CN203726975U - Wire mesh - Google Patents
Wire mesh Download PDFInfo
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- CN203726975U CN203726975U CN201320887153.3U CN201320887153U CN203726975U CN 203726975 U CN203726975 U CN 203726975U CN 201320887153 U CN201320887153 U CN 201320887153U CN 203726975 U CN203726975 U CN 203726975U
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Abstract
The utility model discloses a wire mesh. The wire mesh comprises a peripheral grid area and a middle pattern area. The middle pattern area comprises pattern grid areas and pattern grid wire areas. The peripheral grid area and the pattern grid areas are in grid structures formed by connection of polygonal grid arrays. The pattern grid areas are formed by wire segment arrays connecting the two adjacent pattern grid areas. The wire diameter size of grid wires of the peripheral grid area is larger than or equal to the wire diameter size of grid wires of the pattern grid areas, and the wire diameter size of grid wires of the pattern grid areas is larger than or equal to the wire diameter size of wire segments of the wire segment arrays of the pattern grid wire areas. According to the wire mesh, the wire mesh is in an integrated forming structure, woven longitude and latitude nodes are absent, defects caused by woven longitude and latitude nodes of traditional wire meshes can be overcome, the wire diameter size of the wire mesh is reduced successively according to the sequence of the peripheral grid area, the pattern grid areas and the pattern grid wire areas, the wire mesh strength is improved, and the blockage of the wire segments of the pattern grid wire areas to slurry is reduced.
Description
Technical field
The utility model relates to a kind of woven wire, in particular to a kind of woven wire of printing solar cell positive electrode.
Background technology
That solar energy has is harmless, the energy is huge (arrives every year the lip-deep solar radiant energy of the earth and is approximately equivalent to 130,000,000,000,000 tons of coals, its total amount belongs to the maximum energy that can develop in the world now), the advantage such as can utilize for a long time, in addition earth energy shortage, the storage capacity of the non-renewable resources such as coal and oil reduces day by day, and solar energy becomes one of energy that people extensively utilize in recent years.Solar cell is one of core representative of Application of Solar Energy.
Printing solar cell positive electrode need to be used mask plate, traditional masks plate is to apply or overlay on the surface of the silk screen such as woven wire or polyester webs of Weaving type the composite mask plate that one deck emulsion forms, but the composite mask plate that this type of Weaving type silk screen forms has the node of Weaving type, when printing, can cause lower slurry uneven, thereby affect the transformation efficiency of solar cell.
The utility model is mainly to propose a kind of silk screen for above problem, solves preferably the above problem.
Utility model content
In view of this, need to overcome at least one in above-mentioned prior art defect.
The utility model provides a kind of woven wire, comprise peripheral meshes district and center pattern district, described center pattern district comprises pattern grid regions and pattern grid line district, it is characterized in that: described peripheral meshes district and described pattern grid regions are to interconnect by polygonal mesh array the network forming, described pattern grid line district is made up of the array of line segments that connects adjacent two described pattern grid regions, the wire diameter size of described peripheral meshes district grid lines is more than or equal to the wire diameter size of described pattern grid regions grid lines, the wire diameter size of described pattern grid regions grid lines is more than or equal to the wire diameter size of the line segment of described pattern grid line district array of line segments, the described woven wire structure that is formed in one, without the longitude and latitude node of Weaving type.Can overcome the defect that traditional screen knitting type longitude and latitude node brings.
Described in prior art in this patent background technology, the mask plate of tradition use is to apply or overlay on the surface of the silk screen such as woven wire or polyester webs of Weaving type the composite mask plate that one deck emulsion forms, but the composite mask plate that this type of Weaving type silk screen forms has the node of Weaving type, when printing, can cause lower slurry uneven, thereby affect the transformation efficiency of battery.The woven wire that the utility model provides has integrated structure, without the longitude and latitude node of Weaving type, can overcome the defect that traditional screen knitting type longitude and latitude node brings, the wire diameter size of woven wire reduces successively by the order in peripheral meshes district, pattern grid regions, pattern grid line district, can reduce pattern grid line district line segment stopping the life-span of simultaneously improving woven wire slurry.
In addition, also there is following additional technical feature according to the disclosed woven wire of the utility model:
Further, described polygon is rectangle or regular hexagon.
Further, described woven wire also comprises outside, and described outside is the non-net region that is arranged on described peripheral meshes district periphery.The width of described outside is 0.5 ~ 2mm, described outside is played and is reinforced peripheral meshes district, prevents that even fracture phenomena from appearring being out of shape in the periphery in peripheral meshes district, described outside and described peripheral meshes district are one-body molded, and have identical material with described peripheral meshes district.
Because silk screen is very thin, its thickness is generally in 10 μ m ~ 30 μ m scopes, even breaks so the silk screen of moulding is easy to distortion, can prevent well that silk screen distortion from even breaking behind the periphery design outside in silk screen peripheral meshes district.
Alternatively, described outside is one-body molded with peripheral meshes district and have identical thickness with peripheral meshes district, outside is entity structure (being one deck nickel or nickel-base alloy), or in the entity structure of described outside, being provided with the pattern of manhole or polygon through hole, described through-hole pattern is evenly distributed in the entity structure of described outside.
Further, the wire diameter size r1 scope of the line segment of described pattern grid line district array of line segments is 8 μ m≤r1≤25 μ m.
Further, the wire diameter size r2 scope of described pattern grid regions grid lines is 12 μ m≤r2≤30 μ m.
Further, the wire diameter size r3 scope of described peripheral meshes district grid lines is 15 μ m≤r3≤35 μ m.
Further, the spacing d1 scope between the adjacent segments of described pattern grid line district array of line segments is 40 μ m≤d1≤100 μ; The line segment length size d2 scope of described pattern grid line district array of line segments is 60 μ m≤d2≤180 μ m.
Further, the polygon that forms described grid array is rectangle, and in described peripheral meshes district rectangular mesh array, the length dimension d3 scope of rectangle is 40 μ m≤d3≤100 μ m; In described peripheral meshes district rectangular mesh array, the width dimensions d4 scope of rectangle is 30 μ m≤d4≤90 μ m.
Further, the polygon that forms described grid array is rectangle, and in the rectangular mesh array of described pattern grid regions, the length dimension d5 scope of rectangle is 40 μ m≤d5≤100 μ m; In the rectangular mesh array of described pattern grid regions, the width dimensions d6 scope of rectangle is 30 μ m≤d6≤90 μ m.
Further, described woven wire is to form by electroforming or etch process.
The wire diameter size of the line segment of described pattern grid line district array of line segments is less than or equal to the wire diameter size of described pattern grid regions grid lines, its objective is the barrier effect of the line segment that reduces pattern grid line district to printing slurry, to reach good lower slurry effect; The wire diameter size object that the wire diameter size of described peripheral meshes district grid lines is more than or equal to described pattern grid regions grid lines is the intensity that strengthens screen net structure, the life-span of improving woven wire; The wire diameter size of pattern grid regions grid lines is between the wire diameter size of peripheral meshes district grid lines and the line segment wire diameter size of pattern grid line district array of line segments, structurally play the effect that transition connects, avoid the line segment in the pattern grid line district that wire diameter size is less to be connected with the grid lines of the larger-size grid regions of wire diameter, improve to a certain extent the life-span of woven wire.
The aspect that the utility model is additional and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present utility model.
Brief description of the drawings
Above-mentioned and/or additional aspect of the present utility model and advantage will become obviously and easily from the following description of the accompanying drawings of embodiments to be understood, wherein:
Figure 1 shows that a kind of woven wire overall structure schematic diagram;
Figure 2 shows that the partial structurtes enlarged diagram in woven wire 12 regions in Fig. 1;
Figure 3 shows that the partial structurtes enlarged diagram in woven wire 13 regions in Fig. 1;
Figure 4 shows that the partial structurtes enlarged diagram in woven wire 31 regions in Fig. 3;
Fig. 5 ~ Figure 7 shows that partial structurtes enlarged diagram in woven wire 13 regions in Fig. 3;
Figure 8 shows that 71 partial structurtes enlarged diagrams in Fig. 7.
In Fig. 1,11 is pattern grid line district, and 12,13 is regional area to be amplified, and 14 is peripheral meshes district, and 15 is outside;
In Fig. 2,21 is pattern grid regions;
In Fig. 3,31 is regional area to be amplified;
In Fig. 4, 41 is the line segment in pattern grid line district, 42 is the grid lines of pattern grid regions, 43 is the grid lines in peripheral meshes district, r1 is the wire diameter size of pattern grid line district line segment 41, r2 is the wire diameter size of pattern grid regions grid lines 42, r3 is the wire diameter size of peripheral meshes district grid lines 43, d1 is the width dimensions between adjacent segments 41, d2 is the length dimension of line segment 41, d3 is the length dimension of rectangle in peripheral meshes district rectangular mesh array, d4 is the width dimensions of rectangle in peripheral meshes district rectangular mesh array, d5 is the length dimension of rectangle in the rectangular mesh array of pattern grid regions, d6 is the width dimensions of rectangle in the rectangular mesh array of pattern grid regions,
In Fig. 7,71 is regional area to be amplified.
Detailed description of the invention
Describe embodiment of the present utility model below in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Be exemplary below by the embodiment being described with reference to the drawings, only for explaining the utility model, and can not be interpreted as restriction of the present utility model.
Inventive concept of the present utility model is as follows, as stated in the Background Art, according in this patent background technology to described in prior art, the mask plate of tradition use is to apply or overlay on the surface of the silk screen such as woven wire or polyester webs of Weaving type the composite mask plate that one deck emulsion forms, but the composite mask plate that this type of Weaving type silk screen forms has the node of Weaving type, when printing, can cause lower slurry uneven.The woven wire that the utility model provides has integrated structure, without the longitude and latitude node of Weaving type, can overcome the defect that traditional screen knitting type longitude and latitude node brings, woven wire provided by the utility model simultaneously, can reduce the barrier effect of grid line to printing slurry, and the life-span of improving woven wire.
Describe below with reference to accompanying drawings the woven wire of printing use of the present utility model, wherein Figure 1 shows that a kind of woven wire overall structure schematic diagram, Fig. 2 ~ Figure 8 shows that partial structurtes enlarged diagram of woven wire.
According to embodiment of the present utility model, as shown in Fig. 1 ~ Fig. 4, the utility model provides a kind of woven wire, comprise peripheral meshes district 14 and center pattern district, center pattern district comprises pattern grid regions 21 and pattern grid line district 11, peripheral meshes district 14 and pattern grid regions 21 are to interconnect by polygonal mesh array the network forming, pattern grid line district 11 is made up of the array of line segments that connects adjacent two described pattern grid regions, the wire diameter size r3 of peripheral meshes district 14 grid lines 43 is more than or equal to the wire diameter size r2 of pattern grid regions grid lines 42, the wire diameter size r2 of pattern grid regions 21 grid lines 42 is more than or equal to the wire diameter size r1 of the line segment 41 of pattern grid line district 11 array of line segments, the woven wire structure that is formed in one, without the longitude and latitude node of Weaving type.
In addition, also there is following additional technical feature according to the disclosed woven wire of the utility model:
According to embodiment of the present utility model, the polygon in polygonal mesh array is rectangle (as shown in Fig. 2～Fig. 6) or regular hexagon (as shown in Fig. 7 ~ Fig. 8).
According to embodiment of the present utility model, as shown in Figure 1, woven wire also comprises outside 15, and outside 15 is for being arranged on the non-grid regions of peripheral meshes district 14 peripheries.
The width of outside 15 is 0.5～2mm, and outside 15 is played and prevented that even fracture phenomena from appearring being out of shape in the periphery in peripheral meshes district 14, and outside 15 is one-body molded with peripheral meshes district 14, and has identical material with peripheral meshes district.
Because silk screen is very thin, its thickness is generally in 10 μ m～30 μ m scopes, even breaks so the silk screen of moulding is easy to distortion, can prevent well that woven wire distortion from even breaking behind the periphery design outside 15 in peripheral meshes district 14.
Outside 15 is one-body molded with peripheral meshes district 14 and have identical thickness with peripheral meshes district 14, outside 15 (is one deck nickel or nickel-base alloy for entity structure, as shown in Figure 1), or in the entity structure of described outside 15, being provided with the pattern (not shown) of manhole or polygon through hole, through-hole pattern is evenly distributed on (not shown) in the entity structure of outside 15.
According to embodiment more of the present utility model, as shown in Figure 4, the line segment 41 wire diameter size r1 scopes of pattern grid line district 11 array of line segments are 8 μ m≤r1≤25 μ m.
According to embodiment more of the present utility model, as shown in Figure 4, the wire diameter size r2 scope of pattern grid regions 21 grid lines 42 is 12 μ m≤r2≤30 μ m.
According to embodiment more of the present utility model, as shown in Figure 4, the wire diameter size r3 scope of peripheral meshes district 14 grid lines 43 is 15 μ m≤r3≤35 μ m.
According to embodiment more of the present utility model, as shown in Figure 4, the spacing d1 scope between the adjacent segments 41 of pattern grid line district 11 array of line segments is 40 μ m≤d1≤100 μ; The line segment 41 length dimension d2 scopes of pattern grid line district 11 array of line segments are 60 μ m≤d2≤180 μ m.
According to embodiment more of the present utility model, as shown in Figure 4, the polygon that forms grid array is rectangle, and in peripheral meshes district 14 rectangular mesh arrays, the length dimension d3 scope of rectangle is 40 μ m≤d3≤100 μ m; In peripheral meshes district rectangular mesh array, the width dimensions d4 scope of rectangle is 30 μ m≤d4≤90 μ m.
According to embodiment more of the present utility model, as shown in Figure 4, the polygon that forms grid array is rectangle, and in the 21 rectangular mesh arrays of pattern grid regions, the length dimension d5 scope of rectangle is 40 μ m≤d5≤100 μ m; In the rectangular mesh array of pattern grid regions, the width dimensions d6 scope of rectangle is 30 μ m≤d6≤90 μ m.
Preferably, as shown in Fig. 2 ~ Fig. 4, according to size range as above, in the line segment 41 length dimension d2 of described pattern grid line district array of line segments, peripheral meshes district 14 rectangular mesh arrays, in the width dimensions d4 of rectangle, pattern grid regions 21 rectangular mesh arrays, the width dimensions d6 three's of rectangle pass is: d2=2d4=2d6; Carefully in the spacing d1 between the line segment 41 of grid line area of the pattern array of line segments, peripheral meshes district 14 rectangular mesh arrays, in the length dimension d3 of rectangle, pattern grid regions 21 rectangular mesh arrays, the length dimension d5 three's of rectangle pass is: d1=d3=d5.
According to embodiment of the present utility model, woven wire is to form by electroforming or etch process.
According to an embodiment of the present utility model, the wire diameter size r1 of the line segment 41 of pattern grid line district 11 array of line segments, the wire diameter size r2 of pattern grid regions 21 grid lines 42, the wire diameter size r3 of peripheral meshes district 14 grid lines 43, spacing d1 between the adjacent segments 41 of pattern grid line district 11 array of line segments, the line segment 41 length dimension d2 of pattern grid line district 11 array of line segments, the length dimension d3 of rectangle in peripheral meshes district 14 rectangular mesh arrays, the width dimensions d4 of rectangle in peripheral meshes district 14 rectangular mesh arrays, the length dimension d5 of rectangle in the 21 rectangular mesh arrays of pattern grid regions, in the 21 rectangular mesh arrays of pattern grid regions, the width dimensions d6 of rectangle is respectively: r1=16 μ m, r2=20 μ m, r3=25 μ m, d1=d3=d5=80 μ m, d2=2d4=2d6=130 μ m.
According to an embodiment of the present utility model, above-mentioned size is respectively: r1=19 μ m, r2=25 μ m, r3=28 μ m, d1=d3=d5=60 μ m, d2=2d4=2d6=100 μ m
According to an embodiment of the present utility model, above-mentioned size is respectively: r1=22 μ m, r2=27 μ m, r3=30 μ m, d1=80 μ m, d2=100 μ m, d3=65 μ m, d4=50 μ m, d5=60 μ m, d6=45 μ m.
According to an embodiment of the present utility model, above-mentioned size is respectively: r1=10 μ m, r2=15 μ m, r3=18 μ m, d1=d3=d5=45 μ m, d2=2d4=2d6=80 μ m.
According to an embodiment of the present utility model, above-mentioned size is respectively: r1=25 μ m, r2=30 μ m, r2=33 μ m, d1=d3=d5=60 μ m, d2=2d4=2d6=150 μ m.
According to an embodiment of the present utility model, above-mentioned size is respectively: r1=13 μ m, r2=17 μ m, r2=20 μ m, d1=d3=d5=50 μ m, d2=2d4=2d6=120 μ m.
Fig. 3, Fig. 5 ~ Figure 7 shows that several structure for amplifying schematic diagrames of 13 regional areas in Fig. 1.
As shown in Figure 5, the length of the line segment in pattern grid line district 11 array of line segments is relatively long, so can ensure the lower slurry amount in electrode of solar battery printing process.
As shown in Figure 6, the spacing in pattern grid line district 11 array of line segments between adjacent segments is relatively wide, so can more effectively reduce line segment the stopping slurry in pattern grid line district 11.
The district of peripheral meshes shown in Fig. 7 14 and pattern grid regions 21 are regular hexagonal cell array and interconnect the network forming, orthohexagonal size dimension scope is less than or equal to 100 μ m for being more than or equal to 30 μ m, wire diameter size r1, r2, r3 as shown in Figure 8, and the line segment 41 length dimension d2 scopes of spacing d1 between the line segment 41 of pattern grid line district 11 array of line segments, pattern grid line district 11 array of line segments are with the scope of d1 described above, d2.
Woven wire provided by the utility model can overcome the defect that traditional screen knitting type longitude and latitude node brings.The wire diameter size r1 of pattern grid line district 11 line segments is relatively little, can effectively reduce the barrier effect of grid line to slurry; The relatively large intensity that can strengthen woven wire of wire diameter size r3 of peripheral meshes district 14 grid lines, is difficult for breaking afterwards and in printing process at the net that stretches tight, thereby improves the life-span of woven wire; The wire diameter size r2 of pattern grid regions 21 grid lines is between the wire diameter size r3 of peripheral meshes district grid lines and the line segment wire diameter size r1 of pattern grid line district array of line segments, structurally play the effect that transition connects, avoid the line segment in the pattern grid line district that wire diameter size is less to be connected with the grid lines of the larger-size grid regions of wire diameter, improve to a certain extent the life-span of woven wire.
Although detailed description of the invention of the present utility model is described in detail with reference to multiple illustrative examples of the present utility model, but it must be understood that, those skilled in the art can design multiple other improvement and embodiment, these improve and embodiment by within dropping on the spirit and scope of the utility model principle.Particularly, within the scope of aforementioned open, accompanying drawing and claim, can aspect the layout of parts and/or subordinate composite configuration, make rational modification and improvement, and can not depart from spirit of the present utility model.Except modification and the improvement of parts and/or layout aspect, its scope is limited by claims and equivalent thereof.
Claims (10)
1. a woven wire, comprises peripheral meshes district and center pattern district, and described center pattern district comprises pattern grid regions and pattern grid line district, it is characterized in that:
Described peripheral meshes district and described pattern grid regions are to interconnect by polygonal mesh array the network forming, described pattern grid line district is made up of the array of line segments that connects adjacent two described pattern grid regions, the wire diameter size of described peripheral meshes district grid lines is more than or equal to the wire diameter size of described pattern grid regions grid lines, the wire diameter size of described pattern grid regions grid lines is more than or equal to the wire diameter size of the line segment of described pattern grid line district array of line segments, the described woven wire structure that is formed in one, without the longitude and latitude node of Weaving type.
2. woven wire according to claim 1, is characterized in that, described polygon is rectangle or regular hexagon.
3. woven wire according to claim 1 and 2, is characterized in that, described woven wire also comprises outside, and described outside is the non-grid regions that is arranged on described peripheral meshes district periphery.
4. woven wire according to claim 1, is characterized in that, the wire diameter size r1 scope of the line segment of described pattern grid line district array of line segments is 8 μ m≤r1≤25 μ m.
5. woven wire according to claim 1, is characterized in that, the wire diameter size r2 scope of described pattern grid regions grid lines is 12 μ m≤r2≤30 μ m.
6. woven wire according to claim 1, is characterized in that, the wire diameter size r3 scope of described peripheral meshes district grid lines is 15 μ m≤r3≤35 μ m.
7. woven wire according to claim 1, is characterized in that, the spacing d1 scope between the adjacent segments of described pattern grid line district array of line segments is 40 μ m≤d1≤100 μ; The line segment length size d2 scope of described pattern grid line district array of line segments is 60 μ m≤d2≤180 μ m.
8. woven wire according to claim 2, is characterized in that, the polygon that forms described grid array is rectangle, and in described peripheral meshes district rectangular mesh array, the length dimension d3 scope of rectangle is 40 μ m≤d3≤100 μ m; In described peripheral meshes district rectangular mesh array, the width dimensions d4 scope of rectangle is 30 μ m≤d4≤90 μ m.
9. woven wire according to claim 2, is characterized in that, the polygon that forms described grid array is rectangle, and in the rectangular mesh array of described pattern grid regions, the length dimension d5 scope of rectangle is 40 μ m≤d5≤100 μ m; In the rectangular mesh array of described pattern grid regions, the width dimensions d6 scope of rectangle is 30 μ m≤d6≤90 μ m.
10. woven wire according to claim 1, is characterized in that, described woven wire is to form by electroforming or etch process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320887153.3U CN203726975U (en) | 2013-12-31 | 2013-12-31 | Wire mesh |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320887153.3U CN203726975U (en) | 2013-12-31 | 2013-12-31 | Wire mesh |
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| Publication Number | Publication Date |
|---|---|
| CN203726975U true CN203726975U (en) | 2014-07-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201320887153.3U Expired - Fee Related CN203726975U (en) | 2013-12-31 | 2013-12-31 | Wire mesh |
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| CN (1) | CN203726975U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103722871A (en) * | 2013-12-31 | 2014-04-16 | 昆山允升吉光电科技有限公司 | Wire mesh |
-
2013
- 2013-12-31 CN CN201320887153.3U patent/CN203726975U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103722871A (en) * | 2013-12-31 | 2014-04-16 | 昆山允升吉光电科技有限公司 | Wire mesh |
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