CN203741456U - Polycrystalline silicon ingot casting furnace - Google Patents
Polycrystalline silicon ingot casting furnace Download PDFInfo
- Publication number
- CN203741456U CN203741456U CN201420091316.1U CN201420091316U CN203741456U CN 203741456 U CN203741456 U CN 203741456U CN 201420091316 U CN201420091316 U CN 201420091316U CN 203741456 U CN203741456 U CN 203741456U
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- China
- Prior art keywords
- heater
- quartz crucible
- polycrystalline silicon
- graphite
- infrared thermometer
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 23
- 238000005266 casting Methods 0.000 title abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000010453 quartz Substances 0.000 claims abstract description 38
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 30
- 239000010439 graphite Substances 0.000 claims abstract description 30
- 238000009529 body temperature measurement Methods 0.000 claims abstract description 19
- 238000009413 insulation Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 21
- 239000003351 stiffener Substances 0.000 claims description 7
- 238000004364 calculation method Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 3
- 230000003595 spectral effect Effects 0.000 claims description 2
- 230000004304 visual acuity Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052710 silicon Inorganic materials 0.000 abstract description 17
- 239000010703 silicon Substances 0.000 abstract description 17
- 238000005259 measurement Methods 0.000 abstract description 9
- 239000007788 liquid Substances 0.000 abstract description 6
- 230000001681 protective effect Effects 0.000 abstract 3
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 46
- 239000002210 silicon-based material Substances 0.000 description 29
- 239000011521 glass Substances 0.000 description 5
- 238000012937 correction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011897 real-time detection Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
Abstract
The utility model belongs to the technical field of polycrystalline silicon ingot casting and aims to provide a polycrystalline silicon ingot casting furnace. The polycrystalline silicon ingot casting furnace comprises a furnace body, a heat-insulation cage, graphite protective boards, a directional heat-dissipation block, graphite support posts, an infrared thermometer, a programmable logic controller, a thermocouple thermometer, a quartz crucible and a heater, wherein the heater is mounted on the furnace body; the graphite protective boards cover the interior of the heater; the quartz crucible is mounted in one graphite protective board. The polycrystalline silicon ingot casting furnace has the benefits as follows: the thermocouple thermometer is used for conducing contact measurement on the temperature of the central area at the bottom of the quartz crucible, accurate temperature measurement and stable readings are achieved, the temperature of the measured area can be reflected really, and disturbance on the temperature value from silicon liquid is small; the infrared thermometer is used for conducing non-contact measurement on the temperatures of corner areas at the bottom of the quartz crucible, the response time is short, the resolving accuracy is high, and temperature fluctuations after silicon liquid flows in can be quickly detected.
Description
Technical field
The utility model belongs to polycrystalline silicon ingot casting technical field, particularly a kind of polycrystalline silicon ingot or purifying furnace.
Background technology
Polycrystalline ingot furnace is for the preparation of the professional equipment of solar-grade polysilicon ingot, along with being surging forward of photovoltaic industry, is rapidly developed.The real process for silicon material fusing recrystallization of the production process of polycrystalline cast ingot, needs through feeding, vacuumize, heat, melt, length crystalline substance, annealing, cooling, the operation such as come out of the stove.
In recent years, enterprise, in order to improve the efficiency of conversion of polycrystalline silicon ingot casting cell piece, has carried out positive exploration and test both at home and abroad, and the efficient polycrystalline of seed crystal method is current more ripe and feasible method.Adopt the method when filling with substance, need first in crucible bottom, to spread one deck broken silicon wafers as seed crystal, then continue to load polycrystalline silicon material in the above; During fusing, guarantee the fusing layer by layer from the top down of silicon material, when being melted to the seed crystal that is covered with broken silicon wafers, redirect enters next step; During long crystalline substance, on the basis of broken silicon wafers seed crystal, crystal grain tiny and that be evenly distributed is formed on solution bottom, and then the high-quality silicon ingot of the growth low defect of formation that makes progress; The efficient polycrystalline that adopts seed crystal method to produce, improves more than 0.2% compared with common ingot casting polycrystalline battery efficiency under similarity condition, now in a plurality of producers, is verified and promotes at home.
The efficient polycrystal silicon ingot of seed crystal method because there is the silicon material of not remelting crystallization bottom, so low 8% left and right of the more common casting ingot method of yield rate, this is its maximum drawback.Hence one can see that, and the key takeaway relevant to the efficient polycrystalline yield rate of seed crystal method is exactly the control of seed crystal height, and the lower silicon ingot of seed crystal Bock Altitude remelting crystallising part is just more, effectively utilizes part also just more.The measurement of seed crystal height at present generally all realizes by quartz glass bar manual operation, the problem of bringing is except every stove all needs to consume a glass stick, high temperature lower-glass rod easily occurs that Bending Deformation causes measuring error, and more very it, once glass stick ruptures, can scrap whole silicon ingot.In addition, when all tables are promoted the efficient polycrystalline of seed crystal method in batches, between different operating personnel, the difference of operation technique also can make take off data have deviation, therefore in order to guarantee the success ratio of seed crystal reservation, in the time of need be by redirect, seed crystal height be increased to 20mm left and right, and this will cause the molten silicon material in bottom too much, makes the whole ingot yield rate of silicon ingot too low, finally affect productivity effect, limited the popularization of the efficient polycrystalline of seed crystal method.
Utility model content
The technical problems to be solved in the utility model is, overcomes deficiency of the prior art, and a kind of polycrystalline silicon ingot or purifying furnace is provided.
For technical solution problem, solution of the present utility model is:
A kind of polycrystalline silicon ingot or purifying furnace is provided, comprises body of heater, heat-insulation cage, graphite backplate, oriented heat dissipating piece, graphite pillar stiffener, infrared thermometer, programmable logic controller, thermocouple temperature measurement instrument, quartz crucible and well heater.
Described heat-insulation cage is lifted on body of heater, oriented heat dissipating piece is installed in body of heater by a plurality of graphite pillar stiffeners, and graphite backplate is installed on the upper surface of oriented heat dissipating piece, and described well heater is installed on body of heater, and graphite backplate is covered in this well heater, described quartz crucible is installed in graphite backplate; Infrared thermometer is installed on the bottom of body of heater, sets gradually through hole to form passage on body of heater, heat-insulation cage and oriented heat dissipating piece, makes infrared rays that infrared thermometer can survey the radiation of graphite backplate to detect quartz crucible bottom temp; Thermocouple temperature measurement instrument is installed on the bottom of graphite backplate, and successively by the through hole on body of heater, heat-insulation cage and oriented heat dissipating piece, detects quartz crucible bottom temp; Programmable logic controller passes through respectively wire separately and is connected with infrared thermometer, thermocouple temperature measurement instrument, for gathering the data of infrared thermometer and thermocouple temperature measurement instrument, carries out calculation process.
In the utility model, described thermocouple temperature measurement instrument is R type thermopair, and useful range is 0 ℃～1800 ℃, is installed on the central zone of quartz crucible bottom.
In the utility model, described infrared thermometer adopts 1um spectral response, and useful range is 450 ℃～1740 ℃, and 0.1 ℃ of resolving power is installed on the corner areas of quartz crucible bottom.
Many point for measuring temperature monitoring polycrystalline cast ingot seed crystal height methods based on the utility model polycrystalline silicon ingot or purifying furnace: be filled with silicon material in quartz crucible inside, described silicon material comprises seed crystal silicon material and primary polycrystalline silicon material, wherein seed crystal silicon material level is in quartz crucible bottom, the height of seed crystal silicon material is 30～50mm, and primary polycrystalline silicon material covers the top of seed crystal silicon material; Central zone and corner areas in quartz crucible bottom are installed two points for measuring temperature, by real-time detection quartz crucible bottom temp, special programmable logic controller is equipped with simultaneously, for gathering the data of infrared thermometer and thermocouple temperature measurement instrument, carry out calculation process, and then calculate out seed crystal height H, unit is mm, meets formula:
H wherein
0be seed crystal height of foundation, unit is mm; γ
0centered by thermocouple measurement instrument correction factor, numerical range is 0～1; γ
1for corner Infrared survey instrument correction factor, numerical range is 0～1; T represents seed crystal and solution solid-liquid interface temperature, and unit is ℃; T
0represent the measured temperature of central hot galvanic couple temperature measurer, unit is ℃; N represents current time, and interval unit is minute; N-1, represents that previous moment, interval unit are minute; T
1 nrepresent the measured temperature of corner infrared thermometer current time, unit is ℃; T
1 (n ?1)represent the measured temperature of corner infrared thermometer previous moment, unit is ℃; σ represents that silicon material temperature degree is with the variation factor of distance, and unit is ℃/mm; T represents the time, and interval unit is minute.
Compared with prior art, the beneficial effects of the utility model are:
Adopt thermocouple temperature measurement instrument contact type measurement quartz crucible bottom centre regional temperature, have thermometric accurate, the feature of stable reading, can actual response go out the temperature at point for measuring temperature place, and Temperature numerical is subject to the impact of silicon liquid disturbance little;
The temperature that adopts infrared thermometer non-contact measurement quartz crucible bottom sides angular zone, has the time of response fast, and the advantage that resolving accuracy is high can detect rapidly the temperature fluctuation causing after silicon solution flows into.
Accompanying drawing explanation
Fig. 1 is the sectional view of charging of the present utility model while completing;
Fig. 2 is thawing later stage silicon liquid status figure of the present utility model;
Fig. 3 is employing glass stick the seed crystal height of measuring and the graphic representation that melts speed;
Fig. 4 is for adopting the temperature of the utility model method measurement and the seed crystal altitude curve figure calculating out;
Reference numeral in figure is: 1. body of heater; 2. heat-insulation cage; 3. graphite backplate; 4. oriented heat dissipating piece; 5. graphite pillar stiffener; 6. infrared thermometer; 7. programmable logic controller; 8. thermocouple temperature measurement instrument; 9. quartz crucible; 10. well heater; 11 seed crystal silicon material; 12. primary polycrystalline silicon materials; 13. silicon solution.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the utility model is described in further detail:
The utility model provides a kind of polycrystalline silicon ingot or purifying furnace, comprises body of heater 1, heat-insulation cage 2, graphite backplate 3, oriented heat dissipating piece 4, graphite pillar stiffener 5, infrared thermometer 6, programmable logic controller 7, thermocouple temperature measurement instrument 8, quartz crucible 9, well heater 10; Described heat-insulation cage 2 is lifted on body of heater 1, and oriented heat dissipating piece 4 is installed in body of heater 1 by a plurality of graphite pillar stiffeners 5, and graphite backplate 3 is installed on the upper surface of oriented heat dissipating piece 4; Described well heater 10 is installed on body of heater 1, and graphite backplate 3 is covered in this well heater 10.
Described quartz crucible 9 is installed in graphite backplate 3, and be filled with silicon material in quartz crucible 9 inside, in quartz crucible 9 inside, be filled with silicon material, described silicon material comprises seed crystal silicon material 11 and primary polycrystalline silicon material 13, wherein seed crystal silicon material 11 is positioned at quartz crucible 9 bottoms, the height of seed crystal silicon material 11 is 40mm, and primary polycrystalline silicon material 12 covers the top of seed crystal silicon material 11; Infrared thermometer 6 is installed on the bottom of body of heater 1, sets gradually through hole to form passage on body of heater 1, heat-insulation cage 2 and oriented heat dissipating piece 4, makes infrared rays that infrared thermometer 6 can survey 3 radiation of graphite backplate to detect quartz crucible 9 temperature; Because the caloradiance of well heater 10 increases and weakens with distance, the silicon material of quartz crucible 9 interior peripheral regions is nearer apart from well heater 10 sidepieces, therefore temperature is higher, when being melted into melted silicon 13, solid state si material can flow down along quartz crucible 9 walls, make corner areas seed crystal be easier to fusing, by the monitoring of this point for measuring temperature, can effectively obtain the real-time change of corner areas temperature.
Described thermocouple temperature measurement instrument 8 is installed on the bottom, central zone of graphite backplate 3, and successively by the through hole on body of heater 1, heat-insulation cage 2 and oriented heat dissipating piece 4, detects quartz crucible 9 bottom temps; Because the caloradiance of well heater 10 increases and weakens with distance, the silicon material of quartz crucible 9 interior central zones is far away apart from well heater 10 sidepieces, therefore temperature is lower, the more late silicon solution 13 that is melted into of solid state si material, to be subject to solution disturbing influence less for the temperature in this point for measuring temperature region, can reflect more realistically solution distance, remain seed crystal height.
The signal that infrared thermometer 6 gathers it by wire respectively with thermocouple temperature measurement instrument 8 transfers to the programmable logic controller 7 being connected and processes.
In the present embodiment, polycrystalline ingot furnace charging quality is 700KG, adopts the efficient polycrystalline technique of seed crystal method, later stage to be melted starts to detect seed crystal height, adopt conventional quartz glass stick hand dipping, adopt many point for measuring temperature calculation seed crystal height simultaneously, contrast the data that both calculate seed crystal residual altitude.
As shown in Figure 2, in fusing later stage quartz crucible 9 internal states, most solid state si material has been converted into silicon solution 13 in quartz crucible 9 tops, and 11, seed crystal silicon material is still solid-state in quartz crucible 9 bottoms.The central zone of thermocouple temperature measurement instrument 8 in quartz crucible 9 bottoms, the temperature gathering is T
1, infrared thermometer 6 is surveyed the corner areas of quartz crucible 9 bottoms, and the temperature gathering is T
0.Now, at interval of one hour, with glass stick, measure a seed crystal residual altitude, draw seed crystal residual altitude and seed crystal and melt speed curve diagram as shown in Figure 3.Meanwhile, every thermocouple temperature measurement instrument 8 temperature T of one minute record and infrared thermometer 6 temperature, seed crystal height H, unit is mm, by following formula, calculates:
H wherein
0be seed crystal height of foundation, unit is mm; γ
0centered by thermocouple measurement instrument correction factor, numerical range is 0～1; γ
1for corner Infrared survey instrument correction factor, numerical range is 0～1; ; T represents seed crystal and solution solid-liquid interface temperature, and unit is ℃; T
0represent the temperature that central hot galvanic couple temperature measurer 8 is measured, unit is ℃; N represents current time, and interval unit is minute; N-1, represents that previous moment, interval unit are minute; T
1 nrepresent the measured temperature of corner infrared thermometer 6 current times, unit is ℃; T
1 (n ?1)represent the measured temperature of corner infrared thermometer 6 previous moment, unit is ℃; σ represents that silicon material temperature degree is with the variation factor of distance, and unit is ℃/mm; T represents the time, and interval unit is minute.
Shown in Fig. 4, be and melt later stage electric thermo-couple temperature and infrared temperature graphic representation and the seed crystal residual altitude graphic representation that utilizes seed crystal high computational formula to calculate, contrast in known and Fig. 3 and show that employing conventional quartz glass stick measurement the data obtained is suitable, and more there is continuity, during actually operating, adopt the method automatically to realize the redirect of having melted, seed crystal height is controlled at 5mm left and right, thereby has verified the feasibility of the method.
Claims (3)
1. a polycrystalline silicon ingot or purifying furnace, comprises body of heater, it is characterized in that, also comprises heat-insulation cage, graphite backplate, oriented heat dissipating piece, graphite pillar stiffener, infrared thermometer, programmable logic controller, thermocouple temperature measurement instrument, quartz crucible and well heater;
Described heat-insulation cage is lifted on body of heater, oriented heat dissipating piece is installed in body of heater by a plurality of graphite pillar stiffeners, and graphite backplate is installed on the upper surface of oriented heat dissipating piece, and described well heater is installed on body of heater, and graphite backplate is covered in this well heater, described quartz crucible is installed in graphite backplate;
Infrared thermometer is installed on the bottom of body of heater, sets gradually through hole to form passage on body of heater, heat-insulation cage and oriented heat dissipating piece, makes infrared rays that infrared thermometer can survey the radiation of graphite backplate to detect quartz crucible bottom temp;
Thermocouple temperature measurement instrument is installed on the bottom of graphite backplate, and successively by the through hole on body of heater, heat-insulation cage and oriented heat dissipating piece, detects quartz crucible bottom temp; Programmable logic controller passes through respectively wire separately and is connected with infrared thermometer, thermocouple temperature measurement instrument, for gathering the data of infrared thermometer and thermocouple temperature measurement instrument, carries out calculation process.
2. according to the polycrystalline silicon ingot or purifying furnace described in claim 1, it is characterized in that, described thermocouple temperature measurement instrument is R type thermopair, and useful range is 0 ℃～1800 ℃, is installed on the central zone of quartz crucible bottom.
3. according to the polycrystalline silicon ingot or purifying furnace described in claim 1, it is characterized in that, described infrared thermometer adopts 1um spectral response, and useful range is 450 ℃～1740 ℃, and 0.1 ℃ of resolving power is installed on the corner areas of quartz crucible bottom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420091316.1U CN203741456U (en) | 2014-03-01 | 2014-03-01 | Polycrystalline silicon ingot casting furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420091316.1U CN203741456U (en) | 2014-03-01 | 2014-03-01 | Polycrystalline silicon ingot casting furnace |
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| Publication Number | Publication Date |
|---|---|
| CN203741456U true CN203741456U (en) | 2014-07-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420091316.1U Expired - Lifetime CN203741456U (en) | 2014-03-01 | 2014-03-01 | Polycrystalline silicon ingot casting furnace |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103924295A (en) * | 2014-03-01 | 2014-07-16 | 浙江晶盛机电股份有限公司 | Polysilicon ingot furnace and method for monitoring polycrystalline ingot seed height at multiple temperature measuring points |
-
2014
- 2014-03-01 CN CN201420091316.1U patent/CN203741456U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103924295A (en) * | 2014-03-01 | 2014-07-16 | 浙江晶盛机电股份有限公司 | Polysilicon ingot furnace and method for monitoring polycrystalline ingot seed height at multiple temperature measuring points |
| CN103924295B (en) * | 2014-03-01 | 2016-08-17 | 浙江晶盛机电股份有限公司 | A kind of polycrystalline silicon ingot or purifying furnace and many points for measuring temperature monitoring polycrystalline cast ingot seed crystal height method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140730 |