CN203653695U - Plasma enhanced chemical vapor deposition (PECVD) coating device - Google Patents
Plasma enhanced chemical vapor deposition (PECVD) coating device Download PDFInfo
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- CN203653695U CN203653695U CN201320858530.0U CN201320858530U CN203653695U CN 203653695 U CN203653695 U CN 203653695U CN 201320858530 U CN201320858530 U CN 201320858530U CN 203653695 U CN203653695 U CN 203653695U
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Abstract
The utility model provides a plasma enhanced chemical vapor deposition (PECVD) coating device, comprising a pretreatment chamber (10), a coating chamber (20) and a receiving chamber (30), wherein the pretreatment chamber (10) is used for carrying out surface pretreatment on a base material (40); the coating chamber (20) is arranged at the downstream of the pretreatment chamber (10) and used for coating the base material (40) pretreated by the pretreatment chamber (10); the receiving chamber (30) is arranged at the downstream of the coating chamber (20) and used for collecting the base material (40) coated by the coating chamber (20); the pretreatment chamber (10), the coating chamber (20) and the receiving chamber (30) are tightly connected in vacuum. By adopting the PECVD coating device provided by the utility model, the cleanliness in surface treatment of the base material can be ensured, and the coating quality of the base material surface is ensured.
Description
Technical field
The present invention relates to geseous discharge technical field, in particular to a kind of PECVD film coating apparatus.
Background technology
The low-temperature plasma that plasma enhanced chemical vapor deposition method PECVD (Plasma Enhanced Chemical Vapor Deposition) produces by means of gas glow discharge, the chemically reactive of intensified response position, promote the chemical reaction between gas, thereby also can on base material, form solid film at low temperatures.Solid film can apply on soft base material, hard base material.For guaranteeing the quality of forming film of solid film, conventionally the preformation face of base material is carried out to surperficial processing, surface-treated object is to remove the material composition of substrate surface.The pre-treatment work meeting of substrate surface has influence on the quality of forming film of solid film on base material.
PECVD device is conventionally by a pair of or some to electrode roller subtend discharge generation plasma body, an electrical discharge zone forms region of discharge between two arrays of electrodes, electronic impact molecule or atom by discharge generation in electrical discharge zone produce plasma body, in high-octane plasma motion process, facilitate the chemical reaction of reactant gases, formed new composition particle.New composition particle forms regular motion under the control in magnetic field, is finally deposited on the outer wall of base material or equipment and forms solid film.In film formation process, control discharging gap between air flow, the control electrode of the vacuum tightness of coating chamber or pressure, control reactant gases etc., can be controlled at the quality of substrate surface plated film.
In the time that base material is carried out to plated film, generally increase the degree of cleaning of substrate surface by substrate surface is heated or baking etc., but thus, substrate surface easily reacts under hot environment and between air, cause substrate surface to pollute, the coating quality of substrate surface is caused to disadvantageous effect.
Summary of the invention
The present invention aims to provide a kind of PECVD film coating apparatus, the degree of cleaning can guarantee substrate surface treatment time, the coating quality of assurance substrate surface.
To achieve these goals, according to an aspect of the present invention, provide a kind of PECVD film coating apparatus, having comprised: pretreatment chamber, for base material is carried out to surface preparation; Coating chamber, is positioned at pretreatment chamber downstream, for to carrying out plated film through the pretreated base material of pretreatment chamber; And rewinding chamber, be arranged on coating chamber downstream, for collecting the base material through coating chamber plated film; It between pretreatment chamber, coating chamber and rewinding chamber, is vacuum-sealing connection.
Further, pretreatment chamber comprises: feed mechanism, for supplying with base material; Surface disposal facility, is arranged on the pending surperficial place side of base material, cleans for the pending surface to base material.
Further, surface disposal facility is low-temperature plasma cleaning mechanism.
Further, coating chamber comprises: discharge electrode pair, and base material is located between two right electrodes of discharge electrode; Wind up roll, base material winding is on wind up roll.
Further, the spacing between right two electrodes of discharge electrode is adjustable.
Further, the spacing between right two electrodes of discharge electrode is between 25mm to 55mm.
Further, the right each electrode of discharge electrode is uniform cross section electrode.
Further, coating chamber also comprises and is connected to indoor exhaust system and inlet mouth, and inlet mouth is arranged between two right electrodes of discharge electrode, and exhaust system is arranged on the sidewall of coating chamber.
Further, PECVD film coating apparatus also comprises rate of film build proofing unit, and rate of film build proofing unit is for detection of the rate of film build in the plasma zone in the right electrical discharge zone of discharge electrode.
Further, rewinding is indoor to be provided with: receiving mechanism, for having packed up the base material of plated film; Corona treatment mechanism, the base material that has been arranged on plated film enters on the path of receiving mechanism, for the solid film of the substrate surface that completes plated film is carried out to corona.
Apply technical scheme of the present invention, PECVD film coating apparatus comprises: pretreatment chamber, for base material is carried out to surface preparation; Coating chamber, is positioned at pretreatment chamber downstream, for to carrying out plated film through the pretreated base material of pretreatment chamber; And rewinding chamber, be arranged on coating chamber downstream, for collecting the base material through coating chamber plated film; It between pretreatment chamber, coating chamber and rewinding chamber, is vacuum-sealing connection.According to PECVD film coating apparatus of the present invention, it between pretreatment chamber, coating chamber and rewinding chamber, is vacuum-sealing connection, the whole coating process of base material is all carried out under vacuum-sealing environment, therefore can avoid base material to carry out surface treatment time, substrate surface and air react and affect the coating quality of base material, thereby effectively improve the coating quality of base material.
Accompanying drawing explanation
The accompanying drawing that forms a part of the present invention is used to provide a further understanding of the present invention, and schematic description and description of the present invention is used for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows the structural representation of PECVD film coating apparatus according to an embodiment of the invention;
Fig. 2 shows the discharge electrode of PECVD film coating apparatus according to an embodiment of the invention to structural representation;
Fig. 3 shows the first structural representation according to the coating chamber of PECVD film coating apparatus of the present invention; And
Fig. 4 shows the second structural representation according to the coating chamber of PECVD film coating apparatus of the present invention.
Reference numeral: 10, pretreatment chamber; 20, coating chamber; 30, rewinding chamber; 40, base material; 11, feed mechanism; 12, surface disposal facility; 21, discharge electrode pair; 22, wind up roll; 23, exhaust system; 24, inlet mouth; 31, receiving mechanism; 32, corona treatment mechanism.
Embodiment
Hereinafter also describe the present invention in detail with reference to accompanying drawing in conjunction with the embodiments.It should be noted that, in the situation that not conflicting, the feature in embodiment and embodiment in the application can combine mutually.
As shown in Figures 1 to 4, according to embodiments of the invention, PECVD film coating apparatus comprises pretreatment chamber 10, coating chamber 20 and rewinding chamber 30.Pretreatment chamber 10 is for carrying out surface preparation to base material 40; Coating chamber 20 is positioned at pretreatment chamber 10 downstreams, for to carrying out plated film through the pretreated base material 40 of pretreatment chamber 10; Rewinding chamber 30 is arranged on coating chamber 20 downstreams, for collecting the base material 40 through coating chamber 20 plated films; It between pretreatment chamber 10, coating chamber 20 and rewinding chamber 30, is vacuum-sealing connection.
It between pretreatment chamber 10, coating chamber 20 and rewinding chamber 30, is vacuum-sealing connection, the whole coating process of base material 40 is all carried out under vacuum-sealing environment, therefore can avoid base material 40 to carry out surface treatment time, substrate surface and air react and affect the coating quality of base material 40, thereby effectively improve the coating quality of base material 40.
Each chamber of pretreatment chamber 10, coating chamber 20 and rewinding chamber 30 is vacuum, can adopt the mode of independent gas barrier to form by each vacuum chamber, also can totally adopt a set of gas barrier to form vacuum.The vacuum tightness of three vacuum chambers all meets 2.0e-2Pa or higher vacuum tightness, thereby guarantee in pretreated process and pre-treatment after substrate surface can not removed by air, thereby can be not contaminated, make base material enter and can become diaphragm area under clean condition, can improve the compactness of film and the purity of film forming etc., thereby improve the quality of solid film.
Pretreatment chamber 10 comprises feed mechanism 11 and surface disposal facility 12, wherein on feed mechanism 11, is wound with base material to be coated 40, for supplying with base material to be coated 40; Surface disposal facility 12 is arranged on the pending surperficial place side of base material 40, cleans for the pending surface to base material 40.In the present embodiment, surface disposal facility 12 is low-temperature plasma cleaning mechanism, is respectively arranged with low-temperature plasma cleaning mechanism 12a and 12b in two sides of A, B of base material 40, can realize two-sided cleaning to base material.
When base material 40 to be coated enters the electrical discharge zone EP district of electrode X, Y, the particle of region of discharge EP deposits to substrate surface very soon by the control meeting in magnetic field.Simultaneously because substrate surface moves.Substrate surface through EP district will form one deck solid film.Particle concentration, the composition of particle and the running orbit of particle that electrical discharge zone EP assembles all determined characteristic and quality, the concentration of particle and the plasma body of the generation relation in direct ratio of film forming.And there is the relation of equal proportion in the air pressure of the discharge environment that the plasma concentration and air demand inlet mouth 24, the coating chamber 20 that form provide, meanwhile, the quantity of plasma generation and the power of power supply relation in direct ratio.And for PECVD technology, the high-power efficiency that can improve film forming, but simultaneously, too high output power can appearance become arc discharge or misplace electricity, thus damage power supply or puncture base material.Therefore, the discharging distance becoming with electrode Y shape for electrode X needs reasonably design and places, and overall discharge environment has higher requirement for waveform, power and the matching degree of power supply.
Requirement when meeting preferably base material 40 plated film to be coated, preferably, discharge electrode is adjustable to the spacing between two electrodes of 21.By regulating two spacing between electrode X, Y, can regulate and put a density of the plasma body at EP place, region, thereby change the concentration of plated film required particle, make discharge electrode to the 21 plated film needs that can meet the base material 40 of different plated film requirements, therefore there is better adaptability.Preferably, discharge electrode is between 25mm to 55mm to the spacing between two electrodes of 21.
The electrical signal of two electrodes is provided by discharge power supply, and the electric signal waveform of the output of discharge power supply can be positive square wave, the trapezoidal complex wave that involves, and can be also sine wave output.Meanwhile, be generally below 2000V for the operating voltage of power supply.Too high operating voltage can produce and misplace electricity and arc discharge in discharge process, and the working power below 2000V guarantees that electrical discharge zone is operated in glow discharge zone.Power work frequency is generally 20kHz-200kHz.For removing the electric charge of equipment inner wall accumulation in plasma discharge process, discharging chamber and the part contacting with discharging chamber will be accomplished good ground connection conventionally, conventionally stake resistance≤5 Ω.In addition, power supply will form good impedance matching with electrical discharge zone, and the impedance matching scope of power supply is between 50 Ω-350 Ω conventionally.
Discharge electrode is lowered the temperature to 21 employing circulating refrigerants, guarantees that the temperature in working process between discharge electrode X and Y does not affect the stopping property of electrode.The material of electrode X, Y is good metallic conductor, can adopt stainless steel, copper material, aluminium material etc.The shape of electrode, can be diversified, as shown in Figure 2, can be solid cylinder, hollow cylinder, can be also the long strip shape electrode that is shaped as circle, circular arc, trapezoidal and rectangle etc. in cross section.The wind up roll of base material 25 and electrode can be taken into account to use when adopting columniform solid or coreless armature, as shown in Figure 3, the now direct winding of base material 40 is on electrode, electrode not only plays the effect of electric discharge formation plasma area, also to play the effect that base material 40 is led simultaneously, separately electrode is arranged again with regard to not needing like this, therefore can reduce the installation costs of discharge electrode in device.
In actual setting up procedure, also wind up roll 22 and discharge electrode can be divided and are arranged 21 two electrode X, Y, if for example adopt the non-circular or asymmetric electrode of central shaft, wind up roll 25 can not be general one group with electrode X, Y, now need discharge electrode to arrange in pairs 21, between each discharge electrode is to two electrodes of 21, produce EP electrical discharge zone, as shown in Figure 4.Through checking, two kinds of methods, in PECVD film process, all can realize normal plated film.
It is adjustable between 0.1-10Pa that the operating pressure of discharge space is generally.In the present embodiment, by regulating the mode of discharge space to regulate the discharge pressure of discharge space.The method in controlled discharge space has, control by the free air delivery of adjusting exhaust system 23, also can control by the air input of the inlet mouth 24 of the reactant gases in adjustment discharge space region, also can adjust free air delivery according to employing and coordinate adjustment air input or air inlet ratio to reach the object of adjusting process, thereby improve quality of forming film.
PECVD film coating apparatus also comprises rate of film build proofing unit, rate of film build proofing unit for detection of discharge electrode to the rate of film build in the plasma zone in 21 electrical discharge zone.The base material transfer mechanism that the transfer rate of base material 40 carries by equipment itself provides uniform transfer rate to realize, and the particle concentration of controlled discharge region EP, rely on rate of film build proofing unit to realize the detection of EP district particle concentration, rate of film build proofing unit detects that data feed back to the control unit of equipment in time, control unit can detect the particle concentration in EP district particle concentration adjustment coating chamber 20 according to rate of film build proofing unit, the concrete mode of adjusting is for adjustment free air delivery or adjust air input, or adjusts air input and free air delivery simultaneously.
In rewinding chamber 30, be provided with receiving mechanism 31 and corona treatment mechanism 32, receiving mechanism 31 is for having packed up the base material 40 of plated film; The base material 40 that corona treatment mechanism 32 has been arranged on plated film enters on the path of receiving mechanism 31, carries out corona for the solid film on base material 40 surfaces to completing plated film.
After solid film applies on base material 40, receiving mechanism 31 is packed up completing the material base material 40 that plated film completes, thereby completes the process of whole plated film.In vacuum plating process; because substrate surface has deposited solid film; surface can conventionally have significantly and reduce; for meeting the processing request of subsequent product; conventionally can form solid film to substrate surface and carry out corona treatment to improve the surface energy of coated surface, therefore can select plated film base material 40 later to carry out corona treatment.In the present embodiment, the corona treatment mechanism 32 that the base material 40 that corona treatment has been arranged on plated film enters on the path of receiving mechanism 31 completes.
As can be seen from the above description, the above embodiments of the present invention have realized following technique effect:
1, avoided in the time that base material is carried out to surface treatment, substrate surface being polluted, guaranteed the surface coating quality of base material.
2, can adjust better the particle concentration of putting a region, improve the coating quality of base material.
3, by corona treatment mechanism is set, can improve the surface energy of base material coated surface, can meet the needs of subsequent thin film processing.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a PECVD film coating apparatus, is characterized in that, comprising:
Pretreatment chamber (10), for carrying out surface preparation to base material (40);
Coating chamber (20), is positioned at described pretreatment chamber (10) downstream, for to carrying out plated film through the pretreated base material of described pretreatment chamber (10) (40); And
Rewinding chamber (30), is arranged on described coating chamber (20) downstream, for collecting the base material (40) through described coating chamber (20) plated film;
It between described pretreatment chamber (10), described coating chamber (20) and described rewinding chamber (30), is vacuum-sealing connection.
2. PECVD film coating apparatus according to claim 1, is characterized in that, described pretreatment chamber (10) comprising:
Feed mechanism (11), for supplying with described base material (40);
Surface disposal facility (12), is arranged on the pending surperficial place side of described base material (40), for the pending surface of described base material (40) is cleaned.
3. PECVD film coating apparatus according to claim 2, is characterized in that, described surface disposal facility (12) is low-temperature plasma cleaning mechanism.
4. PECVD film coating apparatus according to claim 1, is characterized in that, described coating chamber (20) comprising:
Discharge electrode is to (21), and described base material (40) is located in described discharge electrode between two of (21) electrodes; Wind up roll (22), described base material (40) winding is on described wind up roll (22).
5. PECVD film coating apparatus according to claim 4, is characterized in that, described discharge electrode is adjustable to the spacing between two of (21) described electrodes.
6. PECVD film coating apparatus according to claim 4, is characterized in that, described discharge electrode is between 25mm to 55mm to the spacing between two of (21) electrodes.
7. PECVD film coating apparatus according to claim 4, is characterized in that, described discharge electrode is uniform cross section electrode to each electrode of (21).
8. PECVD film coating apparatus according to claim 4, it is characterized in that, described coating chamber (20) also comprises and is connected to indoor exhaust system (23) and inlet mouth (24), described inlet mouth (24) is arranged on described discharge electrode between two of (21) electrodes, and described exhaust system (23) is arranged on the sidewall of described coating chamber (20).
9. PECVD film coating apparatus according to claim 4, it is characterized in that, described PECVD film coating apparatus also comprises rate of film build proofing unit, described rate of film build proofing unit for detection of described discharge electrode to the rate of film build in the plasma zone in the electrical discharge zone of (21).
10. according to the PECVD film coating apparatus described in any one in claim 1 to 9, it is characterized in that, in described rewinding chamber (30), be provided with:
Receiving mechanism (31), for having packed up the base material (40) of plated film;
Corona treatment mechanism (32), the base material (40) that completes plated film described in being arranged on enters on the path of described receiving mechanism (31), for the solid film on described base material (40) surface that completes plated film is carried out to corona.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320858530.0U CN203653695U (en) | 2013-12-24 | 2013-12-24 | Plasma enhanced chemical vapor deposition (PECVD) coating device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320858530.0U CN203653695U (en) | 2013-12-24 | 2013-12-24 | Plasma enhanced chemical vapor deposition (PECVD) coating device |
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| CN203653695U true CN203653695U (en) | 2014-06-18 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103695870A (en) * | 2013-12-24 | 2014-04-02 | 北京北印东源新材料科技有限公司 | PECVD (plasma enhanced chemical vapor deposition) coating device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103695870A (en) * | 2013-12-24 | 2014-04-02 | 北京北印东源新材料科技有限公司 | PECVD (plasma enhanced chemical vapor deposition) coating device |
| CN103695870B (en) * | 2013-12-24 | 2015-10-28 | 北京北印东源新材料科技有限公司 | PECVD film coating apparatus |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210113 Address after: 515000 room 3403, block a, xindehua building, 102 Jinsha Road, Longhu District, Shantou City, Guangdong Province Patentee after: Guangdong red apple Technology Co.,Ltd. Address before: 101407 No.1, building 1, No.8, Yanqi East 2nd Road, Yanqi Economic Development Zone, Huairou District, Beijing Patentee before: BEIJING BEIYIN EAST ORIENT NEW MATERIALS TECHNOLOGY Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210909 Address after: 101407 No.1, building 1, No.8, Yanqi East 2nd Road, Yanqi Economic Development Zone, Huairou District, Beijing Patentee after: BEIJING BEIYIN EAST ORIENT NEW MATERIALS TECHNOLOGY Co.,Ltd. Address before: 515000 room 3403, block a, xindehua building, 102 Jinsha Road, Longhu District, Shantou City, Guangdong Province Patentee before: Guangdong red apple Technology Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140618 Termination date: 20211224 |
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| CF01 | Termination of patent right due to non-payment of annual fee |