar battery back film and EVA adhesive film, crystal-silicon battery slice, glass, frame,
Connection box set dresses up crystal silicon solar batteries plate.Notacoria can be divided into laminating adhesive type backboard and application type backboard according to manufacture craft.It is multiple
Membranous type backboard passes through the compound preparation of adhesive with the fluorine films such as PVF, PVDF or ETFE and PET basement membrane.The technique is that current notacoria produces
The main production of product.The market share accounts for master.In terms of material structure, notacoria mainly has the types such as TPT, TPE and PPE structure,
Wherein again most common with TPT and TPE structure, two kinds of structures account for about 90% market share.TPT, that is, two-sided structure of film (fluorine film+
PET+ fluorine film), it is mainly TPE, that is, single side fluorine film structure (fluorine film+PET+PE), that internal layer fluorine film is substituted with PE.It is independently ground by company
The GZF-120 type PVDF thin film produced is used for the fluorine film layer in TPT, TPE structure.
The whole world 2013-2018 photovoltaic increases aggregate demand 35-55GW, corresponding solar cell backboard demand 2.6- newly every year
400000000 square meters are all increased every year on average with 20% or so speed.Since photovoltaic module application environment complicates, photovoltaic module pair
The requirement of solar battery back film is also higher and higher, so that the requirement to the fluorine film on notacoria both sides is also higher and higher.Currently, existing
PVDF hyaline membrane light transmittance < 92%.Outdoors, a part of sunray is directly penetrated from the glass-film of solar panel
To cell piece, in addition the sunray of some, can be from the notacoria directive cell piece of solar panel by reflection.Cause
This, utilization to Ambient light may be implemented in the light transmittance for improving notacoria, to improve the power generation function of solar panel
Rate.
Summary of the invention
To solve the deficiencies in the prior art, the present invention provides a kind of high PVDF thin film materials, preparation method, TPT
Notacoria, TPE notacoria and solar panel.High PVDF thin-film material thoroughly provided by the present invention has high light transmittance, with it
Notacoria is made, the light transmittance to Ambient light can be improved, to improve the generated output of solar panel.
Technical solution provided by the present invention is as follows:
A kind of high PVDF thin film material, including PVDF 60%~85%, PMMA 10%~30%, toughener 0%~
20% (desirable end value 0% and 20%), antioxidant 0~0.5%, ultraviolet absorber 0~0.5%.
The light transmittance of the saturating PVDF thin film material of height provided by above-mentioned technical proposal is greater than 92%, using the material as notacoria
Notacoria light transmittance can be improved in material, to realize the utilization to Ambient light, to improve the power generation of solar panel
Power.
When addition toughener, processability and toughness can be improved.
Preferably, each component including following weight percentage: PVDF 70%~85%, PMMA 10%~30%,
Toughener 5%~15%, antioxidant 0~0.5%, ultraviolet absorber 0~0.5%.
It is furthermore preferred that PVDF content is 70%~75%.It is furthermore preferred that PVDF content is 74%~75%.
The light transmittance of the saturating PVDF thin film material of height provided by above-mentioned technical proposal is greater than 95%, using the material as notacoria
Material, the notacoria light transmittance that can be significantly improved, to realize the utilization to Ambient light, to significantly improve solar-electricity
The generated output of pond plate.
The present invention also provides the preparation methods of high PVDF thin film material thoroughly provided by the present invention, comprising the following steps:
It is melted after each component is mixed, obtains high PVDF thin film material thoroughly.
Specifically, high PVDF thin film material thoroughly can be prepared into master batch shape, specific steps are as follows:
1) PMMA is milled and is refined, specifically, flour mill milling refinement can be used；
2) PMMA powder and PVDF, toughener, antioxidant and ultraviolet absorber are stirred, obtain mixed powder, specifically
, mixing machine can be used and be stirred；
3) by mixed powder in 180~230 DEG C of heating meltings, specifically, granulator heating melting can be used；
4) by the material tie rod of melting or wire drawing and pelletizing, specifically, pelleter can be used；
5) material particles are sieved to obtain high PVDF thin film material master batch thoroughly, and are packaged into product again, specifically, pelletizing can adopt
Use pelleter.
The present invention also provides a kind of TPT notacoria, including the first fluorine film, the PET film being attached in first fluorine film with
And it is attached to the second fluorine film on the PET film, it is characterised in that: the material of first fluorine film and/or second fluorine film
Selected from high PVDF thin film material thoroughly provided by the present invention.
The light transmittance of TPT notacoria provided by above-mentioned technical proposal may be up to 90%.What the TPT notacoria can significantly improve
Notacoria light transmittance, to realize the utilization to Ambient light, to significantly improve the generated output of solar panel.
The present invention also provides a kind of TPE notacorias, including fluorine film, the PET film being attached in the fluorine film and are attached to
PE film on the PET film, it is characterised in that: the material of the fluorine film is selected from high PVDF thin film material thoroughly provided by the present invention
Material.
The light transmittance of TPE notacoria provided by above-mentioned technical proposal may be up to 90%.What the TPT notacoria can significantly improve
Notacoria light transmittance, to realize the utilization to Ambient light, to significantly improve the generated output of solar panel.
The present invention also provides a kind of solar panel, the solar panel has notacoria, it is characterised in that: institute
Stating notacoria is TPT notacoria provided by the present invention, alternatively, being TPE notacoria provided by the present invention.
Fluorine film in TPT notacoria and TPE notacoria is high PVDF thin film material backboard membrane thoroughly, can be by high PVDF thin film material thoroughly
Material master batch is prepared, specific steps are as follows:
1) the high heating of PVDF thin film material master batch thoroughly is squeezed out, obtains molten resin, specifically, secondary can be heated with casting machine
It squeezes out；
2) molten resin is formed and is cooled down by rubber roller, obtain backboard membrane；
3) to backboard membrane detection thickness, high-voltage motor, trimming and rewinding, finished product backboard membrane is obtained, and be packaged into product again,
Specifically, calibrator detection thickness can be used, corona machine high-voltage motor can be used, bead cutter trimming can be used, rewinding can be used
Machine rewinding.
Solar panel provided by above-mentioned technical proposal may be implemented anti-to environment because of the raising of notacoria light transmittance
The utilization of light is penetrated, generated output can be improved 2~3%.
Specific embodiment
The principles and features of the present invention are described below, and illustrated embodiment is served only for explaining the present invention, is not intended to
It limits the scope of the invention.
Embodiment 1
High PVDF thin film material thoroughly includes each component of following weight percentage: PVDF60%, PMMA 30%, toughening
Agent 9%, antioxidant 0.5%, ultraviolet absorber 0.5%.
PVDF is Zhejiang hugeization JHG-600.
PMMA is the odd beauty CM-207 of TaiWan, China.
Toughener is U.S.'s ROHM AND HAAS ACR KM-355P.
Antioxidant is antioxidant 1010.
Ultraviolet absorber is UV326.
It is melted after each component is mixed, and high PVDF thin film material thoroughly is prepared.
According to GB 2410-80 transparent plastic light transmittance and haze test method, to the light transmittance of high saturating PVDF thin film material
It is measured, light transmittance 88%.
Embodiment 2
High PVDF thin film material thoroughly includes each component of following weight percentage: PVDF70%, PMMA 20%, toughening
Agent 9%, antioxidant 0.5%, ultraviolet absorber 0.5%.
PVDF is Zhejiang hugeization JHG-600.
PMMA is the odd beauty CM-207 of TaiWan, China.
Toughener is U.S.'s ROHM AND HAAS ACR KM-355P.
Antioxidant is antioxidant 1010.
Ultraviolet absorber is UV326.
It is melted after each component is mixed, and high PVDF thin film material thoroughly is prepared.
According to GB 2410-80 transparent plastic light transmittance and haze test method, to the light transmittance of high saturating PVDF thin film material
It is measured, light transmittance 89%.
Embodiment 3
High PVDF thin film material thoroughly includes each component of following weight percentage: PVDF75%, PMMA 20%, toughening
Agent 4%, antioxidant 0.5%, ultraviolet absorber 0.5%.
PVDF is Zhejiang hugeization JHG-600.
PMMA is the odd beauty CM-207 of TaiWan, China.
Toughener is U.S.'s ROHM AND HAAS ACR KM-355P.
Antioxidant is antioxidant 1010.
Ultraviolet absorber is UV326.
It is melted after each component is mixed, and high PVDF thin film material thoroughly is prepared.
According to GB 2410-80 transparent plastic light transmittance and haze test method, to the light transmittance of high saturating PVDF thin film material
It is measured, light transmittance 96%.
Embodiment 4
High PVDF thin film material thoroughly includes each component of following weight percentage: PVDF74%, PMMA 25%, toughening
Agent 0%, antioxidant 0.5%, ultraviolet absorber 0.5%.
PVDF is Zhejiang hugeization JHG-600.
PMMA is the odd beauty CM-207 of TaiWan, China.
Antioxidant is antioxidant 1010.
Ultraviolet absorber is UV326.
It is melted after each component is mixed, and high PVDF thin film material thoroughly is prepared.
According to GB 2410-80 transparent plastic light transmittance and haze test method, to the light transmittance of high saturating PVDF thin film material
It is measured, light transmittance 94%.
Embodiment 5
High PVDF thin film material thoroughly includes each component of following weight percentage: PVDF 85%, PMMA 10% increases
Tough dose 4.25%, antioxidant 0.5%, ultraviolet absorber 0.25%.
PVDF is Zhejiang hugeization JHG-600.
PMMA is the odd beauty CM-207 of TaiWan, China.
Toughener is U.S.'s ROHM AND HAAS ACR KM-355P.
Antioxidant is antioxidant 1010.
Ultraviolet absorber is UV326.
It is melted after each component is mixed, and high PVDF thin film material thoroughly is prepared.
According to GB 2410-80 transparent plastic light transmittance and haze test method, to the light transmittance of high saturating PVDF thin film material
It is measured, light transmittance 92%.
Embodiment 6
High PVDF thin film material thoroughly includes each component of following weight percentage: PVDF 75%, PMMA5%, toughener
19.65%, antioxidant 0.25%, ultraviolet absorber 0.1%.
PVDF is Zhejiang hugeization JHG-600.
PMMA is the odd beauty CM-207 of TaiWan, China.
Toughener is U.S.'s ROHM AND HAAS ACR KM-355P.
Antioxidant is antioxidant 1010.
Ultraviolet absorber is UV326.
It is melted after each component is mixed, and high PVDF thin film material thoroughly is prepared.
According to GB 2410-80 transparent plastic light transmittance and haze test method, to the light transmittance of high saturating PVDF thin film material
It is measured, light transmittance 93%.
Embodiment 7
High PVDF thin film material thoroughly includes each component of following weight percentage: PVDF 60%, PMMA 30% increases
Tough dose 9.4%, antioxidant 0.1%, ultraviolet absorber 0.5%.
PVDF is Zhejiang hugeization JHG-600.
PMMA is the odd beauty CM-207 of TaiWan, China.
Toughener is U.S.'s ROHM AND HAAS ACR KM-355P.
Antioxidant is antioxidant 1010.
Ultraviolet absorber is UV326.
It is melted after each component is mixed, and high PVDF thin film material thoroughly is prepared.
According to GB 2410-80 transparent plastic light transmittance and haze test method, to the light transmittance of high saturating PVDF thin film material
It is measured, light transmittance 89%.
Comparative example 1
High PVDF thin film material thoroughly includes each component of following weight percentage: PVDF54%, PMMA 25%, toughening
Agent 20%, antioxidant 0.5%, ultraviolet absorber 0.5%.
PVDF is Zhejiang hugeization JHG-600.
PMMA is the odd beauty CM-207 of TaiWan, China.
Toughener is Dow EXL2311.
Antioxidant is antioxidant 1010.
Ultraviolet absorber is UV326.
It is melted after each component is mixed, and high PVDF thin film material thoroughly is prepared.
According to GB 2410-80 transparent plastic light transmittance and haze test method, to the light transmittance of high saturating PVDF thin film material
It is measured, light transmittance 83%.
Comparative example 2
High PVDF thin film material thoroughly includes each component of following weight percentage: PVDF54%, PMMA 25%, toughening
Agent 20%, antioxidant 0.5%, ultraviolet absorber 0.5%.
PVDF is Zhejiang hugeization JHG-600.
PMMA is the odd beauty CM-207 of TaiWan, China.
Toughener is Dow EXL2311.
Antioxidant is antioxidant 1010.
Ultraviolet absorber is UV326.
It is melted after each component is mixed, and high PVDF thin film material thoroughly is prepared.
According to GB 2410-80 transparent plastic light transmittance and haze test method, to the light transmittance of high saturating PVDF thin film material
It is measured, light transmittance 85%.
Comparative example 3
High PVDF thin film material thoroughly includes each component of following weight percentage: PVDF92%, PMMA6%, toughener
1%, antioxidant 0.5%, ultraviolet absorber 0.5%.
PVDF is Zhejiang hugeization JHG-600.
PMMA is the odd beauty CM-207 of TaiWan, China.
Toughener is Dow EXL2311.
Antioxidant is antioxidant 1010.
Ultraviolet absorber is UV326.
It is melted after each component is mixed, and high PVDF thin film material thoroughly is prepared.
According to GB 2410-80 transparent plastic light transmittance and haze test method, to the light transmittance of high saturating PVDF thin film material
It is measured, light transmittance 85%.
Comparative example 4
High PVDF thin film material thoroughly includes each component of following weight percentage: PVDF92%, PMMA6%, toughener
1%, antioxidant 0.5%, ultraviolet absorber 0.5%.
PVDF is Zhejiang hugeization JHG-600.
PMMA is the odd beauty CM-207 of TaiWan, China.
Toughener is Dow EXL2311.
Antioxidant is antioxidant 1010.
Ultraviolet absorber is UV326.
It is melted after each component is mixed, and high PVDF thin film material thoroughly is prepared.
According to GB 2410-80 transparent plastic light transmittance and haze test method, to the light transmittance of high saturating PVDF thin film material
It is measured, light transmittance 84%.
It can be seen that PVDF 60%~85% by comparative example 1, comparative example 2, comparative example 3, comparative example 4, and
For PMMA at 5%~30%, high PVDF thin film material thoroughly can obtain the light transmittance higher than 88% or more.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (6)
1. a kind of high PVDF thin film material, which is characterized in that each component including following weight percentage: PVDF 60%
~85%, PMMA 5%~30%, toughener 0%~20%, antioxidant 0~0.5%, ultraviolet absorber 0~0.5%.
2. high PVDF thin film material thoroughly according to claim 1, it is characterised in that: including each of following weight percentage
Component: PVDF 70%~85%, PMMA 10%~30%, toughener 5%~15%, antioxidant 0~0.5%, UV absorption
Agent 0~0.5%.
3. a kind of preparation method of high PVDF thin film material thoroughly according to claim 1 or 2, which is characterized in that including with
Lower step: melting after each component is mixed, and obtains high PVDF thin film material thoroughly.
4. a kind of TPT notacoria including the first fluorine film, the PET film being attached in first fluorine film and is attached to the PET film
On the second fluorine film, it is characterised in that: the material of first fluorine film and/or second fluorine film be selected from claims 1 or 2 institute
The saturating PVDF thin film material of the height stated.
5. a kind of TPE notacoria, including fluorine film, the PET film being attached in the fluorine film and the PE being attached on the PET film
Film, it is characterised in that: the material of the fluorine film is selected from high PVDF thin film material thoroughly of any of claims 1 or 2.
6. a kind of solar panel, the solar panel has notacoria, it is characterised in that: the notacoria is claim
TPT notacoria described in 4, alternatively, for TPE notacoria described in claim 5.
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|---|---|---|---|
| CN201910299939.5A CN110092997A (en) | 2019-04-15 | 2019-04-15 | High PVDF thin film material, preparation method, TPT notacoria, TPE notacoria and solar panel thoroughly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910299939.5A CN110092997A (en) | 2019-04-15 | 2019-04-15 | High PVDF thin film material, preparation method, TPT notacoria, TPE notacoria and solar panel thoroughly |
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| Publication Number | Publication Date |
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| CN110092997A true CN110092997A (en) | 2019-08-06 |
Family
ID=67444889
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| CN201910299939.5A Pending CN110092997A (en) | 2019-04-15 | 2019-04-15 | High PVDF thin film material, preparation method, TPT notacoria, TPE notacoria and solar panel thoroughly |
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| CN (1) | CN110092997A (en) |
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| CN106147088A (en) * | 2015-04-13 | 2016-11-23 | 江苏昊华光伏科技有限公司 | High-performance drip, fog dispersal PVDF composite canopy film |
| CN109337260A (en) * | 2018-11-13 | 2019-02-15 | 常州回天新材料有限公司 | A kind of transparent polyvinylidene fluoride film and its manufacturing method |
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| KR20110119417A (en) * | 2010-04-27 | 2011-11-02 | 에스케이씨 주식회사 | Mono-layer pvdf film and preparation method thereof |
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