CN203690253U - Inductively coupled plasma source - Google Patents
Inductively coupled plasma source Download PDFInfo
- Publication number
- CN203690253U CN203690253U CN201320840098.2U CN201320840098U CN203690253U CN 203690253 U CN203690253 U CN 203690253U CN 201320840098 U CN201320840098 U CN 201320840098U CN 203690253 U CN203690253 U CN 203690253U
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- China
- Prior art keywords
- fixed
- plane annular
- coupled
- inductively
- coupled plasma
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009616 inductively coupled plasma Methods 0.000 title claims abstract description 16
- 230000001681 protective effect Effects 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 230000006978 adaptation Effects 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000002788 crimping Methods 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 2
- 230000008878 coupling Effects 0.000 abstract description 8
- 238000010168 coupling process Methods 0.000 abstract description 8
- 238000005859 coupling reaction Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000001939 inductive effect Effects 0.000 abstract 3
- 238000003754 machining Methods 0.000 abstract 2
- 210000002381 plasma Anatomy 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 108010078049 Interferon alpha-2 Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000000869 ion-assisted deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
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- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The utility model discloses an inductively coupled plasma source including a source chamber, a cover plate at one side of the source chamber is fixedly connected with a flange, a plurality of permanent magnets having magnetic poles in staggered arrangement are fixed on the outer surface of the flange, a planar annular inductive coupling coil is fixed on one surface, far away from the flange, of the cover plate, a protective cover is fixed on one side, far away from the flange, of the cover plate, one side of the protective cover is fixedly connected with an adapter fixed in the source chamber, the center end of the planar annular inductive coupling coil is electrically connected with the radio frequency output terminal of the adapter via a conductive belt, and the other end of the planar annular inductive coupling coil is fixedly connected with a metal housing of the adapter. The inductively coupled plasma source can greatly improve the density and uniformity of plasmas, improves the machining rate and uniformity of the plasmas, and correspondingly, improves the machining yield and production power.
Description
Technical field
The utility model relates to a kind of inductively-coupled plasma sources, and this plasma source can be widely used in plasma etching, plasma ion assisted deposition, plasma clean equipment.
Background technology
Traditional inductively-coupled plasma sources adopts planar rondure inductance-coupled coil and cylindricity inductance-coupled coil conventionally, and they respectively have its own pluses and minuses.Planar rondure inductance-coupled coil ion source plasma good uniformity, but exist coupling efficiency low, the problem that plasma density is low; Cylindrical inductance-coupled coil ion source coupling efficiency is high, plasma density is higher, but uniformity is poor.
Summary of the invention
Technical problem to be solved in the utility model is, for prior art deficiency, provides a kind of high density, and the inductively-coupled plasma sources of good uniformity solves in current plasma processes etch rate low, the problem that etching homogeneity is poor.
For solving the problems of the technologies described above, the technical scheme that the utility model adopts is: a kind of inductively-coupled plasma sources, comprise chamber, source, and the cover plate of chamber, described source one side is fixedly connected with flange; Described flange outer surface is fixed with the staggered permanent magnet of polylith magnetic pole; Described cover plate is fixed with plane annular inductance-coupled coil away from the one side of described flange; Described cover plate is fixed with protective cover away from a side of described flange; The described protective cover one side adaptation indoor with being fixed on described source is fixedly connected with; Described plane annular inductance-coupled coil center-side is electrically connected with the radio-frequency (RF) output end of described adaptation by conductive strips, and the described plane annular inductance-coupled coil other end is fixedly connected with described adaptation metal shell.
Described plane annular inductance-coupled coil is connected with described cover plate by filler strip, on described plane annular inductance-coupled coil, is fixed with the crimping of described plane annular inductance-coupled coil is fixed on to the pressure ring on described cover plate; Fixed pan ring-shaped inductors coupling coil better.
On described protective cover, by mounting panel, the axial flow blower that is used to described plane annular inductance-coupled coil heat radiation is installed.
Described adaptation is provided with the outer cover being fixedly connected with described protective cover, for the protection of adaptation.
Described plane annular inductance-coupled coil is formed by the hollow silver-plated aluminum pipe coiling of diameter 4mm ~ 8mm; The diameter of its center circular arc is 16mm ~ 24mm; Spacing between plane annular inductance-coupled coil two adjacent rings is 16 ~ 24mm.
Spacing between adjacent two block permanent magnets is 8mm ~ 20mm.
Compared with prior art, the beneficial effect that the utility model has is: the utility model has carried out reasonably optimizing design to the helix pitch of plane annular inductance-coupled coil, by permanent magnet is set, to form the magnetic field of the multi-direction magnetic line of force, this magnetic field energy reduces the loss that plasma source diffusion chamber wall causes electron amount, by the magnetic field that regulates permanent magnet to produce, be easy to obtain uniform magnetic field, and then obtain uniform plasma; The utility model can improve plasma density and uniformity greatly, and then improves plasma process speed and uniformity, has correspondingly improved processed finished products rate and production capacity.
Accompanying drawing explanation
Fig. 1 is the utility model one embodiment end view;
Fig. 2 is the utility model one embodiment planar rondure inductance-coupled coil schematic diagram.
Embodiment
As shown in Figure 1, the utility model one chamber, embodiment source 10, the cover plate 7 of chamber, source 10 1 sides is fixedly connected with flange 9; Described flange 9 outer surfaces are fixed with the staggered permanent magnet 8 of polylith magnetic pole; Described cover plate 7 is fixed with plane annular inductance-coupled coil 5 away from the one side of described flange 9; Described cover plate 7 is fixed with protective cover 13 away from a side of described flange 9; Described protective cover 13 1 sides are fixedly connected with the adaptation 14 being fixed in chamber, described source 10; Described plane annular inductance-coupled coil 5 center-side are electrically connected with the radio-frequency (RF) output end of described adaptation 14 by conductive strips 3, and described plane annular inductance-coupled coil 5 other ends are fixedly connected with described adaptation 14 metal shells.
Described plane annular inductance-coupled coil 5 is connected with described cover plate 7 by filler strip 6, is fixed with described plane annular inductance-coupled coil 5 crimping are fixed on to the pressure ring 4 on described cover plate 7 on described plane annular inductance-coupled coil 5.
On described protective cover 13, by mounting panel 12, the axial flow blower 11 that is used to described plane annular inductance-coupled coil 5 to dispel the heat is installed; Described adaptation 14 is provided with outer cover 1.
Described plane annular inductance-coupled coil 5 is formed by the hollow silver-plated aluminum pipe coiling of diameter 4mm ~ 8mm, and altogether around 6 circles, the spacing between two adjacent rings is 16 ~ 24mm; The diameter of plane annular inductance-coupled coil 5 center circle arcs is 24mm.
Adaptation is fixedly connected with outer cover 1 one sides by connecting plate 2.
Outer cover is the good conductor metal shell that 2mm is thick, uses screw that outer cover is fixed on protective cover.Because whole plasma origin system is full metal jacket, and Whole Equipment has good earth, makes the radio-frequency electromagnetic Recombinant Interferon α-2b that inductance-coupled coil produces obtain filtering effectively.
Adaptation is arranged on plasma in a steady stream in chamber, like this, both shorten the distance between adaptation and inductance-coupled coil, reduced line loss, again strong radio-frequency electromagnetic is disturbed and shielded completely in chamber, source, reduced the particularly interference of analog signals of equipment and instrument.
Inductance-coupled coil is under high-power long work, and coupling coil temperature sharply raises, and like this resistance that makes coupling coil is increased, and causes that line loss increases.Axial flow blower is used for guaranteeing inductance-coupled coil work at normal temperatures.
In the present embodiment, cover plate 7 is ceramic wafer, and conductive strips 3 are thin copper belt.
Claims (8)
1. an inductively-coupled plasma sources, comprises chamber, source (10), and the cover plate (7) of chamber, described source (10) one sides is fixedly connected with flange (9); It is characterized in that, described flange (9) outer surface is fixed with the staggered permanent magnet of polylith magnetic pole (8); Described cover plate (7) is fixed with plane annular inductance-coupled coil (5) away from the one side of described flange (9); Described cover plate (7) is fixed with protective cover (13) away from a side of described flange (9); Described protective cover (13) one sides are fixedly connected with the adaptation (14) being fixed in chamber, described source (10); Described plane annular inductance-coupled coil (5) center-side is electrically connected with the radio-frequency (RF) output end of described adaptation (14) by conductive strips (3), and described plane annular inductance-coupled coil (5) other end is fixedly connected with described adaptation (14) metal shell.
2. inductively-coupled plasma sources according to claim 1, it is characterized in that, described plane annular inductance-coupled coil (5) is connected with described cover plate (7) by filler strip (6), is fixed with described plane annular inductance-coupled coil (5) crimping is fixed on to the pressure ring (4) on described cover plate (7) on described plane annular inductance-coupled coil (5).
3. inductively-coupled plasma sources according to claim 1 and 2, is characterized in that, the upper axial flow blower (11) that is used to described plane annular inductance-coupled coil (5) heat radiation that is provided with by mounting panel (12) of described protective cover (13).
4. inductively-coupled plasma sources according to claim 3, is characterized in that, described adaptation (14) is provided with the outer cover (1) being fixedly connected with described protective cover (13).
5. inductively-coupled plasma sources according to claim 1, is characterized in that, described plane annular inductance-coupled coil (5) is formed by the hollow silver-plated aluminum pipe coiling of diameter 4mm ~ 8mm.
6. inductively-coupled plasma sources according to claim 5, is characterized in that, the diameter of described plane annular inductance-coupled coil (5) center circle arc is 16mm ~ 24mm.
7. inductively-coupled plasma sources according to claim 6, is characterized in that, the spacing between described plane annular inductance-coupled coil (5) two adjacent rings is 16 ~ 24mm.
8. inductively-coupled plasma sources according to claim 1, is characterized in that, the spacing between adjacent two block permanent magnets (8) is 8mm ~ 20mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320840098.2U CN203690253U (en) | 2013-12-19 | 2013-12-19 | Inductively coupled plasma source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320840098.2U CN203690253U (en) | 2013-12-19 | 2013-12-19 | Inductively coupled plasma source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203690253U true CN203690253U (en) | 2014-07-02 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320840098.2U Expired - Lifetime CN203690253U (en) | 2013-12-19 | 2013-12-19 | Inductively coupled plasma source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203690253U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742204A (en) * | 2014-12-10 | 2016-07-06 | 中微半导体设备(上海)有限公司 | Heater for plasma processing device |
| CN106920732A (en) * | 2015-12-25 | 2017-07-04 | 中微半导体设备(上海)有限公司 | A kind of electrode structure and ICP etching machines |
-
2013
- 2013-12-19 CN CN201320840098.2U patent/CN203690253U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742204A (en) * | 2014-12-10 | 2016-07-06 | 中微半导体设备(上海)有限公司 | Heater for plasma processing device |
| CN105742204B (en) * | 2014-12-10 | 2019-01-18 | 中微半导体设备(上海)有限公司 | Heater for plasma treatment appts |
| CN106920732A (en) * | 2015-12-25 | 2017-07-04 | 中微半导体设备(上海)有限公司 | A kind of electrode structure and ICP etching machines |
| CN106920732B (en) * | 2015-12-25 | 2018-10-16 | 中微半导体设备(上海)有限公司 | A kind of electrode structure and ICP etching machines |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140702 |