CN203632890U - Aluminum bronze Cu+ composite backing rear earth thick film circuit intelligent electrothermal chip - Google Patents
Aluminum bronze Cu+ composite backing rear earth thick film circuit intelligent electrothermal chip Download PDFInfo
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- CN203632890U CN203632890U CN201320875517.6U CN201320875517U CN203632890U CN 203632890 U CN203632890 U CN 203632890U CN 201320875517 U CN201320875517 U CN 201320875517U CN 203632890 U CN203632890 U CN 203632890U
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- thick film
- earth thick
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- rear earth
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 239000002131 composite material Substances 0.000 title claims abstract description 50
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 39
- 229910000906 Bronze Inorganic materials 0.000 title claims abstract description 27
- 239000010974 bronze Substances 0.000 title claims abstract description 27
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 230000000844 anti-bacterial effect Effects 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 96
- 150000002910 rare earth metals Chemical class 0.000 claims description 90
- 238000005485 electric heating Methods 0.000 claims description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 24
- 238000002360 preparation method Methods 0.000 claims description 21
- 239000010410 layer Substances 0.000 claims description 13
- 238000005096 rolling process Methods 0.000 claims description 9
- 239000012528 membrane Substances 0.000 claims description 8
- 239000012943 hotmelt Substances 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 3
- 239000002365 multiple layer Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 239000004411 aluminium Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 239000000843 powder Substances 0.000 description 56
- 239000011521 glass Substances 0.000 description 38
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 28
- 239000003960 organic solvent Substances 0.000 description 22
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 22
- 239000002002 slurry Substances 0.000 description 22
- 239000007790 solid phase Substances 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 18
- 239000000203 mixture Substances 0.000 description 16
- 239000002245 particle Substances 0.000 description 15
- 229960004643 cupric oxide Drugs 0.000 description 13
- 241000894006 Bacteria Species 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 229910052746 lanthanum Inorganic materials 0.000 description 6
- 229910052727 yttrium Inorganic materials 0.000 description 6
- 239000001856 Ethyl cellulose Substances 0.000 description 5
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000011267 electrode slurry Substances 0.000 description 5
- 235000019325 ethyl cellulose Nutrition 0.000 description 5
- 229920001249 ethyl cellulose Polymers 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- IIZPXYDJLKNOIY-JXPKJXOSSA-N 1-palmitoyl-2-arachidonoyl-sn-glycero-3-phosphocholine Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@H](COP([O-])(=O)OCC[N+](C)(C)C)OC(=O)CCC\C=C/C\C=C/C\C=C/C\C=C/CCCCC IIZPXYDJLKNOIY-JXPKJXOSSA-N 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 4
- 229910052691 Erbium Inorganic materials 0.000 description 4
- 229910052688 Gadolinium Inorganic materials 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 4
- 229910052773 Promethium Inorganic materials 0.000 description 4
- ZFOZVQLOBQUTQQ-UHFFFAOYSA-N Tributyl citrate Chemical compound CCCCOC(=O)CC(O)(C(=O)OCCCC)CC(=O)OCCCC ZFOZVQLOBQUTQQ-UHFFFAOYSA-N 0.000 description 4
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 4
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 4
- 239000000787 lecithin Substances 0.000 description 4
- 235000010445 lecithin Nutrition 0.000 description 4
- 229940067606 lecithin Drugs 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 4
- UBQALOXXVZQHGR-UHFFFAOYSA-N palladium yttrium Chemical compound [Y].[Pd] UBQALOXXVZQHGR-UHFFFAOYSA-N 0.000 description 4
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910052706 scandium Inorganic materials 0.000 description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 4
- 230000001954 sterilising effect Effects 0.000 description 4
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 4
- -1 control technology Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000004659 sterilization and disinfection Methods 0.000 description 3
- 229910003451 terbium oxide Inorganic materials 0.000 description 3
- SCRZPWWVSXWCMC-UHFFFAOYSA-N terbium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tb+3].[Tb+3] SCRZPWWVSXWCMC-UHFFFAOYSA-N 0.000 description 3
- 239000002562 thickening agent Substances 0.000 description 3
- 238000003723 Smelting Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002893 slag Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000000052 vinegar Substances 0.000 description 2
- 235000021419 vinegar Nutrition 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 1
- 208000032170 Congenital Abnormalities Diseases 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000007698 birth defect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- IUYOGGFTLHZHEG-UHFFFAOYSA-N copper titanium Chemical compound [Ti].[Cu] IUYOGGFTLHZHEG-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003349 gelling agent Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 210000001161 mammalian embryo Anatomy 0.000 description 1
- 238000013178 mathematical model Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000002667 nucleating agent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
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Abstract
The utility model discloses an aluminum bronze Cu+ composite backing rear earth thick film circuit intelligent electrothermal chip which is characterized by comprising an antibacterial cooper Cu+ aluminium composite metal substrate and a rear earth thick film circuit manufactured on the antibacterial cooper Cu+ aluminium composite metal substrate. The rear earth thick film circuit comprises rear earth thick film dielectric layers, a rear earth thick film resistor circuit, a rear earth thick film control circuit, a rear earth thick film electrode connection circuit and a rear earth thick film functional circuit, wherein the rear earth thick film resistor circuit, the rear earth thick film control circuit, the rear earth thick film electrode connection circuit and the rear earth thick film functional circuit are overlapped in a bent, wound and multi-layer manner. The rear earth thick film functional circuit integrates and combines output ports of a split electronic component and a temperature control component. The aluminum bronze Cu+ composite backing rear earth thick film circuit intelligent electrothermal chip is characterized by being high in film density, good in uniformity, excellent in performance, short in production period, few in procedure, low in energy consumption, small in material loss and the like.
Description
Technical field
The utility model relates to thick film circuit technique field, electric heating field, relates to more specifically a kind of aluminum bronze Cu+ composite base rare earth thick film circuit electrothermal chip.
Background technology
In recent years, because electric heating field innovative technology, intellectual property are safeguarded referred critical role, rare earth thick film circuit electroheat technology, control technology, fabrication of new materials technology are able to fast development.Along with constantly bringing forth new ideas of electric slurry science and technology, the application of rare earth thick film circuit electric heating field electric slurry, control technology, substrate technology presents the impetus of fast development.
In Intelligent electric-heating field, the thick film circuit manufacture craft that adopts rare earth thick film circuit thermosensitive resistor and circuit merges the thick film circuit Intelligent electric-heating element that the unique domination property of thermistor is made in conjunction with thick film circuit technology of preparing, this theory practice " PTC thick film curc uit controllable electric heating element " china national practical new-type patent (having obtained the international multinational mandate of PCT), before 2004, proposed by the applicant, and applied rapidly." a kind of PTC rare earth thick film circuit Intelligent electric-heating element and preparation technology thereof " china national practical new-type patent also has compared with system, perfect discussion for the practice and application of " PTC thick film curc uit controllable electric heating element " patent achievement.
Very little to certain temperature range resistance in room temperature with rare earth thick-film thermistor circuit rear-earth-doped and semiconducting, sharply rise to uniform temperature (Curie-point temperature) thick-film circuit resistor, abrupt temp can the scope adjustment from 30 ℃ to 550 ℃, this characteristic is called positive temperature coefficient heat-sensitive thick-film circuit resistor electrocaloric effect, be called for short PTCR effect, being called PTCR-xthm chip with the integrated electrothermal device of this circuit is rare earth thick-film thermistor integrated circuit Intelligent electric-heating chip.Thermistor thick film circuit, not only has thermistor general characteristic, and due to the composition of its material and the uniqueness of technique, makes it have again the unexistent unique premium properties of general thermal-sensitive electric resistance device.It can thick film circuit form stack vertical with thick-film resistor circuit or cross direction profiles, integrated some layers are in a plane.The gradient temperature of controlling thick film circuit electrothermal chip, is greatly improved control precision and sensitivity.Realize the setting of many warm areas gradient, Efficient Operation Intelligent control, energy-saving material-saving reduces costs.
Up to now, the thermistor electric heating appliance that the domestic and international overwhelming majority has (PTC) effect is still the doping of barium titanate [-Base base material and is prepared from, because its room temperature resistivity is high, thereby application under high current capacity is restricted, simultaneously due to its material and structural design itself and manufacture craft birth defect, cause the problems such as depleted power, range of application is limited.Positive temperature coefficient ruthenium thermistor element, is mainly used in microelectronic circuit system.Poor because of its manufacture craft, element sensitivity is low, mostly separates member control system in PCB version etc. and uses, and is difficult to the microelectronic integrated circuit system applies higher in integrated level, more difficultly in the integrated circuit electrothermal chip product of electric heating field, promotes.Though stainless steel-based rare earth thick film circuit electrothermal chip development speed is very fast, because of substrate conductive coefficient on the low side, apply limited, although copper base rare earth thick film circuit electrothermal chip is in plurality of advantages such as field of household appliances unsoundness, sterilizations, also because of technology of preparing cost, the higher many reasons of material cost, be applied to the high-end market of military project and products thereof by emphasis.Utility model patent " aluminium base rare earth thick film circuit electrothermal chip " is used for air load, hot-water heating series of products, contains range of application little.
In recent years, the production technology of the rolling of copper aluminum composite material hot melt and blast rolling is ripe gradually, for aluminum bronze composite base rare earth thick film circuit Intelligent electric-heating chip is developed, batch production is laid a good foundation.Copper aluminum composite material is applied to household electrical appliances water series of products, has that healthy sterilization, the heat efficiency are high, a plurality of advantages such as energy-conserving and environment-protective, cost are low, has annotated healthy green household electrical appliance innovation concept, and has been brought to market, becomes trend.
The antibacterial bronze of T2 that the utility model uses, hereinafter referred to as antibacterial copper Cu+.Unique antibacterial, sterilization material being authenticated by Environmental Protection Agency.Birmingham SellyOak hospital of Britain prove after Data Comparison through term hospital select antibacterial copper product as contact surfacing after, amount of bacteria proves that than the scientific experiment of the world-class authoritative institutions of many families such as the few 90%-100%. EPA of Environmental Protection Agency of other non-copper products antibacterial copper Cu+ can kill the bacterium that exceedes 99.9% in two hours, and this characteristic makes antibacterial copper Cu+ become one of antibacterial contact-making surface material of the most effective solid in the whole world.Any other material is Nano Silver coating or stainless steel for example, all cannot compare favourably with it.Test and show simultaneously, antibacterial copper, as natural antibacterial material, does not add chemical composition environmentally safe, and can reclaim.Based on " copper Cu+ " natural antibacterial attribute, the various product of being produced by antibacterial copper Cu+ is that the mankind bring comprehensive care of exempting household electrical appliances secondary pollution just.For this reason, antibacterial copper occupies critical role in the household appliances of electric heating field, will be used widely in the whole world.The target of this patent " aluminum bronze Cu+ composite base rare earth thick film circuit Intelligent electric-heating chip " utility model is also this.
Utility model content
The purpose of this utility model is exactly the deficiency in order to solve prior art and the one integrated preparation in multi-functional, many temperature field, the gradient control that provide, power density adjusting range is large, the heat efficiency is high, energy-conserving and environment-protective, safe and reliable with low cost, there is high-temp. far infrared function, the rare earth thick film circuit electrothermal chip of antibacterial, sterilizing function.
The utility model is to adopt following technical solution to realize above-mentioned purpose: a kind of aluminum bronze Cu+ composite base rare earth thick film circuit Intelligent electric-heating chip, it is characterized in that, it comprises the rare earth thick film circuit of antibacterial copper Cu+ aluminum composite metal substrate and upper preparation thereof, rare earth thick film circuit comprises the rare earth thick-film resistor circuit of rare earth thick film dielectric layer and bending coiling multiple-layer stacked, rare earth thick film control circuit, rare earth thick membrane electrode is connected circuit and rare earth thick film functional circuit, rare earth thick film functional circuit is integrated, combination is connected division electronic devices and components, the output port of temperature control components and parts.
As further illustrating of such scheme, in the plane or arbitrary surface of described antibacterial copper Cu+ aluminum composite metal substrate, integrated several temperature provinces that is prepared with, realize the integrated modular combination of several functions.
Described several temperature provinces are that gradient distributes or cross direction profiles.
Described antibacterial copper Cu+ aluminum composite metal substrate is that T2 bronze Cu+ and 3 series alloys are composited through hot melt rolling and blast rolling.
Described rare earth thick-film resistor circuit, rare earth thick film control circuit, rare earth thick membrane electrode are connected circuit and rare earth thick film functional circuit is prepared on alumina-base material, T2 bronze Cu+ is as load carrying face, and the bacterium 99.9% being attached on waterway wall when contact water load can be killed; Bacterium mobile in water also can be killed by high-temp. far infrared ripple; Extremely should make the water series of products such as water dispenser, electric heater, air-source water heater, novel heat collector.
The beneficial effect that the utility model adopts above-mentioned technical solution to reach is:
The utility model adopts antibacterial copper Cu+ aluminum composite metal substrate and on substrate, prepares rare earth thick film circuit, the especially application of HIP technology, density, uniformity and the chip integration of raising film, hot property, electrical property, temperature-control performance excellence; There is with short production cycle, the feature such as energy consumption is low, energy-saving material-saving, good quality of product, process stabilizing.
Accompanying drawing explanation
Fig. 1 is that Fig. 1 of the present utility model is two warm areas, four temperature electrothermal chip schematic diagrames;
Fig. 2 is exploded view of the present utility model;
Fig. 3 is structural representation of the present utility model;
Fig. 4 is the cutaway view of Fig. 3.
Description of reference numerals: 1, antibacterial copper Cu+ aluminum composite metal substrate 2, rare earth thick film circuit 2-1, rare earth thick film dielectric layer 2-2, rare earth thick-film resistor circuit 2-3, rare earth thick film control circuit 2-4, rare earth thick membrane electrode are connected circuit 2-5, rare earth thick film functional circuit 3, warm area 1, warm area 25, binding post.
Embodiment
As Figure 1-Figure 4, a kind of aluminum bronze Cu+ of the utility model composite base rare earth thick film circuit Intelligent electric-heating chip, it comprises the rare earth thick film circuit 2 of antibacterial copper Cu+ aluminum composite metal substrate 1 and upper preparation thereof, rare earth thick film circuit 2 comprises that rare earth thick-film resistor circuit 2-2, the rare earth thick film control circuit 2-3 of rare earth thick film dielectric layer 2-1 and bending coiling multiple-layer stacked, rare earth thick membrane electrode are connected circuit 2-4 and rare earth thick film functional circuit 2-5, and rare earth thick film functional circuit is integrated, combination is connected the output port that has division electronic devices and components, temperature control components and parts.
According to demand, can be in multiple planes of electrothermal chip or arbitrary surface, the some layers of integrated preparation or gradient distribute or several temperature provinces of cross direction profiles, realize the integrated modular combination of several functions.Control precision and sensitivity are increased substantially.Realize the setting of many warm areas gradient, Efficient Operation Intelligent control, energy-saving material-saving reduces costs.
Described antibacterial copper Cu+ aluminum composite metal substrate is that T2 bronze Cu+ and 3 series alloys are composited through hot melt rolling and blast rolling; The compound ratio of copper Cu+ aluminium composite substrate material: (0.15-0.35): (0.85-0.65), be generally: 0.2:0.8.Aluminium and T2 bronze Cu+ has very high conductive coefficient, and it is nearly 1/3rd that the conductive coefficient of copper exceeds aluminium, and hot property is good.Rare earth thick film circuit conventionally preparation, on alumina-base material, also can be prepared on copper-based material.This patent is prepared rare earth thick film circuit on alumina-base material.T2 bronze Cu+ is as radiating surface or claim load carrying face.Contact with various loads.The bacterium 99.9% being attached on waterway wall when contact water load can be killed.Bacterium mobile in water also can be killed by high-temp. far infrared ripple.Extremely should make the water series of products such as water dispenser, electric heater, air-source water heater, novel heat collector.It is the only choosing of electric heating field household electrical appliance.
Described rare earth thick-film resistor circuit, rare earth thick film control circuit, rare earth thick membrane electrode are connected circuit and rare earth thick film functional circuit is prepared on alumina-base material, T2 bronze Cu+ is as load carrying face, and the bacterium 99.9% being attached on waterway wall when contact water load can be killed; Bacterium mobile in water also can be killed by high-temp. far infrared ripple; Extremely should make the water series of products such as water dispenser, electric heater, air-source water heater, novel heat collector.
Described rare earth thick film dielectric layer is to be prepared from by rare earth medium slurry, rare earth thick film control circuit is to be prepared from by thermistor of rare-earth element slurry, rare earth thick film functional circuit is prepared from by rare earth resistance slurry, it is to be prepared from by rare earth electrode slurry that rare earth thick membrane electrode is connected circuit, and circuit surface encapsulated layer is to be prepared from by sealing electric slurry.
Described rare earth medium slurry is made up of solid phase composition and organic solvent carrier, and the percentage by weight of solid phase composition and organic solvent carrier comprises: microcrystalline glass powder 70-85%, and organic solvent carrier 30 as one kind-15%, microcrystalline glass powder is by SiO
2, Na
2o, B
2o
3, K
2o, BaO, CaO, Co
2o
3, TiO
2, P
2o
5, V
2o
5, Sb2
2o
3, Cr
2o
3and rare earth oxide composition, the percentage by weight that each raw material of microcrystalline glass powder accounts for solid phase composition is
20-55%, 0-20%, 0-20%, 0-20%, 1-10%, 0-5%, 0-5%, 3-27%, 0-5%, 0-10%, 0-5%, 0-5%; Organic solvent carrier is one or more of terpinol, butyl carbitol acetate, tributyl citrate, 1.4-butyrolactone, NC Nitroncellulose, ethyl cellulose, rilanit special, lecithin, and the percentage by weight that each raw material occupies machine solvent carrier is followed successively by: 0-85%, 0-85%, 0-20%, 2-20%, 0.1-5%, 0-3%, 1-6%, 0.1-5%, 0.1-5%; Rare earth oxide is one or more oxides in lanthanum, cerium, neodymium, promethium, gadolinium, erbium, scandium, yttrium and terbium oxide.
Described rare earth oxide replaces one or more of oxide in described formula, and rare earth oxide accounts for 0.09%～15% of oxide in described formula, and below solid phase diameter of particle 3 μ m, micron order accounts for 80%, nanometer grade powder 20%.
Described rare earth resistance slurry is made up of microcrystalline glass powder, Fine Aluminum Powder, inorganic adhesive phase organic solvent carrier and rare earth oxide; Microcrystalline glass powder mixes rear and inorganic adhesive phase organic solvent carrier percentage by weight with Fine Aluminum Powder is (50-75) %:(15-40) %, wherein, the weight ratio between Fine Aluminum Powder and microcrystalline glass powder is: (55-80) %:(20-45) %.The formula of microcrystalline glass powder comprises by weight percentage: P
2o
5(35-55) %, ZnO(35-50) %, K
2o(5-10) %, B
2o
3(0-10) %, SnO
2(0-10) %, SiO
2(0-5) %, Li
2o(0-2) %, Al
2o
3(2-5) %, CuO(0-1.5) %; Fine Aluminum Powder granularity is: 3-5 μ m;
The formula of inorganic adhesive phase organic solvent carrier comprises by weight percentage: terpinol 75-98%, tributyl citrate 0-15%, ethyl cellulose 0.5-5%, NC Nitroncellulose 0-2%, rilanit special 0.1-5%, lecithin 0.1-5%;
Described rare earth oxide is one or more oxides in lanthanum, cerium, neodymium, promethium, gadolinium, erbium, scandium and yttrium; Requirement according to the thick film circuit electrothermal chip of different capacity, different temperatures, different sheet resistances to electric conductivity, hot property, chemical property, mechanical performance and far-infrared functional, add the rare earth oxide of variety classes, different shares according to test mathematical model, increase or replace the one or more of above-mentioned Fine Aluminum Powder, microcrystalline glass powder.
Described rare earth oxide replaces one or more of oxide in described formula, and rare earth oxide accounts for 0.09%～15% of oxide in described formula, and below solid phase diameter of particle 3 μ m, micron order accounts for 80%, nanometer grade powder 20%.
Described thermistor of rare-earth element slurry is made up of ruthenic oxide, cupric oxide, yittrium oxide composite powder and microcrystalline glass powder and organic solvent carrier, ruthenic oxide, cupric oxide, yittrium oxide composite powder and microcrystalline glass powder composition solid phase composition, the weight ratio of solid phase composition and organic solvent carrier is (65～85): (35～15); In solid phase composition, the weight ratio of ruthenic oxide, cupric oxide, yittrium oxide composite powder and devitrified glass is (75～55): (25～45); Weight ratio between ruthenic oxide in ruthenic oxide, cupric oxide, yittrium oxide composite powder, cupric oxide, yittrium oxide powder is: (75～59): (15～40.5): (10～0.5), and the particle diameter of ruthenic oxide, cupric oxide, yittrium oxide composite powder is: 0.30-3.0 μ m; Microcrystalline glass powder is: CaO～SiO
2～A1
2o
3～B
2o
3～Bi
2o
3～La
2o
3rare earth oxide microcrystalline glass in series; Each oxide weight ratio: SiO
2(20～60) %, A1
2o
3(5～35) %, CaO(10～35) %, Bi
2o
3(10～30) %, B
2o
3(1～10) %, La
2o
3(O.3～8) %;
The formula of organic solvent carrier comprises by weight percentage: terpinol 68～78%, citric acid three fourth vinegar 2～18%, ethyl cellulose 0.4～9%, NC Nitroncellulose 0.4～9%, rilanit special 0.1～6%, lecithin 0.1～6%; Rare earth oxide is one or more oxides in lanthanum, cerium, neodymium, promethium, gadolinium, erbium, scandium, yttrium and terbium oxide, described rare earth oxide replaces one or more of oxide in described formula, rare earth oxide accounts for 0.09%～15% of oxide in described formula, below solid phase diameter of particle 3 μ m.
Described rare earth electrode slurry is made up of solid phase powder and organic solvent carrier, and weight ratio is (70～90): (10～30); Solid phase powder comprises silver-colored palladium yttrium composite powder and microcrystalline glass powder, and silver-colored palladium yttrium composite powder and microcrystalline glass powder weight ratio are (0.6～99.4): (0.6～6); Each raw material weight ratio in silver palladium yttrium composite powder is: (0.6～10): (82～99): (0.4～8); Particle diameter is: 3 μ m; The formula of organic solvent carrier comprises by weight percentage: terpinol 60～98%, citric acid three fourth vinegar 10～30%, ethyl cellulose 2～10%, NC Nitroncellulose 1～5%, rilanit special 0.1～5%, lecithin 0.1～5%;
Devitrified glass is SiO
2～A1
2o
3～CaO～B
2o
3～Bi
2o
3～La
2o
3rare earth, oxide based devitrified glass, each oxide by the weight percent of devitrified glass is: SiO
220～60%, A1
2o
35～35%, CaO10～35%, B
2o
31～15%, La
2o
30.3～15%, Bi
2o
310～30%; Rare earth oxide is one or more oxides in lanthanum, cerium, neodymium, promethium, gadolinium, erbium, scandium, yttrium and terbium oxide.
Described rare earth oxide replaces one or more of oxide in described formula, and rare earth oxide accounts for 0.09%～15% of oxide in described formula, and below solid phase diameter of particle 3 μ m, micron order accounts for 80%, nanometer grade powder 20%.
A preparation technology for aluminum bronze Cu+ composite base rare earth thick film circuit Intelligent electric-heating chip, it comprises the steps:
The preparation of a, film: prepare electric slurry, and on casting machine, prepare the green band of heterogeneity, specification, comprise medium green band, thermistor green band, resistance green band, electrode green band, be called thick film circuit through the green band of sintering, be referred to as rare earth thick film circuit; And be dried 30～50 minutes at machine at 80～150 ℃, obtaining thickness is the raw embryo of 0.2～3mm tape, laser cutting, punch process moulding.
The preparation of b, chip: the magnetisation band glass cement preparing or silica gel are attached on aluminum bronze Cu+ composite base plate and are placed in frock, be arranged in hot isostatic press, under nitriding atmosphere, carry out sintering by temperature curve, heating-cooling speed: 50-70 ℃ ∕ min, peak temperature: 450-650 ℃.
C, check every design parameter to comprise sheet resistance, withstand voltage, physical dimension and thickness of dielectric layers on request, require thickness of dielectric layers > 60 μ m, sheet resistance film thickness > 8 μ m.
Below in conjunction with specific embodiment, specific embodiments of the present utility model is described in further detail.
1, by the requirement of utility model content technology of preparing, by drawing specification processing and fabricating aluminum bronze composite base plate as shown in Figure 1;
2, as the requirement of utility model content formula, prepare all kinds of rare-earth electric slurries;
1) rare earth medium slurry preparation technology:
1. prepare rare earth microcrystalline glass powder: by weight ratio by each oxide, Nucleating Agent, melting after mixing, smelting temperature is: 1100～1450 ℃.Be incubated after 90～180 minutes, the shrend of coming out of the stove, obtains the micro-slag of glass; The micro-slag of ball milling glass, prepares the microcrystalline glass powder of 1～3 micron of particle diameter; Rare earth oxide proportioning consumption is between 0.09%～15%.Below solid phase diameter of particle 3 μ m, micron-sized powder accounts for 80%, and nanometer grade powder accounts for 20%.
2. prepare organic solvent carrier: by proportioning, raw material is mixed to melting bath a few hours in the water of 80～100 ℃; Adjust ethyl cellulose cellulose content, the viscosity of organic carrier is adjusted in the scope of 150～280mPaS;
3. dielectric paste modulation: the weight ratio of solid phase composition and organic solvent carrier is pressed to 65:85～35:15; Through R-S01 type bidirectional rotation+vibrating machine, mix, stir, disperse after one hour, three rod rollings obtain finished product, and viscosity number is 150～200PaS/RPM.
2) rare earth resistance slurry preparation technology:
The percentage by weight that microcrystalline glass powder, Fine Aluminum Powder are mixed rear and organic solvent carrier is 50-75%:50-25%, and wherein the weight ratio of Fine Aluminum Powder and microcrystalline glass powder is: 80-55%:20-45%; Microcrystalline glass powder, Fine Aluminum Powder granularity are: 3-5 μ m; Rare earth oxide preparation, every kind of rare earth proportioning consumption is between 0.09%～15%, below solid phase diameter of particle 3 μ m.
1. the preparation of Fine Aluminum Powder
By the metallic aluminium melting choosing, be placed in totally enclosed high speed disc atomizer, motlten metal is superheated to 250 degrees Celsius, under inert gas shielding, cooling rapidly, and speed is 105～107K/S, powder by atomization; The aluminium powder of atomization from container portion is delivered to cyclone separator, and the spray column being sent to after first separation with screen pack carries out gas solid separation, after being dried, obtains the Fine Aluminum Powder that particle mean size is 3～5 μ m.
2. the preparation of microcrystalline glass powder
Microcrystalline glass powder good proportioning is mixed and is placed on melting in clock hood type furnace in batch mixer; Smelting temperature is 800～1200 degrees Celsius.Peak value insulation 1～5 hour, shrend obtains glass dregs; Glass dregs is obtained to the glass micro mist that particle mean size is not more than 5 microns for 2～4 hours as for planet-shaped grinding in ball grinder.
3. the preparation of organic solvent carrier (inorganic adhesive phase)
The configuration of organic solvent carrier is that main solvent, thickener, surfactant, thixotropic agent, gelling agent in organic solvent carrier are dissolved to a few hours by a certain percentage in the water of 80～100 ℃, adjust thickener, amount of diluent, the viscosity of organic solvent carrier is adjusted in the scope of 150～280mPas.
4. the preparation of resistance slurry
By proportioning, microcrystalline glass powder, Fine Aluminum Powder, inorganic adhesive phase organic solvent carrier and rare earth oxide are placed in to high mechanical energy whirling vibration device for mixing, dispersing and grinding, grind one hour, obtain rare earth resistance slurry through three rod mill millings.Adjust microcrystalline glass powder, Fine Aluminum Powder, the composition of rare earth oxide, the serial rare-earth resistance slurry that weight proportion can obtain different sheet resistances.Adjust thickener, amount of diluent, the viscosity of slurry is adjusted in the scope of 168～289mPas.
Embodiment resistance slurry sheet resistance used: 100 Μ Ω ∕.
3) thermistor of rare-earth element blank preparation technics:
The utility model " electrothermal chip " is made up of ruthenic oxide, cupric oxide, yittrium oxide composite powder and microcrystalline glass powder and organic solvent carrier with thermistor of rare-earth element slurry, and the weight ratio of ruthenic oxide, cupric oxide, yittrium oxide and organic carrier is 65～85:35～15; Ruthenic oxide, cupric oxide, yittrium oxide composite powder and microcrystalline glass powder composition solid phase composition, in solid phase composition, the weight ratio of ruthenic oxide, cupric oxide, yittrium oxide composite powder and devitrified glass is 75～55:25～45; The weight ratio of ruthenic oxide in ruthenic oxide, cupric oxide, yittrium oxide composite powder, cupric oxide, yittrium oxide powder is: 75～59:15～40.5:10～0.5, and the particle diameter of ruthenic oxide, cupric oxide, yittrium oxide composite powder is: 0.30--3.0 μ m;
Rare earth oxide amount ratio is between 0.09%～15%.Below solid phase diameter of particle 3 μ m.
The same resistance slurry of thermistor of rare-earth element slurry modulation process method.
4) rare earth electrode slurry preparation technology:
Rare earth electrode slurry is made up of solid phase powder and organic solvent carrier, and weight ratio is 70～90:30～10; Solid phase powder comprises silver-colored palladium yttrium composite powder and microcrystalline glass powder, and silver-colored palladium yttrium composite powder and microcrystalline glass powder weight ratio are 99.4～0.6:0.6～6; Silver palladium yttrium composite powder weight ratio is: 0.6～10:99～82:0.4～8; Particle diameter is: 3 μ m; Rare earth oxide amount ratio is between 0.09%～15%.Below solid phase diameter of particle 3 μ m, micron order accounts for 80%, and nanometer grade powder accounts for 20%.
The same resistance slurry of rare earth electrode slurry modulation process method.
The present embodiment rare earth thick film control circuit unit for electrical property parameters:
1. control circuit electrical property:
2. Thermistor physical property " electrothermal chip " parameter
As shown in Figure 1, the present embodiment is nine layers of-17 port aluminum bronze Cu+ composite base rare earth thick film circuit Intelligent electric-heating chip of the vertical preparation of two warm area-tetra-temperature-single warm area.Two four kinds of temperature of warm area in this fact Example, warm area 1 is arranged side by side with warm area 24, and vertical stack is prepared nine layers altogether, and two warm areas are laterally prepared 18 layers.Binding post 5 is 17 ports, and module modularization rear port can be more, should select air appliance splicing type terminal or design specialized patch cord terminal, and side is safe and reliable.Warm area, temperature can design according to the market demand.
The foregoing is only preferred embodiment of the present utility model, can not limit with this interest field of the utility model.Also aluminum steel is compound, titanium copper is compound, aluminium titanium is compound etc. for composite base plate.Circuit trace also can be concentric circles or spiral of Archimedes shape, involute shape.The preparation number of plies is the amount doesn't matter, circuit series connection, calculus circuit, semiconductor digital circuit, AC-DC Circuit, Pulse and Digital Circuits etc.Many warm areas, many temperature or the equivalent variations different shape of doing according to the utility model the scope of the claims, module number of combinations, form, all belong to the scope that the utility model is contained.
Claims (5)
1. an aluminum bronze Cu+ composite base rare earth thick film circuit Intelligent electric-heating chip, it is characterized in that, it comprises the rare earth thick film circuit of antibacterial copper Cu+ aluminum composite metal substrate and upper preparation thereof, rare earth thick film circuit comprises that rare earth thick-film resistor circuit, rare earth thick film control circuit, the rare earth thick membrane electrode of rare earth thick film dielectric layer and bending coiling multiple-layer stacked are connected circuit and rare earth thick film functional circuit, and rare earth thick film functional circuit is integrated, combination is connected the output port that has division electronic devices and components, temperature control components and parts.
2. aluminum bronze Cu+ composite base rare earth thick film circuit Intelligent electric-heating chip according to claim 1, is characterized in that, in the plane or arbitrary surface of described antibacterial copper Cu+ aluminum composite metal substrate, and integrated several temperature provinces that is prepared with.
3. aluminum bronze Cu+ composite base rare earth thick film circuit Intelligent electric-heating chip according to claim 2, is characterized in that, described several temperature provinces are that gradient distributes or cross direction profiles.
4. aluminum bronze Cu+ composite base rare earth thick film circuit Intelligent electric-heating chip according to claim 1, is characterized in that, described antibacterial copper Cu+ aluminum composite metal substrate is that T2 bronze Cu+ and alumina-base material are composited through hot melt rolling and blast rolling.
5. aluminum bronze Cu+ composite base rare earth thick film circuit Intelligent electric-heating chip according to claim 4, it is characterized in that, described rare earth thick-film resistor circuit, rare earth thick film control circuit, rare earth thick membrane electrode are connected circuit and rare earth thick film functional circuit is prepared on alumina-base material, and T2 bronze Cu+ is as load carrying face.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103716924A (en) * | 2013-12-26 | 2014-04-09 | 王克政 | Rare earth thick film circuit electric heating chip and manufacturing technology thereof |
| CN104320866A (en) * | 2014-09-19 | 2015-01-28 | 王晨 | Composite-material-based thick-film circuit rare earth electrode slurry and preparation process thereof |
| CN107396466A (en) * | 2017-07-03 | 2017-11-24 | 王克政 | Electric slurry and preparation method thereof, thick film circuit chip thermal source and preparation method thereof |
-
2013
- 2013-12-26 CN CN201320875517.6U patent/CN203632890U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103716924A (en) * | 2013-12-26 | 2014-04-09 | 王克政 | Rare earth thick film circuit electric heating chip and manufacturing technology thereof |
| CN104320866A (en) * | 2014-09-19 | 2015-01-28 | 王晨 | Composite-material-based thick-film circuit rare earth electrode slurry and preparation process thereof |
| CN107396466A (en) * | 2017-07-03 | 2017-11-24 | 王克政 | Electric slurry and preparation method thereof, thick film circuit chip thermal source and preparation method thereof |
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