CN203658612U - Lithium niobate waveguide chip - Google Patents
Lithium niobate waveguide chip Download PDFInfo
- Publication number
- CN203658612U CN203658612U CN201320755865.XU CN201320755865U CN203658612U CN 203658612 U CN203658612 U CN 203658612U CN 201320755865 U CN201320755865 U CN 201320755865U CN 203658612 U CN203658612 U CN 203658612U
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- Prior art keywords
- lithium niobate
- waveguide
- amorphous silicon
- thickness
- waveguide chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 15
- 230000003287 optical effect Effects 0.000 abstract description 24
- 239000013307 optical fiber Substances 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 8
- 238000012360 testing method Methods 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000004891 communication Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009510 drug design Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000010200 validation analysis Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
A lithium niobate waveguide chip uses a hydrogenated amorphous silicon to prepare a waveguide structure on a lithium niobate substrate, and uses a high refractive index of the amorphous silicon to effectively reduce a size of a waveguide, so as to decrease a gap between metal electrodes on a lithium niobate optical modulator based on the lithium niobate waveguide chip, and further to make a needed modulation voltage be quite low. Preferably, the hydrogenated amorphous silicon is used to prepare the lithium niobate waveguide chip, wherein a Si:H chain is provided so as to reduce an optical loss. The thickness of the hydrogenated amorphous silicon can be adjusted so as to maximize a photoelectric effect of a device while a waveguide size is guaranteed. By controlling the thickness of the silicon dioxide and the thickness of the metal electrode, the good RF matching can be guaranteed, and an optical fiber interface connected to the outside is realized by a waveguide line passing through a waveguide layer; and since the waveguide line is totally in the waveguide layer, the metal area enough for packaging or testing is guaranteed.
Description
Technical field
The utility model relates to a kind of fiber-optic communications traffic communications field, specifically a kind of lithium niobate waveguide chip.
Background technology
The main function of photomodulator is insignificant continuous light wave to convert to the light signal of high-frequency load effective information.Due to the high photoelectric effect of lithium niobate material, lithium niobate optical modulator has become most popular photomodulator in existing system.The chief component of lithium niobate optical modulator is lithium niobate waveguide chip, lithium niobate waveguide chip is carried out to certain packaging technology and just can obtain lithium niobate optical modulator.
Existing lithium niobate waveguide chip is to be mainly prepared from by the mode such as titanium doped, but because contrast of refractive index is not high, the waveguide dimensions of lithium niobate waveguide chip is generally larger.This just causes the electrode separation of lithium niobate optical modulator larger, thereby just needs higher voltage to guarantee that enough modulation drive field intensity, or realizes enough modulator phase place variations by increasing the length of modulation areas.Adopt any mode all can strengthen to a certain extent the difficulty of industry preparation, also caused the waste of resource.
In prior art, also someone proposes to use the silicon nitride material of high silicon amount to be added in the technical scheme of improving the larger-size deficiency of lithium niobate waveguide chip in titanium doped lithium niobate waveguide, and then improves the size of lithium niobate optical modulator.If the patent No. is " CN101620296A ", patent name is " high confinement waveguide on a kind of photoelectricity substrate ".Although this waveguide utilizes the high refraction contrast degree of silicon nitride material itself to reach the effect that reduces waveguide dimensions to a certain extent, but be communicated with effect in order to obtain good light, need the silicon nitride waveguides use that combines with the two-layer waveguide of titanium doped lithium niobate waveguide, finally cause the size of whole lithium niobate waveguide chip in fact really not dwindled, and because the refractive index of silicon nitride is not high too many with respect to lithium niobate, so the physical size effect of optimization of this design is not fine.
Utility model content
For this reason, technical problem to be solved in the utility model is that the size of lithium niobate waveguide chip in prior art is large, preparation technology is comparatively complicated, thereby it is cheap to propose a kind of manufacturing price, lithium niobate waveguide chip size is little, required modulation electric is forced down, and maximizes photoelectric a kind of lithium niobate waveguide chip of device.For solving the problems of the technologies described above, the utility model adopts following technical scheme to realize.
A kind of lithium niobate waveguide chip, at the bottom of comprising lithium niobate base, and is set in turn in the suprabasil amorphous silicon layer of described lithium niobate, silicon dioxide layer and metal electrode; Wherein, the thickness of described amorphous silicon layer is less than the thickness at the bottom of described lithium niobate base, at the bottom of described lithium niobate base and described amorphous silicon layer jointly form waveguide; On described silicon dioxide layer, form electrode fill area, described metal electrode is arranged in described electrode fill area.
Described amorphous silicon layer thickness is 70nm-200nm further.
Described amorphous silicon layer thickness is 70nm-150nm further.
Described silicon dioxide layer thickness is 1um-2um further.
Described amorphous silicon layer is hydrogenated amorphous silicon layer further.
Technique scheme of the present utility model has the following advantages compared to existing technology:
(1) a kind of lithium niobate waveguide chip described in the utility model, use amorphous silicon to prepare lithium niobate waveguide chip, due to the refractive index of amorphous silicon superelevation, by the thickness optimization optical loss of rational design amorphous silicon, strengthen photoelectric effect, and then can reduce the spacing between metal electrode in lithium niobate optical modulator, and then significantly reduce to realize low voltage signal and modulate required modulation length, thereby lithium niobate optical modulator chip size can significantly be reduced.Whole lithium niobate waveguide chip only needs a waveguide just can realize and extraneous optical fiber communication simultaneously, without the gradual change conversion between multiple waveguides and waveguide and waveguide, has also reduced to a certain extent the size of lithium niobate waveguide chip.
(2) a kind of lithium niobate waveguide chip described in the utility model, preferably uses amorphous silicon hydride to make lithium niobate waveguide chip, and it has comprised a large amount of Si:H chains, and the existence of its Si:H chain can reduce optical loss.
(3) a kind of lithium niobate waveguide chip described in the utility model, by controlling the thickness of silicon dioxide and the thickness of metal electrode, can guarantee good radio-frequency match, and the optical fiber interface being connected with the external world is realized by the waveguide wire through ducting layer, because above-mentioned waveguide wire is all at ducting layer, can stop again the metallic region of encapsulation or test.In preparation process, cannot directly carry out probe test with respect to traditional lithium niobate optical modulator chip simultaneously or realize chip connecting, need on chip, use Twi-lithography step could realize the loaded down with trivial details step that metal connects completely, save process, simplify flow process, can obtain good economic benefit.
Accompanying drawing explanation
For content of the present utility model is more likely to be clearly understood, according to specific embodiment of the utility model also by reference to the accompanying drawings, the utility model is described in further detail, wherein below
Fig. 1 is lithium niobate waveguide chip structural drawing described in the utility model;
Fig. 2 is the connected mode schematic diagram of lithium niobate waveguide chip described in the utility model and optical fiber.
In figure, Reference numeral is expressed as: at the bottom of 1-lithium niobate base, and 2-amorphous silicon layer, 3-silicon dioxide layer, 4-metal electrode, 7-waveguide wire, 8-optical fiber.
Embodiment
The present embodiment provides a kind of lithium niobate waveguide chip, as shown in Figure 1, comprises at the bottom of lithium niobate base 1, and is set in turn in the suprabasil amorphous silicon layer 2 of described lithium niobate, silicon dioxide layer 3 and metal electrode 4; Wherein, the thickness of described amorphous silicon layer 2 is less than at the bottom of described lithium niobate base 1 thickness, at the bottom of described lithium niobate base 1 and described amorphous silicon layer 2 is common forms waveguides; On described silicon dioxide layer 3, form electrode fill area, described metal electrode 4 is arranged in described electrode fill area.
The present embodiment selects amorphous silicon to form waveguide moulding at the bottom of lithium niobate base as high-index material.The refractive index of amorphous silicon material itself is not only higher than other general materials, also far above silicon nitride material.The refractive index of silicon nitride material is 2.2, and the refractive index of amorphous silicon has reached 3.5, and this crystal property of amorphous silicon is greatly improved the integration of waveguide.
Generally speaking the thickness of amorphous silicon is thinner, and optical mode in lithium niobate, just can maximize the photoelectric effect of device with regard to larger infiltration.If but the thickness of amorphous silicon is too thin, optical mode can expand, that just can not get restrictive stronger optical mode, can not reduce the spacing between electrode.Preferred described amorphous silicon layer 2 thickness of the present embodiment are 70nm-200nm, and more preferably described amorphous silicon layer 2 thickness are 70nm-150nm.Those skilled in the art should know, and the thickness of described amorphous silicon layer is set as getting through lot of experiment validation, can produce good technique effect.But be not the thickness for limiting amorphous silicon layer, the data variation of other enforceable thickness is also within the protection domain of the present embodiment.
Lithium niobate waveguide chip described in the present embodiment, use amorphous silicon to prepare lithium niobate waveguide chip, due to the refractive index of amorphous silicon superelevation, by the thickness optimization optical loss of rational design amorphous silicon, strengthen photoelectric effect, and then can reduce the spacing between metal electrode in lithium niobate optical modulator, and significantly reduce to realize low voltage signal and modulate required modulation length, significantly reduce lithium niobate optical modulator chip size.Whole lithium niobate waveguide chip only needs a waveguide just can realize and extraneous optical fiber communication simultaneously, without the gradual change conversion between multiple waveguides and waveguide and waveguide, has also reduced to a certain extent the size of lithium niobate waveguide chip.
Described amorphous silicon layer is preferably hydrogenated amorphous silicon layer.Described amorphous silicon hydride has comprised a large amount of Si:H chains, and the existence of described Si:H chain can reduce optical loss.
Because metal is close to waveguide more, it is just larger to the absorption of light, also just cannot obtain good radio-frequency match, thus metal electrode 4 can not be laid immediately in waveguide 12, and need be away from the optical mode scope of waveguide.The described metal electrode 4 of the present embodiment is laid on silicon dioxide, and described silicon dioxide layer 3 thickness are preferably 1um-2um.The thickness of described metal electrode 4 can be set according to actual needs, can be suitable with silicon dioxide layer 3 thickness, also can exceed the thickness of silicon dioxide layer 3.Fig. 2 is the schematic diagram of the connected mode of a kind of lithium niobate waveguide chip described in the present embodiment and optical fiber, as shown in the figure, by controlling the thickness of silicon dioxide and the thickness of metal electrode 4, can guarantee good radio-frequency match.The input/output communication of this waveguide and extraneous optical fiber is realized by waveguide wire 7 and optical fiber 8, and a kind of gradual change type waveguide generally using in silicon optical communication can expand binding height optical mode to optical fiber size to realize best optical coupled gradually.And the optical fiber 8 being connected with the external world is by realizing at the waveguide wire 7 through ducting layer, because above-mentioned waveguide wire is all at ducting layer, so can stop the metallic region of encapsulation or test.Simultaneously with respect to traditional lithium niobate optical modulator chip in preparation process because waveguide wire is thinner, cannot directly carry out probe test or realize chip connecting, and then need on chip, use Twi-lithography step could realize the loaded down with trivial details step that metal connects completely, save process, simplify flow process, can obtain good economic benefit.
Obviously, above-described embodiment is only for example is clearly described, and the not restriction to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here without also giving exhaustive to all embodiments.And among the protection domain that the apparent variation of being extended out thus or variation are still created in the utility model.
Claims (5)
1. a lithium niobate waveguide chip, is characterized in that, at the bottom of comprising lithium niobate base, and is set in turn in the suprabasil amorphous silicon layer of described lithium niobate, silicon dioxide layer and metal electrode; Wherein, the thickness of described amorphous silicon layer is less than the thickness at the bottom of described lithium niobate base, at the bottom of described lithium niobate base and described amorphous silicon layer jointly form waveguide; On described silicon dioxide layer, form electrode fill area, described metal electrode is arranged in described electrode fill area.
2. lithium niobate waveguide chip according to claim 1, is characterized in that, described amorphous silicon layer thickness is 70nm-200nm.
3. lithium niobate waveguide chip according to claim 2, is characterized in that, described amorphous silicon layer thickness is 70nm-150nm.
4. according to the lithium niobate waveguide chip described in claim 2 or 3, it is characterized in that, described silicon dioxide layer thickness is 1um-2um.
5. lithium niobate waveguide chip according to claim 4, is characterized in that, described amorphous silicon layer is hydrogenated amorphous silicon layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320755865.XU CN203658612U (en) | 2013-11-25 | 2013-11-25 | Lithium niobate waveguide chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320755865.XU CN203658612U (en) | 2013-11-25 | 2013-11-25 | Lithium niobate waveguide chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203658612U true CN203658612U (en) | 2014-06-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320755865.XU Expired - Lifetime CN203658612U (en) | 2013-11-25 | 2013-11-25 | Lithium niobate waveguide chip |
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| Country | Link |
|---|---|
| CN (1) | CN203658612U (en) |
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2013
- 2013-11-25 CN CN201320755865.XU patent/CN203658612U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140618 |