CN203732166U - APD temperature self-adaptive near-infrared single-photon detection apparatus - Google Patents
APD temperature self-adaptive near-infrared single-photon detection apparatus Download PDFInfo
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- CN203732166U CN203732166U CN201320859186.7U CN201320859186U CN203732166U CN 203732166 U CN203732166 U CN 203732166U CN 201320859186 U CN201320859186 U CN 201320859186U CN 203732166 U CN203732166 U CN 203732166U
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- 238000001514 detection method Methods 0.000 title abstract description 12
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- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 19
- 230000004043 responsiveness Effects 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
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- 230000005855 radiation Effects 0.000 description 4
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- 238000009434 installation Methods 0.000 description 2
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- 230000009471 action Effects 0.000 description 1
- 230000029918 bioluminescence Effects 0.000 description 1
- 238000005415 bioluminescence Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The utility model discloses an APD temperature self-adaptive near-infrared single-photon detection apparatus which comprises an APD (avalanche photodiode), a DC bias temperature following circuit, a DC bias protection circuit, a signal amplification output circuit, a DC-DC high-voltage module and a housing. The DC bias temperature following circuit and the DC bias protection circuit are connected with an input terminal of the DC-DC high-voltage module. The cathode of the APD is connected with an output terminal of the DC-DC high-voltage module through a resistor R1. The anode of the APD is connected with the signal amplification output circuit and is connected to ground through a load resistance R2. The DC bias temperature following circuit, the DC bias protection circuit, the signal amplification output circuit and the DC-DC high-voltage module are mounted in an inner chamber of the housing. The APD is embedded in the front end of the housing. With the DC bias temperature following circuit, the detection apparatus of the utility model guarantees the stabilization of APD gain when the temperature changes.
Description
Technical field
The utility model relates to high speed quantum to be surveyed and sensitive photodetection field, relates in particular to a kind of APD temperature self-adaptation near-infrared single photon sniffer.
Background technology
The main devices of traditionally, carrying out single photon detection is photomultiplier and avalanche photodide (APD).For Uv and visible light, photomultiplier has good responsiveness, high temporal resolution and very little dark current, is applicable to very much the single photon detection of this wave band.But it exceedes the detection efficiency very low (being less than 1%) of the light of 1 micron to wavelength, this makes it almost there is no practical value in Infrared survey field.Avalanche photodide APD is a kind of photoelectric detector of high-gain, can be applied to the detection of near-infrared band.
Avalanche photodide APD is that a kind of light of P-N junction type detects diode, utilizes the avalanche multiplication effect of charge carrier to amplify photosignal to improve detection sensitivity.When avalanche photodide APD adds sufficiently high reverse biased, while being operated near breakdown reverse voltage, being subject to illumination and will producing photo-generated carrier at absorption layer, these charge carriers inject dynode layer then.Photo-generated carrier obtains enough energy from highfield at dynode layer, can collide lattice atoms and make its ionization, produces new electron hole pair.New electron hole pair accelerates and again bumps and produce more electron hole pair with lattice atoms under electric field action.This collision ionization phenomenon circulation occurs, and as snowslide, photocurrent is doubled therein, and formation can be by the stable electric current that is proportional to intensity of illumination of surveying.
The internal gain of avalanche photodide APD is very sensitive to temperature, and along with environment temperature changes, the gain meeting occurrence temperature drift phenomenon of avalanche photodide APD, causes the deterioration of measuring accuracy.In the time that avalanche photodide APD temperature raises, the charge carrier number being produced by thermal excitation also will increase, this part charge carrier obtains avalanche gain equally, but these charge carriers will consume field intensity greatly, the field intensity that P-N ties is reduced, thereby the gain of avalanche photodide APD is reduced; Otherwise in the time that the temperature of avalanche photodide APD reduces, its gain will increase.
The responsiveness of current normally used avalanche photodide APD is generally below 1A/W.And the avalanche photodide APD of responsiveness more than 1A/W, when single photon is measured use, temperature drift phenomenon can be more serious, because this avalanche photodide APD is that the ultra-high sensitive such as bioluminescence, atmospheric exploration field of detecting is necessary, therefore in use, need to there is technical method to keep the gain of avalanche photodide APD constant.Current technical method one is to utilize semiconductor technology to make thermostat, makes avalanche photodide APD keep temperature-resistant in the time of work, and this method requires very high to the feedback circuit of system, and complex structure, power consumption is high, bulky, and inconvenience is installed and used; Another kind is by the numerical value of single-chip microcomputer collecting temperature sensing chip or thermal resistance, calculate through single-chip microcomputer internal processes, and then pin output control signal, control high pressure chip and adjust APD direct current (DC) bias, this method not only needs hardware design, also need corresponding software processing, circuit complexity, realizes difficulty.
Summary of the invention
The technical problems to be solved in the utility model is to provide a kind of APD temperature self-adaptation near-infrared single photon sniffer, can realize near-infrared single photon measures, and while utilizing general-purpose diode forward direction On current constant, the conduction voltage drop characteristic that approximately linear reduces with the rising of temperature, the direct current (DC) bias of avalanche photodide APD while revising temperature variation, realize the self-adaptation of temperature, in conjunction with the design of mechanical mechanism, that while ensureing its single photon detection, gains is stable, thermal adaptability is good, circuit is simple, and volume is little, is convenient to install and use.
In order to solve the problems of the technologies described above, the technical solution adopted in the utility model is: APD temperature self-adaptation near-infrared single photon sniffer, comprises avalanche photodide APD, direct current (DC) bias temperature following circuit, direct current (DC) bias holding circuit, signal amplification output circuit, DC-DC high-pressure modular and shell;
Direct current (DC) bias temperature following circuit, direct current (DC) bias holding circuit are connected with DC-DC high-pressure modular input end;
The negative electrode of avalanche photodide APD is connected with DC-DC high-pressure modular output terminal by resistance R 1;
The anode of avalanche photodide APD is connected with signal amplification output circuit;
The anode of avalanche photodide APD is by pull-up resistor R2 ground connection;
Shell comprises the barrel-type casing that two ends are sealed by end cap;
Direct current (DC) bias temperature following circuit, direct current (DC) bias holding circuit, signal amplification output circuit, DC-DC high-pressure modular are installed in cylindrical cavity;
Avalanche photodide APD is embedded on the end cap of shell.
As preferably, the responsiveness of avalanche photodide APD 1A/W and more than.
As preferably, direct current (DC) bias temperature following circuit comprises constant current source, diode D1, voltage follower circuit and voltage amplifier circuit; Described constant current source output connects respectively diode D1 anode and voltage follower circuit, diode D1 plus earth; Voltage follower circuit is connected with voltage amplifier circuit.
As further preferred, diode D1 is close to the rear portion of avalanche photodide APD and installs.
As further preferred, install at the rear portion that diode D1 is close to avalanche photodide APD by interface Heat Conduction Material.
As preferably, direct current (DC) bias holding circuit comprises diode D2, amplifier U3 and adjustable resistance R6; The adjustable end of the positive input termination adjustable resistance R6 of described amplifier U3, the negative input end of amplifier U3 is connected diode D2 negative electrode with output terminal, composition voltage follower.
As preferably, signal amplification output circuit comprises amplifying circuit and comparator circuit; Described amplifying circuit is two-stage structure for amplifying, and first order amplifying circuit uses amplifier U4 tentatively to amplify APD signal, and second level amplifying circuit uses triode Q1 further to amplify APD signal; In described comparator circuit, comparer U5 positive input terminal connects the adjustable end of R11, sets comparative voltage threshold value, compares with the voltage of amplifying circuit output, finally exports the photon signal of Transistor-Transistor Logic level.
As preferably, shell comprises protecgulum, bonnet, housing; Described housing is the cylindrical member of both ends open, and protecgulum sealing is arranged on housing front opening place, and described avalanche photodide APD is embedded in protecgulum end face, and bonnet sealing is arranged on housing open rearward end place.
As further preferred, the outer face of protecgulum is provided with radiating groove.
As preferably, shell and end cap are made up of the aluminium of good heat conductivity.
The beneficial effects of the utility model are:
Utilize the temperature characterisitic of general-purpose diode, designed direct current (DC) bias temperature following circuit, ensure that the gain of avalanche photodide APD is substantially constant in the time of temperature variation, can well be applied to various environment;
Adopt direct current (DC) bias holding circuit, can prevent that the voltage that fortuitous event causes from raising suddenly, protection detector circuit;
Adopt temperature self-adaptation circuit to ensure the gain stabilization of avalanche photodide APD, effectively reduced detector size, greatly reduced installation difficulty, easy to use.
Adopt corresponding shell design, be convenient to detecting module heat radiation, reached as early as possible thermal equilibrium, effectively reduced thermonoise.
Brief description of the drawings
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
Fig. 1 is the structural representation of the utility model APD temperature self-adaptation near-infrared single photon sniffer embodiment;
Fig. 2 is the front-cover structure figure of the utility model APD temperature self-adaptation near-infrared single photon sniffer embodiment;
Fig. 3 is the base arrangement figure of the utility model APD temperature self-adaptation near-infrared single photon sniffer embodiment;
Fig. 4 is the shell structure figure of the utility model APD temperature self-adaptation near-infrared single photon sniffer embodiment;
Fig. 5 is the schematic block circuit diagram of the utility model APD temperature self-adaptation near-infrared single photon sniffer embodiment;
Fig. 6 is the circuit theory diagrams of the direct current (DC) bias temperature following circuit of the utility model APD temperature self-adaptation near-infrared single photon sniffer embodiment;
Fig. 7 is the circuit theory diagrams of the direct current (DC) bias holding circuit of the utility model APD temperature self-adaptation near-infrared single photon sniffer embodiment;
Fig. 8 is the circuit theory diagrams of the signal amplification output circuit of the utility model APD temperature self-adaptation near-infrared single photon sniffer embodiment.
In Fig. 1,1-protecgulum, 2-APD, 3-diode D1,4-base plate, 5-web member, 6-bonnet 7-pillar, 8-housing, 9-circuit board, 10-DC-DC high-pressure modular, 11-radiating groove, 12-strip groove.
Embodiment
The APD near-infrared single photon detector of responsiveness more than 1A/W, is made up of avalanche photodide APD, direct current (DC) bias temperature following circuit, direct current (DC) bias holding circuit, signal amplification output circuit, DC-DC high-pressure modular and shell.
Wherein avalanche photodide APD responsiveness is more than 1A/W.
In Fig. 5, direct current (DC) bias temperature following circuit, direct current (DC) bias holding circuit are connected with DC-DC high-pressure modular input end;
DC-DC high-pressure modular output terminal is connected with the negative electrode of avalanche photodide APD by resistance R 1;
The anode of avalanche photodide APD is connected with signal amplification output circuit;
The anode of avalanche photodide APD is by pull-up resistor R2 ground connection;
Direct current (DC) bias temperature following circuit, direct current (DC) bias holding circuit, signal amplification output circuit are arranged on circuit board 9, and are fixed on base plate 4 by pillar 7, in housing 8 inner chambers of 4 side's of being contained in cylindrical outer casings of base plate.
DC-DC high-pressure modular is arranged on the base plate of circuit board below.
Protecgulum 1 is used respectively in the rear and front end of the housing 8 of side's cylindrical outer casing, and bonnet 6 seals.Avalanche photodide APD is embedded in the central authorities of protecgulum 1.In direct current (DC) bias temperature following circuit, diode D1 is close to the installation of avalanche photodide APD rear portion, and middle contact portion scribbles interface Heat Conduction Material, as heat-conducting silicone grease, diode D1 temperature and avalanche photodide APD temperature is consistent.
Protecgulum 1, bonnet 6, base plate 4, housing 8, pillar 7 is all made of aluminium, is convenient to detector internal heat and sheds, and reaches as early as possible thermal equilibrium, is beneficial to temperature stabilization.
In Fig. 2, for accelerating avalanche photodide APD heat radiation, protecgulum 1 front end is processed with radiating groove 11, and radiating groove does not connect completely around APD, forms plane.
In Fig. 3, on base plate 3, dig symmetrical strip groove 12, ensureing effectively weight reduction under heat radiation prerequisite.DC-DC high-pressure modular is arranged on base plate 4.Circuit board 9 is connected with base plate 4 by pillar 7.Web member 5 is DB9 joint, except power supply wiring and signal wiring, can also draw many p-wires.Web member 5 is fixed by screws on bonnet 6, is connected with DC-DC high-pressure modular, avalanche photodide APD by wire.
Protecgulum 1, bonnet 6 are connected with the two ends of base plate 4, and base plate 4 is also screwed on housing 8 sidewalls.
In Fig. 4, it is the one-piece construction of rectangle that housing 8 adopts cross section, has reduced web member quantity, and can effectively prevent detector install time stress deformation.Concrete making can directly select corresponding size aluminium section bar as housing.
In Fig. 6, direct current (DC) bias temperature following circuit comprises the constant current source, diode D1, voltage follower circuit, the voltage amplifier circuit that connect in turn.The conduction voltage drop of direct current (DC) bias temperature following circuit when to diode D1 temperature variation changes and carries out differential amplification, and the direct current (DC) bias output of output voltage signal control DC-DC high-pressure modular realizes the temperature following of DC-DC high-pressure modular output direct current (DC) bias.Constant current source output terminal connects diode D1 anode and voltage follower circuit, diode D1 plus earth.Voltage follower circuit comprises amplifier U1, and the output terminal of amplifier U1 is connected with the input end of voltage amplifier circuit.
Voltage amplifier circuit comprises amplifier U2, resistance R 3 and adjustable resistance R4, R5.The adjustable end of positive input termination adjustable resistance R4 of amplifier U2, for established standards voltage.The diode D1 conduction voltage drop that voltage amplifier circuit is followed normal voltage and follow circuit carries out differential amplification.
As Fig. 7, voltage protection circuit comprises diode D2, amplifier U3 and adjustable resistance R6.The adjustable end of amplifier U3 positive input termination adjustable resistance R6, negative input end is connected diode D2 negative electrode with output terminal, composition voltage follower.The anodic bonding DC-DC high-pressure modular input end of diode D2.The protection voltage that voltage protection circuit is set is the forward conduction voltage sum of the adjustable terminal voltage of R6 and diode D2.In the time of protection voltage that the voltage of voltage amplifier circuit output is set higher than voltage protection circuit, diode D2 conducting, maintains protection voltage by output voltage.
As Fig. 8, signal amplification output circuit comprises amplifying circuit and comparator circuit.Amplifying circuit comprises first order amplifying circuit and second level amplifying circuit.First order amplifying circuit comprises amplifier U4 and resistance R 8, and adjustable resistance R7 will export to second level amplifying circuit after the voltage signal differential amplification of avalanche photodide APD output.Second level amplifying circuit comprises triode Q1, resistance R 9, and R10, further amplifies signal, makes its signal amplitude be applicable to comparer and uses.Comparator circuit comprises comparer U5, adjustable resistance R11 and capacitor C 1, C2, C3, C4.Comparer U5 positive input terminal connects the adjustable end of R11, sets comparative voltage threshold value, compares with the voltage of amplifying circuit output, finally exports the photon signal of Transistor-Transistor Logic level, exports by web member 6.
The present embodiment utilizes the temperature characterisitic of diode, avalanche photodide APD direct current (DC) bias is carried out to temperature compensation, design in conjunction with mechanical mechanism, avalanche photodide APD is operated in and under constant gain condition, carries out single photon detection, compare with Single-chip Controlling mode detection module with traditional thermostatic control mode detection module, use convenient and volume to reduce.The Design of Mechanical Structure that the utility model uses, is convenient to detecting module heat radiation, reaches as early as possible thermal equilibrium, effectively reduces thermonoise.
The components and parts that this example uses are selected by following:
Resistance: R1:10k Ω, R2:100 Ω, R3:1k Ω, R8:5.1k Ω, R9:2.2k Ω, R10:33 Ω, R4:20k Ω is adjustable, and R5:20k Ω is adjustable, and R6:20k Ω is adjustable, and R7:10k Ω is adjustable, and R11:10k Ω is adjustable;
Electric capacity: C1:1 μ F, C2:10nF, C3:1 μ F, C4:10nF;
Diode: D1:1N4148; D2:1N4148;
Triode: Q1:SS9018
Operational amplifier: U1, U2, U3, U4: be 0P07;
Comparer: U5:MAX913.
Above-described the utility model embodiment, does not form the restriction to the utility model protection domain.Any amendment of doing within spirit of the present utility model and principle, be equal to and replace and improvement etc., within all should being included in claim protection domain of the present utility model.
Claims (10)
1.APD temperature self-adaptation near-infrared single photon sniffer, is characterized in that, comprises avalanche photodide APD, direct current (DC) bias temperature following circuit, direct current (DC) bias holding circuit, signal amplification output circuit, DC-DC high-pressure modular and shell;
Described direct current (DC) bias temperature following circuit, direct current (DC) bias holding circuit are connected with DC-DC high-pressure modular input end;
The negative electrode of described avalanche photodide APD is connected with DC-DC high-pressure modular output terminal by resistance R 1;
The anode of described avalanche photodide APD is connected with signal amplification output circuit;
The anode of described avalanche photodide APD is by pull-up resistor R2 ground connection;
Described shell comprises the barrel-type casing that two ends are sealed by end cap;
Described direct current (DC) bias temperature following circuit, direct current (DC) bias holding circuit, signal amplification output circuit, DC-DC high-pressure modular are installed in cylindrical cavity;
Described avalanche photodide APD is embedded on the end cap of shell.
2. APD temperature self-adaptation near-infrared single photon sniffer according to claim 1, is characterized in that, the responsiveness of described avalanche photodide APD 1A/W and more than.
3. APD temperature self-adaptation near-infrared single photon sniffer according to claim 1, is characterized in that, described direct current (DC) bias temperature following circuit comprises constant current source, diode D1, voltage follower circuit and voltage amplifier circuit; Described constant current source output connects respectively diode D1 anode and voltage follower circuit, diode D1 plus earth; Voltage follower circuit is connected with voltage amplifier circuit.
4. APD temperature self-adaptation near-infrared single photon sniffer according to claim 3, is characterized in that, described diode D1 is close to the rear portion of avalanche photodide APD and installs.
5. APD temperature self-adaptation near-infrared single photon sniffer according to claim 4, is characterized in that, install at the rear portion that described diode D1 is close to avalanche photodide APD by interface Heat Conduction Material.
6. APD temperature self-adaptation near-infrared single photon sniffer according to claim 1, is characterized in that, described direct current (DC) bias holding circuit comprises diode D2, amplifier U3 and adjustable resistance R6; The adjustable end of the positive input termination adjustable resistance R6 of described amplifier U3, the negative input end of amplifier U3 is connected diode D2 negative electrode with output terminal, composition voltage follower.
7. APD temperature self-adaptation near-infrared single photon sniffer according to claim 1, is characterized in that, described signal amplification output circuit comprises amplifying circuit and comparator circuit; Described amplifying circuit is two-stage structure for amplifying, and first order amplifying circuit uses amplifier U4 tentatively to amplify APD signal, and second level amplifying circuit uses triode Q1 further to amplify APD signal; In described comparator circuit, comparer U5 positive input terminal connects the adjustable end of R11, sets comparative voltage threshold value, compares with the voltage of amplifying circuit output, finally exports the photon signal of Transistor-Transistor Logic level.
8. APD temperature self-adaptation near-infrared single photon sniffer according to claim 1, is characterized in that, described shell comprises protecgulum, bonnet, housing; Described housing is the cylindrical member of both ends open, and protecgulum sealing is arranged on housing front opening place, and described avalanche photodide APD is embedded in protecgulum end face, and bonnet sealing is arranged on housing open rearward end place.
9. APD temperature self-adaptation near-infrared single photon sniffer according to claim 8, is characterized in that, the outer face of described protecgulum is provided with radiating groove.
10. APD temperature self-adaptation near-infrared single photon sniffer according to claim 1, is characterized in that, described shell and end cap are made up of the aluminium of good heat conductivity.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320859186.7U CN203732166U (en) | 2013-12-20 | 2013-12-20 | APD temperature self-adaptive near-infrared single-photon detection apparatus |
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| CN201320859186.7U CN203732166U (en) | 2013-12-20 | 2013-12-20 | APD temperature self-adaptive near-infrared single-photon detection apparatus |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103728030A (en) * | 2013-12-20 | 2014-04-16 | 中国科学院合肥物质科学研究院 | Self-adaptive near-infrared single-photon detector for APD temperature |
| CN108155876A (en) * | 2016-12-06 | 2018-06-12 | 株式会社村田制作所 | High-frequency model and communication device |
| CN110715728A (en) * | 2015-09-30 | 2020-01-21 | 意法半导体(R&D)有限公司 | Sensing device with photosensitive detector |
-
2013
- 2013-12-20 CN CN201320859186.7U patent/CN203732166U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103728030A (en) * | 2013-12-20 | 2014-04-16 | 中国科学院合肥物质科学研究院 | Self-adaptive near-infrared single-photon detector for APD temperature |
| CN110715728A (en) * | 2015-09-30 | 2020-01-21 | 意法半导体(R&D)有限公司 | Sensing device with photosensitive detector |
| CN110715728B (en) * | 2015-09-30 | 2022-04-19 | 意法半导体(R&D)有限公司 | Sensing device with photosensitive detector |
| CN108155876A (en) * | 2016-12-06 | 2018-06-12 | 株式会社村田制作所 | High-frequency model and communication device |
| CN108155876B (en) * | 2016-12-06 | 2021-07-06 | 株式会社村田制作所 | High-frequency module and communication device |
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Granted publication date: 20140723 |