CN203562640U - Uniform side surface pump structure of circular ring semiconductor laser - Google Patents
Uniform side surface pump structure of circular ring semiconductor laser Download PDFInfo
- Publication number
- CN203562640U CN203562640U CN201320713699.7U CN201320713699U CN203562640U CN 203562640 U CN203562640 U CN 203562640U CN 201320713699 U CN201320713699 U CN 201320713699U CN 203562640 U CN203562640 U CN 203562640U
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- Prior art keywords
- semiconductor laser
- annulus
- circular ring
- ring semiconductor
- lateral face
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 142
- 238000005086 pumping Methods 0.000 claims description 37
- 239000013049 sediment Substances 0.000 claims description 26
- 238000001816 cooling Methods 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims description 7
- 238000000605 extraction Methods 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000003708 ampul Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000035617 depilation Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000010147 laser engraving Methods 0.000 description 1
- 238000010330 laser marking Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The utility model discloses a uniform side surface pump structure of a circular ring semiconductor laser. The structure comprises one or more circular ring semiconductor laser devices. Each circular ring semiconductor laser device comprises a circular ring semiconductor laser heat sink, a circular ring semiconductor laser and a YAG, wherein the circular ring semiconductor laser heat sink possesses an electrode lead outlet; the circular ring semiconductor laser is arranged on an inner ring of the circular ring semiconductor laser heat sink; the YAG is arranged in the circular ring semiconductor laser; the circular ring semiconductor laser possesses two electrodes; the two electrodes pass through the electrode lead outlet of the circular ring semiconductor laser heat sink and are exposed. According to the structure of the utility model, through the design of the single circular ring semiconductor laser heat sink, packaging of the semiconductor laser is simple and the structure is independent, and power up working of the semiconductor laser can be performed independently; rotation, superposition and assembling of the plurality of devices can make up pump absence brought by electrode extraction in the single device; emitting laser mode quality of a final solid-state laser is increased.
Description
Technical field
The utility model patent belongs to high power laser technical field, refers more particularly to a kind of uniform lateral face pumping structure of annulus semiconductor laser.
Background technology
Yttrium-aluminium-garnet (YAG) the crystal bar module (hereinafter to be referred as module) of certain element doping of semiconductor laser side face pumping is a kind of solid state laser, its operation principle is exactly that near the laser (general wavelength is 808nm) that semiconductor laser is sent is shining into YAG crystal bar, make its absorption, the inner energy level transition that occurs, finally excites YAG crystal bar to send the concentrated infrared laser of another kind of light beam (general wavelength 1064nm-1550nm scope).
Semiconductor laser is rapid to the pump technology development of YAG crystal bar in recent years, and constantly improves ripe.Its application is very extensive, as industrial processes fields such as laser marking, laser engraving, laser cutting, laser welding; Also have laser scalpel in medical field, laser depilation etc.; In military field, also obtain many-sided application, as laser radar, laser fuze, laser ranging etc.
In general, the pumping source of module---semiconductor laser (LD) has two kinds of mode of operations: pulse and continuous.This patent relates generally to the mode of operation of pulse, the sharp LD peak power of penetrating of pulse is high, average heat production is low, can carry out intensive stacked package (spacing can reach 0.4mm), thereby realize the output of high-peak power Solid State Laser, this class requires high with the solid state laser of impulse semiconductor laser pumping to final laser emitting pattern, generally all require to reach 0 rank or 1 rank mould, this must have very high uniformity with regard to the pumping configuration in decision module, in prior art, as shown in Figure 1, generally take two semi arch device 1 make-ups to install to realize profile pump relatively uniformly, this method is simple in structure, encapsulation is convenient, but there is a fatal defect, the positive and negative electrode that is exactly semiconductor laser 1 occupies one section of circular arc space, this section of circular arc do not have Semiconductor Laser Irradiation to enter the YAG of circle centre position, cause YAG corresponding position to absorb without semiconductor laser, the last laser facula that swashs ejaculation from YAG two ends is spindle, form higher order mode, unfavorable application.Also there is a defect in prior art in addition: to the pumping of many groups circular arc, can only arrange in advance, once semicircle semiconductor laser thermal sediment machines, several groups of circular arc pumping configurations just can not be changed, in middle certain group circular arc, there is the semiconductor laser of damage to be also inconvenient to keep in repair and change, this makes troubles to final application, and flexibility is not enough.In the utility model, take a kind of pumping configuration of full circle ring, well solved the series of problems existing in prior art.
The defect of annulus semiconductor laser device of the prior art is: the pumping of annulus semiconductor laser device overlaying structure improves pumping homogeneity greatly, makes final zlasing mode reach 0 rank or 1 rank mould, and shoot laser hot spot is circular; Every group of full circle arc is independent structure heat-sink, can need any amount stack, applying flexible according to YAG length and user.
Utility model content
For the problem in correlation technique, the utility model proposes a kind of uniform lateral face pumping structure of annulus semiconductor laser, can make pumping even, improve the shoot laser mode quality of final solid state laser.
The technical solution of the utility model is achieved in that
The utility model provides a kind of uniform lateral face pumping structure of annulus semiconductor laser, the uniform lateral face pumping structure of this annulus semiconductor laser comprises one or more annulus semiconductor laser devices, wherein, described in each, annulus semiconductor laser device comprises: annulus semiconductor laser thermal sediment, described annulus semiconductor laser thermal sediment has electrode outlet, be arranged on the annulus semiconductor laser of ring in annulus semiconductor laser thermal sediment, and be located in the YAG in described annulus semiconductor laser, described annulus semiconductor laser has two electrodes, described two electrodes expose through the electrode outlet of described semiconductor laser thermal sediment.
Preferably, between described annulus semiconductor laser thermal sediment and described annulus semiconductor laser, be provided with a plurality of cooling pipes.
Preferably, between described cooling pipe and described annulus semiconductor laser thermal sediment and described cooling pipe and described annulus semiconductor laser, be respectively arranged with sealing ring.
Preferably, the device of described annulus semiconductor laser device is a plurality of, described a plurality of annulus semiconductor laser device arranged in co-axial alignment, and be provided with clamped ring between adjacent annulus semiconductor laser device.
Preferably, described in each, annulus semiconductor laser device has a plurality ofly for wearing the through hole of fixed axis, and described a plurality of annulus semiconductor laser devices connect by fixed axis.
Preferably, according to the orientation of a plurality of annulus semiconductor laser device, described electrode rotates set angle successively.
Preferably, the angle of described setting be 360 ° with described annulus semiconductor laser device in the number of degrees that are divided by and obtain for wearing the through hole number of fixed axis.
The utility model makes semiconductor laser encapsulation simple by the design of single annulus semiconductor laser thermal sediment, and structure is independent, can independently carry out the work that powers up of semiconductor laser; The rotation stack assembling of a plurality of devices can make up in individual devices that to draw the pumping configuration bringing vacant due to electrode, makes pumping configuration even, improves the shoot laser mode quality of final solid state laser; Clamped ring design on annulus semiconductor laser thermal sediment makes the assembling between a plurality of devices simple, and good concentricity can select the device of suitable quantity to superpose according to user's needs, makes application more flexible.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to the accompanying drawing of required use in embodiment be briefly described below, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the uniform lateral face pumping structure of semicircle semiconductor laser of the prior art;
Fig. 2 is the stereogram of the annulus semiconductor laser device that provides of the utility model embodiment;
Fig. 3 is the structural representation that the utility model embodiment provides annulus semiconductor laser device;
Fig. 4 is the uniform lateral face pumping structure of the annulus semiconductor laser that provides of the utility model embodiment;
Fig. 5 is the uniform lateral face pumping structure of the chlamydate annulus semiconductor laser of tool that provides of the utility model embodiment.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, rather than whole embodiment.Embodiment based in the utility model, the every other embodiment that those of ordinary skills obtain, belongs to the scope that the utility model is protected.
As shown in Figure 2 and Figure 4, according to embodiment of the present utility model, a kind of uniform lateral face pumping structure of annulus semiconductor laser is provided, the uniform lateral face pumping structure of this annulus semiconductor laser 2 comprises one or more annulus semiconductor laser devices 8, wherein, as shown in Figures 2 and 3, each annulus semiconductor laser device comprises: annulus semiconductor laser thermal sediment 6, annulus semiconductor laser thermal sediment 6 has electrode outlet, be arranged on the annulus semiconductor laser 2 of annulus semiconductor laser thermal sediment 6 interior rings, and be located in the YAG7 in annulus semiconductor laser 2, annulus semiconductor laser 2 has two electrodes 5, two electrodes 5 expose through the electrode outlet of semiconductor laser thermal sediment 6.
In addition, between annulus semiconductor laser thermal sediment 6 and annulus semiconductor laser 2, be provided with a plurality of cooling pipes 3.The plurality of cooling pipe 3 arranges around described annulus semiconductor laser 2, in use, by 3 pairs of annulus semiconductor lasers 2 of cooling pipe, cools.
For fear of cooling pipe 3, leak annulus semiconductor laser 2 is impacted, preferably, between cooling pipe 3 and annulus semiconductor laser thermal sediment 6 and cooling pipe 3 and annulus semiconductor laser 2, be respectively arranged with sealing ring 4.Improve the sealing of cooling pipe 3, improved the fail safe of annulus semiconductor laser 2 simultaneously.
As shown in Figure 4, when using the device of a plurality of annulus semiconductor laser device annulus semiconductor laser devices 8, a plurality of annulus semiconductor laser device annulus semiconductor laser device 8 arranged in co-axial alignment, and be provided with clamped ring between adjacent annulus semiconductor laser device annulus semiconductor laser device 8.By clamped ring, facilitate adjacent annulus semiconductor laser device annulus semiconductor laser device 8 to connect, simultaneously, each annulus semiconductor laser device 8 has a plurality of for wearing the through hole of fixed axis, and a plurality of annulus semiconductor laser device annulus semiconductor laser devices 8 connect by fixed axis.When mounted, according to 8 orientations of a plurality of annulus semiconductor laser device annulus semiconductor laser device, electrode 5 rotates set angle successively.The angle of this setting be 360 ° with annulus semiconductor laser device 8 described in annulus semiconductor in the number of degrees that are divided by and obtain for wearing the through hole of fixed axis.The rotation stack assembling of a plurality of devices can make up in individual devices that to draw the pumping configuration bringing vacant due to electrode 5, makes pumping configuration even, improves the shoot laser mode quality of final solid state laser; The clamped ring design that annulus semiconductor laser 2 is heat sink on 6 makes the assembling between a plurality of devices simple, and good concentricity can select the device of suitable quantity to superpose according to user's needs, makes application more flexible.
As shown in Figure 5, the fail safe of using in order to improve the uniform lateral face pumping structure of annulus semiconductor laser 2, a plurality of annulus semiconductor laser devices 8 are arranged in shell 9, and when annulus semiconductor laser device 8 has cooling water pipe, this shell 9 comprises that upper cover, base plate, shell 9 have the water inlet 10 being communicated with cooling pipe 3.By water inlet 10, be connected with cooling pipe 3, when many reduction semiconductor laser device work, cool.
The utility model makes semiconductor laser encapsulation simple by the design of single annulus semiconductor laser thermal sediment 6, and structure is independent, can independently carry out the work that powers up of semiconductor laser; The rotation stack assembling of a plurality of devices can make up in individual devices that to draw the pumping bringing vacant due to electrode 5, makes pumping even, improves the shoot laser mode quality of final solid state laser; Clamped ring design on annulus semiconductor laser thermal sediment 6 makes the assembling between a plurality of devices simple, and good concentricity can select the device of suitable quantity to superpose according to user's needs, makes application more flexible.
Take that to select 7 annulus semiconductor laser devices 8 be example below, the structure of the utility model embodiment is further described.
By YAG7, the intensive side, middle circle hole that is encapsulated in annulus semiconductor laser thermal sediment 6 of semiconductor laser, positive and negative electrode 5 is drawn by electrode outlet, forms annulus semiconductor laser 2 devices;
Device two sides in 7 stacks coordinates overhead gage, and the fixing hole with stock screw through 7 stack devices, is fixed;
By suitable quartz ampoule through the center of 7 devices, in the baffle plate on both sides, with water cover by quartz ampoule fixing seal;
In the outside of baffle plate, install two lining lids, by annulus semiconductor laser 2 through lining lid, baffle plate, 7 devices, with the gland sealing that is fixed;
The positive and negative electrode of 7 devices 5 is connected mutually, then install capping, base plate, 10, one complete semiconductor side pumping module products of water inlet and be successful.
In the utility model, the design of single annulus semiconductor laser thermal sediment 6 makes semiconductor laser encapsulation simple, and structure is independent, can independently carry out the work that powers up of semiconductor laser;
The rotation stack assembling of a plurality of devices can make up in individual devices that to draw the pumping bringing vacant due to electrode 5, makes pumping even, improves the shoot laser mode quality of final solid state laser;
Clamped ring design on annulus semiconductor laser thermal sediment 6 makes the assembling between a plurality of devices simple, and good concentricity can select the device of suitable quantity to superpose according to user's needs, makes application more flexible.
These are only preferred embodiment of the present utility model, not in order to limit the utility model, all within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (7)
1. the uniform lateral face pumping structure of an annulus semiconductor laser, it is characterized in that, comprise one or more annulus semiconductor laser devices, wherein, described in each, annulus semiconductor laser device comprises: annulus semiconductor laser thermal sediment, described annulus semiconductor laser thermal sediment has electrode outlet, be arranged on the annulus semiconductor laser of ring in annulus semiconductor laser thermal sediment, and be located in the YAG in described annulus semiconductor laser, described annulus semiconductor laser has two electrodes, described two electrodes expose through the electrode outlet of described semiconductor laser thermal sediment.
2. the uniform lateral face pumping structure of annulus semiconductor laser according to claim 1, is characterized in that, between described annulus semiconductor laser thermal sediment and described annulus semiconductor laser, is provided with a plurality of cooling pipes.
3. the uniform lateral face pumping structure of annulus semiconductor laser according to claim 2, it is characterized in that, between described cooling pipe and described annulus semiconductor laser thermal sediment and described cooling pipe and described annulus semiconductor laser, be respectively arranged with sealing ring.
4. according to the uniform lateral face pumping structure of the annulus semiconductor laser described in claim 1-3 any one, it is characterized in that, described annulus semiconductor laser device is a plurality of, described a plurality of annulus semiconductor laser device arranged in co-axial alignment, and be provided with clamped ring between adjacent annulus semiconductor laser device.
5. the uniform lateral face pumping structure of annulus semiconductor laser according to claim 4, it is characterized in that, described in each, annulus semiconductor laser device has a plurality ofly for wearing the through hole of fixed axis, and described a plurality of annulus semiconductor laser devices connect by fixed axis.
6. the uniform lateral face pumping structure of annulus semiconductor laser according to claim 4, is characterized in that, according to the orientation of a plurality of annulus semiconductor laser device, described electrode rotates set angle successively.
7. the uniform lateral face pumping structure of annulus semiconductor laser according to claim 6, is characterized in that, the angle of described setting be 360 ° with described annulus semiconductor laser device in the number of degrees that are divided by and obtain for wearing the through hole number of fixed axis.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320713699.7U CN203562640U (en) | 2013-11-14 | 2013-11-14 | Uniform side surface pump structure of circular ring semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320713699.7U CN203562640U (en) | 2013-11-14 | 2013-11-14 | Uniform side surface pump structure of circular ring semiconductor laser |
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| CN203562640U true CN203562640U (en) | 2014-04-23 |
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| CN201320713699.7U Expired - Lifetime CN203562640U (en) | 2013-11-14 | 2013-11-14 | Uniform side surface pump structure of circular ring semiconductor laser |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105215555A (en) * | 2015-10-26 | 2016-01-06 | 惠州市杰普特电子技术有限公司 | Laser mark printing device |
| CN105223563A (en) * | 2015-10-26 | 2016-01-06 | 惠州市杰普特电子技术有限公司 | Laser ranging system |
| CN105552695A (en) * | 2015-12-21 | 2016-05-04 | 中国科学院长春光学精密机械与物理研究所 | Optical element water-cooling apparatus used in vacuum environment |
| CN105576489A (en) * | 2016-02-22 | 2016-05-11 | 西安炬光科技股份有限公司 | Novel modularized semiconductor laser side-pump module |
| CN110224293A (en) * | 2019-05-23 | 2019-09-10 | 杨伟锋 | A kind of pumping source Semiconductor Laser disposably encapsulated |
| CN114784600A (en) * | 2022-03-04 | 2022-07-22 | 中国电子科技集团公司第十一研究所 | Solid laser of space ladder uniform pumping |
| CN116799611A (en) * | 2023-08-28 | 2023-09-22 | 北京凯普林光电科技股份有限公司 | Side pump module and semiconductor laser |
-
2013
- 2013-11-14 CN CN201320713699.7U patent/CN203562640U/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105215555A (en) * | 2015-10-26 | 2016-01-06 | 惠州市杰普特电子技术有限公司 | Laser mark printing device |
| CN105223563A (en) * | 2015-10-26 | 2016-01-06 | 惠州市杰普特电子技术有限公司 | Laser ranging system |
| CN105223563B (en) * | 2015-10-26 | 2019-06-04 | 惠州市杰普特电子技术有限公司 | Laser ranging system |
| CN105552695A (en) * | 2015-12-21 | 2016-05-04 | 中国科学院长春光学精密机械与物理研究所 | Optical element water-cooling apparatus used in vacuum environment |
| CN105552695B (en) * | 2015-12-21 | 2018-12-07 | 中国科学院长春光学精密机械与物理研究所 | A kind of optical element water cooling plant under vacuum environment |
| CN105576489A (en) * | 2016-02-22 | 2016-05-11 | 西安炬光科技股份有限公司 | Novel modularized semiconductor laser side-pump module |
| CN110224293A (en) * | 2019-05-23 | 2019-09-10 | 杨伟锋 | A kind of pumping source Semiconductor Laser disposably encapsulated |
| CN114784600A (en) * | 2022-03-04 | 2022-07-22 | 中国电子科技集团公司第十一研究所 | Solid laser of space ladder uniform pumping |
| CN114784600B (en) * | 2022-03-04 | 2024-03-19 | 中国电子科技集团公司第十一研究所 | Solid laser with space ladder uniform pumping |
| CN116799611A (en) * | 2023-08-28 | 2023-09-22 | 北京凯普林光电科技股份有限公司 | Side pump module and semiconductor laser |
| CN116799611B (en) * | 2023-08-28 | 2023-11-14 | 北京凯普林光电科技股份有限公司 | Side pump module and semiconductor laser |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140423 |
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| CX01 | Expiry of patent term |