CN203602750U - 一种用于扩宽区熔单晶炉内线圈缝的工具 - Google Patents
一种用于扩宽区熔单晶炉内线圈缝的工具 Download PDFInfo
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- CN203602750U CN203602750U CN201320782686.5U CN201320782686U CN203602750U CN 203602750 U CN203602750 U CN 203602750U CN 201320782686 U CN201320782686 U CN 201320782686U CN 203602750 U CN203602750 U CN 203602750U
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- 239000013078 crystal Substances 0.000 title claims abstract description 16
- 238000004857 zone melting Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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CN201320782686.5U CN203602750U (zh) | 2013-12-02 | 2013-12-02 | 一种用于扩宽区熔单晶炉内线圈缝的工具 |
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CN201320782686.5U CN203602750U (zh) | 2013-12-02 | 2013-12-02 | 一种用于扩宽区熔单晶炉内线圈缝的工具 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108425146A (zh) * | 2018-04-13 | 2018-08-21 | 天津中环领先材料技术有限公司 | 一种降低区熔感应线圈形变的方法及抗形变线圈 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108425146A (zh) * | 2018-04-13 | 2018-08-21 | 天津中环领先材料技术有限公司 | 一种降低区熔感应线圈形变的方法及抗形变线圈 |
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Owner name: GRINM ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: GRINM SEMICONDUCTOR MATERIALS CO., LTD. |
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Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: GRINM ADVANCED MATERIALS CO.,LTD. Patentee after: Guotai Semiconductor Material Co.,Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. Patentee before: Guotai Semiconductor Material Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder |
Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: GRINM ADVANCED MATERIALS CO.,LTD. Patentee after: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM ADVANCED MATERIALS CO.,LTD. Patentee before: Guotai Semiconductor Material Co.,Ltd. |
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Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150708 Free format text: FORMER OWNER: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Effective date: 20150708 |
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Address after: 100088, 2, Xinjie street, Xicheng District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 100088, 2, Xinjie street, Xicheng District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 100088, 2, Xinjie street, Xicheng District, Beijing Patentee before: Youyan semiconductor silicon materials Co.,Ltd. |
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