CN203759661U - Touch panel with optical matching layer structure - Google Patents
Touch panel with optical matching layer structure Download PDFInfo
- Publication number
- CN203759661U CN203759661U CN201320891240.6U CN201320891240U CN203759661U CN 203759661 U CN203759661 U CN 203759661U CN 201320891240 U CN201320891240 U CN 201320891240U CN 203759661 U CN203759661 U CN 203759661U
- Authority
- CN
- China
- Prior art keywords
- layer
- optical match
- contact panel
- layer structure
- patterned electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The utility model discloses a touch panel with an optical matching layer structure, wherein the optical matching layer structure is mainly composed of a SiNx layer and a SiOx layer, so that a film-plating machine used for forming the optical matching layer is characterized in that a single Si target (Si-Al target or Si-B target) is erected in a film-plating cavity, a specific gas is introduced and then the reaction starts so as to form the SiNx layer or the SiOx layer. During the process of preparing the optical matching layer, the erected Si target is utilized and the target is not exchanged, so that the use ratio of the film-plating machine is increased, the capacity is greatly increased, the target configuration is minimal, the purpose of increasing the preparing capacity of the optical matching layer is lastly achieved, the material cost and the material control cost of the optical matching layer are reduced and the yield of the optical matching layer is increased.
Description
Technical field
The utility model relates to contact panel, refers to especially a kind of contact panel of tool optical match layer structure.
Background technology
General contact panel (Touch panel) all at least comprises a substrate, in structural design is located at the patterned electrodes of this substrate, for reducing the transparent electrode pattern significant degree of this contact panel and promoting light transmission, an optical match layer can be set on this patterned electrodes; But this optical match layer still has the following defect that must improve immediately on processing procedure:
One, this optical match layer is to be mainly main by niobium oxide (NbOx) layer in conjunction with Si oxide (SiOx) layer at present, therefore, the film coating equipment that this optical match layer uses in the time being shaped, on it, must set up niobium (Nb) target (or niobium oxide (NbOx) target) and silicon (Si) target simultaneously, form this optical match layer to pass into reacting gas, but, in the time carrying out Si oxide (SiOx) layer processing procedure, setting up niobium (Nb) target (or niobium oxide (NbOx) target) position cannot use, cause operation Si oxide (SiOx) layer processing procedure production capacity to decline, same, in the time carrying out niobium oxide (NbOx) layer processing procedure, setting up silicon (Si) target position cannot use, cause operation niobium oxide (NbOx) layer processing procedure production capacity to decline, use and highlight the defect of this optical match layer in processing procedure production capacity deficiency.
Two, the material cost of niobium (Nb) target or niobium oxide (NbOx) target is higher than the material cost of silicon (Si) target, cause this contact panel (Touch panel) to increase at the cost of this optical match layer that is shaped, and two kinds of targets of management and control (being niobium (Nb) target (or niobium oxide (NbOx) target) and silicon (Si) target), cause the management and control of raw material comparatively difficult simultaneously.
Three, the layer light refractive index of the niobium oxide (NbOx) in this optical match layer (n) value is higher, normally be greater than 2, and thickness is very huge on the collocation impact of this optical match layer, therefore need being controlled at, board film thickness uniformity is less than 5% or 3%, the too small stability control of processing procedure scope is difficult for, and highlights the defect that yield is lower.
Therefore, need to develop a kind of contact panel of tool optical match layer structure.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of contact panel of tool optical match layer structure and the manufacturing process of this optical match layer, mainly promotes the processing procedure production capacity of this optical match layer.
Another technical matters to be solved in the utility model is to provide a kind of contact panel of tool optical match layer structure and the manufacturing process of this optical match layer, mainly reduces material cost and the raw material management and control cost of this optical match layer.
The technical matters that the utility model also will solve is to provide a kind of contact panel of tool optical match layer structure and the manufacturing process of this optical match layer, mainly promotes the yield of this optical match layer.
For addressing the above problem, the utility model provides a kind of contact panel of tool optical match layer structure, comprises: a substrate; One patterned electrodes, is arranged on this substrate; An and optical match layer structure, be arranged between this substrate and this patterned electrodes, wherein this optical match layer comprises: a first film layer, is formed in this substrate, and has a first surface and that is formed in this substrate surface and be in reverse to the second surface of this first surface; One second thin layer, is formed in this first film layer, and has the 4th surface that the 3rd surface and that is formed in this second surface is in reverse to the 3rd surface and is shaped for this patterned electrodes.
Preferably, more comprise a protective seam, be arranged on this patterned electrodes and at least partly cover this patterned electrodes.
Preferably, this patterned electricity has multiple the first axial electrode and multiple the second axial electrode with those the first axial electrode insulation.
Preferably, respectively this first axial electrode comprises multiple electrode parts and is electrically connected adjacent electrode portion and the corresponding respectively bridge part of this second axial electrode, this bridge part and be respectively provided with an insulation course between this second axial electrode.
Preferably, more comprise at least one side that multiple wires and multiple peripheral wiring are positioned at this patterned electrodes, wherein respectively this wire is electrically connected with each this peripheral wiring, and respectively this first axial electrode and each this second axial electrode are electrically connected via each this wire and each this peripheral wiring respectively.
Preferably, more comprise a protective seam, be arranged at the 4th surface of this second thin layer and cover this patterned electrodes, this wire and this peripheral wiring, wherein this protective seam has at least one contact openings and at least this peripheral wiring of expose portion of this contact openings.
Preferably, more comprise a decorative layer, be arranged between the first surface of this first film layer and the surface of this substrate, this decorative layer is positioned at least one side of this contact panel periphery and at least to should wire and the configuration of this peripheral wiring.
Preferably, this patterned electrodes and this peripheral wiring are same conductive.
Preferably, this wire and this peripheral wiring are same conductive.
Preferably, this patterned electrodes, this wire and this peripheral wiring are same conductive.
Preferably, the refractive index of this first film layer is greater than the refractive index of this second thin layer.
Preferably, this the first film layer is a silicon nitride (SiNx) layer, this second thin layer is a Si oxide (SiOx) layer, and the refractive index (n) of this silicon nitride (SiNx) layer is worth between 1.75 to 1.95, the refractive index (n) of this Si oxide (SiOx) layer is worth between 1.55 to 1.42.
Secondly,, for addressing the above problem, the utility model provides a kind of contact panel of tool optical match layer structure, comprises: a substrate; One patterned electrodes, is arranged on this substrate; An and optical match layer structure, be arranged at this substrate, and this patterned electrodes is between this optical match layer structure and this substrate, wherein this optical match layer comprises: a first film layer, be formed in this substrate and coated this patterned electrodes, and there is the 3rd surface that a first surface, that is formed in this substrate surface is in reverse to second surface and this first surface of connection of this first surface and is formed in this patterned electrodes surface; One second thin layer, is formed in this first film layer, and has the 4th surface and that is formed in this second surface and be in reverse to the 5th surface on the 4th surface.
Preferably, this patterned electricity has multiple the first axial electrode and multiple the second axial electrode with those the first axial electrode insulation.
Preferably, respectively this first axial electrode comprises multiple electrode parts and is electrically connected adjacent electrode portion and the corresponding respectively bridge part of this second axial electrode, this bridge part and be respectively provided with an insulation course between this second axial electrode.
Preferably, more comprise a protective seam, be arranged at the 5th surface of this second thin layer and at least to should insulation course.
Preferably, more comprise at least one side that multiple wires and multiple peripheral wiring are positioned at this patterned electrodes, wherein respectively this wire is electrically connected with each this peripheral wiring, and respectively this first axial electrode and each this second axial electrode are electrically connected via each this wire and each this peripheral wiring respectively.
Preferably, this first film layer and this second thin layer cover this substrate, and this first film layer and this second thin layer respectively have at least one opening, and at least this peripheral wiring of expose portion of this opening.
Preferably, more comprise a protective seam, be arranged at the 5th surface of this second thin layer and cover this substrate, this protective seam has at least one contact openings, and at least this peripheral wiring of expose portion of this contact openings.
Preferably, more comprise a decorative layer, be arranged between the first surface of this first film layer and the surface of this substrate, this decorative layer is positioned at least one side of this contact panel periphery and at least to should wire and the configuration of this peripheral wiring.
Preferably, this patterned electrodes part covers this decorative layer.
Preferably, this insulation course is at least disposed between patterned electrodes and this decorative layer.
Preferably, this patterned electrodes and this peripheral wiring are same conductive.
Preferably, this wire and this peripheral wiring are same conductive.
Preferably, this patterned electrodes, this wire and this peripheral wiring are same conductive.
Preferably, the refractive index of this first film layer is less than the refractive index of this second thin layer.
Preferably, this the first film layer is a Si oxide (SiOx) layer, this second thin layer is a silicon nitride (SiNx) layer, and the refractive index (n) of this silicon nitride (SiNx) layer is worth between 1.75 to 1.95, the refractive index (n) of this Si oxide (SiOx) layer is worth between 1.55 to 1.42.
Finally, for addressing the above problem, the manufacturing process of the optical match layer of a kind of contact panel that the utility model provides, be included in silicon (Si) target, silicon-aluminium (Si-Al) target or silicon-boron (Si-B) target are set in a plated film cavity, and cooperation passes into argon (Ar) gas and oxygen (O2) gas, use reaction and form a Si oxide (SiOx) layer, pass into argon (Ar) gas and nitrogen (N2) gas, use silicon nitride (SiNx) layer of reaction formation one and the combination of this Si oxide (SiOx) layer.
Preferably, control the flow of this oxygen (O2) gas between 50 to 300, make refractive index (n) value of this Si oxide (SiOx) layer between 1.85 to 1.42.
Preferably, refractive index (n) value of controlling this Si oxide (SiOx) layer is between 1.55 to 1.42.
Preferably, control the flow of this nitrogen (N2) gas between 150 to 480, make refractive index (n) value of this silicon nitride (SiNx) layer between 1.66 to 1.95.
Preferably, refractive index (n) value of controlling this silicon nitride (SiNx) layer is between 1.75 to 1.95.
Brief description of the drawings
Fig. 1 is the schematic diagram of the utility model the first embodiment, the structural configuration of display optical matching layer.
Fig. 2 is the manufacturing process schematic diagram of the utility model the first embodiment.
Fig. 3 A is the curve map of the utility model the first embodiment, shows the variation of refractive index (n) value of oxygen (O2) gas flow to Si oxide (SiOx) layer.
Fig. 3 B is the curve map of the utility model the first embodiment, shows the variation of refractive index (n) value of nitrogen (N2) gas flow to silicon nitride (SiNx) layer.
Fig. 4 is the schematic diagram of the utility model the second embodiment, the structural configuration of display optical matching layer.
Fig. 5 is the manufacturing process schematic diagram of the utility model the second embodiment.
Fig. 6 is the top view of the utility model the 3rd embodiment, shows configuration state of the present utility model.
Fig. 7 is the sectional view of the utility model the 3rd embodiment, shows configuration state of the present utility model.
Fig. 8 is the sectional view of the utility model the 3rd embodiment, shows another kind of configuration state of the present utility model.
Fig. 9 is the sectional view of the utility model the 4th embodiment, shows configuration state of the present utility model.
Figure 10 is the sectional view of the utility model the 4th embodiment, shows another kind of configuration state of the present utility model.
Figure 11 is the sectional view of the utility model the 4th embodiment, shows another configuration state of the present utility model.
Figure 12 is the sectional view of the utility model the 4th embodiment, shows a kind of configuration state of the present utility model time.
Description of reference numerals
The 10th, substrate
The 11st, surface
The 20th, patterned electrodes
21 is first axial electrode
The 211st, electrode part
The 212nd, bridge part
212 is second axial electrode 22
The 30th, silicon nitride (SiNx) layer
31 is first silicon nitride surface
32 is second silicon nitride surface
The 33rd, opening
The 40th, Si oxide (SiOx) layer
41 is first Si oxide surfaces
42 is second Si oxide surfaces
43 is the 3rd Si oxide surfaces
The 44th, opening
The 50th, protective seam
The 51st, contact openings
The 60th, insulation course
The 71st, wire
The 72nd, peripheral wiring
The 80th, decorative layer
The 91st, plated film cavity
The 92nd, silicon (Si) target
The 93rd, argon (Ar) gas
The 94th, nitrogen (N2) gas
The 95th, oxygen (O2) gas
Embodiment
Consult shown in Fig. 1, the contact panel of a kind of tool optical match layer structure that the utility model the first embodiment provides, it is mainly made up of a substrate 10, a patterned electrodes 20 and an optical match layer, wherein:
This substrate 10, has a surface 11.
This patterned electrodes 20, is arranged on this substrate 10.
This optical match layer structure, be arranged between this substrate 10 and this patterned electrodes 20, wherein this optical match layer comprises a first film layer and one second thin layer, and the refractive index of this first film layer is greater than the refractive index of this second thin layer, what need first illustrate is, in the present embodiment, this first film layer is silicon nitride (SiNx) layer 30, and first of corresponding described the first film layer, two surfaces are first, two silicon nitride surface 31, 32, this second thin layer is Si oxide (SiOx) layer 40, and the 3rd of corresponding the second described thin layer, four surfaces are first, two Si oxide surfaces 41, 42, wherein:
This silicon nitride (SiNx) layer 30, is formed in this substrate 10, and has first silicon nitride surface 31 and that is formed in these substrate 10 surfaces 11 and be in reverse to the second silicon nitride surface 32 of this first silicon nitride surface 31.
This Si oxide (SiOx) layer 40, be formed in this silicon nitride (SiNx) layer 30, and there is the second Si oxide surface 42 that a first Si oxide surface 41 and that is formed in this second silicon nitride surface 32 is in reverse to this first Si oxide surface 41 and is shaped for this patterned electrodes 20; In the present embodiment, this second Si oxide surface 42 covers protective seam 50 formed therebies of this patterned electrodes 20 simultaneously at least partly for this patterned electrodes 20 and.
The above is the each primary structure explanation of the utility model the first embodiment.Make the following instructions as for manufacturing process of the present utility model and effect.
Consult shown in Fig. 2, the manufacturing process of the optical match layer of this contact panel, be included in interior three silicon (Si) target 92 that arranges of a plated film cavity 91 and (also can be silicon-aluminium (Si-Al) target, or silicon-boron (Si-B) target), an and corresponding silicon (Si) target 92 wherein and pass into argon (Ar) gas 93 and nitrogen (N2) gas 94, use reaction and form this silicon nitride (SiNx) layer 30, corresponding two silicon (Si) target 92 wherein and coordinate and pass into argon (Ar) gas 93 and oxygen (O2) gas 95, use this Si oxide (SiOx) layer 40 of reaction formation one and 30 combination of this silicon nitride (SiNx) layer.
Consult shown in Fig. 3 A, oxygen (O2) gas flow that for example ought pass into is more, refractive index (n) value of this Si oxide (SiOx) layer is less, in the present embodiment, be that the flow of control this oxygen (O2) gas is between 50 to 300, make refractive index (n) value of this Si oxide (SiOx) layer between 1.85 to 1.42, and the best be control this Si oxide (SiOx) layer refractive index (n) value between 1.55 to 1.42, but do not limit in this way and be limited, also can be by the temperature of controlling plated film, the parameter such as power or voltage reaches the mode that different refractivity changes of adjusting.
Consult shown in Fig. 3 B, when the nitrogen passing into (N2) gas flow more, refractive index (n) value of this silicon nitride (SiNx) layer is larger, in the present embodiment, be that the flow of control this nitrogen (N2) gas is between 150 to 480, make refractive index (n) value of this silicon nitride (SiNx) layer between 1.66 to 1.95, and the best be control this silicon nitride (SiNx) layer refractive index (n) value between 1.75 to 1.95, but do not limit in this way and be limited, also can be by the temperature of controlling plated film, the parameter such as power or voltage reaches the mode that different refractivity changes of adjusting.
Accordingly, because optical match layer of the present utility model is mainly made up of silicon nitride (SiNx) layer 30 and 40, Si oxide (SiOx) layer, therefore, the film coating equipment that this optical match layer uses in the time being shaped, it only needs to set up single kind of silicon (Si) target 92 in plated film cavity 91 (also can set up silicon-aluminium (Si-Al) target certainly, or silicon-boron (Si-B) target), and can react be shaped this silicon nitride (SiNx) layer 30 or Si oxide (SiOx) layer 40 after passing into specific gas, be with, on the processing procedure of this optical match layer, this silicon (Si) target 92 setting up all can be utilized, and do not need to change material, use and promote film coating equipment utilization factor, production capacity maximization and target configuration are minimized, finally reach the object that promotes this optical match layer processing procedure production capacity.
In addition, the utility model more can reach following purpose and effect.
One, silicon (Si) target 92 (or silicon-aluminium (Si-Al) target using due to optical match layer of the present utility model, or silicon-boron (Si-B) target) the cost of material is low for niobium (Nb) target that uses compared with ordinary optical matching layer of cost and niobium oxide (NbOx) target (estimate can lower than 30%), therefore, the shaping cost of optical match layer of the present utility model is lower, and must management and control single target material (be only silicon (Si) target, silicon-aluminium (Si-Al) target, or silicon-boron (Si-B) target), reach and reduce the material cost of this optical match layer and the object of raw material management and control cost.
They are two years old, because the light refractive index (n) of silicon nitride (SiNx) layer 30 in optical match layer of the present utility model and Si oxide (SiOx) layer 40 is worth lower than the niobium oxide in ordinary optical matching layer (NbOx) layer light refractive index (n) value, therefore, the utility model can by light refractive index (n) the value regulation and control of this silicon nitride (SiNx) layer 30 this 1.75～1.95, and collocation regulates and controls light refractive index (n) value of Si oxide (SiOx) layer 40 1.42～1.55, film thickness uniformity is controlled at be less than 10% to reach this optical match layer effects of demand, therefore the utility model processing procedure scope is more easy to control greatly, really reach the object that promotes this optical match layer yield.
Consult shown in Fig. 4,5, the contact panel of a kind of tool optical match layer structure that the utility model the second embodiment provides, it is made up of a substrate 10, a patterned electrodes 20 and an optical match layer equally, because its effect, object and manufacturing process are same as the first embodiment, therefore repeat no more, be as for the second embodiment difference:
This optical match layer structure, be arranged at this substrate 10, and this patterned electrodes 20 is between this optical match layer structure and this substrate 10, wherein this optical match layer is mainly made up of a first film layer and one second thin layer, and the refractive index of this first film layer is less than the refractive index of this second thin layer, what need first illustrate is, in the present embodiment, this first film layer is Si oxide (SiOx) layer 40, and first of corresponding this described the first film layer, two, three surfaces are first, two, three Si oxide surfaces 41, 42, 43, this second thin layer is silicon nitride (SiNx) layer 30, and the 4th of corresponding this described the second thin layer, five surfaces are first, two silicon nitride surface 31, 32, wherein:
This Si oxide (SiOx) layer 40, be formed in this substrate 10 and coated this patterned electrodes 20, and there is the 3rd Si oxide surface 43 that the first Si oxide surface 41, a second Si oxide surface 42 and that is in reverse to this first Si oxide surface 41 that is formed in these substrate 10 surfaces 11 connects this first Si oxide surface 41 and be formed in these patterned electrodes 20 surfaces.
This silicon nitride (SiNx) layer 30, be formed in this Si oxide (SiOx) layer 40, and there is first silicon nitride surface 31 and that is formed in this second Si oxide surface 42 and be in reverse to the second silicon nitride surface 32 of this first silicon nitride surface 31.
Therefore, the manufacturing process of the optical match layer of this form, to arrange after three silicon (Si) target 92 plated film cavity 91 is interior, two silicon (Si) target 92 that first should be wherein and coordinate and pass into argon (Ar) gas 93 and oxygen (O2) gas 95, use reaction and form this Si oxide (SiOx) layer 40, a corresponding silicon (Si) target 92 wherein and pass into argon (Ar) gas 93 and nitrogen (N2) gas 94 again, use reaction form one with this silicon nitride (SiNx) layer 30 of this Si oxide (SiOx) layer 40 combination.
Consult shown in Fig. 6,7, for the 3rd embodiment of the present utility model, it mainly shows that optical match layer of the present utility model is applied in the state of contact panel, the framework of this optical match layer is same as the first embodiment, therefore repeat no more, be in the structural configuration that presents complete contact panel in Fig. 6,7 as for its difference, wherein:
Multiple the second axial electrode 22 that this patterned electricity has multiple the first axial electrode 21 and insulate with those first axial electrode 21, respectively this first axial electrode 21 comprises multiple electrode parts 211 and is electrically connected adjacent electrode portion 211 and corresponding respectively multiple bridge parts 212 of this second axial electrode 22, and those bridge parts 212 are formed in the second Si oxide surface 42 of this Si oxide (SiOx) layer 40, each this bridge part 212 and be respectively provided with an insulation course 60 between this second axial electrode 22 again.
In addition, be provided with multiple wires 71 and peripheral wiring 72 at least one side of this patterned electrodes, respectively this wire 71 is electrically connected with each this peripheral wiring 72, and respectively this first axial electrode 21 and each this second axial electrode 22 are electrically connected via each this wire 71 and each this peripheral wiring 72 respectively.
This contact panel more comprise one at least part cover the protective seam 50 of this patterned electrodes; in the present embodiment; this protective seam 50 is the surfaces that are comprehensively formed in patterned electrodes, wire 71 and peripheral wiring 72; and this protective seam 50 has at least one contact openings 51; and this contact openings 51 is these peripheral wirings 72 corresponding to expose portion at least; for example, be electrically connected with these peripheral wirings 72 for external module (flexible circuit board FPC) sees through this contact openings 51, use another enforcement state of reaching.
Wherein above-mentioned patterned electrodes material can be for example indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc oxide, indium germanium zinc oxide etc. can conduct electricity and light transmittance is good metal oxide or grid-shaped metal, how meter Yin Si, Graphene, silene or the above-mentioned at least stack layer of the two or the stack architecture of metal oxide and metallic combination, for example indium tin oxide/silver/indium tin oxide, but not as limit; Bridge part 212 and wire 71 can be for example one of them person or above-mentioned at least the two stack layer or how meter Yin Si, Graphene, the silenes of nitride, oxide, the oxides of nitrogen of gold, silver, copper, aluminium, chromium, platinum, rhodium, molybdenum, titanium, nickel, indium, tin or its alloy or above-mentioned metal, but not as limit; And the material of peripheral wiring 72 can be identical with patterned electrodes or wire 71.In addition, patterned electrodes, wire 71 and peripheral wiring 72 are formed by same conductive material; Protective seam 50 can be organic material, inorganic material or hybrid material.
In addition, consult shown in Fig. 8, in the 3rd embodiment in the time that substrate 10 is an overlay, this contact panel more comprises a decorative layer 80, this decorative layer 80 is positioned at least one side of this contact panel periphery and corresponding in wire 71 and peripheral wiring 72 area configurations, and is arranged between first silicon nitride surface 31 and the surface 11 of this substrate 10 of this silicon nitride (SiNx) layer 30.
In addition, also can between the electrode part of this first axial electrode 21 211 parts and the second Si oxide surface 42 of this Si oxide (SiOx) layer 40, this insulation course 60 be set; Wherein overlay can comprise glass cover, plastic covering plate or other have high mechanical properties material form there is protection (for example scratch resistant), cover or beautify the substrate of its corresponding intrument.Overlay can be flat shape or curve form, or aforesaid combination, but not as limit.In addition, also can be chosen in the side that overlay operates towards user one antifouling plated film (Anti-Smudge Coating) is set.
Consult shown in Fig. 9, for the 4th embodiment of the present utility model, it mainly shows that optical match layer of the present utility model is applied in the state of contact panel, the framework of this optical match layer is same as the second embodiment, therefore repeat no more, be in the structural configuration that presents complete contact panel in the 9th figure as for its difference, wherein:
Multiple the second axial electrode 22 that this patterned electricity has multiple the first axial electrode 21 and insulate with those first axial electrode 21, respectively this first axial electrode 21 comprises multiple electrode parts 211 and is electrically connected adjacent electrode portion 211 and corresponding respectively multiple bridge parts 212 of this second axial electrode 22, and those bridge parts 212 are formed in the surface 11 of this substrate 10, each this bridge part 212 and be respectively provided with an insulation course 60 between this second axial electrode 22 again.
In addition; this contact panel more comprises a protective seam 50; the second silicon nitride surface 32 that should insulation course 60 be in this silicon nitride (SiNx) layer 30 is formed with to this protective seam 50; or as shown in figure 10, this protective seam 50 is second silicon nitride surface 32 that are comprehensively formed in this silicon nitride (SiNx) layer 30.
In addition, be provided with multiple wires 71 and peripheral wiring 72 at least one side of this patterned electrodes, respectively this wire 71 is electrically connected with each this peripheral wiring 72, and respectively this first axial electrode 21 and each this second axial electrode 22 are electrically connected via each this wire 71 and each this peripheral wiring 72 respectively.
Consult again shown in Fig. 9; this protective seam 50 also can be arranged on wire 71 and peripheral wiring 72 regions; and this protective seam 50 has at least one contact openings 51; and this contact openings 51 is these peripheral wirings 72 corresponding to expose portion at least; for example, be electrically connected with these peripheral wirings 72 for external module (flexible circuit board FPC) sees through this contact openings 51, use another enforcement state of reaching.
Wherein the design of the material adapted of above-mentioned patterned electrodes, wire 71 and peripheral wiring 72 can be identical with embodiment tri-.
In addition, consult shown in Figure 11, in the 4th embodiment in the time that substrate 10 is an overlay, this contact panel more comprises a decorative layer 80, in the present embodiment, this decorative layer 80 is arranged between the first Si oxide surface 41 and the surface 11 of this substrate 10 of this Si oxide (SiOx) layer 40, and this decorative layer 80 be positioned at least one side of this contact panel periphery and at least to should wire 71 and this peripheral wiring 72 configure, and this decorative layer 80 is at least arranged between this wire 71 and the surface 11 of this substrate 10, also can be covered by this patterned electrodes part simultaneously, in Figure 11, this decorative layer 80 is covered by the electrode part 211 of the first axial electrode 21 parts.
In addition, this insulation course 60 is at least disposed between patterned electrodes and this decorative layer 80, that is between electrode part 211 parts of this first axial electrode 21 and this decorative layer 80, this insulation course 60 is set; Wherein overlay can be identical with the 3rd embodiment; Same, the material of this patterned electrodes, wire 71 and peripheral wiring 72 is also identical with the 3rd embodiment.
Consult shown in Figure 12, in the 4th embodiment, can not need to arrange this protective seam, and be provided with multiple wires 71 and multiple peripheral wiring 72 at least one side of this patterned electrodes, and allow respectively this first axial electrode 21 and each this second axial electrode 22 respectively via under each this wire 71 and state that respectively this peripheral wiring 72 is electrically connected, allow this silicon nitride (SiNx) layer 30 and this Si oxide (SiOx) layer 40 cover this substrate 10, this silicon nitride (SiNx) layer 30 respectively has at least one opening 33 with this Si oxide (SiOx) layer 40, 44, and this opening 33, 44 these peripheral wirings 72 of expose portion at least, for example, see through this opening 33 for external module (flexible circuit board FPC), 44 and be electrically connected with these peripheral wirings 72, use another enforcement state of reaching.
It should be noted that, in foregoing, have about the implementation that optical match layer and conductive electrode is arranged to substrate surface, do not limit directly contact substrate surface of optical match layer and conductive electrode, in fact between conductive electrode and substrate surface, also can configure according to demand the rete that other do not illustrate, the utility model is not limited to above-mentioned embodiment.
In sum, the various embodiments described above and diagram are only preferred embodiment of the present utility model, when can not with the scope of restriction the utility model enforcement, equalization of generally doing according to this novel claim changes and modification, all should belong in the scope that this new patent contains.
Claims (27)
1. a contact panel for tool optical match layer structure, is characterized in that: comprise:
One substrate;
One patterned electrodes, is arranged on this substrate; And
One optical match layer structure, is arranged between this substrate and this patterned electrodes, and wherein this optical match layer comprises:
One the first film layer, is formed in this substrate, and has a first surface and that is formed in this substrate surface and be in reverse to the second surface of this first surface;
One second thin layer, is formed in this first film layer, and has the 4th surface that the 3rd surface and that is formed in this second surface is in reverse to the 3rd surface and is shaped for this patterned electrodes.
2. the contact panel of tool optical match layer structure as claimed in claim 1, is characterized in that: more comprise a protective seam, be arranged on this patterned electrodes and at least partly cover this patterned electrodes.
3. the contact panel of tool optical match layer structure as claimed in claim 1, is characterized in that: described patterned electricity has multiple the first axial electrode and multiple the second axial electrode with those the first axial electrode insulation.
4. the contact panel of tool optical match layer structure as claimed in claim 3, it is characterized in that: described each the first axial electrode comprises multiple electrode parts and is electrically connected adjacent electrode portion and corresponding respectively multiple bridge parts of this second axial electrode those bridge parts and be respectively provided with an insulation course between this second axial electrode.
5. the contact panel of tool optical match layer structure as claimed in claim 3, it is characterized in that: at least one side that more comprises multiple wires and multiple peripheral wiring and be positioned at this patterned electrodes, wherein respectively this wire is electrically connected with each this peripheral wiring, and respectively this first axial electrode and each this second axial electrode are electrically connected via each this wire and each this peripheral wiring respectively.
6. the contact panel of tool optical match layer structure as claimed in claim 5; it is characterized in that: more comprise a protective seam; be arranged at the 4th surface of this second thin layer and cover this patterned electrodes, those wires and those peripheral wirings, wherein this protective seam has at least one contact openings and at least this peripheral wiring of expose portion of this contact openings.
7. the contact panel of tool optical match layer structure as claimed in claim 5, it is characterized in that: more comprise a decorative layer, be arranged between the first surface of this first film layer and the surface of this substrate, this decorative layer is positioned at least one side of this contact panel periphery at least corresponding those wires and the configuration of those peripheral wirings.
8. the contact panel of tool optical match layer structure as claimed in claim 5, is characterized in that: described patterned electrodes and peripheral wiring are same conductive.
9. the contact panel of tool optical match layer structure as claimed in claim 5, is characterized in that: described wire and peripheral wiring are same conductive.
10. the contact panel of tool optical match layer structure as claimed in claim 5, is characterized in that: described patterned electrodes, wire and peripheral wiring are same conductive.
The contact panel of 11. tool optical match layer structure as claimed in claim 1, is characterized in that: the refractive index of described the first film layer is greater than the refractive index of this second thin layer.
The contact panel of 12. tool optical match layer structure as claimed in claim 1, it is characterized in that: described the first film layer is a silicon nitride layer, this second thin layer is a silicon oxide layer, and the refractive index value of this silicon nitride layer is between 1.75 to 1.95, and the refractive index value of this silicon oxide layer is between 1.55 to 1.42.
The contact panel of 13. 1 kinds of tool optical match layer structures, is characterized in that: comprise:
One substrate;
One patterned electrodes, is arranged on this substrate; And
One optical match layer structure, is arranged at this substrate, and this patterned electrodes is between this optical match layer structure and this substrate, and wherein this optical match layer comprises:
One the first film layer, be formed in this substrate and coated this patterned electrodes, and there is the 3rd surface that a first surface, that is formed in this substrate surface is in reverse to second surface and this first surface of connection of this first surface and is formed in this patterned electrodes surface;
One second thin layer, is formed in this first film layer, and has the 4th surface and that is formed in this second surface and be in reverse to the 5th surface on the 4th surface.
The contact panel of 14. tool optical match layer structure as claimed in claim 13, is characterized in that: described patterned electricity has multiple the first axial electrode and multiple the second axial electrode with those the first axial electrode insulation.
The contact panel of 15. tool optical match layer structure as claimed in claim 14, it is characterized in that: described each the first axial electrode comprises multiple electrode parts and is electrically connected adjacent electrode portion and corresponding respectively multiple bridge parts of this second axial electrode those bridge parts and be respectively provided with an insulation course between this second axial electrode.
The contact panel of 16. tool optical match layer structure as claimed in claim 15, is characterized in that: more comprise a protective seam, be arranged at the 5th surface of this second thin layer and at least to should insulation course.
The contact panel of 17. tool optical match layer structure as claimed in claim 14, it is characterized in that: at least one side that more comprises multiple wires and multiple peripheral wiring and be positioned at this patterned electrodes, wherein respectively this wire is electrically connected with each this peripheral wiring, and respectively this first axial electrode and each this second axial electrode are electrically connected via each this wire and each this peripheral wiring respectively.
The contact panel of 18. tool optical match layer structure as claimed in claim 17, it is characterized in that: described the first film layer and this second thin layer cover this substrate, this the first film layer and this second thin layer respectively have at least one opening, and each at least this peripheral wiring of expose portion of this opening.
The contact panel of 19. tool optical match layer structure as claimed in claim 18; it is characterized in that: more comprise a protective seam; be arranged at the 5th surface of this second thin layer and cover this substrate, this protective seam has at least one contact openings, and at least this peripheral wiring of expose portion of this contact openings.
The contact panel of 20. tool optical match layer structure as claimed in claim 17, it is characterized in that: more comprise a decorative layer, be arranged between the first surface of this first film layer and the surface of this substrate, this decorative layer is positioned at least one side of this contact panel periphery at least corresponding those wires and the configuration of those peripheral wirings.
The contact panel of 21. tool optical match layer structure as claimed in claim 20, is characterized in that: described patterned electrodes part covers this decorative layer.
The contact panel of 22. tool optical match layer structure as claimed in claim 21, is characterized in that: described insulation course is at least disposed between patterned electrodes and this decorative layer.
The contact panel of 23. tool optical match layer structure as claimed in claim 17, is characterized in that: described patterned electrodes and peripheral wiring are same conductive.
The contact panel of 24. tool optical match layer structure as claimed in claim 17, is characterized in that: described wire and peripheral wiring are same conductive.
The contact panel of 25. tool optical match layer structure as claimed in claim 17, is characterized in that: described patterned electrodes, wire and those peripheral wirings are same conductive.
The contact panel of 26. tool optical match layer structure as claimed in claim 13, is characterized in that: the refractive index of described the first film layer is less than the refractive index of this second thin layer.
The contact panel of 27. tool optical match layer structure as claimed in claim 13, it is characterized in that: described the first film layer is a silicon oxide layer, this second thin layer is a silicon nitride layer, and the refractive index value of this silicon nitride layer is between 1.75 to 1.95, and the refractive index value of this silicon oxide layer is between 1.55 to 1.42.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320891240.6U CN203759661U (en) | 2013-12-31 | 2013-12-31 | Touch panel with optical matching layer structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320891240.6U CN203759661U (en) | 2013-12-31 | 2013-12-31 | Touch panel with optical matching layer structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203759661U true CN203759661U (en) | 2014-08-06 |
Family
ID=51254913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320891240.6U Expired - Fee Related CN203759661U (en) | 2013-12-31 | 2013-12-31 | Touch panel with optical matching layer structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203759661U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104750293A (en) * | 2013-12-31 | 2015-07-01 | 胜华科技股份有限公司 | Touch panel with optical matching layer structure and forming method of optical matching layers |
| CN106325587A (en) * | 2015-06-25 | 2017-01-11 | 达鸿先进科技股份有限公司 | Touch panel and manufacturing method thereof |
-
2013
- 2013-12-31 CN CN201320891240.6U patent/CN203759661U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104750293A (en) * | 2013-12-31 | 2015-07-01 | 胜华科技股份有限公司 | Touch panel with optical matching layer structure and forming method of optical matching layers |
| CN106325587A (en) * | 2015-06-25 | 2017-01-11 | 达鸿先进科技股份有限公司 | Touch panel and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8791368B2 (en) | Conductive structure body and method for manufacturing the same | |
| US9836144B2 (en) | Touch panel | |
| CN104216547B (en) | A kind of contact panel and its manufacture method | |
| CN103201105B (en) | Transparent conductive film | |
| CN109599425A (en) | OLED touching display screen and preparation method thereof | |
| WO2014169730A1 (en) | Touch control panel and manufacturing method therefor | |
| CN108932078A (en) | Touch panel and preparation method thereof, electronic device | |
| CN203376702U (en) | Touch panel | |
| CN106919278A (en) | Contact panel | |
| JP2012101544A (en) | Transparent conductive layered film, method for producing the same, and touch panel including the same | |
| CN110462830A (en) | Display base plate and preparation method thereof, display panel and display device | |
| CN104281313A (en) | Touch panel | |
| CN203759661U (en) | Touch panel with optical matching layer structure | |
| CN201465083U (en) | Monolayer conductive film capacitive touch screen | |
| CN106708322A (en) | Touch panel, touch panel display device and touch panel preparing method | |
| TW201535190A (en) | Conductive structure body precursor, conductive structure body and method for manufacturing the same, and touch screen panel | |
| CN106383614A (en) | Touch display panel | |
| CN103839865B (en) | Manufacturing method of touch device | |
| TW201113790A (en) | A touch panel module and a fabrication method thereof | |
| CN104750293A (en) | Touch panel with optical matching layer structure and forming method of optical matching layers | |
| CN103207692B (en) | Comprise the image display system of contact panel and the manufacture method of contact panel | |
| CN204631826U (en) | Border structure, touch screen | |
| CN107463298A (en) | Capacitive touch screen | |
| CN107817916A (en) | Tactile sensor and the touch panel including the tactile sensor | |
| CN202453847U (en) | Touch control sensing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140806 Termination date: 20171231 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |