CN203801109U - Maximum brightness enhancing module, silicone controlled rectifier dimming LED driving circuit and silicone controlled rectifier dimming LED driving system - Google Patents
Maximum brightness enhancing module, silicone controlled rectifier dimming LED driving circuit and silicone controlled rectifier dimming LED driving system Download PDFInfo
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- CN203801109U CN203801109U CN201420060480.6U CN201420060480U CN203801109U CN 203801109 U CN203801109 U CN 203801109U CN 201420060480 U CN201420060480 U CN 201420060480U CN 203801109 U CN203801109 U CN 203801109U
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Abstract
Disclosed is a silicone controlled rectifier dimming LED driving circuit. The drain of a second MOS transistor is connected with the source of a power switch MOS transistor, and the source of the second MOS transistor is connected with a sampling resistor. The output end of a maximum brightness enhancing module is electrically connected to a first input end of a peak current comparator and a feed-forward resistor through the drain of a first MOS transistor inside the maximum brightness enhancing module, and a current signal output by the first MOS transistor flows through the feed-forward resistor and generates direct-current bias voltage. The first input end of the peak current comparator is electrically connected with the sampling resistor through the feed-forward resistor, a second input end of the peak current comparator is electrically connected with the output end of a reference voltage source, and the output end of the peak current comparator is coupled to the gate of the second MOS transistor. The peak current comparator is used for comparing the sum of the voltage amplitudes of the feed-forward resistor and the sampling resistor with the voltage threshold of the reference voltage source and controlling on/off of the second MOS transistor. Through the maximum brightness enhancing module, the maximum current of the driving circuit when the driving circuit is connected with a silicone controlled rectifier dimmer is improved.
Description
Technical field
The utility model relates to LED and drives field, relates in particular to controllable silicon light modulation LED drive circuit and system that a kind of high-high brightness promotes.
Background technology
Referring to Fig. 1, the rough schematic view of the controllable silicon light modulation LED drive circuit of prior art.As shown in Figure 1, input a controllable silicon dimmer 102 of AC AC power 101 series connection, be connected to two inputs of rectifier bridge 103.Rectifier bridge 103 by capacitor C1 filtering, produces the sinusoidal voltage after a rectification by AC rectification.Resistance R 4 and capacitor C2 produce a low-voltage DC starts control chip 104.Transformer T1 has three windings, comprises a former limit winding T11, is connected between capacitor C1 and the drain electrode of power switch MOS transistor M1; A secondary winding T12, is connected between sustained diode 1 and secondary output capacitor C4; An auxiliary winding T13, is connected in between electric diode D2 and circuit ground.After circuit start, auxiliary winding T13 is control chip 104 power supplies; Auxiliary winding T13 also provides the information that detects sustained diode 1 current over-zero and detect output voltage overvoltage simultaneously.The controllable silicon light modulation LED drive circuit of prior art also comprises a bleeder resistance R1 and the switch M2 that releases conventionally; when anti exciting converter input current hour; control chip 104 is opened the switch M2 that releases, for controllable silicon dimmer 102 provides enough electric currents that maintains.
In above-mentioned traditional flyback LED drive circuit, there are following two shortcomings:
1) when used controllable silicon dimmer 102 maximum conduction angle degree hour, the output current of the output current of drive circuit when not using dimmer declines more;
2) bleeder resistance R1 and the switch M2 power consumption of releasing are higher, and loss LED drive circuit efficiency and temperature rise are higher, reduce system reliability.
Utility model content
The purpose of this utility model is, the problem existing for controllable silicon light modulation LED drive circuit in prior art, a kind of high-high brightness hoisting module, controllable silicon light modulation LED drive circuit and system are provided, by high-high brightness hoisting module, maximum current in the time of can improving drive circuit connection controllable silicon dimmer, saved leadage circuit simultaneously, the electric current that maintains of controllable silicon dimmer is provided with the input current of switch converters itself.
For achieving the above object, the utility model provides a kind of high-high brightness hoisting module, comprising: an operational amplifier, one first MOS transistor and a reference voltage source; The first input end of described operational amplifier is the input of described high-high brightness hoisting module, in order to receive a sampled voltage signal, its second input is connected with the output electricity of described reference voltage source, its output electricity is connected to the grid of described the first MOS transistor, described operational amplifier is controlled the conduction impedance of described the first MOS transistor, guarantees that two input terminal voltages equate during described operational amplifier closed loop work; The source electrode electricity of described the first MOS transistor is connected to the first input end of described operational amplifier, and its drain electrode is the output of described high-high brightness hoisting module, and output one current signal is in order to control the output current of a LED drive circuit.
For achieving the above object, the utility model also provides a kind of controllable silicon light modulation LED drive circuit, comprising: one second MOS transistor, a peak current comparator, feedforward resistance, a reference voltage source and a high-high brightness hoisting module described in the utility model; The drain electrode electricity of described the second MOS transistor is connected to the source electrode of a power switch MOS transistor, and the source electrode electricity of described the second MOS transistor connects a sampling resistor; The output of described high-high brightness hoisting module is connected to described peak current comparator first input end and described feedforward resistance by the drain electrode electricity of described the first MOS transistor, and the current signal of described the first MOS transistor output feedforward resistance of flowing through produces direct current (DC) bias; Described peak current comparator first input end is connected with sampling resistor electricity by described feedforward resistance, its second input is connected with the output electricity of described reference voltage source, its output is coupled to the grid of described the second MOS transistor, described peak current comparator, for by the voltage threshold comparison of the voltage magnitude sum of described feedforward resistance and sampling resistor and described reference voltage source, is controlled the conducting of described the second MOS transistor and closes.
For achieving the above object, the utility model also provides a kind of controllable silicon light modulation LED drive system, comprises a controllable silicon dimmer, a rectifier bridge, a bus capacitor, a sampling resistor and controllable silicon light modulation LED drive circuit described in the utility model; Described controllable silicon dimmer and one exchanges input source electricity and is connected, by adjusting the brightness of himself angle of flow control LED load; Described rectifier bridge is respectively with described controllable silicon dimmer and exchange input source electricity and is connected, for being that an amplitude is positive voltage signal by the sinusoidal signal rectification of interchange input source; Described bus capacitor is coupled to two outputs of described rectifier bridge and is connected with the drain electrode electricity of a power switch MOS transistor, is used to described power switch MOS transistor that high-frequency current path is provided; The input of described high-high brightness hoisting module is connected with the drain electrode electricity of described bus capacitor and described power switch MOS transistor respectively; The drain electrode of described the second MOS transistor is connected with the source electrode electricity of described power switch MOS transistor, and the source electrode of described the second MOS transistor is connected with described sampling resistor electricity; Described peak current comparator first input end is connected with described sampling resistor electricity by described feedforward resistance; Described sampling resistor is connected to LED load by a transformer or inductance electricity.
The utility model has the advantage of: by high-high brightness hoisting module, improved maximum current when drive circuit connects controllable silicon dimmer; Save leadage circuit simultaneously, the electric current that maintains of controllable silicon dimmer is provided with the input current of switch converters itself, improved LED drive circuit efficiency and system reliability.
Accompanying drawing explanation
Fig. 1, the rough schematic view of the controllable silicon light modulation LED drive circuit of prior art;
Fig. 2, the configuration diagram of controllable silicon light modulation LED drive circuit described in the utility model;
Fig. 3, the schematic diagram of voltage-dropping type controllable silicon light modulation LED drive system described in the utility model;
Fig. 4, the work typical waveform figure of voltage-dropping type controllable silicon light modulation LED drive system described in the utility model;
Fig. 5, the Vdim voltage of controllable silicon light modulation LED drive system described in the utility model and the graph of a relation of Vcs crest voltage;
Fig. 6, the schematic diagram of buck-boost type controllable silicon light modulation LED drive system described in the utility model;
Fig. 7, the schematic diagram of flyback controllable silicon light modulation LED drive system described in the utility model.
Embodiment
Controllable silicon light modulation LED drive circuit the utility model being provided below in conjunction with accompanying drawing and the execution mode of system elaborate.
With reference to figure 2, the configuration diagram of controllable silicon light modulation LED drive circuit described in the utility model, described drive circuit comprises: one second MOS transistor M2, a peak current comparator 209, feedforward resistance R 6, a reference voltage source ref1 and a high-high brightness hoisting module 21.
Described high-high brightness hoisting module 21 comprises: an operational amplifier 210, one first MOS transistor M3, a reference voltage source ref2, a voltage division processing unit and a filter unit.
Described voltage division processing unit receives outside amplitude to be positive voltage signal Vbus and to process.As preferred embodiment, described voltage division processing unit comprises on one divider resistance R2 and divider resistance R3 once; It is positive voltage signal Vbus that described upper divider resistance R2 one end receives outside amplitude, and the other end is connected with described lower divider resistance R3 electricity, described lower divider resistance R3 other end ground connection (for example chip ground).Upper divider resistance R2 and lower divider resistance R3 can pass through the processing to voltage signal Vbus, detect the cut angle information of outside controllable silicon dimmer.
Described filter unit respectively electricity is connected to the first input end of described voltage division processing unit and described operational amplifier 210, described filter unit, for the voltage signal after described voltage division processing cell processing is carried out to filtering, obtains the first input end that d. c. voltage signal Vdim exports described operational amplifier 210 to.As preferred embodiment, described filter unit comprises a filter resistance R4 and a filter capacitor C3; Described filter resistance R4 one end is coupled between described upper divider resistance R2 and lower divider resistance R3, and the other end respectively electricity is connected to the first input end of described filter capacitor C3 and described operational amplifier 210, described filter capacitor C3 other end ground connection.
The first input end of described operational amplifier 210 receives d. c. voltage signal Vdim, its second input is connected with the output electricity of described reference voltage source ref2, its output electricity is connected to the grid G of described the first MOS transistor M3, described operational amplifier 210 is controlled the conduction impedance of described the first MOS transistor M3, during the 210 closed loops work of described operational amplifier, guarantee that two input terminal voltages equate, thereby have the electric current first MOS transistor M3 that flows through.
Wherein, described voltage division processing unit and filter unit are selectable unit, the described first input end of stating operational amplifier 210 can be directly the input of described high-high brightness hoisting module 21, in order to receive a sampled voltage signal, in order to compare with the voltage signal of described reference voltage source ref2, described sampled voltage signal can be d. c. voltage signal Vdim.
The source S electricity of described the first MOS transistor is connected to the first input end of described operational amplifier 210, and its drain D is the output of described high-high brightness hoisting module 21, and output current signal is controlled the output current of LED drive circuit.The output of described high-high brightness hoisting module 21 is connected to described peak current comparator 209 first input ends and described feedforward resistance R 6 by the drain D electricity of described the first MOS transistor M3, the drain D output current signal of described the first MOS transistor M3 is injected into an input of peak current comparator 209, because the input impedance of peak current comparator 209 is very high, this electric current is all flowed through and is feedovered resistance R 6 and on R6, produce a DC offset voltage.
As optional execution mode, described high-high brightness hoisting module 21 further comprises an input resistance R5; Described input resistance R5 is serially connected between described filter resistance R4 and the first input end of described operational amplifier 210, and is connected with the source S electricity of described the first MOS transistor M3, for obtaining dividing potential drop and exporting described the first MOS transistor M3 to.Described input resistance R5 can omit, during omission described in input resistance R5 short circuit.Operational amplifier 210 is controlled the conduction impedance of the first MOS transistor M3, guarantee that two input terminal voltages equate, thereby input resistance R5 two ends can obtain a voltage during operational amplifier 210 closed loop work, and this voltage is Vdim-Vref2; The upper generation current of input resistance R5, its size is (Vdim-Vref2)/R5; This electric current first MOS transistor M3 that flows through, and be injected into the input of peak current comparator 209, because the input impedance of peak current comparator 209 is very high, all flow through feedforward resistance R 6 produce a DC offset voltage on R6 of this electric current.
The drain D electricity of described the second MOS transistor M2 is connected to the source S of a power switch MOS transistor M1, and the source S of M2 connects a sampling resistor R7.
Described peak current comparator 209 first input ends are connected with sampling resistor R7 electricity by described feedforward resistance R 6, and its second input is connected with the output electricity of described reference voltage source ref1, and its output is coupled to the grid G of the second MOS transistor M2.Described peak current comparator 209, for by the voltage threshold comparison of the voltage magnitude sum of described feedforward resistance R 6 and sampling resistor R7 and described reference voltage source ref1, is controlled the conducting of described the second MOS transistor M2 and closes; If the voltage magnitude sum of R6 and R7 reaches the voltage threshold of reference voltage source ref1, peak current comparator 209 output upsets, close the second MOS transistor M2.
As preferred embodiment, described controllable silicon light modulation LED drive circuit further comprise one maximum service time timer 207, one or gate 208 and a rest-set flip-flop 205.
Described maximum service time timer one end of 207 respectively electricity is connected to the grid G of output Q and the second MOS transistor M2 of described rest-set flip-flop 205, described maximum service time timer 207 other end electricity be connected to an input of described or gate 208; Another input electricity described or gate 208 is connected to the output of described peak current comparator 209, and output electricity described or gate 208 is connected to the reset terminal R of described rest-set flip-flop 205.When the electric current of described the second MOS transistor M2 makes the output upset of described peak current comparator 209, or the service time that described maximum service time timer 207 detects described the second MOS transistor M2 is while reaching Preset Time, described or gate 208 output signals reset described rest-set flip-flop 205, thereby close described the second MOS transistor M2.Also,, in a power frequency period, when Vbus voltage is higher, peak current comparator 209 determines the shutoff moment of the second MOS transistor M2; When Vbus voltage is lower, maximum service time timer 207 determines the shutoff moment of the second MOS transistor M2.
As preferred embodiment, described controllable silicon light modulation LED drive circuit further comprises a demagnetization detector 204; The input of described demagnetization detector 204 is connected with the source S electricity of described power switch MOS transistor M1, and its output electricity connects the set end S of described rest-set flip-flop 205.Described demagnetization detector 204 changes for detection of the source voltage of described power switch MOS transistor M1, and output signal makes described rest-set flip-flop 205 set, thereby opens described the second MOS transistor M2.
As optional execution mode, described controllable silicon light modulation LED drive circuit further comprises a switch drive module 206, it is serially connected between the output Q and the second MOS transistor M2 grid of rest-set flip-flop 205, and with maximum service time timer 207 electricity is connected (when circuit does not arrange maximum service time timer 207, switch drive module 206 is connected with the output electricity of peak current comparator 209).Switch drive module 206, according to the output signal of rest-set flip-flop 205, closes or conducting the second MOS transistor M2.
With reference to figure 3, the schematic diagram of voltage-dropping type controllable silicon light modulation LED drive system described in the utility model.Described controllable silicon light modulation LED drive system comprises a controllable silicon dimmer 202, a rectifier bridge 203, a bus capacitor C1, a sampling resistor R7 and controllable silicon light modulation LED drive circuit described in the utility model (as shown in Figure 2 circuit, same components symbol represents same or similar assembly).
Described controllable silicon dimmer 202 with exchange input source 201 electricity and be connected, by adjusting the brightness of himself angle of flow control LED load; Described rectifier bridge 203 is respectively with described controllable silicon dimmer 202 and exchange input source 201 electricity and is connected, for being that an amplitude is positive voltage signal Vbus by the sinusoidal signal rectification of interchange input source 201; Described bus capacitor C1 is coupled to two outputs of described rectifier bridge 203 and is connected with the drain D electricity of a power switch MOS transistor M1, is used to described power switch MOS transistor M1 that high-frequency current path is provided; The input of described high-high brightness hoisting module 21 is connected with the drain D electricity of described bus capacitor C1 and described power switch MOS transistor M1 respectively; The drain D of described the second MOS transistor M2 is connected with the source S electricity of described power switch MOS transistor M1, and the source S of described the second MOS transistor M2 is connected with described sampling resistor R7 electricity; Described peak current comparator 209 first input ends are connected with described sampling resistor R7 electricity by described feedforward resistance R 6; Described sampling resistor R7 is connected to LED load by inductance L 1 electricity.
The grid G of power switch MOS transistor M1 is further coupled between the supplying resistance R1 and power supply capacitor C 2 of series connection, simultaneously by a voltage stabilizing didoe ZD1 ground connection.The further electricity in one end that sampling resistor R7 and inductance L 1 are joined is connected to the negative electrode of a sustained diode 1, the negative terminal of the anodic bonding bus capacitor C1 of sustained diode 1.LED load two ends also meet an output capacitance C4.In other embodiments, described sampling resistor R7 also can be connected to LED load by a transformer electricity.
As preferred embodiment, described controllable silicon light modulation LED drive circuit further comprise one maximum service time timer 207, one or gate 208 and a rest-set flip-flop 205; Described maximum service time timer one end of 207 respectively electricity is connected to the grid G of output Q and the second MOS transistor M2 of described rest-set flip-flop 205, described maximum service time timer 207 other end electricity be connected to an input of described or gate 208; Another input electricity described or gate 208 is connected to the output of described peak current comparator 209, and output electricity described or gate 208 is connected to the reset terminal R of described rest-set flip-flop 205.When the electric current of described the second MOS transistor M2 makes the output upset of described peak current comparator 209, or the service time that described maximum service time timer 207 detects described the second MOS transistor M2 is while reaching Preset Time, described or gate 208 output signals reset described rest-set flip-flop 205, thereby close described the second MOS transistor M2.
As preferred embodiment, described controllable silicon light modulation LED drive circuit further comprises a demagnetization detector 204; The input of described demagnetization detector 204 is connected with the source S electricity of described power switch MOS transistor M1, the set end S of rest-set flip-flop 205 described in its output termination.Described demagnetization detector 204 changes for detection of the source voltage of described power switch MOS transistor M1, and output signal makes described rest-set flip-flop 205 set, thereby opens described the second MOS transistor M2.
As optional execution mode, described controllable silicon light modulation LED drive circuit further comprises a switch drive module 206, it is serially connected between the output Q and the second MOS transistor M2 grid of rest-set flip-flop 205, and with maximum service time timer 207 electricity is connected (when circuit does not arrange maximum service time timer 207, switch drive module 206 is connected with the output electricity of peak current comparator 209).Switch drive module 206, according to the output signal of rest-set flip-flop 205, closes or conducting the second MOS transistor M2.
LED drive circuit of the present utility model is used source class type of drive.Electric current on sampling resistor R7 has reflected the electric current on the second MOS transistor M2.Voltage on sampling resistor R7 is CS signal, and CS signal is connected to the first input end of peak current comparator 209 by feedforward resistance R 6 electricity.When the second MOS transistor M2 opens, also conducting of power switch MOS transistor M1; Inductance L 1 Current rise, the voltage on sampling resistor R7 also rises; When the voltage on sampling resistor R7 and feedforward resistance R 6 voltage sums reach reference voltage ref1 threshold values, the output upset of peak current comparator 209, or gate 208 output signals reset rest-set flip-flop 205, switch drive module 206 output signals are closed the second MOS transistor M2.M2 closes power switch MOS transistor M1 simultaneously and also closes, and sustained diode 1 starts conducting simultaneously, and inductance L 1 electric current starts to decline; When the electric current of inductance L 1 drops to zero, the drain voltage of power switch MOS transistor M1 also starts to decline; Due to the capacitive coupling effect of M1 drain electrode and source electrode, the source voltage of M1 also starts to decline simultaneously; Source voltage variation output signal that the detector 204 that now demagnetizes detects M1 make rest-set flip-flop 205 set, and driving switch driver module 206 makes the second MOS transistor M2 again open-minded.The service time of maximum service time timer 207 detection the second MOS transistor M2; When the service time of M2 is greater than systemic presupposition threshold values, output signal to or gate 208, rest-set flip-flop 205 is resetted, driving switch driver module 206 is closed the second MOS transistor M2.Also in a power frequency period, when Vbus voltage is higher, the shutoff that peak current comparator 209 determines the second MOS transistor M2 constantly; When Vbus voltage is lower, maximum service time timer 207 determines the shutoff moment of the second MOS transistor M2.
Below in conjunction with accompanying drawing 3-5, the operation principle of voltage-dropping type controllable silicon light modulation LED drive system described in the utility model is described.
With reference to figure 4, the work typical waveform figure of voltage-dropping type controllable silicon light modulation LED drive system described in the utility model, wherein solid line is the circuit working waveform while not connecing controllable silicon dimmer 202, dotted line is the circuit working waveform while connecing controllable silicon dimmer 202.
In conjunction with Fig. 3, Fig. 4, when not connecing controllable silicon dimmer 202, the mean value of Vbus voltage is higher, and the voltage signal mean value after upper divider resistance R2 and lower divider resistance R3 processing is also higher; This voltage signal obtains a d. c. voltage signal Vdim after resistance R 4 and filter capacitor C3 after filtering, and same, when not connecing controllable silicon dimmer 202, this d. c. voltage signal Vdim is also higher.Operational amplifier 210 is controlled the conduction impedance of the first MOS transistor M3, guarantee that two input terminal voltages equate, thereby input resistance R5 two ends can obtain a voltage during operational amplifier 210 closed loop work, and this voltage is Vdim-Vref2.The upper generation current of input resistance R5, its size is (Vdim-Vref2)/R5; This electric current first MOS transistor M3 that flows through, and be injected into the input of peak current comparator 209.Because the input impedance of peak current comparator 209 is very high, this electric current is all flowed through and is feedovered resistance R 6 and on R6, produce a DC offset voltage, and this DC offset voltage is added on CS voltage, makes the peak value V of CS voltage
cS_THreduce, the peak current of inductance L 1 reduces, thereby output current is reduced.
When connecing controllable silicon dimmer 202, if the maximum conduction angle degree of controllable silicon dimmer 202 is lower, the mean value of Vbus voltage is also lower, as shown in Fig. 3 dotted line.The d. c. voltage signal Vdim that this voltage signal obtains after upper divider resistance R2, lower divider resistance R3, filter resistance R4 and filter capacitor C3 process is also lower; Thereby the voltage Vdim-Vref2 at input resistance R5 two ends is also lower; Electric current on input resistance R5 is flowed through the first MOS transistor M3 to the resistance R 6 that feedovers, and the DC offset voltage producing on R6 is also lower, makes the peak value V of CS voltage
cS_THhigher, the peak current of inductance is improved.Thereby the maximum output current ratio that the maximum output current while making circuit connect controllable silicon dimmer accounts for while not connecing controllable silicon dimmer improves.
When the angle of flow of controllable silicon dimmer 202 continues to reduce, Vdim voltage signal can continue to decline, until be less than Vref2 voltage, now, operational amplifier 210 cannot continue closed loop work, and the first MOS transistor M3 closes, on input resistance R5, do not have electric current to flow through, in feedforward resistance R 6, also do not have electric current to flow through, now feed forward circuit is on inductance L 1 peak current without impact, and the angle of flow of following controllable silicon dimmer of output current linearity changes.
In conjunction with Fig. 3, Fig. 5, wherein Fig. 5 is the Vdim voltage of controllable silicon light modulation LED drive system described in the utility model and the graph of a relation of Vcs crest voltage.When Vdim voltage is during higher than Vref2 voltage, the crest voltage V of Vcs
cS_THdecline, the peak current of inductance L 1 also declines; When Vdim voltage is less than Vref2 voltage, the crest voltage V of Vcs
cS_THremain unchanged, the peak current of inductance L 1 also remains unchanged.
While using controllable silicon dimmer 202 light modulation, controllable silicon dimmer 202 provides dim signal by changing the mode of angle of flow.When controllable silicon dimmer 202 blocking-up input voltage, Vbus voltage is output voltage V out, and inductance L 1 electric current is also zero.When controllable silicon dimmer 202 conducting, Vbus voltage equals input voltage absolute value, and LED drive circuit is normally worked, for LED load provides energy.By changing the angle of flow of controllable silicon dimmer 202, the power of LED load changes, and realizes the object of light modulation.By high-high brightness hoisting module 21, improved maximum current when drive circuit connects controllable silicon dimmer 202; Save leadage circuit simultaneously, the electric current that maintains of controllable silicon dimmer 202 is provided with the input current of switch converters itself, improved LED drive circuit efficiency and system reliability.
Controllable silicon light modulation LED drive circuit described in the utility model can be applied in buck-boost type controllable silicon light modulation LED driving system structure and in flyback controllable silicon light modulation LED driving system structure equally.With reference to figure 6, Fig. 7, wherein Fig. 6 is the schematic diagram of buck-boost type controllable silicon light modulation LED drive system described in the utility model, and Fig. 7 is the schematic diagram of flyback controllable silicon light modulation LED drive system described in the utility model.Wherein, the drive system of voltage-dropping type controllable silicon light modulation LED shown in the drive principle of controllable silicon light modulation LED drive system and control logic and Fig. 3 is similar, does not repeat them here.
The above is only preferred implementation of the present utility model; it should be pointed out that for those skilled in the art, do not departing under the prerequisite of the utility model principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection range of the present utility model.
Claims (10)
1. a high-high brightness hoisting module, is characterized in that, comprising: an operational amplifier, one first MOS transistor and a reference voltage source;
The first input end of described operational amplifier is the input of described high-high brightness hoisting module, in order to receive a sampled voltage signal, its second input is connected with the output electricity of described reference voltage source, its output electricity is connected to the grid of described the first MOS transistor, described operational amplifier is controlled the conduction impedance of described the first MOS transistor, guarantees that two input terminal voltages equate during described operational amplifier closed loop work;
The source electrode electricity of described the first MOS transistor is connected to the first input end of described operational amplifier, and its drain electrode is the output of described high-high brightness hoisting module, and output one current signal is in order to control the output current of a LED drive circuit.
2. high-high brightness hoisting module according to claim 1, is characterized in that, described module further comprises: a voltage division processing unit and a filter unit; Described voltage division processing unit receives outside amplitude to be positive voltage signal and to process; Described filter unit respectively electricity is connected to the first input end of described voltage division processing unit and described operational amplifier, described filter unit, for the voltage signal after described voltage division processing cell processing is carried out to filtering, obtains the first input end that sampled voltage signal exports described operational amplifier to.
3. high-high brightness hoisting module according to claim 2, is characterized in that, described voltage division processing unit comprises on one divider resistance and divider resistance once, and described filter unit comprises a filter resistance and a filter capacitor; It is positive voltage signal that described upper divider resistance one end receives outside amplitude, and the other end is connected with described lower divider resistance electricity, described lower divider resistance other end ground connection; Described filter resistance one end is coupled between described upper divider resistance and lower divider resistance, and the other end respectively electricity is connected to one end of described filter capacitor and the first input end of described operational amplifier, described filter capacitor other end ground connection.
4. high-high brightness hoisting module according to claim 3, is characterized in that, described module further comprises: an input resistance; Described input resistance is serially connected between described filter resistance and the first input end of described operational amplifier, and is connected with the source electrode electricity of described the first MOS transistor, for obtaining dividing potential drop and exporting described the first MOS transistor to.
5. a controllable silicon light modulation LED drive circuit, is characterized in that, comprising: the high-high brightness hoisting module described in one second MOS transistor, a peak current comparator, feedforward resistance, a reference voltage source and claim 1 to 4 any one;
The drain electrode electricity of described the second MOS transistor is connected to the source electrode of a power switch MOS transistor, and the source electrode electricity of described the second MOS transistor connects a sampling resistor;
The output of described high-high brightness hoisting module is connected to described peak current comparator first input end and described feedforward resistance by the drain electrode electricity of described the first MOS transistor, and the current signal of described the first MOS transistor output feedforward resistance of flowing through produces direct current (DC) bias;
Described peak current comparator first input end is connected with sampling resistor electricity by described feedforward resistance, its second input is connected with the output electricity of described reference voltage source, its output is coupled to the grid of described the second MOS transistor, described peak current comparator, for by the voltage threshold comparison of the voltage magnitude sum of described feedforward resistance and sampling resistor and described reference voltage source, is controlled the conducting of described the second MOS transistor and closes.
6. controllable silicon light modulation LED drive circuit according to claim 5, is characterized in that, described circuit further comprise one maximum service time timer, one or gate and a rest-set flip-flop; One end of described maximum service time timer respectively electricity is connected to the output of described rest-set flip-flop and the grid of the second MOS transistor, and the other end electricity of described maximum service time timer is connected to an input of described or gate; Another input electricity described or gate connects the output of described peak current comparator, and output electricity described or gate is connected to the reset terminal of described rest-set flip-flop; When the electric current of described the second MOS transistor makes the output upset of described peak current comparator, or the service time that described maximum service time timer detects described the second MOS transistor is while reaching Preset Time, described or gate output signal resets described rest-set flip-flop, thereby closes described the second MOS transistor.
7. controllable silicon light modulation LED drive circuit according to claim 6, is characterized in that, described circuit further comprises a demagnetization detector; The input of described demagnetization detector is connected with the source electrode electricity of described power switch MOS transistor, its output electricity is connected to the set end of described rest-set flip-flop, described demagnetization detector changes for detection of the source voltage of described power switch MOS transistor, and output signal makes described rest-set flip-flop set, thereby open described the second MOS transistor.
8. a controllable silicon light modulation LED drive system, comprises a controllable silicon dimmer, a rectifier bridge, a bus capacitor and a sampling resistor, it is characterized in that, further comprises controllable silicon light modulation LED drive circuit claimed in claim 5;
Described controllable silicon dimmer and one exchanges input source electricity and is connected, by adjusting the brightness of himself angle of flow control LED load;
Described rectifier bridge is respectively with described controllable silicon dimmer and exchange input source electricity and is connected, for being that an amplitude is positive voltage signal by the sinusoidal signal rectification of interchange input source;
Described bus capacitor is coupled to two outputs of described rectifier bridge and is connected with the drain electrode electricity of a power switch MOS transistor, is used to described power switch MOS transistor that high-frequency current path is provided;
The input of described high-high brightness hoisting module is connected with the drain electrode electricity of described bus capacitor and described power switch MOS transistor respectively;
The drain electrode of described the second MOS transistor is connected with the source electrode electricity of described power switch MOS transistor, and the source electrode of described the second MOS transistor is connected with described sampling resistor electricity;
Described peak current comparator first input end is connected with described sampling resistor electricity by described feedforward resistance;
Described sampling resistor is connected to LED load by a transformer or inductance electricity.
9. controllable silicon light modulation LED drive system according to claim 8, is characterized in that, described controllable silicon light modulation LED drive circuit further comprise one maximum service time timer, one or gate and a rest-set flip-flop; One end of described maximum service time timer respectively electricity is connected to the output of described rest-set flip-flop and the grid of the second MOS transistor, and the other end electricity of described maximum service time timer is connected to an input of described or gate; Another input electricity described or gate is connected to the output of described peak current comparator, and output electricity described or gate is connected to the reset terminal of described rest-set flip-flop; When the electric current of described the second MOS transistor makes the output upset of described peak current comparator, or the service time that described maximum service time timer detects described the second MOS transistor is while reaching Preset Time, described or gate output signal resets described rest-set flip-flop, thereby closes described the second MOS transistor.
10. controllable silicon light modulation LED drive system according to claim 9, is characterized in that, described controllable silicon light modulation LED drive circuit further comprises a demagnetization detector; The input of described demagnetization detector is connected with the source electrode electricity of described power switch MOS transistor, its output electricity is connected to the set end of described rest-set flip-flop, described demagnetization detector changes for detection of the source voltage of described power switch MOS transistor, and output signal makes described rest-set flip-flop set, thereby open described the second MOS transistor.
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| CN201420060480.6U CN203801109U (en) | 2014-02-10 | 2014-02-10 | Maximum brightness enhancing module, silicone controlled rectifier dimming LED driving circuit and silicone controlled rectifier dimming LED driving system |
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| CN201420060480.6U CN203801109U (en) | 2014-02-10 | 2014-02-10 | Maximum brightness enhancing module, silicone controlled rectifier dimming LED driving circuit and silicone controlled rectifier dimming LED driving system |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103796389A (en) * | 2014-02-10 | 2014-05-14 | 上海晶丰明源半导体有限公司 | Largest brightness lifting module and silicon controlled light-dimmer LED driving circuit and system |
| CN104540292A (en) * | 2014-12-31 | 2015-04-22 | 生迪光电科技股份有限公司 | Dimming circuit applicable to silicon-controlled light regulator circuit and dimming system |
| CN106304484A (en) * | 2016-08-22 | 2017-01-04 | 上海晶丰明源半导体有限公司 | Controllable silicon light modulation LED drive power and dimming controlling method thereof |
-
2014
- 2014-02-10 CN CN201420060480.6U patent/CN203801109U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103796389A (en) * | 2014-02-10 | 2014-05-14 | 上海晶丰明源半导体有限公司 | Largest brightness lifting module and silicon controlled light-dimmer LED driving circuit and system |
| CN104540292A (en) * | 2014-12-31 | 2015-04-22 | 生迪光电科技股份有限公司 | Dimming circuit applicable to silicon-controlled light regulator circuit and dimming system |
| CN106304484A (en) * | 2016-08-22 | 2017-01-04 | 上海晶丰明源半导体有限公司 | Controllable silicon light modulation LED drive power and dimming controlling method thereof |
| CN106304484B (en) * | 2016-08-22 | 2018-11-13 | 上海晶丰明源半导体股份有限公司 | Controllable silicon light modulation LED drive power and its dimming controlling method |
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