CN203782276U - Polycrystalline silicon ingot surface pretreatment device - Google Patents
Polycrystalline silicon ingot surface pretreatment device Download PDFInfo
- Publication number
- CN203782276U CN203782276U CN201420130759.7U CN201420130759U CN203782276U CN 203782276 U CN203782276 U CN 203782276U CN 201420130759 U CN201420130759 U CN 201420130759U CN 203782276 U CN203782276 U CN 203782276U
- Authority
- CN
- China
- Prior art keywords
- silicon ingot
- pond
- corrosion
- pool
- cuboid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 230000007797 corrosion Effects 0.000 claims abstract description 45
- 238000005260 corrosion Methods 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 239000002253 acid Substances 0.000 claims abstract description 20
- 239000003513 alkali Substances 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000007921 spray Substances 0.000 claims description 13
- 238000002360 preparation method Methods 0.000 claims description 12
- 238000000855 fermentation Methods 0.000 claims description 10
- 230000004151 fermentation Effects 0.000 claims description 10
- 238000000746 purification Methods 0.000 claims description 8
- 239000007788 liquid Substances 0.000 abstract description 9
- 238000004140 cleaning Methods 0.000 abstract description 5
- 239000000428 dust Substances 0.000 abstract description 4
- 235000021190 leftovers Nutrition 0.000 abstract 1
- 238000004064 recycling Methods 0.000 abstract 1
- 238000002791 soaking Methods 0.000 abstract 1
- 238000005507 spraying Methods 0.000 abstract 1
- 230000005587 bubbling Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 238000005266 casting Methods 0.000 description 5
- 239000008399 tap water Substances 0.000 description 4
- 235000020679 tap water Nutrition 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- Silicon Compounds (AREA)
Abstract
The utility model discloses a polycrystalline silicon ingot surface pretreatment device, which is used for solving the problems in the prior art that the environment is seriously polluted by dust as well as the surface cleaning quality and the surface cleaning efficiency are low. The device comprises a corrosion pool (5), an ultrasonic soaking pool (7) and a rinsing and spraying pool (8) which are sequentially arranged on a pretreatment pool bracket (4), wherein a liquid draining pipeline (14) is arranged at the center of the bottom of a cuboid-shaped corrosion pool body (9) of the corrosion pool (5); a liquid draining control valve (15) is arranged on the liquid draining pipeline (14); pool bottom grooves (10) are respectively formed in the bottoms of the left side surface and the right side surface of the cuboid-shaped corrosion pool body (9); electric heaters (11) are arranged in the pool bottom grooves (10); and an acid liquid feeding pipe (12), an alkali liquid feeding pipe (13), a pure water feeding pipe (17) and an compressed air feeding pipe (18) are respectively arranged on the inner side wall of the cuboid-shaped corrosion pool body (9). Thus, the squaring quality of a silicon ingot and the recycling rate of leftovers are improved.
Description
Technical field
The present invention relates to a kind of silicon ingot cleaning device for surface, particularly a kind of automatic device for pre-cleaning of polluted surface of polycrystalline silicon ingot casting.
Background technology
In polycrystalline silicon casting ingot process process, polycrystalline silicon ingot casting surface can be stained with the impurity such as silicon nitride, due to fractional condensation and the diffusion in ingot casting production, partial impurities even can be penetrated into the top layer on polycrystalline silicon ingot casting surface, had influence on the evolution of follow-up silicon ingot, also made the reclamation rate of the scrap stock after evolution reduce simultaneously.Therefore, before evolution, to clear up silicon material surface, its surface and top layer impurities are removed.Prior art is to utilize the method for sandblast or manual polishing to carry out pre-treatment, exists working strength large, and environment dust pollution is serious, and cleaning quality and efficiency is low problem all.
Summary of the invention
The invention provides a kind of polycrystal silicon ingot surface preparation device, solved the environment dust pollution that prior art exists serious, removing surface quality and efficiency is low technical problem all.
The present invention solves above technical problem by the following technical programs:
A kind of polycrystal silicon ingot surface preparation device, comprise transfer gantry guide rail, on transfer gantry guide rail, be provided with transfer gantry, on transfer gantry, be provided with silicon ingot suspender, a side at transfer gantry guide rail is provided with pretreatment pool support, on pretreatment pool support, be disposed with corrosion pond, ultrasonic wave fermentation vat and rinsing spray pond, bottom surface central authorities at the cuboid corrosion pond in corrosion pond body are provided with drain line, in drain line, be provided with discharge opeing control valve, groove at the bottom of the two medial surface bottoms, left and right of cuboid corrosion pond body are provided with pond, in groove at the bottom of pond, be provided with electric heater, in the body of cuboid corrosion pond, be communicated with respectively acid solution input tube, alkali lye input tube, water purification input tube and pressurized air input tube, on the bottom surface of cuboid corrosion pond body, be provided with silicon ingot brace table.
Pond mouth one side in corrosion pond is provided with suction tube.
A polycrystal silicon ingot process for surface preparation, comprises the following steps:
The first step, first startup are arranged on the exhausting system of pond mouth one side in corrosion pond, make suction tube in negative pressure state; With the silicon ingot suspender being loaded on transfer gantry, by preparing pretreated polycrystal silicon ingot, hang on the silicon ingot brace table arranging on the bottom surface of cuboid corrosion pond body;
Second step, close discharge opeing control valve, open alkali lye input tube, by pre-configured concentration, be 80-85 gram/every liter, temperature is that the alkali lye of 50 degrees Celsius is squeezed in corrosion pond, and the alkali lye of squeezing into will flood silicon ingot, then, open pressurized air input tube and electric heater simultaneously, the alkali lye being driven in corrosion pond is heated and bubbling, control alkali liquid temperature at 60-65 degree Celsius, after bubbling soak time 5 hours, open discharge opeing control valve the alkali lye in corrosion pond is drained;
The 3rd step, open water purification input tube, polycrystal silicon ingot is sprayed, spray 1 minute;
The 4th step, close discharge opeing control valve, open acid solution input tube, by pre-configured concentration, be 25%, the acid solution that temperature is room temperature is squeezed in corrosion pond, and the acid solution of squeezing into will be flooded silicon ingot, then, open pressurized air input tube and electric heater simultaneously, the acid solution being driven in corrosion pond is heated and bubbling, control acid liquor temperature at 40-50 degree Celsius, after bubbling soak time 2-4 minute, open discharge opeing control valve the acid solution in corrosion pond is drained;
The 5th step, open water purification input tube, polycrystal silicon ingot is sprayed, spray 1 minute, with the silicon ingot suspender being loaded on transfer gantry, the pretreated polycrystal silicon ingot of preparation is hung in ultrasonic wave fermentation vat;
The 6th step, will in ultrasonic wave fermentation vat, pile clean water, and start ultrasonic generator, soak after 2 minutes, close ultrasonic generator, then the water in ultrasonic wave fermentation vat is drained;
The process of the 7th step, repetition the 6th step 3-5 time;
The silicon ingot suspender that the 8th step, use are loaded on transfer gantry hangs in the pretreated polycrystal silicon ingot of preparation in rinsing spray pond, with tap water, polycrystal silicon ingot is sprayed.
The present invention has realized polluting the automatic processing on silicon ingot surface, has overcome the defect of dust polluting environment in processing, and has improved the evolution quality of silicon ingot and the reclamation rate of rim charge.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is the structural representation in corrosion of the present invention pond 5;
Fig. 3 is the structural representation in direction of overlooking in corrosion of the present invention pond 5.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail:
A kind of polycrystal silicon ingot surface preparation device, comprise transfer gantry guide rail 1, on transfer gantry guide rail 1, be provided with transfer gantry 2, on transfer gantry 2, be provided with silicon ingot suspender 3, a side at transfer gantry guide rail 1 is provided with pretreatment pool support 4, on pretreatment pool support 4, be disposed with corrosion pond 5, ultrasonic wave fermentation vat 7 and rinsing spray pond 8, bottom surface central authorities at the cuboid corrosion pond in corrosion pond 5 body 9 are provided with drain line 14, in drain line 14, be provided with discharge opeing control valve 15, groove 10 at the bottom of the two medial surface bottoms, left and right of cuboid corrosion pond body 9 are provided with pond, in groove at the bottom of pond 10, be provided with electric heater 11, at the cuboid corrosion pond body 9 interior acid solution input tubes 12 that are communicated with respectively, alkali lye input tube 13, water purification input tube 17 and pressurized air input tube 18, on the bottom surface of cuboid corrosion pond body 9, be provided with silicon ingot brace table 16.
Pond mouth one side in corrosion pond 5 is provided with suction tube 6.
A polycrystal silicon ingot process for surface preparation, comprises the following steps:
The first step, first startup are arranged on the exhausting system of pond mouth one side in corrosion pond 5, make suction tube 6 in negative pressure state; With the silicon ingot suspender 3 being loaded on transfer gantry 2, by preparing pretreated polycrystal silicon ingot, hang on the silicon ingot brace table 16 arranging on the bottom surface of cuboid corrosion pond body 9;
Second step, close discharge opeing control valve 15, open alkali lye input tube 13, by pre-configured concentration, be 80-85 gram/every liter, temperature is that the alkali lye of 50 degrees Celsius is squeezed in corrosion pond 5, and the alkali lye of squeezing into will flood silicon ingot, then, open pressurized air input tube 18 and electric heater 11 simultaneously, the alkali lye being driven in corrosion pond 5 is heated and bubbling, control alkali liquid temperature at 60-65 degree Celsius, after bubbling soak time 5 hours, open discharge opeing control valve 15 alkali lye in corrosion pond 5 is drained;
The 3rd step, open water purification input tube 17, polycrystal silicon ingot is sprayed, spray 1 minute;
The 4th step, close discharge opeing control valve 15, open acid solution input tube 12, by pre-configured concentration, be 25%, the acid solution that temperature is room temperature is squeezed in corrosion pond 5, and the acid solution of squeezing into will be flooded silicon ingot, then, open pressurized air input tube 18 and electric heater 11 simultaneously, the acid solution being driven in corrosion pond 5 is heated and bubbling, control acid liquor temperature at 40-50 degree Celsius, after bubbling soak time 2-4 minute, open discharge opeing control valve 15 acid solution in corrosion pond 5 is drained;
The 5th step, open water purification input tube 17, polycrystal silicon ingot is sprayed, spray 1 minute, with the silicon ingot suspender 3 being loaded on transfer gantry 2, the pretreated polycrystal silicon ingot of preparation is hung in ultrasonic wave fermentation vat 7;
The 6th step, will in ultrasonic wave fermentation vat 7, pile clean water, and start ultrasonic generator, soak after 2 minutes, close ultrasonic generator, then the water in ultrasonic wave fermentation vat 7 is drained;
The process of the 7th step, repetition the 6th step 3-5 time;
The silicon ingot suspender 3 that the 8th step, use are loaded on transfer gantry 2 hangs in the pretreated polycrystal silicon ingot of preparation in rinsing spray pond 8, with tap water, polycrystal silicon ingot is sprayed.
Transfer gantry 2 of the present invention can left and right to-and-fro movement on transfer gantry guide rail 1, and silicon ingot suspender 3 moves up and down, to complete the transhipment task of silicon ingot.On corrosion of the present invention pond 5, be provided with dividually separately acid solution, alkali lye, water purification spray pipeline, and acid, alkali pipe valve is in interlocking state, forbids the state that occurs that soda acid valve is opened simultaneously.Corrosion is provided with electric heater 11 and bubbling device in pond 5, reaction dynamics and uniformity coefficient that enhance liquid is cleaned.Ultrasonic generator and bubbling device are housed in ultrasonic wave fermentation vat 7, inlet valve and water level gauge are housed, with immersion process, dilute remaining acid & alkali liquid, soak and use tap water, every ingot need be changed several times.Rinsing spray pond 8 is used tap water to spray, and its tapping valve is in normally open, and another rinsing spray groove is cut water device.
Claims (2)
1. a polycrystal silicon ingot surface preparation device, comprise transfer gantry guide rail (1), on transfer gantry guide rail (1), be provided with transfer gantry (2), on transfer gantry (2), be provided with silicon ingot suspender (3), a side at transfer gantry guide rail (1) is provided with pretreatment pool support (4), on pretreatment pool support (4), be disposed with corrosion pond (5), ultrasonic wave fermentation vat (7) and rinsing spray pond (8), it is characterized in that, the bottom surface central authorities that cuboid in corrosion pond (5) corrodes pond body (9) are provided with drain line (14), in drain line (14), be provided with discharge opeing control valve (15), groove (10) at the bottom of the two medial surface bottoms, left and right of cuboid corrosion pond body (9) are provided with pond, in groove at the bottom of pond (10), be provided with electric heater (11), in cuboid corrosion pond body (9), be communicated with respectively acid solution input tube (12), alkali lye input tube (13), water purification input tube (17) and pressurized air input tube (18), on the bottom surface of cuboid corrosion pond body (9), be provided with silicon ingot brace table (16).
2. a kind of polycrystal silicon ingot surface preparation device according to claim 1, is characterized in that, pond mouth one side in corrosion pond (5) is provided with suction tube (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420130759.7U CN203782276U (en) | 2014-03-23 | 2014-03-23 | Polycrystalline silicon ingot surface pretreatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420130759.7U CN203782276U (en) | 2014-03-23 | 2014-03-23 | Polycrystalline silicon ingot surface pretreatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203782276U true CN203782276U (en) | 2014-08-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420130759.7U Expired - Lifetime CN203782276U (en) | 2014-03-23 | 2014-03-23 | Polycrystalline silicon ingot surface pretreatment device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203782276U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103866397A (en) * | 2014-03-23 | 2014-06-18 | 山西中电科新能源技术有限公司 | Surface pretreatment device for polycrystalline silicon ingot and treatment method thereof |
-
2014
- 2014-03-23 CN CN201420130759.7U patent/CN203782276U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103866397A (en) * | 2014-03-23 | 2014-06-18 | 山西中电科新能源技术有限公司 | Surface pretreatment device for polycrystalline silicon ingot and treatment method thereof |
| CN103866397B (en) * | 2014-03-23 | 2016-03-30 | 山西中电科新能源技术有限公司 | Polycrystal silicon ingot surface pretreatment device and treatment process thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140820 |