CN203617685U - IGBT chip suitable for electromagnetic oven and corresponding control circuit - Google Patents

IGBT chip suitable for electromagnetic oven and corresponding control circuit Download PDF

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Publication number
CN203617685U
CN203617685U CN201320731228.9U CN201320731228U CN203617685U CN 203617685 U CN203617685 U CN 203617685U CN 201320731228 U CN201320731228 U CN 201320731228U CN 203617685 U CN203617685 U CN 203617685U
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China
Prior art keywords
igbt
circuit
igbt chip
chip
treatment circuit
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CN201320731228.9U
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Chinese (zh)
Inventor
朱泽春
胡文飞
乔中义
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Joyoung Co Ltd
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Joyoung Co Ltd
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Abstract

The utility model relates to an IGBT chip suitable for an electromagnetic oven and a corresponding control circuit. The internal part of the IGBT chip is internally provided with an IGBT (13), a first voltage detecting and processing circuit (14), a first current detecting and processing circuit (15), an IGBT drive processing circuit (16) and a temperature detecting and processing circuit (17). Under the premise of not adding an extra pin, the internal part of the IGBT chip is integrated with the first voltage detecting and processing circuit (14) and the like, and the chip inner overvoltage of the IGBT (13) is realized. Compared with the prior art, the protection is more timely, more reliable and more consistent, and so that the damage rate of the IGBT chip (11) is low.

Description

Be applicable to igbt chip and the corresponding control circuit of electromagnetic oven
Technical field
The utility model relates to electromagnetic oven field, relates in particular to a kind of dull and stereotyped electromagnetic oven.
Background technology
It is unanimously electromagnetic oven industry issue that IGBT booster damages; its main cause is that overcurrent, overvoltage, excess temperature cause; existing electromagnetic oven product adopts conventional IGBT; do not possess self-protection ability; the prevention method of product is by periphery and builds electric current, voltage detecting circuit; temperature-sensing element is installed on fin, is coordinated software, protection IGBT.
Summary of the invention
For addressing the above problem, the utility model provides a kind of igbt chip that is applicable to electromagnetic oven that carries defencive function.
For achieving the above object, the technical solution adopted in the utility model is: a kind of igbt chip that is applicable to electromagnetic oven, comprise IGBT, and it is characterized in that, also comprise that the IGBT being connected with described IGBT drives treatment circuit,
And the first voltage detecting and the treatment circuit that drive the collector electrode for the treatment of circuit and described IGBT to be connected with described IGBT, detect described collector voltage signal and be treated to the first voltage signal;
Described IGBT drives treatment circuit to compare rear drive or turn-off described IGBT according to the rated signal of described the first voltage signal and described IGBT.
The first preferred version of the present utility model is: also comprises and is located at the temperature detection and the treatment circuit that in described igbt chip and with described IGBT, drive treatment circuit to be connected, detect the interior temperature of described igbt chip and be treated to temperature signal,
Described IGBT drives treatment circuit to compare rear drive or turn-off described IGBT according to described temperature signal and described rated signal.Adopt this scheme, integrated temperature measuring ability, provide one more in time, more reliable temperature protection mode, extend useful life of igbt chip.
The second preferred version of the present utility model is: also comprises the first current detecting and the treatment circuit that drive the emitter for the treatment of circuit and described IGBT to be connected with described IGBT, detects described emitter current signal and be treated to the first current signal,
Described IGBT drives treatment circuit to compare rear drive or turn-off described IGBT according to institute's the first electric current and described rated signal.Adopt this scheme, the current signal measuring ability of integrated emitter, provide one more in time, more reliable overcurrent protection mode, extend IGBT useful life.
The 3rd preferred version of the present utility model is: described rated signal comprises at least one in rated voltage, rated temperature, rated current.Use this scheme, select concrete signal according to respective environment, the protected mode that a kind of accommodation is wider can be provided.
The 4th preferred version of the present utility model is: described IGBT drives treatment circuit to comprise at least one driving or turn-offs the triode of described IGBT.Adopt triode to carry out turn-off protection, reliability is high.
The 5th preferred version of the present utility model is: described temperature detection and treatment circuit comprise a thermo-sensitive resistor of being located in described igbt chip.Adopt thermo-sensitive resistor to carry out detected temperatures, be convenient to design, reliability is high.
The 6th preferred version of the present utility model is: a kind of controlling circuit of electromagnetic furnace, is characterized in that: comprise igbt chip described in the arbitrary claim of claim 1 to 7; Also comprise the drive circuit that is connected with described igbt chip and by the microcontroller of igbt chip described in described drive circuit control.Adopt this scheme, dispensed peripheral corresponding protective circuit.Make the circuit structure of electromagnetic oven can design more simply.
The 7th preferred version of the present utility model is: also comprise coil panel and synchronous circuit, described microcontroller is connected with described igbt chip by synchronous circuit, and described coil panel is electrically connected with described igbt chip.
Technical advantage of the present utility model is: do not increasing under the prerequisite of additional pin, inside is integrated into the first voltage detecting and treatment circuit, can realize overvoltage protection in chip to IGBT.Than prior art, protect more in time, more reliably, more consistent, make the spoilage step-down of igbt chip.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the utility model embodiment, below the accompanying drawing of required use during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skills, do not paying under the prerequisite of creative work, also can obtain according to following accompanying drawing other accompanying drawing.
Fig. 1 is the igbt chip structural representation of embodiment 1.
Fig. 2 is the igbt chip internal circuit diagram of embodiment 1.
Fig. 3 is the controlling circuit of electromagnetic furnace module map of embodiment 2.
Reference numeral: 11-IGBT chip, 12-wafer district, 13-IGBT, 14-the first voltage detecting and treatment circuit, 15-the first current detecting and treatment circuit, 16-IGBT drives treatment circuit, 17-temperature detection and treatment circuit, 31-coil panel, 32-drive circuit, 33-synchronous circuit, 34-microcontroller, 35-system power testing circuit, 36-ac voltage detection circuit, 37-temperature sensor, 38-fan.
Embodiment
Below in conjunction with specific embodiments and the drawings, the utility model is described further.
Embodiment 1.
With reference to figure 1, Fig. 2, a kind of igbt chip 11 that is applicable to electromagnetic oven, inside is provided with an IGBT13, the first voltage detecting and treatment circuit 14, the first current detecting and treatment circuit 15, IGBT drives treatment circuit 16 and temperature detection and treatment circuit 17; On the collector electrode C of IGBT13, be connected with the first voltage detecting and treatment circuit 14; The emitter E of IGBT13 is connected with the first voltage detecting and treatment circuit 15; Wherein, IGBT drives treatment circuit 16 to be connected with the first voltage detecting and treatment circuit 14, the first current detecting and treatment circuit 15, temperature detection and treatment circuit 17.
As Fig. 2, IGBT drives treatment circuit 16 to comprise described the first triode Q1, the second triode Q2, the 3rd triode Q3 and corresponding peripheral circuit; Temperature detection and treatment circuit 17 comprise thermo-sensitive resistor RT1; The first voltage detecting and treatment circuit 14 comprise that the 9th resistance R 9 of series connection and the tenth resistance R 10, the first current detecting and treatment circuit 15 are the common circuit based on Hall element, flow measurement resistance exclusive disjunction amplifier etc.
Above-mentioned each module is according to adding necessary components and parts shown in Fig. 2, and carries out circuit connection.In the time that the operating state of IGBT13 exceedes its rated temperature signal, rated current, rated voltage, to set by peripheral circuit, the base stage of above-mentioned the first triode Q1, the second triode Q2, the 3rd triode Q3 possesses the voltage of enough opening triode.
When normal operating conditions, the temperature signal that the first current signal, temperature detection and the treatment circuit 17 that the first voltage signal, the first current detecting and the treatment circuit 15 that the first voltage detecting and treatment circuit 14 send sends sends is neither opened the triode of IGBT driving treatment circuit 16.
In the time of abnormal operating state, in the time that the temperature of igbt chip 11 raises and exceed rated temperature signal, now the resistance of the thermo-sensitive resistor RT1 of temperature detection and treatment circuit 17 reduces, temperature detection and treatment circuit 17 send temperature signal, after the peripheral circuit of the first triode Q1 is compared, the base voltage of the first triode Q1 raises, and the first triode Q1 is open-minded, thereby drag down the grid G of IGBT13, IGBT13 is turn-offed.
In the time of abnormal operating state, in the time that the electric current of IGBT13 emitter E exceedes rated current, the first current detecting and treatment circuit 15 send the first current signal, and this first current signal is opened the second triode Q2, drag down the grid G of IGBT13, thereby IGBT13 is turn-offed.
In the time of abnormal operating state, in the time that the collector electrode C of IGBT13 voltage exceedes rated voltage, the 9th resistance R 9 and the tenth resistance R 10 of the first voltage detecting and treatment circuit 14 detect voltage, the voltage in two resistance centre positions place raises, open the 3rd triode Q3 by the first voltage signal, drag down the grid G of IGBT13, thereby IGBT13 is turn-offed.
Above-mentioned peripheral circuit setting, can, by mode shown in Fig. 2, also can set by the conventional setting means in this area.The first above-mentioned voltage detecting and treatment circuit 14, the first current detecting and treatment circuit 15, temperature detection and treatment circuit 17 are not all to adopt, and as the case may be, can consider to adopt the one or more modules in above-mentioned several module.
Embodiment 2.
With reference to 3, a kind of controlling circuit of electromagnetic furnace, comprises coil panel 31, igbt chip 11, drive circuit 32, synchronous circuit 33 and microcontroller 34.Microcontroller 34 is connected with igbt chip 11 by drive circuit 32 and synchronous circuit 33, igbt chip 11 drive coil dishes 31.
Course of work flow process is as follows: first microcontroller 34 sends one and start igbt chip 11 working pulses, and pulse is carried out amplifying signal electric current and voltage transitions by drive circuit 32.While opening, the collector electrode C voltage of igbt chip 11 is 0V, opens igbt chip 11 certain hours and turn-offs immediately, and coil panel 31 charges, igbt chip 11 Current rises.In the time that igbt chip turn-offs, the collector electrode C voltage of igbt chip 11 rises, while considering the optimum Working of igbt chip 11, its collector electrode C is 0 voltage, microcontroller 34 is flutterred by synchronous circuit the collector electrode C that grasps igbt chip and is crossed 0 voltage power supply point, again open in time igbt chip 11, guarantee that electromagnetic stove continues reliably working.
Further, microcontroller 32 also can connect system power testing circuit 35 conventional in electromagnetic oven, ac voltage detection circuit 36, temperature sensor 37, fan 38 etc., and controls above-mentioned module.Each circuit module in the present embodiment, includes, but are not limited to the module described in the present embodiment, and conventional circuit module in all electromagnetic ovens, is all included in the present embodiment.
The above; it is only the utility model embodiment; but protection range of the present utility model is not limited to this; any be familiar with those skilled in the art the utility model disclose technical scope in; the variation that can expect easily or replacement, within all should being encompassed in protection range of the present utility model.Therefore, protection range of the present utility model should be as the criterion with the protection range of claim.

Claims (8)

1. an igbt chip that is applicable to electromagnetic oven, comprises IGBT, it is characterized in that, also comprises that the IGBT being connected with described IGBT drives treatment circuit,
And the first voltage detecting and the treatment circuit that drive the collector electrode for the treatment of circuit and described IGBT to be connected with described IGBT, detect described collector voltage signal and be treated to the first voltage signal;
Described IGBT drives treatment circuit to compare rear drive or turn-off described IGBT according to the rated signal of described the first voltage signal and described IGBT.
2. be applicable to according to claim 1 the igbt chip of electromagnetic oven, it is characterized in that: also comprise and be located at the temperature detection and the treatment circuit that in described igbt chip and with described IGBT, drive treatment circuit to be connected, detect the interior temperature of described igbt chip and be treated to temperature signal
Described IGBT drives treatment circuit to compare rear drive or turn-off described IGBT according to described temperature signal and described rated signal.
3. be applicable to according to claim 1 the igbt chip of electromagnetic oven, it is characterized in that: also comprise the first current detecting and the treatment circuit that drive the emitter for the treatment of circuit and described IGBT to be connected with described IGBT, detect described emitter current signal and be treated to the first current signal
Described IGBT drives treatment circuit to compare rear drive or turn-off described IGBT according to described the first current signal and described rated signal.
4. according to the igbt chip that is applicable to electromagnetic oven described in claim 1 or 2 or 3, it is characterized in that: described rated signal comprises at least one in rated voltage, rated temperature, rated current.
5. according to the igbt chip that is applicable to electromagnetic oven described in claim 1 or 2 or 3, it is characterized in that: described IGBT drives treatment circuit to comprise at least one driving or turn-offs the triode of described IGBT.
6. the igbt chip that is applicable to according to claim 2 electromagnetic oven, is characterized in that: described temperature detection and treatment circuit comprise a thermo-sensitive resistor of being located in described igbt chip.
7. a controlling circuit of electromagnetic furnace, is characterized in that: comprise igbt chip described in the arbitrary claim of claim 1 to 6; Also comprise the drive circuit that is connected with described igbt chip and by the microcontroller of igbt chip described in described drive circuit control.
8. controlling circuit of electromagnetic furnace according to claim 7, is characterized in that: also comprise coil panel and synchronous circuit, described microcontroller is connected with described igbt chip by synchronous circuit, and described coil panel is electrically connected with described igbt chip.
CN201320731228.9U 2013-11-19 2013-11-19 IGBT chip suitable for electromagnetic oven and corresponding control circuit Expired - Lifetime CN203617685U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201320731228.9U CN203617685U (en) 2013-11-19 2013-11-19 IGBT chip suitable for electromagnetic oven and corresponding control circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201320731228.9U CN203617685U (en) 2013-11-19 2013-11-19 IGBT chip suitable for electromagnetic oven and corresponding control circuit

Publications (1)

Publication Number Publication Date
CN203617685U true CN203617685U (en) 2014-05-28

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105628246A (en) * 2015-12-20 2016-06-01 常州瑞华电力电子器件有限公司 Power semiconductor module temperature monitoring system
CN107817403A (en) * 2017-10-31 2018-03-20 惠州鼎宝金属制品有限公司 A kind of fault detection system for oven

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105628246A (en) * 2015-12-20 2016-06-01 常州瑞华电力电子器件有限公司 Power semiconductor module temperature monitoring system
CN107817403A (en) * 2017-10-31 2018-03-20 惠州鼎宝金属制品有限公司 A kind of fault detection system for oven

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C14 Grant of patent or utility model
GR01 Patent grant
CP02 Change in the address of a patent holder

Address after: Huaiyin District of Ji'nan City, Shandong Province, 250117 US 999 miles

Patentee after: JOYOUNG Co.,Ltd.

Address before: Xinsha Road, Huaiyin District of Ji'nan city of Shandong Province, No. 12 250118

Patentee before: JOYOUNG Co.,Ltd.

CX01 Expiry of patent term

Granted publication date: 20140528

CX01 Expiry of patent term