CN203800010U - Sieve plate and plasma processor having same - Google Patents

Abstract

The utility model discloses a sieve plate and a plasma processor having the same; sieve plate is arranged in a reaction chamber of the plasma processor, and provided with a plurality of section zones mutually independently arranged; the sieve plate of each section zone is uniformly provided with a plurality of air pores; the sieve plate is spliced by the section zones, and the section zones are spliced on a same plane surface. The section zones are spliced, so versatility and interchangeability of the sieve plate can be stronger, thereby reducing cost generated by replacing the sieve plate, so film deposition and etching uniformity of the sieve plate can be partially adjusted and replaced.

Description

A kind of sieve plate and there is the plasma processing apparatus of this sieve plate

Technical field

The utility model relates to a kind of plasma processing apparatus that carries out the sieve plate of gas conveying and have this sieve plate in thin film deposition and Etaching device.

Background technology

In semiconductor and demonstration industry, wafer or the deposition rate of glass substrate upper film or the homogeneity of etch-rate directly have influence on the quality of product, and this standard has been to weigh the very important index of specification of equipment.

Industry is used plasma processing apparatus as shown in Figure 1 at present, for generation of the plasma of reacting gas 600, to substrate 300 deposit, etch process process time, general top in reaction chamber 100 arranges sieve plate 400 ', by the upper multiple pores that distribute of this sieve plate 400 ', the reacting gas of introducing from air inlet pipe 600 is transported to and in reaction chamber 100, carries out subsequent treatment.Pore on existing sieve plate 400 ' is generally the consistent cylindrical hole of upper and lower bore 401.

But above-mentioned sieve plate often can not meet technological requirement, particularly homogeneity is required to the product of extra-high-speed, also require the homogeneity of relevant device (deposition/etching) to there are some special designs and meet technological requirement.The existing solution of industry comprises the sieve plate design that different arch degree or hole equidistantly distribute at present, also can, by adjusting the homogeneity of battery lead plate temperature, also can comprise and carry out technological parameter adjustment (gas pressure, gas flow, cavity temperature, power etc.).But the improvement ability of every kind of scheme has the capabilities limits of autogenous control, sometimes need by considering, just can reach the effect of improving homogeneity, it exists general and exchange performance is low, the defect that replacement cost is higher.

Utility model content

In order to solve the problem of prior art, make universal performance and the exchange performance of sieve plate stronger, reduce and change the cost that sieve plate produces, convenient thin film deposition and etched uniformity to sieve plate carried out local modulation and replacing, and the utility model provides a kind of sieve plate and had the plasma processing apparatus of this sieve plate.

Described technical scheme is as follows:

On the one hand, the utility model provides a kind of sieve plate, and it is arranged in the reaction chamber of plasma processing apparatus, and described sieve plate is provided with multiple subregions, and each by stages arranges independently of one another, on the described sieve plate of each subregion, multiple pores is set; Described sieve plate is spliced by each subregion, and is positioned at same plane after the splicing of each subregion.

The all described pore that is positioned at same subregion is unicity air hole structure, and the each pore in same subregion all has identical throughput.

Described pore is the one in cylindrical hole, cylindroid hole, bellmouth and square hole.

The all described pore that is positioned at same subregion at least arranges two kinds of air hole structures, and in same subregion, the throughput summation of all various pores keeps identical with the throughput summation of the described unicity pore that unicity pore is set in same subregion.

Described pore in each subregion is the combination of at least two kinds in cylindrical hole, cylindroid hole, bellmouth and square hole.

Described sieve plate comprises four subregions, and the pore that is arranged in same subregion in described four subregions is unicity pore, and pore in described four subregions is respectively any of cylindrical hole, cylindroid hole, bellmouth and square hole.

Described sieve plate comprises four subregions, in each subregion in four described subregions, is equipped with two kinds of pores, and pore is respectively the combination of any two kinds in cylindrical hole, cylindroid hole, bellmouth and square hole.

The equivalent diameter of described pore is 0.1 centimetre～10 centimetres; The spacing of the described pore in each subregion is 0.1 centimetre～10 centimetres.

In the adjacent subregion of described sieve plate two, wherein a subregion is provided with the first holding part, and another subregion is provided with the second holding part that two subregions are spliced mutually that matches with described the first holding part.

On the other hand, the utility model also provides a kind of plasma processing apparatus, comprises sieve plate, and described sieve plate is above-mentioned provided sieve-plate structure.

The beneficial effect that the technical scheme that the utility model provides is brought is:

By compared with prior art, the utility model is according to the different situations of original substrate regional processing speed, sieve plate is divided into multiple subregions, and independent setting between each subregion, each subregion is by being spliced to form sieve-plate structure, needing, on the sieve plate subregion that gas flow is large, the pore that bore is larger is set, improve deposition or the etch-rate of substrate corresponding region; And on sieve plate, need the subregion that gas flow is little that the pore that bore is less is set, slow down deposition or the etch-rate of corresponding region on substrate, finally obtain the effect to the each region of substrate uniform treatment, and after homogeneity worsens, again according to rate distribution figure, each subregion of sieve plate can be re-started to independent assortment, or substitute certain original subregion with the subregion of other new customization, thereby can again obtain at short notice desirable homogeneity treatment effect.

Brief description of the drawings

In order to be illustrated more clearly in the technical scheme in the utility model embodiment, below the accompanying drawing of required use during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.

Fig. 1 is existing thin film deposition or etching plasma treatment appts and the structural representation of sieve plate wherein;

Fig. 2 is the thin film deposition of utility model or etching plasma treatment appts and sieve-plate structure schematic diagram wherein;

Fig. 3 is a kind of embodiment that four subregions are set on sieve-plate structure described in utility model, there is shown the corresponding planar structure schematic diagram of offering cylindrical hole on these four subregions;

Fig. 4 is a kind of embodiment that four subregions are set on sieve-plate structure described in utility model, there is shown the corresponding side structure schematic diagram of offering cylindrical hole on these four subregions;

Fig. 5 is a kind of embodiment that four subregions are set on sieve-plate structure described in utility model, there is shown the corresponding structural representation of offering square hole on these four subregions;

Fig. 6 is a kind of embodiment that four subregions are set on sieve-plate structure described in utility model, there is shown the corresponding side structure schematic diagram of offering square hole on these four subregions;

Fig. 7 is the connecting method schematic diagram of sieve plate described in utility model.

In figure:

100-reaction chamber; 200-bottom electrode; 300-substrate; 400 '-sieve plate, 400-sieve plate; 500-top electrode; 600-reacting gas; 401-first kind pore; 402-Equations of The Second Kind pore.

Embodiment

For making the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with accompanying drawing, the utility model execution mode is described in further detail.

As shown in Figure 2, sieve plate 400 described in the utility model is arranged on the top in the reaction chamber 100 of plasma processing apparatus; Bottom in reaction chamber 100 is provided with bottom electrode 200, carries out sticking and fixes being placed on substrate 300 on bottom electrode 200.On sieve plate 400, be distributed and be provided with multiple pores, for reacting gas 600 is delivered in reaction chamber 100, the radio frequency electrode that bottom electrode 200 arranges, after radio-frequency power supply RF is communicated with, be engaged in the interior formation rf electric field of reaction chamber 100 with top electrode 500, thereby the plasma of reaction of formation gas 600 is processed to substrate 300.

As shown in Figure 3, on described sieve plate 400, divide and have four subregions, and on the different subregions of sieve plate 400, offer the pore of different sizes, four subregions independently arrange and form by being stitched together a sieve plate plane, in the adjacent subregion of sieve plate two, wherein a subregion is provided with the first holding part, another subregion is provided with the second holding part that two subregions are spliced mutually that matches with described the first holding part, as the holding part of a subregion is set to groove, the holding part of another subregion is set to protuberance, to realize the splicing of facing mutually two subregions.Being shaped as of first kind pore 401 is cylindrical, Equations of The Second Kind pore 402 be shaped as cylindrical hole, the diameter of the opening of pore is larger, the flow of gas is just larger.Fig. 4 is the cutaway side view of above-mentioned the first embodiment, the pore size of first kind pore 401 is 0.3 centimetre, the pore size of Equations of The Second Kind pore 402 is 1 centimetre, and this gas flow that can ensure sieve plate fringe region is larger, thereby produces higher film deposition rate or etch-rate.

As shown in Figure 5, on described sieve plate 400, divide and have four subregions, and on the different subregions of sieve plate 400, offer the pore of different sizes, first kind pore 401 be shaped as cylindrical hole, being shaped as square hole of Equations of The Second Kind pore 402, the diameter of the opening of pore is larger, and the flow of gas is just larger.Fig. 6 is the cutaway side view of above-mentioned the second embodiment, the pore size of first kind pore 401 is 0.3 centimetre, the length of side size of Equations of The Second Kind pore 402 is 1.5 centimetres, and this gas flow that can ensure sieve plate fringe region is larger, thereby produces higher film deposition rate or etch-rate.

In addition, the pore in every four subregions can also be the combination of at least two kinds in cylindrical hole, cylindroid hole, bellmouth and square hole.Or sieve plate is set to four subregions, and the pore that is arranged in same subregion in four subregions is unicity pore, and pore in four subregions is respectively cylindrical hole, cylindroid hole, bellmouth and square hole; In the time that the gas cell distribution of different cross section shape is in same subregion, need to keep total air-flow throughput to remain unchanged, just repeat no more here.

Be illustrated in figure 7 a kind of connecting method of sieve plate, this connecting method is that each subregion is fitted together by grafting, can ensure that like this subregion of each several part is in same plane, thereby prevent paradoxical discharge.Below be only embodiment, also can comprise other connecting method.

Above-mentioned the utility model embodiment sequence number, just to describing, does not represent the quality of embodiment.

The foregoing is only preferred embodiment of the present utility model, not in order to limit the utility model, all within spirit of the present utility model and principle, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.

Claims (10)

1. a sieve plate, it is arranged in the reaction chamber of plasma processing apparatus, it is characterized in that: described sieve plate is provided with multiple subregions, and each by stages arranges independently of one another, on the described sieve plate of each subregion, multiple pores is set; Described sieve plate is spliced by each subregion, and is positioned at same plane after the splicing of each subregion.

2. sieve plate according to claim 1, is characterized in that:

The all described pore that is positioned at same subregion is unicity air hole structure, and the each pore in same subregion all has identical throughput.

3. sieve plate according to claim 2, is characterized in that:

Described pore is the one in cylindrical hole, cylindroid hole, bellmouth and square hole.

4. Dun sieve plate according to claim 1, is characterized in that:

The all described pore that is positioned at same subregion at least arranges two kinds of air hole structures, and in same subregion, the throughput summation of all various pores keeps identical with the throughput summation of the described unicity pore that unicity pore is set in same subregion.

5. sieve plate according to claim 4, is characterized in that:

Described pore in each subregion is the combination of at least two kinds in cylindrical hole, cylindroid hole, bellmouth and square hole.

6. sieve plate according to claim 1, is characterized in that:

Described sieve plate comprises four subregions, and the pore that is arranged in same subregion in described four subregions is unicity pore, and pore in described four subregions is respectively any of cylindrical hole, cylindroid hole, bellmouth and square hole.

7. sieve plate according to claim 1, is characterized in that:

Described sieve plate comprises four subregions, in each subregion in four described subregions, is equipped with two kinds of pores, and pore is respectively the combination of any two kinds in cylindrical hole, cylindroid hole, bellmouth and square hole.

8. according to the arbitrary described sieve plate of claim 1-7, it is characterized in that:

The equivalent diameter of described pore is 0.1 centimetre～10 centimetres; The spacing of the described pore in each subregion is 0.1 centimetre～10 centimetres.

9. according to the arbitrary described sieve plate of claim 1-7, it is characterized in that:

In the adjacent subregion of described sieve plate two, wherein a subregion is provided with the first holding part, and another subregion is provided with the second holding part that two subregions are spliced mutually that matches with described the first holding part.

10. a plasma processing apparatus, comprises sieve plate, it is characterized in that, described sieve plate is the arbitrary described sieve plate of claim 1-9.