CN203707092U - Quartz plug-in member applied to quartz air inlet opening of low pressure epitaxial chamber - Google Patents
Quartz plug-in member applied to quartz air inlet opening of low pressure epitaxial chamber Download PDFInfo
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- CN203707092U CN203707092U CN201320891241.0U CN201320891241U CN203707092U CN 203707092 U CN203707092 U CN 203707092U CN 201320891241 U CN201320891241 U CN 201320891241U CN 203707092 U CN203707092 U CN 203707092U
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- plug
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- gas outlet
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Abstract
The utility model discloses a quartz plug-in member applied to a quartz air inlet opening of a low pressure epitaxial chamber. The quartz plug-in member is shaped like a triangle, an inner side top point and an outer side top point form camber line connection, a dividing wall is placed between the inner side top point and the outer side top point, and therefore the quartz plug-in member is divided into an inner side air outlet opening and an outer side air outlet opening. The inner side air outlet opening is a fully-open opening, and the air outlet side of the outer air outlet opening is provided with an isosceles triangle opening after being closed. The triangle-shaped slit quartz plug-in member disclosed in the utility model has a special flow guide function of gas, a reactant gas flow can be increased at a central position in processes where a film is formed through technologies, and therefore the central part of a wafer can be increased in dosage concentration and a whole wafer face can be improved in dosage uniformity.
Description
Technical field
The utility model relates to integrated circuit and manufactures field, particularly relates to the quartzy plug-in unit for the quartzy air inlet in low pressure epitaxial chamber.
Background technology
Low pressure epitaxial chamber, is the principle of using chemical vapour deposition (CVD), grows one deck monocrystalline silicon at crystal column surface.The gas of participating in reaction has dichloro-dihydro silicon, hydrogen chloride, borine or phosphine etc.Wherein dichloro-dihydro silicon is mainly used in monocrystalline silicon growth, and borine or phosphine, for adulterating at the monocrystalline silicon generating, are adjusted its resistivity.
On the air inlet of low pressure epitaxial chamber, quartzy plug-in unit (insert) is installed, its effect is gas flow guiding, prevents metallic pollution and prevents that particle from producing.
The low pressure epitaxial chamber using at present, in actual technical process, in the time of outer layer growth, wafer rotates.Because consumption reaction gas is than very fast in course of reaction, the fast quick depletion of gas concentration, therefore the gas concentration in wafer left side is high more a lot of than crystal circle center.Result can find that the uniform doping in wafer face is not good, and particularly, at the center position of wafer, doping content is inadequate.
Utility model content
The technical problems to be solved in the utility model is to provide a kind of quartzy plug-in unit for the quartzy air inlet in low pressure epitaxial chamber, and it can improve the uniform doping in wafer face.
For solving the problems of the technologies described above, quartzy plug-in unit for the quartzy air inlet in low pressure epitaxial chamber of the present utility model, structure triangular in shape, summit, inner side is connected with outer point camber line, there is a dividing wall centre, this quartz plug-in unit is divided into gas outlet, inner side and gas outlet, outside, and gas outlet, inner side is full open type, after the side seal of giving vent to anger of gas outlet, outside closes, offers isosceles triangle opening.
Triangle slit quartz plug-in unit of the present utility model, possesses the special diversion function of gas, can make technique film forming time, the air-flow of reacting gas is increased in center, so just increase the doping content of crystal circle center position, make goods crystal column surface generate monocrystalline silicon thin film in doping content more even, thereby improved the uniform doping in whole wafer face.
Accompanying drawing explanation
Fig. 1 is the front view of quartzy plug-in unit of the present utility model.
Fig. 2 is the end view of quartzy plug-in unit of the present utility model.
Fig. 3 is the top view of quartzy plug-in unit of the present utility model.
Fig. 4 is the installation site (dotted line circle shown in position) of quartzy plug-in unit of the present utility model in low pressure extension cavity.
Fig. 5 installs after quartzy plug-in unit of the present utility model, and reaction gas flow improves schematic diagram.
Fig. 6 is the puncture voltage comparison (x direction of principal axis) that uses the product after quartzy plug-in unit of the present utility model.
Fig. 7 is the puncture voltage comparison (y direction of principal axis) that uses the product after quartzy plug-in unit of the present utility model.
Embodiment
Understand for technology contents of the present utility model, feature and effect being had more specifically, now by reference to the accompanying drawings, details are as follows:
The quartzy plug-in unit of the quartzy air inlet for low pressure epitaxial device of the present utility model, structure triangular in shape, T-1030, T-1630S, T-2230, T-2630, T8630 series that material can be used Toshiba to produce, or Heralux, Heralux-LA, Heralux-E, the Heralu-EL series of SEQ production, or NP, HR, the HR-P series of NSG production, or GE214, GE124, GE244, the GE224 series of GE production.
As Figure 1-3, the overall dimensions of the quartzy plug-in unit of the present embodiment is: the wide a=100 ± 10mm in outside, the wide b=40 ± 5mm in inner side, long c=130 ± 5mm, thickness d=17 ± 1mm.The centre of quartz plug-in unit is a dividing wall, is divided into gas outlet, inner side and gas outlet, outside, and the wide e=55 ± 5mm in gas outlet, inner side, is full open type, the wide f=70 ± 7mm in gas outlet, outside.After the side seal of giving vent to anger of gas outlet, outside closes, offer isosceles triangle opening, triangular apex is i=6.5 ± 1mm apart from quartzy plug-in unit base, triangle bottom side length j=10 ± 3mm, the high h=55.0 ± 8.5mm of triangle.Inside plug-in unit, summit is connected with outer point camber line.Quartz wall thickness g=4.0 ± 2.0mm.
According to above-mentioned dimensioned air inlet quartz plug-in unit (j=6.5mm, h=63.5mm), be arranged on application material Centura5200 equipment processed the variation of test doping content.As seen from Figure 5, used after quartzy plug-in unit of the present utility model, the gas concentration of air outlet side, on y axle, concentrates from edge to center position, has finally obtained better inhomogeneity process results.
After experiment, the final BV(puncture voltage of device on wafer) value distribution map is shown in Fig. 6 and Fig. 7, can see that near crystal circle center position, BV value has obtained reduction, more approaches mean value.
Claims (3)
1. for the quartzy plug-in unit of the quartzy air inlet in low pressure epitaxial chamber, it is characterized in that, structure triangular in shape, summit, inner side is connected with outer point camber line, there is a dividing wall centre, this quartz plug-in unit is divided into gas outlet, inner side and gas outlet, outside, and gas outlet, inner side is full open type, after the side seal of giving vent to anger of gas outlet, outside closes, offers isosceles triangle opening.
2. quartzy plug-in unit according to claim 1, it is characterized in that, material comprises T-1030, T-1630S, T-2230, T-2630, the T8630 series that Toshiba produces, Heralux, Heralux-LA, Heralux-E, Heralu-EL series that SEQ produces, NP, HR, HR-P series that NSG produces, and GE214, GE124, GE244, the GE224 series of GE production.
3. quartzy plug-in unit according to claim 1, it is characterized in that wide 100 ± 10mm outside quartzy plug-in unit, the wide 40 ± 5mm in inner side, long 130 ± 5mm, thick 17 ± 1mm, the wide 55 ± 5mm in gas outlet, inner side, the wide 70 ± 7mm in gas outlet, outside, triangular apex is apart from quartzy plug-in unit base 6.5 ± 1mm, triangle bottom side length 10 ± 3mm, the high 55.0 ± 8.5mm of triangle, quartzy wall thickness 4.0 ± 2.0mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320891241.0U CN203707092U (en) | 2013-12-31 | 2013-12-31 | Quartz plug-in member applied to quartz air inlet opening of low pressure epitaxial chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320891241.0U CN203707092U (en) | 2013-12-31 | 2013-12-31 | Quartz plug-in member applied to quartz air inlet opening of low pressure epitaxial chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203707092U true CN203707092U (en) | 2014-07-09 |
Family
ID=51057491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320891241.0U Expired - Fee Related CN203707092U (en) | 2013-12-31 | 2013-12-31 | Quartz plug-in member applied to quartz air inlet opening of low pressure epitaxial chamber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203707092U (en) |
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2013
- 2013-12-31 CN CN201320891241.0U patent/CN203707092U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140709 Termination date: 20151231 |
|
| EXPY | Termination of patent right or utility model |