CN203607400U - 显指可调双晶大功率led - Google Patents

显指可调双晶大功率led Download PDF

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Publication number
CN203607400U
CN203607400U CN201320696168.1U CN201320696168U CN203607400U CN 203607400 U CN203607400 U CN 203607400U CN 201320696168 U CN201320696168 U CN 201320696168U CN 203607400 U CN203607400 U CN 203607400U
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wafer
blue light
auxiliary
cri
support
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Expired - Fee Related
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CN201320696168.1U
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Inventor
李登延
王新
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Shandong Kougin Lighting Technology Co ltd
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SHANDONG MINGHUA PHOTOELECTRIC TECHNOLOGY CO LTD
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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Abstract

显指可调双晶大功率LED，主要由支架、晶片和金线组成，晶片包括蓝光晶片和辅助晶片，蓝光晶片和辅助晶片通过银胶固定于支架的铜柱上，铜柱和晶片表面覆盖荧光胶，蓝光晶片和辅助晶片分别通过金线与其对应正极引脚和负极引脚连接，蓝光晶片和辅助晶片的控制电路通过PPA绝缘层隔开。本实用新型解决了传统牺牲亮度来实现高显的方案，通过采用双电路控制实现显指调节，本专利根据高显LED中不同波长所占比例选取合适的红光(或绿光)晶片与蓝光晶片共同固定于支架表面，通过双电路控制，实现显指调节，且因红光(或绿光)晶片本身自有亮度，实现高显的同时，提升了亮度。

Description

显指可调双晶大功率LED
技术领域
本发明涉及照明灯具技术领域，具体涉及一种显指可调双晶大功率LED。
背景技术
目前大功率LED主要由支架、晶片、金线、荧光粉(白光才有的)和AB胶组成。目前行业内多采用黄色荧光粉中混合红粉、绿粉，通过高波段蓝光晶片激发，来实现高显目的。虽然现有做法可通过调整红绿黄荧光粉实现高显方案，但是混合后荧光粉的激发效率降低，亮度减小较明显，对大功率LED的发光效果带来了比较大的影响。
发明内容
本发明提供了一种显指可调双晶大功率LED，以解决现有技术存在的激发效率低和亮度减小的问题。
本发明主要由支架、晶片和金线组成，解决其技术问题所采用的技术方案是晶片包括蓝光晶片和辅助晶片，蓝光晶片和辅助晶片通过银胶固定于支架的铜柱上，铜柱和晶片表面覆盖荧光胶，蓝光晶片和辅助晶片分别通过金线与其对应正极引脚和负极引脚连接，蓝光晶片和辅助晶片的控制电路通过PPA绝缘层隔开。
上述辅助晶片为红光晶片或绿光晶片。
与现有技术相比，本发明解决了传统牺牲亮度来实现高显的方案，通过采用双电路控制实现显指调节，本专利根据高显LED中不同波长所占比例选取合适的红光(或绿光)晶片与蓝光晶片共同固定于支架表面，通过双电路控制，实现显指调节，且因红光(或绿光)晶片本身自有亮度，实现高显的同时，提升了亮度。
附图说明
下面结合附图和实施例对本发明进一步说明。
图1是本发明的结构示意图。
图中1蓝光晶片、2辅助晶片、3铜柱、4荧光胶、5金线、6正极引脚、7负极引脚、8PPA绝缘层。
具体实施方式
如图所示，一种显指可调双晶大功率LED，主要由支架、晶片和金线组成，晶片包括蓝光晶片1和辅助晶片2，辅助晶片2为红光晶片或绿光晶片，支架为双晶支架，蓝光晶片1、辅助晶片2通过银胶固定于铜柱3上，铜柱3、蓝光晶片1和辅助晶片2表面覆盖黄色的荧光胶4，蓝光晶片1通过金线5与其对应的正极引脚6和负极引脚7连接，辅助晶片2通过金线5与其对应的正极引脚6和负极引脚7连接，蓝光晶片和辅助晶片的控制电路通过PPA绝缘层8隔开，不相导通。当需要正常显指白光时，将蓝光晶片对应的正极引脚6和负极引脚7导通，当有高显指需求时，再将辅助晶片2对应的正极引脚6和负极引脚7导通，便可实现高显方案，且亮度不降反升。

Claims (2)

1.一种显指可调双晶大功率LED，主要由支架、晶片和金线组成，其特征是晶片包括蓝光晶片和辅助晶片，蓝光晶片和辅助晶片通过银胶固定于支架的铜柱上，铜柱和晶片表面覆盖荧光胶，蓝光晶片和辅助晶片分别通过金线与其对应正极引脚和负极引脚连接，蓝光晶片和辅助晶片的控制电路通过PPA绝缘层隔开。
2.根据权利要求1所述的显指可调双晶大功率LED，其特征是辅助晶片为红光晶片或绿光晶片。
CN201320696168.1U 2013-10-30 2013-10-30 显指可调双晶大功率led Expired - Fee Related CN203607400U (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103560129A (zh) * 2013-10-30 2014-02-05 山东明华光电科技有限公司 显指可调双晶大功率led

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103560129A (zh) * 2013-10-30 2014-02-05 山东明华光电科技有限公司 显指可调双晶大功率led

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Owner name: SHANDONG GUANGYIN LIGHTING TECHNOLOGY CO., LTD.

Free format text: FORMER NAME: SHANDONG MING HUA PHOTOELECTRIC TECHNOLOGY CO., LTD.

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Address after: 253000, Shandong, Lingxian County province Dezhou Economic Development Zone Xingguo street, South First

Patentee after: SHANDONG KOUGIN LIGHTING TECHNOLOGY CO.,LTD.

Address before: 253500, Shandong, Lingxian County province Dezhou Economic Development Zone Xingguo street, South First

Patentee before: Shandong Minghua Photoelectric Technology Co.,Ltd.

PE01 Entry into force of the registration of the contract for pledge of patent right

Denomination of utility model: Double-wafer high-power LED with adjustable color rendering index

Effective date of registration: 20161202

Granted publication date: 20140521

Pledgee: The Bank of Dezhou Limited by Share Ltd. Lingcheng District Branch

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Registration number: 2016990001046

PC01 Cancellation of the registration of the contract for pledge of patent right
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Denomination of utility model: Double-wafer high-power LED with adjustable color rendering index

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Pledgee: The Bank of Dezhou Limited by Share Ltd. Lingcheng District Branch

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